CN111769200B - Quantum dot light emitting device, quantum dot layer patterning method and display device - Google Patents
Quantum dot light emitting device, quantum dot layer patterning method and display device Download PDFInfo
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- CN111769200B CN111769200B CN202010657241.9A CN202010657241A CN111769200B CN 111769200 B CN111769200 B CN 111769200B CN 202010657241 A CN202010657241 A CN 202010657241A CN 111769200 B CN111769200 B CN 111769200B
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 283
- 238000000034 method Methods 0.000 title claims abstract description 70
- 238000000059 patterning Methods 0.000 title claims abstract description 61
- 239000000463 material Substances 0.000 claims abstract description 117
- 239000000758 substrate Substances 0.000 claims abstract description 98
- 230000007062 hydrolysis Effects 0.000 claims abstract description 18
- 238000006460 hydrolysis reaction Methods 0.000 claims abstract description 18
- 238000002347 injection Methods 0.000 claims description 61
- 239000007924 injection Substances 0.000 claims description 61
- 230000000903 blocking effect Effects 0.000 claims description 43
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 39
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 37
- 230000005525 hole transport Effects 0.000 claims description 32
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 25
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 claims description 23
- 239000002904 solvent Substances 0.000 claims description 15
- 238000004528 spin coating Methods 0.000 claims description 10
- 238000006303 photolysis reaction Methods 0.000 claims description 9
- 125000000217 alkyl group Chemical group 0.000 claims description 8
- 125000003118 aryl group Chemical group 0.000 claims description 8
- 230000005540 biological transmission Effects 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 6
- 229910052801 chlorine Inorganic materials 0.000 claims description 6
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 6
- 125000005647 linker group Chemical group 0.000 claims description 6
- -1 methoxy, ethoxy, tertiary butyl Chemical group 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 238000005406 washing Methods 0.000 claims description 4
- 238000007641 inkjet printing Methods 0.000 abstract description 7
- 238000001259 photo etching Methods 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 66
- 239000003446 ligand Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000005286 illumination Methods 0.000 description 6
- CMWKITSNTDAEDT-UHFFFAOYSA-N 2-nitrobenzaldehyde Chemical compound [O-][N+](=O)C1=CC=CC=C1C=O CMWKITSNTDAEDT-UHFFFAOYSA-N 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 3
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910015711 MoOx Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
Abstract
The invention discloses a quantum dot luminescent device, a patterning method of a quantum dot layer and a display device, wherein before forming the quantum dot layer, a photosensitive material film layer is formed on a substrate on which an oxide layer is formed, the photosensitive material is modified on the substrate after hydrolysis, and a coordination group is generated by the photosensitive material after light irradiation of preset wavelength to combine with the quantum dot layer, so that the quantum dot at the position of a reserved area is tightly combined with the photosensitive material, and the photosensitive material in the light irradiation area without the preset wavelength is not combined with the quantum dot layer; finally, removing quantum dots which are not combined with the photosensitive material in the quantum dot layer, and finishing patterning of the quantum dot layer; compared with the prior art, the method can complete patterning of the quantum dot layer without adopting an ink-jet printing method or a photoetching method, and can form the quantum dots with high resolution and good performance.
Description
Technical Field
The invention relates to the technical field of display, in particular to a quantum dot light emitting device, a quantum dot layer patterning method and a display device.
Background
With the deep development of quantum dot preparation technology, the stability and luminous efficiency of quantum dots are continuously improved, and the research of quantum dot electroluminescent diodes (Quantum Light Emitting Diode, QLEDs) is continuously in depth, so that the application prospect of the QLEDs in the display field is gradually clear. However, the current QLED generation efficiency has not reached the mass production level, and the most important reason is that the high resolution patterning technology of the QLED has not yet made a breakthrough.
The quantum dot is a zero-dimensional nano semiconductor material, the three dimensions of the quantum dot are not more than twice the exciton Bohr radius of the corresponding semiconductor material, and when the patterned quantum dot is manufactured in the prior art, the patterned quantum dot cannot be manufactured by a method of vapor deposition film formation and patterning due to the inorganic nanoparticle characteristic of the quantum dot.
The prior art generally produces patterned quantum dots by inkjet printing, and higher resolution is difficult to achieve with such methods. In order to improve the resolution of the product, the prior art adopts a photolithography method to manufacture the patterned quantum dot, and the photolithography method comprises an exposure process which easily affects the performance of the quantum dot.
In summary, the prior art cannot manufacture high-resolution quantum dots with good performance.
Disclosure of Invention
The quantum dot luminescent device, the quantum dot layer patterning method and the display device provided by the embodiment of the invention are used for forming the quantum dots with high resolution and good performance.
The embodiment of the invention provides a quantum dot light emitting device, which comprises: the quantum dot device comprises a substrate, an oxide layer positioned on the substrate, a quantum dot layer positioned on one side of the oxide layer away from the substrate, and a connection layer positioned between the oxide layer and the quantum dot layer; the silanol of the connecting layer is combined with the hydroxyl of the oxide layer, and the coordination group of the connecting layer is combined with the quantum dot layer; wherein,
the connecting layer is formed after hydrolysis of the photosensitive material and light irradiation of preset wavelength; wherein the photosensitive material has: a silane moiety that hydrolyzes to form the silanol, a photoactive moiety that forms the coordinating group upon irradiation with light of the predetermined wavelength, and a linking moiety that links the silane moiety and the photoactive moiety.
Optionally, in the quantum dot light emitting device provided by the embodiment of the present invention, the photosensitive material is
Wherein R1, R2 and R3 are respectively one or more of methoxy, ethoxy, tertiary butyl, chlorine atom or acetate, R1, R2 and R3 are the same or different, and R4 is alkyl or aryl.
Optionally, in the above quantum dot light emitting device provided by the embodiment of the present invention, the quantum dot light emitting device is of a front structure, and the oxide layer is a hole transport layer;
the quantum dot light emitting device further includes: the electron injection device comprises an anode, a hole injection layer, an electron transport layer, an electron injection layer and a cathode, wherein the anode is positioned between the substrate and the hole transport layer, the hole injection layer is positioned between the anode and the hole transport layer, the electron transport layer is positioned on one side of the quantum dot layer, which is away from the substrate, the electron injection layer is positioned on one side of the electron transport layer, which is away from the substrate, and the cathode is positioned on one side of the electron injection layer, which is away from the substrate.
