CN111800111B - Method and system for rapidly switching photomultiplier of micro-light detector - Google Patents
Method and system for rapidly switching photomultiplier of micro-light detector Download PDFInfo
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- CN111800111B CN111800111B CN201911346439.9A CN201911346439A CN111800111B CN 111800111 B CN111800111 B CN 111800111B CN 201911346439 A CN201911346439 A CN 201911346439A CN 111800111 B CN111800111 B CN 111800111B
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- 238000003996 delayed luminescence Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
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Abstract
The invention discloses a method and a system for rapidly switching a photomultiplier of a micro-light detector, wherein the method comprises the following steps: adding a gate control circuit to the voltage dividing circuit of the micro-light detector; when the laser is turned off, a pulse low-level signal is input into the input end of the gating circuit, potential difference is formed among a first multiplication stage, a second multiplication stage and a third multiplication stage of the voltage dividing circuit through a high-voltage power supply of the micro-light detector, and a photomultiplier PMT is turned on; when the laser is started, a pulse high-level signal is input into the input end of the gating circuit, the power supply of the high-voltage power supply of the micro-light detector is cut off, the potential difference formed among the first multiplication stage, the second multiplication stage and the third multiplication stage of the voltage dividing circuit is 0, and the PMT is closed.
Description
Technical Field
The invention relates to the technical field of low-light detection, in particular to a method and a system for rapidly switching a photomultiplier of a low-light detector.
Background
In the tests such as a laser spectrum test, a fluorescence test, a raman spectroscopy, a biological DL test, and a boltzmann electron temperature test, a signal to be tested is very weak, and thus a photomultiplier tube with high sensitivity is generally used as a detection means. However, the intensity of light as an excitation source tends to be very strong, easily resulting in saturation of the photomultiplier anode output current and even irreversible damage. This requires that the photomultiplier be shut down during excitation to avoid damage; and when the signal light needs to be detected, the photomultiplier is started to detect.
The peripheral circuit of the photomultiplier consists of a high-voltage power supply, a voltage dividing circuit, an amplifying and discriminating circuit and a shaping circuit. The high-voltage power supply and the voltage dividing circuit are used for providing potential differences for all dynodes of the photomultiplier, so that the photomultiplier can work normally.
PMT: is known as PhotoMultiplier Tube, a photomultiplier. It is a vacuum electronic device capable of converting weak light signals into electric signals. And the detector converts incident photons into photoelectric signals by utilizing an external photoelectric effect. The photomultiplier consists of an incident window, a photocathode surface, a multiplication system, an anode and the like. The photocathode surface emits electrons into vacuum under the excitation of photons (external photoelectric effect), and under the action of an electric field, the electrons are collected to the first dynode through the focusing electrode, and the electrons subjected to impact multiplication can release more electrons. Then sequentially passes through each dynode in turn to carry out secondary electron multiplication. Finally, secondary electrons emitted by the final dynode are output through the anode.
DL: is known as Delay Luminescence, i.e. delayed luminescence. The living body is subjected to external excitation, for example, excitation by a laser beam. After re-excitation, the living beings will also emit photons in this broad spectrum and gradually decay. And the energy distribution is uniform in the spectral range of 400-800 nm. This excitation is followed by a longer photon emission (in the order of ms to s) called delayed luminescence.
In the prior art, the gating modes for controlling the photomultiplier generally have two modes:
1) Controlling high voltage power supply
Positive or negative high voltages of 1-3KV are typically required when using photomultiplier tubes, typically provided by high voltage power supply modules. The purpose of controlling the high voltage can be achieved by controlling the power supply of the high voltage power supply module. The effect of directly closing the photomultiplier can be achieved by controlling the high-voltage power supply, but the delay response of the switch is slow, and the requirement of quick use cannot be met. Taking the example of Beijing Binsonn CC228P-01, the switch delay response is 250Ms (MAX). However, the existing method has excessively long response time, and is difficult to meet the demands.
2) Using optical switches
When the test is not needed, the optical switch is used to intercept the transmission of the optical path. This method can naturally prevent strong light from damaging the photocathode surface, but is expensive.
Therefore, a technique is needed to implement a method for rapidly switching a photomultiplier tube of a photodetector.
Disclosure of Invention
The technical scheme of the invention provides a method and a system for rapidly switching a photomultiplier of a micro-light detector, which are used for solving the problem of how to rapidly switch the photomultiplier of the micro-light detector.
In order to solve the above problems, the present invention provides a method for rapidly switching a photomultiplier of a photodetector, the method comprising:
adding a gate control circuit to the voltage dividing circuit of the micro-light detector;
when the laser is turned off, a pulse low-level signal is input into the input end of the gating circuit, potential difference is formed among a first multiplication stage, a second multiplication stage and a third multiplication stage of the voltage dividing circuit through a high-voltage power supply of the micro-light detector, and a photomultiplier PMT is turned on;
when the laser is started, a pulse high-level signal is input into the input end of the gating circuit, the power supply of the high-voltage power supply of the micro-light detector is cut off, the potential difference formed among the first multiplication stage, the second multiplication stage and the third multiplication stage of the voltage dividing circuit is 0, and the PMT is closed.
Preferably, when the laser is turned off, a pulse low level signal is input to the input end of the gate control circuit, a potential difference is formed among the first multiplication stage, the second multiplication stage and the third multiplication stage, and the photomultiplier PMT is turned on, and the method further comprises:
when the laser is turned off, a pulse low-level signal is input into the input end C of the gating circuit, the fast response triode Q1 of the gating circuit is turned off, potential difference is formed between the photo cathode surface P and the first multiplier stage, the second multiplier stage and the third multiplier stage, and the photomultiplier PMT is turned on.
Preferably, when the laser is turned on, by inputting a pulse high level signal to the input end of the gate control circuit, a potential difference of 0 is formed among the first multiplication stage, the second multiplication stage and the third multiplication stage, and the photomultiplier PMT is turned off, and the method further comprises:
when the laser is started, a pulse high-level signal is input into the input end of the gating circuit, the fast response triode Q1 of the gating circuit is conducted, and a potential difference of 0 is formed between the photocathode surface P and the first multiplication stage, between the photocathode surface P and the photocathode surface of the gating circuit and between the photocathode surface of the gating circuit and the photocathode surface of the gating circuit, and between the photocathode surface of the photocathode and the photocathode surface of the gating circuit and the photocathode surface of the photocell form potential difference between the photocell surface of the photocell and the photocell surface of the photocell through the first multiplication stage and the photocell.
Preferably, the voltage dividing circuit of the micro-light detector is added with a gate control circuit, which comprises:
and adding a gate control circuit by leading out pins of the voltage dividing circuit.
Preferably, the pulse low level signal is a TTL pulse low level signal.
In accordance with another aspect of the present invention, there is provided a system for rapidly switching a photomultiplier of a photodetector, the system comprising:
the initial unit is used for adding a gate control circuit to the voltage dividing circuit of the micro-light detector;
the starting unit is used for inputting a pulse low-level signal into the input end of the gating circuit when the laser is closed, forming potential difference among a first multiplication stage, a second multiplication stage and a third multiplication stage of the voltage division circuit through a high-voltage power supply of the micro-light detector, and starting a photomultiplier PMT;
and the closing unit is used for inputting a pulse high-level signal into the input end of the gating circuit when the laser is started, cutting off the power supply of the high-voltage power supply of the micro-light detector, and forming a potential difference of 0 among the first multiplication stage, the second multiplication stage and the third multiplication stage of the voltage dividing circuit, and closing the PMT.
Preferably, the opening unit is configured to: when the laser is closed, a pulse low-level signal is input into the input end of the gating circuit, potential difference is formed among the first multiplication stage, the second multiplication stage and the third multiplication stage, and the photomultiplier PMT is opened and is also used for:
when the laser is turned off, a pulse low-level signal is input into the input end C of the gating circuit, the fast response triode Q1 of the gating circuit is turned off, potential difference is formed between the photo cathode surface P and the first multiplier stage, the second multiplier stage and the third multiplier stage, and the photomultiplier PMT is turned on.
