CN112018769A - Multi-frequency rectifying circuit based on self-matching structure and manufacturing method - Google Patents
Multi-frequency rectifying circuit based on self-matching structure and manufacturing method Download PDFInfo
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- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract
The invention discloses a multi-frequency rectifying circuit based on a self-matching structure and a manufacturing method thereof. The multi-frequency rectifying circuit comprises a medium substrate and a micro-strip structure, wherein the micro-strip structure is fixed on one surface of the medium substrate and comprises an input matching network, a multi-frequency self-matching network and a harmonic suppression network, the output end of the input matching network is connected with the input end of the multi-frequency self-matching network, and the output end of the multi-frequency self-matching network is connected with the input end of the harmonic suppression network. The multi-frequency rectifying circuit provided by the invention has a plurality of frequency self-matching structures, the frequency self-matching structure of each frequency band only has a rectifying effect at a specific frequency point, and shows a reflecting characteristic in other frequency bands. The invention is widely applied to the technical field of electromagnetic energy recovery.
Description
Technical Field
The invention relates to the technical field of electromagnetic energy recovery, in particular to a multi-frequency rectifying circuit based on a self-matching structure and a manufacturing method thereof.
Background
Wearable equipment, medical health service and environmental detection etc. widely use equipment such as thing networking equipment and sensor, and the power supply to these equipment is the important link of realizing technology such as wearable equipment. In the promotion of the above requirements, a wireless energy transmission technology based on microwave energy transmission is applied to power supply of electric equipment such as internet of things equipment. In the prior art, microwave energy used for power transmission is distributed in a plurality of frequency bands, so that the electric equipment is not beneficial to efficiently receiving the microwave energy and converting the microwave energy into electric energy.
Disclosure of Invention
In view of at least one of the above technical problems, an object of the present invention is to provide a multi-frequency rectifier circuit based on a self-matching structure and a manufacturing method thereof.
In one aspect, an embodiment of the present invention provides a multi-frequency rectifier circuit based on a self-matching structure, including:
a dielectric substrate;
a microstrip structure; the microstrip structure is fixed on one surface of the dielectric substrate; the microstrip structure comprises an input matching network, a multi-frequency self-matching network and a harmonic suppression network, wherein the output end of the input matching network is connected with the input end of the multi-frequency self-matching network, and the output end of the multi-frequency self-matching network is connected with the input end of the harmonic suppression network.
Further, the multi-frequency rectifying circuit further comprises a ground wire which is fixed on the other surface of the medium substrate; the input end of the input matching network is connected to a radio frequency source, and the output end of the harmonic suppression network is connected to a load.
Further, the input matching network comprises:
a first conductive line; one end of the first conducting wire is used as an input end of the input matching network;
a first microstrip line; one end of the first microstrip line is connected with the first lead, and the other end of the first microstrip line is open-circuited;
a capacitor; one end of the capacitor is connected with the other end of the first lead, and the other end of the capacitor is used as the output end of the input matching network.
Further, the multi-frequency self-matching network comprises:
a second conductive line; one end of the second wire is used as the input end of the multi-frequency self-matching network, and the other end of the second wire is used as the output end of the multi-frequency self-matching network;
a plurality of frequency self-matching structures; one end of each frequency self-matching structure is connected with the second lead, and the other end of each frequency self-matching structure is grounded.
Further, the frequency self-matching structure includes:
the cathode of the Schottky diode is connected with the second lead;
a second microstrip line; one end of the second microstrip line is connected with the anode of the Schottky diode, and the other end of the second microstrip line is grounded.
Further, the harmonic rejection network includes:
a third conductive line; one end of the third wire is used as the input end of the harmonic suppression network, and the other end of the third wire is used as the output end of the harmonic suppression network;
a plurality of fan-shaped branches; each fan-shaped branch knot is connected with the third lead; the number of the fan-shaped branches is equal to that of the frequency self-matching structures.
Further, the plurality of frequency self-matching structures includes a first frequency self-matching structure having a first electrical length corresponding to a first operating frequency, a second frequency self-matching structure having a second electrical length corresponding to a second operating frequency, and a third frequency self-matching structure having a third electrical length corresponding to a third operating frequency.
Further, the plurality of fan-shaped branches include a first fan-shaped branch, a second fan-shaped branch and a third fan-shaped branch, the equivalent electrical length of the first fan-shaped branch is one fourth of the wavelength corresponding to the working frequency of the first fan-shaped branch, the equivalent electrical length of the second fan-shaped branch is one fourth of the wavelength corresponding to the working frequency of the second fan-shaped branch, and the equivalent electrical length of the third fan-shaped branch is one fourth of the wavelength corresponding to the working frequency of the third fan-shaped branch.
Furthermore, the material of the dielectric substrate is Rogers R4003C, the thickness of the dielectric substrate is 0.813mm, and the dielectric constant of the dielectric substrate is 3.38.
On the other hand, the embodiment of the invention also comprises a manufacturing method of the multi-frequency rectifying circuit based on the self-matching structure, which comprises the following steps:
obtaining a dielectric substrate;
manufacturing a micro-strip structure on one surface of the dielectric substrate; the microstrip structure comprises an input matching network, a multi-frequency self-matching network and a harmonic suppression network, wherein the output end of the input matching network is connected with the input end of the multi-frequency self-matching network, and the output end of the multi-frequency self-matching network is connected with the input end of the harmonic suppression network.
The invention has the beneficial effects that: the multi-frequency rectifying circuit in the embodiment has a plurality of frequency self-matching structures working in different frequency bands, the frequency self-matching structure of each frequency band only has a rectifying effect at a specific frequency point, and shows a reflecting characteristic in other frequency bands, the frequency self-matching structures of the different frequency bands are connected in parallel and then output to a load through a harmonic suppression network, and the harmonic suppression network can filter signals output to the load; through using the frequency self-matching structure, the introduction of an additional complex multi-frequency impedance matching network is avoided, so that the loss generated by the complex multi-frequency matching network is avoided, and therefore the multi-frequency rectifying circuit in the embodiment can have higher rectifying efficiency in different frequency bands, and has the advantages of simple and compact structure, easiness in expanding the working frequency through increasing the frequency self-matching structure and the like.
Drawings
FIG. 1 is a schematic circuit topology diagram of a microstrip structure in an embodiment;
FIG. 2 is a schematic diagram of a microstrip structure manufactured by PCB printing technology in the embodiment;
FIGS. 3 and 4 are schematic views of FIG. 2 with parts labeled, respectively;
FIG. 5 is a graph of return loss of a circuit with different electrical lengths of a single-frequency self-matching structure simulated in an embodiment as a function of frequency;
FIG. 6 is a graph of return loss of a circuit with different electrical lengths of the dual-frequency self-matching structure simulated in the embodiment as a function of frequency;
FIG. 7 is a graph of return loss of a circuit of a three-frequency self-matching structure obtained by simulation and test in an embodiment varying with frequency under different electrical lengths, in which a solid line represents a test value and a dotted line represents a simulation value;
fig. 8 is a schematic diagram of a result of a three-frequency self-matching structure obtained by simulation and test in the embodiment that the rectification efficiency changes with frequency under different input powers, wherein a solid line represents a test value, and a dotted line represents a simulation value;
fig. 9 is a schematic diagram of results of a three-frequency self-matching structure obtained through simulation and actual measurement in the embodiment under different operating frequencies and different input powers, in which a solid line represents a test value, and a dotted line represents a simulation value.
Detailed Description
Example 1
In this embodiment, the product of the multi-frequency rectification circuit based on the self-matching structure includes a three-layer structure, which is a microstrip structure, a dielectric substrate and a ground wire from top to bottom. In this example, the dielectric substrate was made of Rogers R4003C material, and had a thickness of 0.813mm and a dielectric constant of 3.38.
The micro-strip structure is fixed on one surface of the dielectric substrate, and the ground wire is fixed on the other surface of the dielectric substrate, or the micro-strip structure is directly manufactured on one surface of the dielectric substrate and the ground wire is manufactured on the other surface of the dielectric substrate through a PCB printing process, so that the product of the multi-frequency rectifying circuit based on the self-matching structure in the embodiment can be obtained.
In this embodiment, for the technical features of the ground line, the lead line, the microstrip line, and the like, the names of the "line" are understood from the physical perspective, and they may be structures having a length much larger than a width, and they may also be understood from the circuit principle or the circuit topology, and they may be represented as lines in the mathematical sense, but may be structures having a shape, such as a copper foil, and the like, in the physical sense, that is, although the means of the ground line, the microstrip line, and the like in this embodiment are not necessarily represented as "lines" in the visual sense, the "lines" still have the meaning of the "lines".
In this embodiment, a circuit topology of a microstrip structure is shown in fig. 1, and the microstrip structure includes an input matching network 101, a multi-frequency self-matching network 102, and a harmonic suppression network 103. Referring to fig. 1, an input matching network 101, a multi-frequency self-matching network 102 and a harmonic suppression network 103 are sequentially connected in series, specifically, an output end of the input matching network 101 is connected to an input end of the multi-frequency self-matching network 102, and an output end of the multi-frequency self-matching network 102 is connected to an input end of the harmonic suppression network 103.
In this embodiment, referring to fig. 1, the input matching network 101 includes a first conductive wire, a first microstrip line 1, and a capacitor 2. The first microstrip line 1 and the capacitor 2 are connected by the first conducting wire, and one end of the first conducting wire, i.e. the left end of the first conducting wire shown in fig. 1, is used as the input end of the input matching network 101, because the input end of the input matching network 101 in this embodiment is also the input end of the whole multi-frequency rectifying circuit, one end of the first conducting wire in this embodiment is also the input end of the multi-frequency rectifying circuit.
Referring to fig. 1, in an input matching network 101, one end of a first microstrip line 1 is connected to a first wire, and the other end of the first microstrip line 1 is open-circuited. One end of the capacitor 2 is connected to the other end of the first conducting wire, and the other end of the capacitor 2 is used as an output end of the input matching network 101, that is, the other end of the capacitor 2 is connected to an input end of the multi-frequency self-matching network 102.
In this embodiment, the multi-frequency self-matching network 102 includes a second conductive line and a plurality of frequency self-matching structures. Referring to fig. 1, one end of the second conducting wire is connected to the output end of the input matching network 101, specifically to the other end of the capacitor 2, that is, one end of the second conducting wire is used as the input end of the multi-frequency self-matching network 102; the other end of the second wire is connected to the input end of the harmonic suppression network 103, that is, the other end of the second wire serves as the output end of the multi-frequency self-matching network 102.
The multi-frequency self-matching network 102 includes three frequency self-matching structures, i.e., a first frequency self-matching structure 1021, a second frequency self-matching structure 1022, and a third frequency self-matching structure 1023, and the circuit topology of each frequency self-matching structure may be the same. Referring to fig. 1, each frequency self-matching structure includes a schottky diode and a second microstrip line, wherein a cathode of the schottky diode is connected to the second wire, an anode of the schottky diode is connected to one end of the second microstrip line, and the other end of the second microstrip line is grounded.
Referring to fig. 1, specifically, the first frequency self-matching structure 1021 includes a schottky diode 3 and a second microstrip line 4, wherein a cathode of the schottky diode 3 is connected to the second conductive line, an anode of the schottky diode 3 is connected to one end of the second microstrip line 4, and the other end of the second microstrip line 4 is grounded; the second frequency self-matching structure 1022 includes a schottky diode 5 and a second microstrip line 6, wherein a cathode of the schottky diode 5 is connected to the second wire, an anode of the schottky diode 5 is connected to one end of the second microstrip line 6, and the other end of the second microstrip line 6 is grounded; the third frequency self-matching structure 1023 includes a schottky diode 7 and a second microstrip line 8, wherein a cathode of the schottky diode 7 is connected to the second wire, an anode of the schottky diode 7 is connected to one end of the second microstrip line 8, and the other end of the second microstrip line 8 is grounded.
In this embodiment, the schottky diodes 3, 5 and 7 may be of the same type, for example, a schottky diode of BAT15-03w is used.
Referring to fig. 1, a first frequency self-matching structure 1021, a second frequency self-matching structure 1022, and a third frequency self-matching structure 1023 are connected in parallel to form a parallel structure, one end of the parallel structure is connected to the second conductor, and the other end of the parallel structure is connected to ground.
In this embodiment, the first frequency self-matching structure 1021 has a first electrical length, and accordingly, when the multi-frequency rectifying circuit is powered on to operate, the first frequency self-matching structure 1021 has a first operating frequency, and the first operating frequency is determined by the first electrical length; the second frequency self-matching structure 1022 has a second electrical length, and accordingly the second frequency self-matching structure 1022 has a second operating frequency when the multi-frequency rectifying circuit is powered on to operate, and the second operating frequency is determined by the second electrical length; the third frequency self-matching structure 1023 has a third electrical length, and accordingly the third frequency self-matching structure 1023 has a third operating frequency when the multi-frequency rectifier circuit is electrically operated, the third operating frequency being determined by the third electrical length. In this embodiment, when the circuit topologies of the first frequency self-matching structure 1021, the second frequency self-matching structure 1022, and the third frequency self-matching structure 1023 are as shown in fig. 1, the first electrical length of the first frequency self-matching structure 1021 is determined by the length of the second microstrip line 4, the second electrical length of the second frequency self-matching structure 1022 is determined by the length of the second microstrip line 6, and the third electrical length of the third frequency self-matching structure 1023 is determined by the length of the second microstrip line 8.
In this embodiment, the harmonic suppression network 103 includes a third wire and a plurality of segment branches. Referring to fig. 1, one end of the third wire is connected to the output end of the multi-frequency self-matching network 102, specifically to the cathodes of the schottky diode 3, the schottky diode 5 and the schottky diode 7, that is, one end of the third wire is used as the input end of the harmonic suppression network 103; the other end of the third wire is connected to a load 104, i.e. the other end of the third wire serves as the output of the harmonic rejection network 103.
In this embodiment, the number of the sector branches included in the harmonic suppression network 103 is the same as the number of the frequency self-matching structures included in the multi-frequency self-matching network 102. In fig. 1, the multi-frequency self-matching network 102 includes three frequency self-matching structures, and therefore the harmonic suppression network 103 includes three sector branches, i.e., a first sector branch 9, a second sector branch 10, and a third sector branch 11, and the equivalent electrical length of each sector branch is a quarter wavelength of the corresponding frequency. In this embodiment, the equivalent electrical length of the first fan-shaped branch 9 is one fourth of the wavelength corresponding to the first operating frequency; the equivalent electrical length of the second fan-shaped branch 10 is one fourth of the wavelength corresponding to the second working frequency; the equivalent electrical length of the third fan-shaped branch 11 is one fourth of the wavelength corresponding to the third working frequency.
In this embodiment, the first conducting wire, the second conducting wire and the third conducting wire may be microstrip lines.
In this embodiment, a circuit shown in fig. 2 is fabricated on one surface of a dielectric substrate by a technical means such as PCB printing, so as to realize the multi-frequency rectifier circuit shown in fig. 1. And the other surface of the dielectric substrate is provided with a ground wire, and the part of the multi-frequency rectifying circuit, which needs to be grounded, is connected with the ground wire positioned on the other surface of the dielectric substrate through a metalized through hole penetrating through the dielectric substrate, so that the grounding of a circuit device is realized.
Fig. 3 is a diagram showing the correspondence between each part of the multi-frequency rectifier circuit and the circuit topology shown in fig. 1 on the basis of fig. 2, and fig. 4 is a diagram showing the correspondence between each device of the multi-frequency rectifier circuit and the circuit topology shown in fig. 1 on the basis of fig. 2. The 1.3/7 labeled on fig. 2, 3 and 4, etc. represent the physical dimensions of the corresponding components in the multi-frequency rectifier circuit: width/length
In the multi-frequency rectifier circuit shown in fig. 1, 2, 3 or 4, an input end of the input matching network 101, i.e., one end of the first wire, is connected to the radio frequency source, and an output end of the harmonic suppression network 103, i.e., the other end of the third wire, is connected to the load 104. When the multi-frequency rectifying circuit in this embodiment is actually used to supply power to an electric device, the radio frequency source connected to the multi-frequency rectifying circuit may be a radio frequency antenna that receives microwave energy, and the load 104 connected to the multi-frequency rectifying circuit may be an electric device such as an internet of things device.
By configuring the operating frequencies of the frequency self-matching structures in the multi-frequency self-matching network 102, for example, by setting the electrical lengths of the second microstrip line 4, the second microstrip line 6 and the second microstrip line 8, so that the first frequency self-matching structure 1021, the second frequency self-matching structure 1022 and the third frequency self-matching structure 1023 operate at the first operating frequency, the second operating frequency and the third operating frequency, respectively, when the microwave energy input to the multi-frequency rectifying circuit from the radio frequency source is dispersed in a plurality of frequency bands including at least one of the first operating frequency, the second operating frequency and the third operating frequency, the first frequency self-matching structure 1021 has a better response to the microwave energy distributed at and around the first operating frequency, and exhibits a reflective characteristic for the microwave energy of other frequencies, that is, the first frequency self-matching structure 1021 rectifies the microwave energy distributed at and around the first operating frequency, reflecting microwave energy of other frequencies; the second frequency self-matching structure 1022 has a better response to microwave energy distributed at and near the second operating frequency, and exhibits a characteristic of reflection for microwave energy of other frequencies, that is, the second frequency self-matching structure 1022 rectifies the microwave energy distributed at and near the second operating frequency, and reflects the microwave energy of other frequencies; the third frequency self-matching structure 1023 has a good response to microwave energy distributed at and near the third operating frequency and exhibits a reflective characteristic to microwave energy at other frequencies, i.e. the third frequency self-matching structure 1023 rectifies the microwave energy distributed at and near the third operating frequency and reflects microwave energy at other frequencies.
On the basis of the multi-frequency self-matching network 102, a harmonic suppression network 103 is arranged to be matched with the multi-frequency self-matching network 102, and harmonic suppression is performed on rectified microwave energy. In this embodiment, the equivalent electrical length of the first fan-shaped branch 9 is one fourth of the wavelength corresponding to the first operating frequency, and the first fan-shaped branch 9 performs harmonic suppression on the microwave energy distributed at the first operating frequency; the equivalent electrical length of the second fan-shaped branch 10 is one fourth of the wavelength corresponding to the second working frequency, and the second fan-shaped branch 10 performs harmonic suppression on the microwave energy distributed at the second working frequency; the equivalent electrical length of the third fan-shaped branch 11 is one fourth of the wavelength corresponding to the third working frequency, and the third fan-shaped branch 11 performs harmonic suppression on the microwave energy distributed at the third working frequency.
Through the multi-frequency self-matching network 102 and the harmonic suppression network 103, the multi-frequency rectification circuit in the embodiment can rectify and suppress microwave energy of multiple frequencies such as the first working frequency, the second working frequency, the third working frequency and the like, and has a reflection effect on microwave energy of other frequencies. In this embodiment, the open-circuit first microstrip line 1 disposed in the input matching network 101 can perform impedance matching, and the capacitor 2 can perform dc isolation and ac isolation, thereby improving the efficiency of the multi-frequency rectifier circuit.
Example 2
The circuit simulation software is used for building a circuit similar to the circuit shown in fig. 1, and different from the circuit shown in fig. 1, only one frequency self-matching structure is arranged in a multi-frequency self-matching network in the circuit built in the circuit simulation software, and a fan-shaped branch corresponding to the frequency self-matching structure is arranged in a harmonic suppression network. The circuit built in the circuit simulation software is simulated, the impedance of the grounding microstrip line of the frequency self-matching structure of the circuit is set to be 50 ohms, the electrical length theta of the grounding microstrip line is taken as a variable, and a curve of the return loss of the circuit changing along with the frequency under different electrical lengths theta obtained through simulation is shown in fig. 5. Fig. 5 shows that the self-matching structure composed of grounded microstrip lines of different electrical lengths will only respond to a specific frequency.
A circuit similar to the circuit shown in fig. 1 is built by using circuit simulation software, and different from the circuit shown in fig. 1, only two frequency self-matching structures are arranged in a multi-frequency self-matching network in the circuit built in the circuit simulation software, the electrical lengths of grounding microstrip lines in the two frequency self-matching structures are respectively 78 degrees and 58 degrees, and the impedances are both 50 ohms. Meanwhile, the harmonic suppression network is provided with two fan-shaped branches, and the working frequencies of the two fan-shaped branches respectively correspond to two frequency self-matching structures in the multi-frequency self-matching network. The circuit built in the circuit simulation software is simulated, and the obtained return loss curve is shown as a double-frequency curve in fig. 6.
A multi-frequency rectifying circuit shown in fig. 1 is built by using circuit simulation software, namely, a multi-frequency self-matching network in a circuit built in the circuit simulation software has three frequency self-matching structures, the electrical lengths of grounding microstrip lines in the three frequency self-matching structures are initially set to be 81.5 degrees, 78 degrees and 58 degrees respectively, and the impedances are all 50 ohms. The method includes the steps that a circuit built in circuit simulation software is simulated, the length and the width of a grounded microstrip line are adjusted during simulation, the working frequencies of three frequency self-matching structures are respectively configured to be 1.8GHz, 2.4GHz and 5.1GHz, the input frequencies of an analog radio frequency source to a multi-frequency rectifying circuit are respectively f 1-1.8 GHz, f 2-2.4 GHz and f 3-5.1 GHz microwave energy, the load connected with the multi-frequency rectifying circuit is 2400 ohm pure resistance, the obtained return loss curve is shown as a dotted line of a three-frequency curve in fig. 7, as can be seen from fig. 7, the working frequencies of the multi-frequency rectifying circuit are always stabilized around 1.78GHz, 2.35GHz and 4.97GHz during actual measurement under different input powers, the return losses of working frequency points are all lower than-10 dB, impedance matching on the three working frequencies is achieved, and compared with simulation, the actually tested frequency is smaller. Fig. 8 is a simulation and test result of the change of the rectification efficiency with the frequency of the multi-frequency rectification circuit under different input powers, wherein the ordinate represents the rectification efficiency, the abscissa represents the frequency, the solid line represents the test result, and the dotted line represents the simulation result. As can be seen from fig. 8, the actually tested rectification efficiencies at 1.78GHz, 2.35GHz and 4.97GHz reach 63.79%, 70.52% and 53.1%, respectively, and the input power is 5dBm at this time, and the actually tested result and the simulation have a certain deviation, which is mainly caused by the circuit processing accuracy and the inaccuracy of the diode simulation model. Fig. 9 is an efficiency curve at different input powers at the optimum frequency for simulation and test, and the ordinate in fig. 9 represents the rectification efficiency in%, the solid line representing the test result, and the broken line representing the simulation result. As can be seen from FIG. 9, the input power with the rectification efficiency of more than 50% is from-5 dBm to 9dBm when the frequency converter works at 1.78GHz, the input power with the rectification efficiency of more than 50% is from-7 dBm to 9dBm when the frequency converter works at 2.35GHz, and the input power with the rectification efficiency of more than 40% is from-6 dBm to 10dBm when the frequency converter works at 4.97GHz, and the above results prove the accuracy and feasibility of the design theory of the invention.
Example 3
In manufacturing the self-matching structure-based multi-frequency rectifier circuit in embodiment 1, the following steps may be performed:
s1, obtaining a medium substrate;
s2, manufacturing a micro-strip structure on one surface of the medium substrate;
s3, manufacturing a ground wire on the other surface of the medium substrate;
and S4, manufacturing a metalized through hole penetrating through the dielectric substrate, so that the part needing to be grounded in the multi-frequency rectifying circuit is connected with a ground wire.
In step S1, a dielectric substrate made of Rogers R4003C with a thickness of 0.813mm and a dielectric constant of 3.38 can be obtained by a home-made or purchased method. In steps S2 and S3, a microstrip structure and a ground line are fabricated on both sides of the dielectric substrate by a PCB printing technique, wherein the microstrip structure has a specific structure as described in embodiment 1, and includes an input matching network, a multi-frequency self-matching network, and a harmonic suppression network, an output terminal of the input matching network is connected to an input terminal of the multi-frequency self-matching network, and an output terminal of the multi-frequency self-matching network is connected to an input terminal of the harmonic suppression network.
It should be noted that, unless otherwise specified, when a feature is referred to as being "fixed" or "connected" to another feature, it may be directly fixed or connected to the other feature or indirectly fixed or connected to the other feature. Furthermore, the descriptions of upper, lower, left, right, etc. used in the present disclosure are only relative to the mutual positional relationship of the constituent parts of the present disclosure in the drawings. As used in this disclosure, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. In addition, unless defined otherwise, all technical and scientific terms used in this example have the same meaning as commonly understood by one of ordinary skill in the art. The terminology used in the description of the embodiments herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used in this embodiment, the term "and/or" includes any combination of one or more of the associated listed items.
It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element of the same type from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present disclosure. The use of any and all examples, or exemplary language ("e.g.," such as "or the like") provided with this embodiment is intended merely to better illuminate embodiments of the invention and does not pose a limitation on the scope of the invention unless otherwise claimed.
It should be recognized that embodiments of the present invention can be realized and implemented by computer hardware, a combination of hardware and software, or by computer instructions stored in a non-transitory computer readable memory. The methods may be implemented in a computer program using standard programming techniques, including a non-transitory computer-readable storage medium configured with the computer program, where the storage medium so configured causes a computer to operate in a specific and predefined manner, according to the methods and figures described in the detailed description. Each program may be implemented in a high level procedural or object terminal oriented programming language to communicate with a computer system. However, the program(s) can be implemented in assembly or machine language, if desired. In any case, the language may be a compiled or interpreted language. Furthermore, the program can be run on a programmed application specific integrated circuit for this purpose.
Further, operations of processes described in this embodiment can be performed in any suitable order unless otherwise indicated herein or otherwise clearly contradicted by context. The processes described in this embodiment (or variations and/or combinations thereof) may be performed under the control of one or more computer systems configured with executable instructions, and may be implemented as code (e.g., executable instructions, one or more computer programs, or one or more applications) collectively executed on one or more processors, by hardware, or combinations thereof. The computer program includes a plurality of instructions executable by one or more processors.
Further, the method may be implemented in any type of computing platform operatively connected to a suitable interface, including but not limited to a personal computer, mini computer, mainframe, workstation, networked or distributed computing environment, separate or integrated computer platform, or in communication with a charged particle tool or other imaging device, and the like. Aspects of the invention may be embodied in machine-readable code stored on a non-transitory storage medium or device, whether removable or integrated into a computing platform, such as a hard disk, optically read and/or write storage medium, RAM, ROM, or the like, such that it may be read by a programmable computer, which when read by the storage medium or device, is operative to configure and operate the computer to perform the procedures described herein. Further, the machine-readable code, or portions thereof, may be transmitted over a wired or wireless network. The invention described in this embodiment includes these and other different types of non-transitory computer-readable storage media when such media include instructions or programs that implement the steps described above in conjunction with a microprocessor or other data processor. The invention also includes the computer itself when programmed according to the methods and techniques described herein.
A computer program can be applied to input data to perform the functions described in the present embodiment to convert the input data to generate output data that is stored to a non-volatile memory. The output information may also be applied to one or more output devices, such as a display. In a preferred embodiment of the present invention, the transformed data represents a physical and tangible target terminal, including a particular visual depiction of the physical and tangible target terminal produced on a display.
The above description is only a preferred embodiment of the present invention, and the present invention is not limited to the above embodiment, and any modifications, equivalent substitutions, improvements, etc. within the spirit and principle of the present invention should be included in the protection scope of the present invention as long as the technical effects of the present invention are achieved by the same means. The invention is capable of other modifications and variations in its technical solution and/or its implementation, within the scope of protection of the invention.
Claims (10)
1. The utility model provides a multifrequency rectifier circuit based on from matching structure which characterized in that includes:
a dielectric substrate;
a microstrip structure; the microstrip structure is fixed on one surface of the dielectric substrate; the microstrip structure comprises an input matching network, a multi-frequency self-matching network and a harmonic suppression network, wherein the output end of the input matching network is connected with the input end of the multi-frequency self-matching network, and the output end of the multi-frequency self-matching network is connected with the input end of the harmonic suppression network.
2. The multi-frequency rectifier circuit according to claim 1, further comprising a ground line fixed to the other surface of the dielectric substrate; the input end of the input matching network is connected to a radio frequency source, and the output end of the harmonic suppression network is connected to a load.
3. The multi-frequency rectifier circuit of claim 1 wherein the input matching network comprises:
a first conductive line; one end of the first conducting wire is used as an input end of the input matching network;
a first microstrip line; one end of the first microstrip line is connected with the first lead, and the other end of the first microstrip line is open-circuited;
a capacitor; one end of the capacitor is connected with the other end of the first lead, and the other end of the capacitor is used as the output end of the input matching network.
4. The multi-frequency rectifier circuit of claim 1 wherein said multi-frequency self-matching network comprises:
a second conductive line; one end of the second wire is used as the input end of the multi-frequency self-matching network, and the other end of the second wire is used as the output end of the multi-frequency self-matching network;
a plurality of frequency self-matching structures; one end of each frequency self-matching structure is connected with the second lead, and the other end of each frequency self-matching structure is grounded.
5. The multi-frequency rectifier circuit of claim 4 wherein said frequency self-matching structure comprises:
the cathode of the Schottky diode is connected with the second lead;
a second microstrip line; one end of the second microstrip line is connected with the anode of the Schottky diode, and the other end of the second microstrip line is grounded.
6. The multi-frequency rectifier circuit of claim 4 wherein said harmonic rejection network comprises:
a third conductive line; one end of the third wire is used as the input end of the harmonic suppression network, and the other end of the third wire is used as the output end of the harmonic suppression network;
a plurality of fan-shaped branches; each fan-shaped branch knot is connected with the third lead; the number of the fan-shaped branches is equal to that of the frequency self-matching structures.
7. The multi-frequency rectifier circuit of claim 6 wherein the plurality of frequency self-matching structures includes a first frequency self-matching structure having a first electrical length corresponding to a first operating frequency, a second frequency self-matching structure having a second electrical length corresponding to a second operating frequency, and a third frequency self-matching structure having a third electrical length corresponding to a third operating frequency.
8. The multi-frequency rectifier circuit of claim 7 wherein the plurality of fan-shaped branches includes a first fan-shaped branch, a second fan-shaped branch, and a third fan-shaped branch, wherein an equivalent electrical length of the first fan-shaped branch is a quarter of a wavelength corresponding to an operating frequency of the first fan-shaped branch, an equivalent electrical length of the second fan-shaped branch is a quarter of a wavelength corresponding to an operating frequency of the second fan-shaped branch, and an equivalent electrical length of the third fan-shaped branch is a quarter of a wavelength corresponding to an operating frequency of the third fan-shaped branch.
9. The multi-frequency rectification circuit according to any one of claims 1 to 8, wherein the dielectric substrate is made of Rogers R4003C, the thickness of the dielectric substrate is 0.813mm, and the dielectric constant of the dielectric substrate is 3.38.
10. A manufacturing method of a multi-frequency rectifying circuit based on a self-matching structure is characterized by comprising the following steps:
obtaining a dielectric substrate;
manufacturing a micro-strip structure on one surface of the dielectric substrate; the microstrip structure comprises an input matching network, a multi-frequency self-matching network and a harmonic suppression network, wherein the output end of the input matching network is connected with the input end of the multi-frequency self-matching network, and the output end of the multi-frequency self-matching network is connected with the input end of the harmonic suppression network.
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