CN111826719A - Method and device for controlling local temperature gradient of large-mass crystal growth - Google Patents
Method and device for controlling local temperature gradient of large-mass crystal growth Download PDFInfo
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- CN111826719A CN111826719A CN202010724074.5A CN202010724074A CN111826719A CN 111826719 A CN111826719 A CN 111826719A CN 202010724074 A CN202010724074 A CN 202010724074A CN 111826719 A CN111826719 A CN 111826719A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/006—Controlling or regulating
Abstract
The invention discloses a control method of a local temperature gradient for large-mass crystal growth, which is characterized by comprising the following steps of: step one, installing a crystal growth furnace, and carrying out heating, material melting, temperature adjustment and seed melting treatment; step two, adjusting the temperature of each temperature zone of the crystal growth furnace after the seeds are melted in the step one, and gradually reducing the shoulder temperature to finish the shouldering process of the crystal; keeping the support tube and the quartz tube of the crystal growth furnace still, moving the transmission device of the crystal growth furnace upwards to drive the furnace body to move, moving the crystal growth interface upwards, and realizing the growth of the crystal; step four: the furnace body moves and simultaneously gradually descends the furnace core of the crystal growth furnace, so that the furnace core of the crystal growth furnace and the supporting tube move relatively; or adjusting the fluid material and the fluid speed in the heat dissipation channel, changing the heat taken away by the heat dissipation channel, and controlling the temperature gradient. The temperature gradient in the crystal growth process is adjusted in a targeted manner by adjusting the heat-insulating material and the relative position in the growth process.
Description
Technical Field
The invention relates to the technical field of semiconductor material preparation, in particular to a method and a device for controlling a local temperature gradient of large-mass crystal growth.
Background
Gallium arsenide (GaAs) material is the most important material in the second generation of new compound semiconductors following silicon single crystal. The material has excellent performance, high electron mobility and high photoelectric conversion efficiency, is widely applied in the fields of microelectronics and photoelectrons, and particularly plays a role of no substitution in the 5G commercial process. Semi-insulating high-resistance GaAs (rho is more than 108 omega-cm) polished wafers and epitaxial wafer substrates are main substrate materials of radio frequency PA devices. Semi-insulating high-resistance gallium arsenide (GaAs) has main parameters of resistivity and mobility, and the carbon concentration in the crystal has great influence on the resistivity and the mobility.
The heaters of the existing vertical gradient freezing method (VGF) or vertical British Raman (VB) crystal growth furnaces are all arranged by adopting one or more groups of cylindrical peripheries, and the adjustment of the growth temperature of a melt and a crystal is realized by adjusting a heat insulation material and a structure. Finally achieving the purpose of controlling the crystal growth. However, because the heat-insulating property of the heat-insulating material is always in a basically constant state in the crystal growth process, the temperature gradient field of the crystal can be adjusted only by the heaters arranged on the periphery of the cylinder in the whole crystal growth process, so that the aim of adjusting the temperature field is fulfilled.
By only adjusting the 6 groups of heaters on the periphery of the cylinder, the large adjustment and the accurate control of the temperature gradient of the central part of the thermal field in the crystal growing process are difficult to realize, so that the crystal growth interface can not be effectively adjusted, and the concave interface is continuously deepened in the later stage of crystal growth, so that the materials of high-quality large-size semi-insulating gallium arsenide/indium phosphide and the like with 6 inches or more are difficult to obtain long large-diameter crystals.
The gallium arsenide/indium phosphide crystal growth process is a dynamic process in which the thermal insulation structure of the temperature field changes continuously due to the heat conduction characteristic of the gallium arsenide crystal material. The thermal conductivity of newly grown crystalline gallium arsenide is very low, only 0.48W/cm/DEG C. The grown crystal becomes a new added heat insulation material to prevent heat loss from the center, and further, the concave degree of the concave interface is increased continuously along with the continuous growth of the crystal, so that the polycrystalline phenomenon starts to appear from the edge of the crystal. The crystal with large diameter is difficult to grow, the length is only about 100mm, and the production efficiency is low.
