CN112135071B - Image sensing system - Google Patents

Image sensing system Download PDF

Info

Publication number
CN112135071B
CN112135071B CN201910555586.0A CN201910555586A CN112135071B CN 112135071 B CN112135071 B CN 112135071B CN 201910555586 A CN201910555586 A CN 201910555586A CN 112135071 B CN112135071 B CN 112135071B
Authority
CN
China
Prior art keywords
electrical signal
signal
photosensitive element
sensing system
image sensing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201910555586.0A
Other languages
Chinese (zh)
Other versions
CN112135071A (en
Inventor
戴亚翔
赖宠文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Harvest Intelligence Tech Co Ltd
Original Assignee
Shanghai Harvest Intelligence Tech Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Harvest Intelligence Tech Co Ltd filed Critical Shanghai Harvest Intelligence Tech Co Ltd
Priority to CN201910555586.0A priority Critical patent/CN112135071B/en
Priority to US16/909,732 priority patent/US11317040B2/en
Priority to TW109121643A priority patent/TWI759781B/en
Publication of CN112135071A publication Critical patent/CN112135071A/en
Application granted granted Critical
Publication of CN112135071B publication Critical patent/CN112135071B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

An image sensing system, comprising: an image sensor, comprising: the substrate comprises a first area and a second area which are distributed on the same surface in parallel; a plurality of pixels arranged in an array in the first region, each pixel including a first photosensitive element and a pixel switch connected in series, the first photosensitive element being adapted to generate a first electrical signal, the first electrical signal being obtained by conversion of signal light and ambient light; at least one second photosensitive element located in the second region, the second photosensitive element being adapted to generate a second electrical signal, the second electrical signal being obtained by said ambient light conversion; an external control unit coupled with the image sensor to receive the first and second electrical signals; the external control unit includes: and the processing unit is used for calculating a third electric signal according to the first electric signal and the second electric signal, and the third electric signal is used for representing the electric signal obtained by signal light conversion. The scheme provided by the invention can effectively eliminate the influence of the ambient light on the image acquisition result and improve the imaging quality.

Description

Image sensing system
Technical Field
The invention relates to the technical field of image sensors, in particular to an image sensing system.
Background
An image sensor (image sensor) is a sensor device that converts an optical image on a photosensitive surface into an electrical signal in a proportional relationship with the optical image by using a photoelectric conversion function of the photoelectric device.
Taking an optical fingerprint sensor as an example, the optical fingerprint sensor is generally formed by a pixel array, and each pixel in the pixel array is provided with a photosensitive element so as to convert an optical signal into an electrical signal.
Currently, image sensors are continuously developed toward large size, high resolution, high imaging quality, low cost, and the like. In recent years, the information acquired by the image is more important due to the vigorous development of artificial intelligence, and thus, higher requirements are put on the resolution and imaging quality of the image sensor.
The existing photoelectric devices applied to the image sensor are usually photodiodes (Photo-diodes), and are inevitably affected by interference factors such as ambient light during operation, so that imaging quality is poor.
Disclosure of Invention
The invention solves the technical problem of eliminating the influence of ambient light on the image acquisition result and improving the imaging quality.
To solve the above technical problem, an embodiment of the present invention provides an image sensing system, including: an image sensor, the image sensor comprising: the substrate comprises a first area and a second area which are distributed on the same surface in parallel; a plurality of pixels arranged in an array, wherein the plurality of pixels are located in the first area, each pixel comprises a first photosensitive element and a pixel switch which are connected in series, the first photosensitive element is suitable for generating a first electric signal, and the first electric signal is obtained through conversion of signal light and ambient light; at least one second light-sensing element, wherein the at least one second light-sensing element is located in the second region, the second light-sensing element being adapted to generate a second electrical signal, the second electrical signal being obtained by the ambient light conversion; an external control unit coupled with the image sensor to receive the first and second electrical signals; the external control unit includes: and the processing unit is used for calculating a third electric signal according to the first electric signal and the second electric signal, and the third electric signal is used for representing the electric signal obtained by the optical conversion of the signals.
Optionally, the image sensing system further includes: and the output end of the data line is coupled with the external control unit.
Optionally, the at least one second photosensitive element is respectively coupled to the processing units.
Optionally, the at least one second photosensitive element is uniformly distributed in the second area.
Optionally, the second area surrounds the first area, the number of the at least one second photosensitive element is an even number, and the even number of the second photosensitive elements are axisymmetrically distributed along a center line of the second area.
Optionally, the number of the even number of second photosensitive elements is 4.
Optionally, the second region surrounds the first region, the second region and the first region are both n-sided shapes, the at least one second photosensitive element is located at each vertex of the n-sided shapes, and n is a positive integer greater than 2.
Optionally, the calculating the third electrical signal according to the first electrical signal and the second electrical signal includes: receiving the first electrical signal; receiving second electrical signals generated by the at least one second photosensitive element respectively; correcting the at least one second electrical signal to obtain a fourth electrical signal; determining a difference between the first electrical signal and the fourth electrical signal as the third electrical signal.
Optionally, the modifying the at least one second electrical signal to obtain a fourth electrical signal includes: generating a pre-processed second electrical signal based on the at least one second electrical signal; and determining the fourth electric signal according to the proportional relation between the photosensitive area of the second photosensitive element and the photosensitive area of the first photosensitive element and the preprocessing of the second electric signal.
Optionally, the generating the preprocessed second electrical signal based on the at least one second electrical signal includes: determining an average value of the at least one second electrical signal as the pre-processed second electrical signal; or determining a minimum value of the at least one second electrical signal as the pre-processed second electrical signal; or determining the second electric signal with the largest numerical value occurrence probability in the at least one second electric signal as the preprocessed second electric signal.
Optionally, the pixel further comprises a buffer and an amplifier.
Compared with the prior art, the technical scheme of the embodiment of the invention has the following beneficial effects:
an embodiment of the present invention provides an image sensing system, including: an image sensor, the image sensor comprising: the substrate comprises a first area and a second area which are distributed on the same surface in parallel; a plurality of pixels arranged in an array, wherein the plurality of pixels are located in the first area, each pixel comprises a first photosensitive element and a pixel switch which are connected in series, the first photosensitive element is suitable for generating a first electric signal, and the first electric signal is obtained through conversion of signal light and ambient light; at least one second light-sensing element, wherein the at least one second light-sensing element is located in the second region, the second light-sensing element being adapted to generate a second electrical signal, the second electrical signal being obtained by the ambient light conversion; an external control unit coupled with the image sensor to receive the first and second electrical signals; the external control unit includes: and the processing unit is used for calculating a third electric signal according to the first electric signal and the second electric signal, and the third electric signal is used for representing the electric signal obtained by the optical conversion of the signals. Compared with the prior art, the image sensing system provided by the embodiment of the invention can effectively eliminate the influence of ambient light on the image acquisition result and improve the imaging quality. Specifically, the empty area except the pixel array on the image sensor is fully utilized, and the second photosensitive element for independently collecting the ambient light is arranged in the empty area, so that the image sensor can simultaneously output a first electric signal containing a signal light signal and an ambient light signal and a second electric signal containing only the ambient light signal. Further, by arranging the processing unit on the external control unit, the external control unit can correct the imaging result of the pixel array based on the second electric signal, so that the influence of the ambient light on the imaging result of the pixel array is effectively restrained.
Further, the at least one second photosensitive element is uniformly distributed in the second area to uniformly collect the ambient light signals of each point of the image sensor. Therefore, the environment light subtracted from the finally obtained third electric signal can be better close to the actual environment light of the environment where the image sensor is located, and the imaging quality is improved.
Drawings
FIG. 1 is a schematic diagram of an image sensing system according to a first embodiment of the present invention;
FIG. 2 is a schematic diagram of a calculation flow of a third electrical signal in the embodiment shown in FIG. 1;
FIG. 3 is a flow chart of one embodiment of step S103 of FIG. 2;
fig. 4 is a schematic diagram of an image sensing system according to a second embodiment of the present invention.
Detailed Description
As described in the background art, a Photo device used in an image sensor is usually a Photo Diode (Photo-Diode), and is inevitably affected by interference factors such as ambient light during operation, resulting in poor imaging quality.
To solve the above technical problem, an embodiment of the present invention provides an image sensing system, including: an image sensor, the image sensor comprising: the substrate comprises a first area and a second area which are distributed on the same surface in parallel; a plurality of pixels arranged in an array, wherein the plurality of pixels are located in the first area, each pixel comprises a first photosensitive element and a pixel switch which are connected in series, the first photosensitive element is suitable for generating a first electric signal, and the first electric signal is obtained through conversion of signal light and ambient light; at least one second light-sensing element, wherein the at least one second light-sensing element is located in the second region, the second light-sensing element being adapted to generate a second electrical signal, the second electrical signal being obtained by the ambient light conversion; an external control unit coupled with the image sensor to receive the first and second electrical signals; the external control unit includes: and the processing unit is used for calculating a third electric signal according to the first electric signal and the second electric signal, and the third electric signal is used for representing the electric signal obtained by the optical conversion of the signals.
Those skilled in the art understand that the image sensing system provided by the embodiment of the invention can effectively eliminate the influence of ambient light on the image acquisition result and improve the imaging quality. Specifically, the empty area except the pixel array on the image sensor is fully utilized, and the second photosensitive element for independently collecting the ambient light is arranged in the empty area, so that the image sensor can simultaneously output a first electric signal containing a signal light signal and an ambient light signal and a second electric signal containing only the ambient light signal. Further, by arranging the processing unit on the external control unit, the external control unit can correct the imaging result of the pixel array based on the second electric signal, so that the influence of the ambient light on the imaging result of the pixel array is effectively restrained.
In order to make the above objects, features and advantages of the present invention more comprehensible, embodiments accompanied with figures are described in detail below.
Fig. 1 is a schematic diagram of an image sensing system according to a first embodiment of the present invention.
The image sensing system described in this embodiment may be applied to an image acquisition scene, such as an optical fingerprint acquisition scene. For example, the image sensor included in the image sensing system may be an optical fingerprint sensor.
To more clearly illustrate the device structure, fig. 1 is presented by taking as an example the specific structure of a single pixel in a pixel array.
Specifically, the image sensing system 1 according to the present embodiment may include: an image sensor 10 for converting the sensed optical signal into an electrical signal and outputting the electrical signal; an external control unit 11 coupled to the image sensor 10 to receive an output signal of the image sensor 10 and to process an image acquired by the image sensor 10 based on the output signal.
The image sensor 10 may include: the substrate 101 may include a first region 101a and a second region 101b that are arranged in parallel on the same surface. The same surface may refer to a surface facing the object to be acquired when image acquisition is performed.
The image sensor 10 may further include: a plurality of pixels 102 arranged in an array, wherein the plurality of pixels 102 may be located in the first area 101a, each of the pixels 102 may include a first photosensitive element 103 and a pixel switch 104 connected in series, and the first photosensitive element 103 is adapted to generate a first electrical signal, which is obtained by converting signal light and ambient light.
The image sensor 10 may further include: at least one second light sensitive element 105, wherein the at least one second light sensitive element 105 may be located in the second region 101b, the second light sensitive element 105 being adapted to generate a second electrical signal, the second electrical signal being obtained by the ambient light conversion.
In a specific implementation, the pixel switch 104 is typically a thin film transistor (Thin Film Transistor, abbreviated as TFT) device, and the photosensitive element is used to collect an externally input optical signal and convert the optical signal into an electrical signal, and then store the electrical signal in a corresponding pixel. In this embodiment, the optical signals collected by the first photosensitive element 103 include an ambient optical signal and a signal optical signal, and the collected optical signals are converted into first electrical signals and stored in the corresponding pixels 102; the light signal collected by the second photosensitive element 105 includes the ambient light signal, and the collected light signal is converted into a second electric signal and output. In the optical fingerprint acquisition scene, the signal light signal carries fingerprint information.
In an implementation, the first photosensitive element 103 and the second photosensitive element 105 may be photodiodes. The photodiode may include a PIN junction amorphous silicon photodiode, a PN junction amorphous silicon photodiode, a PIN junction low temperature polysilicon photodiode, a PN junction low temperature polysilicon photodiode, a PIN junction organic photodiode, or a PN junction organic photodiode, etc.
In a specific implementation, the output signal received by the external control unit 11 includes the first electrical signal and the second electrical signal.
The external control unit 11 may include: and a processing unit 110 for calculating a third electric signal from the first electric signal and the second electric signal, wherein the third electric signal is used for representing the electric signal obtained by the optical conversion of the signals.
In a specific implementation, the processing unit 110 may be an additional entity module dedicated to calculating the third electrical signal; alternatively, the processing unit 110 may be integrated with an original signal receiving and processing module of the external control unit in a program form, so as to calculate the third electrical signal according to the received first electrical signal and the second electrical signal.
In an implementation, the image sensing system 1 may further include: a plurality of data lines (labeled c1 to cn in the figure), wherein, in each row of pixels 102, each pixel 102 is connected to the same data line ci, a first electric signal generated by a first photosensitive element 103 in each pixel 102 is transmitted to the data line ci through the pixel switch 104, and an output end of the data line ci is coupled to the external control unit 11,1 is equal to or less than i is equal to or less than n, where i is a positive integer.
The output ends of the different data lines ci are respectively coupled to different ports of the external control unit 11. Thus, the external control unit 11 may receive the first electrical signals transmitted by the respective data lines ci, respectively, and transmit the received first electrical signals to the processing unit 110.
In an implementation, the at least one second photosensitive element 105 may be respectively coupled to the processing unit 110 to transmit the second electrical signal generated by each second photosensitive element 105 to the processing unit 110.
In a variation, the output end of each second photosensitive element 105 may be coupled to the same port of the processing unit 110, where the processing unit 110 receives the superimposed signal of the second electrical signal generated by each second photosensitive element 105. Where superposition refers to signed accumulation.
For example, for the same port where the cathode (or anode) of each second photosensitive element 105 can be connected to the processing unit 110, the superimposed signal is thus the sum of the second electrical signals.
In an implementation, the at least one second photosensitive element 105 may be uniformly distributed in the second area 101b to uniformly collect the ambient light signals of each point of the image sensor 10. Therefore, the subtracted ambient light in the finally obtained third electric signal can better approach to the actual ambient light of the environment where the image sensor 10 is located, which is beneficial to improving the imaging quality.
