CN112667023B - Voltage generator with wide input range and voltage control method - Google Patents
Voltage generator with wide input range and voltage control method Download PDFInfo
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- CN112667023B CN112667023B CN202110273281.8A CN202110273281A CN112667023B CN 112667023 B CN112667023 B CN 112667023B CN 202110273281 A CN202110273281 A CN 202110273281A CN 112667023 B CN112667023 B CN 112667023B
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Abstract
The invention discloses a voltage generator with a wide input range and a voltage control method, which are realized by a P tube and a control circuit thereof. The source electrode of the P tube is connected with the input end, the drain electrode of the P tube is connected with the output end, the grid electrode of the P tube is connected with the control circuit, and the control circuit executes the following method to control the point position of the grid electrode of the P tube: and monitoring the current of the first power tube in real time, pulling up the potential of the grid electrode of the P tube when the current of the first power tube is not zero, and pulling down the potential of the grid electrode of the P tube when the current of the first power tube is zero. When the input voltage is lower, the control circuit pulls down the grid voltage of the P tube, the P tube is conducted, and the output voltage is approximately equal to the input voltage, so that the problem of low input loss is solved.
Description
Technical Field
The invention relates to the technical field of Integrated Circuit (IC) chip power management, in particular to a voltage generator with a wide input range and a voltage control method.
Background
Because the current market environment has higher and higher requirements on the integration level of the IC chip and wider power supply range, the conventional voltage stabilizing circuit is shown in FIG. 1, when VM is low, namely VM-VGSM1Is less than D1At reverse breakdown voltage of (2), VM passes through R1Directly to M7Then VOUT = VM-VGSM7At this time, there is a voltage loss of one VGS in VOUT. Therefore, the existing voltage stabilizing circuit cannot simultaneously meet the driving capability and low voltage loss of high-voltage input and low-voltage input, and is difficult to meet the requirement of further development of the current IC chip.
Disclosure of Invention
The invention aims to: in view of the above problems, a voltage generator with a wide input range is provided to satisfy the driving capability of high voltage input and low voltage input at the same time and overcome the low voltage loss of low voltage input.
The technical scheme adopted by the invention is as follows:
a voltage generator with a wide input range comprises an input end, a first resistor, a first diode, a first power tube, a second power tube, a third power tube, a control circuit and an output end, wherein the first power tube and the second power tube are both N-type power tubes; the input voltage is input from an input end, the input end is connected with a first resistor, the first resistor is connected with a drain electrode of a first power tube through a first diode, the first resistor is connected with the cathode of the first diode, the grid electrode of the first power tube is connected with a source electrode, and the drain electrode of the first power tube is connected with low potential; the drain electrode of the second power tube is connected with the input end, the grid electrode of the second power tube is connected between the first resistor and the first diode, and the source electrode of the second power tube is connected with the output end; the third power tube is a P-type power tube; the source electrode of the third power tube is connected with the input end, the drain electrode of the third power tube is connected with the output end, and the grid electrode of the third power tube is connected with the control circuit; the control circuit is used for pulling down the gate potential of the third power tube when the input voltage is lower than the reference voltage (the input voltage is considered to be lower), and pulling up the gate potential of the third power tube when the input voltage is higher than the reference voltage (the input voltage is considered to be higher).
When the output voltage is low, VM-VGSM1The reverse breakdown voltage of the first diode is smaller than, the first power tube is turned off, no current exists, the current mirror module does not have current, the grid potential of the third power tube is pulled down by the second resistor, the third power tube is conducted, and the voltage input by the input end is output to the output end through the third power tube and the second power tube, so that VOUT = VM and the voltage redundancy consumption is reduced. When the input voltage is higher, the first diode is reversely broken down, the first power tube is conducted, the current mirror module mirrors the current of the first power tube, the second resistor pulls the grid potential of the third power tube high, the third power tube is turned off, and the voltage input by the input end is output to the output end through the second power tube.
Furthermore, the control circuit comprises a current mirror module and a second resistor, the current mirror module is connected with the power tube and is used for mirroring the current of the power tube, the output end of the current mirror module is connected with the grid electrode of the third power tube, the grid electrode of the third power tube is connected with a low potential through the second resistor, and the second resistor adjusts the potential of the grid electrode of the third power tube according to the current output by the current mirror module.
