CN112650023A - High-resolution photoresist composition and application thereof - Google Patents
High-resolution photoresist composition and application thereof Download PDFInfo
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- CN112650023A CN112650023A CN202011536992.1A CN202011536992A CN112650023A CN 112650023 A CN112650023 A CN 112650023A CN 202011536992 A CN202011536992 A CN 202011536992A CN 112650023 A CN112650023 A CN 112650023A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
- G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F8/00—Chemical modification by after-treatment
- C08F8/34—Introducing sulfur atoms or sulfur-containing groups
- C08F8/36—Sulfonation; Sulfation
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
Abstract
The invention provides a high-resolution photoresist composition and application thereof, wherein the high-resolution photoresist composition comprises the following raw material components in parts by mass: 10-30 parts of phenolic resin, 1-20 parts of photosensitive reinforced resin, 1-3 parts of photosensitizer and 70-100 parts of organic solvent. The photosensitive property of the photoresist composition is optimized by adding the photosensitive enhanced resin, so that the composition has higher resolution and is suitable for micro-processing in various fields such as touch screens, flat panel displays, integrated circuits and the like.
Description
Technical Field
The invention relates to the technical field of photoetching, in particular to a high-resolution photoresist composition and application thereof.
Background
The photoresist is a resist film material whose solubility is changed by irradiation or radiation of an exposure source such as ultraviolet light, electron beam, excimer laser beam, X-ray, ion beam, or the like. The mask is mainly used for photoetching in a pattern transfer process from a mask plate to a chip, is a key material in a photoetching process, develops along with the development of an integrated circuit, and is continuously updated. The photoresist is divided into positive and negative photoresist. After exposure, the irradiated part of the positive photoresist becomes easy to dissolve, and after development, the positive photoresist is dissolved, and only the part which is not irradiated is left to form a pattern; on the contrary, the negative photoresist is not easy to dissolve after exposure, and after development, the negative photoresist with a pattern formed by the exposed part is used for the photolithography process at the earliest time, so that the process cost is low, the yield is high, but the negative photoresist expands after absorbing the developing solution, so that the resolution (i.e. the minimum pattern formed in the photolithography process) is not as good as the positive photoresist, and therefore, the positive photoresist is mainly used for the processing technology with submicron or even smaller size.
Most of positive photoresists used in the prior art are diazonaphthoquinone/phenolic resin photoresists, which take linear phenolic resin as film-forming resin and diazonaphthoquinone sulfonate as photosensitizer, the diazonaphthoquinone sulfonate can remarkably reduce the solubility of the linear phenolic resin in an alkaline developer, and after exposure, the diazonaphthoquinone sulfonate can be photolyzed and rearranged to generate carboxylic acid, so that the dissolving speed of a system in the developer is increased by dozens of times to nearly thousand times.
For example, in patent publication CN101561632A, a photoresist composition in which an alkali soluble resin is a salicylaldehyde phenol resin and a photosensitizer is an o-azidonaphthoquinone compound, and a method for manufacturing a display panel using the same are proposed, and a pattern formed using such a photoresist composition exhibits heat resistance up to 140 ℃. Although the photoresist resin of the present invention can realize pattern uniformity by satisfying heat resistance, photosensitivity and film thickness uniformity, the line width of the formed photolithographic image is 3 μm or more, and the resolution cannot satisfy the requirement of high resolution.
In recent years, with the development of the microelectronic industry, the integrated circuit integration level is higher and higher, the processing line width is gradually reduced, and higher requirements are also put forward on the resolution of the photoresist, so that the photoresist composition capable of meeting the higher resolution is urgently developed.
Disclosure of Invention
Based on the technical problems in the background art, the invention provides a high-resolution photoresist composition, which optimizes the photosensitive property by adding photosensitive enhanced resin, so that the composition has higher resolution and is suitable for micro-processing in various fields such as touch screens, flat panel displays, integrated circuits and the like.
