CN112538628B - Post-etch protection method for aluminum layer - Google Patents

Post-etch protection method for aluminum layer Download PDF

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Publication number
CN112538628B
CN112538628B CN201911042647.XA CN201911042647A CN112538628B CN 112538628 B CN112538628 B CN 112538628B CN 201911042647 A CN201911042647 A CN 201911042647A CN 112538628 B CN112538628 B CN 112538628B
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aluminum layer
gas
hydrogen
post
etching
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CN112538628A (en
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陈菁华
谢传贤
赖汉昭
吴芳仪
赖文杰
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Powerchip Technology Corp
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Powerchip Technology Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F15/00—Other methods of preventing corrosion or incrustation

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The invention discloses a method for protecting an aluminum layer after etching, wherein the aluminum layer after etching has a byproduct of chloride ions. The method for protecting the aluminum layer after etching comprises the step of carrying out surface treatment on the aluminum layer by using reaction gas in a deposition machine. The reactant gas comprises a hydrogen-rich gas.

Description

Post-etch protection method for aluminum layer
Technical Field
The present invention relates to a method for processing an aluminum layer, and more particularly, to a method for protecting an aluminum layer after etching.
Background
After the etching process is performed on the aluminum layer, chloride ion byproducts (e.g., aluminum chloride (AlCl)) are often formed on the aluminum layer 3 )). However, the by-product of chloride ion is prone to electrochemical corrosion (e.g., galvanic corrosion) in an environment with moisture, so that the aluminum layer has a surface arching or swelling phenomenon, which may cause short circuit.
Disclosure of Invention
The invention provides a method for protecting an aluminum layer after etching, which can effectively inhibit electrochemical corrosion.
The invention provides a method for protecting an aluminum layer after etching. The etched aluminum layer has a byproduct of chloride ions. The method for protecting the aluminum layer after etching comprises the step of carrying out surface treatment on the aluminum layer by using reaction gas in a deposition machine. The reaction gas includes hydrogen-rich gas (hydrogen-rich gas).
According to an embodiment of the present invention, in the method for protecting an aluminum layer after etching, a hydrogen-rich gas may react with a byproduct of chloride ions to form a hydrogen chloride gas.
According to an embodiment of the present invention, in the method for protecting an aluminum layer after etching, a carrier gas (carrier gas) of the reaction gas is, for example, nitrogen.
According to an embodiment of the present invention, in the method for protecting an aluminum layer after etching, the hydrogen-rich gas is silane (silane), for example.
According to an embodiment of the present invention, in the method for protecting an aluminum layer after etching, the reaction gas may further include ammonia (NH) 3 ) And a protective layer of aluminum nitride (AlN: H) containing hydrogen is formed on the aluminum layer.
According to an embodiment of the present invention, in the method for protecting the aluminum layer after etching, ammonia gas may be introduced into the deposition tool after or while introducing hydrogen-rich gas into the deposition tool.
According to an embodiment of the present invention, in the method for protecting an aluminum layer after etching, the reaction gas may further include an oxygen-containing gas, so as to form a silicon oxide protection layer on the aluminum layer.
According to an embodiment of the present invention, in the method for protecting an aluminum layer after etching, the oxygen-containing gas is, for example, oxygen (O) 2 ) Dinitrogen monoxide (N) 2 O) or a combination thereof.
According to an embodiment of the present invention, in the method for protecting the aluminum layer after etching, after the hydrogen-rich gas is introduced into the deposition machine, an oxygen-containing gas is introduced into the deposition machine.
According to an embodiment of the present invention, in the method for protecting an aluminum layer after etching, a deposition tool is, for example, a chemical vapor deposition tool.
In view of the above, according to the method for protecting an aluminum layer after etching provided by the present invention, in a deposition machine, a reaction gas is used to perform a surface treatment on the aluminum layer, and the reaction gas includes a hydrogen-rich gas. Therefore, the byproduct of chloride ions can be removed through the hydrogen-rich gas, so that the electrochemical corrosion can be effectively inhibited, and the reliability of the aluminum layer is further improved.
In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanied with figures are described in detail below.
Drawings
Fig. 1A to 1B are schematic diagrams illustrating a method for protecting an aluminum layer after etching according to an embodiment of the invention.
Description of the symbols
100: aluminium layer
102: by-products of chloride ions
104: substrate
106: protective layer of aluminum nitride containing hydrogen
108: silicon oxide protective layer
200: deposition machine
Detailed Description
Fig. 1A to 1B are schematic diagrams illustrating a method for protecting an aluminum layer after etching according to an embodiment of the invention.
Referring to fig. 1A, the etched aluminum layer 100 has a byproduct 102 of chloride ions. The by-product 102 of chloride ion is, for example, aluminum chloride (AlCl) 3 ). The etching gas used in the etching process of the aluminum layer 100 may include a chlorine-containing gas, such as boron trichloride (BCl) 3 ) Chlorine (Cl) 2 ) Or a combination thereof, although the invention is not so limited. In addition, an aluminum layer 100 may be disposed on the substrate 104. One of ordinary skill in the art can adjust the composition of the substrate 104 according to the product requirements, and will not be further described herein.
Referring to fig. 1B, the method for protecting the aluminum layer 100 after etching may include the following steps. In the deposition tool 200, the aluminum layer 100 is surface-treated with a reaction gas, wherein the reaction gas includes a hydrogen-rich gas. The hydrogen-rich gas may remove chloride by-products 102 (e.g., alCl) 3 ) Therefore, the electrochemical corrosion can be effectively inhibited, and the reliability of the aluminum layer 100 is further improved. For example, the hydrogen-rich gas may react with the chloride ion byproduct 102 to form hydrogen chloride gas, thereby removing the chloride ion byproduct 102. The deposition tool 200 is, for example, a chemical vapor deposition tool. The carrier gas of the reaction gas is, for example, nitrogen. The hydrogen-rich gas is, for example, silane. In the present embodiment, in the manufacturing process of removing the by-product 102 of chloride ions, the reaction gas introduced into the deposition tool 200 may be silane, and the carrier gas may be nitrogen, but the invention is not limited thereto.
In addition, the reaction gas may further include ammonia gas, and a hydrogen-containing aluminum nitride (AlN: H) protective layer 106 is formed on the aluminum layer 100. The hydrogen-containing aluminum nitride protective layer 106 stabilizes the surface of the aluminum layer 100. In this embodiment, the ammonia gas may be introduced into the deposition station 200 after the hydrogen-rich gas is introduced into the deposition station 200 or while the hydrogen-rich gas is introduced into the deposition station 200.
For example, in the above-mentioned manufacturing process for removing the by-product 102 of chloride ions, if the by-product 102 of chloride ions is not completely removed, a product containing aluminum, silicon and chlorine is formed on the aluminum layer 100. When ammonia gas is introduced into the deposition tool 200, the ammonia gas is dissociated into ammonium ions (NH) by the plasma 4 + ) And the ammonium ions react with the aluminum, silicon and chlorine containing products to form a hydrogen containing aluminum nitride protective layer 106 on the aluminum layer 100. In the present embodiment, in the manufacturing process of forming the hydrogen-containing aluminum nitride passivation layer 106, the reaction gas introduced into the deposition tool 200 may be silane and ammonia, and the carrier gas may be nitrogen, but the invention is not limited thereto.
In addition, the reaction gas may further include an oxygen-containing gas, and a silicon oxide protective layer 108 is formed on the aluminum layer 100. The silicon oxide passivation layer 108 is used to isolate moisture. In the present embodiment, the silicon oxide protection layer 108 is formed on the hydrogen-containing aluminum nitride protection layer 106, but the invention is not limited thereto. The oxygen-containing gas is, for example, oxygen, nitrous oxide, or a combination thereof. In this embodiment, the silicon oxide protective layer 108 may be formed by introducing an oxygen-containing gas into the deposition tool 200 after introducing a hydrogen-rich gas (e.g., silane) into the deposition tool 200. In addition, the silicon oxide passivation layer 108 may be formed on the hydrogen-containing aluminum nitride passivation layer 106 by introducing an oxygen-containing gas into the deposition tool 200 after introducing a hydrogen-rich gas (e.g., silane) and ammonia gas into the deposition tool 200. In the present embodiment, in the manufacturing process of forming the silicon oxide protection layer 108, the reaction gas introduced into the deposition tool 200 may be silane, ammonia, oxygen and nitrous oxide, and the carrier gas may be nitrogen, but the invention is not limited thereto.
In the present embodiment, the surface treatment of the aluminum layer 100 is performed by a process that simultaneously includes a process for removing the by-product 102 of the chloride ions, a process for forming the aluminum nitride protection layer 106 containing hydrogen, and a process for forming the silicon oxide protection layer 108, but the invention is not limited thereto. It is within the scope of the present invention that the surface treatment of the aluminum layer 100 includes a manufacturing process for removing the by-product 102 of the chloride ion.
For example, in some embodiments, the surface treatment of the aluminum layer 100 may include only a fabrication process that removes the byproducts 102 of the chloride ions. In some embodiments, the surface treatment of the aluminum layer 100 may include only the manufacturing process of removing the byproduct 102 of the chloride ions and the manufacturing process of forming the hydrogen-containing aluminum nitride protection layer 106. In some embodiments, the surface treatment of the aluminum layer 100 may include only the manufacturing process of removing the byproducts 102 of the chloride ions and the manufacturing process of forming the silicon oxide protection layer 108.
Based on the above embodiments, according to the method for protecting the aluminum layer 100 after etching, the aluminum layer 100 is surface-treated with a reaction gas in the deposition tool 200, and the reaction gas includes a hydrogen-rich gas. In this way, the byproduct 102 of chloride ions can be removed by the hydrogen-rich gas, thereby effectively suppressing the electrochemical corrosion and further improving the reliability of the aluminum layer 100.
In summary, in the method for protecting an aluminum layer after etching according to the above embodiments, the hydrogen-rich gas can remove the by-product of the chloride ions, so that the electrochemical corrosion can be effectively inhibited, and the reliability of the aluminum layer can be further improved.
Although the present invention has been described with reference to the above embodiments, it should be understood that the invention is not limited thereto, and that various changes and modifications can be made by those skilled in the art without departing from the spirit and scope of the invention.

Claims (8)

1. A method for protecting an aluminum layer after etching, wherein the aluminum layer after etching has a byproduct of chloride ions thereon, and the method for protecting the aluminum layer after etching comprises:
performing surface treatment on the aluminum layer in a deposition machine by using reaction gas, wherein the reaction gas comprises hydrogen-rich gas comprising silane,
the reaction gas further includes ammonia gas, and a hydrogen-containing aluminum nitride protective layer is formed on the aluminum layer.
2. The method for post-etch protection of an aluminum layer as recited in claim 1, wherein the hydrogen rich gas reacts with a byproduct of the chloride ion to form hydrogen chloride gas.
3. The method for post-etch protection of an aluminum layer as recited in claim 1, wherein the carrier gas for the reactive gas includes nitrogen.
4. The method for post-etch protection of an aluminum layer as recited in claim 1, wherein the ammonia gas is introduced into the deposition tool after or while the hydrogen rich gas is introduced into the deposition tool.
5. The method for post-etch protection of an aluminum layer as recited in claim 1, wherein the reaction gas further comprises an oxygen-containing gas to form a silicon oxide protective layer on the aluminum layer.
6. The method for post-etch protection of an aluminum layer as recited in claim 5, wherein the oxygen-containing gas comprises oxygen, nitrous oxide, or a combination thereof.
7. The method for post-etch protection of an aluminum layer as claimed in claim 5 wherein the oxygen-containing gas is introduced into the deposition tool after the hydrogen-rich gas is introduced into the deposition tool.
8. The method for post-etch protection of an aluminum layer as recited in claim 1, wherein the deposition tool comprises a chemical vapor deposition tool.
CN201911042647.XA 2019-09-20 2019-10-30 Post-etch protection method for aluminum layer Active CN112538628B (en)

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JPH04199825A (en) * 1990-11-29 1992-07-21 Nisshin Hightech Kk Method for anti-corrosion processing after dry etching
US5246888A (en) * 1990-10-30 1993-09-21 Nec Corporation Method of preventing corrosion of aluminum alloys
CN101030531A (en) * 2006-02-27 2007-09-05 应用材料股份有限公司 Method for controlling corrosion of a substrate
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CN102820261A (en) * 2012-08-22 2012-12-12 上海宏力半导体制造有限公司 Aluminum etching method
CN103548116A (en) * 2011-05-20 2014-01-29 应用材料公司 Methods for pretreatment of group III-nitride depositions
CN104916576A (en) * 2014-03-12 2015-09-16 北京北方微电子基地设备工艺研究中心有限责任公司 Processing method of aluminum interconnect layer, cleaning chamber and plasma processing apparatus
CN106148960A (en) * 2016-08-24 2016-11-23 武汉华星光电技术有限公司 The method of aluminum etching
CN107706089A (en) * 2017-09-19 2018-02-16 上海华虹宏力半导体制造有限公司 Wet scrubbing method after aluminum steel dry etching
CN110177903A (en) * 2017-01-17 2019-08-27 恩特格里斯公司 The post-etch residue of high-order node technique back-end processing removes

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US5246888A (en) * 1990-10-30 1993-09-21 Nec Corporation Method of preventing corrosion of aluminum alloys
KR950005351B1 (en) * 1990-10-30 1995-05-23 니쁜 덴끼 가부시끼가이샤 Method of preventing corrosion of aluminum alloys
JPH04199825A (en) * 1990-11-29 1992-07-21 Nisshin Hightech Kk Method for anti-corrosion processing after dry etching
CN101155648A (en) * 2005-01-31 2008-04-02 应用材料公司 Low temperature etchant for treatment of silicon-containing surfaces
CN101030531A (en) * 2006-02-27 2007-09-05 应用材料股份有限公司 Method for controlling corrosion of a substrate
CN103548116A (en) * 2011-05-20 2014-01-29 应用材料公司 Methods for pretreatment of group III-nitride depositions
CN102820261A (en) * 2012-08-22 2012-12-12 上海宏力半导体制造有限公司 Aluminum etching method
CN104916576A (en) * 2014-03-12 2015-09-16 北京北方微电子基地设备工艺研究中心有限责任公司 Processing method of aluminum interconnect layer, cleaning chamber and plasma processing apparatus
CN106148960A (en) * 2016-08-24 2016-11-23 武汉华星光电技术有限公司 The method of aluminum etching
CN110177903A (en) * 2017-01-17 2019-08-27 恩特格里斯公司 The post-etch residue of high-order node technique back-end processing removes
CN107706089A (en) * 2017-09-19 2018-02-16 上海华虹宏力半导体制造有限公司 Wet scrubbing method after aluminum steel dry etching

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TW202113158A (en) 2021-04-01
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