CN112688151A - 266nm deep ultraviolet solid laser - Google Patents
266nm deep ultraviolet solid laser Download PDFInfo
- Publication number
- CN112688151A CN112688151A CN202011571371.7A CN202011571371A CN112688151A CN 112688151 A CN112688151 A CN 112688151A CN 202011571371 A CN202011571371 A CN 202011571371A CN 112688151 A CN112688151 A CN 112688151A
- Authority
- CN
- China
- Prior art keywords
- laser
- crystal
- plano
- light
- deep ultraviolet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007787 solid Substances 0.000 title claims abstract description 17
- 239000013078 crystal Substances 0.000 claims abstract description 74
- 238000001816 cooling Methods 0.000 claims abstract description 9
- 230000003287 optical effect Effects 0.000 claims abstract description 9
- 230000005855 radiation Effects 0.000 claims abstract description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000006185 dispersion Substances 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims description 10
- 229910009372 YVO4 Inorganic materials 0.000 claims description 9
- 230000008878 coupling Effects 0.000 claims description 9
- 238000010168 coupling process Methods 0.000 claims description 9
- 238000005859 coupling reaction Methods 0.000 claims description 9
- 230000010355 oscillation Effects 0.000 claims description 6
- 238000002834 transmittance Methods 0.000 claims description 5
- 230000000694 effects Effects 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 230000002269 spontaneous effect Effects 0.000 claims description 3
- 238000012544 monitoring process Methods 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 239000000463 material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 235000013405 beer Nutrition 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Images
Landscapes
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses a 266nm deep ultraviolet solid laser, which comprises a laser power supply for providing stimulated radiation of a laser crystal, a water cooling system for dissipating heat of the laser, a 1064nm resonant cavity, an in-cavity frequency doubling light path and an out-cavity frequency quadruple light path, wherein the 1064nm resonant cavity comprises a first plano-convex lens, a second plano-convex lens, a plano-convex mirror, the laser crystal, an acousto-optic modulator and a first reflector; the intracavity frequency doubling light path comprises an LBO frequency doubling crystal and a 532nm spectroscope; the out-of-cavity quadruplex optical path comprises a second transmitting mirror, a CLBO quadruplex crystal and a Brewster isosceles prism; the 266nm deep ultraviolet solid laser of the invention separates the 532nm laser of the frequency multiplication in the resonant cavity; separating 266nm laser generated after quadruple frequency and residual 532nm laser by using a dispersion principle, and outputting the 266nm laser to a light outlet; the optical mode is better, and the light-light conversion efficiency reaches 80 percent.
Description
Technical Field
The invention belongs to the field of automatic control of solid lasers, and particularly relates to a 266nm deep ultraviolet laser based on 532nm extra-cavity quadruple frequency.
Background
The absorption properties of materials (beer's law) are exploited when using lasers for material processing; generally, the more energy a material absorbs, the better the processing results; in addition, the processing process is clean and accurate, the heat affected zone is small, the key is that the laser on the material has the power density of the peak value, simultaneously, the pulse energy is large, the pulse width is short, the light spot is small, and the energy is absorbed by one hundred percent; because of the shorter wavelength, the 266nm laser can obtain smaller spot and shorter pulse width than the 355nm laser under the same optical system condition; this can be done with 355nm laser as well as with 266nm laser, and the latter is generally more effective, and many processes that cannot be done with 355nm laser can be done with 266nm laser.
Disclosure of Invention
Therefore, in order to solve the above-mentioned disadvantages, the present invention provides a 266nm deep ultraviolet solid-state laser and a device thereof; the 266nm deep ultraviolet solid laser separates the frequency-doubled 532nm laser in the resonant cavity; separating 266nm laser generated after quadruple frequency and residual 532nm laser by using a dispersion principle, and outputting the 266nm laser to a light outlet; the optical mode is better, and the light-light conversion efficiency reaches 80 percent.