Preferably, the closing unit is configured to: when the laser instrument is opened, through with pulse high level signal input gating circuit input, form the electric potential difference to be 0 between first multiplication level, second multiplication level and the third multiplication level, photomultiplier PMT closes, still is used for:
when the laser is started, a pulse high-level signal is input into the input end of the gating circuit, the fast response triode Q1 of the gating circuit is conducted, and a potential difference of 0 is formed between the photocathode surface P and the first multiplication stage, between the photocathode surface P and the photocathode surface of the gating circuit and between the photocathode surface of the gating circuit and the photocathode surface of the gating circuit, and between the photocathode surface of the photocathode and the photocathode surface of the gating circuit and the photocathode surface of the photocell form potential difference between the photocell surface of the photocell and the photocell surface of the photocell through the first multiplication stage and the photocell.
Preferably, the voltage dividing circuit of the micro-light detector is added with a gate control circuit, which comprises:
and adding a gate control circuit by leading out pins of the voltage dividing circuit.
Preferably, the pulse low level signal is a TTL pulse low level signal.
The technical scheme of the invention provides a method and a system for rapidly switching a photomultiplier of a micro-light detector, wherein the method comprises the following steps: adding a gate control circuit to the voltage dividing circuit of the micro-light detector; when the laser is turned off, a TTL pulse low-level signal is input into the input end of the gating circuit, potential difference is formed among a first multiplication stage, a second multiplication stage and a third multiplication stage of the voltage dividing circuit through a high-voltage power supply of the micro-light detector, and a photomultiplier PMT is turned on; when the laser is started, TTL pulse high-level signals are input into the input end of the gating circuit, the power supply of the high-voltage power supply of the micro-light detector is cut off, potential difference is 0 between the first multiplication stage, the second multiplication stage and the third multiplication stage of the voltage dividing circuit, and the PMT is closed. The technical scheme of the invention provides a design of a gate control circuit applied to a photomultiplier, and the method for controlling a first dynode and a second dynode of the photomultiplier is provided. The experimental results show that the PMT turn-off response time is 40ns and turn-on response time is 10uS. The rapid response time meets the experimental requirement, and the price is low, so that the method is easy to install.
Drawings
Exemplary embodiments of the present invention may be more completely understood in consideration of the following drawings:
FIG. 1 is a flow chart of a method for rapidly switching a photomultiplier tube of a photodetector according to a preferred embodiment of the present invention;
FIG. 2 is a schematic diagram of a platform for rapid switching of photomultiplier tubes of a photodetector according to a preferred embodiment of the present invention;
FIG. 3 is a schematic diagram of a gating circuit according to a preferred embodiment of the present invention;
FIG. 4 is a schematic diagram of the C-terminal pulse and the voltage values at DY3 when the gate signal at the C-terminal is low, according to the preferred embodiment of the present invention;
FIG. 5 is a schematic diagram of the C-terminal pulse and the voltage values at DY3 when the gate signal at the C-terminal is high, according to the preferred embodiment of the present invention; and
fig. 6 is a system configuration diagram for rapidly switching a photomultiplier of a photodetector according to a preferred embodiment of the present invention.
Detailed Description
The exemplary embodiments of the present invention will now be described with reference to the accompanying drawings, however, the present invention may be embodied in many different forms and is not limited to the examples described herein, which are provided to fully and completely disclose the present invention and fully convey the scope of the invention to those skilled in the art. The terminology used in the exemplary embodiments illustrated in the accompanying drawings is not intended to be limiting of the invention. In the drawings, like elements/components are referred to by like reference numerals.
Unless otherwise indicated, terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art. In addition, it will be understood that terms defined in commonly used dictionaries should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense.
Fig. 1 is a flow chart of a method for rapidly switching a photomultiplier tube of a photodetector according to a preferred embodiment of the present invention. According to the embodiment of the application, under the condition that an original circuit is not damaged, only corresponding multiplier-stage pins are led out, and the gating circuit is additionally arranged on the voltage dividing circuit, so that the detector can realize the gating function. The gating circuit controls the potential difference of the first three multiplication stages of the PMT through external TTL pulse, and then controls the enabling and disabling of the PMT, and has the advantages of high response speed, high extinction ratio and flexible operation. The design of the gating circuit applied to the photomultiplier is based on the CR110 type PMT design, and the gating circuit is controlled by adopting a method for controlling the first dynode and the second dynode of the photomultiplier. The experimental results showed that PMT off response time was 40ns and on response time was 10uS. The rapid response time meets the experimental requirement, and the price is low, so that the method is easy to install. As shown in fig. 1, the present application provides a method for rapidly switching a photomultiplier of a photodetector, the method comprising:
preferably, in step 101: and adding a gate control circuit to the voltage dividing circuit of the micro-light detector. Preferably, adding a gating circuit to the voltage dividing circuit of the micro-light detector includes: and the gate control circuit is added by leading out pins of the voltage dividing circuit. According to the detector, under the condition that an original circuit is not damaged, only corresponding multiplier-stage pins are led out, and the gating circuit is additionally arranged on the voltage dividing circuit, so that the detector can realize the gating function.
Preferably, at step 102: when the laser is turned off, TTL pulse low-level signals are input into the input end of the gate control circuit, potential difference is formed among a first multiplication stage, a second multiplication stage and a third multiplication stage of the voltage division circuit through a high-voltage power supply of the micro-light detector, and a photomultiplier PMT is turned on.
Preferably, when the laser is turned off, a TTL pulse low level signal is input to the gate circuit input terminal, a potential difference is formed among the first multiplier stage, the second multiplier stage and the third multiplier stage, and the photomultiplier PMT is turned on, and further including: when the laser is turned off, a TTL pulse low-level signal is input into an input end C of a gating circuit, a fast response triode Q1 of the gating circuit is turned off, potential difference is formed between a photo cathode surface P and a first multiplication stage, a second multiplication stage and a third multiplication stage, and a photomultiplier PMT is turned on.
What is contributing to the photomultiplier PMT gating operation in this application is the gating design in the voltage divider circuit, as shown in fig. 3. +HV is the input end of the high-voltage power supply, DY1, DY2 and DY3 … DYn are multiplier stages of the voltage divider, and R1, R2 and R3 … Rn are voltage dividing resistors. The above constitutes the voltage dividing circuit of the photomultiplier PMT. The triode Q1, the diode D1, the accelerating capacitor C1, the resistor R6 and the resistor R7 jointly form a gate control circuit. The emitter and collector of the triode Q1 are respectively connected with the light cathode face P and the third dynode DY3, and the C end is the input end of a gate control signal.
When the gating signal of the C end is at a low level, the triode Q1 is cut off, and potential differences among the photocathode surfaces P, DY1, DY2 and DY3 are normal. Electrons generated on the photocathode surface are accelerated and multiplied under the action of an electric field, and the PMT is conducted at the moment. The response time of PMT is about 10uS, as shown in fig. 4, A1 is the C-terminal pulse and A2 is the voltage at DY 3. The application is convenient for observation, and the signal of the C end is reversely displayed.
The gating circuit controls the potential difference of the first three multiplication stages of the PMT through external TTL pulse, and then controls the enabling and disabling of the PMT, and has the advantages of high response speed, high extinction ratio and flexible operation.
Preferably, in step 103: when the laser is started, TTL pulse high-level signals are input into the input end of the gating circuit, the power supply of the high-voltage power supply of the micro-light detector is cut off, potential difference is formed between the first multiplication stage, the second multiplication stage and the third multiplication stage of the voltage dividing circuit to be 0, and the PMT is closed.
Preferably, when the laser is turned on, by inputting a TTL pulse high level signal to the input terminal of the gating circuit, a potential difference of 0 is formed among the first multiplication stage, the second multiplication stage and the third multiplication stage, and the photomultiplier PMT is turned off, and the method further comprises: when the laser is started, a TTL pulse high-level signal is input into the input end of the gating circuit, the fast response triode Q1 of the gating circuit is conducted, and potential difference between the light cathode surface P and the first multiplication stage, the second multiplication stage and the third multiplication stage is 0.
When the gating signal of the C end is at a high level, the triode Q1 is conducted, the potential difference among the photocathode surfaces P, DY, DY2 and DY3 is zero, electrons generated by the photocathode surfaces cannot be accelerated, and therefore the aim of shutting down the photomultiplier PMT is fulfilled. The response time of the photomultiplier tube PMT is about 40nS, with B1 being the C-terminal pulse and B2 being the voltage at DY3, as shown in fig. 5. The application is convenient for observation, and the signal of the C end is reversely displayed.
The potential difference changes between the multiplication stages of the present application are shown in the following table:
fig. 6 is a system configuration diagram for rapidly switching a photomultiplier of a photodetector according to a preferred embodiment of the present invention. As shown in fig. 6, the present application provides a system for fast switching a photomultiplier of a photodetector, the system comprising:
the initial unit 601 is configured to add a gate control circuit to the voltage division circuit of the micro-light detector. Preferably, adding a gating circuit to the voltage dividing circuit of the micro-light detector includes: and the gate control circuit is added by leading out pins of the voltage dividing circuit. According to the detector, under the condition that an original circuit is not damaged, only corresponding multiplier-stage pins are led out, and the gating circuit is additionally arranged on the voltage dividing circuit, so that the detector can realize the gating function.
And the starting unit 602 is used for inputting a TTL pulse low-level signal into the input end of the gating circuit when the laser is turned off, forming potential difference among a first multiplication stage, a second multiplication stage and a third multiplication stage of the voltage division circuit through a high-voltage power supply of the micro-light detector, and starting a photomultiplier PMT.
Preferably, the opening unit 602 is configured to: when the laser is closed, TTL pulse low level signals are input into the input end of the gating circuit, potential difference is formed among the first multiplication stage, the second multiplication stage and the third multiplication stage, and the photomultiplier PMT is opened and is also used for: when the laser is turned off, a TTL pulse low-level signal is input into an input end C of a gating circuit, a fast response triode Q1 of the gating circuit is turned off, potential difference is formed between a photo cathode surface P and a first multiplication stage, a second multiplication stage and a third multiplication stage, and a photomultiplier PMT is turned on.
What is contributing to the photomultiplier PMT gating operation in this application is the gating design in the voltage divider circuit, as shown in fig. 3. +HV is the input end of the high-voltage power supply, DY1, DY2 and DY3 … DYn are multiplier stages of the voltage divider, and R1, R2 and R3 … Rn are voltage dividing resistors. The above constitutes the voltage dividing circuit of the photomultiplier PMT. The triode Q1, the diode D1, the accelerating capacitor C1, the resistor R6 and the resistor R7 jointly form a gate control circuit. The emitter and collector of the triode Q1 are respectively connected with the light cathode face P and the third dynode DY3, and the C end is the input end of a gate control signal.
When the gating signal of the C end is at a low level, the triode Q1 is cut off, and potential differences among the photocathode surfaces P, DY1, DY2 and DY3 are normal. Electrons generated on the photocathode surface are accelerated and multiplied under the action of an electric field, and the PMT is conducted at the moment. The response time of PMT is about 10uS, as shown in fig. 4, A1 is the C-terminal pulse and A2 is the voltage at DY 3. The application is convenient for observation, and the signal of the C end is reversely displayed.
The gating circuit controls the potential difference of the first three multiplication stages of the PMT through external TTL pulse, and then controls the enabling and disabling of the PMT, and has the advantages of high response speed, high extinction ratio and flexible operation.
And the closing unit 603 is configured to input a TTL pulse high level signal to an input end of the gating circuit when the laser is turned on, cut off power supply of the high voltage power supply of the micro detector, form a potential difference of 0 between the first multiplier stage, the second multiplier stage and the third multiplier stage of the voltage dividing circuit, and close the photomultiplier PMT.
Preferably, the closing unit 603 is configured to: when the laser is turned on, through inputting TTL pulse high level signals into the input end of the gate control circuit, potential difference is 0 between the first multiplication stage, the second multiplication stage and the third multiplication stage, and the photomultiplier PMT is turned off and is also used for:
when the laser is started, a TTL pulse high-level signal is input into the input end of the gating circuit, the fast response triode Q1 of the gating circuit is conducted, and potential difference between the light cathode surface P and the first multiplication stage, the second multiplication stage and the third multiplication stage is 0.
When the gating signal of the C end is at a high level, the triode Q1 is conducted, the potential difference among the photocathode surfaces P, DY, DY2 and DY3 is zero, electrons generated by the photocathode surfaces cannot be accelerated, and therefore the aim of shutting down the photomultiplier PMT is fulfilled. The response time of the photomultiplier tube PMT is about 40nS, with B1 being the C-terminal pulse and B2 being the voltage at DY3, as shown in fig. 5. The application is convenient for observation, and the signal of the C end is reversely displayed.
The potential difference changes between the multiplication stages of the present application are shown in the following table:
the invention has been described with reference to a few embodiments. However, as is well known to those skilled in the art, other embodiments than the above disclosed invention are equally possible within the scope of the invention, as defined by the appended patent claims.
Generally, all terms used in the claims are to be interpreted according to their ordinary meaning in the technical field, unless explicitly defined otherwise therein. All references to "a/an/the [ means, component, etc. ]" are to be interpreted openly as referring to at least one instance of said means, component, etc., unless explicitly stated otherwise. The steps of any method disclosed herein do not have to be performed in the exact order disclosed, unless explicitly stated.
Claims (6)
1. A method for fast switching a photomultiplier tube of a photodetector, the method comprising:
adding a gate control circuit to the voltage dividing circuit of the micro-light detector;
when the laser is closed, a pulse low-level signal is input into the input end of the gating circuit, a potential difference is formed among a first multiplication stage, a second multiplication stage and a third multiplication stage of the voltage dividing circuit through a high-voltage power supply of the micro-light detector, and a photomultiplier PMT is opened and further comprises:
when the laser is turned off, a pulse low-level signal is input into an input end C of a gating circuit, a fast response triode Q1 of the gating circuit is turned off, potential difference is formed between a photocathode surface P and a first multiplier stage, a second multiplier stage and a third multiplier stage, and a photomultiplier PMT is turned on;
when the laser is started, a pulse high-level signal is input into the input end of the gating circuit, the power supply of the high-voltage power supply of the micro-light detector is cut off, the potential difference formed among the first multiplication stage, the second multiplication stage and the third multiplication stage of the voltage dividing circuit is 0, and the photomultiplier PMT is closed, and the method further comprises the following steps:
when the laser is started, a pulse high-level signal is input into the input end of the gating circuit, the fast response triode Q1 of the gating circuit is conducted, and a potential difference of 0 is formed between the photocathode surface P and the first multiplication stage, between the photocathode surface P and the photocathode surface of the gating circuit and between the photocathode surface of the gating circuit and the photocathode surface of the gating circuit, and between the photocathode surface of the photocathode and the photocathode surface of the gating circuit and the photocathode surface of the photocell form potential difference between the photocell surface of the photocell and the photocell surface of the photocell through the first multiplication stage and the photocell.
2. The method of claim 1, the adding gating circuitry to the voltage divider circuitry of the photodetector, comprising:
and adding a gate control circuit by leading out pins of the voltage dividing circuit.
3. The method of claim 1, the pulsed low level signal is a TTL pulsed low level signal.
4. A system for fast switching of a photomultiplier tube of a photodetector, the system comprising:
the initial unit is used for adding a gate control circuit to the voltage dividing circuit of the micro-light detector;
the starting unit is used for inputting a pulse low-level signal into the input end of the gating circuit when the laser is closed, forming potential difference among a first multiplication stage, a second multiplication stage and a third multiplication stage of the voltage dividing circuit through a high-voltage power supply of the micro-light detector, and starting a photomultiplier PMT, and is also used for:
when the laser is turned off, a pulse low-level signal is input into an input end C of a gating circuit, a fast response triode Q1 of the gating circuit is turned off, potential difference is formed between a photocathode surface P and a first multiplier stage, a second multiplier stage and a third multiplier stage, and a photomultiplier PMT is turned on;
the closing unit is used for inputting a pulse high-level signal into the input end of the gating circuit when the laser is started, cutting off the power supply of the high-voltage power supply of the micro-light detector, forming a potential difference of 0 among a first multiplication stage, a second multiplication stage and a third multiplication stage of the voltage dividing circuit, closing a photomultiplier PMT and further used for: when the laser is started, a pulse high-level signal is input into the input end of the gating circuit, the fast response triode Q1 of the gating circuit is conducted, and a potential difference of 0 is formed between the photocathode surface P and the first multiplication stage, between the photocathode surface P and the photocathode surface of the gating circuit and between the photocathode surface of the gating circuit and the photocathode surface of the gating circuit, and between the photocathode surface of the photocathode and the photocathode surface of the gating circuit and the photocathode surface of the photocell form potential difference between the photocell surface of the photocell and the photocell surface of the photocell through the first multiplication stage and the photocell.
5. The system of claim 4, the voltage divider circuit of the photodetector adding a gating circuit comprising:
and adding a gate control circuit by leading out pins of the voltage dividing circuit.
6. The system of claim 4, wherein the pulsed low signal is a TTL pulsed low signal.
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