CN111916422B - Power module packaging structure - Google Patents

Power module packaging structure Download PDF

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Publication number
CN111916422B
CN111916422B CN202010668595.3A CN202010668595A CN111916422B CN 111916422 B CN111916422 B CN 111916422B CN 202010668595 A CN202010668595 A CN 202010668595A CN 111916422 B CN111916422 B CN 111916422B
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power
power module
terminal
module package
ceramic
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CN111916422A (en
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李道会
李想
马特·帕克伍德
王彦刚
罗海辉
刘国友
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Zhuzhou CRRC Times Semiconductor Co Ltd
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Zhuzhou CRRC Times Semiconductor Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H01L23/49844—Geometry or layout for devices being provided for in H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5386—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/562—Protection against mechanical damage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Geometry (AREA)
  • Inverter Devices (AREA)

Abstract

The invention provides a power module packaging structure which comprises a substrate, a ceramic lining plate, a direct current power terminal and an alternating current power terminal. Wherein the ceramic backing plate is bonded to the substrate. The DC power terminal and the AC power terminal are bonded on the ceramic substrate. The number of the direct current power terminals is not less than two, parts which are relatively overlapped along the horizontal direction are arranged between the direct current power terminals, and gaps are arranged between the parts which are relatively overlapped along the horizontal direction on the direct current power terminals. According to the power module packaging structure provided by the invention, the whole inductance of the power module packaging can be effectively reduced through the parts which are arranged at intervals between the direct-current power terminals and overlapped in a large area along the horizontal direction.

Description

Power module packaging structure
Technical Field
The invention relates to the technical field of power semiconductor application, in particular to a power module packaging structure.
Background
The power semiconductor device products with high voltage, high current and high power density are widely applied to high-power conversion converters with power levels of hundreds of kilowatts to megawatts for rail transit, intelligent power grids, industrial application and the like. In order to meet the application requirement of continuously improving the power density, the current density of a power semiconductor chip is continuously improved by silicon-based IGBT chip and silicon carbide chip technologies, and along with the improvement of the current density and the power density, the traditional layout framework cannot meet the requirements of the chip on low inductance, low control loop inductance and the like inside a module package, the generation and the output of high-power electromagnetic interference inside the module are easily caused, and the performance of the power semiconductor chip can be fully exerted by a common traditional package structure. The high voltage and high current packaging technology widely used at present and adopting traditional packaging materials and processes such as welding type substrates, lining plates, chip bonding modes and the like needs to be updated to fully exert the performance of the power semiconductor chip. While improving the performance of the power semiconductor device, it is also necessary to improve the abnormal working condition resistance and long-term reliability of the semiconductor power module device in various application scenarios.
Disclosure of Invention
The technical problem to be solved by the invention is to overcome the defects of the prior art and provide a power module packaging structure, and the overall inductance of the power module packaging structure can be effectively reduced through the parts which are arranged at intervals between the direct current power terminals and are overlapped in a large area along the horizontal direction.
In order to solve the technical problems, the technical scheme provided by the invention is as follows:
a power module packaging structure comprises a substrate, a ceramic lining plate, a direct current power terminal and an alternating current power terminal. Wherein the ceramic backing plate is bonded to the substrate. The DC power terminal and the AC power terminal are bonded on the ceramic substrate. The number of the direct current power terminals is not less than two, parts which are relatively overlapped along the horizontal direction are arranged between the direct current power terminals, and gaps are arranged between the parts which are relatively overlapped along the horizontal direction on the direct current power terminals.
According to the power module packaging structure, the main loop parasitic inductance of the whole power packaging module is effectively reduced through the large-area overlapping structure between the direct-current power terminals, so that the generation and output of high-power electromagnetic interference in the module are effectively reduced. In actual operation, the current values and the distribution of the two direct current power terminals correspond to each other, the current directions are opposite, and the magnetic field distribution directions formed by the respective currents are opposite, so that the overall inductance of the power module can be greatly reduced, and the larger the overlapping structure area is, and the closer the distance between the two parts is, the stronger the magnetic field coupling is, and the lower the inductance is.
For the above technical solution, further improvements can be made as described below.
According to the power module packaging structure of the invention, in a preferred embodiment, at least two power chips are bonded on the ceramic substrate. The power chips are connected through a DLB structure, and the DLB structure is a copper bar.
DLB's copper bar structure can improve higher conducting capacity, lower return circuit inductance, and the copper bar structure has better heat dissipation function, can provide higher current capacity. Therefore, the rated current of the power module can be effectively improved, and a heat dissipation path of the upper surface of the power chip can be provided, so that the working junction temperature of the power chip can be effectively reduced, and the bonding reliability of the upper surface of the power chip can be improved.
Specifically, in a preferred embodiment, the DLB structure includes a portion bonded to the ceramic submount and a portion bonded to the power chip, and the portion bonded to the ceramic submount and the portion bonded to the power chip are connected to each other by a bridge connection structure.
The DLB structure with the structure form can ensure stable and reliable bonding with the ceramic lining plate and the power chip, and does not influence the working process of the power chip.
Further, in a preferred embodiment, the DLB structure is constructed as a symmetrical split structure, and the split structures are connected by short-circuit structures respectively connected with the bridge-shaped connecting structures.
The voltage can be balanced through the small current short circuit on the short circuit structure, the voltage difference of the DLB parallel structure is avoided, and therefore the current equalizing effect between the parallel power chips is effectively improved. The internal symmetrical structure of the packaging structure can flexibly carry out multi-module non-derating parallel connection to realize low-inductance packaging of various capacity configurations, so that the whole power module packaging structure can meet the requirements of quick switching of large-current silicon-based devices and silicon carbide devices.
Further, in a preferred embodiment, the power chips are symmetrically arranged on the ceramic backing plate.
The symmetrical layout of the power chips on the ceramic substrate is matched with the three-dimensional symmetrical DLB structure to improve the current grade and reduce the thermal resistance of the power module.
Further, in a preferred embodiment, the upper and lower metal surfaces of the ceramic backing plate, the outer surface of the substrate and the outer surface of the DLB structure are provided with a metal surface coating.
The reliability of the bonding process can be further improved by further arranging a metal surface coating suitable for welding and sintering on the surface of the bonding metal layer.
Further, in a preferred embodiment, the DLB structure further includes a bent structure for keeping the bonding portion with the power chip horizontal, facilitating soldering or ultrasonic bonding.
Specifically, in a preferred embodiment, the dc power terminal further includes a first bending structure and a first pin suitable for mounting the dc power terminal on the package, and a first connecting structure is disposed between the relatively overlapped portion of the dc power terminal and the first pin.
The direct current power terminal of this kind of structural style not only conveniently cooperates the tube installation to can provide suitable structural support and ensure that whole direct current power terminal's stable in structure is reliable practical for direct current power terminal and tube installation.
Further, in a preferred embodiment, the first pin is provided with a fork.
The larger pin is divided into two relatively small pins through the structure, the sum of the areas of the two forked pins can exceed that of a single large pin, and the high and low temperature impact and vibration resistance reliability can be easily realized through an ultrasonic bonding USW process or a welding process. The structure of the direct current power terminal can reduce the high-voltage high-power module of the traditional 25nH inductor with the same size to 10nH while improving the reliability of the power terminal, and relatively reduce the inductance value by 60 percent.
Specifically, in a preferred embodiment, the dc power terminal further includes a second bend structure that allows the first lead to remain horizontal, facilitating soldering or ultrasonic bonding.
Specifically, in a preferred embodiment, the ac power terminal includes a second bending structure suitable for mounting the ac power terminal on the package, a shock-absorbing bending structure, and a second pin, and a second connection structure is disposed between the second bending structure and the second pin thereof.
The alternating current power terminal with the structure is convenient to match with a tube shell for installation, a suitable structural support can be provided for installation of the direct current power terminal and the tube shell, the shock absorption bending structure can release stress in the bonding process of the alternating current power terminal and absorb shock under actual working conditions, the reliability of the alternating current power terminal is improved, the electric conduction and heat dissipation capacity of a main circuit is improved, and the temperature impact reliability is improved. And the alternating current power terminal with the structure form has lower parasitic resistance, so that the whole power module can support higher current limit.
Further, in a preferred embodiment, the second pin is provided with a fork.
The larger pin is divided into two relatively small pins through the structure, the sum of the areas of the two forked pins can exceed that of a single large pin, and the high and low temperature impact and vibration resistance reliability can be easily realized through an ultrasonic bonding USW process or a welding process. The structure of the direct current power terminal can reduce the high-voltage high-power module of the traditional 25nH inductor with the same size to 10nH while improving the reliability of the power terminal, and relatively reduce the inductance value by 60 percent.
Further, in a preferred embodiment, the power module package structure of the present invention further includes a PCB control board and an auxiliary connection structure. The auxiliary connection structure is used for fixing the PCB control panel between the ceramic lining plate and the tube shell.
Through adopting the built-in PCB control panel of module, reduce control circuit inductance to realize the novel connection structure of control panel to power chip through supplementary connection structure. And the PCB control board controls the Gate to be as short as possible from the control board, so that the on-off speed is increased, and the balance control of the upper and lower tube switches is realized.
Further, in a preferred embodiment, the auxiliary connection structure includes an auxiliary connection terminal and a damper spring terminal. Auxiliary connection terminal arranges on the PCB control panel and with the tube cooperation installation, damping spring terminal both ends are connected with ceramic welt and PCB control panel respectively.
The auxiliary connecting terminal with the structure can not only improve the reliability of the module control end, but also reliably prevent vibration.
Specifically, in a preferred embodiment, the damping spring terminal includes a connecting rod and a connecting ring at the bottom of the connecting rod, and a damping ring adjacent to the connecting ring. The connecting rod passes the PCB control panel and fixes with the tube, and the go-between is fixed on the ceramic welt.
The damping spring terminal with the structure can further ensure reliable connection with a PCB control board and release module bonding stress, thereby further improving the anti-vibration effect. The connecting rod stretches into the through hole on the PCB control board, is welded on the PCB control board through a welding process and is matched with the tube shell to form an interface for controlling the work of a power chip switch in the module by an external driving signal. The external driving signal controls and observes the working condition of the power chip through the electric signal of the spring terminal. The connecting ring is arranged on the metal layer on the upper surface of the module ceramic lining plate through a welding or ultrasonic bonding process, and the structure guarantee of reliability is provided for the welding or ultrasonic bonding process. The height and the diameter of the damping ring are controlled to ensure the damping effect.
Specifically, in a preferred embodiment, the PCB control board is an H-shaped structure.
The PCB control panel adopts a novel large H-shaped structure, and through the balanced design of upper and lower metal layers, the grid Gate for controlling the upper and lower switches and the parasitic inductance value of the Auxiliary Emitter auriliary Emitter are reduced and kept at the same value, so that balanced low-control loop inductance is formed, and the current switch of the module is ensured to be controlled to be balanced.
Specifically, in a preferred embodiment, the PCB control board is snap-fitted to the package.
In order to improve PCB control panel stability, set up the bayonet socket structure on the tube for PCB control panel edge is pinned by the tube bayonet socket when packing into the tube, further improves the anti-vibration ability of PCB control panel in the operation of module operating condition.
Specifically, in a preferred embodiment, the PCB control board includes an upper metal layer for realizing a control signal connection function, and four corners of the PCB control board are symmetrically provided with positions for welding control loop resistors, so that the switching speed of the whole power module can be optimized.
In particular, in a preferred embodiment, there are not less than two ceramic liners connected to each other by conductive connectors.
Through a plurality of ceramic welts, be convenient for arrange a plurality of power chips, adopt jumbo size area chip can improve the total area of device active area in the whole power module.
Compared with the prior art, the invention has the advantages that: (1) The module packaging integral inductance is reduced by large-area overlapping of the direct-current power terminals, the traditional single bonding pin is replaced by two smaller bonding pins, the conductivity and heat dissipation capacity of the main current pin are improved, and the reliability is improved by an ultrasonic bonding USW process; (2) The alternating current power terminal releases stress through a plurality of bends and replaces the traditional single bonding pin through a plurality of small bonding pins, so that the conductive and heat dissipation capacity of the main current is improved, and the temperature impact reliability is improved; (3) The novel three-dimensional DLB structure is used for finishing the bonding of the upper surface of the power chip, the bonding of the DLB structure can be realized through the processes of welding, copper sintering or silver sintering and the like, and the operation reliability of the module is improved; (4) By adopting the novel DLB structure, failure modes such as easy breakage of bonding line bonding points in the traditional power module which are easy to occur are solved; (5) The total area of the active area of a device in the whole module is increased by adopting a large-size area chip, and the chip layout and the symmetrical DLB structure are matched with each other to improve the current grade and reduce the thermal resistance of the power module; (6) The PCB control panel is adopted to control the Gate pole to be as short as possible from the control panel, the on-off speed is improved, and the balanced control of the upper and lower tube switches is realized; (7) The PCB control panel is bonded to the ceramic lining plate through the novel spring auxiliary terminal, and the PCB control panel and the tube shell adopt new structures such as bayonets and connection modes, so that the reliability of the control end of the power module is improved while the reliability is improved.
Drawings
The invention will be described in more detail hereinafter on the basis of embodiments and with reference to the accompanying drawings. Wherein:
fig. 1 schematically shows the overall structure of a power module package structure of an embodiment of the present invention;
fig. 2 schematically shows an internal structure of a power module package structure of an embodiment of the present invention;
FIG. 3 schematically shows one of the DLB structures of an embodiment of the present invention;
FIG. 4 schematically shows another DLB structure of an embodiment of the present invention;
fig. 5 schematically shows a direct current power terminal mounting structure of an embodiment of the invention;
fig. 6 schematically shows the overall structure of an ac power terminal of the embodiment of the present invention;
fig. 7 schematically shows a partially enlarged structure of a mounting structure of a PCB control board according to an embodiment of the present invention;
fig. 8 schematically shows a connection structure of a PCB control board and an auxiliary connection terminal according to an embodiment of the present invention;
fig. 9 schematically shows the overall structure of the damper spring terminal of the embodiment of the present invention.
In the drawings, like parts are provided with like reference numerals. The figures are not drawn to scale.
Detailed Description
The invention will be further explained in detail with reference to the figures and the embodiments without thereby limiting the scope of protection of the invention.
Fig. 1 schematically shows the overall structure of a power module package structure 10 of an embodiment of the present invention. Fig. 2 schematically shows the internal structure of the power module package structure 10 of the embodiment of the present invention. Fig. 3 schematically shows one of the DLB structures 6 of the embodiment of the present invention. Fig. 4 schematically shows another structure of the DLB structure 6 of the embodiment of the present invention. Fig. 5 schematically shows a dc power terminal 3 mounting structure of the embodiment of the present invention. Fig. 6 schematically shows the overall structure of the ac power terminal 4 of the embodiment of the present invention. Fig. 7 schematically shows a partially enlarged structure of a mounting structure of the PCB control board 7 according to an embodiment of the present invention. Fig. 8 schematically shows a connection structure of the PCB control board 7 and the auxiliary connection terminals 8 according to an embodiment of the present invention. Fig. 9 schematically shows the overall structure of the damper spring terminal 82 of the embodiment of the present invention.
As shown in fig. 1 and 5, a power module package structure 10 according to an embodiment of the present invention includes a substrate 1, a ceramic substrate 2, a dc power terminal 3, and an ac power terminal 4. Wherein, the ceramic lining plate 2 is bonded on the substrate 1 through welding and sintering processes. The dc power terminal 3 and the ac power terminal 4 are bonded to the ceramic substrate 2. The number of the direct current power terminals 3 is not less than two, the direct current power terminals 3 have parts 33 which are relatively overlapped along the horizontal direction, and gaps along the vertical direction are formed between the parts 31 which are relatively overlapped along the horizontal direction on the direct current power terminals 3.
Specifically, in the present embodiment, the ceramic backing plate 2 includes an upper metal layer 21, a lower metal layer, and an intermediate layer. The upper metal layer and the lower metal layer are made of copper material or aluminum material. The intermediate layer is made of a pressure-resistant ceramic layer comprising aluminum oxide (Al) 2 O 3 ) Aluminum nitride (AlN) and silicon nitride (Si) 3 N 4 ) A material. The substrate 1 may be made of a material having good thermal conductivity and thermal mechanical properties, such as copper, aluminum silicon carbide (AlSiC) or magnesium silicon carbide (MgSiC).
According to the power module packaging structure provided by the embodiment of the invention, the main loop parasitic inductance of the whole power packaging module is effectively reduced through the large-area overlapping structure between the direct-current power terminals, so that the generation and influence of high-power electromagnetic interference in the module are effectively reduced. In actual operation, the current values and the distribution of the two direct current power terminals correspond to each other, the current directions are opposite, and the magnetic field distribution directions formed by the respective currents are opposite, so that the overall inductance of the power module can be greatly reduced.
As shown in fig. 2, preferably, in the present embodiment, at least two power chips 5 are bonded on the ceramic backing plate 2 through a soldering and sintering process. The power chips 5 are connected through a DLB (direct electrode lead-out) structure 6, and the DLB structure 6 is a copper bar. DLB's copper bar structure can improve higher conducting capacity, lower return circuit inductance, and the copper bar structure has better heat dissipation function, can provide higher current capacity. Therefore, the rated current of the power module can be effectively improved, and a heat dissipation path of the upper surface of the power chip can be provided, so that the working junction temperature of the power chip can be effectively reduced, and the bonding reliability of the upper surface of the power chip can be improved. Specifically, in the present embodiment, the DLB structure 6 is bonded to the upper metal surface of the power chip 5 by a soldering or sintering process, and the thickness of the DLB structure is preferably 0.2 to 0.6mm. Specifically, in the present embodiment, the number of the ceramic backing plates 2 is not less than two, and the upper metal layer and the lower metal layer of the ceramic backing plates 2 are connected to each other by the conductive connecting member 9. Through a plurality of ceramic welts, be convenient for arrange a plurality of power chips, adopt jumbo size area chip can improve the total area of device active area in the whole power module. The conductive connecting piece 9 is formed by bonding copper binding wires or copper bars through an ultrasonic bonding USW process to form a reliable conductive path.
Specifically, as shown in fig. 3 and 4, in the present embodiment, the DLB structure 6 includes a portion 61 bonded to the ceramic backing 2 and a portion 62 bonded to the power chip 5, and the portion 61 bonded to the ceramic backing and the portion 62 bonded to the power chip are connected to each other by a bridge-shaped connecting structure 63. The DLB structure in the structural form can ensure stable and reliable bonding with the ceramic lining plate and the power chip without influencing the working process of the power chip, and the DLB structure is mainly used for bonding the upper surface of the power chip and connecting current with the metal layer on the upper surface of the ceramic lining plate, so that the bonding connection on the upper surface of the chip is separated from the ultrasonic bonding or welding of the busbar, and the advantage of the high-power low-inductance busbar is brought into full play. Further, in the present embodiment, as shown in fig. 4, the DLB structure 6 is configured as a symmetrical split structure, and the split structures are connected by short-circuit structures 64 respectively connected to the bridge-shaped connecting structures 63. The voltage can be balanced through the small current short circuit on the short circuit structure, the voltage difference of the parallel structure of the DLB is avoided, and therefore the parallel current equalizing effect between the power chips is effectively improved. The internal symmetrical structure of the packaging structure can flexibly carry out multi-module deratless parallel connection to realize low-inductance packaging of various capacity configurations, so that the whole power module packaging structure can meet the requirements of quick switching of large-current silicon-based devices and silicon carbide devices. Preferably, in the present embodiment, the DLB structure 6 further includes a bent structure 66 for keeping the bonding portion 62 with the power chip 5 horizontal, facilitating welding or ultrasonic bonding.
Specifically, in the present embodiment, the portion 61 bonded to the ceramic backing plate 2 and the portion 62 bonded to the power chip 5 in the DLB structure 6 are transitionally connected by the slope 65, so that the structural strength and reliability of the DLB structure can be effectively increased. The slope 65 is preferably 25 to 45 degrees. The size of the portion 62 bonded to the power chip 5 matches the conductive bit on the power chip 5.
