CN112636146B - High-power mode-locked disc laser - Google Patents
High-power mode-locked disc laser Download PDFInfo
- Publication number
- CN112636146B CN112636146B CN202011383586.6A CN202011383586A CN112636146B CN 112636146 B CN112636146 B CN 112636146B CN 202011383586 A CN202011383586 A CN 202011383586A CN 112636146 B CN112636146 B CN 112636146B
- Authority
- CN
- China
- Prior art keywords
- laser
- concave
- disc
- gain medium
- mirror
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000008878 coupling Effects 0.000 claims abstract description 18
- 238000010168 coupling process Methods 0.000 claims abstract description 18
- 238000005859 coupling reaction Methods 0.000 claims abstract description 18
- 238000007493 shaping process Methods 0.000 claims abstract description 10
- 238000005086 pumping Methods 0.000 claims description 6
- 238000002310 reflectometry Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 230000000694 effects Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 4
- 230000000875 corresponding effect Effects 0.000 description 3
- 230000005374 Kerr effect Effects 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000012994 industrial processing Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/0405—Conductive cooling, e.g. by heat sinks or thermo-electric elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/042—Arrangements for thermal management for solid state lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
- H01S3/0813—Configuration of resonator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1106—Mode locking
- H01S3/1112—Passive mode locking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
Abstract
The invention discloses a high-power mode-locked disc laser in the technical field of lasers, which has the characteristics of high average power, simple structure, good system stability and the like. The disc laser gain medium, the first concave reflector, the second concave reflector and the output end coupling mirror form a mode locking laser resonant cavity, and the Kerr medium and the diaphragm are arranged in the mode locking laser resonant cavity; the Kerr medium is positioned between the first concave reflecting mirror and the second concave reflecting mirror, and the first concave reflecting mirror and the second concave reflecting mirror form a focusing cavity structure; the pump light emitted by the pump source passes through the pump light shaping system to make multiple round trips on the disc laser gain medium, so that the pump light is fully absorbed by the disc laser gain medium; laser generated by the disc laser gain medium sequentially passes through the first concave reflector, the Kerr medium, the second concave reflector, the diaphragm and the output end coupling mirror to realize laser output.
Description
Technical Field
The invention belongs to the technical field of lasers, and particularly relates to a high-power mode-locked disc laser.
Background
Ultrashort pulse laser generally refers to a pulse laser source with pulse width on the order of picoseconds and femtoseconds, and has the characteristics of extremely narrow pulse, extremely wide spectrum, extremely high peak power and the like. The rapid development of ultrashort pulse laser technology in recent years brings a series of innovations to other relevant disciplines and industrial fields, and greatly promotes the progress of numerous disciplines and fields represented by precision metering, ultrafast chemistry, biomedicine, industrial processing and the like.
The mode locking technology is one of the most direct and effective means for generating ultrashort pulse laser at present, can generate stable and reliable Fourier transform limit pulse, has high light-light transform efficiency, compact structure and easy integration, has good frequency stability, power stability and beam quality close to space diffraction limit, has very important application value when the mode locking technology is used for directly generating ultrashort pulse, especially high-power ultrashort pulse, and is always a hotspot in the field of ultrashort laser. Currently, semiconductor saturable absorber mirror (SESAM) mode locking and kerr lens mode locking are the two most dominant mode locking techniques for generating ultrashort pulses. SESAM mode locking can realize picosecond and femtosecond magnitude laser output, but Q-switching instability easily occurs under high-power laser operation, so that the mode locking is unstable, and the SESAM is damaged; in addition, the specific quantum well structure and material characteristics of the SESAM element cause the limited working bandwidth and the relatively slow saturation absorption recovery time, so that the generation of ultrashort femtosecond pulses is limited to a certain extent; meanwhile, the preparation of SESAM requires a molecular beam epitaxial growth technology, and the preparation process is complex and high in cost, which brings inconvenience to the wide application and parameter adjustment. The Kerr lens mode locking is to form nonlinear loss modulation in a laser cavity by utilizing the Kerr self-focusing effect of a medium, and the nonlinear loss modulation is irrelevant to the working wavelength of the medium, so that extremely wide working bandwidth can be realized; in addition, the response time of the nonlinear kerr effect is usually only about a few femtoseconds, the nonlinear kerr effect has the property of a 'fast' saturated absorber, can support laser pulse output smaller than hundred femtoseconds, and meanwhile, compared with SESAM mode locking, the damage threshold of bulk kerr medium material is very high, so that the kerr lens mode locking is more suitable for generating high-power ultrashort mode locking pulses.