In a specific implementation, the second area 101b may surround the first area 101a, the number of the at least one second photosensitive elements 105 may be an even number, and the even number of the second photosensitive elements 105 may be axisymmetrically distributed along a center line of the second area 101b.
For example, the second region 101b may be all empty regions of the substrate 101 except the first region 101 a. Referring to fig. 1, the first area 101a may be rectangular and located at a central position of the substrate 101, and correspondingly, the second area 101b may be a rectangular frame area on the substrate 101 except for the first area 101 a.
With continued reference to fig. 1, the center line may be parallel to adjacent right-angle sides of the rectangle, and accordingly, the number of the even number of second photosensitive elements 105 may be 4 and respectively located at four vertices of the rectangular frame region.
Alternatively, the number of the even number of second photosensitive elements 105 may be 6 (2 additional second photosensitive elements 105 are indicated by dotted lines in fig. 1) or more, so as to more densely collect the ambient light signals at each position of the image sensor 10. Further, the problem of inaccurate correction results caused when part of the second photosensitive element 105 cannot detect the ambient light signal due to being blocked can be solved.
The first area 101a and the second area 101b may also be in a circular or oval equiaxed symmetrical pattern, and the even number of the second photosensitive elements 105 may be symmetrically distributed along the symmetry axis of the axisymmetrical pattern, so as to ensure that the even number of the second photosensitive elements 105 are uniformly distributed on the image sensor 10, so as to collect an average ambient light signal of the image sensor 10.
For another example, the second region 101b and the first region 101a may each have an n-sided polygon, and the at least one second photosensitive element 105 may be located at each vertex of the n-sided polygon, where n is a positive integer greater than 2. Taking the case that the second area 101b and the first area 101a are pentagons, the number of the second photosensitive elements 105 may be 5 and each may be located at the vertex of the pentagon formed by the second area 101b.
For another example, the second area 101b and/or the first area 101a may be irregularly patterned, and by adjusting the setting positions of the second photosensitive elements 105, it may be ensured that the ambient light signals of the areas of the image sensor 10 are uniformly collected.
In a specific implementation, referring to fig. 2, the calculating the third electrical signal according to the first electrical signal and the second electrical signal may include the following steps:
step S101, receiving the first electric signal;
step S102, receiving second electric signals generated by the at least one second photosensitive element respectively;
step S103, at least one second electric signal is modified to obtain a fourth electric signal;
step S104, determining a difference between the first electrical signal and the fourth electrical signal as the third electrical signal.
In a specific implementation, the step S101 and the step S102 may be performed synchronously or asynchronously, and the order of execution of the step S101 and the step S102 may be interchanged when performed asynchronously.
In specific implementation, referring to fig. 3, the step S103 may include the following steps:
step S1031, generating a preprocessed second electrical signal based on the at least one second electrical signal;
step S1032, determining the fourth electrical signal according to the proportional relationship between the photosensitive area of the second photosensitive element and the photosensitive area of the first photosensitive element, and the preprocessing of the second electrical signal.
For example, the processing Unit 110 may include a Control Unit (Control Unit) 111, configured to perform analog-to-Digital Conversion (ADC) and data operation on the at least one second electrical signal, so as to integrate and process the at least one second electrical signal into an electrical signal proportional to the ambient light actually located by the image sensor 10, where the electrical signal is the preprocessed second electrical signal.
In a specific implementation, the step S1031 may include the steps of: the at least one second electrical signal (as shown in figure I 2 To I 5 ) Is determined as the average value of the pre-processed second electrical signal. Thus, by integrating the ambient light signals collected by the second photosensitive elements 105 disposed at different positions of the image sensor 10, an average ambient light signal of the image sensor 10 can be obtained, the ambient light signal represented by the fourth electrical signal is ensured to be as close as possible to the actual ambient light of the environment where the image sensor 10 is located, and the finally counteracted third electrical signal can truly retain the image sensor10, i.e. no subtraction, nor residual ambient light signal.
In a variation, the step S1031 may include the steps of: determining a minimum value of the at least one second electrical signal as the pre-processed second electrical signal to avoid overcorrection affecting image quality.
In a variation, the step S1031 may include the steps of: and determining the second electric signal with the largest numerical value occurrence probability in the at least one second electric signal as the preprocessing second electric signal. This also has the effect of avoiding overcorrection.
In a specific implementation, the step S1032 may be expressed based on the following formula:
I out =I 1 -αI 6
wherein I is out Is the third electrical signal; i 1 Is the first electrical signal; α is the proportional relationship between the photosensitive area of the second photosensitive element 105 and the photosensitive area of the first photosensitive element 103; i 6 Pre-processing the second electrical signal for the pre-processing; alpha I 6 Is the fourth electrical signal.
In a specific implementation, the second photosensitive element 105 and the first photosensitive element 103 may adopt photodiodes with different specifications, for example, the photosensitive area of the second photosensitive element 105 may be larger than that of the first photosensitive element 103, so as to reasonably reduce the number of second photosensitive elements 105 and reduce the cost on the basis of ensuring that the ambient light signals in different areas of the image sensor 10 are uniformly collected. The difference of the sensing results of the ambient light caused by the difference of the photosensitive areas can be corrected by the proportional relationship between the photosensitive area of the second photosensitive element 105 and the photosensitive area of the first photosensitive element 103, so that the ambient light signal portion in the first electrical signal transmitted by the data line ci can be substantially eliminated by the fourth electrical signal.
In an implementation, the processing unit 110 may further include a current source 112 for receiving the fourth electrical signal. The current sources 112 may be in one-to-one correspondence with the data lines ci to receive the first electrical signals transmitted by the corresponding data lines ci, and each current source 112 is coupled to the control unit 111 to receive the fourth electrical signals.
For each data line ci, the photocurrent (i.e., the third electrical signal) finally output by the data line ci is a superposition of the corresponding first electrical signal and the fourth electrical signal received by the corresponding current source 112. I.e. the difference between the first and fourth electrical signals.
In a variation, the photosensitive area of the second photosensitive element 105 may be the same as the photosensitive area of the first photosensitive element 103, and accordingly, the proportional relationship α may be 1.
In a variation, the photosensitive areas of the second photosensitive elements 105 may be different, and accordingly, the proportional relationship α may be determined according to an average value of the photosensitive areas of the second photosensitive elements 105.
By the above, the scheme of the embodiment can effectively eliminate the influence of the ambient light on the image acquisition result and improve the imaging quality. Specifically, the empty area of the image sensor 10 other than the pixel array is fully utilized, and the second photosensitive element 105 for separately collecting the ambient light is arranged in the empty area, so that the image sensor 10 can simultaneously output the first electric signal containing the signal light signal and the second electric signal containing only the ambient light signal. Further, by providing the processing unit 110 at the external control unit 11, the external control unit 11 is enabled to correct the imaging result of the pixel array based on the second electrical signal, so as to effectively suppress the influence of the ambient light on the imaging result of the pixel array.
Fig. 4 is a schematic diagram of an image sensing system according to a second embodiment of the present invention. In the following detailed description, descriptions about matters and features common to the first embodiment shown in fig. 1 are omitted, and only descriptions are made for different points. In particular, the same operational effects produced by the same structure are not mentioned one by one for each embodiment. Like parts are marked with like reference numerals throughout the various figures.
Only the differences between the second embodiment and the first embodiment shown in fig. 1 described above will be described in detail.
In the present embodiment, the main difference from the image sensing system 1 shown in fig. 1 described above is that: for each pixel 102 comprised by the image sensing system 2 shown in fig. 4, the pixel 102 may further comprise a buffer 106 and an amplifier 107.
The buffer 106 may be a capacitor, so as to store the first electrical signal converted by the corresponding first photosensitive element 103; the amplifier 107 may be a TFT. Thus, the pixel 102 is an active pixel and the image sensor 10 is an active image sensor.
In an embodiment, each of the second photosensitive elements 103 may be correspondingly coupled to an amplifier (not shown) and a buffer (not shown) to buffer and amplify the collected second electrical signal.
Accordingly, the processing unit 110 may comprehensively determine the proportional relationship α according to factors such as a photosensitive area, a voltage, a size, and the like of the amplifier coupled to the second photosensitive element 103.
Although the above-described embodiment is to connect the data lines ci in units of rows, in practical application, the concepts of rows and columns are interchangeable for the pixel array composed of the plurality of pixels 102. That is, for each data line ci, the data line ci may be coupled to a plurality of pixels 102 of a corresponding column.
In a specific implementation, the external control unit 11 may be an integrated circuit chip (Integrated Circuit, abbreviated as IC).
In a specific implementation, the number and the photosensitive area of the second photosensitive elements 102 may be reasonably adjusted according to the shape and the area of the second area 101b, so as to ensure that the ambient light sensing ranges of the plurality of second photosensitive elements 102 can substantially cover the second area 101b, thereby effectively acquiring the ambient light signals of different positions of the image sensor 10.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention should be assessed accordingly to that of the appended claims.

Claims (14)

1. An image sensing system, comprising:
a substrate;
a plurality of pixels arranged in an array, wherein the plurality of pixels are positioned on the substrate, each pixel comprises a first photosensitive element, and the first photosensitive elements are suitable for generating a first electric signal, and the first electric signal comprises electric signals obtained by signal light and ambient light conversion;
at least one second photosensitive element, wherein the at least one second photosensitive element is located on the substrate, the second photosensitive element being adapted to generate a second electrical signal comprising an electrical signal obtained by the ambient light conversion;
the processing unit is suitable for subtracting the ambient light in the first electric signal based on the second electric signal to obtain a third electric signal, and the third electric signal is used as an electric signal finally converted by the signal light;
the subtracting the ambient light in the first electrical signal based on the second electrical signal to obtain a third electrical signal includes: receiving the first electrical signal; receiving second electrical signals generated by the at least one second photosensitive element respectively; correcting the at least one second electrical signal to obtain a fourth electrical signal;
determining a difference between the first electrical signal and the fourth electrical signal as the third electrical signal;
said modifying the at least one second electrical signal to obtain a fourth electrical signal comprises: generating a pre-processed second electrical signal based on the at least one second electrical signal; and determining the fourth electric signal according to the proportional relation between the photosensitive area of the second photosensitive element and the photosensitive area of the first photosensitive element and the preprocessing of the second electric signal.
2. The image sensing system of claim 1, further comprising an external control unit for receiving the first electrical signal and the second electrical signal.
3. The image sensing system of claim 2, wherein each of the pixels further comprises a pixel switch, the image sensing system further comprising:
and the output end of the data line is coupled with the external control unit.
4. The image sensing system of claim 2, wherein the at least one second photosensitive element is respectively coupled to the external control unit.
5. The image sensing system of claim 1, wherein the substrate comprises a first region and a second region, wherein the plurality of pixels are located in the first region and the at least one second photosensitive element is located in the second region.
6. The image sensing system of claim 5, wherein the first region and the second region are juxtaposed on a same side of the substrate.
7. The image sensing system of claim 5, wherein the at least one second photosensitive element is uniformly distributed in the second region.
8. The image sensing system of claim 7, wherein the second region surrounds the first region.
9. The image sensing system of claim 8, wherein the at least one second photosensitive element is an even number, and wherein the even number of second photosensitive elements are axisymmetrically distributed along a center line of the second region.
10. The image sensing system of claim 9, wherein the number of the even number of second photosensitive elements is 4.
11. The image sensing system of claim 8, wherein the second region and the first region are each n-sided, the at least one second photosensitive element is located at each vertex of the n-sided, and n is a positive integer greater than 2.
12. The image sensing system of claim 1, wherein the generating the pre-processed second electrical signal based on the at least one second electrical signal comprises:
determining an average value of the at least one second electrical signal as the pre-processed second electrical signal; or determining a minimum value of the at least one second electrical signal as the pre-processed second electrical signal; or alternatively, the process may be performed,
and determining the second electric signal with the largest numerical value occurrence probability in the at least one second electric signal as the preprocessing second electric signal.
13. The image sensing system of claim 1, wherein the generating the pre-processed second electrical signal based on the at least one second electrical signal comprises: the at least one second electrical signal is processed into an electrical signal proportional to the ambient light in which the image sensing system is actually located.
14. The image sensing system according to any one of claims 1 to 13, wherein the pixel further comprises a buffer for storing the first electrical signal generated by the first photosensitive element and an amplifier.
CN201910555586.0A 2019-06-25 2019-06-25 Image sensing system Active CN112135071B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201910555586.0A CN112135071B (en) 2019-06-25 2019-06-25 Image sensing system
US16/909,732 US11317040B2 (en) 2019-06-25 2020-06-23 Image sensing apparatus
TW109121643A TWI759781B (en) 2019-06-25 2020-06-24 Image sensing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910555586.0A CN112135071B (en) 2019-06-25 2019-06-25 Image sensing system