Optionally, in the above quantum dot light emitting device provided by the embodiment of the present invention, the quantum dot light emitting device is of a front structure, and the oxide layer is an electron blocking layer;
the quantum dot light emitting device further includes: the electron injection device comprises an anode, a hole injection layer, a hole transport layer, a quantum dot layer, a hole blocking layer, an electron transport layer, an electron injection layer and a cathode, wherein the anode is positioned between the substrate and the electron blocking layer, the hole injection layer is positioned between the anode and the electron blocking layer, the hole transport layer is positioned between the hole injection layer and the electron blocking layer, the hole blocking layer is positioned on one side of the quantum dot layer, which is away from the substrate, the electron transport layer is positioned on one side of the hole blocking layer, which is away from the substrate, the electron injection layer is positioned on one side of the electron transport layer, which is away from the substrate, and the cathode is positioned on one side of the electron injection layer, which is away from the substrate.
Optionally, in the above quantum dot light emitting device provided by the embodiment of the present invention, the quantum dot light emitting device is an inverted structure, and the oxide layer is an electron transport layer;
the quantum dot light emitting device further includes: the electron injection layer is positioned between the cathode and the electron transport layer, the hole transport layer is positioned on one side of the quantum dot layer, which is away from the substrate, the hole injection layer is positioned on one side of the hole transport layer, which is away from the substrate, and the anode is positioned on one side of the hole injection layer, which is away from the substrate.
Optionally, in the above quantum dot light emitting device provided by the embodiment of the present invention, the quantum dot light emitting device is an inverted structure, and the oxide layer is a hole blocking layer;
the quantum dot light emitting device further includes: the electron injection layer is positioned between the cathode and the hole blocking layer, the electron transport layer is positioned between the electron injection layer and the hole blocking layer, the electron blocking layer is positioned at one side of the quantum dot layer, which is away from the substrate, the hole transport layer is positioned at one side of the electron blocking layer, which is away from the substrate, the hole injection layer is positioned at one side of the hole transport layer, which is away from the substrate, and the anode is positioned at one side of the hole injection layer, which is away from the substrate.
Correspondingly, the embodiment of the invention also provides a display device which comprises the quantum dot light-emitting device provided by the embodiment of the invention.
Correspondingly, the embodiment of the invention also provides a method for patterning the quantum dot layer, which comprises the following steps:
forming a photosensitive material film layer on the substrate on which the oxide layer is formed; wherein the photosensitive material has: a silane moiety that hydrolyzes to form silanol to be bonded to a hydroxyl group of the oxide layer, a photoactive moiety that generates a coordinating group upon irradiation with light of a predetermined wavelength, and a linking moiety that links the silane moiety and the photoactive moiety;
after the silane part is hydrolyzed to generate the silanol to be combined with the hydroxyl of the oxide layer, the reserved area of the photosensitive material film layer is irradiated with light of the preset wavelength, and the photosensitive part of the reserved area generates the coordination group through photodecomposition reaction;
forming a quantum dot layer, wherein the coordination groups generated in the reserved area are combined with the quantum dot layer;
and removing the quantum dots which are not combined with the coordination groups in the quantum dot layer, so as to form a patterned quantum dot layer in the reserved area.
Optionally, in the foregoing patterning method provided by the embodiment of the present invention, the forming a photosensitive material film layer on a substrate on which an oxide layer is formed specifically includes:
Forming an oxide layer on the substrate;
and spin-coating a photosensitive material on the oxide layer to form the photosensitive material film layer.
Optionally, in the foregoing patterning method provided by the embodiment of the present invention, the illuminating the remaining area of the photosensitive material film layer with the light of the preset wavelength specifically includes:
the mask plate is used for shielding the film layer, the mask plate comprises a light transmission area and a shading area, and the light transmission area corresponds to a reserved area in the photosensitive material film layer, which receives light irradiation.
Optionally, in the foregoing patterning method provided by the embodiment of the present invention, the forming a quantum dot layer specifically includes:
and forming the quantum dot layer by adopting a spin coating mode.
Optionally, in the foregoing patterning method provided by the embodiment of the present invention, the removing the quantum dots in the quantum dot layer that are not combined with the ligand group specifically includes:
and removing the quantum dots which are not combined with the coordination groups in the quantum dot layer by adopting a solvent.
Optionally, in the above patterning method provided by the embodiment of the present invention, the silane moiety is hydrolyzed and combined with a hydroxyl group of the oxide layer, and specifically includes:
After the oxide layer is far away from the substrate to form the photosensitive material film layer, standing for a preset time, wherein the silane part of the photosensitive material is hydrolyzed and combined with the hydroxyl of the oxide layer;
the residues not bound to the oxide layer are removed by washing with a solvent.
Optionally, in the above patterning method provided by the embodiment of the present invention, the silane moiety is hydrolyzed and combined with a hydroxyl group of the oxide layer, and specifically includes:
baking the substrate on which the photosensitive material film layer is formed, wherein the silane part of the photosensitive material is hydrolyzed and combined with the hydroxyl of the oxide layer;
the residues not bound to the oxide layer are removed by washing with a solvent.
Optionally, in the patterning method provided by the embodiment of the present invention, the photosensitive material is
Wherein R1, R2 and R3 are methoxy, ethoxy, tertiary butyl, chlorine atom or acetate, and R4 is alkyl or aryl.
The embodiment of the invention has the beneficial effects that:
according to the quantum dot light-emitting device, the quantum dot layer patterning method and the display device provided by the embodiment of the invention, before the quantum dot layer is formed, a photosensitive material film layer is formed on a substrate on which an oxide layer is formed, and the photosensitive material has a silane part for generating silanol through hydrolysis, and the oxide layer generally has hydroxyl, so that silanol generated through hydrolysis of the photosensitive material can be combined with the hydroxyl of the oxide layer, and the photosensitive material is modified on the substrate; the photosensitive material is provided with a photosensitive part which generates a coordination group after light irradiation with preset wavelength, so that the light irradiation with the preset wavelength is adopted to irradiate a reserved area of the film layer, and the photosensitive part generates the coordination group through photodecomposition reaction; then forming a quantum dot layer, and combining the coordination groups generated in the reserved area with the quantum dot layer, so that the quantum dots at the position of the reserved area are tightly combined with the photosensitive material; at this time, the photosensitive material in the reserved area of the film layer is combined with the quantum dot layer, and the photosensitive material in the area of the film layer which is not irradiated by light with preset wavelength is not combined with the quantum dot layer; finally, removing quantum dots which are not combined with the photosensitive material in the quantum dot layer, and finishing patterning of the quantum dot layer; compared with the prior art, the method can complete patterning of the quantum dot layer without adopting an ink-jet printing method or a photoetching method, and can form the quantum dots with high resolution and good performance.
