CN112645280A - Processing technology of radio frequency switch - Google Patents
Processing technology of radio frequency switch Download PDFInfo
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- CN112645280A CN112645280A CN202011611716.7A CN202011611716A CN112645280A CN 112645280 A CN112645280 A CN 112645280A CN 202011611716 A CN202011611716 A CN 202011611716A CN 112645280 A CN112645280 A CN 112645280A
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- sliding
- radio frequency
- frequency switch
- elastic
- substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/0015—Cantilevers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
- B81C1/0038—Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00531—Dry etching
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/008—Aspects related to assembling from individually processed components, not covered by groups B81C3/001 - B81C3/002
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0102—Surface micromachining
- B81C2201/0105—Sacrificial layer
- B81C2201/0108—Sacrificial polymer, ashing of organics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0089—Providing protection of elements to be released by etching of sacrificial element; Avoiding stiction problems, e.g. of movable element to substrate
Abstract
The invention provides a processing technology of a radio frequency switch, which comprises the following steps: providing a substrate, transferring a sliding part, arranging a fixed adhesive layer, forming an elastic part and releasing the elastic part, arranging the fixed adhesive layer on the atomic-level flat surface, and covering the atomic-level flat surface and the sliding part with the fixed adhesive layer; etching a groove for forming the elastic piece on the fixed glue layer, and filling elastic piece materials into the groove to form the elastic piece; and removing the fixing adhesive layer and releasing the elastic piece. The processing technology of the radio frequency switch provided by the invention can process the radio frequency switch with the elastic part, the elastic part is positioned on one side of the sliding part, the movement of the sliding part can be limited, the problems of impact and collision caused by too high sliding speed are avoided, the surface flatness of the substrate cannot be damaged in the production and processing processes of the elastic part, and a simple spring-mass vibrator system can be formed between the sliding part and the elastic part in the radio frequency switch.
Description
Technical Field
The invention belongs to the field of MEMS (micro-electromechanical systems) devices, and particularly relates to a processing technology of a radio frequency switch.
Background
Compared with the traditional semiconductor switch, the RF MEMS RF switch has excellent RF characteristics such as high linearity, low loss, and high isolation due to the fact that the on/off of the RF signal is controlled by mechanical switching, and is gradually becoming the mainstream scheme of the future RF switch, and has the potential to become one of the key technologies of advanced electronic equipment in national defense and civil fields such as next-generation mobile communication terminals and systems, satellite communication systems, and high-performance phased array radars.
At present, the engineering application of the RF MEMS radio frequency switch is demanded, but the large-scale popularization and application are really needed, and the performance indexes of the device, such as reliability, service life and the like, need to be greatly improved. At present, the problem of reliability of the RF MEMS switch is mainly solved by the structural ultra-smooth technology, for example, chinese patent application No. CN111884644A discloses a parallel RF-MEMS switch, but because there is no friction force and the driving force of voltage is large, during the switching process of the RF switch, the sliding speed of the sliding component is fast, and there is a problem of impact and collision, so that a buffer element needs to be arranged for buffering, but the arrangement of the buffer element may affect the flatness of the substrate surface, so a processing technology is needed to process the buffer element without affecting the flatness of the substrate surface.
Disclosure of Invention
The invention aims to provide a processing technology of a radio frequency switch, which aims to solve the technical problem of how to process a buffer element without influencing the surface smoothness of a substrate.
In order to achieve the purpose, the invention adopts the technical scheme that: the processing technology of the radio frequency switch comprises the following steps:
providing a substrate, wherein at least one surface of the substrate is provided with an atomic-scale flat surface;
a transfer sliding member for transferring the sliding member to the atomic-scale flat surface;
arranging a fixed adhesive layer, wherein the fixed adhesive layer is arranged on the atomic-scale flat surface and covers the atomic-scale flat surface and the sliding component;
forming an elastic part, etching a groove on the fixed glue layer, and filling elastic part materials into the groove to form the elastic part;
and releasing the elastic piece, removing the fixed glue layer and releasing the elastic piece.
Further, the elastic piece is a spring, and the elastic piece is made of a metal material.
Further, the groove includes a first fixing region on the sliding member, a second fixing region outside a sliding region of the sliding member, and a connecting region connecting the first fixing region and the second fixing region, a bottom surface of the connecting region being higher than an upper surface of the base.
Further, the groove of the first fixing section extends to the slide member, and the groove of the second fixing section extends to the base.
Further, the shape of the connection region is a meander shape, a spiral shape, a wave shape, or an arch shape.