Titanium sapphire ultrafast lasers and semiconductor Laser (LD) end-pumped solid ultrafast lasers have been capable of producing ultrashort pulse outputs from the periodic order to hundreds of femtoseconds using kerr lens mode-locking techniques. However, in the traditional X-type or Z-type kerr lens mode-locked laser, the laser gain medium has two functions of the gain medium and the kerr medium, in order to ensure the realization of the kerr lens mode locking, the laser gain medium is not only required to have a high nonlinear refractive index coefficient, but also the size of the laser mode in the gain medium is reduced as much as possible when the resonant cavity is designed, so that the laser gain medium can provide a strong enough self-amplitude modulation effect to realize the ultra-short pulse output of the kerr lens mode locking; but the smaller lasing mode in the laser gain medium makes it difficult to support the generation of high average power ultrashort pulse lasers.
Disclosure of Invention
In order to solve the defects in the prior art, the invention provides a high-power mode-locked disc laser which has the characteristics of high average power, simple structure, good system stability and the like.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows: a high-power mode-locked disk laser comprises a pumping source, a pumping light shaping system, a disk laser gain medium, a first concave reflector, a Kerr medium, a second concave reflector, a diaphragm and an output end coupling mirror; the disk laser gain medium, the first concave reflector, the second concave reflector and the output end coupling mirror form a mode locking laser resonant cavity, and the Kerr medium and the diaphragm are all arranged in the mode locking laser resonant cavity; the Kerr medium is positioned between the first concave reflecting mirror and the second concave reflecting mirror, and the first concave reflecting mirror and the second concave reflecting mirror form a focusing cavity structure; laser generated by the disc laser gain medium sequentially passes through the first concave reflector, the Kerr medium, the second concave reflector, the diaphragm and the output end coupling mirror to realize laser output.
Further, the pump source is a semiconductor laser.
Further, the pump light shaping system comprises a plurality of collimating lenses and reflecting mirrors, the collimating lenses and the reflecting mirrors are arranged in the light path between the pump source and the disc laser gain medium according to a set rule, and pump light passes through the pump light shaping system to make multiple round trips on the disc laser gain medium, so that the pump light is fully absorbed by the disc laser gain medium.
Further, the disc laser gain medium is a laser crystal, a laser ceramic or a glass, and a heat sink is arranged at one side of the back surface of the disc laser gain medium.
Further, the Kerr medium is arranged at the focus of a focusing cavity formed by the first concave reflecting mirror and the second concave reflecting mirror at the Brewster angle.
Further, the concave surfaces of the first concave reflecting mirror and the second concave reflecting mirror are plated with high-reflectivity dielectric films which are high in reflectivity to laser light.
Further, the mode-locked laser resonant cavity is an X-shaped or Z-shaped laser resonant cavity.
Further, the diaphragm is an aperture positioned in front of the output coupling mirror.
Further, one surface of the output end coupling mirror facing the mode locking laser resonant cavity is plated with a dielectric film which is partially transmitted by laser.
Compared with the prior art, the invention has the beneficial effects that:
(1) The invention uses the disc laser gain medium as the active reflection end mirror, separates the laser gain medium and Kerr medium of the traditional four-mirror mode-locked laser, introduces the independent Kerr medium, ensures the smaller laser mode field in the Kerr medium to generate enough self-amplitude modulation effect to realize Kerr lens mode locking, and simultaneously realizes the proper large laser mode field in the disc gain medium, thereby being capable of generating high average power mode-locked ultrashort pulse laser output, having simple structure and good system stability;
(2) The disk gain medium can be used as an active reflecting end mirror to realize high-power operation of a laser, the high-power operation can further enhance the self-amplitude modulation effect of Kerr media in a laser resonant cavity, the Q-switching instability of mode locking pulse can be restrained, and stable high-power Kerr lens mode locking laser output can be realized.
Drawings
FIG. 1 is a schematic diagram of an optical path structure of a high-power mode-locked disc laser according to an embodiment of the present invention;
fig. 2 shows the magnitudes of laser modes at different positions in the cavity of a mode-locked laser resonator of a high-power mode-locked disc laser according to an embodiment of the present invention.
Detailed Description
The invention is further described below with reference to the accompanying drawings. The following examples are only for more clearly illustrating the technical aspects of the present invention, and are not intended to limit the scope of the present invention.
As shown in fig. 1, a high-power mode-locked disc laser includes a pump source 1, a pump light shaping system 2, a disc laser gain medium 3, a first concave mirror 4, a kerr medium 5, a second concave mirror 6, a diaphragm 7, and an output end coupling mirror 8; the disc laser gain medium 3, the first concave reflector 4, the second concave reflector 6 and the output end coupling mirror 8 form a mode locking laser resonant cavity, and the Kerr medium 5 and the diaphragm 7 are arranged in the mode locking laser resonant cavity; the Kerr medium 5 is positioned between the first concave reflecting mirror 4 and the second concave reflecting mirror 6, and the first concave reflecting mirror 4 and the second concave reflecting mirror 6 form a focusing cavity structure; the pump light emitted by the pump source 1 passes through the pump light shaping system 2 to and fro on the disc laser gain medium 3 for a plurality of times, so that the pump light is fully absorbed by the disc laser gain medium 3; the laser generated by the disc laser gain medium 3 sequentially passes through the first concave reflecting mirror 4, the Kerr medium 5, the second concave reflecting mirror 6, the diaphragm 7 and the output end coupling mirror 8 to realize laser output.
In this embodiment, the pumping source is an LD semiconductor laser, and the working wavelength is 976 and nm, which is used for pumping the disc laser gain medium 3 to generate laser; the pump light shaping system 2 comprises a plurality of collimating lenses and reflecting mirrors, wherein the collimating lenses and the reflecting mirrors are arranged in an optical path between the pump source 1 and the disc laser gain medium 3 according to a set rule, and mainly serve to collimate pump light and make the pump light enter the disc laser gain medium in a round trip mode for many times so as to increase the round trip times of the pump light in the disc laser gain medium, so that the pump light can be fully absorbed; the disc laser gain medium 3 is a laser crystal, a laser ceramic or a glass, in the embodiment, yb is adopted, a cooling heat sink is arranged on the back side of the YAG laser crystal, and a dielectric film which is highly reflective to pump light and laser light is plated on the surface of the disc laser gain medium 3 close to the heat sink. The disc laser gain medium 3, the first concave reflector 4, the second concave reflector 6 and the output end coupling mirror 8 form a mode locking laser resonant cavity (X cavity or Z cavity); the curvatures of the first concave reflector 4 and the second concave reflector 6 are-100 mm, and the reflecting surfaces (the surface facing the cavity of the mode-locked laser resonant cavity) of the first concave reflector and the second concave reflector are coated with high-reflectivity films for high reflectivity of laser. The Kerr medium 5 is arranged at the focus of the focusing cavity structure formed by the first concave reflecting mirror 4 and the second concave reflecting mirror 6 and is arranged at the Brewster angle for introducing the amplitude modulation effect; the diaphragm 7 is a small hole and is arranged on one side, close to the output end coupling mirror 8, of the mode-locked laser resonant cavity, and is used for adjusting the size of a laser mode (transverse mode), realizing the modulation of laser pulses by combining the self-amplitude modulation effect of Kerr media, and realizing stable mode-locked ultrashort pulse output. One surface of the output end coupling mirror 8 facing the mode locking laser resonant cavity is plated with a dielectric film through which laser part penetrates so as to realize laser oscillation and laser output.
The simulation results of the calculation of the laser mode sizes of different positions in the laser resonant cavity according to the ABCD transmission matrix are shown in fig. 2, the abscissa represents the different positions in the laser resonant cavity, and the ordinate represents the radial plane and the sagittal plane laser mode radius at the corresponding positions. The disc laser gain medium 3 is located at the zero position of the abscissa in the figure, the radius of the corresponding laser mode is about 1.0 mm, and because the highest output power of the laser is positively correlated with the size of the laser mode, compared with the radius of the laser mode which is usually smaller than hundred micrometers in the gain medium in the traditional four-mirror mode-locked resonant cavity structure, the millimeter-level laser mode in the gain medium in the brand-new disc mode-locked laser structure can support laser with higher average power, thereby realizing 10-100W-level high average power output; the Kerr medium 5 is located between the concave mirror pairs (the abscissa position is about 250 mm) formed by the first concave mirror 4 and the second concave mirror 6, the radius of the laser mode in the corresponding medium is about 60 μm, and the small laser mode can greatly improve the power density of laser focused in the Kerr medium and enhance the Kerr nonlinear modulation effect, so that the Kerr lens mode locking pulse output is realized.