The invention discloses a 266nm deep ultraviolet solid laser, which is characterized in that: the device comprises a laser power supply for providing laser crystal stimulated radiation, a water cooling system for cooling a laser, a 1064nm resonant cavity, an in-cavity frequency doubling light path and an out-cavity frequency quadruple light path, wherein the 1064nm resonant cavity comprises a first plano-convex lens, a second plano-convex lens, a plano-convex mirror, a laser crystal, an acousto-optic modulator and a first reflector;
the intracavity frequency doubling light path comprises an LBO frequency doubling crystal and a 532nm spectroscope;
the out-of-cavity quadruplex optical path comprises a second reflecting mirror, a CLBO quadruplex crystal and a Brewster isosceles prism;
the convex surfaces of the first plano-convex lens and the second plano-convex lens are opposite to form a coupling system;
the pump light incident to the coupling system is coupled by the coupling system and then focused on the end face of the laser crystal to be absorbed by the laser crystal to generate spontaneous radiation to form oscillation, the oscillation light is incident to the plano-convex mirror at 0 degree to form 1064nm resonant laser, and is reflected to the acousto-optic modulator by the plano-convex mirror to form 1064nm resonant laser of stable pulse, the pulse laser with the wavelength of 532nm is obtained by being incident to a first reflector at 0 degree and being reflected to the frequency doubling of an LBO crystal by the first reflector, the pulse laser with the wavelength of 532nm is incident to a beam splitter with the wavelength of 56 degree and then reflected out of a resonant cavity, the pulse laser with the wavelength of 532nm reflected out of the resonant cavity is incident to a second reflector with the wavelength of 12 degree, and the laser beam is reflected into the CLBO quadruple frequency crystal by the second reflector to generate 266nm pulse laser and output the residual 532nm laser, passes through the Brewster isosceles prism, separates the 532nm laser and the 266nm laser by using a dispersion effect, and outputs the 266nm laser to a light outlet.
Further, the laser power supply comprises a main control circuit, a semiconductor module driving circuit, a Q driver control circuit and a high-precision temperature control circuit; the main control circuit is used for monitoring and controlling the working state of each part of the system, the semiconductor module driving circuit outputs a required direct current signal for driving the semiconductor module to emit pump light, the pump light is a light source of laser crystal stimulated radiation, the power of the pump light can be directly controlled by a driving power supply, the Q driver control circuit is used for driving an acousto-optic modulator switch to generate laser pulse, and the high-precision temperature control circuit is used for controlling the constant temperature of the frequency doubling crystal.
Further, the CLBO crystal is arranged in a constant-temperature sealing environment, and the temperature of the CLBO crystal is controlled to be 140 ℃.
Furthermore, the surfaces of the first plano-convex lens and the second plano-convex lens are both plated with 808nm high-transmittance films, the focal length is 25 mm-50 mm, and the diameter is 12.7 mm.
Furthermore, the convex surface of the plano-convex mirror is plated with a film highly reflecting 1064nm resonant light.
Furthermore, the first reflector is plated with a 1064nm resonance laser total reflection film with the thickness of 6mm, and the second reflector is plated with a 532nm frequency doubling laser total reflection film with the thickness of 6 mm.
Furthermore, the laser crystal adopts Nd: YVO4 crystal, the crystal length is 10 mm-20 mm, the atomic percentage of Nd ion doping in the Nd: YVO4 crystal is 0.2% -0.3%, and the surface of the Nd: YVO4 crystal is plated with a high-transparency film with the wavelength of 808 nm-1342 nm.
Furthermore, LBO crystal is adopted as the frequency doubling crystal, and CLBO crystal is adopted as the frequency quadrupler crystal.
The invention has the following advantages:
the 266nm deep ultraviolet solid laser separates the frequency-doubled 532nm laser in the resonant cavity; separating 266nm laser generated after quadruple frequency and residual 532nm laser by using a dispersion principle, and outputting the 266nm laser to a light outlet; the optical mode is better, and the light-light conversion efficiency reaches 80 percent.
Drawings
FIG. 1 is a schematic structural diagram of a 266nm deep ultraviolet solid-state laser according to the present invention.
Description of the drawings: 1-a first plano-convex lens; 2-a second plano-convex lens; 3-plano-convex mirror; 4-a first mirror; 5-laser crystal; 6-LBO frequency doubling crystal; 7-acousto-optic Q-switch; 8-532nm spectroscope; 9-a second mirror; 10-CLBO quadruple frequency crystal; 11-Brewster isosceles prism.