Drawings
Fig. 1 is a schematic diagram of a quantum dot light emitting device according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of another quantum dot light emitting device according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of another quantum dot light emitting device according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of another quantum dot light emitting device according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of another quantum dot light emitting device according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of another quantum dot light emitting device according to an embodiment of the present invention;
FIG. 7 is a flowchart of a method for patterning a quantum dot layer according to an embodiment of the present invention;
FIG. 8 is a second flowchart of a method for patterning a quantum dot layer according to an embodiment of the present invention;
FIG. 9 is a third flowchart of a method for patterning a quantum dot layer according to an embodiment of the present invention;
FIG. 10 is a flowchart of a method for patterning a quantum dot layer according to an embodiment of the present invention;
fig. 11A to 11L are schematic structural diagrams of a method for manufacturing a quantum dot layer patterning method according to an embodiment of the present invention after each step is performed.
Detailed Description
In order to make the technical solution and advantages of the present invention more clear, the following describes in detail specific embodiments of a method for patterning a quantum dot layer, a method for manufacturing the same, and a display device provided in the embodiments of the present invention with reference to the accompanying drawings.
The thickness and shape of the films of the layers in the drawings do not reflect the true proportion of the method of patterning the quantum dot layers, and are intended to illustrate the invention only.
An embodiment of the present invention provides a quantum dot light emitting device, as shown in fig. 1 and 2, including: a substrate 1, an oxide layer 2 on the substrate 1, a quantum dot layer 3 on the side of the oxide layer 2 facing away from the substrate 1, and a connection layer 4 between the oxide layer 2 and the quantum dot layer 3; silanol-Si (OH) 3 of the connection layer 4 is bonded to the hydroxyl group of the oxide layer 2, and a ligand (-COOH) of the connection layer 4 is bonded to the quantum dot layer 3; wherein,
the connection layer 4 is formed after hydrolysis of the photosensitive material and irradiation of light of a predetermined wavelength (this part will be described later in detail); wherein the photosensitive material has: a silane moiety that hydrolyzes to form a silanol, a photoactive moiety that generates a coordinating group upon irradiation with light of a predetermined wavelength, and a linking moiety that links the silane moiety and the photoactive moiety.
The embodiment of the invention provides the quantum dot luminescent device, and the connecting layer is arranged between the oxide layer and the quantum dot layer, and is formed after hydrolysis of the photosensitive material and light irradiation of preset wavelength, so that before the quantum dot layer is formed, a layer of photosensitive material film layer is formed on a substrate on which the oxide layer is formed, and the photosensitive material has a silane part for generating silanol through hydrolysis, and the oxide layer generally has hydroxyl, so that silanol generated through hydrolysis of the photosensitive material can be combined with the hydroxyl of the oxide layer, thereby modifying the photosensitive material on the substrate; the photosensitive material is provided with a photosensitive part which generates a coordination group after light irradiation with preset wavelength, so that the photosensitive part generates the coordination group through photodecomposition reaction by adopting the light irradiation with the preset wavelength to irradiate a reserved area corresponding to a film layer of the photosensitive material; then forming a quantum dot layer, and combining the coordination groups generated in the reserved area with the quantum dot layer, so that the quantum dots at the position of the reserved area are tightly combined with the photosensitive material; at this time, the photosensitive material in the reserved area is combined with the quantum dot layer, and the photosensitive material which is not irradiated by light with preset wavelength is not combined with the quantum dot layer; finally, removing quantum dots which are not combined with the photosensitive material in the quantum dot layer, and finishing patterning of the quantum dot layer; compared with the prior art, the method can complete patterning of the quantum dot layer without adopting an ink-jet printing method or a photoetching method, and can form the quantum dots with high resolution and good performance.
In a specific implementation, in the quantum dot light emitting device provided by the embodiment of the present invention, the structure of the photosensitive material is that
Wherein R1, R2 and R3 can respectively select one or more of methoxy, ethoxy, tertiary butyl, chlorine atom or acetate, R1, R2 and R3 can be the same or different, and R4 is alkyl or aryl.
Specifically, in the structure of the photosensitive material, siR1R2R3 is a silane part, and silanol is generated after hydrolysis. Since the surface of the oxide layer on the substrate contains a large amount of hydroxyl groups, after the photosensitive material film layer is formed on the oxide layer, the silane moiety is hydrolyzed, for example, r1=r2=r3=ome (methoxy), by the mechanism of-Si (OMe) 3→ -Si (OH) 3, and then silanol-Si (OH) 3 moiety can react with the hydroxyl groups on the surface of the oxide layer to become siloxane, thereby being tightly bonded to the oxide layer. The specific hydrolysis mechanism is as follows:
specifically, the R4 part in the structure of the photosensitive material is a connecting function, and can be alkyl, aromatic group and the like, and no special requirement is required for the R4 group, so long as the silane part and the photosensitive part can be connected together, and most common R4 is alkyl and aryl.
In particular, in the structure of the above photosensitive materialThe light-sensitive part can be decomposed into carboxyl and o-nitrobenzaldehyde after illumination (hv), namely the light-sensitive part has the function of generating a coordination group (carboxyl) after illumination, and the carboxyl can be combined with any quantum dot, namely the carboxyl is used as a ligand of the quantum dot, so that the quantum dot in the illumination area is tightly combined on a substrate. The mechanism of specific photoactive moiety decomposition is as follows:
in specific implementation, the light with the preset wavelength in the embodiment of the invention generally refers to ultraviolet light with the wavelength in the range of 300nm-400nm, and in the wavelength range, the photosensitive part can generate carboxyl and o-nitrobenzaldehyde through photolysis reaction, the carboxyl is combined with the quantum dot, and the o-nitrobenzaldehyde is washed by a solvent.
In specific implementation, the light irradiation time of the preset wavelength can be 5s-30sThe dose of light irradiation was 10MJ/cm 2 -80MJ/cm 2 。
In practice, the thickness of the connection layer may be made very thin, for example less than 1nm, to achieve intimate connection of the oxide layer and the quantum dot layer.
Specifically, in the quantum dot light emitting device provided by the embodiment of the present invention, the formation principle of the connection layer is as follows: when an oxide layer is formed on a substrate, the oxide layer generally contains a large number of hydroxyl groups, and when a photosensitive material film layer is formed on the oxide layer, silanol generated after the silane of the photosensitive material is partially hydrolyzed can be tightly bonded to the surface of the oxide layer. After the substrate modified by the photosensitive material is irradiated by ultraviolet light, the photosensitive part is decomposed to release carboxyl which is a ligand group of the quantum dot, so that the substrate can be tightly combined with the quantum dot. And the places without ultraviolet irradiation have no carboxyl groups and cannot be combined with quantum dots. Therefore, after illumination, the quantum dots are coated, the substrate is cleaned, carboxyl groups at illumination positions are tightly combined with the quantum dots, and the quantum dots at places without illumination are cleaned, so that patterning of the quantum dots is realized. Taking the example that R1, R2 and R3 are methoxy and the connecting part R4 is amyl, the specific process for forming the connecting layer is as follows:
The hydroxyl group of silanol and the hydroxyl group of oxide layer are dehydrated and combined together, and the carboxyl group and the quantum dot are combined together. Specifically, as shown in fig. 2, a part of the hydroxyl groups of silanol reacts with the hydroxyl groups of the oxide layer, and a part reacts with the hydroxyl groups of the adjacent silanol.
Specifically, since the electroluminescent device is generally divided into a positive structure and an inverted structure, the oxide layer is a previous film layer of the quantum dot layer, and when the quantum dot luminescent device is in the positive structure, the oxide layer may be a hole transport layer or an electron blocking layer; when the quantum dot light emitting device is an inverted structure, the oxide layer may be an electron transport layer or a hole blocking layer.
The following describes a specific structure of a quantum dot light emitting device provided in the embodiment of the present invention.
In a specific implementation, in the above quantum dot light emitting device provided by the embodiment of the present invention, as shown in fig. 3, the quantum dot light emitting device is in a front structure, and the oxide layer 2 may be a hole transport layer 5;
the quantum dot light emitting device further includes: an anode 6 between the substrate 1 and the hole transport layer 5, a hole injection layer 7 between the anode 6 and the hole transport layer 5, an electron transport layer 8 on the side of the quantum dot layer 3 facing away from the substrate 1, an electron injection layer 9 on the side of the electron transport layer 8 facing away from the substrate 1, and a cathode 10 on the side of the electron injection layer 9 facing away from the substrate 1.
Specifically, the hole transport layer may be an inorganic thin film such as NiO, WOx, moOx, VOx, or may be inorganic nanoparticles such as NiO, WOx, moOx, VOx, or may be an inorganic-organic hybrid system such as PESOT: PSS hybrid MoOx.
In a specific implementation, in the above-mentioned quantum dot light emitting device provided by the embodiment of the present invention, as shown in fig. 4, the quantum dot light emitting device is in a front structure, and the oxide layer 2 may be an electron blocking layer 11;
the quantum dot light emitting device further includes: an anode 6 between the substrate 1 and the electron blocking layer 11, a hole injection layer 7 between the anode 6 and the electron blocking layer 11, a hole transport layer 5 between the hole injection layer 7 and the electron blocking layer 11, a hole blocking layer 12 on the side of the quantum dot layer 3 facing away from the substrate 1, an electron transport layer 8 on the side of the hole blocking layer 12 facing away from the substrate 1, an electron injection layer 9 on the side of the electron transport layer 8 facing away from the substrate 1, and a cathode 10 on the side of the electron injection layer 9 facing away from the substrate 1.
Specifically, the material of the electron blocking layer may be an insulating oxide material such as Al2O3, siOx, or the like.
In a specific implementation, in the above-mentioned quantum dot light emitting device provided by the embodiment of the present invention, as shown in fig. 5, the quantum dot light emitting device has an inverted structure, and the oxide layer 2 may be the electron transport layer 8;
The quantum dot light emitting device further includes: a cathode 10 between the substrate 1 and the electron transport layer 8, an electron injection layer 9 between the cathode 10 and the electron transport layer 8, a hole transport layer 5 on the side of the quantum dot layer 3 facing away from the substrate 1, a hole injection layer 7 on the side of the hole transport layer 5 facing away from the substrate 1, and an anode 6 on the side of the hole injection layer 7 facing away from the substrate 1.
Specifically, the material of the electron transport layer may be an inorganic thin film such as ZnO, znMgO, tiO2, or may be inorganic nanoparticles such as ZnO, znMgO, tiO 2.
In a specific implementation, in the above-mentioned quantum dot light emitting device provided in the embodiment of the present invention, as shown in fig. 6, the quantum dot light emitting device has an inverted structure, and the oxide layer 2 may be a hole blocking layer 12;
the quantum dot light emitting device further includes: a cathode 10 between the substrate 1 and the hole blocking layer 12, an electron injection layer 9 between the cathode 10 and the hole blocking layer 12, an electron transport layer 8 between the electron injection layer 9 and the hole blocking layer 12, an electron blocking layer 11 on the side of the quantum dot layer 3 facing away from the substrate 1, a hole transport layer 5 on the side of the electron blocking layer 11 facing away from the substrate 1, a hole injection layer 7 on the side of the hole transport layer 5 facing away from the substrate 1, and an anode 6 on the side of the hole injection layer 7 facing away from the substrate 1.
It should be noted that the principle of luminescence of the electroluminescent device is as follows: the electron of the positive electrode and the electron of the negative electrode are transmitted to the luminescent layer (quantum dot layer) to be emitted in a compound way, because of the difference of energy level barriers between the positive electrode and the luminescent layer and between the negative electrode and the luminescent layer, the electron and the hole are transmitted more difficultly, and the transmission rate and the quantity are also greatly different, so in order to balance the concentration of the electron and the hole, a hole injection layer, a hole transmission layer and an electron blocking layer are generally arranged between the luminescent layer (quantum dot layer) and the positive electrode, and an electron injection layer, an electron transmission layer and a hole blocking layer are arranged between the luminescent layer (quantum dot layer) and the negative electrode. The material of the film layer contacted with the quantum dot layer is an oxide layer, so that the connecting layer can be formed before the quantum dot layer is formed, the connecting layer adopts photosensitive materials to be hydrolyzed and illuminated, one end of the connecting layer is tightly combined with the substrate, and the other end of the connecting layer is tightly combined with the quantum dot layer, so that the patterning of the quantum dot layer is realized.
Based on the same inventive concept, the embodiment of the present invention further provides a method for patterning a quantum dot layer, as shown in fig. 7, which may include:
S701, forming a photosensitive material film layer on a substrate on which an oxide layer is formed; wherein the photosensitive material has: a silane moiety that hydrolyzes to form silanol and hydroxyl groups of the oxide layer, a photoactive moiety that generates a coordinating group upon irradiation with light of a predetermined wavelength, and a linking moiety that links the silane moiety and the photoactive moiety;
s702, after the silane part is hydrolyzed to generate silanol and the hydroxyl of the oxide layer is combined, the reserved area of the film layer is irradiated with light of a preset wavelength, and the photosensitive part of the reserved area generates ligand groups through photodecomposition reaction;
s703, forming a quantum dot layer, wherein the coordination groups generated in the reserved area are combined with the quantum dot layer;
and S704, removing the quantum dots which are not combined with the coordination groups in the quantum dot layer to form a patterned quantum dot layer in the reserved area.