Further, the current mirror module comprises a first current mirror circuit, a current equivalent circuit and a second current mirror circuit; the first current mirror circuit is connected with the first power tube and mirrors the current of the first power tube; the current equivalent circuit obtains a current equivalent to the first current mirror circuit; the second current mirror circuit is connected with the current equivalent circuit, mirrors the current of the current equivalent circuit, and the output end of the second current mirror circuit is connected with the grid electrode of the third power tube.
Further, the current mirror module includes a fourth power tube, a fifth power tube, a sixth power tube and a seventh power tube, where the fourth power tube and the fifth power tube are N-type power tubes, and the sixth power tube and the seventh power tube are P-type power tubes; the grid electrode of the fourth power tube is connected with the grid electrode of the first power tube, the source electrode of the fourth power tube is connected with low potential, and the drain electrode of the fourth power tube is connected with the source electrode of the fifth power tube; the grid electrode of the fifth power tube is connected between the first resistor and the first diode, and the drain electrode of the fifth power tube is connected with the drain electrode of the sixth power tube; the source electrode of the sixth power tube is connected with the input end, the drain electrode of the sixth power tube is connected with the grid electrode, and the grid electrode of the sixth power tube is connected with the grid electrode of the seventh power tube; and the source electrode of the seventh power tube is connected with the input end, and the drain electrode of the seventh power tube is connected with the grid electrode of the third power tube.
The fifth power tube is designed between the fourth power tube and the sixth power tube, so that the fourth power tube can be isolated at high voltage and prevented from being broken down, and conditions are created for the fourth power tube to mirror the current of the first power tube.
Further, the third power tube is designed with a high-voltage protection circuit.
Further, the drain electrode of the third power tube is connected with a low potential through a third resistor.
The voltage stabilizing circuit further comprises a filter circuit, wherein the filter circuit carries out filtering processing on the output voltage of the output end.
In order to solve all or part of the problems, the invention also provides a voltage control method which is applied to a voltage generator, wherein the voltage generator comprises an input end, a first resistor, a first diode, a first power tube, a second power tube and an output end, and the first power tube and the second power tube are both N-type power tubes; the input voltage is input from an input end, the input end is connected with a first resistor, the first resistor is connected with a drain electrode of a first power tube through a first diode, the first resistor is connected with the cathode of the first diode, the grid electrode of the first power tube is connected with a source electrode, and the drain electrode of the first power tube is connected with low potential; the drain electrode of the second power tube is connected with the input end, the grid electrode of the second power tube is connected between the first resistor and the first diode, and the source electrode of the second power tube is connected with the output end; the voltage control method comprises the following steps:
designing a third power tube, wherein the third power tube is a P-type power tube, the source electrode of the third power tube is connected with the input end, the drain electrode of the third power tube is connected with the output end, and the grid electrode of the third power tube is connected with the control circuit; the control circuit executes the following method to control the electric potential of the grid electrode of the third power tube:
and monitoring the current of the first power tube in real time, pulling up the potential of the grid electrode of the third power tube when the current of the first power tube is not zero, and pulling down the potential of the grid electrode of the third power tube when the current of the first power tube is zero.
Further, for monitoring the current of the first power tube, the current of the first power tube is mirrored; and for the control of the grid potential of the third power tube, a second resistor is connected to the grid of the third power tube to the ground, and the mirror current of the first power tube is applied to the second resistor.
Further, the method further comprises: and shunting the output end.
In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that:
1. the invention combines the P-type power tube and the N-type power tube as the driving stage, so that the output voltage is approximately equal to the input voltage when the input voltage is lower, and the output voltage is approximately constant at a stable value when the input voltage is higher.
2. The invention can ensure the normal operation of the circuit even when the input voltage is higher, and can avoid the situation that the device is burnt.
3. The invention designs the shunt circuit, namely designs the light load, and can slightly adjust the output voltage difference when the P-type power tube and the N-type power tube are switched.
4. The invention designs the filter circuit, which can prevent the sudden drop of the output voltage when the load is changed.
Drawings
The invention will now be described, by way of example, with reference to the accompanying drawings, in which:
fig. 1 is a circuit diagram of a present voltage generator.
Fig. 2 is an embodiment of the voltage generator of the present invention.
