CN111725690A - Device for rapidly tuning wide-range frequency of narrow-linewidth laser - Google Patents

Device for rapidly tuning wide-range frequency of narrow-linewidth laser Download PDF

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CN111725690A
CN111725690A CN202010485576.7A CN202010485576A CN111725690A CN 111725690 A CN111725690 A CN 111725690A CN 202010485576 A CN202010485576 A CN 202010485576A CN 111725690 A CN111725690 A CN 111725690A
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laser
narrow
frequency
optical fiber
linewidth
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CN111725690B (en
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梁虹
魏芳
孙延光
皮浩洋
蔡海文
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Shanghai Institute of Optics and Fine Mechanics of CAS
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06Construction or shape of active medium
    • H01S3/063Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067Fibre lasers
    • H01S3/06708Constructional details of the fibre, e.g. compositions, cross-section, shape or tapering
    • H01S3/06712Polarising fibre; Polariser
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/10084Frequency control by seeding
    • H01S3/10092Coherent seed, e.g. injection locking

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

A device for rapidly tuning a narrow linewidth laser in a large-range frequency mode comprises a narrow linewidth optical fiber laser, a polarization maintaining optical fiber isolator, a first polarization maintaining optical fiber circulator, a gain switch laser, a second polarization maintaining optical fiber circulator, a distributed feedback type semiconductor laser, a low-noise digital signal generator, a voltage-controlled oscillator, a microwave amplifier, a first current driving controller, a first temperature controller, a second current driving controller and a second temperature controller. The invention combines the characteristic of narrow line width of the optical fiber laser and the function of high-order sideband and four-wave mixing effect spread spectrum, reduces the requirement on a microwave driving source, solves the problem that the narrow line width and the rapid frequency modulation capability in the frequency tuning of the common laser are mutually restricted, and realizes the rapid tuning of the wide-range frequency of the narrow-line width laser.

Description

Device for rapidly tuning wide-range frequency of narrow-linewidth laser
Technical Field
The invention belongs to a narrow linewidth laser large-range frequency fast tuning technology, and particularly relates to a narrow linewidth laser large-range frequency fast tuning device based on an injection locking technology and a four-wave mixing effect.
Background
The laser light source with the narrow line width and large-range rapid frequency modulation capability is widely applied to the advanced basic subjects and high-tech fields of frequency modulation continuous wave laser radar, optical frequency domain imaging, hyperfine spectral structure analysis of atomic/molecular physics and the like. In order to generate a laser light source with a narrow line width and a large-range fast frequency modulation capability, a lot of work is done, and the work can be largely divided into the following two main mechanisms: (1) and (3) intra-cavity tuning: the reconfiguration of the cavity structure is realized through mechanical, optical and electronic means, so that the aim of tuning the frequency of the output optical wave is fulfilled; (2) extra-cavity tuning: frequency tuning is achieved outside the laser cavity by means of an acoustic-optical modulator as well as an electro-optical modulator. For the intra-cavity tuning, the narrow linewidth and the fast frequency modulation capability are often restricted, while the fast tuning of the laser frequency can be realized by using the method of the extra-cavity tuning without sacrificing the linewidth of the laser, but the tuning range is often limited by the external microwave driving source and the bandwidth of the modulator. Therefore, how to obtain a laser light source with a narrow line width and a wide-range fast frequency modulation simultaneously attracts a great deal of attention.
The current laser frequency tuning schemes mainly include:
one of the prior proposals is to tune the laser frequency by using tunable frequency shift devices such as an acousto-optic modulator and an electro-optic modulator, and the fast frequency-modulated laser can be obtained by controlling the driving frequency of the acousto-optic/electro-optic modulator. Subject to the limitations of acousto-optic modulation crystals, acousto-optic modulators are commonly used in applications with a small tuning range, typically on the order of 10-100MHz [ j.bieshenvel, d.w.e.nom, e.j.salumbides, k.t.shear, w.ubachs, j.c.j.koelemej.widelreliable laser frequency with 30GHz range and 5THz offset.optics Express, vol.21,14008-14016,2013 ]; optical frequency tuning in the wide frequency range can be achieved by electro-optic modulators, which currently achieve 120GHz frequency tuning in 0.2s, but for electro-optic phase modulators and intensity modulators, high-order sidebands are generated to cause signal-to-noise ratio degradation, and theoretically, the conversion efficiency of the first-order sidebands can only reach 34% at most, and single-sideband modulators can effectively suppress other sideband components and only reserve the +1 or-1-order sidebands, but the conversion efficiency can only reach 58% at most in Theory, namely D.Y.Kubo, R.Srinivasan, H.Kiuchi, Chen Ming-Tang.development of a Mach-Zehnder Modulator photonic crystal source, microwave Theory and Technology, IEEE Transactions, 2004, 61,3005-3014,2013 cs T.Kawanitsushitsu, M.Iwatsu. linear Theory and Technology, and wavelength-1536, wavelength modulation, and wavelength.
The second of the prior schemes is to lock the slave laser to the high-order modulation sideband of the master laser modulated by the electro-optical modulator through an injection locking method, therefore, the narrow line width, high frequency stability and the like of the master laser can be completely copied to the slave laser, the output power is effectively improved, the frequency of the slave laser can be quickly and flexibly controlled by controlling the driving frequency of the electro-optical modulator, spread spectrum by using high-order sideband effect, reduce the requirement for microwave driving source, and realize the linear frequency modulation (Fang Wei, Bin Lu, Jian Wang, Dan Xu, Zhengqing Pan, Dijun Chen, Haiwen Cai, Ronghui Qu.precision and wideband frequency modulation-position injection-locking. optics Express, vol,23, 4970-shaped 4980, 2015) with the frequency modulation range of 15GHz and the frequency modulation rate of 2.5 THz/s; the tuning range of the laser source With narrow line width, large range and fast frequency modulation obtained by the High-order sideband injection locking Technology is further expanded by combining the four-wave mixing effect With the High-order sideband injection locking Technology, and the High-order sideband injection locking Technology is used as a nonlinear medium for generating the four-wave mixing effect, so that the tuning range of the laser source With narrow line width, large range and fast frequency modulation obtained by the High-order sideband injection locking Technology is further expanded, and the tuning range of the laser source With narrow line width, large range and fast frequency modulation obtained by the High-order sideband injection locking Technology is realized, namely, the tuning range of 100GHz modulation range is adopted, and Zuuan He.
The above schemes basically involve a plurality of optical/electrical devices and complex control circuits, require higher photoelectric technical support, and have high construction difficulty and high cost.
Disclosure of Invention
The invention aims to provide a device for realizing the wide-range frequency fast tuning of narrow-linewidth laser by utilizing the injection locking technology of a gain switch laser and the four-wave mixing effect, which can solve the problem of the restriction of the mutual restriction of the narrow linewidth and the fast frequency modulation capability in the frequency tuning of the common laser, can directly drive the gain switch laser to generate sideband signals by utilizing microwave signals with the narrow-range tuning, and can realize the wide-range frequency fast tuning of the narrow-linewidth laser by combining the injection locking technology and the four-wave mixing effect.
The core idea of the invention is as follows: the gain switch laser is enabled to work in a state that the laser gain is higher than and lower than the laser lasing threshold value alternatively by utilizing the direct modulation of the microwave signal, to generate sideband signal, the emergent laser of the narrow linewidth fiber laser can realize injection locking to the gain switch laser by the frequency near any sideband, meanwhile, the laser emitted by the narrow linewidth fiber laser is used as the signal light of the four-wave mixing effect, the four-wave mixing effect is carried out on the injection-locked sideband signal in a gain medium of a gain switch laser to obtain a higher-order sideband signal, the laser carrying the higher-order narrow linewidth sideband signal is injected into a distributed feedback type semiconductor laser to be injected and locked, large-frequency-difference frequency-shift laser output with high side mode rejection ratio is generated, and the quick tuning of the wide-range narrow linewidth laser frequency can be realized by using a low-frequency adjustable microwave signal in combination with a current pre-compensation technology.
The technical solution of the invention is as follows:
a device for rapidly tuning wide-range frequency of narrow-linewidth laser is characterized in that: the device comprises a narrow-linewidth optical fiber laser, a polarization-maintaining optical fiber isolator, a first polarization-maintaining optical fiber circulator, a gain switch laser, a second polarization-maintaining optical fiber circulator, a distributed feedback type semiconductor laser, a low-noise digital signal generator, a voltage-controlled oscillator, a microwave amplifier, a first current driving controller, a first temperature controller, a second current driving controller and a second temperature controller;
the low-noise digital signal generator is respectively connected with control ports of the voltage-controlled oscillator, the first current drive controller and the second current drive controller, a microwave signal output by the voltage-controlled oscillator is connected with a microwave signal input end of the gain switch laser after passing through a microwave amplifier, the first current drive controller and the first temperature controller are respectively connected with a bias current and a temperature control end of the gain switch laser, and the second current drive controller and the second temperature controller are respectively connected with a current and a temperature control end of the distributed feedback semiconductor laser;
the gain switch laser generates a series of sideband signals with the interval of microwave signal frequency under the direct modulation of microwave signals, the narrow linewidth fiber laser is used as a main laser, the main laser passes through a polarization maintaining fiber isolator and a first polarization maintaining fiber circulator in the transmission direction of output light of the main laser and then is injected into the gain switch laser directly modulated by the microwave signals, and a first current driving controller and a first temperature controller are adjusted to enable-n-order sideband signals generated by the gain switch laser to be locked on the narrow linewidth fiber laser to obtain sideband signals with the narrowed linewidth; due to the existence of the nonlinear gain medium in the gain switch laser, a four-wave mixing effect can be generated while injection locking is carried out, a higher-order sideband signal is obtained, the laser carrying the higher-order narrow-linewidth sideband signal is injected into the distributed feedback type semiconductor laser after passing through the second polarization-maintaining optical fiber circulator, and the light output by the distributed feedback type semiconductor laser after injection locking is output as large-range fast frequency modulation laser.
The gain chip in the gain switching laser provides a nonlinear medium for four-wave mixing effect.
The device utilizes microwave signals to directly modulate a gain switch laser to generate sideband signals, a narrow linewidth fiber laser is used as injection locking main laser to perform injection locking on the sideband signals generated by the gain switch laser, and is also used as signal light of a four-wave mixing effect and the sideband signals which are injected and locked to generate the four-wave mixing effect in a gain medium of the gain switch laser to generate higher-order sideband signals, a distributed feedback type semiconductor laser can be injected and locked on the higher-order sideband signals generated by the four-wave mixing effect, the microwave signal frequency of the gain switch laser is tuned at the moment, and meanwhile, the driving currents of the gain switch laser and the distributed feedback type semiconductor laser are pre-compensated according to the frequency variation of the microwave signals, so that the large-range rapid frequency modulation of the narrow linewidth laser can be realized.
The invention has the characteristics and advantages that:
the narrow-linewidth fiber laser can be used as a signal light and the sideband signal after injection locking to generate a four-wave mixing effect in a gain medium of the gain switch laser, further expands the order of the sideband signal and is beneficial to realizing the injection locking of a higher-order sideband, and the two are combined together to ensure that the whole system has the advantages of low cost, simple realization and large frequency-adjustable range.
Drawings
Fig. 1 is a schematic diagram of the general structure of a narrow linewidth laser wide-range frequency fast tuning device in the present invention.
Detailed Description
The present invention will be described in detail with reference to the attached drawings, but the scope of the present invention should not be limited thereto.
Referring to fig. 1, it can be seen from the figure that the laser emitted from the narrow-linewidth fiber laser according to the present invention can realize injection locking of the gain switch laser by approaching the frequency of the sideband signal generated by any gain switch laser, so as to obtain the sideband signal with all linewidths being narrowed, and because of the existence of the nonlinear gain medium in the gain switch laser, a four-wave mixing effect occurs while injection locking is performed, so as to obtain a higher-order sideband signal, the distributed feedback type semiconductor laser is locked on the higher-order sideband signal to improve the side mode rejection ratio and the output power of the frequency modulated laser, and the frequency of the sideband signal is changed by changing the frequency of the microwave signal of the gain switch laser, so as to tune the frequency of the distributed feedback type semiconductor laser after injection locking.
The working principle of the device of the invention is as follows:
the first and the second gain switch lasers 4 are driven by the superposition of two parts of current, one part is bias current provided by the first current drive controller 10, and the other part is frequency omega output by the voltage-controlled oscillator 8 and the microwave amplifier 9mThe microwave signal of (a) provides a sinusoidally modulated current. The gain switching laser alternately works in the state that the laser gain is higher than and lower than the laser lasing threshold under the direct modulation of the microwave signal, and the main frequency omega of the gain switching laserSGenerates a series of rows with a spacing omegamThe sideband signal of (a);
secondly, the narrow linewidth optical fiber laser 1 is used as a main laser, and the output frequency is omegaLThe narrow linewidth single-frequency laser passes through a polarization maintaining fiber isolator 2 and a first polarization maintaining fiber circulator 3 in the transmission direction of output light and then is injected into a gain switch laser 4 directly modulated by microwave signals, a first current driving controller 10 and a first temperature controller 11 are respectively connected with the current and temperature control ends of the gain switch laser 4, and the current and the temperature of the gain switch laser 4 are adjusted to enable-n-order sideband signals generated by the gain switch laser 4 to be locked on the narrow linewidth fiber laser; and because of the existence of the nonlinear gain medium in the gain switch laser 4, the four-wave mixing effect can be generated while the injection locking is carried out, a sideband signal of higher order can be obtained, the laser carrying the sideband signal of higher order is injected into the distributed feedback type semiconductor laser 6 after passing through the second polarization-maintaining optical fiber circulator 5, the second current drive controller 12 and the second temperature controller 13 are respectively connected with the current and temperature control ends of the distributed feedback type semiconductor laser 6, the temperature and the current of the distributed feedback type semiconductor laser 6 are adjusted to be locked on a sideband signal of + n order generated after the injection locking technology and the four-wave mixing effect of the gain switch laser 4, and the sideband signal with high side mode rejection ratio and the optical fiber laser are outputThe single-frequency laser signal with a large frequency difference range is output through a 3-port of the second polarization-maintaining optical fiber circulator 5;
thirdly, the output voltage of the low-noise digital signal generator 7 is changed, and the frequency of the output microwave signal of the voltage-controlled oscillator 8 is changed into omegam+ Δ ω, the sideband signal generated by the modulation and four-wave mixing effect will change accordingly, the change amount of the main frequency of the laser output by the gain switch laser (4) is n Δ ω, and the change amount of the main frequency of the laser output by the distributed feedback semiconductor laser 6 is 2n Δ ω, so as to avoid losing lock, the low-noise digital signal generator 7 is used to perform synchronous compensation on the first current driving controller 10 and the second current driving controller 12, so that the gain switch laser 4 and the distributed feedback semiconductor laser 6 are always in the injection locking state, and the laser output by the distributed feedback semiconductor laser 6 is a narrow linewidth laser with large-range fast tuning capability.
The frequency modulation device comprises the following specific steps:
1. opening the narrow-linewidth optical fiber laser 1, adjusting laser parameters to enable the laser to work under the optimal parameters, enabling the output power to meet the output requirement, connecting the laser to the input end of the polarization maintaining optical fiber isolator 2, measuring the spectrum and the optical power at the output end of the polarization maintaining optical fiber isolator 2, and determining the position of the optical power without excessive loss and central wavelength;
2. the first current driving controller 10, the first temperature controller 11, the low-noise digital signal generator 7, the voltage-controlled oscillator 8 and the microwave amplifier 9 are turned on, the output of the low-noise digital signal generator 7 is enabled to be zero, the voltage-controlled oscillator 8 works at the lowest output microwave frequency, the gain switch laser 4 is driven, and the spectrum condition after modulation is observed at the output end of the gain switch laser 4 by using a spectrometer; the output end of the polarization maintaining fiber isolator 2 is sequentially connected with the port 1 of the first polarization maintaining fiber circulator 3, the port 2 of the first polarization maintaining fiber circulator 3 and the gain switch laser 4, the temperature and the current of the gain switch laser 4 are adjusted to enable a-n-order sideband generated by the gain switch laser 4 to be locked on the optical fiber laser, and observation is carried out through the port 3 of the first polarization maintaining fiber circulator 3; changing the output voltage of the low-noise digital signal generator 7 into a triangular wave signal, enabling the microwave signal output by the voltage-controlled oscillator 8 to perform tuning similar to triangular wave, enabling the output end of the low-noise digital signal generator 7 to be connected with the external modulation end of the first current driving controller 10, adjusting the voltage modulation coefficient of the first current driving controller 10, and enabling a-n-order sideband generated by the gain switch laser 4 to be injected and locked on the optical fiber laser all the time in the whole triangular wave tuning process;
3. connecting the 3 port of the first polarization maintaining fiber circulator 3 with the 1 port of the second polarization maintaining fiber circulator 5, the 2 port of the second polarization maintaining fiber circulator 5 and the distributed feedback type semiconductor laser 6 in sequence, closing the triangular wave output mode of the low noise digital signal generator 7, opening the second current driving controller 12 and the second temperature controller 13, adjusting the current and the temperature of the distributed feedback type semiconductor laser 6 to lock the distributed feedback type semiconductor laser on the + n-order sideband of a high-quality sideband signal generated by the gain switch laser 4 after injection locking technology and four-wave mixing effect, and observing the signal through the 3 port of the second polarization maintaining fiber circulator 5; turning on a triangular wave signal output mode of the low-noise digital signal generator 7, performing approximate triangular wave tuning on a microwave signal output by the voltage-controlled oscillator 8, connecting the output end of the low-noise digital signal generator 7 with the external modulation end of the second current drive controller 12, and adjusting the voltage modulation coefficient of the second current drive controller 12 to enable the distributed feedback semiconductor laser 6 to keep an injection locking state in the whole triangular wave tuning process; thus, the gain switch laser and the distributed feedback type semiconductor laser are kept in an injection locking state in the whole tuning process, and the output light of the distributed feedback type semiconductor laser is narrow linewidth laser with large-range frequency fast tuning.
The technical scheme can realize the narrow linewidth laser large-range frequency quick tuning device which is low in cost and simple in circuit control, and can be suitable for the fields of coherent laser detection, synthetic aperture radar and the like. While the invention has been described in detail and with reference to specific embodiments thereof, it will be understood that the invention is not limited to the disclosed embodiments and examples, but is capable of various modifications in form and detail as would be apparent to those skilled in the art. For example, the form of the fiber laser can be replaced by other narrow-linewidth single-frequency lasers, and the working wave bands of the gain switch laser and the distributed feedback type semiconductor laser can be replaced by other wave bands. It should be understood that the above-mentioned embodiments are merely exemplary of the present invention, and are not intended to limit the present invention, and any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (3)

1. A device for rapidly tuning wide-range frequency of narrow-linewidth laser is characterized in that: the device comprises a narrow-linewidth optical fiber laser (1), a polarization maintaining optical fiber isolator (2), a first polarization maintaining optical fiber circulator (3), a gain switch laser (4), a second polarization maintaining optical fiber circulator (5), a distributed feedback type semiconductor laser (6), a low-noise digital signal generator (7), a voltage-controlled oscillator (8), a microwave amplifier (9), a first current driving controller (10), a first temperature controller (11), a second current driving controller (12) and a second temperature controller (13);
the low-noise digital signal generator (7) is respectively connected with control ports of a voltage-controlled oscillator (8), a first current drive controller (10) and a second current drive controller (12), a microwave signal output by the voltage-controlled oscillator (8) is connected with a microwave signal input end of a gain switch laser (4) after passing through a microwave amplifier (9), the first current drive controller (10) and a first temperature controller (11) are respectively connected with a bias current and a temperature control end of the gain switch laser (4), and the second current drive controller (12) and a second temperature controller (13) are respectively connected with a current and a temperature control end of the distributed feedback semiconductor laser (6);
the gain switch laser (4) generates a series of sideband signals with the interval of microwave signal frequency under the direct modulation of microwave signals, the narrow linewidth fiber laser (1) is used as a main laser, the main laser passes through a polarization maintaining fiber isolator (2) and a first polarization maintaining fiber circulator (3) in the transmission direction of output light of the main laser and is injected into the gain switch laser (4) directly modulated by the microwave signals, and a first current driving controller (10) and a first temperature controller (11) are adjusted to lock-n-order sideband signals generated by the gain switch laser (4) on the narrow linewidth fiber laser (1) so as to obtain the sideband signals with the narrowed linewidth; due to the existence of a nonlinear gain medium in the gain switch laser (4), a four-wave mixing effect can be generated while injection locking is carried out, a higher-order sideband signal is obtained, the laser carrying the higher-order narrow-linewidth sideband signal is injected into the distributed feedback type semiconductor laser (6) after passing through the second polarization-maintaining optical fiber circulator (5), and the light output by the distributed feedback type semiconductor laser (6) after injection locking is output as large-range fast frequency modulation laser.
2. The apparatus for wide-range frequency fast tuning of narrow-linewidth laser according to claim 1, wherein the gain chip in the gain-switched laser (4) provides a non-linear medium for four-wave mixing effect.
3. The apparatus according to claim 1, wherein the narrow linewidth fiber laser (1) is used as an injection-locked master laser for injection-locking a sideband signal generated by the gain-switched laser (4), and is used as a four-wave mixing effect signal light for generating a higher-order sideband signal to provide injection light for the distributed feedback semiconductor laser (6) and the four-wave mixing effect signal light and the injection-locked sideband signal.
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