According to the method for patterning the quantum dot layer, before the quantum dot layer is formed, a layer of photosensitive material film layer is formed on a substrate on which an oxide layer is formed, and the photosensitive material has a silane part for generating silanol through hydrolysis, and the oxide layer generally has hydroxyl, so that silanol generated through hydrolysis of the photosensitive material can be combined with the hydroxyl of the oxide layer, and the photosensitive material is modified on the substrate; the photosensitive material is provided with a photosensitive part which generates a coordination group after light irradiation with preset wavelength, so that the light irradiation with the preset wavelength is adopted to irradiate a reserved area of the film layer, and the photosensitive part generates the coordination group through photodecomposition reaction; then forming a quantum dot layer, and combining the coordination groups generated in the reserved area with the quantum dot layer, so that the quantum dots at the position of the reserved area are tightly combined with the photosensitive material; at this time, the photosensitive material in the reserved area of the film layer is combined with the quantum dot layer, and the photosensitive material in the area of the film layer which is not irradiated by light with preset wavelength is not combined with the quantum dot layer; finally, removing quantum dots which are not combined with the photosensitive material in the quantum dot layer, and finishing patterning of the quantum dot layer; compared with the prior art, the method can complete patterning of the quantum dot layer without adopting an ink-jet printing method or a photoetching method, and can form the quantum dots with high resolution and good performance.
In a specific implementation, in the patterning method provided by the embodiment of the invention, the quantum dots which are not combined with the coordination groups in the quantum dot layer are removed, specifically, the quantum dots which are not combined with the coordination groups in the quantum dot layer can be removed by adopting a solvent, and the method for removing the quantum dots by adopting the solvent is simpler and easier in the actual production process and has lower production cost.
In order to realize full-color display, the quantum dot layer generally comprises patterned quantum dots with different colors, and the embodiment of the invention takes the example that the quantum dot layer comprises a first quantum dot layer, a second quantum dot layer and a third quantum dot layer, and the method for patterning the quantum dot layer provided by the embodiment of the invention is described in detail with reference to the accompanying drawings.
In a specific implementation, in the above patterning method provided by the embodiment of the present invention, a photosensitive material film layer is formed on a substrate on which an oxide layer is formed, as shown in fig. 8, which may specifically include:
s801, forming an oxide layer on a substrate;
specifically, as shown in fig. 11A, an oxide layer 2 is formed on the substrate 1, where the oxide layer 2 may be a hole transport layer, an electron blocking layer, an electron transport layer or a hole blocking layer, and the specific structure may be referred to the description of the above quantum dot light emitting device, and will not be described herein.
S802, spin-coating a photosensitive material on the oxide layer to form a film layer;
specifically, as shown in fig. 11B, a photosensitive material is spin-coated on the oxide layer 2 to form a photosensitive material film 41, and straight lines in the photosensitive material film 41 represent connection portions, circles represent photosensitive portions, and silane portions are directly schematically connected to the oxide layer 2.
In a specific implementation, in the above patterning method provided by the embodiment of the present invention, as shown in fig. 11B, after the photosensitive material is spin-coated on the oxide layer 2 to form the photosensitive material film 41, the silane moiety is hydrolyzed to combine with the hydroxyl group of the oxide layer 2, as shown in fig. 9, which may specifically include:
s901, after a photosensitive material film layer is formed on one side of an oxide layer, which is far away from a substrate, standing for a preset time, wherein a silane part of the photosensitive material is hydrolyzed and combined with a hydroxyl group of the oxide layer;
s902, cleaning by using a solvent to remove residues which are not bonded on the oxide layer.
Specifically, as shown in fig. 11B, fig. 11B is a schematic diagram after the photosensitive material is hydrolyzed and then bonded to the hydroxyl groups of the oxide layer 2.
Alternatively, in the method for patterning according to the embodiment of the present invention, as shown in fig. 11B, after spin-coating a photosensitive material on the oxide layer 2 to form a photosensitive material-coated film 41, the silane moiety is hydrolyzed to combine with the hydroxyl group of the oxide layer 2, as shown in fig. 10, which may specifically include:
S1001, baking the substrate on which the photosensitive material film layer is formed, wherein the silane part of the photosensitive material is hydrolyzed and combined with the hydroxyl of the oxide layer;
specifically, the substrate on which the photosensitive material film layer is formed may be baked (i.e., heated to accelerate the partial hydrolysis of silane) at a temperature in the range of 40 to 80 ℃.
S1002, cleaning by using a solvent to remove residues which are not bonded on the oxide layer.
Specifically, as shown in fig. 11B, fig. 11B is a schematic diagram after the photosensitive material is hydrolyzed and then bonded to the hydroxyl groups of the oxide layer 2.
In specific implementation, as shown in fig. 11C, light with a preset wavelength (indicated by an arrow direction in the figure) is used to irradiate a first reserved area of the film layer 41, where the first reserved area corresponds to a subsequent area where the first quantum dot layer needs to be formed; in a specific implementation, in the above patterning method provided by the embodiment of the present invention, the film 41 may be irradiated with ultraviolet light of 300nm-400nm for 5s-30s, and when the film 41 is irradiated, the film 41 may be blocked by using the mask 42, where the mask 42 includes a light-transmitting area 421 and a light-blocking area 422, and the light-transmitting area 421 corresponds to a first remaining area of the film 41 that receives light irradiation.
As shown in fig. 11D, fig. 11D shows that after the film 41 is irradiated with ultraviolet light of 300nm to 400nm, the photosensitive portion of the first remaining region is photolyzed to generate carboxyl groups, i.e., circles (photosensitive portions) of the first remaining region in fig. 11D are decomposed.
In a specific implementation, in the above patterning method disclosed in the embodiment of the present invention, a quantum dot layer is formed, which specifically includes:
and forming a quantum dot layer by adopting a spin coating mode.
Specifically, as shown in fig. 11E, a first quantum dot layer 31 is formed on the substrate 1 after being irradiated with light by spin coating; as shown in fig. 11F, the first quantum dot layer 31 is bonded to the carboxyl group generated in the first holding region of the film layer 41, and therefore the ligand group in the position irradiated with light, i.e., in the first holding region, is tightly bonded to the first quantum dot layer 31; then, the first quantum dots in the first quantum dot layer 31 which are not bound to the carboxyl group are removed, and patterning of the first quantum dot layer is completed, and since the first quantum dots at the positions corresponding to the film layer 41 which are not irradiated with light of the predetermined wavelength are not bound to the carboxyl group, the first quantum dots in the first quantum dot layer 31 which are not bound to the ligand group can be easily removed by the solvent.
It should be noted that, when the solvent is used to remove the first quantum dot that is not bound to the ligand group, other residues on the substrate 1, such as o-nitrobenzaldehyde generated by photodecomposition, etc., can be removed at the same time.
Next, as shown in fig. 11G, light with a preset wavelength (indicated by an arrow direction in the figure) is used to irradiate a second reserved area of the film layer 41, where the second reserved area corresponds to a subsequent area where the second quantum dot layer needs to be formed; in a specific implementation, in the above patterning method provided by the embodiment of the present invention, the film 41 may be irradiated with ultraviolet light of 300nm-400nm for 5s-30s, and when the film 41 is irradiated, the film 41 may be blocked by using the mask 42, where the mask 42 includes a light-transmitting area 421 and a light-blocking area 422, and the light-transmitting area 421 corresponds to a second reserved area of the film 41 that receives light irradiation.
As shown in fig. 11H, fig. 11H shows that after the film 41 is irradiated with ultraviolet light of 300nm to 400nm, the photo-sensitive portion of the second reserved area irradiated with the light is photo-decomposed to generate carboxyl groups, that is, the circles (photo-sensitive portion) of the second reserved area in fig. 11H are decomposed.
Next, as shown in fig. 11I, a second quantum dot layer 32 is formed on the substrate 1 after being irradiated with light by spin coating, and the second quantum dot layer 32 is bonded to the carboxyl group formed in the second reserved area of the film 41, so that the ligand group in the second reserved area, which is the position irradiated with light, is tightly bonded to the second quantum dot layer 32; then, the film 41 not irradiated with light of the predetermined wavelength is removed, that is, the second quantum dots of the second quantum dot layer 32 not bonded to the carboxyl group are removed, and patterning of the second quantum dot layer is completed, and since the second quantum dots of the film 41 not irradiated with light of the predetermined wavelength are not bonded to the carboxyl group, the second quantum dots of the second quantum dot layer 32 not bonded to the ligand group can be easily removed by the solvent.
Next, as shown in fig. 11J, light with a preset wavelength (indicated by an arrow direction in the figure) is used to irradiate a third reserved area of the film layer 41, where the third reserved area corresponds to a subsequent area where a third quantum dot layer needs to be formed; in a specific implementation, in the above patterning method provided by the embodiment of the present invention, the film 41 may be irradiated with ultraviolet light of 300nm-400nm for 5s-30s, and when the film 41 is irradiated, the film 41 may be blocked by using the mask 42, where the mask 42 includes a light-transmitting area 421 and a light-blocking area 422, and the light-transmitting area 421 corresponds to a third reserved area in the film 41 that receives light irradiation.
As shown in fig. 11K, fig. 11K shows that after the film 41 is irradiated with ultraviolet light of 300nm to 400nm, the photo-sensitive portion of the third reserved area irradiated with the light is photo-decomposed to generate carboxyl groups, that is, the circles (photo-sensitive portion) of the second reserved area in fig. 11K are decomposed.
Next, as shown in fig. 11L, a third quantum dot layer 33 is formed on the substrate 1 after being irradiated with light by spin coating, and the third quantum dot layer 33 is bonded to the carboxyl group formed in the third reserved area of the film layer 41, so that the ligand group in the third reserved area, which is the position irradiated with light, is tightly bonded to the third quantum dot layer 33; then, the film 41 not irradiated with light of the preset wavelength is removed, that is, the third quantum dots not bonded to the carboxyl group in the third quantum dot layer 33 are removed, and patterning of the third quantum dot layer is completed, and since the third quantum dots at the corresponding positions of the film 41 not irradiated with light of the preset wavelength are not bonded to the carboxyl group, the third quantum dots not bonded to the ligand group in the third quantum dot layer 33 can be easily removed by the solvent.
In a specific implementation, the color of the light emitted by the first quantum dot layer, the color of the light emitted by the second quantum dot layer and the color of the light emitted by the third quantum dot layer are respectively red, green and blue in the embodiment of the invention, so that the embodiment of the invention completes the patterning process of the full-color quantum dots by the patterning method. According to the embodiment of the invention, patterning of the quantum dot layer can be completed without adopting ink-jet printing or a photoetching method, and the quantum dot with high resolution and good performance can be formed.
In a specific implementation, in the patterning method provided by the embodiment of the present invention, the structure of the photosensitive material is that
Wherein R1, R2 and R3 are methoxy, ethoxy, tertiary butyl, chlorine atom or acetate, and R4 is alkyl or aryl.
Specifically, the hydrolysis principle of the photosensitive material and the decomposition principle under light irradiation are referred to the above description of the photosensitive material in the quantum dot light emitting device, and are not described herein.
The following is a simple description of the method for manufacturing the quantum dot light emitting device according to the embodiment of the present invention with reference to fig. 3.
As shown in fig. 3, the anode 6 is fabricated on the substrate 1 by a patterning process, and the fabrication method of the anode 6 is the same as that of the prior art, and will not be described in detail herein; next, a hole injection layer 7 is formed on the anode 6; next, a hole transport layer 5 is formed on the sub-hole injection layer 7; the manufacturing methods of the hole injection layer 7 and the hole transport layer 5 are the same as those of the prior art, and are not described in detail herein; next, forming a connection layer 4 and a quantum dot layer 3 including a first quantum dot layer, a second quantum dot layer and a third quantum dot layer on the hole transport layer 5 by using the above-mentioned quantum dot layer patterning method; then, an electron transport layer 8, an electron injection layer 9 and a cathode 10 are sequentially manufactured on the quantum dot layer 3; the electron transport layer 8, the electron injection layer 9 and the cathode 10 are fabricated in the same manner as in the prior art, and will not be described in detail here.
Based on the same inventive concept, the embodiment of the invention also provides a display device, which comprises the quantum dot light emitting device provided by the embodiment of the invention.
In a specific implementation, the display device provided by the embodiment of the present invention may be: any product or component with display function such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator and the like. Other essential components of the display device will be understood by those skilled in the art, and are not described herein in detail, nor should they be considered as limiting the invention. The implementation of the display device can be referred to the embodiment of the quantum dot light emitting device, and the repetition is not repeated.
In specific implementation, the display device provided in the embodiments of the present invention may further include other functional film layers well known to those skilled in the art, which are not described in detail herein.
According to the quantum dot luminescent device, the quantum dot layer patterning method and the display device provided by the embodiment of the invention, the connecting layer is arranged between the oxide layer and the quantum dot layer, and is formed after hydrolysis of the photosensitive material and light irradiation with preset wavelength, so that before the quantum dot layer is formed, a photosensitive material film layer is formed on a substrate on which the oxide layer is formed, and as the photosensitive material has a silane part for generating silanol through hydrolysis, the oxide layer generally has hydroxyl, so that silanol generated through hydrolysis of the photosensitive material can be combined with the hydroxyl of the oxide layer, and the photosensitive material is modified on the substrate; the photosensitive material is provided with a photosensitive part which generates a coordination group after light irradiation with preset wavelength, so that the photosensitive part generates the coordination group through photodecomposition reaction by adopting the light irradiation with the preset wavelength to irradiate a reserved area corresponding to a film layer of the photosensitive material; then forming a quantum dot layer, and combining the coordination groups generated in the reserved area with the quantum dot layer, so that the quantum dots at the position of the reserved area are tightly combined with the photosensitive material; at this time, the photosensitive material in the reserved area is combined with the quantum dot layer, and the photosensitive material in the area of the film layer which is not irradiated by light with preset wavelength is not combined with the quantum dot layer; finally, removing quantum dots which are not combined with the photosensitive material in the quantum dot layer, and finishing patterning of the quantum dot layer; compared with the prior art, the method can complete patterning of the quantum dot layer without adopting an ink-jet printing method or a photoetching method, and can form the quantum dots with high resolution and good performance.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (11)
1. A quantum dot light emitting device, comprising: the quantum dot device comprises a substrate, an oxide layer positioned on the substrate, a quantum dot layer positioned on one side of the oxide layer away from the substrate, and a connection layer positioned between the oxide layer and the quantum dot layer; the silanol of the connecting layer is combined with the hydroxyl of the oxide layer, the coordination group of the connecting layer is combined with the quantum dot layer, and the coordination group is carboxyl; wherein,
the connecting layer is formed after hydrolysis of the photosensitive material and light irradiation of preset wavelength; wherein the photosensitive material has: a silane moiety which hydrolyzes to form the silanol, a photoactive moiety which forms the coordinating group upon irradiation with light of the predetermined wavelength, and a linking moiety which links the silane moiety and the photoactive moiety, the photoactive material being
Wherein R1, R2 and R3 respectively select one or more of methoxy, ethoxy, tertiary butyl, chlorine atom or acetate, R1, R2 and R3 are the same or different, R4 is alkyl or aryl, the preset wavelength is 300-400 nm, the light irradiation time of the preset wavelength is 5s-30s, and the light irradiation dosage of the preset wavelength is 10MJ/cm 2 -80MJ/cm 2 The thickness of the connecting layer is less than 1nm;
wherein the silane moiety is hydrolyzed to bond with the hydroxyl group of the oxide layer, specifically comprising: baking the substrate on which the film layer of the photosensitive material is formed at a temperature ranging from 40 ℃ to 80 ℃, wherein the silane part of the photosensitive material is hydrolyzed and combined with the hydroxyl group of the oxide layer; the residues not bound to the oxide layer are removed by washing with a solvent.
2. The quantum dot light emitting device of claim 1, wherein the quantum dot light emitting device is a front-side structure and the oxide layer is a hole transport layer;
the quantum dot light emitting device further includes: the electron injection device comprises an anode, a hole injection layer, an electron transport layer, an electron injection layer and a cathode, wherein the anode is positioned between the substrate and the hole transport layer, the hole injection layer is positioned between the anode and the hole transport layer, the electron transport layer is positioned on one side of the quantum dot layer, which is away from the substrate, the electron injection layer is positioned on one side of the electron transport layer, which is away from the substrate, and the cathode is positioned on one side of the electron injection layer, which is away from the substrate.
3. The quantum dot light emitting device of claim 1, wherein the quantum dot light emitting device is a front-side structure and the oxide layer is an electron blocking layer;
The quantum dot light emitting device further includes: the electron injection device comprises an anode, a hole injection layer, a hole transport layer, a quantum dot layer, a hole blocking layer, an electron transport layer, an electron injection layer and a cathode, wherein the anode is positioned between the substrate and the electron blocking layer, the hole injection layer is positioned between the anode and the electron blocking layer, the hole transport layer is positioned between the hole injection layer and the electron blocking layer, the hole blocking layer is positioned on one side of the quantum dot layer, which is away from the substrate, the electron transport layer is positioned on one side of the hole blocking layer, which is away from the substrate, the electron injection layer is positioned on one side of the electron transport layer, which is away from the substrate, and the cathode is positioned on one side of the electron injection layer, which is away from the substrate.
4. The quantum dot light emitting device of claim 1, wherein the quantum dot light emitting device is an inverted structure and the oxide layer is an electron transport layer;
the quantum dot light emitting device further includes: the electron injection layer is positioned between the cathode and the electron transport layer, the hole transport layer is positioned on one side of the quantum dot layer, which is away from the substrate, the hole injection layer is positioned on one side of the hole transport layer, which is away from the substrate, and the anode is positioned on one side of the hole injection layer, which is away from the substrate.
5. The quantum dot light emitting device of claim 1, wherein the quantum dot light emitting device is an inverted structure and the oxide layer is a hole blocking layer;
the quantum dot light emitting device further includes: the electron injection layer is positioned between the cathode and the hole blocking layer, the electron transport layer is positioned between the electron injection layer and the hole blocking layer, the electron blocking layer is positioned at one side of the quantum dot layer, which is away from the substrate, the hole transport layer is positioned at one side of the electron blocking layer, which is away from the substrate, the hole injection layer is positioned at one side of the hole transport layer, which is away from the substrate, and the anode is positioned at one side of the hole injection layer, which is away from the substrate.
6. A display device comprising a quantum dot light emitting device according to any one of claims 1 to 5.
7. A method of quantum dot layer patterning, applied to a quantum dot light emitting device according to any one of claims 1 to 5, comprising:
forming a photosensitive material film layer on the substrate on which the oxide layer is formed; wherein the photosensitive material has: a silane moiety that hydrolyzes to form silanol to be bonded to a hydroxyl group of the oxide layer, a photoactive moiety that generates a coordinating group upon irradiation with light of a predetermined wavelength, and a linking moiety that links the silane moiety and the photoactive moiety;
After the silane part is hydrolyzed to generate the silanol to be combined with the hydroxyl of the oxide layer, the reserved area of the photosensitive material film layer is irradiated with light of the preset wavelength, and the photosensitive part of the reserved area generates the coordination group through photodecomposition reaction, wherein the coordination group is carboxyl;
forming a quantum dot layer, wherein the coordination groups generated in the reserved area are combined with the quantum dot layer;
removing quantum dots in the quantum dot layer which are not combined with the coordination group so as to form a patterned quantum dot layer in the reserved area;
wherein the photosensitive material is
Wherein R1, R2 and R3 are methoxy, ethoxy, tertiary butyl, chlorine atom or acetate, R4 is alkyl or aryl, the preset wavelength is 300-400 nm, the light irradiation time of the preset wavelength is 5s-30s, and the light irradiation dosage of the preset wavelength is 10MJ/cm 2 -80MJ/cm 2 The thickness of the connecting layer is less than 1nm;
wherein the silane moiety is hydrolyzed to bond with the hydroxyl group of the oxide layer, specifically comprising: baking the substrate on which the film layer of the photosensitive material is formed at a temperature ranging from 40 ℃ to 80 ℃, wherein the silane part of the photosensitive material is hydrolyzed and combined with the hydroxyl group of the oxide layer; the residues not bound to the oxide layer are removed by washing with a solvent.
8. The patterning process of claim 7, wherein said forming a layer of photosensitive material on the substrate having the oxide layer formed thereon, comprises:
forming an oxide layer on the substrate;
and spin-coating a photosensitive material on the oxide layer to form the photosensitive material film layer.
9. The method of patterning of claim 7, wherein said illuminating a remaining area of said photosensitive material film with said predetermined wavelength of light comprises:
the photosensitive material film layer is shielded by a mask, the mask comprises a light transmission area and a shading area, and the light transmission area corresponds to a reserved area in the photosensitive material film layer, which is irradiated by light.
10. The patterning process of claim 7, wherein said forming a quantum dot layer, in particular, comprises:
and forming the quantum dot layer by adopting a spin coating mode.
11. The method of patterning of claim 7, wherein said removing quantum dots in said quantum dot layer that are not bound to said coordinating group, specifically comprises:
and removing the quantum dots which are not combined with the coordination groups in the quantum dot layer by adopting a solvent.
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| CN114649484A (en) * | 2020-12-17 | 2022-06-21 | 京东方科技集团股份有限公司 | Quantum dot device, display device and manufacturing method of quantum dot device |
| CN112599692A (en) * | 2021-01-06 | 2021-04-02 | 福州大学 | Nano-scale pixelized quantum dot light-emitting device based on photoetching process and preparation method thereof |
| US20230165025A1 (en) * | 2021-01-27 | 2023-05-25 | Boe Technology Group Co., Ltd. | Quantum dot light-emitting device and manufacturing method thereof |
| TR2021009259A1 (en) * | 2021-06-04 | 2022-09-21 | Ihsan Dogramaci Bilkent Ueniversitesi | A method for selectively patterning quantum dots in the fabrication of optical devices. |
| CN113903874B (en) * | 2021-09-22 | 2024-04-26 | 北京京东方技术开发有限公司 | Method for preparing QLED device, QLED device and display device |
| CN116323861A (en) * | 2021-10-20 | 2023-06-23 | 京东方科技集团股份有限公司 | Quantum dot material, patterning method of quantum dot film layer and quantum dot display device |
| WO2023122999A1 (en) * | 2021-12-28 | 2023-07-06 | 京东方科技集团股份有限公司 | Light-emitting device and preparation method thereof, display panel and display device |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101038436A (en) * | 2006-03-14 | 2007-09-19 | 佳能株式会社 | Photosensitive silane coupling agent, method of forming pattern, and method of fabricating device |
| CN101038439A (en) * | 2006-03-14 | 2007-09-19 | 佳能株式会社 | Photosensitive silane coupling agent, method of modifying surface, method of forming pattern, and method of fabricating device |
| CN102064102A (en) * | 2004-06-08 | 2011-05-18 | 奈米系统股份有限公司 | Methods and devices for forming nanostructure monolayers and devices including such monolayers |
| JP2012109323A (en) * | 2010-11-16 | 2012-06-07 | Alps Electric Co Ltd | Method for forming pattern of film |
| CN107799672A (en) * | 2017-10-30 | 2018-03-13 | 京东方科技集团股份有限公司 | The method of quantum dot layer patterning, quantum dot light emitting device and preparation method thereof |
| CN110137387A (en) * | 2019-05-16 | 2019-08-16 | 京东方科技集团股份有限公司 | The patterned method of nanoparticle layers, quantum dot light emitting device and display device |
| CN110289363A (en) * | 2019-06-28 | 2019-09-27 | 京东方科技集团股份有限公司 | The patterned method of nanoparticle layers, quantum dot light emitting device and display device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040203256A1 (en) * | 2003-04-08 | 2004-10-14 | Seagate Technology Llc | Irradiation-assisted immobilization and patterning of nanostructured materials on substrates for device fabrication |
-
2020
- 2020-07-09 CN CN202010657241.9A patent/CN111769200B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102064102A (en) * | 2004-06-08 | 2011-05-18 | 奈米系统股份有限公司 | Methods and devices for forming nanostructure monolayers and devices including such monolayers |
| CN101038436A (en) * | 2006-03-14 | 2007-09-19 | 佳能株式会社 | Photosensitive silane coupling agent, method of forming pattern, and method of fabricating device |
| CN101038439A (en) * | 2006-03-14 | 2007-09-19 | 佳能株式会社 | Photosensitive silane coupling agent, method of modifying surface, method of forming pattern, and method of fabricating device |
| JP2012109323A (en) * | 2010-11-16 | 2012-06-07 | Alps Electric Co Ltd | Method for forming pattern of film |
| CN107799672A (en) * | 2017-10-30 | 2018-03-13 | 京东方科技集团股份有限公司 | The method of quantum dot layer patterning, quantum dot light emitting device and preparation method thereof |
| CN110137387A (en) * | 2019-05-16 | 2019-08-16 | 京东方科技集团股份有限公司 | The patterned method of nanoparticle layers, quantum dot light emitting device and display device |
| CN110289363A (en) * | 2019-06-28 | 2019-09-27 | 京东方科技集团股份有限公司 | The patterned method of nanoparticle layers, quantum dot light emitting device and display device |
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