Further, in the present embodiment, as shown in fig. 2, the power chips 5 are symmetrically arranged on the ceramic backing plate 2. The symmetrical layout of the power chips on the ceramic substrate is matched with the three-dimensional symmetrical DLB structure to improve the current grade and reduce the thermal resistance of the power module. Further, in a preferred embodiment, the upper and lower metal surfaces 21, 1 of the ceramic backing plate 2, the outer surface of the substrate 1 and the outer surface of the DLB structure 6 are provided with a metal surface coating. The thickness of the coating is preferably 2~5 microns. The reliability of the bonding process can be further improved by further arranging a metal surface coating suitable for welding and sintering on the surface of the bonding metal layer.
Specifically, in the present embodiment, as shown in fig. 1 and 5, the dc power terminal 3 includes a first bending structure 31 and a first pin 32 suitable for mounting the dc power terminal 3 on the package 101, and a first connecting structure 34 is disposed between a relatively overlapped portion 33 of the dc power terminal 3 and the first pin 32. The direct current power terminal of this kind of structural style not only conveniently cooperates the tube installation to can provide suitable structural support and ensure that whole direct current power terminal's stable in structure is reliable practical for direct current power terminal and tube installation. Further, in the present embodiment, a bifurcated opening 321 is provided on the first pin 32. The larger pin is divided into two relatively small pins through the structure, the sum of the areas of the two forked pins can exceed that of a single large pin, and the high and low temperature impact and vibration resistance reliability can be easily realized through an ultrasonic bonding USW process or a welding process. The structure of the direct current power terminal can reduce the high-voltage high-power module of the traditional 25nH inductor with the same size to 10nH while improving the reliability of the power terminal, and relatively reduce the inductance value by 60 percent. Further, at least two connection through holes 35 are provided on the dc power terminal 3, so that the power module provides a connection with an external main current interface. Preferably, in the present embodiment, the dc power terminal 3 further includes a second bending structure 36 for keeping the first lead 32 horizontal to facilitate welding or ultrasonic bonding.
As shown in fig. 1 and fig. 6, in particular, in the present embodiment, the ac power terminal 4 includes a second bending structure 41 suitable for mounting the ac power terminal 4 on the package 101, a shock absorbing bending structure 42 and a second pin 43, and a second connecting structure 44 is disposed between the second bending structure 41 and the second pin 43. The alternating current power terminal with the structure is convenient to match with a tube shell for installation, a suitable structural support can be provided for installation of the direct current power terminal and the tube shell, the shock absorption bending structure can release stress in the bonding process of the alternating current power terminal and absorb shock under actual working conditions, the reliability of the alternating current power terminal is improved, the electric conduction and heat dissipation capacity of a main circuit is improved, and the temperature impact reliability is improved. And the alternating current power terminal with the structure form has lower parasitic resistance, so that the whole power module can support higher current value. Further, in the present embodiment, a fork 431 is disposed on the second lead 43. The larger pin is divided into two relatively small pins through the structure, the sum of the areas of the two forked pins can exceed that of a single large pin, and the high and low temperature impact and vibration resistance reliability can be easily realized through an ultrasonic bonding USW process or a welding process. The structure of the direct current power terminal can reduce the high-voltage high-power module of the traditional 25nH inductor with the same size to 10nH while improving the reliability of the power terminal, and relatively reduce the inductance value by 60 percent. Further, at least three connection through holes 45 are provided on the ac power terminal 4, so that the power module provides an interface connection with an external main current.
As shown in fig. 7, the power module package structure 10 of the present embodiment further includes a PCB control board 7 and an auxiliary connection structure 8. The auxiliary connection structure 8 is used for fixing the PCB control board 7 between the ceramic lining board 2 and the tube shell. Through adopting the built-in PCB control panel of module, reduce control circuit inductance to realize the novel connection structure of control panel to power chip through supplementary connection structure. And the PCB control board controls the Gate to be as short as possible from the control board, so that the on-off speed is increased, and the balance control of the upper and lower tube switches is realized.
