CN112582808A - Broadband butterfly patch antenna array suitable for millimeter wave 5G communication - Google Patents
Broadband butterfly patch antenna array suitable for millimeter wave 5G communication Download PDFInfo
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- CN112582808A CN112582808A CN202011267297.XA CN202011267297A CN112582808A CN 112582808 A CN112582808 A CN 112582808A CN 202011267297 A CN202011267297 A CN 202011267297A CN 112582808 A CN112582808 A CN 112582808A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
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Abstract
The invention discloses a broadband butterfly patch antenna array suitable for millimeter wave 5G communication, which comprises a plurality of butterfly radiating units arranged in an array manner, wherein each butterfly radiating unit comprises a first dielectric substrate, a second dielectric substrate, a third dielectric substrate, a metal floor with a gap, a microstrip feeder line and a butterfly radiator, the metal floor is positioned on the upper surface of the first dielectric substrate, the microstrip feeder line is positioned on the lower surface of the first dielectric substrate, the butterfly radiator comprises two vertical inductive metal through holes which penetrate through the third dielectric substrate, a metal connecting strip line with a round tail end and two radiating patches, the two radiating patches are oppositely arranged on the upper surface of the third dielectric substrate and are respectively connected with the metal connecting strip line through the two inductive metal through holes; and the microstrip feed lines in each butterfly-shaped radiating unit are connected through a T-shaped power distribution junction to form a microstrip feed network. The antenna array can be used in a 5G millimeter wave communication system.
Description
Technical Field
The invention belongs to the field of wireless communication, and particularly relates to a broadband butterfly patch antenna array suitable for millimeter wave 5G communication.
Background
Due to the increasing shortage of spectrum resources in the low frequency band, the development of radio frequency devices in the millimeter wave band has attracted increasing attention in academia and industry. The millimeter wave has the characteristic of wide impedance bandwidth and strong anti-interference capability, but the loss of the millimeter wave in free space is much larger than that of the electromagnetic wave in a lower frequency band. The most basic requirement of the millimeter wave antenna is high gain, so as to compensate the loss of the millimeter wave antenna in free space. The millimeter wave technology applied to future 5G communication systems has achieved wide consensus worldwide, and each country divides the respective millimeter wave 5G communication frequency band according to the actual situation. According to the existing reports at home and abroad, the bandwidth of most millimeter wave patch antenna arrays cannot cover the frequency band of 37-42.5GHz when the two frequency bands of 24.75GHz-27.5GHz and 37GHz-42.5GHz are planned to be used for 5G communication in China.
According to investigation and understanding, the prior art that has been disclosed is as follows:
in 2015, Dian Wang, Kung Bong et al published in an article entitled "A Novel Wireless broadband and Differencelike-Fed high-Order model Millimeter-Wave Antenna" by IEEE TRANSACTIONS ANTENNAS AND PROPAGATION, TM passing through an excitation Patch Antenna10And TM30Mode, an impedance bandwidth of about 18% is achieved. By forming the antenna units into a differential 2-element array, the cross polarization of the H surface of a radiation pattern is effectively reduced. However, the antenna cannot form a large-scale antenna array due to the large electrical size of the antenna, which limits the practical application of the antenna. And the feed network of the differential 2-element antenna array is non-planar, and the structure is very complex.
In 2017, Jun Xu, Wei Hong et al, in an article entitled "A Q-band Low-Profile Dual Circuit Polarized Array Antenna incorporation Lineary Polarized Substrate Integrated Waveguide feed Array" published by "IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION", proposed a Substrate Integrated Waveguide Fed millimeter wave Linearly Polarized co-slot Patch Antenna Array. Two layers of dielectric plates are adopted and are tightly connected together through a layer of dielectric curing sheet with the thickness of 0.1 mm. The antenna has a compact structure and a low section, but the antenna only has about 8% of impedance bandwidth covering the frequency range of 39.8GHz-43.5GHz, and cannot meet the requirement of the bandwidth of a 5G millimeter wave communication system.
Disclosure of Invention
In order to solve the above-mentioned deficiencies of the prior art, the present invention proposes a design based on inductive loading and butterfly patch wideband patch antenna array. The antenna array has the characteristics of wide band, high gain, simple structure, low cost and the like, and can be used in the millimeter wave 5G communication system of China.
The purpose of the invention can be achieved by adopting the following technical scheme:
a broadband butterfly patch antenna array suitable for millimeter wave 5G communication comprises a plurality of butterfly radiating units arranged in an array,
each butterfly-shaped radiation unit comprises a first dielectric substrate, a second dielectric substrate, a third dielectric substrate, a metal floor with a gap, a micro-strip feeder line and a butterfly-shaped radiator, the first dielectric substrate, the second dielectric substrate and the third dielectric substrate are stacked in sequence from bottom to top, the metal floor is positioned on the upper surface of the first dielectric substrate, the microstrip feeder is positioned on the lower surface of the first dielectric substrate, the butterfly radiator comprises two vertical inductive metal through holes, a metal connecting strip line with a round tail end and two radiation patches, the two inductive metal through holes are arranged on the third dielectric substrate in a penetrating way, the metal connecting strip line is positioned between the second dielectric substrate and the third dielectric substrate, and the two radiation patches are oppositely arranged on the upper surface of the third dielectric substrate and are respectively connected with the metal connecting strip line through the two inductive metal through holes;
the microstrip feed lines in each butterfly-shaped radiating unit are connected through T-shaped power distribution junctions to form a microstrip feed network.
Preferably, in each butterfly-shaped radiation unit, the thicknesses of the first dielectric substrate, the second dielectric substrate and the third dielectric substrate are different. The thickness of the first dielectric substrate is determined by the characteristic impedance of the microstrip feeder, the thickness of the second dielectric substrate is determined by the impedance conversion ratio between the slot and the butterfly radiator, and the thickness of the third dielectric substrate is determined by the equivalent lumped inductance value of the two inductive metal through holes, so that the thicknesses are different.
As a preferable scheme, in each butterfly-shaped radiation unit, the slot etched on the metal floor is located right below the butterfly-shaped radiator, and is bisected perpendicularly to the metal connecting strip line. The gap which is vertically and equally divided with the metal connecting strip line is introduced under the butterfly radiator so as to excite the odd-order mode of the butterfly radiator.
Preferably, in each butterfly-shaped radiating element, the microstrip feed line is located right below the slit on the metal floor, and the microstrip feed line has an open-circuit extension. The purpose of introducing the open circuit extension is to tune the impedance matching of the butterfly radiating element.
Preferably, the butterfly radiator is a non-planar structure.
As a preferred scheme, in each butterfly-shaped radiating unit, two regular diamond-shaped radiating patches and a metal connecting strip line of the butterfly-shaped radiator are both horizontally arranged.
As a preferred scheme, in each butterfly-shaped radiation unit, two regular diamond-shaped radiation patches of the butterfly-shaped radiation unit are connected with two circular ends of a metal connection strip line through two inductive metal via holes.
Preferably, in each butterfly-shaped radiating unit, the two inductive metal vias of the butterfly-shaped radiating unit have the same shape and size. On one hand, the current on the two inductive metal through holes is cancelled in an equal amplitude manner, and cross polarization is inhibited; on the other hand, the symmetrical radiation pattern is obtained in order to ensure that the currents on the two regular diamond radiation patches are in equal amplitude and same phase.
Preferably, each of the radiation patches 7 has a gradual or non-gradual shape.
Preferably, the antenna array is formed by arranging a plurality of butterfly-shaped radiation units along the directions of an x axis and a y axis.
Compared with the prior art, the invention has the following beneficial effects:
1. by arranging the inductive metal via hole, two radiating resonant modes of the butterfly-shaped radiating unit are pulled close, so that the dual-mode broadband characteristic is realized.
2. The butterfly patch antenna array expanded by the dual-mode butterfly radiating unit not only has wide impedance bandwidth, but also has very high gain. Full-wave simulation verifies that the relative impedance bandwidth of the antenna array with the reflection coefficient lower than-10 dB can reach 30%, the highest gain reaches 18.5dBi, and the gains in the working frequency band are all higher than 17 dBi.
3. Because the two close resonant modes of the butterfly-shaped radiating unit have similar radiation characteristics, the dual-mode butterfly-shaped radiating unit can obtain a stable radiation pattern in a working frequency band, and further, an antenna array expanded by the butterfly-shaped radiating unit can also obtain a stable radiation pattern.
4. The antenna array provided by the invention has the advantages of wide impedance bandwidth, wide radiation bandwidth, high gain, simple structure, low cost and the like, and can be used in a 5G millimeter wave communication system.
Drawings
Fig. 1 is a perspective view of an inductively loaded dual-mode butterfly radiating unit according to an embodiment of the present invention.
Fig. 2 is a top view of an inductively loaded dual-mode butterfly radiating unit according to an embodiment of the present invention.
Fig. 3 is a front view of an inductively loaded dual-mode butterfly radiating element according to an embodiment of the present invention.
Fig. 4 is a front view of a wideband 8-element butterfly patch antenna array according to an embodiment of the present invention.
Fig. 5 is a simulation curve of the reflection coefficient of the inductively loaded dual-mode butterfly radiating unit varying with frequency according to the embodiment of the present invention.
Fig. 6 shows reflection coefficients (| S) of the wideband 8-ary butterfly patch antenna array according to an embodiment of the present invention11|) and Gain (Gain) versus frequency.
Fig. 7 is a radiation pattern of the E-plane main polarization and the cross polarization of the wideband 8-element butterfly patch antenna array at 40GHz according to the embodiment of the present invention.
Fig. 8 is a radiation pattern of the H-plane main polarization and the cross polarization of the wideband 8-element butterfly patch antenna array at 40GHz according to the embodiment of the present invention.
The antenna comprises a substrate body, a first dielectric substrate, a second dielectric substrate, a third dielectric substrate, a metal floor, a microstrip feeder, a slit, a radiating patch, a sensitive metal via hole and a metal connecting strip line, wherein the substrate body comprises 1-the first dielectric substrate, 2-the second dielectric substrate, 3-the third dielectric substrate, 4-the metal floor, 5-the microstrip feeder, 6-the slit, 7-the radiating patch, 8-the sensitive metal via hole and 9.
Detailed Description
Example (b):
as shown in fig. 1 to 4, the wideband butterfly patch antenna array provided in this embodiment includes 8 butterfly radiating elements, and the 8 butterfly radiating elements are arranged along the x-axis and the y-axis directions, which is referred to as a wideband 8-element butterfly patch antenna array. Of course, in other embodiments, a different number of butterfly radiating elements may be provided as appropriate.
Each butterfly-shaped radiating unit comprises a first dielectric substrate 1, a second dielectric substrate 2, a third dielectric substrate 3, a metal floor 4, a microstrip feeder 5, two radiating patches 7, two inductive metal through holes 8 and a metal connecting strip line 9 with a circular tail end. In this embodiment, the radiation patch 7 is provided in a gradually changing shape, such as a regular diamond. In other embodiments, the radiating patches may also be provided in a non-graduated shape, such as a square or rectangle. The gradual change or non-gradual change shape can realize the broadband; but in contrast, a butterfly radiating element with a gradually changing shape of the radiating patch can obtain a wider impedance bandwidth.
The first dielectric substrate 1, the second dielectric substrate 2 and the third dielectric substrate 3 are sequentially stacked and respectively form the first dielectric substrate 1, the second dielectric substrate 2 and the third dielectric substrate 3 from bottom to top; the metal floor 4 is positioned on the upper surface of the first medium substrate 1, and a slit 6 is etched on the metal floor 4; the microstrip feed line 5 is located on the lower surface of the first dielectric substrate 1. The butterfly radiator is of a non-planar structure and comprises two inductive metal through holes 8 with the same shape and size, a metal connecting strip line 9 with a circular tail end and two radiating patches 7, wherein the inductive metal through holes 8 are oppositely arranged and vertically penetrate through the third dielectric substrate 3, the metal connecting strip line 9 with the circular tail end is horizontally arranged between the second dielectric substrate 2 and the third dielectric substrate 3, and the two positive radiating patches 7 are horizontally oppositely arranged on the upper surface of the third dielectric substrate 3 and are respectively connected with the metal connecting strip line 9 through the inductive metal through holes 8.
And the microstrip feed lines in each butterfly-shaped radiating unit are connected through a T-shaped power distribution junction to form a microstrip feed network. The 8-element butterfly patch antenna array provided in this embodiment includes two rows of butterfly radiating elements. Firstly, the microstrip feeder lines of the radiation units in each row are connected together in pairs through two T-shaped power distribution junctions; then, two T-shaped power distribution junctions are introduced between the opposite T-shaped power distribution junctions between the two rows for reconnection; and finally, introducing a T-shaped power distribution junction to connect the two T-shaped power distribution junctions. After the three steps, a 1-to-8 power division feed network comprising 7T-shaped power distribution junctions is formed.
In each butterfly-shaped radiation unit, two radiation patches 7, two inductive metal via holes 8 and a metal connecting strip line 9 with a circular tail end form a butterfly-shaped radiation body together, wherein the two inductive metal via holes 8 serving as disturbance are used for drawing the odd-order mode of two radiations of the butterfly-shaped radiation body, and the two radiation patches 7 are used for radiation and participate in resonance together with the metal connecting strip line 9 with the circular tail end; by controlling the thickness of the third dielectric substrate 3, the height of the dual inductive metal via 8 can be controlled, thereby controlling the equivalent lumped inductance value of the dual inductive metal via 8; the first dielectric substrate 1, the microstrip feeder 5 and the slot 6 form a slot coupling feed structure together, and the slot coupling feed structure is used for exciting an odd-order mode of the butterfly-shaped radiator; by controlling the thickness of the second dielectric substrate 2, the impedance conversion ratio between the slit 6 and the butterfly radiator can be controlled. The butterfly radiation unit is expanded into an 8-element butterfly patch antenna array, so that higher gain can be obtained.
In detail, in each butterfly radiating element, two positive radiating patches 7 are connected to two circular ends of a metal connecting strip line 9 through two inductive metal vias 8.
In detail, in each butterfly-shaped radiating element, the microstrip feed line is located right below the thin slot 6 on the metal floor 4 and has an open-circuit extension.
In detail, in each butterfly-shaped radiation unit, the slot 6 etched on the metal floor 4 is positioned right below the butterfly-shaped radiator and is vertically and equally divided with the metal connecting strip line 9.
In the above embodiment, the first dielectric substrate 1, the second dielectric substrate 2 and the third dielectric substrate 3 are made of any one of FR-4, polyimide, teflon glass cloth and co-fired ceramic; the metal floor 4, the microstrip feeder 5 and the radiation patch 8 adopt any one of aluminum, iron, tin, copper, silver, gold and platinum or an alloy of any one of aluminum, iron, tin, copper, silver, gold and platinum.
Verification and simulation are performed on the radiation unit of the broadband 8-element butterfly patch antenna array of the embodiment through calculation and electromagnetic field full-wave simulation, and as shown in fig. 5, reflection coefficient simulation parameters of the antenna in a frequency range of 30 GHz-50 GHz are given; it can be seen that in the frequency band range of 35GHz to 47.5GHz, the reflection coefficient is less than-10 dB, indicating that 90% of the input power in this frequency band is not reflected, and therefore the radiating element has a wide impedance matching bandwidth. As shown in fig. 6, the reflection coefficient and gain simulation parameters of the wideband 8-element butterfly patch antenna array in the frequency range of 33 GHz-45 GHz are given; it can be seen that within the frequency band range of 34GHz to 44.5GHz, the reflection coefficient is less than-10 dB, and the gain value is between 17dBi to 18.5dBi, which indicates that 90% of the input power in the frequency band cannot be reflected, and the gain is improved by 17dBi to 18.5dBi compared with an isotropic antenna, so that the antenna array has a wider bandwidth and higher gain, has good performance, and can meet the requirement of 5G communication.
The xoz plane radiation pattern of the wide-band 8-element butterfly patch antenna array at 40GHz is shown in fig. 7, and the yoz plane radiation pattern is shown in fig. 8. The radiation pattern of the antenna array has symmetric main lobes, cross-polarizations below-20 dBi, and sidelobe levels below-12 dBi, as seen in the patterns of two different cut planes. The invention has the characteristics of broadband, high gain and the like, and the good radiation pattern makes the invention especially suitable for the millimeter wave 5G communication system in China.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can substitute or change the technical solution of the present invention and the inventive concept within the scope of the present invention disclosed by the present invention.
Claims (10)
1. The utility model provides a broadband butterfly patch antenna array suitable for millimeter wave 5G communication which characterized in that: comprises a plurality of butterfly-shaped radiation units which are arranged in an array,
each butterfly-shaped radiation unit comprises a first dielectric substrate (1), a second dielectric substrate (2), a third dielectric substrate (3), a metal floor (4) with a gap (6), a microstrip feeder (5) and a butterfly-shaped radiator, wherein the first dielectric substrate (1), the second dielectric substrate (2) and the third dielectric substrate (3) are sequentially stacked from bottom to top, the metal floor (4) is positioned on the upper surface of the first dielectric substrate (1), the microstrip feeder (5) is positioned on the lower surface of the first dielectric substrate (1), the butterfly-shaped radiator comprises two vertical inductive metal through holes (8), a metal connecting strip line (9) with a circular tail end and two radiation patches (7), the two inductive metal through holes (8) are arranged on the third dielectric substrate (3) in a penetrating manner, and the metal connecting strip line (9) is positioned between the second dielectric substrate (2) and the third dielectric substrate (3), the two radiation patches (7) are oppositely arranged on the upper surface of the third dielectric substrate (3) and are respectively connected with the metal connecting strip line (9) through the two inductive metal through holes (8);
the microstrip feed lines in each butterfly-shaped radiating unit are connected through T-shaped power distribution junctions to form a microstrip feed network.
2. The broadband butterfly patch antenna array suitable for millimeter wave 5G communication according to claim 1, wherein: in each butterfly-shaped radiation unit, the thicknesses of the first dielectric substrate (1), the second dielectric substrate (2) and the third dielectric substrate (3) are different.
3. The broadband butterfly patch antenna array suitable for millimeter wave 5G communication according to claim 1, wherein: in each butterfly-shaped radiation unit, the slot (6) etched on the metal floor (4) is positioned right below the butterfly-shaped radiator and is vertically and equally divided with the metal connecting strip line (9).
4. The broadband butterfly patch antenna array suitable for millimeter wave 5G communication according to claim 1, wherein: in each butterfly-shaped radiating element, the microstrip feeder is positioned right below the fine slot (6) on the metal floor (4) and provided with an open circuit extension.
5. The broadband butterfly patch antenna array suitable for millimeter wave 5G communication according to claim 1, wherein: the butterfly radiator is a non-planar structure.
6. The broadband butterfly patch antenna array suitable for millimeter wave 5G communication according to claim 5, wherein: in each butterfly-shaped radiating unit, two radiating patches (7) and a metal connecting strip line (9) of the butterfly-shaped radiator are horizontally arranged.
7. The broadband butterfly patch antenna array suitable for millimeter wave 5G communication according to claim 6, wherein: in each butterfly-shaped radiation unit, the two radiation patches (7) are connected with the two round ends of the metal connecting strip line (9) through the two inductive metal through holes (8).
8. The broadband butterfly patch antenna array suitable for millimeter wave 5G communication according to claim 7, wherein: in each butterfly-shaped radiating unit, the shape and the size of the two inductive metal through holes (8) are completely the same.
9. The broadband butterfly patch antenna array suitable for millimeter wave 5G communication according to claim 1, wherein: each of the radiation patches (7) is in a gradual or non-gradual shape.
10. A wideband butterfly patch antenna array suitable for mm-wave 5G communications according to claims 1-9, characterized in that: the antenna array is formed by arranging a plurality of butterfly-shaped radiating units along the directions of an x axis and a y axis.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113571892A (en) * | 2021-07-30 | 2021-10-29 | 海信集团控股股份有限公司 | Antenna device, vehicle-mounted millimeter wave radar and automobile |
| CN116247428A (en) * | 2023-05-11 | 2023-06-09 | 微网优联科技(成都)有限公司 | Millimeter wave array antenna |
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