In view of this, it is an urgent technical problem to avoid the phenomena of polycrystallization and the increase of the occurrence/extent of dishing at the crystal growth interface.
Disclosure of Invention
In order to solve the technical problem, the invention discloses a control method of a local temperature gradient for large-mass crystal growth, which is characterized by comprising the following steps of:
step one, installing a crystal growth furnace, and carrying out heating, material melting, temperature adjustment and seed melting treatment;
step two, adjusting the temperature of each temperature zone of the crystal growth furnace after the seeds are melted in the step one, and gradually reducing the shoulder temperature to finish the shouldering process of the crystal;
keeping the support tube and the quartz tube of the crystal growth furnace still, and moving the transmission device of the crystal growth furnace upwards to drive the furnace body to move so as to move the crystal growth interface upwards;
step four: the furnace body rises and simultaneously gradually descends the furnace core of the crystal growth furnace, so that the furnace core of the crystal growth furnace and the supporting pipe move relatively.
Further, in the fourth step, the descending speed of the furnace core is 1-10 mm/h.
The invention also discloses a control method of the local temperature gradient of the growth of the large-mass gallium arsenide crystal, which is characterized by comprising the following steps:
step one, installing a crystal growth furnace, and carrying out heating, material melting, temperature adjustment and seed melting treatment;
step two, adjusting the temperature of each temperature zone of the crystal growth furnace after the seeds are melted in the step one, and gradually reducing the shoulder temperature to finish the shouldering process of the crystal;
keeping the support tube and the quartz tube of the crystal growth furnace still, and moving the transmission device of the crystal growth furnace upwards to drive the furnace body to move so as to move the crystal growth interface upwards;
step four: the furnace body rises and simultaneously adjusts the fluid material and the fluid speed in the heat dissipation channel, changes the heat taken away by the heat dissipation channel and controls the temperature gradient.
Further, in the fourth step, the fluid material is any one of water, nitrogen and argon.
Further, in the fourth step, the fluid speed is 1-50 l/min.
Further, in the second step, each temperature zone of the crystal growth furnace comprises a first temperature zone, a second temperature zone, a third temperature zone, a fourth temperature zone, a fifth temperature zone and a sixth temperature zone;
the temperature adjustment of each temperature zone of the crystal growth furnace specifically comprises the reduction of the temperature of the first temperature zone and the second temperature zone, and the temperature of the third temperature zone, the fourth temperature zone, the fifth temperature zone and the sixth temperature zone is unchanged.
The invention also discloses a control device of the local temperature gradient of the growth of the large-mass crystal, which comprises the following components: a support structure;
the furnace body structure is fixedly connected to the top of the supporting structure;
the crucible assembly is arranged at the top of the furnace body structure; and
and the transmission structure is fixedly connected with the furnace body structure and drives the furnace body structure to move up and down.
The invention also discloses a control device of the local temperature gradient of the growth of the large-mass crystal, which comprises the following components: a support structure;
the furnace body structure is fixedly connected to the top of the supporting structure;
the crucible assembly is arranged at the top of the furnace body structure;
the transmission structure is fixedly connected with the furnace body structure and drives the furnace body structure to move up and down; and
a cooling structure for enhancing heat dissipation from the core location.
Further, the cooling structure is arranged between the furnace body structure and the crucible assembly and comprises
The heat-insulating sleeve is sleeved at the bottom of the quartz tube; and
the first cooling pipeline is annularly arranged on the outer wall of the heat-insulating sleeve.
Further, the cooling structure comprises a second cooling pipeline (53), and the second cooling pipeline (53) is embedded in the furnace core.
The invention also discloses a control method of the local temperature gradient of the growth of the large-mass crystal, which can also be applied to gallium arsenide, indium phosphide and cadmium telluride crystals grown by using the VGF/VB crystal growth method.
