CN111640641B - Semiconductor process chamber and semiconductor process equipment - Google Patents
Semiconductor process chamber and semiconductor process equipment Download PDFInfo
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- CN111640641B CN111640641B CN202010484710.1A CN202010484710A CN111640641B CN 111640641 B CN111640641 B CN 111640641B CN 202010484710 A CN202010484710 A CN 202010484710A CN 111640641 B CN111640641 B CN 111640641B
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- 238000000034 method Methods 0.000 title claims abstract description 64
- 239000004065 semiconductor Substances 0.000 title claims abstract description 52
- 230000006835 compression Effects 0.000 claims description 9
- 238000007906 compression Methods 0.000 claims description 9
- 230000007423 decrease Effects 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 5
- 230000003749 cleanliness Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000001125 extrusion Methods 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/32119—Windows
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- Plasma & Fusion (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention provides a semiconductor process chamber and semiconductor process equipment, which comprises a chamber body, a dielectric window and a uniform flow plate, wherein the dielectric window is arranged at the top of the chamber body and is connected with the chamber body, an air inlet is arranged in the dielectric window, the size of the uniform flow plate is smaller than that of the dielectric window, and the uniform flow plate is arranged on one surface of the dielectric window facing the chamber body through an insulating connecting piece and covers the air inlet. The semiconductor process chamber and the semiconductor process equipment provided by the invention can improve the flexibility of fixing the uniform flow plate, thereby improving the process result and reducing the processing cost and the processing difficulty of the uniform flow plate.
Description
Technical Field
The invention relates to the technical field of semiconductor equipment, in particular to a semiconductor process chamber and semiconductor process equipment.
Background
At present, in the problem of fixing a uniform flow plate in a chamber, due to the severe radio frequency condition in an inductively coupled plasma (Inductively Coupled Plasma, ICP) etching mechanism chamber and the severe cleanliness requirement in a processing technology, the top of the peripheral wall of the chamber is generally arranged to be in a step shape, a step-shaped supporting block with a matched shape is arranged on the step at the top of the peripheral wall, a dielectric window provided with an air inlet is placed on the top end surface of the supporting block, and a uniform flow plate is placed on the step of the supporting block so as to support the dielectric window and the uniform flow plate through the peripheral wall of the chamber and the supporting block, and the uniform flow plate is positioned below the dielectric window, so that the uniform flow hole on the uniform flow plate is positioned below the air inlet.
However, in the method of supporting the flow-homogenizing plate by the chamber peripheral wall and the supporting block, since the flow-homogenizing plate is mounted on the supporting block located at the top of the chamber peripheral wall, the diameter of the flow-homogenizing plate needs to be larger than the inner diameter of the chamber peripheral wall, so that the diameter of the gap area between the flow-homogenizing plate and the dielectric window is larger than the inner diameter of the chamber peripheral wall, and the gap area with the excessively large diameter causes a large accumulation of process gas entering from the gas inlet in the gap area, thereby increasing the burden of the vacuumizing device, affecting the pressure control capability and further affecting the process result. In addition, as the step-shaped supporting blocks and the uniform flow plates are sequentially arranged on the steps of the peripheral wall of the cavity, the machining errors of the uniform flow plates, the steps of the peripheral wall of the cavity and the steps of the supporting blocks can influence the size of the gap area, and the gap area between the uniform flow plates and the dielectric window is difficult to control, so that the process result is influenced. And because the air inlet on the dielectric window is usually only positioned in the central area of the dielectric window, and the flow homogenizing holes on the flow homogenizing plate are also only positioned in the central area of the corresponding air inlet on the flow homogenizing plate, the waste of raw materials is caused, the material cost is increased, and the processing difficulty is increased.
Disclosure of Invention
The invention aims at solving at least one of the technical problems in the prior art, and provides a semiconductor process chamber and semiconductor process equipment, which can improve the flexibility of fixing a uniform flow plate, thereby improving the process result and reducing the processing cost and the processing difficulty of the uniform flow plate.
The invention provides a semiconductor process chamber for achieving the purpose, which comprises a chamber body, a dielectric window and a uniform flow plate, wherein the dielectric window is arranged at the top of the chamber body and is connected with the chamber body, an air inlet is arranged in the dielectric window, the size of the uniform flow plate is smaller than that of the dielectric window, and the uniform flow plate is arranged on one surface of the dielectric window facing the chamber body through an insulating connecting piece and covers the air inlet.