According to the embodiment, the disc laser gain medium is used as an active reflection end mirror to replace an end surface mirror in a traditional four-mirror mode-locked laser resonant cavity, an independent Kerr medium is introduced into a laser to serve as a mode locking element, the gain medium in the traditional four-mirror mode-locked laser is separated from the Kerr medium, the brand new design can ensure that a smaller laser mode field in the Kerr medium is realized in an X-or Z-type four-mirror mode-locked resonant cavity so as to generate enough self-amplitude modulation effect to realize mode locking of a Kerr lens, and meanwhile, a proper large laser mode field in the disc gain medium is realized to generate high-average-power ultrashort pulse laser.
The foregoing is merely a preferred embodiment of the present invention, and it should be noted that modifications and variations could be made by those skilled in the art without departing from the technical principles of the present invention, and such modifications and variations should also be regarded as being within the scope of the invention.
Claims (9)
1. The high-power mode-locked disc laser is characterized by comprising a pumping source, a pumping light shaping system, a disc laser gain medium, a first concave reflector, a Kerr medium, a second concave reflector, a diaphragm and an output end coupling mirror; the disk laser gain medium, the first concave reflector, the second concave reflector and the output end coupling mirror form a mode locking laser resonant cavity, and the Kerr medium and the diaphragm are all arranged in the mode locking laser resonant cavity; the Kerr medium is positioned between the first concave reflecting mirror and the second concave reflecting mirror, and the first concave reflecting mirror and the second concave reflecting mirror form a focusing cavity structure; laser generated by the disc laser gain medium sequentially passes through the first concave reflector, the Kerr medium, the second concave reflector, the diaphragm and the output end coupling mirror to realize laser output.
2. The high power mode-locked disc laser of claim 1, wherein the pump source is a semiconductor laser.
3. The high power mode locked disc laser of claim 1 wherein the pump light shaping system comprises a plurality of collimating lenses and mirrors, the plurality of collimating lenses and mirrors being disposed in the optical path between the pump source and the disc laser gain medium according to a set rule, the pump light passing through the pump light shaping system to and fro over the disc laser gain medium a plurality of times so as to be substantially absorbed by the disc laser gain medium.
4. The high power mode locked disc laser of claim 1 wherein the disc laser gain medium is a laser crystal, a laser ceramic or glass, and a heat sink is provided on the backside thereof.
5. The high power mode locked disc laser of claim 1 wherein the kerr medium is positioned at the brewster angle at the focal point of the focusing cavity formed by the first concave mirror and the second concave mirror.
6. The high power mode locked disc laser of claim 1 wherein the concave surfaces of the first concave mirror and the second concave mirror are coated with a high-reflectivity dielectric film that is highly reflective to laser light.
7. The high power mode locked disc laser of claim 1 wherein the mode locked laser resonator is an X or Z laser resonator.
8. The high power mode-locked disk laser of claim 1, wherein said diaphragm is an aperture disposed in front of said output coupling mirror.
9. The high power mode locked disc laser of claim 1 wherein a side of the output coupling mirror facing the mode locked laser resonator is coated with a dielectric film that is partially transmissive to the laser light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011383586.6A CN112636146B (en) | 2020-12-01 | 2020-12-01 | High-power mode-locked disc laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011383586.6A CN112636146B (en) | 2020-12-01 | 2020-12-01 | High-power mode-locked disc laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112636146A CN112636146A (en) | 2021-04-09 |
| CN112636146B true CN112636146B (en) | 2024-02-06 |
Family
ID=75307661
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011383586.6A Active CN112636146B (en) | 2020-12-01 | 2020-12-01 | High-power mode-locked disc laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112636146B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114204397B (en) * | 2021-11-19 | 2024-02-02 | 华中科技大学 | GHz-magnitude ultra-high repetition frequency high-power femtosecond disc laser |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6363090B1 (en) * | 1998-02-25 | 2002-03-26 | Dentek-Lasersystems Produktions Ges.M.B.H | Laser system for producing ultra-short light pulses |
