CN112259495A - Wafer printing process - Google Patents
Wafer printing process Download PDFInfo
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- CN112259495A CN112259495A CN202011140431.XA CN202011140431A CN112259495A CN 112259495 A CN112259495 A CN 112259495A CN 202011140431 A CN202011140431 A CN 202011140431A CN 112259495 A CN112259495 A CN 112259495A
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- wafer
- carrier plate
- glass carrier
- printing process
- thick film
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68372—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support a device or wafer when forming electrical connections thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/11001—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
- H01L2224/11002—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for supporting the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
- H01L2224/1131—Manufacturing methods by local deposition of the material of the bump connector in liquid form
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
The invention belongs to the field of chip production and discloses a wafer printing process which comprises the following steps: respectively processing two sides of the wafer, and bonding a glass carrier plate on the opposite side of the processed side of the wafer; the back of the wafer is bonded by using a secondary glass carrier plate to finish back elements and metal processing, the front of the wafer and the glass carrier plate bonded for the first time are bonded, then the wafer can be inverted to manufacture patterns on the front and a thick film electroplating, chemical plating or thick film tin ball printing process, the processing can be carried out under the protection support of the glass carrier plate on the back, the difficulty of high bottom section difference is not required to be overcome, and because only MetaPAD is arranged on the front of the ultrathin wafer, the manufacture of front photoresist, exposure and developing patterns is not influenced due to small section difference.
Description
Technical Field
The disclosure belongs to the field of chip production, and particularly relates to a wafer printing process.
Background
The advanced processing structure of the ultrathin wafer can be achieved by using the glass carrier plate to manufacture the back wafer for thinning and the element for manufacturing, if the process of thick film electroplating or thick film solder ball printing on the front side is needed, the wafer is too thin after bonding is released, and the operation of manufacturing the thick film electroplating or solder ball printing on the wafer is very difficult; if the back side windowing process of the glass carrier is adopted, although the front side wafer thick film processing process can be performed, the height difference formed by the glass windowing needs to be overcome when the front side pattern of the wafer is manufactured, and certain technical difficulty needs to be overcome.
Disclosure of Invention
In view of the deficiencies of the prior art, the present disclosure is directed to a wafer printing process, which solves the technical problems of the background art.
The purpose of the disclosure can be realized by the following technical scheme:
a wafer printing process, comprising the steps of: when the two sides of the wafer are respectively processed, the glass carrier plate is bonded on the opposite side of the processed side of the wafer.
Further, the method comprises the following steps:
s1, completing the front face process of the wafer, forming a plane alloy metal welding spot or a lower salient point alloy metal welding spot, and carrying out glass carrier plate bonding on the front face of the wafer to realize the first bonding of the glass carrier plate;
s2, finishing the processing of the back of the wafer;
s3, carrying out glass carrier plate bonding on the back of the wafer to realize the second glass carrier plate bonding;
s4, turning the wafer, debonding the glass carrier plate on the front side of the wafer in a laser or UV irradiation mode, and adsorbing and removing the debonded glass carrier plate;
and S5, removing the adhesive on the front surface of the wafer by using an organic solvent, and cleaning the front surface of the wafer.
Further, the wafer back processing method of S2 is one or more of photolithography, ion implantation, photoresist removal, and laser annealing.
Further, after the back surface of the wafer is processed in step S2, the wafer is cleaned, and after the cleaning is completed, the back surface of the wafer is plated with a metal layer film.
Further, the metal layer film is: a thin film metal layer containing one or more of Ti, Ni, and Ag; or a thin film metal layer containing one or more of Ti, Ni V, Ag and Al.
Further, the thick film electrolytic copper plating process, after the step of S5, includes S6:
s6.1, sputtering a copper seed layer on the front surface of the wafer;
s6.2, carrying out electroplated copper open photoresist pattern;
s6.3, thick film copper electroplating;
and S6.4, removing the photoresist, and removing the copper seed layer by wet etching to complete the thick film copper element structure.
Further, the process of printing thick film solder balls, after the step of S5, includes S6:
s6.a, forming a filling hole pattern with a printing photoresist opening by adopting a thick photoresist layer on the front surface of the wafer;
s6.b, coating solder paste, and printing a solder column for filling the photoresist opening hole;
s6.c, coating and spraying soldering flux after removing the light resistor;
and S6.d, heating the tin column to form a thick film tin ball, and then cleaning to remove the soldering flux.
Further, after completing the S6, the method includes S7:
and cutting the wafer, wherein the second glass carrier plate in the step S3 is bonded on the wafer in the wafer cutting process.
Further, the wafer cutting mode in S7 is one or more of diamond saw blade, laser trimming, or SF6 plasma etching.
Further, after completing the S7, the method includes the following steps:
s8, attaching the wafer to the cutting frame;
and S9, performing bond releasing on the second glass carrier plate, removing the second glass carrier plate after the bond releasing, removing the adhesive on the wafer, and cleaning the wafer. .
The beneficial effect of this disclosure:
the method comprises bonding a back element and the back of a wafer in a Metal process by using a secondary glass carrier plate, bonding the front of the wafer and the glass carrier plate bonded for the first time, and then reversing the wafer to manufacture a pattern on the front and a thick film electroplating, chemical plating or thick film solder ball printing process.
Drawings
In order to more clearly illustrate the embodiments or technical solutions in the prior art of the present disclosure, the drawings used in the description of the embodiments or prior art will be briefly described below, and it is obvious for those skilled in the art that other drawings can be obtained based on these drawings without creative efforts.
Fig. 1 is a schematic view of the forming of step S1 of the present disclosure;
FIG. 2 is a schematic view of the wafer backside being formed at step S2 of the present disclosure;
fig. 3 is a schematic view of the present disclosure at step S2;
fig. 4 is a schematic view of the present disclosure at step S3;
fig. 5 is a schematic view of the present disclosure at step S4;
fig. 6 is a schematic view of the present disclosure at step S5;
FIG. 7 is a schematic view of a processing flow of step S6 according to an embodiment of the present disclosure;
fig. 8 is a schematic view of a second S6 process flow according to an embodiment of the disclosure;
FIG. 9 is a schematic view of a processing flow from S7 to S9 according to a third embodiment of the present disclosure;
FIG. 10 is a schematic view of a processing flow from S7 to S9 according to one embodiment of the present disclosure.
Detailed Description
The technical solutions in the embodiments of the present disclosure will be clearly and completely described below with reference to the drawings in the embodiments of the present disclosure, and it is obvious that the described embodiments are only a part of the embodiments of the present disclosure, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments disclosed herein without making any creative effort, shall fall within the protection scope of the present disclosure.
A wafer printing process comprises the following steps: when the two sides of the wafer 1 are respectively processed, the glass carrier plate 2 is bonded on the opposite side of the processing side of the wafer 1.
In some disclosures, a wafer printing process includes the steps of:
as shown in figure 1 of the drawings, in which,
s1, completing the front process of the wafer 1, turning over the front of the wafer 1, and bonding the glass carrier plate 2 on the front of the wafer 1 to realize the bonding of the glass carrier plate 2 in the first bonding;
as shown in fig. 2 and 3, S2, completing the processing of the back surface of the wafer 1, where the processing mode of the back surface of the wafer 1 is one or more of photolithography process, ion implantation, photoresist removal, and laser annealing, after the processing of the back surface of the wafer 1 is completed, cleaning the wafer 1, and after the cleaning is completed, plating a metal layer film 10 on the back surface of the wafer 1, where the metal layer film 10 is: a thin film metal layer containing one or more of Ti, Ni, and Ag; or a thin film metal layer containing one or more of Ti, Ni V, Ag and Al.
As shown in fig. 4, S3, bonding the glass carrier 2 to the back surface of the wafer 1 to realize the second bonding of the glass carrier 2, wherein bonding may be performed by using a bonding method of a Laser debonding adhesive or a water-soluble adhesive;
as shown in fig. 5, S4, turning over the wafer 1, debonding the glass carrier 2 on the front side of the wafer 1 by laser or UV irradiation, and adsorbing and removing the debonded glass carrier 2;
as shown in fig. 6, S5, the adhesive on the front surface of the wafer 1 is removed by using an organic solvent, and the front surface of the wafer 1 is cleaned.
As shown in fig. 7, the thick film copper electroplating process is performed on the wafer 1, and after the processing of step S5, the thick film copper electroplating process includes steps S6:
s6.1, sputtering a copper seed layer 3 on the front surface of the wafer 1;
s6.2, carrying out electroplated copper opening on the photoresist pattern 31;
s6.3, thick film copper electroplating;
and S6.4, removing the photoresist, and removing the copper seed layer 3 by wet etching to complete the thick film copper element structure.
Example two:
s1, completing the front process of the wafer 1, forming a plane alloy metal welding spot or a lower salient point alloy metal welding spot, turning over the front of the wafer 1, and bonding the glass carrier plate 2 on the front of the wafer 1 to realize the bonding of the glass carrier plate 2 in the first bonding;
as shown in fig. 2 and 3, S2, completing the processing of the back surface of the wafer 1, where the processing mode of the back surface of the wafer 1 is one or more of photolithography process, ion implantation, photoresist removal, and laser annealing, after the processing of the back surface of the wafer 1 is completed, cleaning the wafer 1, and after the cleaning is completed, plating a metal layer film 10 on the back surface of the wafer 1, where the metal layer film 10 is: a thin film metal layer containing one or more of Ti, Ni, and Ag; or a thin film metal layer containing one or more of Ti, Ni V, Ag and Al.
As shown in fig. 4, S3, bonding the glass carrier 2 to the back surface of the wafer 1 to realize the second bonding of the glass carrier 2, wherein bonding may be performed by using a bonding method of a Laser debonding adhesive or a water-soluble adhesive;
as shown in fig. 5, S4, turning over the wafer 1, debonding the glass carrier 2 on the front side of the wafer 1 by laser or UV irradiation, and adsorbing and removing the debonded glass carrier 2;
as shown in fig. 6, S5, the adhesive on the front surface of the wafer 1 is removed by using an organic solvent, and the front surface of the wafer 1 is cleaned.
Performing a thick film solder ball printing process on the wafer 1, wherein after the step of S5, the method comprises the steps of S6:
s6.a, forming a filling hole pattern 4 with a printing photoresistance opening by adopting a thick photoresistance layer on the front surface of the wafer 1;
s6.b, coating solder paste, and printing a solder column 41 for filling the photoresist opening hole;
s6.c, coating and spraying the soldering flux 42 after removing the light resistor;
and S6.d, heating the tin column 41 to form a thick film tin ball, and then cleaning to remove the soldering flux 42.
As shown in fig. 9 or fig. 10, the third embodiment further includes the following steps after the first or second embodiment;
s7, cutting the wafer 1, wherein in the cutting process of the wafer 1, the second glass carrier plate 2 in the S3 is bonded on the wafer 1 (no matter thick film copper plating or thick film printing tin balls, the stress distribution is very complex during cutting, and the crystal grain cutting is completed in a diamond saw blade, laser fine adjustment or SF6 plasma etching mode before the second glass carrier plate 2 is bonded, so that the stress is completely released, and the problem of fragment breakage caused by the fact that the wafer 1 is too thin is avoided);
s8, attaching the wafer 1 to the cutting frame 5;
s9, performing bond-breaking on the second glass carrier plate 2, removing the second glass carrier plate 2 after the bond-breaking, removing the adhesive on the wafer 1, and cleaning the wafer 1; wherein the second glass carrier plate 2 is subjected to key release in one or more modes of laser, UV irradiation and DI water washing, and the back surface after key release is cleaned.
The working principle is as follows:
the problems of the thickness, the section difference, the stress and the like of the ultrathin wafer 1 can be overcome in the process of manufacturing by using the bonding and the debonding of the glass carrier plate 2 twice, the protective support of the glass carrier plate 2 can be arranged in the complex process equipment, and the thinnest thickness generation limit (30-50um) of the wafer 1 can be reached;
the ultra-thin wafer 1 and the thick film copper electroplating or thick film tin ball printing process can be combined to achieve a high-performance power element framework with the lowest resistance, high current capacity and the best heat dissipation effect;
the front and back photoresist patterns 31 can be formed on a flat surface to form a smooth photoresist pattern without distortion of the pattern due to step difference, thereby achieving a high yield.
In the description herein, references to the description of "one embodiment," "an example," "a specific example," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the disclosure. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing illustrates and describes the general principles, principal features, and advantages of the present disclosure. It will be understood by those skilled in the art that the present disclosure is not limited to the embodiments described above, which are presented solely for purposes of illustrating the principles of the disclosure, and that various changes and modifications may be made to the disclosure without departing from the spirit and scope of the disclosure, which is intended to be covered by the claims.
Claims (10)
1. A wafer printing process is characterized by comprising the following steps: when the two surfaces of the wafer (1) are respectively processed, the glass carrier plate (2) is bonded on the opposite surface of the processing surface of the wafer (1).
2. A wafer printing process according to claim 1, comprising the steps of:
s1, completing the front process of the wafer (1), forming a plane alloy metal welding spot or a lower salient point alloy metal welding spot, and bonding the glass carrier plate (2) on the front of the wafer (1) to realize the bonding of the glass carrier plate (2) for the first time;
s2, finishing the processing of the back surface of the wafer (1);
s3, bonding the glass carrier plate (2) on the back of the wafer (1) to realize the bonding of the glass carrier plate (2) for the second time;
s4, turning the wafer (1), debonding the glass carrier plate (2) on the front side of the wafer (1) by laser or UV irradiation, and adsorbing and removing the debonded glass carrier plate (2);
and S5, removing the adhesive on the front surface of the wafer (1) by using an organic solvent, and cleaning the front surface of the wafer (1).
3. The wafer printing process as claimed in claim 1, wherein the wafer 1 backside processing of S2 is one or more of photolithography, ion implantation, photoresist stripping, and laser annealing.
4. The wafer printing process according to claim 1, wherein after the back side of the wafer (1) of S2 is processed, the wafer (1) is cleaned, and after the cleaning is completed, the back side of the wafer (1) is plated with the metal layer film (10).
5. The wafer printing process according to claim 4, wherein the metal layer film (10) is: a thin film metal layer containing one or more of Ti, Ni, and Ag; or a thin film metal layer containing one or more of Ti, NiV, Ag and Al.
6. The wafer printing process of claim 1, wherein the thick film electro-coppering process, after the step of S5, comprises the steps of S6:
s6.1, sputtering a copper seed layer (3) on the front surface of the wafer (1);
s6.2, carrying out electroplated copper opening on the photoresist pattern (31);
s6.3, thick film copper electroplating;
and S6.4, removing the photoresist, and removing the copper seed layer (3) by wet etching to complete the thick film copper element structure.
7. The wafer printing process of claim 1, wherein the thick film solder ball printing process, after the step of S5, comprises the steps of S6:
s6.a, forming a filling hole pattern (4) with a printing photoresist opening by adopting a thick photoresist layer on the front surface of the wafer (1);
s6.b, coating solder paste, and printing a solder column (41) for filling the opening hole of the photoresist;
s6.c, coating and spraying soldering flux after removing the light resistor;
and S6.d, heating the tin column (41) to form a thick film tin ball, and then cleaning to remove the soldering flux.
8. The wafer printing process as claimed in claim 6 or 7, wherein the step of completing the step of S6 comprises the steps of S7:
and cutting the wafer (1), wherein the second glass carrier plate (2) in the step S3 is bonded on the wafer (1) in the cutting process of the wafer (1).
9. The wafer printing process of claim 8, wherein the wafer (1) in S7 is cut by one or more of diamond saw blade, laser trimming, or SF (6) plasma etching.
10. The wafer printing process of claim 8, wherein after the step of S7 is completed, the method comprises the following steps:
s8, attaching the wafer (1) to the cutting frame (5);
s9, the second glass carrier plate (2) is debonded, the debonded second glass carrier plate (2) is removed, the adhesive on the wafer (1) is removed, and the wafer (1) is cleaned.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011140431.XA CN112259495A (en) | 2020-10-22 | 2020-10-22 | Wafer printing process |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011140431.XA CN112259495A (en) | 2020-10-22 | 2020-10-22 | Wafer printing process |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112992767A (en) * | 2021-03-17 | 2021-06-18 | 绍兴同芯成集成电路有限公司 | Processing technology of compound semiconductor wafer |
| CN113053798A (en) * | 2021-03-30 | 2021-06-29 | 绍兴同芯成集成电路有限公司 | Ultrathin crystal thinning and cutting process utilizing tempered glass |
| CN113964248A (en) * | 2021-04-01 | 2022-01-21 | 友达光电股份有限公司 | Display device and method for manufacturing the same |
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| US20200266163A1 (en) * | 2017-03-06 | 2020-08-20 | Lbsemicon Co., Ltd. | Bump structure manufacturing method |
| CN111668125A (en) * | 2020-06-19 | 2020-09-15 | 绍兴同芯成集成电路有限公司 | Wafer tin ball printing process |
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| JPH08264932A (en) * | 1995-03-23 | 1996-10-11 | Hitachi Techno Eng Co Ltd | Solder bump forming method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112992767A (en) * | 2021-03-17 | 2021-06-18 | 绍兴同芯成集成电路有限公司 | Processing technology of compound semiconductor wafer |
| CN113053798A (en) * | 2021-03-30 | 2021-06-29 | 绍兴同芯成集成电路有限公司 | Ultrathin crystal thinning and cutting process utilizing tempered glass |
| CN113964248A (en) * | 2021-04-01 | 2022-01-21 | 友达光电股份有限公司 | Display device and method for manufacturing the same |
| CN113964248B (en) * | 2021-04-01 | 2023-11-14 | 友达光电股份有限公司 | Display device and method for manufacturing the same |
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