In the figure, M1Is a first power tube, M2Is a fourth power tube, M3Is a fifth power tube, M4Is a sixth power tube, M5Is a seventh power tube, M6Is a third power tube, M7Is a second power tube, M8Is an eighth power tube, R1Is a first resistance, R2Is a second resistance, R3Is a third resistance, R4Is a fourth resistance, D1Is a first diode, D2 is a second diode, D3Is a third diode, D4Is a fourth diode, C1For the first capacitor, VM is the input voltage, VOUT is the output voltage.
Detailed Description
All of the features disclosed in this specification, or all of the steps in any method or process so disclosed, may be combined in any combination, except combinations of features and/or steps that are mutually exclusive.
Any feature disclosed in this specification (including any accompanying claims, abstract) may be replaced by alternative features serving equivalent or similar purposes, unless expressly stated otherwise. That is, unless expressly stated otherwise, each feature is only an example of a generic series of equivalent or similar features.
Generally, the withstand voltage between the gate oxides is not higher than a reference voltage, so the operating voltage of the CMOS inside the chip is not higher than the reference voltage, and with the reference voltage as a voltage limit, an input voltage lower than the reference voltage is regarded as a lower input voltage, and an input voltage higher than the reference voltage is regarded as a higher input voltage, and the reference voltage is usually 6V.
Example one
The basic circuit structure of the present voltage generator is shown in fig. 1, where VM is the voltage input at the input terminal, and VM-VGS is when VM is lowM1Is less than D1When the reverse breakdown voltage is exceeded, the branch is not conducted and VM passes through R1Directly to M7Then VOUT = VM-VGSM7At this time, there is a voltage loss of one VGS in VOUT. And VOUT = VBR at higher VMD1+VGSM1-VGSM7。
In order to solve the voltage loss problem of VOUT, the present embodiment provides a voltage generator with a wide input range, which includes a basic circuit structure, as shown in fig. 1, where the basic circuit structure shown in fig. 1 includes an input terminal, a first resistor R1A first diode D1A first power tube M1A second power tube M7And an output terminal, a first power tube M1And a second power tube M7Are all N-type power tubes, and usually have a first resistor R1The resistance value of (a) is in the megaohm range. The input voltage is input from the input terminal. The input end is connected with a first resistor R1First resistance R1Through a first diode D1And the first power tube M1Is connected to the drain of the first resistor R1Connecting a first diode D1Negative electrode, first power tube M1A grid connected to the source, a first power transistor M1The drain is connected to a low potential. Second power tube M7Has a drain connected to the input terminal and a gate connected to the first resistor R1And a first diode D1And the source is connected with the output end.
On the basis of the basic circuit structure shown in FIG. 1, a third power tube M is added6And a control circuit thereof. Third power tube M6The power transistor is a P-type power transistor, the source electrode of the power transistor is connected with the input end, the drain electrode of the power transistor is connected with the output end, and the grid electrode of the power transistor is connected with the control circuit. The control circuit is pulled down the third power tube M when the VM input voltage is lower6Grid potential, pulling up the third power transistor M when the VM input voltage is high6The gate potential. When the VM input voltage is lower, the third power tube M6Is pulled low, the third work is doneRate tube M6And conducting to enable the output end voltage VOUT = VM and reduce voltage redundancy consumption. When the VM input voltage is higher, the third power tube M6Is pulled high, the third power transistor M is now6The internal resistance is larger, and the third power tube M6Approximately turned off, and the output end voltage VOUT = VBRD1+VGSM1-VGSM7。
Specifically, the control circuit comprises a current mirror module and a second resistor R2A second resistance R2The resistance value is selected to be in the order of one hundred kilohms, and the current mirror module is connected with the first power tube M1For mirroring the first power transistor M1The output end of the current mirror module is connected with a third power tube M6Grid of, the third power tube M6Is also passed through a second resistor R2At low potential, a second resistor R2Regulating a third power tube M according to the current output by the current mirror module6The potential of the gate. Through the design, when the output voltage VM is low, VM-VGSM1Smaller than the first diode D1Reverse breakdown voltage VBRD1First power tube M1When the circuit is turned off, no current exists, the current mirror module does not have current, and then the second resistor R2A third power tube M6Grid potential is pulled down, and a third power tube M6Conducting, the voltage input from the input end passes through the third power tube M6And a second power tube M7And outputting the voltage to an output end to enable VOUT = VM, and reducing voltage redundancy consumption. While the first diode D is higher when the input voltage VM is higher1Is reversely broken down, the first power tube M1Conducting, the current mirror module mirrors the first power tube M1Of the second resistor R2A third power tube M6Grid potential is pulled high, and a third power tube M6The voltage input by the input end passes through the second power tube M7Output to output terminal so that VOUT = VBRD1+VGSM1-VGSM7。
In some embodiments, the current mirror module includes a first current mirror circuit, a current equivalent circuit, and a second current mirror circuit. Wherein the first current mirror circuit is connected with the first power tube M1Mirror image first power tube M1The current of (2). The current equivalent circuit obtains the current equivalent to the first current mirror circuit, and the current equivalent circuit can be realized in a series connection mode. The second current mirror circuit is connected with the current equivalent circuit, mirrors the current of the current equivalent circuit, and the output end of the second current mirror circuit is connected with the third power tube M6As the output terminal of the current mirror module.