Has the advantages that:
the temperature gradient in the crystal growth process is adjusted in a targeted manner by adjusting the heat-insulating material and the relative position in the growth process;
the problem that different requirements are provided for the gradient of the thermal field at the same position at different stages in the growth process of the large-size gallium arsenide crystal is solved;
the problem of unstable interface in the existing gallium arsenide crystal growth process is solved. In the process of growing the gallium arsenide crystal, because the heat conductivity of the gallium arsenide which grows into the crystal is small, the heat preservation performance of the center of the bottom is gradually enhanced due to a part of the grown gallium arsenide grown-up heat preservation material. The increase in the thermal insulating properties of the core will result in a decrease in the thermal conductivity of the core, which in turn results in an initial dishing of the interface, and ultimately an interfacial instability. The problems of long and short crystal material with large size, uneven crystal performance and the like are caused;
the length of the 6-inch semi-insulating gallium arsenide crystal is from 60mm to 220mm, and meanwhile, the tail polycrystalline probability is reduced from 35% to 10%; the length of the 4-inch semi-insulating gallium arsenide crystal is from 70mm to 220mm, and meanwhile, the tail polycrystalline probability is reduced from 35% to 10%. The EPD distribution uniformity becomes significantly better. EPD average value is 700/cm2Reduced to 30/cm2。
Drawings
FIG. 1 is a schematic flow diagram of a method for controlling the local temperature gradient of large mass crystal growth in accordance with the present invention;
FIG. 2 is a schematic view of a control apparatus for local temperature gradient of large mass crystal growth according to the present invention;
FIG. 3 is a second schematic diagram of the apparatus for controlling the local temperature gradient for large mass crystal growth according to the present invention;
FIG. 4 is a schematic view of a first cooling configuration of the local temperature gradient for large mass crystal growth of the present invention;
FIG. 5 is a schematic view of the core descent of the local temperature gradient for large mass crystal growth of the present invention;
FIG. 6 is a schematic structural view of a local temperature gradient furnace core containing a second cooling structure for large mass crystal growth according to the present invention.
Legend: 1. a support structure; 2. a furnace body structure; 21. a furnace core; 22. a glass rod; 23. supporting a tube; 24. a heat preservation outer sleeve; 25. a heater assembly; 251. a first temperature zone; 252. a second temperature zone; 253. a third temperature zone; 254. a fourth temperature zone; 255. a fifth temperature zone; 256. a sixth temperature zone; 3. a crucible assembly; 31. a quartz tube; 32. a quartz cap; a PBN crucible; 4. a transmission structure; 5. a cooling structure; 51. a thermal insulation sleeve; 52. a first cooling duct; 53. a second cooling conduit; 6. a track structure.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein, but rather should be construed as broadly as the present invention is capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
Example 1
As shown in FIG. 1, the invention discloses a control method of local temperature gradient of large-mass crystal growth, which comprises the following steps:
step one, the crystal growing furnace is installed according to the single crystal operation flow, and then the heating, material melting, temperature adjustment and seed melting treatment are carried out;
adjusting the temperature of each temperature zone of the crystal growth furnace after the seeds are melted in the step one, wherein each temperature zone of the crystal growth furnace comprises a first temperature zone, a second temperature zone, a third temperature zone, a fourth temperature zone, a fifth temperature zone and a sixth temperature zone, and the temperature is adjusted by reducing the temperature of the first temperature zone and the temperature of the second temperature zone, and keeping the temperature of the third temperature zone, the temperature of the fourth temperature zone, the temperature of the fifth temperature zone and the temperature of the sixth temperature zone unchanged, so that the shoulder temperature is gradually reduced, and the shouldering process of the crystal is completed;
step three, keeping the supporting tube and the quartz tube of the crystal growth furnace still, realizing the gradual rise of the furnace body through a furnace body transmission device, and realizing the growth of crystals by the upward movement of a crystal growth interface along with the furnace body;
step four: the furnace body rises and simultaneously gradually descends the furnace core of the crystal growth furnace, so that the furnace core of the crystal growth furnace and the supporting pipe move relatively, the descending speed is 1-10 mm/h, and the total descending distance is 150-200 mm.
As shown in FIG. 2, the invention discloses a control device for local temperature gradient of large-mass crystal growth, which comprises a supporting structure 1, a furnace body structure 2, a crucible assembly 3, a transmission structure 4 and a track structure 6.