The invention provides a high-resolution photoresist composition which comprises the following raw material components in parts by mass: 10-30 parts of phenolic resin, 1-20 parts of photosensitive reinforced resin, 1-3 parts of photosensitizer and 70-100 parts of organic solvent;
wherein the photosensitive reinforced resin is shown in the following chemical structure:
x, y and z are mole fractions of corresponding monomers, x is more than or equal to 0.1 and less than or equal to 0.5, y is more than or equal to 0.1 and less than or equal to 0.3, and x + y + z is equal to 1.
Preferably, the phenolic resin is a novolac;
preferably, the novolac resin is formed by the polycondensation reaction of phenolic compounds of m-cresol and p-cresol and aldehyde compounds of formaldehyde.
Preferably, the weight average molecular weight of the phenolic novolac resin is 2000-30000.
Preferably, the photosensitive reinforced resin is prepared by an esterification reaction between a polymer shown in formula 2 and 2-diazo-1-naphthoquinone-5-sulfonyl chloride, wherein the polymer shown in formula 2 has the following chemical structure:
x, y and z are mole fractions of corresponding monomers, x is more than or equal to 0.1 and less than or equal to 0.5, y is more than or equal to 0.1 and less than or equal to 0.3, and x + y + z is equal to 1.
Preferably, the amount ratio of the polymer shown in the formula 2 to the 2-diazo-1-naphthoquinone-5-sulfonyl chloride is 2-6: 1.
Preferably, the photosensitizer is an esterified product of 2, 3, 4, 4' -tetrahydroxybenzophenone and 2, 1, 5-diazo naphthoquinone sulfonyl chloride or an esterified product of 2, 2', 4, 4' -tetrahydroxybenzophenone and 2, 1, 5-diazo naphthoquinone sulfonyl chloride.
Preferably, the organic solvent is at least one of ethyl lactate, ethyl acetate, n-butyl acetate, ethylene glycol monomethyl ether, diethylene glycol dimethyl ether, propylene glycol methyl ether acetate, propylene glycol monomethyl ether or diethylene glycol monomethyl ether.
Preferably, the photosensitive photoresist composition further includes at least one of a leveling agent, a colorant, a plasticizer, or a surfactant.
The invention also provides an application of the photosensitive photoresist composition in a photoetching process.
The photosensitive enhanced resin is introduced into the formula, the diazonaphthoquinone group is grafted on the polyhydroxystyrene copolymer, and the diazonaphthoquinone group can form a hydrogen bond with the hydroxyl of the phenolic resin, so that the compatibility of the photosensitive enhanced resin and the phenolic resin is enhanced. Therefore, the introduction of the photosensitive reinforcing resin in the invention improves the dissolution rate contrast of the exposed area and the non-exposed area, and finally effectively improves the resolution.
Detailed Description
Hereinafter, the technical solution of the present invention will be described in detail by specific examples, but these examples should be explicitly proposed for illustration, but should not be construed as limiting the scope of the present invention.
Example 1
A high-resolution photoresist composition comprises the following raw material components by weight: 15g of phenolic resin, 5g of photosensitive reinforced resin, 2g of 2, 3, 4, 4' -tetrahydroxybenzophenone-1, 2-diazonaphthoquinone-5-sulfonate and 85g of propylene glycol methyl ether acetate;
the phenolic resin is linear phenolic resin, and is synthesized by the following method: adding 30g of m-cresol, 30g of p-phenol and 0.2g of oxalic acid into a reaction kettle, uniformly mixing, adding 10g of formalin solution (36.9 wt%) under the protection of nitrogen, heating to 40 ℃ for reaction for 1 hour, continuously heating to 100 ℃ for reaction for 2 hours, then adding 20g of formalin solution (36.9 wt%) and 0.2g of oxalic acid, continuously reacting at 100 ℃ for 5 hours, and distilling to remove water and unreacted monomers to obtain the linear phenolic resin;
the photosensitive reinforced resin is synthesized by adopting the following method: dissolving 20g of 4-acetoxystyrene, 5g of tert-butyl acrylate and 16g of styrene in 300mL of tetrahydrofuran, adding 0.8g of azobisisobutyronitrile AIBN under the protection of nitrogen, heating to 40 ℃ for reaction for 0.5h, continuously heating to reflux for reaction for 10h, cooling to room temperature after the reaction is finished, adding a reaction solution into a large amount of hexane for precipitation, washing the obtained precipitate, drying, adding 150mL of methanol, adding 30mL of ammonia water solution (30%), stirring for complete dissolution, adding the obtained solution into 1L of water for precipitation, washing the obtained precipitate, and drying to obtain the polymer shown in formula 2; dissolving the polymer shown as the formula 2 in dioxane, adding 10g of 2-diazo-1-naphthoquinone-5-sulfonyl chloride, stirring and dissolving completely, slowly dropwise adding 4g of triethylamine, stirring and reacting for 1h, adding the obtained reaction solution into 1L of water for precipitation, washing the obtained precipitate, and drying to obtain the polymer shown as the formula 1, namely the photosensitive reinforced resin.
Example 2
A high-resolution photoresist composition comprises the following raw material components by weight: 10g of phenolic resin, 20g of photosensitive reinforced resin, 1g of 2, 3, 4, 4' -tetrahydroxybenzophenone-1, 2-diazonaphthoquinone-5-sulfonate, 30g of ethyl lactate and 70g of propylene glycol monomethyl ether;
the phenolic resin is linear phenolic resin, and is synthesized by the following method: adding 40g of m-cresol, 20g of p-phenol and 0.2g of oxalic acid into a reaction kettle, uniformly mixing, adding 10g of formalin solution (36.9 wt%) under the protection of nitrogen, heating to 40 ℃ for reaction for 1 hour, continuously heating to 100 ℃ for reaction for 2 hours, then adding 20g of formalin solution (36.9 wt%) and 0.2g of oxalic acid, continuously reacting at 100 ℃ for 5 hours, and distilling to remove water and unreacted monomers to obtain the linear phenolic resin;
the photosensitive reinforced resin is synthesized by adopting the following method: dissolving 20g of 4-acetoxystyrene, 5g of tert-butyl acrylate and 16g of styrene in 300mL of tetrahydrofuran, adding 0.8g of azobisisobutyronitrile AIBN under the protection of nitrogen, heating to 40 ℃ for reaction for 0.5h, continuously heating to reflux for reaction for 10h, cooling to room temperature after the reaction is finished, adding a reaction solution into a large amount of hexane for precipitation, washing and drying the obtained precipitate, adding 150mL of methanol, adding 30mL of ammonia water solution (30%) for ammonolysis, stirring to dissolve completely, adding the obtained solution into 1L of water for precipitation, washing the obtained precipitate, and drying to obtain the polymer shown in formula 2; dissolving the polymer shown as the formula 2 in dioxane, adding 7g of 2-diazo-1-naphthoquinone-5-sulfonyl chloride, stirring and dissolving completely, slowly dropwise adding 3g of triethylamine, stirring and reacting for 1h, adding the obtained reaction solution into 1L of water for precipitation, washing the obtained precipitate, and drying to obtain the polymer shown as the formula 1, namely the photosensitive reinforced resin.
Example 3
A photosensitive photoresist composition comprises the following raw material components in parts by weight: 30g of phenolic resin, 1g of photosensitive reinforced resin, 3g of 2, 3, 4, 4' -tetrahydroxybenzophenone-1, 2-diazonaphthoquinone-5-sulfonate and 70g of propylene glycol methyl ether acetate;
the phenolic resin is linear phenolic resin, and is synthesized by the following method: adding 30g of m-cresol, 30g of p-phenol and 0.2g of oxalic acid into a reaction kettle, uniformly mixing, adding 10g of formalin solution (36.9 wt%) under the protection of nitrogen, heating to 40 ℃ for reaction for 1 hour, continuously heating to 100 ℃ for reaction for 2 hours, then adding 20g of formalin solution (36.9 wt%) and 0.2g of oxalic acid, continuously reacting at 100 ℃ for 5 hours, and distilling to remove water and unreacted monomers to obtain the linear phenolic resin;
the photosensitive reinforced resin is synthesized by adopting the following method: dissolving 20g of 4-acetoxystyrene, 5g of tert-butyl acrylate and 16g of styrene in 300mL of tetrahydrofuran, adding 0.8g of azobisisobutyronitrile AIBN under the protection of nitrogen, heating to 40 ℃ for reaction for 0.5h, continuously heating to reflux for reaction for 10h, cooling to room temperature after the reaction is finished, adding a reaction solution into a large amount of hexane for precipitation, washing and drying the obtained precipitate, adding 150mL of methanol, adding 30mL of ammonia water solution (30%) for ammonolysis, stirring to dissolve completely, adding the obtained solution into 1L of water for precipitation, washing the obtained precipitate, and drying to obtain the polymer shown in formula 2; dissolving the polymer shown as the formula 2 in dioxane, adding 20g of 2-diazo-1-naphthoquinone-5-sulfonyl chloride, stirring and dissolving completely, slowly dropwise adding 5g of triethylamine, stirring and reacting for 1h, adding the obtained reaction solution into 1L of water for precipitation, washing the obtained precipitate, and drying to obtain the polymer shown as the formula 1, namely the photosensitive reinforced resin.
Example 4
A high-resolution photoresist composition comprises the following raw material components by weight: 15g of phenolic resin, 5g of photosensitive reinforced resin, 2g of 2, 3, 4, 4' -tetrahydroxybenzophenone-1, 2-diazonaphthoquinone-5-sulfonate and 85g of propylene glycol methyl ether acetate;
the phenolic resin is linear phenolic resin, and is synthesized by the following method: adding 30g of m-cresol, 30g of p-phenol and 0.2g of oxalic acid into a reaction kettle, uniformly mixing, adding 10g of formalin solution (36.9 wt%) under the protection of nitrogen, heating to 40 ℃ for reaction for 1 hour, continuously heating to 100 ℃ for reaction for 2 hours, then adding 20g of formalin solution (36.9 wt%) and 0.2g of oxalic acid, continuously reacting at 100 ℃ for 5 hours, and distilling to remove water and unreacted monomers to obtain the linear phenolic resin;
the photosensitive reinforced resin is synthesized by adopting the following method: dissolving 15g of 4-acetoxystyrene, 8g of tert-butyl acrylate and 18g of styrene in 300mL of tetrahydrofuran, adding 0.8g of azobisisobutyronitrile AIBN under the protection of nitrogen, heating to 40 ℃ for reaction for 0.5h, continuously heating to reflux for reaction for 10h, cooling to room temperature after the reaction is finished, adding a reaction solution into a large amount of hexane for precipitation, washing the obtained precipitate, drying, adding 150mL of methanol, adding 30mL of ammonia water solution (30%), stirring for complete dissolution, adding the obtained solution into 1L of water for precipitation, washing the obtained precipitate, and drying to obtain the polymer shown in formula 2; dissolving the polymer shown as the formula 2 in dioxane, adding 10g of 2-diazo-1-naphthoquinone-5-sulfonyl chloride, stirring and dissolving completely, slowly dropwise adding 4g of triethylamine, stirring and reacting for 1h, adding the obtained reaction solution into 1L of water for precipitation, washing the obtained precipitate, and drying to obtain the polymer shown as the formula 1, namely the photosensitive reinforced resin.
Comparative example 1
A photoresist composition comprises the following raw material components by weight: 15g of phenolic resin, 2g of 2, 3, 4, 4' -tetrahydroxybenzophenone-1, 2-diazonaphthoquinone-5-sulfonate and 85g of propylene glycol methyl ether acetate;
the phenolic resin is linear phenolic resin, and is synthesized by the following method: adding 30g of m-cresol, 30g of p-phenol and 0.2g of oxalic acid into a reaction kettle, uniformly mixing, adding 10g of formalin solution (36.9 wt%) under the protection of nitrogen, heating to 40 ℃ for reaction for 1 hour, continuously heating to 100 ℃ for reaction for 2 hours, then adding 20g of formalin solution (36.9 wt%) and 0.2g of oxalic acid, continuously reacting at 100 ℃ for 5 hours, and distilling to remove water and unreacted monomers to obtain the linear phenolic resin.