In some embodiments, as shown in fig. 2, the first current mirror circuit includes a fourth power transistor M2Fourth power tube M2Is an N-type power transistor, the grid of which is connected with a first power transistor M1The source is connected with low potential, and the drain is connected with the current equivalent circuit. The current equivalent circuit comprises a sixth power tube M4Sixth power tube M4The power transistor is a P-type power transistor, the source electrode of the power transistor is connected with the input end, the drain electrode of the power transistor is connected with the first current mirror circuit, the grid electrode of the power transistor is connected with the second current mirror circuit, and the grid electrode of the power transistor is connected with the drain electrode of the power transistor. Breakdown of the fourth power transistor M to prevent the input voltage VM from being too high2Fourth power tube M2And a sixth power transistor M4A high-voltage isolation circuit is connected between the first power tube and the second power tube, and when the input voltage VM is overhigh, the high-voltage isolation circuit divides most of voltage to the fourth power tube M2Plays a role of isolating high voltage and is a first power tube M1And a fourth power tube M2The mirror current creates conditions. In some embodiments, the high-voltage isolation circuit adopts a fifth power tube M3The fifth power tube M3Is an N-type power transistor, and the grid electrode of the N-type power transistor is connected with a first resistor R1And a first diode D1Between the source electrode and the fourth power tube M2(drain electrode of) connected to the sixth power transistor M4(the drain of). Since the fifth power tube M3Needs to play a role of high-voltage isolation, and the VDS voltage of the high-voltage isolation circuit is VM-VGSM4-VGSM2Therefore, the fifth power tube M3High voltage devices need to be used. The second current mirror circuit comprises a seventh power tube M5Seventh power tube M5Is a P-type power tube, a seventh power tube M5The grid electrode of the first power tube is connected with the current equivalent circuit, the source electrode of the first power tube is connected with the input end, and the drain electrode of the first power tube is connected with the third power tube M6A gate electrode of (1). When the input voltage VM is higherWhile, the first diode D1On with breakdown voltage VBRD1Then through the second power tube M7Has VOUT = VBRD1+VGSM1-VGSM7. First diode D1After the power-on, the power-on is carried out,
through a current mirror, a second resistor R2Voltage on is equal to
Where W represents the device width and L represents the device length. A second resistor R2The value is larger, so that M6The internal resistance is larger, and the third power tube M6Relative to the second power tube M7Substantially in an off state. For a particular selection, in some embodiments, M4、M5、M6Selecting PLDMOS, M3、M7、M8Selecting NLDMOS, M1、M2And a CMOS is selected.
Further, to prevent the input high voltage from breaking down the third power transistor M6For the third power tube M6A high-voltage protection circuit is also designed to protect the third power tube M when the input voltage is too high6And performing overvoltage protection. In some embodiments, the third power tube M6A second diode D2 is connected between the gate and the input terminal, the cathode of the second diode D2 is connected to the input terminal, and the second diode D2 can effectively prevent the third power transistor M6The VGS voltage of (1) is too large to break down.
To prevent the output voltage from floating due to the transient variation of the input voltage, the third power transistor M6Is also passed through a third resistor R3Connecting a low potential, third resistor R3The load is light, can be adjusted to other types of loads according to actual conditions, the resistance value of the load is designed according to the actual conditions, and the load is arranged on the third power tube M6And a second power tube M7When the output is switched, the output voltage difference between the two is slightly adjusted. In the third power tube M6In the off state, the third resistor R3The resistance value is far smaller than that of the third power tube M6Thus, the output voltage is outputted from the second power tube M7And (4) determining.
The voltage generator further includes a filter circuit that performs a filtering process on the output voltage at the output terminal to make the output voltage change gently in correspondence with an abrupt change in the rated voltage of the load. In some embodiments, the filter circuit comprises a first capacitor C1The first capacitor C1One end is connected with a third power tube M6And the other end of the drain is connected with a low potential. A first capacitor C1The charge is stored, the voltage compensation is carried out under the condition of sudden load change, and the capacitance is designed according to the actual condition. Due to the third power tube M6And the second power tube M7The source electrodes of the first and second power transistors are all connected with the output end, then the third power transistor M6And a second power tube M7In parallel connection, the filter circuit is simultaneously connected with the second power tube M7The output voltage of (a) is filtered.
The circuit at the output end comprises a fourth resistor R in a series structure4A third diode D3A fourth diode D4And an eighth power transistor M8The eighth power tube M8Is an N-type power transistor with its gate and drain connected, and voltage is supplied from a fourth resistor R4And a third diode D3And (4) outputting. Third diode D3And a fourth diode D4Forming an overvoltage protection circuit. Third diode D3A fourth diode D4Eighth power tube M8As the last stage protection, the protection voltage limit is VBR to prevent the later stage CMOS circuit from being broken down and damagedD3+VPND4+VGSM8。
Example two
The present embodiment discloses a voltage control method, which is applied to the voltage generator shown in fig. 1, wherein the basic circuit structure of the voltage generator shown in fig. 1 includes an input terminal, a first resistor R1A first diode D1A first power tube M1A second power tube M7And an output terminal, a first power tube M1And a second power tube M7Are all N-type power tubes. A first resistor R1Usually in the megaohm rangeOtherwise. The input voltage is input from the input end which is connected with the first resistor R1First resistance R1Through a first diode D1And the first power tube M1Is connected to the drain of the first resistor R1Connecting a first diode D1Negative electrode, first power tube M1A grid connected to the source, a first power transistor M1The drain is connected to a low potential. Second power tube M7Has a drain connected to the input terminal and a gate connected to the first resistor R1And a first diode D1And the source is connected with the output end. The circuit at the output end comprises a fourth resistor R in a series structure4A third diode D3A fourth diode D4And an eighth power transistor M8The eighth power tube M8Is an N-type power transistor with its gate and drain connected, and voltage is supplied from a fourth resistor R4And a third diode D3And (4) outputting. Third diode D3And a fourth diode D4Forming an overvoltage protection circuit.
The voltage control method of the embodiment comprises the following steps:
design the third power tube M6The third power tube M6The power transistor is a P-type power transistor, the source electrode of the power transistor is connected with the input end, the drain electrode of the power transistor is connected with the output end, and the grid electrode of the power transistor is connected with the control circuit; the control circuit executes the following method to the third power tube M6The potential of the gate of (2) is controlled:
real-time monitoring first power tube M1At the first power tube M1When the current of the third power tube M is not zero, the third power tube M is pulled up6Potential of grid at the first power transistor M1When the current is zero, the third power tube M is pulled down6The potential of the gate. When the VM output voltage is low, VM-VGSM1Smaller than the first diode D1Reverse breakdown voltage VBRD1First power tube M1Turning off, no current, and connecting the third power tube M6Grid potential is pulled down, and a third power tube M6Conducting, the voltage input from the input end passes through the third power tube M6And a second power tube M7And outputting the voltage to an output end to enable VOUT = VM, and reducing voltage redundancy consumption. And when the VM input voltage is higher, the first diode D1Is reversely broken down, the first power tube M1Conducting the third power tube M6Grid potential is pulled high, and a third power tube M6The voltage input by the input end passes through the second power tube M7Output to output terminal so that VOUT = VBRD1+VGSM1-VGSM7。
For the first power tube M1Monitoring of the current by mirroring the first power transistor M1Is performed. In some embodiments, the current mirror module is connected to the first power tube M1To the first power tube M1And (4) carrying out mirror image acquisition on the current. The current mirror module comprises a first current mirror circuit, a current equivalent circuit and a second current mirror circuit. Wherein the first current mirror circuit is connected with the first power tube M1Mirror image first power tube M1The current of (2). The current equivalent circuit is connected in series with the first current mirror circuit. The second current mirror circuit is connected with the current equivalent circuit, mirrors the current of the current equivalent circuit, and the output end of the second current mirror circuit is used as the output end of the current mirror module.
In some embodiments, the first current mirror circuit includes a fourth power transistor M2Fourth power tube M2Is an N-type power transistor, the grid of which is connected with a first power transistor M1The source is connected with low potential, and the drain is connected with the current equivalent circuit. The current equivalent circuit comprises a sixth power tube M4Sixth power tube M4The power transistor is a P-type power transistor, the source electrode of the power transistor is connected with the input end, the drain electrode of the power transistor is connected with the first current mirror circuit, the grid electrode of the power transistor is connected with the second current mirror circuit, and the grid electrode of the power transistor is connected with the drain electrode of the power transistor. Breakdown of the fourth power transistor M to prevent the input voltage VM from being too high2Fourth power tube M2And a sixth power transistor M4A high-voltage isolation circuit is connected between the first power tube and the second power tube, and when the input voltage VM is overhigh, the high-voltage isolation circuit divides most of voltage to the fourth power tube M2Plays a role of isolating high voltage and is a first power tube M1And a fourth power tube M2The mirror current creates conditions. In some embodiments, the high-voltage isolation circuit adopts a fifth power tube M3The fifth power tube M3Is an N-type power tube, and is provided with a plurality of power tubes,the grid of which is connected with a first resistor R1The source electrode is connected with a fourth power tube M2(drain electrode of) connected to the sixth power transistor M4(the drain of). Since the fifth power tube M3Needs to play a role of high-voltage isolation, and the VDS voltage of the high-voltage isolation circuit is VM-VGSM4-VGSM2Therefore, the fifth power tube M3High voltage devices need to be used. The second current mirror circuit comprises a seventh power tube M5Seventh power tube M5Is a P-type power tube, a seventh power tube M5The grid electrode of the first power tube is connected with the current equivalent circuit, the source electrode of the first power tube is connected with the input end, and the drain electrode of the first power tube is connected with the third power tube M6A gate electrode of (1).
For the third power tube M6Control of the grid potential by applying a voltage to the third power transistor M6Is connected to the second resistor R2Will be to the first power tube M1Is applied to the second resistor R2The method is implemented. A second resistor R2The resistance value is selected to be in the order of one hundred kilohms.
Further, to prevent the input high voltage from breaking down the third power transistor M6For the third power tube M6A high-voltage protection circuit is also designed to protect the third power tube M when the input voltage is too high6And performing overvoltage protection. In some embodiments, the third power tube M6A second diode D2 is connected between the gate and the input terminal, the cathode of the second diode D2 is connected to the input terminal, and the second diode D2 can effectively prevent the third power transistor M6The VGS voltage of (1) is too large to break down.
In order to prevent the output voltage from floating high due to the transient variation of the input voltage, the voltage control method further comprises: and shunting the output end. The shunting is usually realized by designing a shunting circuit, and in some embodiments, the shunting circuit comprises a third resistor and a third power tube M6Is also passed through a third resistor R3Low potential is connected to the third power transistor M6And a second power tube M7During switching, the output voltage difference during switching is slightly adjusted. Third resistor R3Equivalent to a light load.
To avoid the occurrence of drive voltage caused by sudden change of load powerAbruptly changing to increase stability of the voltage output, the voltage control method further comprising: the output voltage at the output terminal is subjected to filtering processing so as to be gently changed in accordance with a sudden change in the rated voltage of the load. The filtering process is typically implemented by a filter circuit, which in some embodiments comprises a first capacitor C1The first capacitor C1One end is connected with a third power tube M6And the other end of the drain is connected with a low potential. A first capacitor C1When the voltage generator outputs an electric signal, electric charges are stored, voltage compensation is carried out under the condition that the load suddenly changes, therefore, the change speed of the output voltage is slowed down, and the capacitance of the voltage generator is designed according to the actual situation. Due to the third power tube M6And the second power tube M7The source electrodes of the first and second power transistors are all connected with the output end, then the third power transistor M6And a second power tube M7In parallel connection, the filter circuit is simultaneously connected with the second power tube M7The output voltage of the output terminal is filtered, so that the filtering processing of the output voltage of the output terminal is realized.
The invention is not limited to the foregoing embodiments. The invention extends to any novel feature or any novel combination of features disclosed in this specification and any novel method or process steps or any novel combination of features disclosed.
Claims (8)
1. A voltage generator with wide input range comprises an input end, a first resistor (R)1) A first diode (D)1) A first power tube (M)1) A second power tube (M)7) And an output terminal, a first power tube (M)1) And a second power tube (M)7) All are N-type power tubes; the input voltage is input from the input terminal, which is connected to the first resistor (R)1) First resistance (R)1) Through the first diode (D)1) And a first power tube (M)1) Is connected to the drain of the first resistor (R)1) Connecting a first diode (D)1) Negative electrode, first power tube (M)1) A gate connected to the source, a first power transistor (M)1) The drain electrode is connected with low potential; second power tube (M)7) Is connected to the drain electrodeAn input terminal, a gate connected to the first resistor (R)1) And a first diode (D)1) The source electrode is connected with the output end; characterized in that the device also comprises a third power tube (M)6) And its control circuit, the third power tube (M)6) Is a P-type power tube; third power tube (M)6) The source electrode is connected with the input end, the drain electrode is connected with the output end, and the grid electrode is connected with the control circuit; the control circuit pulls down the third power transistor (M) when the input Voltage (VM) is lower than the reference voltage6) A grid potential for pulling up the third power tube (M) when the input Voltage (VM) is higher than the reference voltage6) A gate potential; the control circuit comprises a current mirror module and a second resistor (R)2) The current mirror module is connected with a first power tube (M)1) For mirroring the first power transistor (M)1) The output end of the current mirror module is connected with a third power tube (M)6) Grid of (D), third power transistor (M)6) Is also passed through a second resistor (R)2) At low potential, a second resistor (R)2) Regulating a third power transistor (M) in dependence on the current output by the current mirror module6) The potential of the gate.
2. The wide input range voltage generator of claim 1, wherein the current mirror module comprises a first current mirror circuit, a current equivalent circuit, and a second current mirror circuit; the first current mirror circuit is connected with a first power tube (M)1) Mirror image first power tube (M)1) The current of (a); the current equivalent circuit obtains a current equivalent to the first current mirror circuit; the second current mirror circuit is connected with the current equivalent circuit, mirrors the current of the current equivalent circuit, and the output end of the second current mirror circuit is connected with the third power tube (M)6) A gate electrode of (1).
3. The wide input range voltage generator according to claim 2, wherein the current mirror module comprises a fourth power transistor (M)2) And the fifth power tube (M)3) Sixth power tube (M)4) Andseventh power tube (M)5) Said fourth power tube (M)2) And a fifth power tube (M)3) Is an N-type power tube, the sixth power tube (M)4) And a seventh power tube (M)5) Is a P-type power tube; the fourth power tube (M)2) The grid is connected with a first power tube (M)1) A source electrode is connected with a low potential, and a drain electrode is connected with a fifth power tube (M)3) A source electrode of (a); the fifth power tube (M)3) The grid is connected with a first resistor (R)1) And a first diode (D)1) Between the drain electrode and the sixth power tube (M)4) A drain electrode of (1); the sixth power tube (M)4) Is connected with the input end, the drain electrode is connected with the grid electrode, and the grid electrode is connected with a seventh power tube (M)5) A gate electrode of (1); the seventh power tube (M)5) Is connected with the input end, and the drain electrode is connected with the third power tube (M)6) A gate electrode of (1).
4. The wide input range voltage generator according to claim 1, wherein the third power transistor (M)6) A high-voltage protection circuit is designed.
5. The wide input range voltage generator according to claim 1, wherein the third power transistor (M)6) Through a third resistor (R)3) A low potential is connected.
6. The wide input range voltage generator of claim 1, further comprising a filter circuit that filters the output voltage at the output terminal.
7. A voltage control method is applied to a voltage generator which comprises an input end, a first resistor (R)1) A first diode (D)1) A first power tube (M)1) A second power tube (M)7) And an output terminal, a first power tube (M)1) And a second power tube (M)7) Are all made ofIs an N-type power tube; the input voltage is input from the input terminal, which is connected to the first resistor (R)1) First resistance (R)1) Through the first diode (D)1) And a first power tube (M)1) Is connected to the drain of the first resistor (R)1) Connecting a first diode (D)1) Negative electrode, first power tube (M)1) A gate connected to the source, a first power transistor (M)1) The drain electrode is connected with low potential; second power tube (M)7) Is connected to the input terminal, and the gate is connected to a first resistor (R)1) And a first diode (D)1) The source electrode is connected with the output end; the voltage control method is characterized by comprising the following steps:
design the third power tube (M)6) Said third power tube (M)6) The power transistor is a P-type power transistor, the source electrode of the power transistor is connected with the input end, the drain electrode of the power transistor is connected with the output end, and the grid electrode of the power transistor is connected with the control circuit; the control circuit executes the following method to the third power tube (M)6) The potential of the gate of (2) is controlled:
monitoring a first power transistor (M) in real time1) At the first power tube (M)1) When the current of (M) is not zero, the third power tube (M) is pulled up6) Potential of the grid electrode in the first power tube (M)1) When the current of the third power tube is zero, the third power tube (M) is pulled down6) The potential of the gate;
for the first power tube (M)1) Monitoring of the current by mirroring the first power transistor (M)1) The current implementation of (2); for the third power tube (M)6) Control of the grid potential by means of a third power transistor (M)6) Is connected to the second resistor (R) to ground2) To the first power tube (M)1) Is applied to the second resistor (R)2) The method is implemented.
8. The voltage control method of claim 7, further comprising: and shunting the output end.
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106226569A (en) * | 2016-08-28 | 2016-12-14 | 成都元始信息科技有限公司 | A kind of sensed signal sources circuit based on clock control |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2834396B1 (en) * | 2002-01-03 | 2004-02-27 | Cit Alcatel | VERY WIDE LOAD PUMP OUTPUT VOLTAGE RANGE |
| US6989659B2 (en) * | 2002-09-09 | 2006-01-24 | Acutechnology Semiconductor | Low dropout voltage regulator using a depletion pass transistor |
| KR100554979B1 (en) * | 2003-10-31 | 2006-03-03 | 주식회사 하이닉스반도체 | Reference voltage generator |
| JP2008108009A (en) * | 2006-10-24 | 2008-05-08 | Matsushita Electric Ind Co Ltd | Reference voltage generation circuit |
| CN100504710C (en) * | 2007-09-20 | 2009-06-24 | 华中科技大学 | Band-gap reference source with high power supply restraint |
| CN101571727B (en) * | 2009-06-11 | 2012-10-10 | 四川和芯微电子股份有限公司 | Current-type band gap reference source circuit starting circuit |
| CN102289242A (en) * | 2011-02-23 | 2011-12-21 | 李仲秋 | NPN-type transistor reference voltage generating circuit |
| EP3176669B1 (en) * | 2015-11-30 | 2019-01-09 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Circuit for generating a reference voltage |
| CN105739586B (en) * | 2016-04-01 | 2017-09-22 | 深圳还是威健康科技有限公司 | A kind of current reference source circuit |
| CN107608441B (en) * | 2017-10-26 | 2019-10-25 | 中国科学院上海高等研究院 | A kind of high-performance reference voltage source |
-
2021
- 2021-03-15 CN CN202110273281.8A patent/CN112667023B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106226569A (en) * | 2016-08-28 | 2016-12-14 | 成都元始信息科技有限公司 | A kind of sensed signal sources circuit based on clock control |
Non-Patent Citations (2)
| Title |
|---|
| Calculation of the assembled grounding resistance from complex grounding systems by using analytical considerations only;Martin Hannig;《2018 IEEE International Conference on High Voltage Engineering and Application》;20190214;第1-4页 * |
| 高精度带隙基准电压源的设计;支知渊;《中国优秀硕士学位论文全文数据库信息科技辑》;20170315(第03期);第I135-778页 * |
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