The furnace body structure 2 is fixedly connected to the top of the supporting structure 1 and comprises a furnace core 21, a glass rod 22, a supporting pipe 23, a heat-insulating jacket 24 and a heater assembly 25.
The furnace core 21 is fixedly connected with the supporting structure 1.
A glass rod 22 is located inside the core 21 and is in communication with the support structure 1.
The supporting tube 23 is sleeved on the furnace core 21.
The heat-insulating jacket 24 is sleeved on the support pipe 23.
The heater assembly 25 is embedded on the inner wall of the heat-insulating jacket 24.
The crucible assembly 3 is installed on top of the furnace body structure 2 and includes a quartz tube 31, a quartz cap 32 and a PBN crucible 33.
The quartz tube 31 is inserted into the top of the furnace core 21.
The quartz cap 32 is snapped on top of the quartz tube 31.
A PBN crucible 33 is located within the quartz tube 31.
The transmission structure 4 is fixedly connected with the furnace body structure 2 and drives the furnace body structure 2 to move up and down.
In the embodiment, the length of the 6-inch semi-insulating gallium arsenide crystal is from 60mm to 220mm, and meanwhile, the tail polycrystalline probability is reduced from 35% to 10%.
As shown in fig. 5, after the crystal shouldering is completed, the furnace core descends to cause more and more furnace cores to enter a low-temperature environment, and the heat loss from the furnace core part is gradually enhanced. The temperature gradient of the central part of the crystal after growth is gradually increased, and the bottom heat preservation enhancement caused by the crystal growth is compensated. Finally, the growth interface is maintained to be slightly convex or concave in the crystal growth process, and the phenomena of polycrystal and the like caused by serious concave surface of the crystal growth interface are avoided.
Example 2
As shown in FIG. 1, the invention discloses a control method of local temperature gradient of large-mass crystal growth, which comprises the following steps:
step one, the crystal growing furnace is installed according to the single crystal operation flow, and then the heating, material melting, temperature adjustment and seed melting treatment are carried out;
adjusting the temperature of each temperature zone of the crystal growth furnace after the seeds are melted in the step one, wherein each temperature zone of the crystal growth furnace comprises a first temperature zone, a second temperature zone, a third temperature zone, a fourth temperature zone, a fifth temperature zone and a sixth temperature zone, and the temperature is adjusted by reducing the temperature of the first temperature zone and the temperature of the second temperature zone, and keeping the temperature of the third temperature zone, the temperature of the fourth temperature zone, the temperature of the fifth temperature zone and the temperature of the sixth temperature zone unchanged, so that the shoulder temperature is gradually reduced, and the shouldering process of the crystal is completed;
step three, keeping the supporting tube and the quartz tube of the crystal growth furnace still, realizing the gradual rise of the furnace body through a furnace body transmission device, and realizing the growth of crystals by the upward movement of a crystal growth interface along with the furnace body;
step four: the furnace body rises and simultaneously gradually enhances the radiating mode to adjust the fluid material and the fluid speed in the radiating channel, changes the heat taken away by the radiating channel and achieves the aim of controlling the temperature gradient.
The fluid material in the present invention is any one of water, nitrogen and argon.
The fluid velocity in the present invention is 1 to 50l/mi n.
As shown in FIG. 3, the invention discloses a control device for local temperature gradient of large-mass crystal growth, which comprises a supporting structure 1, a furnace body structure 2, a crucible assembly 3, a transmission structure 4, a cooling structure 5 and a track structure 6.
The furnace body structure 2 is fixedly connected to the top of the supporting structure 1 and comprises a furnace core 21, a glass rod 22, a supporting pipe 23, a heat-insulating jacket 24 and a heater assembly 25.
The furnace core 21 is fixedly connected with the supporting structure 1.
A glass rod 22 is located inside the core 21 and is in communication with the support structure 1.
The supporting tube 23 is sleeved on the furnace core 21.
The heat-insulating jacket 24 is sleeved on the support pipe 23.
The heater assembly 25 is embedded on the inner wall of the heat-insulating jacket 24.
