CN112599640A - Buffer layer deposition device of copper indium gallium selenide thin-film solar cell - Google Patents
Buffer layer deposition device of copper indium gallium selenide thin-film solar cell Download PDFInfo
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- CN112599640A CN112599640A CN202011484852.4A CN202011484852A CN112599640A CN 112599640 A CN112599640 A CN 112599640A CN 202011484852 A CN202011484852 A CN 202011484852A CN 112599640 A CN112599640 A CN 112599640A
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- 239000010409 thin film Substances 0.000 title claims abstract description 28
- 230000008021 deposition Effects 0.000 title claims abstract description 24
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 title claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 238000012546 transfer Methods 0.000 claims abstract description 14
- 230000008676 import Effects 0.000 claims abstract description 4
- 239000000243 solution Substances 0.000 claims description 96
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea group Chemical group NC(=S)N UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 claims description 18
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 12
- 239000012498 ultrapure water Substances 0.000 claims description 12
- 239000011259 mixed solution Substances 0.000 claims description 11
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 10
- QCUOBSQYDGUHHT-UHFFFAOYSA-L cadmium sulfate Chemical compound [Cd+2].[O-]S([O-])(=O)=O QCUOBSQYDGUHHT-UHFFFAOYSA-L 0.000 claims description 10
- 229910000331 cadmium sulfate Inorganic materials 0.000 claims description 10
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 9
- 238000003825 pressing Methods 0.000 claims description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 2
- 238000005507 spraying Methods 0.000 abstract description 20
- 239000007788 liquid Substances 0.000 abstract description 14
- 239000000126 substance Substances 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 8
- 238000009718 spray deposition Methods 0.000 abstract description 6
- 238000012545 processing Methods 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 description 23
- 239000010408 film Substances 0.000 description 21
- 238000000151 deposition Methods 0.000 description 11
- 235000011114 ammonium hydroxide Nutrition 0.000 description 9
- 239000002994 raw material Substances 0.000 description 6
- 239000007921 spray Substances 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 238000010248 power generation Methods 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000889 atomisation Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000002159 nanocrystal Substances 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001540 jet deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to a solar cell processing apparatus. The utility model provides a CIGS thin-film solar cell's buffer layer deposition apparatus, includes the transfer roller, is equipped with the side in the both sides of transfer roller and holds in the palm, the side holds in the palm and the supporting platform of transfer roller constitution substrate, substrate top be equipped with nozzle assembly, nozzle assembly include the nozzle body, be equipped with the solution import on the upper plate of nozzle body, be equipped with the solution on the hypoplastron of nozzle body and exit, the solution of the hypoplastron both sides of nozzle body is exited at most. The buffer layer deposition device structure of the copper indium gallium selenide thin-film solar cell has a good spraying effect and good liquid uniformity on the surface of the substrate, and the uniformity of a chemical spray deposition thin film is fully improved; the technical problems of uneven spraying and unsatisfactory substrate deposition effect in the prior art are solved.
Description
Technical Field
The invention relates to a processing device of a solar cell, in particular to a buffer layer forming device of a flexible copper indium gallium selenide thin-film solar cell.
Background
With global warming, deterioration of ecological environment and shortage of conventional energy, solar energy has become an important strategic decision for sustainable development of various countries. The solar cell is a device for converting solar energy into electric energy, has unique performances exceeding resources such as electric energy and wind energy, and is expected to become an important support column of the future power industry. Solar cells are mainly classified into silicon solar cells, compound semiconductor thin film cells, organic polymer cells, nanocrystal cells, organic thin film cells, and the like. The CIGS thin-film solar cell can save a large amount of raw materials, is relatively less influenced by the price improvement of rare elements and the shortage of the raw materials, has strong light absorption capacity, good discharge stability, high conversion efficiency, long daytime power generation time, high power generation amount, low production cost, short energy recovery period and other advantages, and has wide market prospect.
With global warming, deterioration of ecological environment and shortage of conventional energy, solar energy has become an important strategic decision for sustainable development of various countries. The solar cell is a device for converting solar energy into electric energy, has unique performances exceeding resources such as electric energy and wind energy, and is expected to become an important support column of the future power industry. Solar cells are mainly classified into silicon solar cells, compound semiconductor thin film cells, organic polymer cells, nanocrystal cells, organic thin film cells, and the like. The CIGS thin-film solar cell can save a large amount of raw materials, is relatively less influenced by the price improvement of rare elements and the shortage of the raw materials, has strong light absorption capacity, good discharge stability, high conversion efficiency, long daytime power generation time, high power generation amount, low production cost, short energy recovery period and other advantages, and has wide market prospect.
Disclosure of Invention
The buffer layer deposition device structure of the copper indium gallium selenide thin-film solar cell has a good spraying effect and good liquid uniformity on the surface of the substrate, and the uniformity of a chemical spray deposition thin film is fully improved; the technical problems of uneven spraying and unsatisfactory substrate deposition effect in the prior art are solved.
The technical problem of the invention is solved by the following technical scheme: the utility model provides a CIGS thin-film solar cell's buffer layer deposition apparatus, includes the transfer roller, is equipped with the side in the both sides of transfer roller and holds in the palm, the side holds in the palm and the supporting platform of transfer roller constitution substrate, substrate top be equipped with nozzle assembly, nozzle assembly include the nozzle body, be equipped with the solution import on the upper plate of nozzle body, be equipped with the solution on the hypoplastron of nozzle body and exit, the solution of the hypoplastron both sides of nozzle body is exited at most. The arrangement of the side supports enables the two sides of the substrate to slightly tilt upwards, so that the solution is prevented from flowing down from the film to pollute equipment. The length of the nozzle main body is matched with the width of the substrate, the nozzle main body is filled with the solution, and under the condition that the original nozzle is only provided with a single-row solution outlet hole, the solution is unevenly distributed at a cavity inside the nozzle due to the impact force of the solution entering at a solution inlet. So that the solution is smoothly sprayed below the inlet, and the spraying is not smooth due to the weak water pressure at two sides; the solution that one of them fill in the nozzle can produce the reaction and precipitate for mixed solution (pure water, aqueous ammonia, cadmium sulfate), the single solution (thiourea) that fills in another nozzle can produce the crystallization in jet orifice department, and the solution of two nozzles goes out the aperture very little (0.4 mm) again, in addition nozzle both sides play water pressure is less, so lead to very easily that nozzle both sides jet orifice to appear blockking up, lead to the nozzle both sides to spray unsmoothly, thereby let spun solution homogeneity not good, it is many to form middle spraying volume, and the spraying of both sides can't arrive or the problem that the spraying volume is little, make the inhomogeneous problem of reaction solution distribution who forms on the substrate. Now with the solution of both sides and bore the increase, the play liquid measure of the solution of both sides has been improved, reduced and lead to the unable spun probability of solution because of the orifice blocks up, let the solution can spray the both sides of substrate, thereby it can let the solution to middle direction flow to let the both sides of substrate slightly tilt to set up to hold in the palm to incline, but because the solution measure just also about 1mm on the substrate, and solution possesses certain tension, the solution measure of assembling to the centre by both sides can not be many, and also solution of both sides sprays, the homogeneity of substrate surface liquid has been improved, the homogeneity of chemical spraying deposition film has been fully improved.
Preferably, the lower plate has a minimum number of solution outlets corresponding to the solution inlet. Solution outlet holes of the projection area of the solution inlet on the lower plate correspond to the solution inlet, so that the solution outlet holes are the fastest, the number of the solution outlet holes is reduced, the solution outlet speed is reduced due to the small aperture of the solution outlet holes, and therefore more solutions can flow through the two sides of the nozzle body and flow out from the positions with the large number of the solution outlet holes on the two sides, and the spraying uniformity is guaranteed.
Preferably, the solution inlet is located in the middle of the upper plate, and the number of the solution outlets is gradually increased from the middle of the nozzle body to both sides in the length direction. The incremental distribution can be multiple lines of a single hole in the middle, then multiple lines of two holes, then multiple lines of three holes, is not limited to each line of incremental distribution, and can realize the purpose of spraying solution on two sides of the substrate as long as the integral trend is ensured to be increased, so that the solution outlets on two sides are the most, and the probability of blocking of the spray holes is reduced.
Preferably, the nozzle body is provided with an ultrasonic assembly, the ultrasonic assembly comprises an ultrasonic generator and an ultrasonic transducer, and the ultrasonic transducer is mounted on the upper plate of the nozzle body. The ultrasonic wave subassembly has two, is located the both sides of two solution inlets respectively. Ultrasonic wave subassembly can let the production vibration, lets the better solution import of solution to both sides diffusion from, but also can effectively prevent that liquid reaction crystallization from blockking up solution and letting, avoids the nozzle to block up, can keep spraying evenly for a long time. The ultrasonic wave subassembly can break up into more tiny particle with big liquid drop, makes the liquid mixture in two nozzle bodies more even like this to improve the atomization effect of orifice solution, further improve the homogeneity that solution sprayed, thereby make the cladding material on the substrate also more even.
Preferably, the height of the side support is greater than that of the conveying roller, the supporting platform is U-shaped, the side support is arranged below the film substrate to support the film substrate, the pressing wheel is arranged above the film substrate, and the pressing wheel is arranged above the film substrate of the side support. The pinch roller is pressed above the junction of the conveying roller and the side support through the film substrate, is located at the position where the film substrate is tilted and horizontally contacted, can ensure that the tilted part is more close to the contact of the side support, simultaneously ensures the substrate level, does not have a crease tilted part, and simultaneously can also ensure that the substrate is uniformly heated.
Preferably, the nozzle body comprises two nozzle bodies, wherein the solution in one nozzle body is thiourea solution, the solution in the other nozzle body is a mixed solution of ultrapure water, cadmium sulfate and ammonia water, and the ultrapure water is preheated before entering the nozzle body. The probability of reaction and precipitation of the mixed solution is reduced, and the blockage of a nozzle is avoided.
Preferably, a cavity is formed between the upper plate and the lower plate of the nozzle body. The vibration effect of the ultrasonic assembly is improved. And the cavity has certain volume, and can be easily diffused to two sides rapidly under the condition that the number of the middle solution outlets is small.
Preferably, the nozzle body is provided with support heads on both side surfaces thereof.
Preferably, a holder is provided on one side of the nozzle assembly, an ultrasonic transducer is mounted on the holder, and a mesh is connected to the ultrasonic transducer and positioned in the solution above the substrate. The screen cloth is latticed, and the ultrasonic vibrator drives the screen cloth vibration, vibrates the mixture to solution to guarantee the degree of consistency of solution.
Therefore, the buffer layer deposition device of the CIGS thin-film solar cell has the following advantages:
1. according to the invention, by arranging the ultrasonic generating component and changing the arrangement of the solution outlet holes, the probability of blocking the spray holes is reduced, the solution is sprayed more smoothly, the distribution uniformity of the sprayed liquid on the surface of the substrate is improved, the uniform distribution of the liquid on the surface of the substrate is ensured, and the uniformity of the chemical spray deposition film is fully improved.
2. The invention uniformly sprays reaction solution on a flexible film substrate deposited with a back electrode and an absorption layer through an ultrasonic nozzle for chemical spray deposition, a plurality of heating blocks are arranged below the film substrate and keep a non-contact state with the film substrate, the film substrate keeps low-speed uniform rolling in along with a roll-to-roll system, a latticed ultrasonic generator is immersed in the solution on the surface of the film to vibrate and mix the solution, when the temperature of the mixed solution on the surface of the film substrate gradually rises and is maintained to the optimal reaction temperature, and the solution completely reacts after reaching the optimal reaction temperature, and finally, the uniform buffer layer with controllable thickness and good photoelectric property is prepared.
3. The two sides of the buffer layer reaction zone are respectively provided with the side supports, so that the two sides of the flexible film substrate slightly tilt, the solution is prevented from leaking, the equipment is prevented from being polluted, and the utilization rate of raw materials is improved. The conveying roller is provided with a pinch roller above two sides, the pinch roller is pressed at the conveying roller and the side support joint through the film substrate, the pinch roller is positioned at the position of the film substrate tilting and horizontal contact, the part of the film tilting and the side support contact can be ensured to be more compact, the bottom of the film substrate is ensured to be level and smooth, no crease tilting part is arranged, and the substrate can be heated uniformly.
Drawings
Fig. 1 is a flow chart of the working process of the buffer layer deposition device of the copper indium gallium selenide thin-film solar cell.
Fig. 2 is a top view of the buffer layer reaction region structure of fig. 1.
Fig. 3 is a side view of the buffer layer reaction zone structure of fig. 1.
Fig. 4 is a top view of the nozzle body of fig. 2.
Fig. 5 is a bottom view of the nozzle body of fig. 2.
Detailed Description
The technical scheme of the invention is further specifically described by the following embodiments and the accompanying drawings.
Example (b):
as shown in FIG. 1, the buffer reaction zone 16 is distributed by the conveying roller 5 and the heating block 12 at intervals, 2 ultrasonic nozzles for chemical spray deposition are sequentially arranged above the front end of the buffer reaction zone 16, one ultrasonic nozzle is used for spraying thiourea solution with the concentration of 0.1-1 mol/L, and the other ultrasonic nozzle is used for spraying mixed solution of ultrapure water, cadmium sulfate and ammonia water, the concentration of cadmium sulfate is 0.01-0.1 mol/L, and the concentration of ammonia water is 1-15 mol/L. The mixed solution of thiourea solution, ultrapure water, cadmium sulfate and ammonia water is preheated before spraying, and the preheating temperature is 50-80 ℃. The two sides of the buffer layer reaction zone 16 are respectively provided with a side support 6, the side supports 6 enable the two sides of the substrate 1 to tilt by 1-2cm, the solution is prevented from leaking outwards, the equipment pollution is avoided, and the raw material utilization rate is improved. The transfer roller both sides are equipped with the pinch roller, and the pinch roller is pressed on the transfer roller through the substrate, presses in the position of substrate perk and horizontal contact, can guarantee that the part of perk is held in the palm the inseparabler of contact with the side, guarantees the substrate level simultaneously, does not have the crease perk part, also can make the substrate be heated evenly simultaneously. A group of grid-shaped screens 13 are immersed in the solution above the substrate of the buffer layer reaction zone 16 after passing through the nozzle, ultrasonic vibrators 14 are connected above the grid-shaped screens 13, and the ultrasonic vibrators 14 are fixed on the inner wall of the cavity of the buffer layer reaction zone through a support 15. The ultrasonic vibrator drives the screen to vibrate, so that the solution is further uniformly mixed, and the reaction effect is improved.
After the flexible substrate deposited with the back electrode Mo and the absorbing layer CIGS is unreeled, the flexible substrate is reeled in on a buffer layer reaction area at the speed of 0.9-1.0 m/min, the mixed liquid of thiourea solution, ultrapure water, cadmium sulfate and ammonia water is sprayed on the substrate, the flow rate of spraying the thiourea solution is 1000 ml/min, and the flow rate of spraying the mixed liquid of the ultrapure water, the cadmium sulfate and the ammonia water is 100 ml/min. The buffer layer reaction zone is kept at 350-450 ℃ through a heating block, the deposition is completed after the reaction is carried out for 5-10 min, and then the deposition is cooled, washed, dried and wound.
According to the invention, the mixed solution of thiourea solution, ultrapure water, cadmium sulfate and ammonia water is uniformly sprayed on the flexible substrate deposited with the back electrode Mo and the absorbing layer CIGS through the ultrasonic nozzle for chemical jet deposition, and the chemical substances completely react due to heating and ultrasonic oscillation along with the winding of the substrate to a high-temperature area, so that the cds buffer layer with controllable thickness, uniformity and good photoelectric property is finally prepared.
As shown in fig. 2 and 3, the schematic diagram of the buffer layer deposition reaction zone of the cigs thin-film solar cell of the present invention includes a transfer roller 5, two side supports 6 are respectively disposed on two sides of the transfer roller 5, and the side supports 6 and the transfer roller 5 form a support platform for the substrate 1. The side supports on both sides lift up the substrate 1 so that the substrate 1 forms a U-shape. The conveying roller 5 is arranged below the substrate 1, the pinch roller 7 is arranged above the side support 6, the pinch roller 7 presses on the conveying roller 5 through the substrate, and presses the position of the tilting and horizontal contact of the substrate, so that the tilting part can be ensured to be more tightly contacted with the side support.
Two nozzle bodies 2 which are parallel to each other are further arranged above the substrate 1, the solution poured into one nozzle body 2 is thiourea solution, the solution poured into the other nozzle body 2 is mixed solution of ultrapure water, cadmium sulfate and ammonia water, the ultrapure water is preheated before entering the nozzle body, the mixed solution is more uniform due to the heat of the ultrapure water, and meanwhile, the crystallization precipitation of the mixed solution can be effectively prevented.
As shown in fig. 4 and 5, which are schematic structural diagrams of the ultrasonic nozzle component in the buffer layer deposition reaction zone of the cigs thin-film solar cell of the present invention, the nozzle body 2 includes an upper plate 12 and a lower plate 10, and the upper plate 12 and the lower plate 10 form a cavity 9. Two solution inlets 3 are arranged in the middle of the upper plate 10, and a solution outlet 8 is arranged on the lower plate. An ultrasonic assembly 4 is respectively installed on two sides of the solution inlet 3, an ultrasonic transducer is installed on the upper plate of the nozzle body, and supporting heads 11 are integrally formed on two sides of the nozzle body 2 and used for installing the nozzle body 2.
The ultrasonic assembly 4 comprises an ultrasonic generator and an ultrasonic transducer, the ultrasonic generator is electrically connected with the ultrasonic transducer, and the ultrasonic transducer is arranged inside the nozzle body 1. The ultrasonic generator is used for converting commercial power into a high-frequency alternating current signal matched with the ultrasonic transducer and driving the ultrasonic transducer to work. The function of the ultrasonic transducer is to convert the input electric power into mechanical power (i.e. ultrasonic waves) and transmit the mechanical power, and a small part of the power is consumed by the ultrasonic transducer. The ultrasonic generation component 4 is arranged to make the solution fully vibrate in the nozzle, so that the nozzle is prevented from being blocked, the solution atomization effect is improved, and the spraying uniformity can be kept for a long time.
The solution outlet holes 8 are gradually increased from the middle to the two sides, and the aperture of the solution outlet holes 8 is about 0.4 mm. For example, if the solution outlet holes 8 in the middle are 1 hole each, three columns are provided; then increasing the number of the solution outlets to 2, and arranging three columns; then increase to solution outlet hole each 3, set up three columns, increase in order. Therefore, the influence in the middle can be effectively weakened, the amount of the solution sprayed from the two sides is larger than that in the middle, the spraying flow of the two sides is properly increased, the flow in the middle is weakened, and the solution on the two sides can flow to the middle on the substrate, so that the liquid is more uniformly distributed on the two sides and the middle, and the spraying distribution of the solution is uniform.
According to the invention, the ultrasonic wave generating component 4 is arranged and the arrangement of the solution outlet holes 8 is changed, so that the solution is sprayed more smoothly, the sprayed liquid is distributed on the surface of the substrate more uniformly, the uniformity of the liquid on the surface of the substrate is maintained, and the uniformity of the chemical spray deposition film is fully improved.
The present invention has been described in detail with reference to the specific and preferred embodiments, but it should be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and any modifications, equivalents and the like, which are within the spirit and principle of the present invention, should be included in the scope of the present invention.
Claims (9)
1. The utility model provides a buffer layer deposition apparatus of copper indium gallium selenide thin-film solar cell, includes the transfer roller, is equipped with the side in the both sides of transfer roller and holds in the palm, and the side holds in the palm and the transfer roller constitutes the supporting platform of substrate, its characterized in that: the substrate top be equipped with nozzle assembly, nozzle assembly include the nozzle body, be equipped with the solution import on the upper plate of nozzle body, be equipped with solution outlet on the hypoplastron of nozzle body, the solution outlet of the hypoplastron both sides of nozzle body is the most.
2. The buffer layer deposition device of the CIGS thin-film solar cell of claim 1, wherein: the lower plate has a minimum number of solution outlets corresponding to the solution inlet.
3. The buffer layer deposition device of the CIGS thin-film solar cell according to claim 1 or 2, wherein: the solution inlet is positioned in the middle of the upper plate, and the number of the solution outlet holes is gradually increased from the middle of the nozzle body to two sides in the length direction.
4. The buffer layer deposition device of the CIGS thin-film solar cell according to claim 1 or 2, wherein: the nozzle body on be equipped with the ultrasonic wave subassembly, the ultrasonic wave subassembly includes supersonic generator and ultrasonic transducer, ultrasonic transducer installs on the upper plate of nozzle body.
5. The buffer layer deposition device of the CIGS thin-film solar cell according to claim 1 or 2, wherein: the height of the side support is greater than that of the conveying roller, the supporting platform is U-shaped, the side support is arranged below the substrate and supports the substrate, the pressing wheel is arranged above the substrate, and the pressing wheel is positioned above the substrate of the side support.
6. The buffer layer deposition device of the CIGS thin-film solar cell according to claim 1 or 2, wherein: the nozzle body include two, the solution in one of them nozzle body is thiourea solution, and the solution in the other nozzle body is the mixed solution of ultrapure water, cadmium sulfate and aqueous ammonia, ultrapure water preheat before getting into the nozzle body.
7. The buffer layer deposition device of the CIGS thin-film solar cell according to claim 1 or 2, wherein: a cavity is formed between the upper plate and the lower plate of the nozzle body.
8. The buffer layer deposition device of the CIGS thin-film solar cell according to claim 1 or 2, wherein: two side surfaces of the nozzle body are respectively provided with a supporting head.
9. The buffer layer deposition device of the CIGS thin-film solar cell according to claim 1 or 2, wherein: and a support is arranged on one side of the nozzle assembly, an ultrasonic vibrator is arranged on the support, the ultrasonic vibrator is connected with a screen, and the screen is positioned in the solution above the substrate.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4928584A (en) * | 1987-04-28 | 1990-05-29 | General Dispensing Systems Limited | Infuser |
| CN201655826U (en) * | 2009-12-29 | 2010-11-24 | 中国电子科技集团公司第十八研究所 | Buffer layer preparation device for CIGS solar battery |
| CN106684178A (en) * | 2017-01-04 | 2017-05-17 | 浙江尚越新能源开发有限公司 | CIGS thin-film solar cell buffer layer preparation system and CIGS thin-film solar cell buffer layer preparation method |
| CN206425165U (en) * | 2017-01-04 | 2017-08-22 | 浙江尚越新能源开发有限公司 | Ultrasonic nozzle for chemical jet deposition |
| CN208284492U (en) * | 2018-06-14 | 2018-12-25 | 浙江尚越新能源开发有限公司 | Copper indium gallium selenide chemical thought CSD integral device |
| CN110055521A (en) * | 2019-06-11 | 2019-07-26 | 绵阳金能移动能源有限公司 | A kind of CdS film chemical thought device and preparation method thereof |
-
2021
- 2021-01-22 CN CN202011484852.4A patent/CN112599640B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4928584A (en) * | 1987-04-28 | 1990-05-29 | General Dispensing Systems Limited | Infuser |
| CN201655826U (en) * | 2009-12-29 | 2010-11-24 | 中国电子科技集团公司第十八研究所 | Buffer layer preparation device for CIGS solar battery |
| CN106684178A (en) * | 2017-01-04 | 2017-05-17 | 浙江尚越新能源开发有限公司 | CIGS thin-film solar cell buffer layer preparation system and CIGS thin-film solar cell buffer layer preparation method |
| CN206425165U (en) * | 2017-01-04 | 2017-08-22 | 浙江尚越新能源开发有限公司 | Ultrasonic nozzle for chemical jet deposition |
| CN208284492U (en) * | 2018-06-14 | 2018-12-25 | 浙江尚越新能源开发有限公司 | Copper indium gallium selenide chemical thought CSD integral device |
| CN110055521A (en) * | 2019-06-11 | 2019-07-26 | 绵阳金能移动能源有限公司 | A kind of CdS film chemical thought device and preparation method thereof |
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