CN112289771B - Pattern manufacturing method and pattern layout - Google Patents

Pattern manufacturing method and pattern layout Download PDF

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CN112289771B
CN112289771B CN202011312283.5A CN202011312283A CN112289771B CN 112289771 B CN112289771 B CN 112289771B CN 202011312283 A CN202011312283 A CN 202011312283A CN 112289771 B CN112289771 B CN 112289771B
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pad structure
vertical portion
pattern
width
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CN112289771A (en
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张钦福
冯立伟
童宇诚
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Fujian Jinhua Integrated Circuit Co Ltd
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Fujian Jinhua Integrated Circuit Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation

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Abstract

The application provides a pattern manufacturing method and a pattern layout, wherein the method comprises the following steps: forming a pre-pattern on a substrate, wherein the pre-pattern comprises a plurality of pre-structures arranged at intervals along a first direction, each pre-structure comprises an annular structure, a first bonding pad structure and a second bonding pad structure, each annular structure comprises a first vertical part, a first horizontal part, a second vertical part and a second horizontal part which are sequentially connected end to end, the first horizontal part is in contact with the first bonding pad structure, and the second horizontal part is in contact with the second bonding pad structure; and etching the pre-pattern to remove the first part and the second part of the annular structure, so that the pre-structure forms a spacing structure, and the spacing structure comprises a first lead and a second lead which are not connected with each other, wherein the first lead comprises a first pad structure, at least a part of a first horizontal part and at least a part of a first vertical part, and the second lead comprises a second pad structure, at least a part of a second horizontal part and at least a part of a second vertical part.

Description

Pattern manufacturing method and pattern layout
Technical Field
The present invention relates to the field of semiconductors, and in particular, to a pattern manufacturing method and a pattern layout.
Background
With the rapid growth of the semiconductor industry, there is a trend to integrate semiconductor devices in a limited area of a semiconductor substrate. Typically, attempts to increase the density of semiconductor devices have resulted in the formation of fine patterns. Various techniques have been proposed for forming fine patterns having a critical dimension of a nanometer scale, for example, a size from about several nanometers to about several tens of nanometers. However, the prior art has a complicated process for forming fine patterns, which results in a low yield of fine patterns.
The above information disclosed in this background section is only for enhancement of understanding of the background of the technology described herein and, therefore, certain information may be included in the background that does not form the prior art that is already known in this country to a person of ordinary skill in the art.
Disclosure of Invention
The present disclosure is directed to a method for fabricating a pattern and a pattern layout, so as to solve the problem of low yield of fine pattern process due to complicated process for fabricating fine pattern in the prior art.
In order to achieve the above object, according to one aspect of the present application, there is provided a method of fabricating a pattern, including: forming a pre-pattern on a substrate, wherein the pre-pattern comprises a plurality of pre-structures arranged at intervals along a first direction, each pre-structure comprises an annular structure, a first bonding pad structure and a second bonding pad structure, the first bonding pad structure and the second bonding pad structure are respectively positioned at two ends of the annular structure and are in contact with the annular structure, the first direction is vertical to the thickness direction of the pattern, the annular structure comprises a first vertical part, a first horizontal part, a second vertical part and a second horizontal part which are sequentially connected end to end, the first horizontal part is in contact with the first bonding pad structure, and the second horizontal part is in contact with the second bonding pad structure; etching the pre-pattern to remove the first portion and the second portion of the ring structure, so that the pre-structure forms a spacer structure including two unconnected conductive lines, namely a first conductive line and a second conductive line, wherein the first conductive line includes the first pad structure, at least a portion of the first horizontal portion, and at least a portion of the first vertical portion, and the second conductive line includes the second pad structure, at least a portion of the second horizontal portion, and at least a portion of the second vertical portion.
Optionally, etching the pre-pattern to remove the first and second portions of the ring structure such that the pre-structure forms a spacer structure, comprising: forming a sacrificial layer on the pre-pattern, the sacrificial layer having a plurality of openings and barrier portions, the openings leaving the first and second portions exposed; etching to remove the first part and the second part to form the interval structure; and removing the sacrificial layer.
Optionally, forming a pre-pattern on the substrate comprises: forming a plurality of grooves on the substrate, wherein the grooves are arranged at intervals along the first direction, the grooves comprise a first sub-groove, a second sub-groove and a third sub-groove, and the second sub-groove and the third sub-groove are respectively positioned at two ends of the first sub-groove and are in contact with the first sub-groove; and arranging a filling material in the groove, so that a ring structure is formed on the side wall of the first sub-groove, so that the second sub-groove forms the first bonding pad structure, and so that the third sub-groove forms the second bonding pad structure.
Optionally, a width of the first pad structure in a second direction is greater than three times a width of the first upright portion in the first direction, a width of the second pad structure in the second direction is greater than three times a width of the second upright portion in the first direction, and the second direction is perpendicular to the first direction.
Optionally, the first wire further includes at least a portion of the second upright portion, and the second wire further includes at least a portion of the first upright portion.
Optionally, a width of the first vertical portion in the first direction is greater than one-half of a width of the first pad structure in the first direction, and a width of the second vertical portion in the first direction is greater than one-half of a width of the second pad structure in the first direction.
Optionally, the first pad structure and the second pad structure are the same or different.
In order to achieve the above object, according to another aspect of the present application, there is provided a pattern layout fabricated by any one of the fabrication methods.
In order to achieve the above object, according to yet another aspect of the present application, there is also provided a pattern layout including a substrate and a plurality of spacer structures, the plurality of spacer structures being located on a surface of the substrate, the plurality of spacer structures being arranged at intervals along a first direction, the first direction being perpendicular to a thickness direction of the pattern, the spacer structures including two unconnected conductive lines, which are a first conductive line and a second conductive line, respectively, wherein the first conductive line includes a first pad structure, a first sub-horizontal portion and a first sub-vertical portion, and the second conductive line includes a second pad structure, a second sub-horizontal portion and a second sub-vertical portion, wherein the first sub-horizontal portion is in contact with the first pad structure, and the second sub-horizontal portion is in contact with the second pad structure.
Optionally, the first wire further comprises a third sub-vertical portion, the second wire further comprises a fourth sub-vertical portion, the width of the third sub-vertical portion is the same as that of the second sub-vertical portion, the central axis of the third sub-vertical portion coincides with the central axis of the second sub-vertical portion, the fourth sub-vertical portion is the same as that of the first sub-vertical portion, and the central axis of the fourth sub-vertical portion coincides with the central axis of the first sub-vertical portion.
Optionally, the third sub-vertical portion is the same as the fourth sub-vertical portion.
Optionally, a width of the first pad structure in a second direction is greater than three times a width of the first sub-vertical portion in the first direction, a width of the second pad structure in the second direction is greater than three times a width of the second sub-vertical portion in the first direction, and the second direction is perpendicular to the first direction.
Optionally, a width of the first sub-vertical portion in the first direction is greater than one-half of a width of the first pad structure in the first direction, and a width of the second sub-vertical portion in the first direction is greater than one-half of a width of the second pad structure in the first direction.
Optionally, the spacing distances of the plurality of spacing structures in the first direction are the same.
Optionally, the first sub-vertical portion and the second sub-vertical portion are the same, and the first sub-horizontal portion is the same as the first sub-horizontal portion.
The application provides a method for making a pattern, the method for making the pattern comprises forming a pre-pattern on a substrate, the pre-pattern comprises a plurality of pre-structures arranged at intervals along a first direction, the pre-structures comprise the ring-shaped structures, a first pad structure and a second pad structure, the ring-shaped structures comprise the first vertical part, the first horizontal part, the second vertical part and the second horizontal part which are sequentially connected end to end, removing a first part and a second part of the ring-shaped structures by etching the pre-pattern, so that the pre-structures form the first conducting wire and the second conducting wire which are not connected with each other, the first conducting wire comprises the first pad structure, at least part of the first horizontal part and at least part of the first vertical part, and the second conducting wire comprises the second pad structure, The pattern can be easily formed by at least part of the second horizontal part and at least part of the second vertical part, the manufacturing process is simple, the high process yield of the pattern is ensured, and the problem that the process yield of the fine pattern is low due to the fact that the existing manufacturing process of the fine pattern is complex is solved.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this application, illustrate embodiments of the application and, together with the description, serve to explain the application and are not intended to limit the application. In the drawings:
FIG. 1 shows a schematic flow diagram generated by a method of fabricating a pattern according to an embodiment of the present application;
FIG. 2 shows a schematic diagram of a pre-pattern according to an embodiment of the present application;
FIG. 3 shows a schematic view of a pattern according to an embodiment of the present application;
fig. 4 to 5 are schematic diagrams illustrating a process of forming a pattern according to an embodiment of the present application;
FIG. 6 shows a schematic view of a pattern according to a specific embodiment of the present application; and
FIG. 7 shows a schematic view of a pattern according to a specific embodiment of the present application.
Wherein the figures include the following reference numerals:
10. pre-structuring; 100. a first pad structure; 101. a second pad structure; 102. a first vertical portion; 103. a first horizontal portion; 104. a second vertical portion; 105. a second horizontal portion; 106. an annular structure; 107. a first conductive line; 108. a second conductive line; 109. a first sub-vertical portion; 110. a second sub-vertical portion; 111. a first sub-horizontal portion; 112. a second sub-horizontal portion; 113. a third sub-vertical portion; 114. a fourth sub-vertical portion; 20. a sacrificial layer; 200. an opening; 201. a blocking portion; 30. a groove; 300. a first sub-groove; 301. a second sub-groove; 302. a third sub-groove; 40. a substrate.
Detailed Description
It should be noted that the following detailed description is exemplary and is intended to provide further explanation of the disclosure. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments according to the present application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present. Also, in the specification and claims, when an element is described as being "connected" to another element, the element may be "directly connected" to the other element or "connected" to the other element through a third element.
As described in the background of the invention, the prior art has a complicated fine pattern manufacturing process, resulting in a low yield of fine patterns.
According to an exemplary embodiment of the present application, there is provided a method for manufacturing a pattern, as shown in fig. 1, the method for manufacturing a pattern includes:
step S101, forming a pre-pattern on a substrate 40, as shown in fig. 2, where the pre-pattern includes a plurality of pre-structures 10 arranged at intervals along a first direction, the pre-structure includes a ring-shaped structure 106, a first pad structure 100 and a second pad structure 101, the first pad structure 100 and the second pad structure 101 are respectively located at two ends of the ring-shaped structure 106 and are in contact with the ring-shaped structure 106, the first direction is perpendicular to a thickness direction of the pattern, the ring-shaped structure 106 includes a first vertical portion 102, a first horizontal portion 103, a second vertical portion 104 and a second horizontal portion 105 connected end to end in sequence, where the first horizontal portion 103 is in contact with the first pad structure 100, and the second horizontal portion 105 is in contact with the second pad structure 101;
step S102, etching the pre-pattern, and removing a first portion and a second portion of the ring structure 106, so that the pre-structure forms a spacer structure, as shown in fig. 3, the spacer structure includes two unconnected conductive lines, i.e., a first conductive line 107 and a second conductive line 108, wherein the first conductive line 107 includes the first pad structure 100, at least a portion of the first horizontal portion, and at least a portion of the first vertical portion, and the second conductive line 108 includes the second pad structure 101, at least a portion of the second horizontal portion, and at least a portion of the second vertical portion.
The method for fabricating the pattern includes forming a pre-pattern on a substrate, the pre-pattern including a plurality of the pre-structures arranged at intervals along a first direction, the pre-structure including the ring-shaped structure, a first pad structure and a second pad structure, the ring-shaped structure including the first vertical portion, the first horizontal portion, the second vertical portion and the second horizontal portion connected end to end in sequence, removing a first portion and a second portion of the ring-shaped structure by etching the pre-pattern so that the pre-structure forms the first conductive line and the second conductive line which are not connected to each other, the first conductive line including the first pad structure, at least a portion of the first horizontal portion and at least a portion of the first vertical portion, the second conductive line including the second pad structure, at least a portion of the second horizontal portion and at least a portion of the second vertical portion, the pattern can be easily formed, the manufacturing process is simple, the high process yield of the pattern is guaranteed, and the problem that the process yield of the fine pattern is low due to the fact that the existing manufacturing process of the fine pattern is complex is solved.
According to a specific embodiment of the present application, as shown in fig. 4, etching the pre-pattern to remove the first portion and the second portion of the ring structure 106 so that the pre-structure forms a spacer structure includes: forming a sacrificial layer 20 on the pre-pattern, the sacrificial layer 20 having a plurality of openings 200 and barrier portions 201, the openings 200 exposing the first portions and the second portions; etching to remove the first part and the second part to form the spacing structure; the sacrificial layer 20 is removed. In the method, the sacrificial layer is formed on the pre-structure, the sacrificial layer is provided with a plurality of openings and the blocking parts, and the openings expose the first part and the second part, so that the first part and the second part can be removed relatively simply, and then the sacrificial layer is removed to form a plurality of spacing structures, thereby further ensuring that the manufacturing process of the spacing structures is relatively simple.
In order to further ensure that the forming process of the pattern is simple and the manufacturing yield of the pattern is high, according to another specific embodiment of the present application, the forming a pre-pattern on the substrate 40 includes: forming a plurality of grooves 30 on the substrate 40, as shown in fig. 5, the plurality of grooves 30 being arranged at intervals along the first direction, the grooves 30 including a first sub-groove 300, a second sub-groove 301 and a third sub-groove 302, the second sub-groove 301 and the third sub-groove 302 being respectively located at two ends of the first sub-groove 300 and contacting with the first sub-groove 300; filling material is disposed in the groove, so that a ring structure is formed on the sidewall of the first sub-groove 300, the second sub-groove 301 forms the first pad structure 100, and the third sub-groove 302 forms the second pad structure 101, resulting in the pre-pattern shown in fig. 2.
In order to further ensure that the forming process of the pattern is simple and the manufacturing yield of the pattern is high, according to another specific embodiment of the present application, the method for forming a pre-pattern on a substrate includes: forming a plurality of filling layers on the substrate, and forming a barrier layer on the filling layers, wherein the barrier layer is provided with a plurality of sub-openings, and the sub-openings expose the third part, the fourth part and the fifth part of the filling layers; etching to remove the third portion, the fourth portion and the fifth portion to form the first pad structure, the second pad structure and the ring structure; the barrier layer is removed to form a pre-pattern as shown in fig. 2. The person skilled in the art can flexibly select the method for forming the pre-pattern according to the actual situation.
In practical applications, as shown in fig. 3, a width W1 of the first pad structure in the second direction is greater than three times a width W2 of the first vertical portion in the first direction, and a width W3 of the second pad structure in the second direction is greater than three times a width W4 of the second vertical portion in the first direction, the second direction being perpendicular to the first direction. Therefore, the contact area of the first bonding pad structure and the second bonding pad structure is ensured to be large, the contact resistance value is ensured to be small, and the influence of the contact resistance value on the performance of the device is avoided.
In another specific embodiment of the present application, as shown in fig. 6, the first conductive wire further includes at least a portion of the second vertical portion, and the second conductive wire further includes at least a portion of the first vertical portion. Therefore, the process of forming the first conducting wire and the second conducting wire is further ensured to be simple, the first conducting wire and the second conducting wire can be obtained easily, and the high manufacturing yield of the patterns is further ensured.
In order to easily form the wire structure and ensure high process yield of the pattern, in practical applications, the edge of the first pad structure 100 of the first wire 107 is aligned with the edge of the first vertical portion away from the second vertical portion, or the edge of the first pad structure 100 is aligned with the edge of the second vertical portion away from the first vertical portion, and the edge of the second pad structure 101 of the second wire 108 is aligned with the edge of the first vertical portion away from the second vertical portion, or the edge of the second pad structure 101 is aligned with the edge of the second vertical portion away from the first vertical portion, and fig. 7 shows that the edge of the first pad structure 100 is aligned with the edge of the second vertical portion away from the first vertical portion, and the edge of the second pad structure 101 is aligned with the edge of the first vertical portion away from the second vertical portion.
In still another specific embodiment of the present application, as shown in fig. 3, a width W2 of the first vertical portion in the first direction is greater than one-half of a width W5 of the first pad structure in the first direction, and a width W4 of the second vertical portion in the first direction is greater than one-half of a width W6 of the second pad structure in the first direction. The first pad structure is formed by disposing a filling material in the second sub-groove, the filling material extending to the second sub-groove, the second pad structure is formed by disposing a filling material in the third sub-groove, the filling material extending to the third sub-groove, the method of forming the first pad structure by controlling a width of the first vertical portion in the first direction to be greater than one-half a width of the first pad structure in the first direction, and a width of the second vertical portion in the first direction to be greater than one-half a width of the second pad structure in the first direction, that is, controlling a width of the first vertical portion to be greater than one-half a width of the second sub-groove, and a width of the second vertical portion to be greater than one-half a width of the third sub-groove, the second sub-groove and the third sub-groove can be filled with the filling material, and the forming process of the first pad structure and the second pad structure is further ensured to be easy.
In another specific embodiment, the method for manufacturing the pattern may further include: forming a plurality of closed patterns on a substrate, the plurality of closed patterns being arranged at intervals in a first direction, a distance between any two adjacent closed patterns being the same, a width of each of the plurality of closed patterns in the first direction being the same and D1, the first direction being a short side direction of the closed pattern; forming a first pad structure and a second pad structure, wherein the first pad structure and the second pad structure are respectively connected with two end points of a long side of the closed pattern in a contact manner, the width of the first pad structure and the width of the second pad structure in the first direction are the same, and the first pad structure and the second pad structure are D2, D1 is more than D2, and D1 is less than 2 multiplied by D2; the closed pattern is divided, and the divided closed pattern, the first pad structure, and the second pad structure form the spacer structure.
In practical applications, the first pad structure and the second pad structure may be the same or different. The same first pad structure and second pad structure, or different widths of the first pad structure and second pad structure may be provided by those skilled in the art according to practical situations.
In an exemplary embodiment of the present application, a pattern layout is provided, and the pattern layout is manufactured by any one of the above manufacturing methods.
The pattern layout is manufactured by any one of the manufacturing methods, the pattern layout can be easily formed, the manufacturing process is simple, the high process yield of the pattern is guaranteed, and the problem that the process yield of the fine pattern is low due to the fact that the existing manufacturing process of the fine pattern is complex is solved. Meanwhile, in the pattern layout manufactured by the method, the contact area of the first pad structure and the second pad structure is large, so that the contact resistance is small, and the performance of the device is good.
According to another exemplary embodiment of the present invention, a pattern layout is provided, as shown in fig. 3, which includes a substrate 40 and a plurality of spacer structures, the plurality of spacer structures are located on a surface of the substrate 40, the plurality of spacer structures are arranged at intervals along a first direction, the first direction is perpendicular to a thickness direction of the pattern, the spacer structures include two non-connected conductive lines, i.e., a first conductive line 107 and a second conductive line 108, wherein the first conductive line 107 includes a first pad structure 100, a first sub-horizontal portion 111 and a first sub-vertical portion 109, the second conductive line 108 includes a second pad structure 101, a second sub-horizontal portion 112 and a second sub-vertical portion 110, the first sub-horizontal portion 111 contacts the first pad structure 100, and the second sub-horizontal portion 112 contacts the second pad structure 101.
The pattern layout comprises a substrate and a plurality of interval structures, wherein the intervals are positioned on the surface of the substrate, the interval structures comprise two leads which are not connected with each other and are respectively a first lead and a second lead, the first lead comprises a first pad structure, a first sub-horizontal part and a first sub-vertical part, the second lead comprises a second pad structure, a second sub-horizontal part and a second sub-vertical part, the first sub-horizontal part is contacted with the first pad structure, and the second sub-horizontal part is contacted with the second pad structure.
In a specific embodiment of the present application, the first conductive line 107 further includes a third sub-vertical portion 113, and the second conductive line 108 further includes a fourth sub-vertical portion 114, so as to obtain a pattern layout as shown in fig. 6. The third sub-vertical portion 113 has the same width as the second sub-vertical portion 110, a central axis of the third sub-vertical portion 113 coincides with a central axis of the second sub-vertical portion 110, the fourth sub-vertical portion 114 has the same width as the first sub-vertical portion 109, and a central axis of the fourth sub-vertical portion 114 coincides with a central axis of the first sub-vertical portion 109. That is, the end of the third sub-vertical portion coincides with the end of the second sub-vertical portion, and the end of the fourth sub-vertical portion coincides with the end of the first sub-vertical portion, so that the process of the pattern layout is further simplified, and the high yield of the pattern layout is further ensured.
In an actual application process, the third sub-vertical portion is the same as the fourth sub-vertical portion. Of course, the third sub-vertical portion and the fourth sub-vertical portion may be different. Those skilled in the art can flexibly select the desired process capability.
In order to easily form the wire structure and ensure high process yield of the pattern, in practical applications, an edge of the first pad structure 100 of the first wire 107 is aligned with an edge of the first sub-vertical portion 109, which is far from the third sub-vertical portion 113, or an edge of the first pad structure 100 is aligned with an edge of the third sub-vertical portion 113, which is far from the first sub-vertical portion 109, and an edge of the second pad structure 101 of the second wire 108 is aligned with an edge of the fourth sub-vertical portion 114, which is far from the second sub-vertical portion 110, or an edge of the second pad structure 101 is aligned with an edge of the second sub-vertical portion 110, which is far from the fourth sub-vertical portion 114, and fig. 7 shows that an edge of the first pad structure 100 is aligned with an edge of the third sub-vertical portion 113, which is far from the first sub-vertical portion 109, a case where an edge of the second pad structure 101 and an edge of the fourth vertical sub-portion 114, which is far from the second vertical sub-portion 110, are on the same straight line.
According to another specific embodiment of the present application, as shown in fig. 3, a width W1 of the first pad structure in the second direction is greater than three times a width W2 of the first sub-vertical portion in the first direction, a width W3 of the second pad structure in the second direction is greater than three times a width W4 of the second sub-vertical portion in the first direction, and the second direction is perpendicular to the first direction. Therefore, the contact area of the first bonding pad structure is large, the contact area of the second bonding pad structure is large, the contact resistance of the wire is small, and the performance of the device is good.
In order to further ensure a high process yield of the pattern layout and to obtain the pattern layout more easily, according to another specific embodiment of the present application, a width of the first sub-vertical portion in the first direction is greater than one-half of a width of the first pad structure in the first direction, and a width of the second sub-vertical portion in the first direction is greater than one-half of a width of the second pad structure in the first direction.
In order to further ensure the better performance of the device, in another specific embodiment of the present application, the spacing distances of the plurality of spacing structures in the first direction are the same.
In practical applications, the first pad structure and the second pad structure may be the same or different. The same first pad structure and second pad structure, or different widths of the first pad structure and second pad structure may be provided by those skilled in the art according to practical situations.
In another specific embodiment of the present application, the first sub-vertical portion is the same as the second sub-vertical portion, and the first sub-horizontal portion is the same as the first sub-horizontal portion. Of course, the first sub-vertical portion and the second sub-vertical portion may be different, and the first sub-horizontal portion may be different.
From the above description, it can be seen that the above-described embodiments of the present application achieve the following technical effects:
1) the present application provides a method for forming a pattern, the method for forming the pattern includes forming a pre-pattern on a substrate, the pre-pattern includes a plurality of the pre-structures arranged at intervals along a first direction, the pre-structure includes the ring-shaped structure, a first pad structure and a second pad structure, the ring-shaped structure includes the first vertical portion, the first horizontal portion, the second vertical portion and the second horizontal portion connected end to end in sequence, the pre-pattern is etched to remove a first portion and a second portion of the ring-shaped structure, so that the pre-structure forms the first conductive line and the second conductive line which are not connected to each other, the first conductive line includes the first pad structure, at least a portion of the first horizontal portion and at least a portion of the first vertical portion, and the second conductive line includes the second pad structure, The pattern can be easily formed by at least part of the second horizontal part and at least part of the second vertical part, the manufacturing process is simple, the high process yield of the pattern is ensured, and the problem that the process yield of the fine pattern is low due to the fact that the existing manufacturing process of the fine pattern is complex is solved.
2) The application also provides a pattern layout, which comprises a substrate and a plurality of interval structures, wherein a plurality of intervals are positioned on the surface of the substrate, the spacing structure comprises two unconnected leads, namely a first lead and a second lead, wherein the first wire comprises a first pad structure, a first sub-horizontal portion and a first sub-vertical portion, the second conductive line includes a second pad structure, a second sub-horizontal portion, and a second sub-vertical portion, the first sub-horizontal portion being in contact with the first pad structure, the second sub-horizontal portion being in contact with the second pad structure, the pattern layout can be formed easily, the manufacturing process is simple, the high process yield of the pattern layout is guaranteed, and the problem that the process yield of fine patterns is low due to the fact that the existing manufacturing process of fine patterns is complex is solved.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims (15)

1. A method of making a pattern, comprising:
forming a pre-pattern on a substrate, wherein the pre-pattern comprises a plurality of pre-structures arranged at intervals along a first direction, each pre-structure comprises an annular structure, a first bonding pad structure and a second bonding pad structure, the first bonding pad structure and the second bonding pad structure are respectively positioned at two ends of the annular structure and are in contact with the annular structure, the first direction is vertical to the thickness direction of the pattern, the annular structure comprises a first vertical part, a first horizontal part, a second vertical part and a second horizontal part which are sequentially connected end to end, the first horizontal part is in contact with the first bonding pad structure, and the second horizontal part is in contact with the second bonding pad structure;
etching the pre-pattern to remove the first portion and the second portion of the ring structure, so that the pre-structure forms a spacer structure including two unconnected conductive lines, namely a first conductive line and a second conductive line, wherein the first conductive line includes the first pad structure, at least a portion of the first horizontal portion, and at least a portion of the first vertical portion, and the second conductive line includes the second pad structure, at least a portion of the second horizontal portion, and at least a portion of the second vertical portion.
2. The method of claim 1, wherein etching the pre-pattern to remove the first and second portions of the ring structure such that the pre-structure forms a spacer structure comprises:
forming a sacrificial layer on the pre-pattern, the sacrificial layer having a plurality of openings and barrier portions, the openings leaving the first and second portions exposed;
etching to remove the first part and the second part to form the interval structure;
and removing the sacrificial layer.
3. The method of claim 1, wherein forming a pre-pattern on a substrate comprises:
forming a plurality of grooves on the substrate, wherein the grooves are arranged at intervals along the first direction, the grooves comprise a first sub-groove, a second sub-groove and a third sub-groove, and the second sub-groove and the third sub-groove are respectively positioned at two ends of the first sub-groove and are in contact with the first sub-groove;
and arranging a filling material in the groove, so that a ring structure is formed on the side wall of the first sub-groove, so that the second sub-groove forms the first bonding pad structure, and so that the third sub-groove forms the second bonding pad structure.
4. The method of claim 1, wherein a width of the first pad structure in a second direction is greater than three times a width of the first upright portion in the first direction, wherein a width of the second pad structure in the second direction is greater than three times a width of the second upright portion in the first direction, and wherein the second direction is perpendicular to the first direction.
5. The method of claim 1, wherein the first wire further comprises at least a portion of the second riser, and wherein the second wire further comprises at least a portion of the first riser.
6. The method of claim 1, wherein a width of the first riser in the first direction is greater than one-half a width of the first pad structure, and wherein a width of the second riser in the first direction is greater than one-half a width of the second pad structure in the first direction.
7. The method of claim 1, wherein the first pad structure and the second pad structure are the same or different.
8. A pattern layout manufactured by the manufacturing method of any one of claims 1 to 7.
9. A pattern layout, comprising:
a substrate;
a plurality of spacer structures on a surface of the substrate, the spacer structures being arranged at intervals along a first direction, the first direction being perpendicular to a thickness direction of the pattern, the spacer structures including two wires that are not connected to each other, a first wire and a second wire, respectively, wherein the first wire includes a first pad structure, a first sub-horizontal portion, and a first sub-vertical portion, and the second wire includes a second pad structure, a second sub-horizontal portion, and a second sub-vertical portion, wherein the first sub-horizontal portion is in contact with the first pad structure, and the second sub-horizontal portion is in contact with the second pad structure;
the first conductive line further includes a third sub-vertical portion having a width identical to that of the second sub-vertical portion.
10. The pattern layout of claim 9, wherein the first conductive line further comprises a third sub-vertical portion, the second conductive line further comprises a fourth sub-vertical portion, a width of the third sub-vertical portion is the same as a width of the second sub-vertical portion, a central axis of the third sub-vertical portion coincides with a central axis of the second sub-vertical portion, the fourth sub-vertical portion is the same as a width of the first sub-vertical portion, and a central axis of the fourth sub-vertical portion coincides with a central axis of the first sub-vertical portion.
11. The pattern layout of claim 10, wherein the third sub-vertical portion is the same as the fourth sub-vertical portion.
12. The pattern layout of claim 9, wherein a width of the first pad structure in a second direction is greater than three times a width of the first sub-vertical portion in the first direction, wherein a width of the second pad structure in the second direction is greater than three times a width of the second sub-vertical portion in the first direction, and wherein the second direction is perpendicular to the first direction.
13. The pattern layout of claim 9, wherein a width of the first sub-vertical portion in the first direction is greater than one-half of a width of the first pad structure in the first direction, and a width of the second sub-vertical portion in the first direction is greater than one-half of a width of the second pad structure in the first direction.
14. The pattern layout of claim 9, wherein a plurality of the spacer structures are spaced apart by the same distance in the first direction.
15. The pattern layout of claim 9, wherein the first sub-vertical portion and the second sub-vertical portion are identical, and the first sub-horizontal portion is identical to the first sub-horizontal portion.
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