The crucible assembly 3 is installed on top of the furnace body structure 2 and includes a quartz tube 31, a quartz cap 32 and a PBN crucible 33.
The quartz tube 31 is inserted into the top of the furnace core 21.
The quartz cap 32 is snapped on top of the quartz tube 31.
A PBN crucible 33 is located within the quartz tube 31.
The transmission structure 4 is fixedly connected with the furnace body structure 2 and drives the furnace body structure 2 to move up and down.
A cooling structure 5, wherein the cooling structure 5 is used for enhancing the heat dissipation capacity of the position of the furnace core 21.
As shown in fig. 4, the cooling structure 5 is located between the furnace body structure 2 and the crucible assembly 3, and comprises a thermal insulation sleeve 51 and a first cooling pipeline 52, wherein the thermal insulation sleeve 51 is sleeved at the bottom of the quartz tube 31; the first cooling duct 52 is provided around the outer wall of the thermal jacket 51.
As shown in fig. 6, the cooling structure 5 includes a second cooling duct 53, and the second cooling duct 53 is fitted in the core 21.
In the embodiment, the length of the 4-inch semi-insulating gallium arsenide crystal is from 70mm to 220mm, and meanwhile, the tail polycrystalline probability is reduced from 35% to 10%. The EPD distribution uniformity becomes significantly better. EPD average value is 700/cm2Reduced to 30/cm2。
After the crystal shouldering is finished, the furnace body gradually moves upwards to drive the growth interface to gradually move upwards, and the gradual growth of the crystal is realized. The temperature of the central part of the grown crystal is reduced by gradually strengthening the heat dissipation of the furnace core part, the gradient inside the crystal is gradually increased, and the gradient change caused by the heat preservation of the crystal is compensated. Finally, the growth interface is maintained to be slightly convex or concave in the crystal growth process, and the phenomena of polycrystal and the like caused by serious concave surface of the crystal growth interface are avoided.
The furnace core 21, the supporting tube 23 and the heat-insulating jacket 24 are relatively independent and do not influence each other during movement.
In the invention, the control method of the local temperature gradient of the large-mass crystal growth can also be applied to gallium arsenide, indium phosphide and cadmium telluride crystals grown by using the VGF/VB crystal growth method.
Comparative example 1
The difference from the embodiment 1 is that the furnace core does not drop, and the tail polycrystalline phenomenon appears after the 6-inch crystal can only grow to 60-100 mm.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (11)
1. A method for controlling the local temperature gradient of the growth of a large-mass crystal is characterized by comprising the following steps:
step one, installing a crystal growth furnace, and carrying out heating, material melting, temperature adjustment and seed melting treatment;
step two, adjusting the temperature of each temperature zone of the crystal growth furnace after the seeds are melted in the step one, and gradually reducing the shoulder temperature to finish the shouldering process of the crystal;
keeping the support tube and the quartz tube of the crystal growth furnace still, and moving the transmission device of the crystal growth furnace upwards to drive the furnace body to move so as to move the crystal growth interface upwards;
step four: the furnace body rises and simultaneously gradually descends the furnace core of the crystal growth furnace, so that the furnace core of the crystal growth furnace and the supporting pipe move relatively.
2. The method for controlling the local temperature gradient of the growth of the large-mass crystal according to claim 1, wherein in the fourth step, the descending speed of the furnace core is 1-10 mm/h.
3. A method for controlling the local temperature gradient of the growth of a large-mass crystal is characterized by comprising the following steps:
step one, installing a crystal growth furnace, and carrying out heating, material melting, temperature adjustment and seed melting treatment;
step two, adjusting the temperature of each temperature zone of the crystal growth furnace after the seeds are melted in the step one, and gradually reducing the shoulder temperature to finish the shouldering process of the crystal;
keeping the support tube and the quartz tube of the crystal growth furnace still, and moving the transmission device of the crystal growth furnace upwards to drive the furnace body to move so as to move the crystal growth interface upwards;
step four: the furnace body rises and simultaneously adjusts the fluid material and the fluid speed in the heat dissipation channel, changes the heat taken away by the heat dissipation channel and controls the temperature gradient.
4. The method of claim 3, wherein in the fourth step, the fluid material is any one of water, nitrogen and argon.
5. The method for controlling the local temperature gradient of large mass crystal growth according to claim 4, wherein in the fourth step, the fluid velocity is 1-50 l/min.
6. The method for controlling the local temperature gradient of the growth of the large-mass crystal according to claim 1 or 3, wherein in the second step, each temperature zone of the crystal growth furnace comprises a first temperature zone, a second temperature zone, a third temperature zone, a fourth temperature zone, a fifth temperature zone and a sixth temperature zone;
the temperature adjustment of each temperature zone of the crystal growth furnace specifically comprises the reduction of the temperature of the first temperature zone and the second temperature zone, and the temperature of the third temperature zone, the fourth temperature zone, the fifth temperature zone and the sixth temperature zone is unchanged.
7. Apparatus for controlling the local temperature gradient of a large mass crystal growth according to any one of claims 1, 2, 6, comprising: a support structure (1);
the furnace body structure (2), the furnace body structure (2) is fixedly connected to the top of the supporting structure (1);
the crucible assembly (3), the crucible assembly (3) is arranged at the top of the furnace body structure (2); and
the transmission structure (4) is fixedly connected with the furnace body structure (2) and drives the furnace body structure (2) to move up and down.
8. Apparatus for controlling the local temperature gradient of a large mass crystal growth according to any one of claims 3 to 6, comprising: a support structure (1);
the furnace body structure (2), the furnace body structure (2) is fixedly connected to the top of the supporting structure (1);
the crucible assembly (3), the crucible assembly (3) is arranged at the top of the furnace body structure (2);
the transmission structure (4) is fixedly connected with the furnace body structure (2) and drives the furnace body structure (2) to move up and down; and
a cooling structure (5), the cooling structure (5) is used for enhancing the heat dissipation capacity of the position of the furnace core (21).
9. The apparatus for controlling the local temperature gradient for large mass crystal growth as set forth in claim 8, wherein the cooling structure (5) is located between the furnace structure (2) and the crucible assembly (3), comprising
The heat-insulating sleeve (51), the said heat-insulating sleeve (51) is fitted on the bottom of the quartz tube (31); and
a first cooling pipe (52), wherein the first cooling pipe (52) is arranged on the outer wall of the heat insulation sleeve (51) in a surrounding mode.
10. The device for controlling the local temperature gradient for large mass crystal growth according to claim 8, characterized in that the cooling structure (5) comprises a second cooling duct (53), the second cooling duct (53) being embedded in the furnace core (21).
11. A control method of local temperature gradient of large-mass crystal growth can be applied to gallium arsenide, indium phosphide and cadmium telluride crystals grown by using a VGF/VB crystal growth method.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090249994A1 (en) * | 2008-04-07 | 2009-10-08 | Axt Technology, Inc. | Crystal growth apparatus and method |
| CN109252220A (en) * | 2018-12-04 | 2019-01-22 | 中国电子科技集团公司第四十六研究所 | A kind of VGF/VB arsenide gallium monocrystal furnace structure and growing method |
| CN110484968A (en) * | 2019-09-30 | 2019-11-22 | 山西中科晶电信息材料有限公司 | A kind of crystal growing furnace being provided with furnace body elevating mechanism |
-
2020
- 2020-07-24 CN CN202010724074.5A patent/CN111826719B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090249994A1 (en) * | 2008-04-07 | 2009-10-08 | Axt Technology, Inc. | Crystal growth apparatus and method |
| CN109252220A (en) * | 2018-12-04 | 2019-01-22 | 中国电子科技集团公司第四十六研究所 | A kind of VGF/VB arsenide gallium monocrystal furnace structure and growing method |
| CN110484968A (en) * | 2019-09-30 | 2019-11-22 | 山西中科晶电信息材料有限公司 | A kind of crystal growing furnace being provided with furnace body elevating mechanism |
Non-Patent Citations (1)
| Title |
|---|
| 《材料科学技术百科全书》编委会: "《材料科学技术百科全书》", 31 August 1995 * |
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