Specifically, as shown in fig. 7 and 8, in the present embodiment, the PCB control board 7 has an H-shaped structure. The PCB control panel adopts a novel large H-shaped structure, and through the balanced design of upper and lower metal layers, the grid Gate for controlling the upper and lower switches and the parasitic inductance value of the Auxiliary Emitter auriliary Emitter are reduced and kept at the same value, so that balanced low-control loop inductance is formed, and the current switch of the module is ensured to be controlled to be balanced. Preferably, in this embodiment, the PCB control board 7 is snap-fitted to the case. In order to improve the stability of the PCB control board, a bayonet structure is arranged on the tube shell 101, so that the edge of the PCB control board is locked by the bayonet of the tube shell 101 when the PCB control board is installed in the tube shell 101, and the vibration prevention capability of the PCB control board in the operation of the actual working condition of the module is further improved. Specifically, in the present embodiment, the PCB control board includes an upper metal layer 71 for realizing a control signal connection function, and the four corners of the PCB control board are symmetrically provided with positions 72 for welding control loop resistors, so that the switching speed of the whole power module can be optimized.
Further, as shown in fig. 7 and 8, in the present embodiment, the auxiliary connection structure 8 includes an auxiliary connection terminal 81 and a damper spring terminal 82. The auxiliary connecting terminal 81 is arranged on the PCB control board 7 and is installed in a matched mode with the tube shell, and two ends of the damping spring terminal 82 are connected with the ceramic lining board 2 and the PCB control board 7 respectively. The auxiliary connecting terminal with the structure can not only improve the reliability of the module control end, but also reliably prevent vibration.
As shown in fig. 9, in the present embodiment, in particular, the damping spring terminal 82 includes a connecting rod 821 and a connection ring 822 at the bottom of the connecting rod 821, and a damping ring 823 near the connection ring 822. The connecting rod 21 passes through the PCB control board 7 to be fixed with the tube shell, and the connecting ring 822 is fixed on the ceramic lining board 2. The damping spring terminal with the structure can further ensure reliable connection with a PCB control board and release module bonding stress, thereby further improving the anti-vibration effect. The connecting rod 822 extends into a through hole on the PCB control board 7 and is welded on the PCB control board 7 through a welding process, and is matched with the tube shell to form an interface for controlling the operation of the switch of the power chip inside the module by an external driving signal. The external driving signal controls and observes the working condition of the power chip through the electric signal of the damping spring terminal. The connecting ring 822 is mounted on the metal layer 21 on the upper surface of the module ceramic lining plate 2 through a welding or ultrasonic bonding process, so that a reliable structural guarantee is provided for the welding or ultrasonic bonding process. The vibration damping effect is ensured by controlling the height and diameter size of the vibration damping ring 823.
According to the embodiments, it can be seen that the power module packaging structure related by the present invention can reduce the overall inductance of the module package by overlapping the dc power terminals in a large area, and adopt two smaller bonding pins to replace the traditional single bonding pin, thereby improving the conductivity and heat dissipation of the main current pin, and improving the reliability by the ultrasonic bonding USW (ultrasonic bonding) process; the alternating current power terminal releases stress through a plurality of bends and replaces the traditional single bonding pin through a plurality of small bonding pins, so that the conductive and heat dissipation capacity of the main current is improved, and the temperature impact reliability is improved; the novel three-dimensional DLB structure is used for finishing the bonding of the upper surface of the power chip, the bonding of the DLB structure can be realized through the processes of welding, copper sintering or silver sintering and the like, and the operation reliability of the module is improved; by adopting the novel DLB structure, failure modes such as easy breakage of bonding line bonding points in the traditional power module which are easy to occur are solved; the total area of the active area of a device in the whole module is increased by adopting a large-size area chip, and the chip layout and the symmetrical DLB structure are matched with each other to improve the current grade and reduce the thermal resistance of the power module; the PCB control panel is adopted to control the Gate pole to be as short as possible from the control panel, the on-off speed is improved, and the balanced control of the upper and lower tube switches is realized; the PCB control panel is bonded to the ceramic lining plate through the novel spring auxiliary terminal, and the PCB control panel and the tube shell adopt new structures such as bayonets and connection modes, so that the reliability of the control end of the power module is improved while the reliability is improved.
While the invention has been described with reference to a preferred embodiment, various modifications may be made and equivalents may be substituted for elements thereof without departing from the scope of the invention. In particular, the technical features mentioned in the embodiments can be combined in any way as long as there is no structural conflict. It is intended that the invention not be limited to the particular embodiments disclosed, but that the invention will include all embodiments falling within the scope of the appended claims.

Claims (16)

1. A power module packaging structure is characterized by comprising a substrate, a ceramic lining plate, a direct current power terminal and an alternating current power terminal; wherein the content of the first and second substances,
the ceramic lining plate is bonded on the substrate;
the direct current power terminal and the alternating current power terminal are bonded on the ceramic lining plate;
the number of the direct current power terminals is not less than two, parts which are relatively overlapped along the horizontal direction are arranged between the direct current power terminals, and gaps are arranged between the parts which are relatively overlapped along the horizontal direction on the direct current power terminals;
at least two power chips are bonded on the ceramic lining plate; the power chips are connected through a DLB structure, and the DLB structure is a copper bar;
the DLB structure comprises a part bonded with the ceramic substrate and a part bonded with the power chip, and the part bonded with the ceramic substrate and the part bonded with the power chip are connected with each other through a bridge connection structure;
the DLB structure is a symmetrical split structure, and the split structures are connected through short-circuit structures respectively connected with the bridge-shaped connecting structure.
2. The power module package structure of claim 1, wherein the power chips are symmetrically arranged on the ceramic backing plate.
3. The power module package structure of claim 1 or 2, wherein the upper and lower metal surfaces of the ceramic backing plate, the outer surface of the substrate and the outer surface of the DLB structure are provided with a metal surface plating.
4. The power module package structure according to claim 1 or 2, wherein the DLB structure further comprises a bending structure that keeps the portion bonded to the power chip horizontal.
5. The power module package structure according to claim 1 or 2, wherein the dc power terminal further comprises a first bending structure and a first pin suitable for mounting the dc power terminal on the package, and a first connection structure is disposed between the relatively overlapped portion of the dc power terminal and the first pin.
6. The power module package structure of claim 5, wherein the first lead is provided with a fork.
7. The power module package structure of claim 5, wherein the DC power terminal further comprises a second bend structure that keeps the first pin horizontal.
8. The power module package structure according to claim 1 or 2, wherein the ac power terminal includes a second bending structure, a shock-absorbing bending structure and a second pin, and a second connection structure is disposed between the second bending structure and the second pin.
9. The power module package structure of claim 8, wherein the second lead is provided with a fork.
10. The power module package structure of claim 1 or 2, further comprising a PCB control board and an auxiliary connection structure; the auxiliary connecting structure is used for fixing the PCB control panel between the ceramic lining plate and the pipe shell.
11. The power module package structure of claim 10, wherein the auxiliary connection structure comprises an auxiliary connection terminal and a damper spring terminal; the auxiliary connecting terminals are arranged on the PCB control board and are installed in a matched mode with the tube shell, and two ends of each damping spring terminal are connected with the ceramic lining board and the PCB control board respectively.
12. The power module package of claim 11, wherein the damping spring terminal includes a connection rod and a connection ring at a bottom of the connection rod, and a damping ring adjacent to the connection ring; the connecting rod passes through the PCB control panel and is fixed with the tube shell, and the go-between is fixed on the ceramic lining board.
13. The power module package structure of claim 10, wherein the PCB control board is an H-shaped structure.
14. The power module package assembly of claim 10, wherein the PCB control board is snap-fit to the package.
15. The power module package structure of claim 10, wherein the PCB control board has positions for soldering the control loop resistors symmetrically at four corners, and the PCB control board comprises an upper metal layer for connecting with the control signals.
16. The power module package structure according to claim 1 or 2, wherein there are not less than two ceramic substrates, and the ceramic substrates are connected to each other by conductive connecting members.
CN202010668595.3A 2020-07-13 2020-07-13 Power module packaging structure Active CN111916422B (en)

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JP6382097B2 (en) * 2014-12-24 2018-08-29 株式会社 日立パワーデバイス Semiconductor power module and power converter using the same
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