Comparative example 2
A photosensitive photoresist composition comprises the following raw material components in parts by weight: 15g of a phenol resin, 5g of a polymer represented by formula 2, 2g of 2, 3, 4, 4' -tetrahydroxybenzophenone-1, 2-diazonaphthoquinone-5-sulfonate, and 85g of propylene glycol methyl ether acetate;
the phenolic resin is linear phenolic resin, and is synthesized by the following method: adding 30g of m-cresol, 30g of p-phenol and 0.2g of oxalic acid into a reaction kettle, uniformly mixing, adding 10g of formalin solution (36.9 wt%) under the protection of nitrogen, heating to 40 ℃ for reaction for 1 hour, continuously heating to 100 ℃ for reaction for 2 hours, then adding 20g of formalin solution (36.9 wt%) and 0.2g of oxalic acid, continuously reacting at 100 ℃ for 5 hours, and distilling to remove water and unreacted monomers to obtain the linear phenolic resin;
the polymer shown in the formula 2 is synthesized by the following method: dissolving 20g of 4-acetoxystyrene, 5g of tert-butyl acrylate and 16g of styrene in 300mL of tetrahydrofuran, adding 0.8g of azobisisobutyronitrile AIBN under the protection of nitrogen, heating to 40 ℃ for reaction for 0.5h, continuously heating to reflux for reaction for 10h, cooling to room temperature after the reaction is finished, adding a reaction solution into a large amount of hexane for precipitation, washing the obtained precipitate, drying, adding 150mL of methanol, adding 30mL of ammonia water solution (30%) for ammonolysis, stirring to dissolve completely, adding the obtained solution into 1L of water for precipitation, washing the obtained precipitate, and drying to obtain the polymer shown in the formula 2.
The photoresist compositions described in examples 1-4 and comparative examples 1-2 were mixed, spin-coated on hexamethyldisilazane HMDS-treated silicon wafers, and the silicon wafers coated with the photoresist compositions were vacuum-dried and then baked at 100 ℃ for 90 seconds to obtain a photoresist layer having a thickness of about 1.0 μm.
And respectively exposing the obtained photoresist layer by using a standard L/S (1: 1) mask plate and a light source of an I line (with the wavelength of 365nm), and then respectively developing the exposed photoresist layer by using a tetramethylammonium hydroxide solution with the mass fraction of 2.38 w% as a developing solution for 60S to obtain a photoresist pattern. And detecting the resolution of the photoresist pattern by using the SEM cross section.
TABLE 1 test results of photoresist compositions obtained corresponding to examples 1-4 and comparative examples 1-2
| Exposure energy (mJ/cm)2) | Resolution (μm) | |
| Example 1 | 55 | 0.35 |
| Example 2 | 70 | 0.45 |
| Example 3 | 60 | 0.45 |
| Example 4 | 55 | 0.35 |
| Comparative example 1 | 80 | 0.8 |
| Comparative example 2 | 105 | 1.5 |
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.
Claims (9)
1. The high-resolution photoresist composition is characterized by comprising the following raw material components in parts by mass: 10-30 parts of phenolic resin, 1-20 parts of photosensitive reinforced resin, 1-3 parts of photosensitizer and 70-100 parts of organic solvent;
wherein the photosensitive reinforced resin is shown in the following chemical structure:
x, y and z are mole fractions of corresponding monomers, x is more than or equal to 0.1 and less than or equal to 0.5, y is more than or equal to 0.1 and less than or equal to 0.3, and x + y + z is equal to 1.
2. The high resolution photoresist composition according to claim 1, wherein the phenolic resin is a novolac resin;
preferably, the novolac resin is formed by the polycondensation reaction of phenolic compounds of m-cresol and p-cresol and aldehyde compounds of formaldehyde.
3. The high resolution photoresist composition according to claim 2, wherein the weight average molecular weight of the novolac resin is 2000-30000.
4. The high resolution photoresist composition according to any one of claims 1 to 3, wherein the photosensitive reinforcing resin is formed by esterification of a polymer represented by formula 2 and 2-diazo-1-naphthoquinone-5-sulfonyl chloride, wherein the polymer represented by formula 2 has the following chemical structure:
x, y and z are mole fractions of corresponding monomers, x is more than or equal to 0.1 and less than or equal to 0.5, y is more than or equal to 0.1 and less than or equal to 0.3, and x + y + z is equal to 1.
5. The high resolution photoresist composition according to claim 4, wherein the mass ratio of the polymer represented by formula 2 to 2-diazo-1-naphthoquinone-5-sulfonyl chloride is 2-6: 1.
6. The high resolution photoresist composition according to any one of claims 1 to 5, wherein the photosensitizer is an esterified product of 2, 3, 4, 4' -tetrahydroxybenzophenone and 2, 1, 5-diazonaphthoquinone sulfonyl chloride or an esterified product of 2, 2', 4, 4' -tetrahydroxybenzophenone and 2, 1, 5-diazonaphthoquinone sulfonyl chloride.
7. The high resolution photoresist composition according to any one of claims 1 to 6, wherein the organic solvent is at least one of ethyl lactate, ethyl acetate, n-butyl acetate, ethylene glycol monomethyl ether, diethylene glycol dimethyl ether, propylene glycol methyl ether acetate, propylene glycol monomethyl ether, or diethylene glycol monomethyl ether.
8. The high resolution photoresist composition according to any one of claims 1 to 7, wherein the photosensitive photoresist composition further comprises at least one of a leveling agent, a colorant, a plasticizer, or a surfactant.
9. Use of a high resolution photoresist composition according to any one of claims 1 to 8 in a photolithographic process.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114153123A (en) * | 2021-12-10 | 2022-03-08 | 中国科学院光电技术研究所 | Photoresist composition and application thereof |
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| GB1494043A (en) * | 1974-02-21 | 1977-12-07 | Fuji Photo Film Co Ltd | Photosensitive lithographic printing plate precursors |
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| US6365321B1 (en) * | 1999-04-13 | 2002-04-02 | International Business Machines Corporation | Blends of hydroxystyrene polymers for use in chemically amplified positive resist formulations |
| US20070020558A1 (en) * | 2004-12-23 | 2007-01-25 | Wolfgang Zahn | Process for the preparation of a photoresist solution |
| CN101305321A (en) * | 2005-11-10 | 2008-11-12 | Az电子材料美国公司 | Developable undercoating composition for thick photoresist layers |
| CN107797384A (en) * | 2016-09-07 | 2018-03-13 | 上海飞凯电子材料有限公司 | A kind of photosensitive resin, positive photoresist and application |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| GB1494043A (en) * | 1974-02-21 | 1977-12-07 | Fuji Photo Film Co Ltd | Photosensitive lithographic printing plate precursors |
| JPH1097066A (en) * | 1996-09-19 | 1998-04-14 | Shin Etsu Chem Co Ltd | Positive resist composition for lift-off process and pattern forming method |
| JPH1130857A (en) * | 1997-07-10 | 1999-02-02 | Mitsubishi Chem Corp | Positive radiation sensitive resin composition |
| US6365321B1 (en) * | 1999-04-13 | 2002-04-02 | International Business Machines Corporation | Blends of hydroxystyrene polymers for use in chemically amplified positive resist formulations |
| US20070020558A1 (en) * | 2004-12-23 | 2007-01-25 | Wolfgang Zahn | Process for the preparation of a photoresist solution |
| CN101305321A (en) * | 2005-11-10 | 2008-11-12 | Az电子材料美国公司 | Developable undercoating composition for thick photoresist layers |
| CN107797384A (en) * | 2016-09-07 | 2018-03-13 | 上海飞凯电子材料有限公司 | A kind of photosensitive resin, positive photoresist and application |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114153123A (en) * | 2021-12-10 | 2022-03-08 | 中国科学院光电技术研究所 | Photoresist composition and application thereof |
| CN114153123B (en) * | 2021-12-10 | 2023-09-19 | 中国科学院光电技术研究所 | Photoresist composition and application thereof |
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