Further, the number of the second fixing areas and the number of the connecting areas are at least two, and the at least two second fixing areas and the at least two connecting areas are respectively located on two opposite sides of the sliding component.
Furthermore, the sliding part comprises a super-sliding sheet and a medium layer arranged on the super-sliding sheet, the super-sliding sheet is in super-sliding contact with the substrate, and the first fixing area is located above the medium layer.
Further, the cross-sectional area of the first fixing region is smaller than or equal to the cross-sectional area of the dielectric layer.
Further, the substrate comprises an insulating layer, and the surface of the insulating layer is an atomically flat surface.
Further, in the step of releasing the elastic member, the fixing adhesive layer is removed by a wet method, and the radio frequency switch is dried.
The processing technology of the radio frequency switch provided by the invention has the beneficial effects that:
1. the radio frequency switch with the elastic piece can be processed, the elastic piece is located on one side of the sliding part and can limit the movement of the sliding part, the problems of impact and collision caused by too high sliding speed are avoided, the surface flatness of the substrate cannot be damaged in the production and processing processes of the elastic piece, and a simple spring-mass vibrator system can be formed between the sliding part and the elastic piece in the radio frequency switch.
2. The suspended elastic piece is processed, the lower surface of the elastic piece is higher than the substrate, and the elastic piece cannot be contacted with the substrate in the moving process, so that scratch and rub of the substrate caused by the movement of the elastic piece can be avoided, and the flatness of the surface of the substrate is influenced. The ultra-sliding sheet is in ultra-sliding contact with the substrate, and the sliding part slides without abrasion, near zero friction and impact when sliding, so that the radio frequency switch can thoroughly avoid impact damage, simultaneously overcomes the problem of adhesion failure caused by van der Waals force, surface tension and the like, and obviously prolongs the operation life of the radio frequency switch.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
Fig. 1 is a schematic step diagram of a process for manufacturing a radio frequency switch according to an embodiment of the present invention;
fig. 2 is a schematic perspective view of the rf switch formed by the process of manufacturing the rf switch shown in fig. 1;
fig. 3 is a partial cross-sectional view of a process-shaped rf switch of the rf switch provided in fig. 1.
Wherein, in the figures, the respective reference numerals:
1. a substrate; 2. a sliding member; 3. fixing the adhesive layer; 4. a groove; 5. an elastic member; 11. an insulating layer; 12. a drive member; 21. a superclipper sheet; 22. a dielectric layer; 41. a first fixing region; 42. a second fixation area; 43. a connecting region.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element.
It will be understood that the terms "length," "width," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like, as used herein, refer to an orientation or positional relationship indicated in the drawings that is solely for the purpose of facilitating the description and simplifying the description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and is therefore not to be construed as limiting the invention.
Because the ultra-slip of a large scale cannot be realized for a long time, the phenomenon that the friction coefficient is in the order of thousandth or lower is often called as ultra-slip in documents for over ten years; the phenomenon that the initial friction and wear caused by the non-degree-of-concentricity contact are almost zero is called 'structural lubrication', and the 'ultra-lubricity' referred to in the invention refers to the phenomenon that the friction and wear caused by the non-degree-of-concentricity contact are almost zero.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
Referring to fig. 1 to 3, a process of manufacturing the rf switch according to the present invention will now be described. The processing technology of the radio frequency switch comprises the following steps:
s1, providing a substrate 1, wherein the substrate 1 generally comprises a high-resistance silicon substrate 1 and an insulating layer 11 arranged on the upper surface of the high-resistance silicon substrate 1, the upper surface of the insulating layer 11 is provided with an atomic-level flat surface, ultra-sliding contact is adopted between the ultra-sliding sheet 21 and the insulating layer 11, the ultra-sliding sheet 21 slides without abrasion, near-zero friction and impact when sliding, the radio frequency switch can thoroughly avoid impact damage, and meanwhile, the problem of adhesion failure caused by van der Waals force, surface tension and the like is solved, and the service life of the radio frequency switch is remarkably prolonged.
The inside of the substrate 1 is further provided with a driving part 12, the driving part 12 is used for driving the sliding part 2 to horizontally slide on the surface of the substrate 1, and the driving mode is electrostatic driving. Preferably, the driving member 12 includes at least two electrodes and a signal line connected to the electrodes, and when a dc bias is applied between the ground line and the signal line, the sliding member 2 slides to overlap the signal line under the action of a horizontal electrostatic force, so as to control the change of the coupling capacitance between the ground line and the signal line, and thus, the on/off of the rf signal is realized.
S2, providing slide part 2, slide part 2 includes super sliding piece 21 and locates dielectric layer 22 on the super sliding piece 21, super sliding piece 21 locates on the basement 1, super sliding piece 21 with basement 1 constitutes super sliding pair, dielectric layer 22 locates super sliding piece 21 ' S surface, and super sliding piece 21 generally adopts HOPG super sliding piece 21, adopts dielectric layer 22 to form the island lid at super sliding piece 21 ' S top surface, can realize bottom drive component 12 ' S electrostatic drive.
S3, the ultra-sliding sheet 21 is transferred to a specific position of the substrate 1 by a probe and a nanometer micro-mechanical control hand, and the specific position is generally on the surface of the insulating layer 11, so that an ultra-sliding contact surface can be formed.
S4, a fixed glue layer 3 is arranged on the atomic level plane, the fixed glue layer 3 can generally select glue such as photoresist or epoxy resin glue, the coating mode can directly adopt a spraying mode, the fixed glue layer 3 can completely cover the insulating layer 11 and the sliding part 2, the position of the sliding part 2 can be limited through the fixed glue layer 3, and meanwhile, the subsequent forming step of the elastic part 5 can be prevented from influencing the flatness of the surface of the substrate 1.
S5, the recess 4 that is used for forming elastic component 5 is formed in the etching on the fixed glue film 3, and recess 4 is including being located first fixed area 41 on the sliding part 2, being located second fixed area 42 and the connection of the regional outside of sliding part 2 first fixed area 41 with the joining region 43 of second fixed area 42, the groove depth of joining region 43 is located the top of basement 1, can make the elastic component 5 that takes shape this moment be unsettled elastic component 5, and the lower surface of elastic component 5 is higher than basement 1, and elastic component 5 can not contact with basement 1 in the in-process of moving, can avoid elastic component 5' S motion to cause the scratch to basement 1 to influence the planarization on basement 1 surface.
Preferably, the fixed glue layer 3 can directly select photoresist, and the photoresist can be directly used for photoetching development process on the top surface, so that the groove 4 is formed, the processing mode of the groove 4 is simpler, and more materials cannot be wasted.
Preferably, the first fixing area 41 has a groove as deep as the sliding component 2, i.e. one end of the elastic element 5 can be directly fixed on the sliding component 2; the groove of the second fixing area 42 is deep to the substrate 1, that is, the other end of the elastic element 5 can be directly fixed on the substrate 1, so that the elastic element 5 can play a role of buffering when the sliding component 2 slides and switches on and off of the radio frequency switch, the sliding position of the sliding component 2 is limited, the sliding component is prevented from exceeding a driving area when sliding, impact and collision of the sliding component 2 during movement can be avoided, and the reliability of the whole radio frequency switch is improved.
Preferably, the cross-sectional area of the first fixing region 41 is smaller than or equal to the cross-sectional area of the dielectric layer 22, that is, the size of the groove 4 at the top of the dielectric layer 22 does not exceed the size of the dielectric layer 22, so that the metal of the later deposition process can be prevented from being deposited on the substrate 1 or the super-slip sheet 21, and the super-slip performance of the substrate can be prevented from being affected.
Preferably, the elastic members 5 are formed on two opposite sides of the sliding member 2, the number of the elastic members 5 on one side may be two, and the two elastic members 5 respectively act on two sides of the sliding member 2, so that the balance of the acting force on the sliding member 2 can be ensured.
S6, filling the material of the elastic member 5 into the groove 4 to form the elastic member 5. Preferably, the elastic member 5 is a micro spring, the material of which is generally an elastic metal material, such as nickel, beryllium copper, nickel-titanium alloy, etc., and the middle portion of the elastic member 5 generally needs to be bent into a shape with elasticity, such as a bent shape, a spiral shape, a wave shape, or a bow shape, i.e., the shape of the connection region 43 of the groove 4 also needs to correspond to the bent shape, the spiral shape, the wave shape, or the bow shape.
And S7, removing all the fixing adhesive layers 3 surrounding the sliding part 2 and the two sides of the elastic part 5 without affecting the surface smoothness of the substrate 1, and releasing the sliding part 2 and the elastic part 5, namely forming the sliding part 2 with the elastic part 5 on one side.
Preferably, the removal of the fixed glue layer 3 is generally performed by wet removal, for example, by etching the fixed glue layer 3 with BOE solution, and then using a carbon dioxide supercritical drying device. Of course, the removal of the solid glue layer may also be performed by ion implantation or the like to remove the photoresist, which is not limited herein.
The radio frequency switch with the elastic piece 5 can be processed in the process, the elastic piece 5 is located on one side of the sliding part 2, the movement of the sliding part 2 can be limited, the problem that the sliding speed is too high to cause impact and collision is avoided, the surface flatness of the substrate 1 cannot be damaged in the production and processing processes of the elastic piece 5, the forming process of the micro spring and the forming process of the ultra-sliding pair are combined, interference and influence cannot be caused between the micro spring and the ultra-sliding pair, the whole processing process is simple, and the success rate is high.
The driving member 12 can be driven in other ways according to actual conditions and specific requirements, and the driving member 12 can also be disposed outside the substrate 1 or independently from the rf device, and is not limited in this respect.
According to the actual situation and the specific requirement, in other embodiments of the present invention, the elastic member 5 may also be made of an elastic material such as rubber or plastic, and the shape of the connecting region 43 may not be particularly limited, but may directly use the elastic property of the elastic material itself, and is not limited herein.
According to practical conditions and specific requirements, in other embodiments of the present invention, it is also possible to provide the recess 4 without the second fixing region 42, only with the first fixing region 41 and the connection region 43, the connection region 43 and another fixing means realizing a fixed connection, which is not limited herein.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. The processing technology of the radio frequency switch comprises the following steps:
providing a substrate, wherein at least one surface of the substrate is provided with an atomic-scale flat surface;
a transfer sliding member for transferring the sliding member to the atomic-scale flat surface;
it is characterized by also comprising the following steps:
arranging a fixed adhesive layer, wherein the fixed adhesive layer is arranged on the atomic-scale flat surface and covers the atomic-scale flat surface and the sliding component;
forming an elastic part, etching a groove on the fixed glue layer, and filling elastic part materials into the groove to form the elastic part;
and releasing the elastic piece, removing the fixed glue layer and releasing the elastic piece.
2. The process of claim 1, wherein: the elastic piece is a spring, and the elastic piece is made of a metal material.
3. The process of claim 1, wherein: the groove comprises a first fixing area positioned on the sliding component, a second fixing area positioned outside the sliding area of the sliding component and a connecting area connecting the first fixing area and the second fixing area, and the bottom surface of the connecting area is higher than the upper surface of the substrate.
4. A process for manufacturing a radio frequency switch according to claim 3, wherein: the groove of the first fixing section extends to the slide member and the groove of the second fixing section extends to the base.
5. A process for manufacturing a radio frequency switch according to claim 3, wherein: the shape of the connecting region is a bent shape, a spiral shape, a wave shape or an arch shape.
6. A process for manufacturing a radio frequency switch according to any one of claims 3 to 5, wherein: the number of the second fixing areas and the number of the connecting areas are at least two, and the at least two second fixing areas and the at least two connecting areas are respectively positioned on two opposite sides of the sliding component.
7. A process for manufacturing a radio frequency switch according to any one of claims 3 to 5, wherein: the sliding part comprises a super-sliding sheet and a medium layer arranged on the super-sliding sheet, the super-sliding sheet is in super-sliding contact with the substrate, and the first fixing area is located above the medium layer.
8. The process of claim 7, wherein: the cross-sectional area of the first fixing region is smaller than or equal to that of the dielectric layer.
9. The process for manufacturing a radio frequency switch according to any one of claims 1 to 8, wherein: the substrate comprises an insulating layer, and the surface of the insulating layer is an atomic-level flat surface.
10. The process for manufacturing a radio frequency switch according to any one of claims 1 to 8, wherein: and in the step of releasing the elastic piece, removing the fixed adhesive layer by adopting a wet method, and drying the radio frequency switch.
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| CN202011611716.7A CN112645280A (en) | 2020-12-30 | 2020-12-30 | Processing technology of radio frequency switch |
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| CN202011611716.7A CN112645280A (en) | 2020-12-30 | 2020-12-30 | Processing technology of radio frequency switch |
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Cited By (2)
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| CN113584456A (en) * | 2021-07-21 | 2021-11-02 | 深圳清华大学研究院 | Ultra-smooth framework and processing method thereof |
| WO2023000224A1 (en) * | 2021-07-21 | 2023-01-26 | 深圳清华大学研究院 | Super-smooth skeleton having buried electrodes and production method therefor |
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| WO2023000224A1 (en) * | 2021-07-21 | 2023-01-26 | 深圳清华大学研究院 | Super-smooth skeleton having buried electrodes and production method therefor |
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