Publications (2)

Publication Number Publication Date
CN112135071A CN112135071A (en) 2020-12-25
CN112135071B true CN112135071B (en) 2023-07-28

Family

ID=73849997

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910555586.0A Active CN112135071B (en) 2019-06-25 2019-06-25 Image sensing system

Country Status (1)

Country Link
CN (1) CN112135071B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114157356A (en) * 2021-11-30 2022-03-08 京东方科技集团股份有限公司 Photosensitive circuit, photosensitive substrate and photosensitive device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103985721A (en) * 2013-02-08 2014-08-13 三星电子株式会社 Depth pixel, three-dimensional image sensor and method of operating depth pixel
CN107580185A (en) * 2017-09-30 2018-01-12 德淮半导体有限公司 Imaging sensor and operating method and imaging device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040252867A1 (en) * 2000-01-05 2004-12-16 Je-Hsiung Lan Biometric sensor
US8760631B2 (en) * 2010-01-27 2014-06-24 Intersil Americas Inc. Distance sensing by IQ domain differentiation of time of flight (TOF) measurements
WO2013071312A1 (en) * 2011-11-12 2013-05-16 Cross Match Technologies, Inc. Ambient light illumination for non-imaging contact sensors
US8723095B2 (en) * 2012-02-16 2014-05-13 Aptina Imaging Corporation Method and apparatus for ambient light detection including plural image pixels and at least one dark pixel
KR20140024707A (en) * 2012-08-21 2014-03-03 삼성전자주식회사 Image sensor and electronic device including the same
CN107093617B (en) * 2017-05-02 2019-09-10 京东方科技集团股份有限公司 Array substrate, image-pickup method and display device
CN108566524B (en) * 2018-01-31 2023-10-27 光微信息科技(合肥)有限公司 Pixel unit, image sensor chip, imaging system, pixel unit forming method and depth information measuring and calculating method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103985721A (en) * 2013-02-08 2014-08-13 三星电子株式会社 Depth pixel, three-dimensional image sensor and method of operating depth pixel
CN107580185A (en) * 2017-09-30 2018-01-12 德淮半导体有限公司 Imaging sensor and operating method and imaging device

Also Published As

Publication number Publication date
CN112135071A (en) 2020-12-25

Similar Documents

Publication Publication Date Title
CN100426849C (en) Solid-state image pickup apparatus
US10868990B2 (en) Active pixel sensor and driving method thereof, imager and electronic device
US20220035056A1 (en) Photon counting device and photon counting method
TW201911857A (en) Photo sensor, electronic device including the photo sensor and a method for varying exposure time of pixels in photo sensor using motion prediction
CN111033745A (en) Stacked photosensor assembly with pixel level interconnects
WO2019036280A1 (en) Detecting high intensity light in photo sensor
CN104272723A (en) Photoarray, particularly for combining sampled brightness sensing with asynchronous detection of time-dependent image data
US20120242621A1 (en) Image sensor and display device incorporating the same
CN101268682A (en) Method and apparatus providing imager noise reduction using parallel input arithmetic mean modules
US20100329421A1 (en) Suppression of direct detection events in x-ray detectors
KR20100006033A (en) Photo-electricity converter having wide dynamic range and method thereof
CN112135071B (en) Image sensing system
CN101160955B (en) Generation and storage of column offsets for an image sensor
CN112135014B (en) Signal acquisition device
US9596460B2 (en) Mapping electrical crosstalk in pixelated sensor arrays
CN211239962U (en) Active pixel sensing circuit, image sensor and light detection display panel
JP4575564B2 (en) Artifact compensation system for matrix address X-ray imaging panel
US11317040B2 (en) Image sensing apparatus
CN112218011B (en) Image sensor
JP2856940B2 (en) Image reading device
KR20080061052A (en) Calibration system for linear photodiode and method for the same
CN111368722A (en) Method and system for imaging fingerprint under screen
KR100602379B1 (en) image sensor
TWI766411B (en) Imaging sensor and electronic device
WO2021163914A1 (en) Photosensitive detection circuit, optical signal detection method, device and system, and display device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant