CN111987401A - Ridge waveguide to microstrip line ultra wide band transition structure based on quartz probe - Google Patents
Ridge waveguide to microstrip line ultra wide band transition structure based on quartz probe Download PDFInfo
- Publication number
- CN111987401A CN111987401A CN202010817409.8A CN202010817409A CN111987401A CN 111987401 A CN111987401 A CN 111987401A CN 202010817409 A CN202010817409 A CN 202010817409A CN 111987401 A CN111987401 A CN 111987401A
- Authority
- CN
- China
- Prior art keywords
- probe
- ridge waveguide
- waveguide
- ridge
- microstrip line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
- H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced with unbalanced lines or devices
- H01P5/107—Hollow-waveguide/strip-line transitions
Abstract
The invention belongs to the technical field of microwave/millimeter wave. The transition structure comprises a ridge waveguide, a micro-strip probe structure arranged on a quartz medium substrate and an air cavity. The top surface of the ridge waveguide is provided with an input port, and the bottom surface of the ridge waveguide is provided with a waveguide short-circuit surface; the micro-strip probe structure is embedded into the ridge waveguide from one side surface of the ridge waveguide along the direction perpendicular to the embedding surface and is positioned between the ridge and the waveguide short-circuit surface, so that current is excited to realize electromagnetic energy coupling. The invention is based on the electromagnetic coupling principle and the ultra-wideband impedance matching principle, adopts the ridge waveguide and the microstrip line to be combined, and realizes the impedance matching of the probe transition structure in the ultra-wideband range by optimizing the shape of the quartz probe and the structural size of the ridge waveguide. The working bandwidth of the single-module multiband antenna can reach five frequency doubling, four adjacent bands are covered, the multiband application of a single module is realized, the structure is compact, the size is small, and the processing and the assembly are easy.
Description
Technical Field
The invention relates to the technical field of microwave/millimeter wave, in particular to a ridge waveguide to microstrip line ultra wide band transition structure based on a quartz probe.
Background
In recent years, due to the rapid development of communication systems, limited spectrum resources have been unable to satisfy the current communication of massive amounts of data. In order to expand the frequency spectrum of a communication system, effectively improve the communication rate, and explore and research towards millimeter wave and even higher frequency bands, the research and research have become reluctant. With the increase of operating frequency, waveguide devices are widely used in microwave circuit systems due to their characteristics of low loss, large power capacity, etc. The connection of the active circuit needs to be realized by planar transmission lines, which requires designing a transition structure between the waveguide and the microstrip to realize the integration of the radio frequency circuit system.
The waveguide-microstrip transition structure mainly has transition forms such as a fin line and a probe. The waveguide-microstrip probe transition structure is widely applied to miniaturized devices. The waveguide-microstrip probe transition commonly adopted at present is mainly a rectangular waveguide-microstrip transition structure.
The rectangular waveguide-microstrip transition structure is formed by combining a rectangular waveguide with a microstrip probe, and arranging the microstrip probe in a waveguide TE10And at the place where the electric field of the mode is strongest, the electromagnetic wave in the rectangular waveguide is coupled out through a metal probe to realize transition. As shown in fig. 1, the operating bandwidth of this transition structure is limited by the rectangular waveguide, and it is difficult to simultaneously span multiple operating frequency bands. Therefore, in some ultra-wideband working scenes, multiple sets of transmission links have to be adopted in engineering to work in parallel to guarantee the working bandwidth of the transmission links. This not only increases the volume and weight of the system, but also increases the cost significantly; on the other hand, the impedance conversion section in the structure adopts a multi-stage impedance conversion section, in order to prevent high-order mode transmission, air cavities are respectively arranged on the impedance conversion section and the microstrip line, and the heights of the 2 air cavities are different, so that the arrangement is relatively complex in manufacturing process.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a ridge waveguide to microstrip line ultra-wideband transition structure based on a quartz probe, which aims to solve the problems of limited working frequency band, complex process and high cost of a rectangular waveguide-microstrip transition structure in the prior art. The transition structure optimizes the shape of the quartz probe and the size of the ridge waveguide structure based on the electromagnetic coupling principle and the ultra-wideband impedance matching principle, and realizes the impedance matching of the probe transition structure in the ultra-wideband range. The ultra-wideband antenna has the advantages of low loss, compact structure, low cost, easy processing and assembly and the like.
In order to achieve the purpose, the invention adopts the following technical scheme:
a ridge waveguide to microstrip line ultra wide band transition structure based on quartz probe, includes: the system comprises a ridge waveguide, a micro-strip probe structure tightly attached to a quartz medium substrate and an air cavity;
the ridge waveguide is provided with a top surface, a bottom surface, a side surface and a ridge, wherein the top surface is provided with an input port, and the bottom surface is provided with a waveguide short-circuit surface;
the microstrip probe structure includes: the probe, the high-impedance transformation section and the microstrip line are connected from left to right in sequence; the probe is embedded into the ridge waveguide from one side surface of the ridge waveguide and is vertical to the embedded surface, and the probe is positioned between the ridge and the waveguide short-circuit surface and used for exciting current and realizing electromagnetic energy coupling; in order to reduce the loss of the transition structure, the high-impedance conversion section and the microstrip line are both arranged in the air cavity, and the high-impedance conversion section is used for realizing impedance matching with the microstrip line; the microstrip line is used as an output end and connected with an external chip;
the air cavity, the high-impedance conversion section and the microstrip line share the quartz medium substrate, the air cavity is small in size, the high-impedance conversion section and the microstrip line are used for preventing high-order mode transmission, transmission loss of a transition structure is reduced, and the ultra-wideband working bandwidth is favorably realized. The height of the air cavity is based on 10 times of the thickness of the substrate, and the length of the cavity is as short as possible so as to reduce the transmission loss of the microstrip line.
Furthermore, the length of the ridge in the ridge waveguide is 2.58-2.78 mm, and the width of the ridge in the ridge waveguide is 1.25-2.85 mm; the length of the probe is 1.30-2.99 mm, and the width of the probe is 0.44-0.81 mm; the vertical distance between the probe and the ridge is 0.01-0.05 mm; the impedance matching is realized better, and the ultra-wideband working bandwidth is further realized.
Furthermore, when the vertical distance between the probe and the short-circuit surface of the waveguide is 1/4 wave guide length, the electromagnetic coupling efficiency is maximum, the energy transmission loss is lower, and therefore the working bandwidth can be further improved.
Furthermore, the ridge waveguide is of a symmetrical structure, and the central line of the probe is located on the central line plane of the ridge waveguide.
Further, the high impedance transformation section is a quarter-wavelength impedance transformation section, and the microstrip line is a 50-ohm standard microstrip line.
The invention designs the ultra-wideband waveguide-microstrip transition structure based on the characteristic that the cutoff wavelength of the ridge waveguide main mode is longer than that of the rectangular waveguide under the same size; the energy transmission is realized by the form of microstrip probe coupling. When an electromagnetic wave signal passes through the transition structure provided by the invention, the TE10 mode in the ridge waveguide is converted into a quasi-TEM mode in the microstrip line. Specifically, when an electromagnetic wave signal is fed from the top wall input port of the ridge waveguide, and is transmitted in the ridge waveguide in the TE10 mode, the electromagnetic wave signal is divided into two parts, and one part of the electromagnetic wave signal is coupled by the probe; and another part of electromagnetic wave signals are continuously transmitted to the waveguide short-circuit surface in the ridge waveguide cavity, total reflection occurs at the waveguide short-circuit surface, the reflected electromagnetic wave signals are transmitted to the probe 7 from the waveguide short-circuit surface through a path with the same distance, and in-phase superposition is realized with the electromagnetic wave signals transmitted in the forward direction (namely the electromagnetic wave signals transmitted to the waveguide short-circuit surface), so that the electric field intensity at the probe is strongest, and the electromagnetic wave energy in the waveguide is further effectively coupled into the microstrip line.
In summary, due to the adoption of the technical scheme, the invention has the following advantages:
1. the transition structure of the invention adopts the combination of the ridge waveguide and the microstrip line, so that the single-mode working frequency band is wider, and the ultra-wide working bandwidth is more favorably realized. The transition structure is based on an electromagnetic coupling principle and an ultra-wideband impedance matching principle, and realizes impedance matching of the probe transition structure in an ultra-wideband range by optimizing the shape of the quartz probe and the size of the ridge waveguide structure. The working bandwidth of the transition structure can reach five frequency doubling, four adjacent wave bands are covered, the application of single-module multi-wave bands is realized, and the volume and the weight of the whole communication system are reduced.
2. The probe in the transition structure is embedded into the ridge waveguide from one side surface of the ridge waveguide and is vertical to the embedding surface; the whole structure is compact, the integration is easy, and the manufacturing cost is low.
3. The characteristic impedance of the microstrip line in the transition structure adopts standard 50 ohm, can be directly interconnected with an MMIC chip, and is more convenient when being integrated with other devices.
4. The quartz substrate in the transition structure has small transmission loss in a high-frequency band, and the micro-strip probe based on the quartz substrate has high preparation precision and is easy to assemble.
Drawings
The features and advantages of the invention may be more clearly understood by reference to the accompanying drawings, which are schematic and should not be construed as limiting the invention in any way, in which:
FIG. 1 is a schematic diagram of a prior art waveguide-microstrip probe transition structure;
FIG. 2 is a three-dimensional schematic diagram of an embodiment of the present invention;
FIG. 3 is a top view of an embodiment of the present invention;
FIG. 4 is a graph of reflection versus frequency for an input port according to an embodiment of the present invention, indicated at S11;
fig. 5 is a transmission characteristic curve of the embodiment.
Detailed Description
The technical scheme provided by the invention is further explained in detail by taking a transition structure from ridge waveguide with an operating bandwidth spanning four wave bands of X, Ku, K and Ka to a microstrip line as an example.
The invention provides a ridge waveguide to microstrip line ultra-wideband transition structure based on a quartz probe, which comprises a ridge waveguide 3, a microstrip probe structure tightly attached to a quartz medium substrate 2 and an air cavity 6, as shown in fig. 2 and 3. The ridge waveguide 3 has: top, side, ridge 10 and bottom surfaces; the top surface of the ridge waveguide 3 is provided with an input port 1, and the bottom surface is provided with a waveguide short-circuit surface 4. Microstrip probe structure: the device comprises a probe 7, a quarter-wavelength impedance transformation section 8 and a 50-ohm standard microstrip line 9 which are sequentially connected from left to right; the probe 7 is embedded into the ridge waveguide 3 from one side surface of the ridge waveguide 3 along the vertical direction of the embedded surface and is positioned at the maximum of the mode electric field intensity of the main mode TE10 between the ridge 10 and the short-circuit surface of the waveguide, and the probe is excited to generate current so as to realize the maximum coupling of electromagnetic energy; the quarter-wavelength impedance transformation section 8 and the 50-ohm standard microstrip line 9 are both arranged in the air cavity 6, and the quarter-wavelength impedance transformation section 8 is used for realizing impedance matching between the probe 7 and the 50-ohm standard microstrip line 9; the 50 ohm standard microstrip line 9 is connected with an external chip as an output, and an output port 5 is arranged on the microstrip line. The air cavity 6 is a sealed cavity structure, and shares the quartz medium substrate 2 with the quarter-wavelength impedance transformation section 8 and the 50-ohm standard microstrip line 9. Air chamber 6 has isolated effect to high order mode for prevent high order mode transmission, reduced transition structure's transmission loss, be favorable to realizing the work bandwidth of ultra wide band. The height of the air cavity is based on 10 times of the thickness of the substrate, and the length of the cavity is as short as possible so as to reduce the transmission loss of the microstrip line.
The ridge waveguide 3 is preferably a single ridge waveguide, which is transmitted in a single mode (TE 10 mode as the main mode) to avoid additional insertion loss due to the parasitic mode interference. Furthermore, the ridge waveguide 3 has a symmetrical structure, i.e. the central line of the probe 7 is located on the central plane of the ridge waveguide 3, which is advantageous for processing convenience. In design, the upper surface of the probe 7 should be as close to the ridge 10 of the ridge waveguide 3 as possible, and the vertical distance between the lower surface and the waveguide short-circuit surface 4 is controlled to be 1/4 wave length, so that the electromagnetic signal coupling capability is strongest and the transmission effect is best. The quartz substrate is selected as the material of the dielectric substrate 2, because the quartz substrate has smaller transmission loss in the millimeter wave band compared with the substrate such as Rogers 5880 and the like, which is beneficial to realizing low-loss transmission of a high-frequency transition structure, and the quartz glass substrate is a hard substrate to ensure the mechanical strength and the processing precision of the device and reduce the difficulty of processing and assembling.
The transition structure provided by this embodiment has the following workflow: an electromagnetic wave signal is fed from the input port 1 on the top surface of the ridge waveguide 3, and is divided into two parts when transmitted to the probe 7 in the ridge waveguide 3 in the TE10 mode. Wherein a portion of the electromagnetic wave signal is coupled by the probe 7; the other part of the electromagnetic wave signal continues to propagate in the waveguide cavity of the ridge waveguide 3, reaches the waveguide short-circuit surface 4 after passing through a quarter-wavelength path, and is totally reflected at the waveguide short-circuit surface 4; the reflected electromagnetic wave signal is transmitted to the probe 7 through a path with a quarter wavelength to generate a wave path difference with a half wavelength; at this time, the reflected electromagnetic wave signal and the electromagnetic wave signal transmitted in the original ridge waveguide 3 are superposed in phase, and the electric field of the plane where the probe 7 is located is strongest. Meanwhile, the electromagnetic wave signal is gradually transformed from the TE10 mode in the ridge waveguide to the quasi-TEM mode in the microstrip line through the probe 7, the quarter-wavelength impedance transformation section 8 and the 50-ohm standard microstrip line 9, and finally output from the output port 5.
In this embodiment, the specific dimensions for making the transition mechanism are as follows:
the ridge waveguide 3 has a length of 10.15mm and a width of 3 mm; the ridge 10 has a length of 2.69mm and a width of 1.86 mm. The length of the probe 7 is 2.26mm, and the width is 0.74 mm; the distance from the probe 7 to the ridge 10 is 0.03mm and the distance from the short-circuited surface 4 of the waveguide is 2.3 mm. The length of the quarter-wave impedance transformation section 8 is 0.2mm, and the width is 0.29 mm; the width of the 50 ohm standard microstrip line 9 is 0.263 mm. The length of the quartz medium substrate 2 is 5.56mm, the width is 0.82mm, and the thickness is 0.127 mm; relative dielectric constantrIs 3.78; the air cavity height is 1.2 mm.
The transition structure of this embodiment is simulated by using HFSS software, and the simulation result is as follows:
as shown in FIGS. 4 and 5, the transition structure is in a frequency band of 8-40 GHz: the reflection of the input port is less than or equal to-30 dB, which shows that the structure has the ultra-wideband characteristic; the insertion loss is less than or equal to 0.0045dB, which shows that the structure has excellent mode conversion performance.
According to the embodiment, the ridge waveguide to microstrip line ultra-wideband transition structure based on the quartz probe can span multiple working frequency bands including millimeter waves, the working bandwidth reaches five frequency doubling, the structure is simple, and the ridge waveguide to microstrip line ultra-wideband transition structure based on the probe has very important significance.
The foregoing is only a preferred embodiment of the invention and is provided merely as an aid in understanding the principles of the invention, and the invention is not limited to the foregoing arrangements and embodiments, and other variations and combinations of features which do not depart from the spirit of the invention will become apparent to those skilled in the art from this disclosure and are within the scope of the invention.
Claims (5)
1. A ridge waveguide to microstrip line ultra wide band transition structure based on quartz probe, includes: ridge waveguide, hug closely microstrip probe structure and air chamber on quartz medium base plate, its characterized in that:
the ridge waveguide is provided with a top surface, a bottom surface, a side surface and a ridge, wherein the top surface is provided with an input port, and the bottom surface is provided with a waveguide short-circuit surface;
the microstrip probe structure includes: the probe, the high-impedance transformation section and the microstrip line are connected from left to right in sequence; the probe is embedded into the ridge waveguide from one side surface of the ridge waveguide and is vertical to the embedded surface, and the probe is positioned between the ridge and the waveguide short-circuit surface so as to excite the current and realize electromagnetic energy coupling; the high-impedance transformation section and the microstrip line are both arranged in the air cavity, and the high-impedance transformation section is used for realizing impedance matching with the microstrip line; the microstrip line is used as an output end and connected with an external chip;
the air cavity, the high-impedance conversion section and the microstrip line share the quartz medium substrate and are used for preventing high-order mode transmission.
2. The quartz-probe-based ridge waveguide-to-microstrip line ultra-wideband transition structure of claim 1, wherein: the length of the ridge in the ridge waveguide is 2.58-2.78 mm, and the width of the ridge in the ridge waveguide is 1.25-2.85 mm; the length of the probe is 1.30-2.99 mm, and the width of the probe is 0.44-0.81 mm; the vertical distance between the probe and the ridge is 0.01-0.05 mm.
3. The quartz-probe-based ridge waveguide-to-microstrip line ultra-wideband transition structure of claim 1, wherein: the perpendicular distance between the probe and the short-circuit surface of the waveguide is 1/4 waveguide wavelengths.
4. The quartz-probe-based ridge waveguide-to-microstrip line ultra-wideband transition structure of claim 1, wherein: the ridge waveguide is of a symmetrical structure, and the central line of the probe is located on the central line plane of the ridge waveguide.
5. The quartz-probe-based ridge waveguide-to-microstrip line ultra-wideband transition structure of claim 1, wherein: the high impedance transformation section is a quarter-wavelength impedance transformation section, and the microstrip line is a 50-ohm standard microstrip line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010817409.8A CN111987401A (en) | 2020-08-14 | 2020-08-14 | Ridge waveguide to microstrip line ultra wide band transition structure based on quartz probe |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010817409.8A CN111987401A (en) | 2020-08-14 | 2020-08-14 | Ridge waveguide to microstrip line ultra wide band transition structure based on quartz probe |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111987401A true CN111987401A (en) | 2020-11-24 |
Family
ID=73435196
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010817409.8A Pending CN111987401A (en) | 2020-08-14 | 2020-08-14 | Ridge waveguide to microstrip line ultra wide band transition structure based on quartz probe |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111987401A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113078882A (en) * | 2021-03-31 | 2021-07-06 | 绵阳天赫微波科技有限公司 | 18-40GHz power amplifier module |
| CN113161705A (en) * | 2021-06-11 | 2021-07-23 | 四川斯艾普电子科技有限公司 | Radio frequency adapter plate and radio frequency adapter implementation method |
| CN114497950A (en) * | 2022-01-20 | 2022-05-13 | 电子科技大学 | Terahertz waveguide probe transition structure for higher-order mode suppression |
| CN114899570A (en) * | 2022-06-13 | 2022-08-12 | 电子科技大学成都学院 | Microstrip-waveguide conversion structure with out-of-band suppression function |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5867073A (en) * | 1992-05-01 | 1999-02-02 | Martin Marietta Corporation | Waveguide to transmission line transition |
| JP2006005846A (en) * | 2004-06-21 | 2006-01-05 | Mitsubishi Electric Corp | Waveguide microstrip line transformer |
| CN103022614A (en) * | 2012-12-28 | 2013-04-03 | 电子科技大学 | Transition structure for substrate integrated waveguide and rectangular metal waveguide |
| CN109921164A (en) * | 2019-01-31 | 2019-06-21 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | The contactless microstrip coupled seam probe transitions circuit of ridge waveguide |
| CN110504515A (en) * | 2019-07-15 | 2019-11-26 | 电子科技大学 | A kind of ridge gap waveguide based on probe current coupling is to microstrip line broadband transition structure |
| CN110726882A (en) * | 2019-10-15 | 2020-01-24 | 博微太赫兹信息科技有限公司 | Dual-polarization radiometer suitable for passive security check instrument |
-
2020
- 2020-08-14 CN CN202010817409.8A patent/CN111987401A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5867073A (en) * | 1992-05-01 | 1999-02-02 | Martin Marietta Corporation | Waveguide to transmission line transition |
| JP2006005846A (en) * | 2004-06-21 | 2006-01-05 | Mitsubishi Electric Corp | Waveguide microstrip line transformer |
| CN103022614A (en) * | 2012-12-28 | 2013-04-03 | 电子科技大学 | Transition structure for substrate integrated waveguide and rectangular metal waveguide |
| CN109921164A (en) * | 2019-01-31 | 2019-06-21 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | The contactless microstrip coupled seam probe transitions circuit of ridge waveguide |
| CN110504515A (en) * | 2019-07-15 | 2019-11-26 | 电子科技大学 | A kind of ridge gap waveguide based on probe current coupling is to microstrip line broadband transition structure |
| CN110726882A (en) * | 2019-10-15 | 2020-01-24 | 博微太赫兹信息科技有限公司 | Dual-polarization radiometer suitable for passive security check instrument |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113078882A (en) * | 2021-03-31 | 2021-07-06 | 绵阳天赫微波科技有限公司 | 18-40GHz power amplifier module |
| CN113161705A (en) * | 2021-06-11 | 2021-07-23 | 四川斯艾普电子科技有限公司 | Radio frequency adapter plate and radio frequency adapter implementation method |
| CN114497950A (en) * | 2022-01-20 | 2022-05-13 | 电子科技大学 | Terahertz waveguide probe transition structure for higher-order mode suppression |
| CN114497950B (en) * | 2022-01-20 | 2022-07-29 | 电子科技大学 | Terahertz waveguide probe transition structure for higher-order mode suppression |
| CN114899570A (en) * | 2022-06-13 | 2022-08-12 | 电子科技大学成都学院 | Microstrip-waveguide conversion structure with out-of-band suppression function |
| CN114899570B (en) * | 2022-06-13 | 2023-07-07 | 电子科技大学成都学院 | Microstrip-waveguide conversion structure with out-of-band suppression function |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111987401A (en) | Ridge waveguide to microstrip line ultra wide band transition structure based on quartz probe | |
| CN107732400B (en) | Millimeter wave broadband ridge probe radial waveguide power distribution/synthesizer | |
| CN110504515B (en) | Ridge gap waveguide to microstrip line broadband transition structure based on probe current coupling | |
| CN112736394B (en) | H-plane waveguide probe transition structure for terahertz frequency band | |
| CN111063975B (en) | Ka-band GYSEL power divider based on ridge gap waveguide | |
| CN109672023B (en) | Differential dual-polarized patch antenna based on split resonant ring | |
| CN113328228B (en) | Ultra-wideband transition structure from W-band ridge gap waveguide to microstrip line | |
| CN112290182B (en) | Double-frequency power divider based on substrate integrated coaxial line | |
| CN105977595A (en) | Terminal connection feed-backward type rectangular waveguide-microstrip transition device | |
| CN113517527B (en) | Single-sided double-ridge double-probe waveguide power divider, power combiner and synthesis method | |
| CN110492212B (en) | Ultra-wideband power distribution synthesizer based on ridge gap waveguide technology | |
| CN113270705B (en) | Microstrip line probe conversion structure of millimeter wave transceiver antenna | |
| CN113328227A (en) | Transition structure from microstrip line to non-radiative dielectric waveguide | |
| CN107275738B (en) | Waveguide-microstrip power combiner based on magnetic coupling principle | |
| CN115312999A (en) | High-power microwave step-type plug-in piece type waveguide phase shifter | |
| CN110190371B (en) | Waveguide power divider | |
| CN114188686B (en) | H-face waveguide/microstrip probe conversion device | |
| CN210006877U (en) | waveguide power divider | |
| CN110459861B (en) | Double-frequency elliptical slot antenna based on substrate integrated waveguide design | |
| KR100471049B1 (en) | non-radiative dielectric waveguide mixer using a ring hybrid coupler | |
| CN114156624A (en) | Millimeter wave broadband low-loss directional coupler based on gap waveguide structure | |
| CN112615162B (en) | Common-caliber three-frequency multi-mode horn antenna | |
| CN112820610A (en) | Energy transmission coupling structure for ribbon-shaped beam staggered grid traveling wave tube | |
| CN117080705B (en) | Collinear double-ridge waveguide-microstrip line transition circuit | |
| CN112510337B (en) | Cross coupler based on mode synthesis, construction method and impedance matching structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20201124 |
|
| RJ01 | Rejection of invention patent application after publication |