Optionally, an annular boss is arranged on the upper surface of the uniform flow plate, the annular boss surrounds the air inlet, the upper end surface of the annular boss is attached to the lower surface of the dielectric window, and a through hole penetrating through the uniform flow plate and the annular boss is arranged at the annular boss;
a clamping groove structure is arranged at the position where the lower surface of the dielectric window is attached to the upper end surface of the annular boss; one end of the insulating connecting piece is provided with a clamping part, and one end of the insulating connecting piece, which is provided with the clamping part, passes through the through hole and is clamped with the clamping groove structure.
Optionally, the insulating connecting piece comprises a rod-shaped main body, one end of the rod-shaped main body is provided with the clamping part, and the other end of the rod-shaped main body is provided with a rotating head;
the clamping groove structure is set as: enabling the clamping part to move in or out of the clamping groove structure at a first preset angle; when the clamping part rotates from the first preset angle to the second preset angle, the clamping groove structure is clamped with the clamping part.
Optionally, the clamping groove structure comprises a groove arranged on the lower surface of the dielectric window and a positioning groove arranged on the side wall of the groove; the clamping part can move in or out of the groove at the first preset angle; when the clamping part rotates from the first preset angle to the second preset angle, the clamping part is clamped into the positioning groove.
Optionally, the groove is annular, and the positioning grooves are multiple and are arranged at intervals along the circumferential direction of the annular groove; and the number of the insulating connecting pieces is the same as that of the positioning grooves, and the insulating connecting pieces are arranged in a one-to-one correspondence manner.
Optionally, ramps extending towards the positioning grooves are arranged on opposite side walls of the grooves, and the depth of the ramps gradually decreases from the side walls of the grooves to the positioning grooves;
in the process that the clamping part rotates from the first preset angle to the second preset angle, the clamping part moves into the positioning groove along the ramp in a rotating way;
the clamping portion is a flexible member and is configured to undergo compression deformation when in the ramp.
Optionally, the joint portion includes main part and follows the radial bulge that sets up of main part, main part is used for driving bulge is rotatory, bulge be used for with draw-in groove structure joint.
Optionally, the shape of the through hole is matched with the shape of the clamping part.
Optionally, the radial dimension of the rotating head is greater than the radial dimension of the rod-shaped main body, and after the clamping part is clamped with the clamping groove structure, the rotating head abuts against the uniform flow plate.
The invention also provides semiconductor process equipment comprising the semiconductor process chamber.
The invention has the following beneficial effects:
according to the semiconductor process chamber provided by the invention, the flow homogenizing plate is arranged on one surface of the dielectric window facing the chamber body by the insulating connecting piece, so that the mode of fixing the flow homogenizing plate in the chamber body is not limited to the mode of supporting through the peripheral wall of the chamber body, but can be fixed in the chamber body by the mode of connecting the flow homogenizing plate with the dielectric window, and the flexibility of fixing the flow homogenizing plate can be improved. Because the uniform flow plate is arranged on the dielectric window through the insulating connecting piece, metal pollutants which pollute the semiconductor processing technology are not generated, and the requirement of the semiconductor processing technology on the cleanliness can be ensured. The dielectric window can be fixed in the chamber body in a mode of being connected with the dielectric window, so that the size of the uniform flow plate can be reduced, the size of the uniform flow plate can be smaller than that of the dielectric window, the size of a gap area between the uniform flow plate and the dielectric window is reduced, the accumulation amount of process gas in the gap area is reduced, the burden of a vacuumizing device is reduced, the pressure control capability is improved, the size of the gap area is only influenced by the abutting surface of the uniform flow plate and the dielectric window, the size of the gap area is controlled conveniently, and the process result can be improved. And the size of the uniform flow plate can be reduced, so that the processing cost and the processing difficulty of the uniform flow plate can be reduced.
The semiconductor process equipment provided by the invention can improve the flexibility of fixing the uniform flow plate by means of the semiconductor process chamber provided by the invention, thereby improving the process result and reducing the processing cost and the processing difficulty of the uniform flow plate.