Detailed Description
The present invention will be described in detail with reference to fig. 1, and the technical solutions in the embodiments of the present invention will be clearly and completely described, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments; all other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention discloses a 266nm deep ultraviolet solid laser, which is characterized in that: the device comprises a laser power supply for providing laser crystal stimulated radiation, a water cooling system for cooling a laser, a 1064nm resonant cavity, an in-cavity frequency doubling light path and an out-cavity frequency quadruple light path, wherein the 1064nm resonant cavity comprises a first plano-convex lens, a second plano-convex lens, a plano-convex mirror, a laser crystal, an acousto-optic modulator and a first reflector;
the intracavity frequency doubling light path comprises an LBO frequency doubling crystal and a 532nm spectroscope;
the out-of-cavity quadruplex optical path comprises a second reflecting mirror, a CLBO quadruplex crystal and a Brewster isosceles prism;
the convex surfaces of the first plano-convex lens and the second plano-convex lens are opposite to form a coupling system;
the pump light incident to the coupling system is coupled by the coupling system and then focused on the end face of the laser crystal to be absorbed by the laser crystal to generate spontaneous radiation to form oscillation, the oscillation light is incident to the plano-convex mirror at 0 degree to form 1064nm resonant laser, and is reflected to the acousto-optic modulator by the plano-convex mirror to form 1064nm resonant laser of stable pulse, the pulse laser with the wavelength of 532nm is obtained by being incident to a first reflector at 0 degree and being reflected to the frequency doubling of an LBO crystal by the first reflector, the pulse laser with the wavelength of 532nm is incident to a beam splitter with the wavelength of 56 degree and then reflected out of a resonant cavity, the pulse laser with the wavelength of 532nm reflected out of the resonant cavity is incident to a second reflector with the wavelength of 12 degree, and the laser beam is reflected into the CLBO quadruple frequency crystal by the second reflector to generate 266nm pulse laser and output the residual 532nm laser, passes through the Brewster isosceles prism, separates the 532nm laser and the 266nm laser by using a dispersion effect, and outputs the 266nm laser to a light outlet.
In the embodiment, the laser is used for generating fundamental frequency light in a 1064nm resonant cavity, and generating pulse laser through an acousto-optic Q switch to provide high enough peak power for frequency-doubled 532nm laser; 532nm laser is generated in intracavity frequency doubling; pulse 532nm laser is obtained through frequency doubling in an LBO crystal cavity, and a resonant cavity is led out through a spectroscope; the 266nm laser is generated by quadruple frequency outside the cavity. Injecting 532nm laser into a CLBO crystal, generating 266nm laser through quadruple frequency, splitting the laser by an isosceles Brewster prism, and outputting the 266nm laser, wherein the frequency doubled 532nm laser is separated in a resonant cavity; separating 266nm laser generated after quadruple frequency and residual 532nm laser by using a dispersion principle, and outputting the 266nm laser to a light outlet; the optical mode is better, and the light-light conversion efficiency reaches 80 percent.
In a preferred embodiment, the laser power supply comprises a main control circuit, a semiconductor module driving circuit, a Q driver control circuit and a high-precision temperature control circuit; the high-precision temperature control circuit is used for controlling the constant temperature of the frequency doubling crystal, constant-temperature circulating clean water is provided by an external water cooler through a water cooling system, and a laser metal structure, a laser crystal, an acousto-optic device, an LD module, a circuit board and the like are radiated through a water channel arranged in the laser according to actual working conditions.
In a preferred embodiment, the CLBO crystal is arranged in a constant-temperature sealing environment, the temperature of the CLBO crystal is controlled to be 140 ℃, the main control system controls the semiconductor module to emit light, the water cooling system works, and the temperature control system maintains the temperature of the semiconductor module to be stable.
In a preferred embodiment, the surfaces of the first plano-convex lens and the second plano-convex lens are both plated with 808nm high-transmittance films, the focal length is 25 mm-50 mm, the diameter is 12.7mm, and the pumping light emitted by the semiconductor module is focused on the end face of the laser crystal through a double-lens or single-lens collimation system, so that the laser crystal absorbs the pumping light and starts to generate 1064nm resonant laser after reaching the laser threshold.
In a preferred embodiment, the convex surface of the plano-convex mirror is plated with a high reflection film for 1064nm resonant light.
In a preferred embodiment, the first reflector is coated with a film which is totally reflective to 1064nm resonant laser and has a thickness of 6mm, and the second reflector is coated with a film which is totally reflective to 532nm frequency doubling laser and has a thickness of 6 mm.
In a preferred embodiment, the laser crystal adopts Nd: YVO4 crystal, the crystal length is 10 mm-20 mm, the atomic percentage of Nd ion doping in the Nd: YVO4 crystal is 0.2% -0.3%, and the surface of the Nd: YVO4 crystal is plated with a high-transmittance film with the wavelength of 808 nm-1342 nm.
In a preferred embodiment, the frequency doubling crystal is an LBO crystal, and the frequency quadrupling crystal is a CLBO crystal.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (8)
1. A 266nm deep ultraviolet solid state laser characterized by: the device comprises a laser power supply for providing laser crystal stimulated radiation, a water cooling system for cooling a laser, a 1064nm resonant cavity, an in-cavity frequency doubling light path and an out-cavity frequency quadruple light path, wherein the 1064nm resonant cavity comprises a first plano-convex lens, a second plano-convex lens, a plano-convex mirror, a laser crystal, an acousto-optic modulator and a first reflector;
the intracavity frequency doubling light path comprises an LBO frequency doubling crystal and a 532nm spectroscope;
the out-of-cavity quadruplex optical path comprises a second reflecting mirror, a CLBO quadruplex crystal and a Brewster isosceles prism;
the convex surfaces of the first plano-convex lens and the second plano-convex lens are opposite to form a coupling system;
the pump light incident to the coupling system is coupled by the coupling system and then focused on the end face of the laser crystal to be absorbed by the laser crystal to generate spontaneous radiation to form oscillation, the oscillation light is incident to the plano-convex mirror at 0 degree to form 1064nm resonant laser, and is reflected to the acousto-optic modulator by the plano-convex mirror to form 1064nm resonant laser of stable pulse, the pulse laser with the wavelength of 532nm is obtained by being incident to a first reflector at 0 degree and being reflected to the frequency doubling of an LBO crystal by the first reflector, the pulse laser with the wavelength of 532nm is incident to a beam splitter with the wavelength of 56 degree and then reflected out of a resonant cavity, the pulse laser with the wavelength of 532nm reflected out of the resonant cavity is incident to a second reflector with the wavelength of 12 degree, and the laser beam is reflected into the CLBO quadruple frequency crystal by the second reflector to generate 266nm pulse laser and output the residual 532nm laser, passes through the Brewster isosceles prism, separates the 532nm laser and the 266nm laser by using a dispersion effect, and outputs the 266nm laser to a light outlet.
2. A 266nm deep ultraviolet solid state laser as defined in claim 1 wherein: the laser power supply comprises a main control circuit, a semiconductor module driving circuit, a Q driver control circuit and a high-precision temperature control circuit; the main control circuit is used for monitoring and controlling the working state of each part of the system, the semiconductor module driving circuit outputs a required direct current signal for driving the semiconductor module to emit pump light, the pump light is a light source of laser crystal stimulated radiation, the power of the pump light can be directly controlled by a driving power supply, the Q driver control circuit is used for driving an acousto-optic modulator switch to generate laser pulse, and the high-precision temperature control circuit is used for controlling the constant temperature of the frequency doubling crystal.
3. A 266nm deep ultraviolet solid state laser as defined in claim 2 wherein: the CLBO crystal is arranged in a constant-temperature sealing environment, and the temperature of the CLBO crystal is controlled to be 140 ℃.
4. A 266nm deep ultraviolet solid state laser as claimed in any one of claims 1 to 3, wherein: the surfaces of the first plano-convex lens and the second plano-convex lens are both plated with 808nm high-transmittance films, the focal length is 25-50 mm, and the diameter is 12.7 mm.
5. A266 nm deep ultraviolet solid state laser as claimed in claim 4, wherein: the convex surface of the plano-convex mirror is plated with a high reflection film for 1064nm resonant light.
6. A266 nm deep ultraviolet solid state laser as claimed in claim 5, wherein: the first reflector is plated with a 1064nm resonance laser total reflection film with the thickness of 6mm, and the second reflector is plated with a 532nm frequency doubling laser total reflection film with the thickness of 6 mm.
7. A 266nm deep ultraviolet solid state laser as defined in claim 1 wherein: the laser crystal adopts Nd: YVO4 crystal, the length of the crystal is 10 mm-20 mm, the atomic percentage of Nd ion doping in the Nd: YVO4 crystal is 0.2% -0.3%, and the surface of the Nd: YVO4 crystal is plated with a high-transmittance film with the wavelength of 808 nm-1342 nm.
8. A 266nm deep ultraviolet solid state laser as defined in claim 1 wherein: the frequency doubling crystal adopts LBO crystal, and the frequency quadrupling crystal adopts CLBO crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011571371.7A CN112688151A (en) | 2020-12-27 | 2020-12-27 | 266nm deep ultraviolet solid laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011571371.7A CN112688151A (en) | 2020-12-27 | 2020-12-27 | 266nm deep ultraviolet solid laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112688151A true CN112688151A (en) | 2021-04-20 |
Family
ID=75452026
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011571371.7A Pending CN112688151A (en) | 2020-12-27 | 2020-12-27 | 266nm deep ultraviolet solid laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112688151A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114665371A (en) * | 2022-02-27 | 2022-06-24 | 衢州学院 | Ultraviolet solid laser |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1418325A (en) * | 2000-12-14 | 2003-05-14 | 三菱电机株式会社 | Wavelength conversion method, wavelenth conversion device, and laser beam machine |
| CN1855648A (en) * | 2005-04-28 | 2006-11-01 | 深圳市大族激光科技股份有限公司 | Generation of solid laser with biquadratic harmonic wave |
| CN101533986A (en) * | 2008-03-11 | 2009-09-16 | 长春新产业光电技术有限公司 | Continuous-wave ultraviolet all-solid-state laser with novel structure |
| CN102570277A (en) * | 2012-01-21 | 2012-07-11 | 北京中科协众同益光电科技有限公司 | High-power full-solid ultraviolet laser device |
-
2020
- 2020-12-27 CN CN202011571371.7A patent/CN112688151A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1418325A (en) * | 2000-12-14 | 2003-05-14 | 三菱电机株式会社 | Wavelength conversion method, wavelenth conversion device, and laser beam machine |
| CN1855648A (en) * | 2005-04-28 | 2006-11-01 | 深圳市大族激光科技股份有限公司 | Generation of solid laser with biquadratic harmonic wave |
| CN101533986A (en) * | 2008-03-11 | 2009-09-16 | 长春新产业光电技术有限公司 | Continuous-wave ultraviolet all-solid-state laser with novel structure |
| CN102570277A (en) * | 2012-01-21 | 2012-07-11 | 北京中科协众同益光电科技有限公司 | High-power full-solid ultraviolet laser device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114665371A (en) * | 2022-02-27 | 2022-06-24 | 衢州学院 | Ultraviolet solid laser |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0744089B1 (en) | Passively q-switched picosecond microlaser | |
| US5182759A (en) | Apparatus and method for pumping of a weakly absorbing lasant material | |
| US20080037597A1 (en) | Laser Apparatus | |
| CN112260051B (en) | 1342nm infrared solid laser | |
| CN110932075B (en) | Dual-wavelength pulse pair laser output method and laser | |
| JP2019526924A (en) | Method of generating a frequency doubled laser and a harmonic laser | |
| CN112688151A (en) | 266nm deep ultraviolet solid laser | |
| US6512630B1 (en) | Miniature laser/amplifier system | |
| CN104269728A (en) | Semiconductor laser of solid-state ultraviolet laser | |
| CN111193168A (en) | Variable wavelength laser capable of switching output | |
| RU2304332C2 (en) | Micro-laser | |
| CN112003122B (en) | Subnanosecond infrared solid laser for acousto-optic Q-switching and control method thereof | |
| CN107994453A (en) | The Yb of laser diode-pumped tungsten disulfide tune Q：GYSO all solid state lasers | |
| US5748664A (en) | Solid state laser with positive thermal lens | |
| CN111725698A (en) | All-solid-state Raman frequency-doubling deep red laser and laser generation method | |
| CN111916987A (en) | High efficiency solid state UV laser | |
| CN112636146A (en) | High-power mode-locked disc laser | |
| CN104682182A (en) | Diode end-pumped all-solid-state laser | |
| CN104682183A (en) | Diode end-pumped all-solid-state laser | |
| CN112003120B (en) | 532nm continuous light green laser and control method thereof | |
| CN218123954U (en) | Single longitudinal mode ultraviolet all-solid-state laser | |
| CN212485790U (en) | All-solid-state Raman frequency doubling deep red laser | |
| CN110632805A (en) | Solid single-laser dual-wavelength pumping optical difference frequency terahertz wave generating device | |
| JPH11121842A (en) | Eyesafe laser beam generator | |
| Imai et al. | Long-pulse ultraviolet-laser sources based on tunable alexandrite lasers |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |