CN112382924B - Double-waveguide distributed feedback semiconductor laser and laser generation method - Google Patents

Double-waveguide distributed feedback semiconductor laser and laser generation method Download PDF

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CN112382924B
CN112382924B CN202011264911.7A CN202011264911A CN112382924B CN 112382924 B CN112382924 B CN 112382924B CN 202011264911 A CN202011264911 A CN 202011264911A CN 112382924 B CN112382924 B CN 112382924B
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waveguide
layer
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distributed feedback
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CN112382924A (en
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刘泽秋
祝宁华
王欣
袁海庆
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Institute of Semiconductors of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser

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  • General Physics & Mathematics (AREA)
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  • Optics & Photonics (AREA)
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  • Semiconductor Lasers (AREA)

Abstract

The present disclosure provides a dual waveguide distributed feedback semiconductor laser, including: the multilayer waveguide substrate comprises an N-surface electrode layer (1), a substrate layer (2), a buffer layer (3), a lower waveguide layer (4), a multi-quantum well active layer (5), an upper waveguide layer (6), a grating layer (7), an etching self-stopping layer (8), a cladding layer (9), an ohmic contact layer (10) and a P-surface electrode layer (11-12), wherein the layers are sequentially superposed, a first channel (15), a second channel (16) and a third channel (17) which are parallel are etched from the surface of the ohmic contact layer (10) to the substrate direction, a first waveguide (13) is formed between the first channel (15) and the second channel (16), a second waveguide (14) is formed between the second channel (16) and the third channel (17), the first waveguide (13) and the second waveguide (14) have the same size, the P-surface electrode layer (11-12) is arranged on the surfaces of the ohmic contact layer (10), the first channel (15) and the third channel (17), is divided into two parts by a second channel (16), and the two parts respectively correspond to the P-surface electrodes of the first waveguide (13) and the second waveguide (14). The laser provided by the disclosure can utilize the distributed feedback grating of the grating layer (7) to perform mode selection, can also utilize the space-time symmetry of the double waveguides to perform mode selection, and has a high side mode suppression ratio.

Description

Double-waveguide distributed feedback semiconductor laser and laser generation method
Technical Field
The present disclosure relates to the field of semiconductor laser technology, and in particular, to a dual-waveguide distributed feedback semiconductor laser with a high side mode suppression ratio.
Background
Electrically driven semiconductor lasers are core devices of high-speed optical communication systems. High-performance light emitting integrated chips or systems require a single longitudinal mode lasing semiconductor laser with good side mode rejection ratio as a light source, and modulation loading and transmission of data are realized through direct modulation or indirect modulation. In general, Distributed Feedback (DFB) semiconductor lasers with high power, high side-mode rejection ratio, and low noise are preferred. However, the need for a higher side mode suppression ratio is always present, because the higher side mode suppression ratio can better resist noise caused by long-distance optical signal transmission, reduce the need for the intermediate-end amplifier, and can better reduce the cost of the optical communication link as a whole.
Disclosure of Invention
In view of the above problems, the present invention provides a dual-waveguide distributed feedback semiconductor laser having a high side mode suppression ratio.
One aspect of the present disclosure provides a dual waveguide distributed feedback semiconductor laser including: the multilayer optical waveguide film comprises an N-surface electrode layer 1, a substrate layer 2, a buffer layer 3, a lower waveguide layer 4, a multiple quantum well active layer 5, an upper waveguide layer 6, a grating layer 7, an etching self-stopping layer 8, a cladding layer 9, an ohmic contact layer 10 and P-surface electrode layers 11-12, wherein the layers are sequentially stacked; a first channel 15, a second channel 16 and a third channel 17 which are parallel to each other are etched on the laser from the surface of the ohmic contact layer 10 to the direction of the substrate, a first waveguide 13 is formed between the first channel 15 and the second channel 16, a second waveguide 14 is formed between the second channel 16 and the third channel 17, and the first waveguide 13 and the second waveguide 14 have the same size; the P-side electrode layers 11 to 12 are disposed on the surfaces of the ohmic contact layer 10, the first trench 15, and the third trench 17, and are divided into two parts by the second trench 16, which correspond to the P-side electrodes of the first waveguide 13 and the second waveguide 14, respectively.
Optionally, the etching depths of the first trench 15, the second trench 16 and the third trench 17 are the same, and the bottom is between the etching self-stop layer 8 and the multiple quantum well active layer 5.
Optionally, the width of the first waveguide 13 and the second waveguide 14 is 1 micron to 3 microns, and the height thereof is 1.5 microns to 3 microns.
Optionally, the width of the second channel 16 is 1 to 3 microns.
Optionally, the width of the first channel 15 and the third channel 17 is 6 to 15 micrometers.
Optionally, the grating layer 7 is a distributed feedback grating, and is etched on the upper waveguide layer 6, and configured to perform mode selection on laser generated by the laser.
Optionally, the backlight surfaces of the first waveguide 13 and the second waveguide 14 are both plated with a high-reflection film, and the light-emitting surfaces are both plated with an antireflection film.
Optionally, the refractive indices of the high reflection film and the antireflection film are 1 to 3.
Optionally, the material of the substrate layer 2 comprises InP; the material of the buffer layer 3 comprises silicon-doped InP; the material of the lower waveguide layer 4 comprises silicon doped InP with a different doping ratio from the buffer layer 3; the material of the multiple quantum well active layer 5 comprises InGaAsP or InAlGaAs; the material of the upper waveguide layer 6 comprises zinc-doped InP; the material etched from the stop layer 8 comprises Zn-doped InGaAsP; the material of the cladding layer 9 comprises Zn-doped InP, and the material of the ohmic contact layer 10 comprises Zn-doped InGaAs; the material of the P-side electrode layer 11-12 comprises titanium platinum gold; the N-face electrode layer 1 is made of gold-germanium-nickel.
Another aspect of the present disclosure provides a laser generation method applied to the dual-waveguide distributed feedback semiconductor laser according to the first aspect, including: respectively current-pumping a first waveguide 13 and a second waveguide 14 of the laser, so that one waveguide operates at a current above a threshold current thereof and shows an energy gain, and the other waveguide operates at a current below the threshold current thereof and shows an energy loss; the current pumping of the first waveguide 13 and the second waveguide 14 is adjusted so that the absolute values of the imaginary parts of the refractive indices of the first waveguide 13 and the second waveguide 14 are equal to generate single longitudinal mode laser light having a high side mode suppression ratio.
The at least one technical scheme adopted in the embodiment of the disclosure can achieve the following beneficial effects:
the distributed feedback semiconductor laser has an existing grating mode selection mechanism and an astronomical-time symmetric mode selection mechanism of a double-optical cavity, and the two mechanisms act simultaneously, so that the existing side mode suppression ratio of the distributed feedback semiconductor laser is greatly improved, noise caused by long-distance optical signal transmission can be better resisted, the requirement on a middle-end amplifier is reduced, and the cost of an optical communication link is better reduced.
Drawings
For a more complete understanding of the present disclosure and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:
fig. 1 schematically illustrates a schematic diagram of a distributed feedback semiconductor laser provided by an embodiment of the present disclosure;
fig. 2 schematically illustrates a schematic diagram of another distributed feedback semiconductor laser provided by an embodiment of the present disclosure;
fig. 3 schematically illustrates a front view of a distributed feedback semiconductor laser of fig. 2 provided by an embodiment of the present disclosure;
fig. 4 schematically illustrates a front view of another distributed feedback semiconductor laser shown in fig. 3 provided by an embodiment of the present disclosure;
fig. 5 schematically illustrates a top view of a distributed feedback semiconductor laser provided by an embodiment of the present disclosure;
fig. 6 schematically illustrates a side view of a distributed feedback semiconductor laser provided by an embodiment of the present disclosure;
fig. 7 schematically shows an electron microscope picture of a distributed feedback semiconductor laser provided by an embodiment of the present disclosure;
description of reference numerals:
a 1-N face electrode layer; 2-a substrate layer; 3-a buffer layer; 4-a lower waveguide layer; 5-multiple quantum well active layer; 6-an upper waveguide layer; 7-a grating layer; 8-etching the self-stop layer; 9-cladding; a 10-ohmic contact layer; an 11-12-P side electrode layer; 13-a first waveguide; 14-a second waveguide; 15-a first channel; 16-a second channel; 17-third channel.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is illustrative only and is not intended to limit the scope of the present disclosure. In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the disclosure. It may be evident, however, that one or more embodiments may be practiced without these specific details. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. The terms "comprises," "comprising," and the like, as used herein, specify the presence of stated features, steps, operations, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, or components.
All terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art unless otherwise defined. It is noted that the terms used herein should be interpreted as having a meaning that is consistent with the context of this specification and should not be interpreted in an idealized or overly formal sense.
As shown in fig. 1, the present disclosure provides a dual waveguide distributed feedback semiconductor laser including: the multilayer optical waveguide film comprises an N-surface electrode layer 1, a substrate layer 2, a buffer layer 3, a lower waveguide layer 4, a multiple quantum well active layer 5, an upper waveguide layer 6, a grating layer 7, an etching self-stopping layer 8, a cladding layer 9, an ohmic contact layer 10 and P-surface electrode layers 11-12, wherein the layers are sequentially stacked; a first channel 15, a second channel 16 and a third channel 17 which are parallel to each other are etched on the laser from the surface of the ohmic contact layer 10 to the direction of the substrate, a first waveguide 13 is formed between the first channel 15 and the second channel 16, a second waveguide 14 is formed between the second channel 16 and the third channel 17, and the first waveguide 13 and the second waveguide 14 are the same in size; the P-side electrode layers 11-12 are provided on the surfaces of the ohmic contact layer 10, the first trench 15, and the third trench 17, and are divided into two parts by the second trench 16, which correspond to the P-side electrodes of the first waveguide 13 and the second waveguide 14, respectively.
The N-face electrode layer 1 is used for forming ohmic contact; the substrate layer 2 is used as a base for preparing other layers; the buffer layer 3 is used for playing a buffer role; the first waveguide 13 layer is used to confine the optical field; the multiple quantum well active layer 5 is used for generating stimulated radiation of light; the second waveguide 14 layer is used to confine the optical field; the grating layer 7 is used for selecting a mode; the etching self-stop layer 8 is used for controlling the etching depth; the cladding layer 9 is used for limiting optical field and carrier diffusion; the ohmic contact layer 10 is used to make ohmic contact with the P-side electrode layers 11 to 12.
In the embodiment of the present disclosure, the grating layer 7 is a distributed feedback grating, and is etched on the upper waveguide layer 6 for performing mode selection on laser generated by a laser.
In the embodiment of the disclosure, the laser has a distributed feedback grating, and can implement a grating mode selection mechanism, and meanwhile, the laser has two identical optical waveguides, and according to the space-time symmetry principle, the two identical optical cavities can make the energy of the spectrum more concentrated in a single longitudinal mode, i.e., exhibit mode selection, increase the side mode suppression ratio, and form single longitudinal mode lasing of the laser, on the premise that one cavity presents energy gain and the other cavity presents energy loss, and when the change of the coupling strength reaches a special point, the two identical optical cavities can make the energy of the spectrum more concentrated in a single longitudinal mode, i.e., exhibit mode selection. The two combined simultaneous actions greatly improve the existing side mode suppression ratio of the distributed feedback semiconductor laser, can better resist noise caused by long-distance optical signal transmission, reduce the requirement on a middle-end amplifier and better reduce the cost of an optical communication link.
In this embodiment, the dual waveguide distributed feedback semiconductor laser has a cavity length of 200 to 1200 microns and a width of 250 to 300 microns.
In the embodiment of the present disclosure, the etching depths of the first trench 15, the second trench 16, and the third trench 17 are the same, and the bottom is between the etching self-stop layer 8 and the multiple quantum well active layer 5. The grating layer 7 is obtained by adopting a method of holographic exposure or electron beam exposure and etching the second waveguide 14 layer.
Fig. 1 and 3 schematically show a dual-waveguide distributed feedback semiconductor laser, wherein a first channel 15, a second channel 16 and a third channel 17 are etched to the top end of an automatic stop layer, and a first waveguide 13 and a second waveguide 14 which are formed are optical waveguides with weak limitation on an optical field. Fig. 2 and 4 schematically show another dual-waveguide distributed feedback semiconductor laser, wherein a first channel 15, a second channel 16 and a third channel 17 are etched to the multi-quantum well active layer 5, and a first waveguide 13 and a second waveguide 14 are formed to be optical waveguides which have the effect of limiting the intensity of optical field. In addition, fig. 5 to 7 schematically show a top view, a side view and an electron microscope picture of a distributed feedback semiconductor laser provided by the embodiment of the disclosure, wherein arrows in fig. 5 and 6 indicate light emitting directions of laser light.
Optionally, the first waveguide 13 and the second waveguide 14 have a width of 1 micron to 3 microns and a height of 1.5 microns to 3 microns. Wherein, when the first waveguide 13 is an optical waveguide which has weak limitation effect on the light field, the height of the waveguide is 1.5 to 2.5 micrometers; when the second waveguide 14 is an optical waveguide that acts to limit the intensity of the optical field, the height of the waveguide is 2 to 3 micrometers.
Optionally, the width of the second channel 16 is 1 to 3 microns, and the width of the first and third channels 15 and 17 is 6 to 15 microns. The first waveguide 13 and the second waveguide 14 formed among the first channel 15, the second channel 16 and the third channel 17 can realize the limiting effect on the optical field, and a single transmission mode output with a single intensity distribution is obtained.
In the embodiment of the present disclosure, the backlight surfaces of the first waveguide 13 and the second waveguide 14 are both plated with a high reflection film, and the light emitting surfaces are both plated with an antireflection film.
Alternatively, the refractive index of the high-reflection film and the antireflection film is 1 to 3. Materials for preparing the high reflection film and the antireflection film can comprise SiO2, Al2O3 and MgF2, and the thickness of the materials is 0.5-3 microns.
In the disclosed embodiment, the material of the substrate layer 2 comprises InP; the material of the buffer layer 3 includes silicon-doped InP; the lower waveguide layer 4 is made of silicon-doped InP, the doping proportion of the lower waveguide layer 4 is different from that of the buffer layer 3, the buffer layer 3 is made of InP material with high doped Si, and the lower waveguide layer 4 is made of InP material with lower doped Si; the material of the multiple quantum well active layer 5 comprises InGaAsP or InAlGaAs; the material of the upper waveguide layer 6 comprises zinc doped InP; the material etched from the stop layer 8 comprises Zn-doped InGaAsP; the material of the cladding layer 9 comprises Zn-doped InP, and the material of the ohmic contact layer 10 comprises Zn-doped InGaAs; the material of the P-side electrode layers 11-12 comprises titanium platinum gold; the material adopted by the N-face electrode layer 1 comprises gold germanium nickel.
In the disclosed embodiment, the multiple quantum well active layer 5 has multiple quantum well layers and barrier layers, and the lasing wavelength is 1310 nm or 1550 nm or other communication bands. The laser adopts a quantum well structure to increase differential gain, and compared with a common double-heterostructure laser, the quantum well laser has the advantages of low threshold, large output power and high modulation rate. Tensile or compressive strain is introduced in the quantum well structure to increase differential gain, and the layer thicknesses of the well and barrier are optimized to reduce carrier transit time through the optical confinement layer and carrier escape from the active region.
In the embodiment of the present disclosure, the first waveguide 13 and the second waveguide 14 are obtained by performing photolithography on a photoresist to obtain a first groove, a second groove, and a third groove. After the first waveguide 13 and the second waveguide 14 are etched, referring to fig. 3 and 4, a P-side electrode layer 11-12 is plated on the ohmic contact layer 10 and the surfaces of the first groove and the third groove by a magnetron sputtering method, wherein the P-side electrode layer 11-12 is not grown in the second groove, so that the first waveguide 13 and the second waveguide 14 are mutually independent, the P-side electrode layer 11-12 is separated into two independent electrodes 11-12, and two independent P-side electrodes capable of respectively controlling the first waveguide 13 and the second waveguide 14 are formed.
The present disclosure also provides a laser generating method, which is applied to the dual-waveguide distributed feedback semiconductor laser, including S210 to S220.
S210, the first waveguide 13 and the second waveguide 14 of the laser are respectively current-pumped, so that the operating current of one waveguide is above the threshold current thereof and shows energy gain, and the operating current of the other waveguide is below the threshold current thereof and shows energy loss.
S220, adjusting the current pumps of the first waveguide 13 and the second waveguide 14 to equalize the absolute values of the imaginary parts of the refractive indexes of the first waveguide 13 and the second waveguide 14, so as to generate a single longitudinal mode laser having a high side mode suppression ratio.
In the embodiment of the present disclosure, when the laser is operated, the first waveguide 13 and the second waveguide 14 are respectively current-pumped, so that the operating current of one of the waveguides is above the threshold current thereof, and the waveguide exhibits energy gain, i.e. the refractive index of the waveguide is ngain＝n0+in1Wherein n is1> 0, and the other waveguide operating current is below its threshold current, showing energy loss, i.e. when the waveguide refractive index is nloss＝n0+in2Wherein n is2Is less than 0. When the current on both sides is adjusted to n1＝-n2The first waveguide 13 and the second waveguide 14 are brought into the desired operationThe state is that the energy of the spectrum is concentrated in a single longitudinal mode, namely, mode selection is shown, the side mode suppression ratio is increased, and single longitudinal mode laser emission of laser is formed. The high side mode rejection ratio can better resist noise caused by long-distance optical signal transmission, reduce the requirement on the middle-end amplifier and better reduce the cost of an optical communication link on the whole.
Those skilled in the art will appreciate that various combinations and/or combinations of features recited in the various embodiments and/or claims of the present disclosure can be made, even if such combinations or combinations are not expressly recited in the present disclosure. In particular, various combinations and/or combinations of the features recited in the various embodiments and/or claims of the present disclosure may be made without departing from the spirit or teaching of the present disclosure. All such combinations and/or associations are within the scope of the present disclosure.
While the disclosure has been shown and described with reference to certain exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the disclosure as defined by the appended claims and their equivalents. Accordingly, the scope of the present disclosure should not be limited to the above-described embodiments, but should be defined not only by the appended claims, but also by equivalents thereof.

Claims (9)

1. A dual waveguide distributed feedback semiconductor laser comprising:
the multilayer structure comprises an N-surface electrode layer (1), a substrate layer (2), a buffer layer (3), a lower waveguide layer (4), a multiple quantum well active layer (5), an upper waveguide layer (6), a grating layer (7), an etching self-stopping layer (8), a cladding layer (9), an ohmic contact layer (10) and P-surface electrode layers (11-12), wherein the layers are sequentially stacked;
wherein, a first channel (15), a second channel (16) and a third channel (17) which are parallel are etched on the laser from the surface of the ohmic contact layer (10) to the direction of the substrate layer (2), a first waveguide (13) is formed between the first channel (15) and the second channel (16), a second waveguide (14) is formed between the second channel (16) and the third channel (17), and the first waveguide (13) and the second waveguide (14) have the same size;
the P-surface electrode layers (11-12) are arranged on the surfaces of the ohmic contact layer (10), the first channel (15) and the third channel (17), are divided into two parts by the second channel (16), and respectively correspond to P-surface electrodes of the first waveguide (13) and the second waveguide (14);
the grating layer (7) is a distributed feedback grating, is etched on the upper waveguide layer (6), and is used for selecting a mode of laser generated by the laser.
2. A laser according to claim 1, characterized in that the first (15), second (16) and third (17) channels are etched to the same depth with the bottom between the etched self-stop layer (8) and the multiple quantum well active layer (5).
3. The laser according to claim 2, characterized in that the first and second waveguides (13, 14) have a width of 1 to 3 microns and a height of 1.5 to 3 microns.
4. A laser according to claim 2, characterized in that the width of the second channel (16) is 1 to 3 micrometers.
5. A laser according to claim 2, characterized in that the width of the first channel (15) and the third channel (17) is 6-15 micrometers.
6. The laser device according to claim 1, wherein the back light surfaces of the first waveguide (13) and the second waveguide (14) are coated with a high reflection film, and the light emitting surfaces are coated with an antireflection film.
7. The laser device according to claim 6, wherein the refractive index of the high-reflection film and the antireflection film is 1 to 3.
8. A laser according to claim 1, characterized in that the material of the substrate layer (2) comprises InP; the material of the buffer layer (3) comprises silicon-doped InP; the material of the lower waveguide layer (4) comprises silicon doped InP, and the doping ratio is different from that of the buffer layer (3); the material of the multi-quantum well active layer (5) comprises InGaAsP or InAlGaAs; the material of the upper waveguide layer (6) comprises zinc-doped InP; the material etched from the stop layer (8) comprises Zn-doped InGaAsP; the material of the cladding layer (9) comprises Zn-doped InP, and the material of the ohmic contact layer (10) comprises Zn-doped InGaAs; the material of the P-side electrode layers (11-12) comprises titanium platinum gold; the N-face electrode layer (1) is made of gold-germanium-nickel.
9. A laser light generating method applied to the dual waveguide distributed feedback semiconductor laser as claimed in claims 1 to 8, comprising:
respectively current-pumping a first waveguide (13) and a second waveguide (14) of the laser, so that one waveguide operates at a current above a threshold current thereof and exhibits energy gain, and the other waveguide operates at a current below the threshold current thereof and exhibits energy loss;
adjusting the current pumping of the first waveguide (13) and the second waveguide (14) such that the absolute values of the imaginary parts of the refractive indices of the first waveguide (13) and the second waveguide (14) are equal to produce single longitudinal mode laser light having a high side mode suppression ratio.
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