| CN104953455A (en) * | 2015-06-10 | 2015-09-30 | 中国科学院物理研究所 | Kerr-lens mode-locked solid sheet laser device |
| WO2016128341A1 (en) * | 2015-02-09 | 2016-08-18 | Deutsches Zentrum für Luft- und Raumfahrt e.V. | Method and system for generating pulsed laser radiation |
| CN107845948A (en) * | 2017-11-06 | 2018-03-27 | 华中科技大学 | A kind of disc laser of resonance intracavity pump |
| CN114204397A (en) * | 2021-11-19 | 2022-03-18 | 华中科技大学 | GHz-level ultrahigh repetition frequency high-power femtosecond disc laser |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8014433B2 (en) * | 2005-03-16 | 2011-09-06 | Apollo Instruments | Laser apparatuses with large-number multi-reflection pump systems |
| US20110150013A1 (en) * | 2009-12-17 | 2011-06-23 | Coherent, Inc. | Resonant pumping of thin-disk laser with an optically pumped external-cavity surface-emitting semiconductor laser |
| US8908737B2 (en) * | 2011-04-04 | 2014-12-09 | Coherent, Inc. | Transition-metal-doped thin-disk laser |
-
2020
- 2020-12-01 CN CN202011383586.6A patent/CN112636146B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6363090B1 (en) * | 1998-02-25 | 2002-03-26 | Dentek-Lasersystems Produktions Ges.M.B.H | Laser system for producing ultra-short light pulses |
| WO2016128341A1 (en) * | 2015-02-09 | 2016-08-18 | Deutsches Zentrum für Luft- und Raumfahrt e.V. | Method and system for generating pulsed laser radiation |
| CN104953455A (en) * | 2015-06-10 | 2015-09-30 | 中国科学院物理研究所 | Kerr-lens mode-locked solid sheet laser device |
| CN107845948A (en) * | 2017-11-06 | 2018-03-27 | 华中科技大学 | A kind of disc laser of resonance intracavity pump |
| CN114204397A (en) * | 2021-11-19 | 2022-03-18 | 华中科技大学 | GHz-level ultrahigh repetition frequency high-power femtosecond disc laser |
Non-Patent Citations (3)
| Title |
|---|
| Kerr-Lens Mode-Locked 2-μm Thin-Disk Lasers;Jinwei Zhang et.al.;《IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS》;第24卷(第5期);1-11 * |
| 二极管泵浦Yb:YAG Thin Disk激光器光束质量及V型腔腔内倍频的研究;单欣岩, 魏晓羽, 吴念乐, 李师群;量子电子学报(第05期);587-591 * |
| 高功率超快碟片激光技术研究进展（特邀）;王海林 等;《光子学报》;第50卷(第8期);0850208⁃1-19 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112636146A (en) | 2021-04-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9318867B2 (en) | Laser device with Kerr effect based mode-locking and operation thereof | |
| JP4984104B2 (en) | Passive mode-locked picosecond laser | |
| US4951294A (en) | Diode pumped modelocked solid state laser | |
| JP3989841B2 (en) | Compact ultrafast laser | |
| US6944201B2 (en) | Compact ultra fast laser | |
| CN105958313B (en) | Laser pulse modulator based on CrOCl crystal and application thereof in all-solid-state laser | |
| CN107565354B (en) | High-power Kerr lens self-mode-locking laser of LD (laser diode) pump | |
| JP3462456B2 (en) | Mode-locked solid-state laser | |
| CN112636146B (en) | High-power mode-locked disc laser | |
| US9431785B2 (en) | High power ultra-short laser device | |
| CN105811231A (en) | Volume Bragg grating high-energy pisosecond laser | |
| WO2024001392A1 (en) | Solid-state laser based on nonlinear amplifying loop mirror | |
| CN112886371A (en) | Laser regeneration amplifier based on disc gain medium | |
| CN113594842A (en) | Device and method for generating ultrashort pulse of erbium-doped laser | |
| EP1186078A2 (en) | Diode laser-pumped solid state laser | |
| CN207994332U (en) | The Yb of laser diode-pumped tungsten disulfide tune Q：GYSO all solid state lasers | |
| CN114498255A (en) | Unstable cavity laser with adjustable thermal stable region and method thereof | |
| CN203932662U (en) | Kerr lens self mode locking Yb:LYSO laser | |
| CN106532420B (en) | Hybrid cavity mode-locked laser oscillator and method for outputting laser by same | |
| Wüst et al. | 250 fs, 130 mW laser with tunable pulse repetition rate from 0.5 to 1.3 GHz | |
| CN104037604A (en) | Kerr lens self-mode-locking Yb:LSO laser | |
| CN204012177U (en) | Kerr lens self mode locking Yb:LSO laser | |
| CN220401096U (en) | High-power single-frequency intracavity five-time frequency laser | |
| CN112490836B (en) | Gas Raman laser based on annular unstable resonator | |
| CN218070536U (en) | High-power nanosecond intracavity quintupling frequency laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB03 | Change of inventor or designer information | ||
| CB03 | Change of inventor or designer information |
Inventor after: Ma Jie Inventor after: Liu Bei Inventor after: Yang Fan Inventor after: Shen Deyuan Inventor before: Ma Jie Inventor before: Liu Bei Inventor before: Yang Fan Inventor before: Tang Dingyuan Inventor before: Shen Deyuan |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |