CN112162444A - Terahertz absorption switch from double frequency bands to wide frequency bands based on phase change principle - Google Patents
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/17—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on variable-absorption elements not provided for in groups G02F1/015 - G02F1/169
- G02F1/174—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on variable-absorption elements not provided for in groups G02F1/015 - G02F1/169 based on absorption band-shift, e.g. Stark - or Franz-Keldysh effect
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/10—Auxiliary devices for switching or interrupting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
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Abstract
The invention provides a terahertz absorption switch from a double-frequency band to a wide-frequency band based on a phase change principle, which relates to the technical field of electromagnetic function absorption materials of terahertz frequency bands and comprises a metal reflector layer, a dielectric layer and an artificial electromagnetic material structure layer, wherein the artificial electromagnetic material layer is composed of basic units of periodically arranged metal/phase change material micro-nano structures, each basic unit is composed of a split ring resonator I and a split ring resonator II which are mutually orthogonal, and a phase change material block I and a phase change material block II are respectively arranged on the split ring resonator I and the split ring resonator II. Compared with the prior art, the invention is suitable for a wider working spectrum modulation range: the absorption switch device based on the phase change principle can realize the terahertz absorption switch function from a double frequency band to a wide frequency band, and can be applied to temperature sensing; high-efficiency absorption effect: the method is widely applied to energy absorption; lower manufacturing costs: the device has small volume, simple structure and easy preparation.
Description
The technical field is as follows:
the invention relates to the technical field of electromagnetic function absorption materials of terahertz frequency bands, in particular to a terahertz absorption switch from a double frequency band to a wide frequency band, which is realized by controlling the on-off control of the absorption materials on the absorption characteristics of different frequency bands in a temperature control mode, and particularly relates to a terahertz absorption switch from the double frequency band to the wide frequency band based on a phase change principle.
Background art:
terahertz (THz) waves generally refer to electromagnetic waves having a frequency in the range of 0.1-10THz, and the band thereof is located between millimeter waves and infrared waves. Terahertz waves have many excellent characteristics and have important research values and application prospects in the fields of safety detection, medical imaging, communication technology and the like. However, most conventional natural materials have weak interaction with terahertz waves and do not have significant electromagnetic response, so that the terahertz devices and materials are lacked, and the research and utilization of terahertz waves by people are greatly limited. However, the enthusiasm of researchers for terahertz wave research is not contained, and materials and devices for terahertz wave control are always core contents of terahertz field research.
The advent of metamaterials (terahertz) has just provided an effective way to solve this problem-the lack of metamaterials in terahertz band materials is an artificial composite medium and composite material with extraordinary physical properties not found in natural materials, whose electromagnetic properties are largely dependent on the geometry of the basic cell, which is much smaller than the wavelength of the incident electromagnetic wave. In recent years, research on metamaterial absorbers attracts more and more attention, and the metamaterial absorbers are widely applied in the directions of energy collection, imaging, sensing and the like. In 2008, Landy et al put forward a microwave band single-band metamaterial absorber for the first time based on the idea of impedance matching, and then the strategy of absorption structure design gradually evolves into a typical sandwich structure (a metal mirror layer, a dielectric layer, and a metal micro-nano structure layer), and the absorption efficiency of such structure design can approach 100%. However, due to the strong resonant dispersion characteristics, the metamaterial absorbers are mostly narrow-band and single-frequency-point, which greatly limits the application of the metamaterial absorbers. To extend the absorption bandwidth of metamaterials, multiband and broadband absorbers based on multiple resonant responses, lumped elements, Mie scattering and graphene materials are widely studied.
At present, many reports exist on tunable absorption devices based on metamaterials (f.r.ling, opt.express 2016, 241518-. The tunable modulation reported so far focuses on the modulation of working frequency, and few broadband modulations are realized at the expense of absorption efficiency, and the realization of broadband modulation on the premise of ensuring high absorption efficiency is still a hot problem of tunable absorption characteristic research, however, a dual-band to broadband absorption switching device with high efficiency in terahertz frequency band is not found in relevant documents and patents based on a metamaterial tunable absorption device. This patent will provide a double-frequency-band to broadband's terahertz absorption switch based on phase transition principle, utilizes the bandwidth modulation of the mode realization absorption characteristic of control by temperature change, and this absorbing device's modulation depth is great, has efficient absorption characteristic.
The invention content is as follows:
the invention aims to provide a terahertz absorption switch from a double frequency band to a wide frequency band based on a phase change principle. The phase-change material is integrated into the design of the metamaterial absorption device, and the bandwidth modulation of the absorption characteristic is realized by utilizing multiple resonance response and the asymmetry of the position of the phase-change material.
The invention relates to a terahertz absorption switch from a double-frequency band to a broadband based on a phase change principle, which comprises a continuous metal reflector layer, a dielectric layer and an artificial electromagnetic material structure layer, wherein the dielectric layer is positioned between the metal reflector layer and the artificial electromagnetic material structure layer, the artificial electromagnetic material layer is composed of basic units of metal/phase change material micro-nano structures which are periodically arranged, each basic unit is composed of a split ring resonator I and a split ring resonator II, the split ring resonator I and the split ring resonator II are both coupled metal split ring resonators, the split ring resonator I and the split ring resonator II are mutually separated and mutually orthogonal, and a phase change material block I and a phase change material block II are respectively arranged on the split ring resonator I and the split ring resonator II; the split ring resonator I and the split ring resonator II are both annular, the long sides are c, the short sides are b, a connecting bridge is arranged between the two long sides c and is positioned at the position of c/2, the split ring resonator I and the split ring resonator II are respectively divided into two secondary rings by the connecting bridge, two openings are respectively arranged on the split ring resonator I and the split ring resonator II, one opening is positioned in the center of one short side, the short side is positioned in one of the secondary rings, and the other opening is positioned in the other secondary ring and is positioned on one long side; and the phase-change material block I and the phase-change material block II are respectively positioned at the opening of the long side of the split ring resonator I and the opening of the short side of the split ring resonator II.
As a further improvement of the invention, the basic unit structure has a length of 2 × a and a width of a; the line widths of the split ring resonator I and the split ring resonator II are both w, and the opening widths are both s; the distance between the split ring resonator I and the split ring resonator II is d; the shapes of the phase-change material block I and the phase-change material block II are completely the same as the shapes of the openings of the split ring resonators I and the split ring resonators II.
As a further improvement of the invention, the metal reflector layer and the artificial electromagnetic material structure layer are both made of metal materials, and the thicknesses t of the metal reflector layer and the artificial electromagnetic material structure layermAre all in the order of hundreds of nanometers.
As a further improvement of the invention, the metal material is gold, silver, aluminum or copper.
As a further improvement of the invention, the dielectric layer material is an organic polymer material or silicon dioxide, and the thickness t is micrometer.
As a further improvement of the invention, the organic polymer material is polyimide.
As a further improvement of the invention, the split ring resonator I, the split ring resonator II, the phase-change material block I and the phase-change material block II are etched and coated on the surface of the dielectric layer.
As a further improvement of the invention, the phase-change material block I and the phase-change material block II are both vanadium dioxide (VO)2) Material of thickness tm。
Compared with the prior art, the invention has the advantages that:
1. wider operating spectrum modulation range: the absorption switch device based on the phase change principle can realize the terahertz absorption switch function from a double frequency band to a wide frequency band, can be applied to temperature sensing, and is further applied to the technical fields of optical switches, optical modulators, intelligent temperature regulation and control systems, heat radiators and the like;
2. high-efficiency absorption effect: the method is widely applied to energy absorption;
3. lower manufacturing costs: the device has small volume, simple structure and easy preparation.
Description of the drawings:
FIG. 1 is a schematic perspective view of the present invention;
FIG. 2 is a schematic structural view of an artificial electromagnetic material layer of the present invention;
FIG. 3 is vanadium dioxide (VO)2) Simulation results of absorption characteristics before and after phase change.
In the figure: the phase-change material comprises a dielectric layer 1, a metal reflector layer 2, an artificial electromagnetic material structure layer 3, a split ring resonator I4, a split ring resonator II 5, a phase-change material block I6 and a phase-change material block II 7.
The specific implementation mode is as follows:
example 1
The terahertz absorption switch from a double frequency band to a wide frequency band based on the phase change principle comprises a continuous metal reflector layer 2, a dielectric layer 1 and an artificial electromagnetic material structure layer 3, wherein the dielectric layer 1 is made of polyimide, and the thickness t of the polyimide is 22 microns. The metal reflector layer 2 and the artificial electromagnetic material structure layer 3 are both made of aluminum, and the thicknesses t of the metal reflector layer 2 and the artificial electromagnetic material structure layer 3m200 nm; the dielectric layer 1 is positioned on the goldThe artificial electromagnetic material layer 3 is composed of basic units of periodically arranged metal/phase change material micro-nano structures, each basic unit is composed of a split ring resonator I4 and a split ring resonator II 5, the split ring resonator I4 and the split ring resonator II 5 are both coupled metal split ring resonators, the split ring resonator I4 and the split ring resonator II 5 are identical in physical shape, the split ring resonator I4 and the split ring resonator II 5 are mutually separated and mutually orthogonal, the split ring resonator I4 rotates 90 degrees clockwise relative to the split ring resonator II 5, the composite structure design is beneficial to formation of multiple resonance response, and great flexibility is provided for tunable control of absorption characteristics; the split ring resonator I4 and the split ring resonator II 5 are respectively provided with a phase-change material block I6 and a phase-change material block II 7, and the phase-change material block I6 and the phase-change material block II 7 are both vanadium dioxide (VO)2) Material of thickness tm(ii) a The split ring resonator I4, the split ring resonator II 5, the phase-change material block I6 and the phase-change material block II 7 are etched and coated on the surface of the dielectric layer 1; the split ring resonator I4 and the split ring resonator II 5 are both annular, the long sides are c, the short sides are b, a connecting bridge is arranged between the two long sides c and is positioned at the c/2 position, the split ring resonator I4 and the split ring resonator II 5 are respectively divided into two secondary rings by the connecting bridge, two openings are respectively arranged on the split ring resonator I4 and the split ring resonator II 5, one opening is positioned in the center of one short side, the short side is positioned in one secondary ring, and the other opening is positioned in the other secondary ring and is positioned on one long side; phase-change material block I6 and phase-change material block II 7 are respectively located split ring resonator I4's long limit opening part and split ring resonator II 5's short edge opening part.
The basic unit structure has the length of 2 a-200 μm and the width of 100 μm; the long side c of split-ring resonator I4 and split-ring resonator II 5 is 70 μm, the short side b is 50 μm, the line width is w is 10 μm, and the opening width is s is 10 μm; the distance between the mutually orthogonal coupling metal split ring resonators is d equal to 20 mu m; the shapes of the phase-change material block I6 and the phase-change material block II 7 are completely the same as the opening shapes of the split ring resonator I4 and the split ring resonator II 5.
Example 2
Compared with the embodiment 1, the method only has the following differences: the dielectric layer 1 is made of silicon dioxide, the metal reflector layer 2 and the artificial electromagnetic material structure layer 3 are both made of copper,
example 3
Compared with the embodiment 1, the method only has the following differences: the dielectric layer 1 is made of polyimide, and the metal reflector layer 2 and the artificial electromagnetic material structure layer 3 are both made of silver.
Example 4
Compared with the embodiment 1, the method only has the following differences: the dielectric layer 1 is made of silicon dioxide, and the metal reflector layer 2 and the artificial electromagnetic material structure layer 3 are both made of gold.
Performance detection of terahertz absorption switch from double frequency bands to wide frequency band based on phase change principle
The performance of the terahertz absorber can be measured by the absorption rate and is defined as
A＝1-R-T
Where A represents the absorption, R represents the reflectance and T represents the transmittance. Since the thickness of the metal mirror layer is greater than the skin depth of terahertz, the transmittance is nearly zero.
Based on the structural parameters of embodiment 1, the absorption spectrum of the terahertz wave absorption device can be obtained as shown in fig. 3, namely, at normal temperature, the phase change material vanadium dioxide (VO)2) In the semiconducting state, dual-band absorption peaks at 0.674THz and 0.865THz were observed, with absorbances of 99.6% and 98.8%, respectively. When the temperature of the device is controlled to be above 68 ℃ (330K) of phase transition temperature, vanadium dioxide (VO)2) The material is in a metal state, as can be seen from fig. 3, the absorptance at the frequencies of 0.944THz and 1.097THz is 98.7% and 99.3%, respectively, and the absorptance between the two is 95.4% with the lowest absorption valley, and if the lowest value of the absorption intensity is 95%, when the material is acted at high temperature, the broadband absorption characteristic with the bandwidth of 220GHz can be obtained. Therefore, by controlling the temperature, the dual-band absorption can be realizedThe broadband absorption switching effect is achieved, and the average tunability of the resonant frequency can reach 33.3%.
It will be appreciated by those of ordinary skill in the art that the embodiments described herein are intended to assist the reader in understanding the principles of the invention and are to be construed as being without limitation to such specifically recited embodiments and examples. All such possible equivalents and modifications are deemed to fall within the scope of the invention as defined in the claims.
Claims (8)
1. The terahertz absorption switch from the double-frequency band to the broadband based on the phase change principle comprises a continuous metal reflector layer 2, a dielectric layer 1 and an artificial electromagnetic material structure layer 3, wherein the dielectric layer 1 is positioned between the metal reflector layer 2 and the artificial electromagnetic material structure layer 3, and is characterized in that the artificial electromagnetic material layer 3 is composed of split ring resonators I4 and split ring resonators II 5 which are periodically arranged and have metal/phase change material micro-nano structures, the basic unit is composed of split ring resonators I4 and split ring resonators II 5, the split ring resonators I4 and the split ring resonators II 5 are both coupled metal split ring resonators, the split ring resonators I4 and the split ring resonators II 5 are mutually separated and mutually orthogonal, and phase change material blocks I6 and phase change material blocks II 7 are respectively arranged on the split ring resonators I4 and the split ring resonators II 5; the split ring resonator I4 and the split ring resonator II 5 are both annular, the long sides are c, the short sides are b, a connecting bridge is arranged between the two long sides c and is positioned at the c/2 position, the split ring resonator I4 and the split ring resonator II 5 are respectively divided into two secondary rings by the connecting bridge, two openings are respectively arranged on the split ring resonator I4 and the split ring resonator II 5, one opening is positioned in the center of one short side, the short side is positioned in one secondary ring, and the other opening is positioned in the other secondary ring and is positioned on one long side; phase-change material block I6 and phase-change material block II 7 are respectively located split ring resonator I4's long limit opening part and split ring resonator II 5's short edge opening part.
2. The phase change principle based dual-band to broadband terahertz absorption switch of claim 1, wherein the basic unit structure is 2 x a long and a wide; the line widths of the split ring resonator I4 and the split ring resonator II 5 are both w, and the opening widths are both s; the distance between the split ring resonator I4 and the split ring resonator II 5 is d; the shapes of the phase-change material block I6 and the phase-change material block II 7 are completely the same as the opening shapes of the split ring resonator I4 and the split ring resonator II 5.
3. The phase-change-principle-based dual-band-to-broadband terahertz absorption switch as claimed in claim 1, wherein the metal mirror layer 2 and the artificial electromagnetic material structure layer 3 are both made of metal materials, and the thicknesses t of the metal mirror layer 2 and the artificial electromagnetic material structure layer 3 are equal to each othermAre all in the order of hundreds of nanometers.
4. The phase-change-principle-based dual-band to broadband terahertz absorption switch according to claim 4, wherein the metal material is gold, silver, aluminum or copper.
5. The phase-change-principle-based dual-band-to-broadband terahertz absorption switch according to claim 1, wherein the dielectric layer 1 is made of an organic polymer material or silicon dioxide, and the thickness t is in the micrometer order.
6. The phase-change-principle-based dual-band-to-broadband terahertz absorption switch according to claim 5, wherein the organic polymer material is polyimide.
7. The phase-change-principle-based dual-band to broadband terahertz absorption switch as claimed in claim 1, wherein the split-ring resonator i 4, the split-ring resonator ii 5, the phase-change material block i 6 and the phase-change material block ii 7 are etched on the surface of the dielectric layer 1.
8. The phase change principle based dual-band to wide-band of claim 1The terahertz absorption switch is characterized in that the phase-change material block I6 and the phase-change material block II 7 are both vanadium dioxide (VO)2) Material of thickness tm。
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113013631A (en) * | 2021-02-26 | 2021-06-22 | 成都信息工程大学 | Dual-frequency functional super surface and design method thereof |
| CN113437526A (en) * | 2021-06-19 | 2021-09-24 | 西北工业大学 | Graphene/metal composite super-surface-based dual-band electromagnetic wave transmission modulation method and device |
| CN115145056A (en) * | 2022-08-10 | 2022-10-04 | 重庆邮电大学 | Terahertz modulator based on T-type and E-type super-surface resonance structures |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008121159A2 (en) * | 2006-10-19 | 2008-10-09 | Los Alamos National Security Llc | Active terahertz metamaterial devices |
| US20100301971A1 (en) * | 2008-02-07 | 2010-12-02 | Toyota Motor Engineering & Manufacturing North America, Inc. | Tunable metamaterials |
| CN105811120A (en) * | 2016-04-29 | 2016-07-27 | 上海交通大学 | Continuously adjustable degradable terahertz meta-material based on optical driving and preparation method thereof |
-
2020
- 2020-09-24 CN CN202011015601.1A patent/CN112162444B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008121159A2 (en) * | 2006-10-19 | 2008-10-09 | Los Alamos National Security Llc | Active terahertz metamaterial devices |
| US20100301971A1 (en) * | 2008-02-07 | 2010-12-02 | Toyota Motor Engineering & Manufacturing North America, Inc. | Tunable metamaterials |
| CN105811120A (en) * | 2016-04-29 | 2016-07-27 | 上海交通大学 | Continuously adjustable degradable terahertz meta-material based on optical driving and preparation method thereof |
Non-Patent Citations (4)
| Title |
|---|
| FENG WEN: "Terahertz tunable optically induced lattice in the magnetized monolayer graphene", OPTICS EXPRESS, vol. 30, no. 2, pages 2852 - 2862 * |
| RUWEN PENG: "From Passive to Active Manipulation of the Polarization States of Light via Metastructures", IEEE, pages 1 - 3 * |
| 刘东明: "可开关的多功能超构表面波片特性研究", 中国光学, vol. 14, no. 4, pages 1029 - 1037 * |
| 刘苏雅拉图: "基于石墨烯和二氧化钒的太赫兹可 调谐超材料吸收器", 中国优秀硕士学术论文全文数据库（电子期刊）基础科学辑, no. 2023 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113013631A (en) * | 2021-02-26 | 2021-06-22 | 成都信息工程大学 | Dual-frequency functional super surface and design method thereof |
| CN113437526A (en) * | 2021-06-19 | 2021-09-24 | 西北工业大学 | Graphene/metal composite super-surface-based dual-band electromagnetic wave transmission modulation method and device |
| CN113437526B (en) * | 2021-06-19 | 2022-07-12 | 西北工业大学 | Graphene/metal composite super-surface-based dual-band electromagnetic wave transmission modulation method and device |
| CN115145056A (en) * | 2022-08-10 | 2022-10-04 | 重庆邮电大学 | Terahertz modulator based on T-type and E-type super-surface resonance structures |
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