Drawings
Fig. 1 is a schematic structural diagram of a semiconductor process chamber according to an embodiment of the present invention;
fig. 2 is a schematic view of a partially enlarged structure of a semiconductor process chamber according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a structure of a clamping slot in a semiconductor process chamber according to an embodiment of the present invention;
FIG. 4 is a schematic view of a flow-homogenizing plate in a semiconductor process chamber according to an embodiment of the present invention;
FIG. 5 is a schematic cross-sectional view of the structure at A-A in FIG. 4;
fig. 6 is a schematic structural diagram of an insulating connector in a semiconductor process chamber according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of another embodiment of an insulating connector in a semiconductor processing chamber;
fig. 8 is a schematic top view of an insulating connector in a semiconductor process chamber according to an embodiment of the present invention;
fig. 9 is a schematic structural diagram of a dielectric window in a semiconductor process chamber according to an embodiment of the present invention;
FIG. 10 is a schematic cross-sectional view of the structure at A-A in FIG. 9;
FIG. 11 is a schematic cross-sectional view of the structure at B-B in FIG. 10;
FIG. 12 is an enlarged schematic view of the structure of FIG. 11E;
FIG. 13 is a schematic view of a partially enlarged structure of a semiconductor process chamber according to an embodiment of the present invention when a clamping portion is moved into a clamping groove structure;
fig. 14 is a schematic view of a partially enlarged structure of a clamping portion in a semiconductor process chamber according to an embodiment of the present invention when the clamping portion rotates in a clamping groove structure;
FIG. 15 is a schematic view of a partially enlarged structure of a semiconductor process chamber according to an embodiment of the present invention when a clamping portion is clamped with a clamping groove structure;
FIG. 16 is a schematic cross-sectional view of the structure at A-A in FIG. 13;
FIG. 17 is a schematic cross-sectional view of the structure at B-B in FIG. 13;
reference numerals illustrate:
11-a chamber body; 12-dielectric window; 121-an air inlet; 13-a uniform flow plate; 131-uniflow holes; 14-insulating connectors; 141-a rod-shaped body; 142-a clamping part; 1421-a body portion; 1422-projections; 143-a swivel; 15-an annular boss; 16-clamping groove structure; 161-grooves; 162-positioning groove; 163-ramp; 17-through holes; 171-a central aperture portion; 172-protruding hole portions.
Detailed Description
In order to enable those skilled in the art to better understand the technical scheme of the present invention, the following describes the semiconductor process chamber and the semiconductor process equipment provided by the present invention in detail with reference to the accompanying drawings.
As shown in fig. 1-2, the present embodiment provides a semiconductor process chamber, which includes a chamber body 11, a dielectric window 12, and a flow-homogenizing plate 13, wherein the dielectric window 12 is disposed at the top of the chamber body 11 and is connected with the chamber body 11, an air inlet 121 is disposed in the dielectric window 12, the size of the flow-homogenizing plate 13 is smaller than that of the dielectric window 12, and the flow-homogenizing plate 13 is mounted on a surface of the dielectric window 12 facing the chamber body 11 through an insulating connector 14 and covers the air inlet 121.
In the semiconductor process chamber provided in this embodiment, the insulating connector 14 is used to mount the flow-homogenizing plate 13 on the surface of the dielectric window 12 facing the chamber body 11, so that the mode of fixing the flow-homogenizing plate 13 in the chamber body 11 is not limited to the mode of supporting the peripheral wall of the chamber body 11, but can be fixed in the chamber body 11 by connecting with the dielectric window 12, thereby improving the fixing flexibility of the flow-homogenizing plate 13. Since the current homogenizing plate 13 is installed on the dielectric window 12 through the insulating connector 14, no metal contaminant is generated which contaminates the semiconductor processing process, thereby ensuring the requirement of the semiconductor processing process on the cleanliness. Since the dielectric window 12 can be fixed in the chamber body 11 by being connected with the dielectric window 12, the size of the flow homogenizing plate 13 can be reduced, the size of the flow homogenizing plate 13 can be smaller than that of the dielectric window 12, the size of a gap area between the flow homogenizing plate 13 and the dielectric window 12 can be reduced, the amount of process gas accumulated in the gap area can be reduced, the burden of a vacuumizing device can be reduced, the pressure control capability can be improved, and the size of the gap area can be influenced by the flow homogenizing plate 13 and the dielectric window 12 only, so that the size of the gap area can be controlled conveniently, and further, the process result can be improved. And since the size of the uniform flow plate 13 can be reduced, the processing cost and difficulty of the uniform flow plate 13 can be reduced.
In this embodiment, an annular boss 15 is disposed on the upper surface of the uniform flow plate 13, the annular boss 15 surrounds the air inlet 121, and the upper end surface of the annular boss 15 is attached to the lower surface of the dielectric window 12, as shown in fig. 5, a through hole 17 penetrating through the uniform flow plate 13 and the annular boss 15 is disposed at the annular boss 15; as shown in fig. 3, a clamping groove structure 16 is arranged at a position where the lower surface of the dielectric window 12 is attached to the upper end surface of the annular boss 15; one end of the insulating connecting piece 14 is provided with a clamping portion 142, and one end of the insulating connecting piece 14 provided with the clamping portion 142 passes through the through hole 17 and is clamped with the clamping groove structure 16.
When the flow homogenizing plate 13 is installed, one end of the insulating connecting piece 14 provided with the clamping part 142 penetrates through the through hole 17 penetrating through the flow homogenizing plate 13 and the annular boss 15, and one end of the insulating connecting piece 14 provided with the clamping part 142 is connected with the clamping groove structure 16, so that the upper end face of the annular boss 15 is attached to the lower surface of the dielectric window 12, and the installation of the flow homogenizing plate 13 and the dielectric window 12 is completed. After the completion of the installation of the flow-homogenizing plate 13, the space between the lower surface of the dielectric window 12, the inner peripheral wall of the annular boss 15, and the upper surface of the flow-homogenizing plate 13 constitutes a gap area between the dielectric window 12 and the flow-homogenizing plate 13. During semiconductor processing, process gas enters the gap region from the gas inlet 121 provided on the dielectric window 12 and then enters the chamber body 11 from the uniform flow holes 131 provided on the uniform flow plate 13.
As shown in fig. 6 to 8, in the present embodiment, the insulating connecting member 14 includes a rod-shaped body 141, one end of the rod-shaped body 141 is provided with a clamping portion 142, and the other end is provided with a rotating head 143; the card slot structure 16 is provided with: enabling the clamping portion 142 to move into or out of the card slot structure 16 at a first predetermined angle; when the clamping portion 142 rotates from the first preset angle to the second preset angle, the clamping groove structure 16 is clamped with the clamping portion 142.
When the flow homogenizing plate 13 is installed, the rotating head 143 arranged at the other end of the rod-shaped main body 141 can be held or clamped, the rod-shaped main body 141 and the clamping part 142 arranged at one end of the rod-shaped main body 141 are penetrated into the through hole 17, the clamping part 142 penetrates through the through hole 17, the clamping part 142 is rotated to a first preset angle, the clamping part 142 can move into the clamping groove structure 16, after the clamping part 142 moves into the clamping groove structure 16, the clamping part 142 is rotated from the first preset angle to a second preset angle by rotating 143 the rod-shaped main body 141, and the clamping part 142 is clamped with the clamping groove structure 16, so that the flow homogenizing plate 13 is connected with the medium window 12, and the installation of the flow homogenizing plate 13 is realized. When the flow-homogenizing plate 13 is detached, the rod-shaped main body 141 can be rotated by the rotating head 143, the clamping part 142 is rotated to a first preset angle from a second preset angle, the clamping part 142 can be moved out of the clamping groove structure 16, and after the clamping part 142 is moved out of the clamping groove structure 16, the flow-homogenizing plate 13 can be separated from the dielectric window 12, so that the detachment of the flow-homogenizing plate 13 is realized.
As shown in fig. 9 to 12, in the present embodiment, the card slot structure 16 includes a groove 161 provided on the lower surface of the dielectric window 12, and a positioning groove 162 provided on the side wall of the groove 161; wherein, the clamping portion 142 can move in or out of the groove 161 at a first preset angle; when the clamping portion 142 rotates from the first predetermined angle to the second predetermined angle, the clamping portion 142 is clamped into the positioning slot 162.
When the uniform flow plate 13 is required to be connected with the medium window 12, the clamping part 142 is rotated to a first preset angle, so that the clamping part 142 can be moved into the groove 161, after the clamping part 142 is moved into the groove 161, the clamping part 142 is rotated from the first preset angle to a second preset angle, in the process that the clamping part 142 is rotated from the first preset angle to the second preset angle, the clamping part 142 is gradually moved into the positioning groove 162, when the clamping part 142 is rotated to the second preset angle, the clamping part 142 is clamped into the positioning groove 162, and therefore the uniform flow plate 13 is connected with the medium window 12, when the uniform flow plate 13 is required to be separated from the medium window 12, the clamping part 142 clamped in the positioning groove 162 is rotated from the second preset angle to the first preset angle, in the process that the clamping part 142 is rotated from the second preset angle to the first preset angle, the clamping part 142 is gradually moved out of the positioning groove 162, and when the clamping part 142 is rotated to the first preset angle, the clamping part 142 is clamped into the positioning groove 162, the uniform flow plate 13 is separated from the medium window 12, and the uniform flow plate 13 is separated from the positioning groove 162.
In this embodiment, the groove 161 is annular, and the positioning grooves 162 are plural and are arranged at intervals along the circumferential direction of the annular groove 161; the number of the insulating connectors 14 is the same as that of the positioning grooves 162, and the insulating connectors are arranged in a one-to-one correspondence.
Specifically, by arranging the plurality of positioning grooves 162 at intervals along the circumferential direction of the annular groove 161 and the insulating connecting pieces 14 which are the same as the number of the positioning grooves 162 and are arranged in a one-to-one correspondence manner, the plurality of insulating connecting pieces 14 can fix the uniform flow plate 13 and the dielectric window 12 at a plurality of positions on the circumference of the uniform flow plate 13 and the dielectric window 12, so that the upper end face of the annular boss 15 of the uniform flow plate 13 is tightly attached to the lower surface of the dielectric window 12, and leakage of process gas from between the upper end face of the annular boss 15 and the lower surface of the dielectric window 12 is avoided, thereby improving the connection stability of the dielectric window 12. And through setting up recess 161 into annular, still can avoid still needing to set up a plurality of independent recesses 161 to reduce the processing angle degree of difficulty of recess 161, save the cost.
As shown in fig. 13 to 17, in the present embodiment, the ramp 163 extending toward the positioning groove 162 is provided on the opposite side wall of the groove 161, and the depth of the ramp 163 gradually decreases from the side wall of the groove 161 to the positioning groove 162; during the process of rotating the clamping part 142 from the first preset angle to the second preset angle, the clamping part is rotated into the positioning groove 162 along the ramp 163; the engagement portion 142 is a flexible member and is configured to undergo compression deformation when in the ramp 163.
Specifically, by setting the clamping portion 142 as a flexible member, the clamping portion 142 can be designed to be larger than the ramp 163 in size, so that the clamping portion 142 can be attached to the ramp 163 when moving into the groove 161 and moving to the end of the ramp 163 far away from the positioning groove 162, but compression deformation does not occur, and when the clamping portion 142 rotates from the first preset angle to the second preset angle and moves towards the direction close to the positioning groove 162, the depth of the ramp 163 gradually decreases from the side wall of the groove 161 to the positioning groove 162, so that the clamping portion 142 is subjected to compression deformation by the extrusion force of the ramp 163, and when the clamping portion 142 moves to the positioning groove 162 and rotates to the second preset angle, the extrusion force of the ramp 163 received by the clamping portion 142 disappears and moves into the positioning groove 162, so that the clamping of the clamping portion 142 and the positioning groove 162 is realized, and when the clamping portion 142 does not move into the positioning groove 162, the leveling plate 13 and the medium window 12 can be connected to each other by the compression deformation generated by the self, and the compression deformation force can be further increased in the positioning groove 162, and the stability of the compression deformation can be further improved after the clamping portion is subjected to the compression deformation by the extrusion force of the clamping portion 162. In addition, since the pressing force of the ramp 163 on the clamping portion 142 suddenly disappears when the clamping portion 142 moves into the positioning slot 162, it can be convenient to determine whether the clamping portion 142 moves into the positioning slot 162 completely, so as to improve the stability of clamping the clamping portion 142 into the positioning slot 162.
Preferably, the flexible member comprises an elastic rubber.
As shown in fig. 6-8, in the present embodiment, the clamping portion 142 includes a main body portion 1421 and a protrusion portion 1422 radially disposed along the main body portion 1421, where the main body portion 1421 is configured to drive the protrusion portion 1422 to rotate, and the protrusion portion 1422 is configured to be clamped with the clamping groove structure. Specifically, as shown in fig. 6 to 8, the main body portion 1421 is located at the middle of the locking portion 142, and is used for connecting with the rod-shaped main body 141, and the protruding portion 1422 protrudes outward in the radial direction of the main body portion 1421.
In the present embodiment, since the protruding portions 1422 of the engaging portion 142 have two and are disposed opposite to each other in the radial direction of the main body portion 1421, the positioning groove 162 is also two concave portions protruding opposite to the inner peripheral wall of the groove 161, which also makes the angle difference between the first preset angle and the second preset angle 90 °. However, in practical applications, the number of the clamping portions 142, the number of the positioning slots 162, and the angle difference between the first preset angle and the second preset angle are not limited thereto.
In the present embodiment, the shape of the through hole 17 matches the shape of the click portion 142. Therefore, the angle of the clamping part 142 can be positioned when the clamping part 142 is inserted into the through hole 17, and the clamping part 142 can be prevented from shaking randomly in the through hole 17, so that the clamping part 142 can be smoothly inserted into the groove 161. Specifically, as shown in fig. 4, the through hole 17 includes a center hole portion 171 that matches the shape of the main body portion 1421 of the click portion 142, and a protruding hole portion 172 that matches the shape of the protruding portion 1422 of the click portion 142, the protruding hole portion 172 protruding outward in the radial direction of the center hole portion 171.
In the present embodiment, the radial dimension of the rotating head 143 is greater than the radial dimension of the rod-shaped body 141, and after the clamping portion 142 is clamped with the clamping groove structure 16, the rotating head 142 abuts against the uniform flow plate 13. That is, after the engaging portion 142 is engaged with the positioning groove 162, the upper surface of the rotating head 143 can abut against the lower surface of the flow-homogenizing plate 13, and the rotating head 143 abuts against the flow-homogenizing plate to improve the connection stability between the flow-homogenizing plate 13 and the dielectric window 12.
As shown in fig. 4, in the present embodiment, the flow-homogenizing plate 13 is provided therein with a plurality of circles of flow-homogenizing structures having different diameters and surrounding each other at intervals, each circle of flow-homogenizing structures includes a plurality of flow-homogenizing holes 131 arranged at intervals along the circumferential direction of the flow-homogenizing plate 13, and the distance between the center of the through hole 17 and the center of the flow-homogenizing hole 131 in the flow-homogenizing structure having the largest diameter is 3mm to 7mm.
Specifically, the inner ring flow homogenizing structure and the outer ring flow homogenizing structure with smaller diameters are arranged on the flow homogenizing plate 13, the inner ring flow homogenizing structure and the outer ring flow homogenizing structure respectively comprise a plurality of flow homogenizing holes 131 which are arranged at intervals along the circumferential direction of the flow homogenizing plate 13, namely, the centers of the plurality of flow homogenizing holes 131 in each ring of flow homogenizing structures are positioned on the same circumference, the diameter of the circumference of the center of the plurality of flow homogenizing holes 131 of the inner ring flow homogenizing structure is smaller than the diameter of the circumference of the center of the plurality of flow homogenizing holes 131 of the outer ring flow homogenizing structure, the distance between the center of the through hole 17 and the center of the flow homogenizing holes 131 in the outer ring flow homogenizing structure is 3mm-7mm, namely, the distance between the center of the through hole 17 and the circumference of the center of the plurality of flow homogenizing holes 131 of the outer ring flow homogenizing structure is 3mm-7mm, so that the distance between the flow homogenizing holes 131 and the inner wall of the annular boss 15 is too close, the process gas cannot flow fully between the flow homogenizing plate 13 and the medium window 12, the distance between the flow homogenizing holes 131 and the inner wall of the annular boss 15 is reduced, the processing difficulty is reduced, and the processing cost of the flow homogenizing plate 13 is reduced.
Preferably, the distance between the center of the through hole 17 and the center of the uniform flow hole 131 in the uniform flow structure having the largest diameter is 5mm.
Preferably, the inner ring uniform flow structure includes 8 uniform flow holes 131, each uniform flow hole 131 has a diameter of 1mm, and a circumference of the inner ring uniform flow structure where the centers of the 8 uniform flow holes 131 are located has a diameter of 45mm.
Preferably, the outer ring uniform flow structure includes 16 uniform flow holes 131, each uniform flow hole 131 has a diameter of 1mm, and a circumference of the outer ring uniform flow structure where the centers of the 16 uniform flow holes 131 are located has a diameter of 90mm.
As another technical solution, the present embodiment further provides a semiconductor process apparatus, including the semiconductor process chamber provided in the present embodiment.
The semiconductor process equipment provided by the embodiment of the invention can improve the flexibility of fixing the uniform flow plate by means of the semiconductor process chamber, thereby improving the process result and reducing the processing cost and the processing difficulty of the uniform flow plate.
In summary, the semiconductor process chamber and the semiconductor process apparatus provided in the present embodiment can improve the flexibility of fixing the flow-homogenizing plate 13, thereby improving the process result and reducing the processing cost and the processing difficulty of the flow-homogenizing plate 13.
It is to be understood that the above embodiments are merely illustrative of the application of the principles of the present invention, but not in limitation thereof. Various modifications and improvements may be made by those skilled in the art without departing from the spirit and substance of the invention, and are also considered to be within the scope of the invention.
Claims (6)
1. The semiconductor process chamber comprises a chamber body, a dielectric window and a uniform flow plate, and is characterized in that the dielectric window is arranged at the top of the chamber body and is connected with the chamber body, an air inlet is arranged in the dielectric window, the size of the uniform flow plate is smaller than that of the dielectric window, and the uniform flow plate is arranged on one surface of the dielectric window, facing the chamber body, through an insulating connecting piece and covers the air inlet;
the upper surface of the uniform flow plate is provided with an annular boss, the annular boss surrounds the air inlet, the upper end surface of the annular boss is attached to the lower surface of the dielectric window, and the annular boss is provided with a through hole penetrating through the uniform flow plate and the annular boss;
a clamping groove structure is arranged at the position where the lower surface of the dielectric window is attached to the upper end surface of the annular boss; one end of the insulating connecting piece is provided with a clamping part, and one end of the insulating connecting piece provided with the clamping part passes through the through hole and is clamped with the clamping groove structure;
the insulating connecting piece comprises a rod-shaped main body, one end of the rod-shaped main body is provided with the clamping part, and the other end of the rod-shaped main body is provided with a rotating head;
the clamping groove structure is set as: enabling the clamping part to move in or out of the clamping groove structure at a first preset angle; when the clamping part rotates from the first preset angle to a second preset angle, the clamping groove structure is clamped with the clamping part;
the clamping groove structure comprises a groove arranged on the lower surface of the dielectric window and a positioning groove arranged on the side wall of the groove; the clamping part can move in or out of the groove at the first preset angle; when the clamping part rotates from the first preset angle to the second preset angle, the clamping part is clamped into the positioning groove;
a ramp extending towards the positioning groove is arranged on the opposite side wall of the groove, and the depth of the ramp gradually decreases from the side wall of the groove to the positioning groove;
in the process that the clamping part rotates from the first preset angle to the second preset angle, the clamping part moves into the positioning groove along the ramp in a rotating way;
the clamping portion is a flexible member and is configured to undergo compression deformation when in the ramp.
2. The semiconductor process chamber of claim 1, wherein the recess is annular, the plurality of positioning grooves are spaced apart along a circumferential direction of the annular recess; and the number of the insulating connecting pieces is the same as that of the positioning grooves, and the insulating connecting pieces are arranged in a one-to-one correspondence manner.
3. The semiconductor processing chamber of claim 2, wherein the clamping portion comprises a main body portion and a protruding portion disposed radially along the main body portion, the main body portion configured to rotate the protruding portion, the protruding portion configured to be clamped with the clamping groove structure.
4. A semiconductor process chamber according to claim 3, wherein the shape of the through hole matches the shape of the clamping portion.
5. The semiconductor processing chamber of claim 1, wherein the radial dimension of the swivel head is greater than the radial dimension of the rod-shaped body, and the swivel head abuts the flow uniformity plate after the clamping portion is clamped with the clamping groove structure.
6. A semiconductor processing apparatus comprising the semiconductor processing chamber of any of claims 1-5.
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| US6086677A (en) * | 1998-06-16 | 2000-07-11 | Applied Materials, Inc. | Dual gas faceplate for a showerhead in a semiconductor wafer processing system |
| US6461435B1 (en) * | 2000-06-22 | 2002-10-08 | Applied Materials, Inc. | Showerhead with reduced contact area |
| CN103069560A (en) * | 2010-07-30 | 2013-04-24 | 应用材料公司 | Apparatus for controlling the flow of a gas in a process chamber |
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| CN111640641A (en) | 2020-09-08 |
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