CN111629899A - Laminate, method for manufacturing laminate, and method for manufacturing electronic device - Google Patents
Laminate, method for manufacturing laminate, and method for manufacturing electronic device Download PDFInfo
- Publication number
- CN111629899A CN111629899A CN201980008601.8A CN201980008601A CN111629899A CN 111629899 A CN111629899 A CN 111629899A CN 201980008601 A CN201980008601 A CN 201980008601A CN 111629899 A CN111629899 A CN 111629899A
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- China
- Prior art keywords
- substrate
- resin layer
- silicone resin
- laminate
- silicone
- Prior art date
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- 238000000034 method Methods 0.000 title claims description 47
- 238000004519 manufacturing process Methods 0.000 title claims description 44
- 239000000758 substrate Substances 0.000 claims abstract description 232
- 229920002050 silicone resin Polymers 0.000 claims abstract description 182
- 229920001721 polyimide Polymers 0.000 claims abstract description 53
- 239000009719 polyimide resin Substances 0.000 claims abstract description 50
- 230000004888 barrier function Effects 0.000 claims abstract description 46
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 36
- 229920001296 polysiloxane Polymers 0.000 claims description 78
- 238000010438 heat treatment Methods 0.000 claims description 47
- 239000000203 mixture Substances 0.000 claims description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 36
- 229910052710 silicon Inorganic materials 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 26
- 239000011521 glass Substances 0.000 claims description 20
- 125000005386 organosiloxy group Chemical group 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 17
- 238000006482 condensation reaction Methods 0.000 claims description 15
- 239000002904 solvent Substances 0.000 claims description 13
- 238000010030 laminating Methods 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 10
- 229920005989 resin Polymers 0.000 claims description 10
- 239000011347 resin Substances 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 9
- 230000003301 hydrolyzing effect Effects 0.000 claims description 8
- 229920006136 organohydrogenpolysiloxane Polymers 0.000 claims description 6
- 238000000926 separation method Methods 0.000 claims description 6
- 230000003746 surface roughness Effects 0.000 claims description 6
- 229910010272 inorganic material Inorganic materials 0.000 claims description 3
- 239000011147 inorganic material Substances 0.000 claims description 3
- 239000002585 base Substances 0.000 description 73
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- 239000007789 gas Substances 0.000 description 33
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- RCNRJBWHLARWRP-UHFFFAOYSA-N ethenyl-[ethenyl(dimethyl)silyl]oxy-dimethylsilane;platinum Chemical compound [Pt].C=C[Si](C)(C)O[Si](C)(C)C=C RCNRJBWHLARWRP-UHFFFAOYSA-N 0.000 description 3
- 238000013007 heat curing Methods 0.000 description 3
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- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
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- 125000001309 chloro group Chemical group Cl* 0.000 description 2
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
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- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 2
- 125000001183 hydrocarbyl group Chemical group 0.000 description 2
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- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 2
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- XPGAWFIWCWKDDL-UHFFFAOYSA-N propan-1-olate;zirconium(4+) Chemical compound [Zr+4].CCC[O-].CCC[O-].CCC[O-].CCC[O-] XPGAWFIWCWKDDL-UHFFFAOYSA-N 0.000 description 2
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- 125000000094 2-phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 1
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- 229920000642 polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- USGIERNETOEMNR-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO.CCCO USGIERNETOEMNR-UHFFFAOYSA-N 0.000 description 1
- OGHBATFHNDZKSO-UHFFFAOYSA-N propan-2-olate Chemical compound CC(C)[O-] OGHBATFHNDZKSO-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052713 technetium Inorganic materials 0.000 description 1
- GKLVYJBZJHMRIY-UHFFFAOYSA-N technetium atom Chemical compound [Tc] GKLVYJBZJHMRIY-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- NKLYMYLJOXIVFB-UHFFFAOYSA-N triethoxymethylsilane Chemical compound CCOC([SiH3])(OCC)OCC NKLYMYLJOXIVFB-UHFFFAOYSA-N 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 125000005023 xylyl group Chemical group 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
- B32B27/283—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polysiloxanes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
- B32B27/281—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/34—Layered products comprising a layer of synthetic resin comprising polyamides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/06—Interconnection of layers permitting easy separation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B9/045—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
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- Organic Chemistry (AREA)
- Laminated Bodies (AREA)
Abstract
The present invention provides a laminate comprising a support base having a hydroxyl group on the surface thereof, a silicone resin layer having a hydroxyl group, and a substrate in this order, wherein the substrate is a polyimide resin substrate or a laminate comprising at least 1 layer each of a polyimide resin substrate and a gas barrier film, and the peel strength between the silicone resin layer and the substrate is greater than the peel strength between the support base and the silicone resin layer, and adhesion of the silicone resin layer to the substrate can be suppressed when the substrate is peeled from the silicone resin layer and the support base.
Description
Technical Field
The invention relates to a laminate, a method for manufacturing the laminate, and a method for manufacturing an electronic device.
Background
Electronic devices such as solar cells (PV), liquid crystal panels (LCD), organic EL panels (OLED), and reception sensor panels for sensing electromagnetic waves, X-rays, ultraviolet rays, visible light, infrared rays, and the like have been increasingly made thinner and lighter. Along with this, the thickness of substrates such as polyimide resin substrates used in electronic devices has been becoming thinner. If the strength of the substrate is insufficient due to thinning, the handling property of the substrate is lowered, and a problem may occur in a step of forming a component for an electronic device on the substrate (component forming step).
Therefore, recently, in order to improve the handling property of the substrate, a technique of using a laminate having a support base, a predetermined silicone resin layer, and a substrate in this order has been proposed (patent document 1). In this case, first, a predetermined silicone resin layer is formed on the support base, and then the substrates are laminated to obtain a laminate. Next, the electronic device component is formed on the substrate of the laminate, and then the substrate (substrate with component) on which the electronic device component is formed is separated from the silicone resin layer and the support base material.
Documents of the prior art
Patent document
Patent document 1 Japanese laid-open patent publication No. 2015-
Disclosure of Invention
The peeling strength of each interface of the support base material, the silicone resin layer, and the substrate of the laminate in patent document 1 is not controlled.
The present inventors have conducted studies and found that when a substrate (substrate with a member) is peeled from a silicone resin layer and a support base after a heat treatment in the production process of an electronic device, a part or all of the silicone resin layer may be adhered to the substrate.
The present invention has been made in view of the above circumstances, and an object thereof is to provide a laminate which can suppress adhesion of a silicone resin layer to a substrate when the substrate is peeled from the silicone resin layer and a support base.
Further, the present invention aims to provide a method for producing the laminate and a method for producing an electronic device using the laminate.
The present inventors have conducted extensive studies and, as a result, have found that the above object can be achieved by the following constitution.
[1] A laminate comprising a support base having a hydroxyl group on the surface thereof, a silicone resin layer having a hydroxyl group, and a substrate in this order, wherein the substrate is a polyimide resin substrate or a laminate comprising at least 1 layer each of a polyimide resin substrate and a gas barrier film, and the peel strength between the silicone resin layer and the substrate is greater than the peel strength between the support base and the silicone resin layer.
[2] The laminate according to the above [1], wherein the support substrate is a glass plate or a silicon wafer.
[3] The laminate according to the above [1] or [2], wherein the substrate is the laminate substrate, and the gas barrier film of the laminate substrate is a gas barrier film made of an inorganic material.
[4] The laminate according to any one of the above [1] to [3], wherein a plurality of the substrates and the silicone resin layer are disposed on 1 of the support base materials.
[5]According to the above [1]～[4]The laminate according to any one of the preceding claims, wherein the difference in thermal expansion coefficient between the polyimide resin substrate and the support base material is 0 to 90 × 10-6/℃。
[6] The laminate according to any one of the above [1] to [5], wherein the thickness of the silicone resin layer is greater than 1 μm and 100 μm or less.
[7] The laminate according to any one of the above [1] to [6], wherein a peel strength between the silicone resin layer and the substrate is 0.3N/25mm or less.
[8] The laminate according to any one of the above [1] to [7], wherein the silicone resin constituting the silicone resin layer contains at least a trifunctional organosiloxy unit, and the proportion of the trifunctional organosiloxy unit is 20 to 90 mol% with respect to the total organosiloxy units.
[9] The laminate according to any one of the above [1] to [8], wherein a surface roughness Ra of the substrate-side surface of the silicone resin layer is 0.1 to 20 nm.
[10] The laminate according to any one of the above [1] to [9], wherein the laminate substrate having at least 1 layer each of a polyimide resin substrate and a gas barrier film is laminated in this order from a side close to the silicone resin layer
Polyimide resin substrate/gas barrier film,
Gas barrier film/polyimide resin substrate, or
Gas barrier film/polyimide resin substrate/gas barrier film.
[11] A method for producing a laminate according to any one of [1] to [10], comprising: a resin layer forming step of forming the silicone resin layer on the substrate; and a laminating step of laminating the support base on a surface of the silicone resin layer to obtain the laminate.
[12] The method of manufacturing a laminate according to item [11], wherein the resin layer forming step includes: a curable composition containing a curable silicone to be a silicone resin is applied to the 1 st main surface of the substrate, the solvent is removed as necessary to form a coating film, and the curable silicone in the coating film is cured to form a silicone resin layer.
[13] The method for producing a laminate according to [12], wherein the curable silicone is a mixture of an organoalkenylpolysiloxane and an organohydrogenpolysiloxane.
[14] The method for producing a laminate according to [12], wherein the curable silicone is a hydrolyzable silicone compound or a partial hydrolytic condensate obtained by subjecting a hydrolyzable silicone compound to a hydrolytic condensation reaction.
[15] A method for manufacturing an electronic device includes the steps of: a component forming step of forming an electronic device component on a surface of the substrate of the laminate according to any one of the above [1] to [10] to obtain a laminate having an electronic device component; and a separation step of removing the silicone resin layer-bearing support base material including the support base material and the silicone resin layer from the laminate with the electronic device component to obtain an electronic device including the substrate and the electronic device component.
[16] The method of manufacturing an electronic device according to item [9], wherein the member forming step includes a heat treatment.
[17] The method of manufacturing an electronic device according to the above [15] or [16], wherein the heat treatment is performed at 50 to 600 ℃ for 1 to 120 minutes.
According to the present invention, it is possible to provide a laminate in which adhesion of a silicone resin layer to a substrate can be suppressed when the substrate is peeled from the silicone resin layer and a support base.
Further, the present invention can provide a method for manufacturing the laminate and a method for manufacturing an electronic device using the laminate.
Drawings
Fig. 1 is a cross-sectional view schematically showing a laminate.
Fig. 2 is a cross-sectional view schematically showing a resin layer forming step.
Fig. 3 is a sectional view schematically showing a component forming process.
Fig. 4 is a sectional view schematically showing a separation step.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention is not limited to the following embodiments, and various modifications and substitutions may be added to the following embodiments without departing from the scope of the present invention.
< laminate >
Fig. 1 is a cross-sectional view schematically showing a laminate 10.
As shown in fig. 1, the laminate 10 is a laminate including a support base 12 having a hydroxyl group on the surface, a silicone resin layer 14 having a hydroxyl group, and a substrate 16 in this order. In other words, the laminate 10 is a laminate including the support base 12 and the substrate 16 with the silicone resin layer 14 disposed therebetween. One surface of the silicone resin layer 14 is in contact with the support base 12, and the other surface (surface 14a) is in contact with the 1 st main surface 16a of the substrate 16.
The 2-layer portion composed of the support base 12 and the silicone resin layer 14 (hereinafter referred to as "silicone resin layer-attached support base 18") functions as a reinforcing plate for reinforcing the substrate 16.
In the laminate 10, the peel strength y between the silicone resin layer 14 and the substrate 16 is greater than the peel strength x between the support base 12 and the silicone resin layer 14. As shown in fig. 2, such a relationship of the peel strength is realized by, for example, forming the silicone resin layer 14 on the 1 st main surface 16a of the substrate 16 and then laminating the support base 12.
Then, the laminate 10 is subjected to heat treatment, whereby the peel strength is reversed. That is, the peel strength x between the support base 12 and the silicone resin layer 14 is greater than the peel strength y between the silicone resin layer 14 and the substrate 16.
This is considered to be because the hydroxyl group of the support base 12 is bonded to the hydroxyl group of the silicone resin layer 14 by the heat treatment, and the peel strength x between the support base 12 and the silicone resin layer 14 is increased, and the peel strength x is relatively larger than the peel strength y.
As a result, when stress in a direction of separating the support base 12 and the substrate 16 is applied to the laminate 10 after the heat treatment, peeling occurs between the silicone resin layer 14 and the substrate 16, and the substrate 16 and the support base 18 with the silicone resin layer are separated.
In this way, when the substrate 16 is peeled from the silicone resin layer 14 and the support base 12 after the heat treatment, the silicone resin layer 14 can be prevented from adhering to the substrate 16.
The heat treatment applied to the laminate 10 may be performed in the component forming step (step of forming the electronic device component 20 on the substrate 16) described with reference to fig. 3, or may be performed in another step (for example, a step before the component forming step).
The temperature (heating temperature) of the heat treatment is preferably 50 ℃ or higher, more preferably 100 ℃ or higher, still more preferably 150 ℃ or higher, and particularly preferably 200 ℃ or higher.
The upper limit of the heating temperature is not particularly limited, but if the heating temperature is too high, decomposition may occur depending on the kind of the silicone resin layer 14. Therefore, the heating temperature is preferably 600 ℃ or lower, more preferably 550 ℃ or lower, and still more preferably 500 ℃ or lower.
The time of the heat treatment (heating time) is preferably 1 to 120 minutes, more preferably 5 to 60 minutes. The heating atmosphere is not particularly limited, and examples thereof include an atmospheric atmosphere and an inert gas atmosphere (for example, a nitrogen atmosphere and an argon atmosphere).
The heat treatment may be performed in stages with changing temperature conditions.
The peel strength y between the silicone resin layer 14 and the substrate 16 of the laminate 10 is preferably not excessively large, specifically preferably 0.3N/25mm or less, more preferably 0.1N/25mm or less, from the viewpoint of the tendency of inversion of the peel strength due to heat treatment.
Peel strength can be evaluated by a 90 ° peel test. That is, the substrate 16 of the laminate 10 was lifted at 300mm/min and peeled, and the lifting load (peel strength) was evaluated as the peel strength.
(Multi-surface paste form)
Fig. 1 shows a state in which 1 substrate is laminated on a support base via a silicone resin layer. However, the laminate of the present invention is not limited to this embodiment, and may be, for example, a configuration in which a plurality of substrates are laminated on a support base via a silicone resin layer (hereinafter, also referred to as "multi-surface bonded configuration").
More specifically, the multi-surface bonded form is a form in which all of the substrates are in contact with the support base via the silicone resin layer. That is, the substrate is not stacked (only 1 substrate out of the plurality of substrates is in contact with the support base via the silicone resin layer).
In the multi-surface bonded form, for example, a plurality of silicone resin layers are provided on each substrate, and the plurality of substrates and the silicone resin layers are disposed on 1 supporting base. However, the present invention is not limited to this, and for example, each substrate may be disposed on 1 silicone resin layer (for example, the same size as the support base) formed on 1 support base.
Hereinafter, the respective layers (the support base 12, the substrate 16, and the silicone resin layer 14) constituting the laminate 10 will be described in detail, and then the method for producing the laminate 10 will be described in detail.
< support substrate >
The support base 12 is a member for reinforcing the support substrate 16.
The supporting substrate 12 is not particularly limited as long as it is a member having a hydroxyl group on the surface, and examples thereof include a glass plate and a silicon wafer (Si wafer). The presence or absence of hydroxyl groups on the surface of the support substrate can be confirmed by, for example, microscopic infrared spectroscopic analysis.
The kind of glass of the glass plate is not particularly limited, but alkali-free borosilicate glass, soda-lime glass, high-silica glass, and other oxide-based glass containing silicon oxide as a main component are preferable. The oxide glass is preferably a glass having a silicon oxide content of 40 to 90 mass% in terms of oxide.
More specifically, the glass plate is a glass plate made of alkali-free borosilicate glass (trade name "AN 100" manufactured by Asahi glass Co., Ltd.).
The method for producing a glass sheet is not particularly limited, and generally, a glass sheet is obtained by melting a glass raw material and molding the molten glass into a sheet shape. Such a molding method may be a general method, and examples thereof include a float method, a melting method, a flow-hole draw-down method, and the like.
The thickness of the support base 12 may be thicker than the substrate 16 or thinner than the substrate 16. The thickness of the support base 12 is preferably larger than that of the substrate 16 in view of handling of the laminate 10.
When the support base material 12 is a glass plate, the thickness of the glass plate is preferably 0.03mm or more for the reasons of easy handling, difficulty in breakage, and the like. The glass plate preferably has a thickness of 1.0mm or less for the reason that a suitable rigidity for bending without breaking is desired when peeling the substrate 16.
< substrate >
The substrate 16 is a polyimide resin substrate or a laminated substrate having at least 1 layer each of a polyimide resin substrate and a gas barrier film.
The polyimide resin substrate is a substrate made of a polyimide resin, and examples of commercially available products thereof include "Xenomax" manufactured by toyobo co, and "UPILEX 25S" manufactured by yakyo co.
In order to form high-definition wiring and the like of electronic devices on a polyimide resin substrate, the surface of the polyimide resin substrate is preferably smooth. Specifically, the surface roughness Ra of the polyimide resin substrate is preferably 50nm or less, more preferably 30nm or less, and still more preferably 10nm or less.
The thickness of the polyimide resin substrate is preferably 1 μm or more, more preferably 10 μm or more, from the viewpoint of handling properties in the production process. From the viewpoint of flexibility, it is preferably 1mm or less, more preferably 0.2mm or less.
The difference in thermal expansion coefficient between the polyimide resin substrate and the electronic device or the support base material is preferably small because warpage of the laminate after heating or cooling can be suppressed, and specifically, the difference in thermal expansion coefficient between the polyimide resin substrate and the support base material is preferably 0 to 90 × 10-6The temperature is more preferably 0 to 30 × 10 DEG C-6/℃。
The gas barrier film may be appropriately selected depending on the use of the substrate 16, but a gas barrier film made of an inorganic material (inorganic gas barrier film) is preferable.
Examples of the material of the inorganic gas barrier film include silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy), and aluminum oxide (Al)2O3) Silicon nitride (SiNx) is preferred. Here, x represents a number of 2.0 or less, and y represents a number of 4/3 or less.
As the method for forming the inorganic gas barrier film, a known method for forming an inorganic thin film can be used, and specific examples thereof include a sputtering method, an ion plating method, and a plasma chemical vapor deposition method (hereinafter, abbreviated as a plasma CVD method).
The thickness of the inorganic gas barrier film is not particularly limited as long as it is appropriately adjusted according to the use of the substrate 16, but is preferably 5 to 2000nm, more preferably 50 to 500 nm.
The form of the laminated substrate having at least 1 layer each of the polyimide resin substrate and the gas barrier film (hereinafter, simply referred to as "laminated substrate") is not particularly limited, and examples thereof include the following forms.
Form 1: polyimide resin substrate/gas barrier film
Form 2: gas barrier film/polyimide resin substrate
Form 3: gas barrier film/polyimide resin substrate/gas barrier film
Form 4: gas barrier film/polyimide resin substrate/gas barrier film/adhesive/gas barrier film/polyimide resin substrate/gas barrier film
Form 5: polyimide resin substrate/gas barrier film/polyimide resin substrate/gas barrier film
Form 6: gas barrier film/polyimide resin substrate/gas barrier film
In the above embodiments 1 to 6, the description is made in order from the side close to the silicone resin layer. For example, the above embodiment 1 is an embodiment in which the polyimide resin substrate is in contact with the silicone resin layer.
The adhesive material of the above embodiment 4 is a conventionally known adhesive, and is not particularly limited.
The polyimide resin substrate in the laminate substrate is usually formed in a film shape as it is, but is not limited to this, and a varnish may be applied and cured. For example, in the above embodiments 5 to 6, the "gas barrier film/polyimide resin substrate/gas barrier film" may be first formed using a film-like polyimide resin substrate, and then a varnish may be applied to one of the gas barrier films and dried and cured to form a polyimide resin substrate.
The area of the substrate 16 (the area of the main surface) is not particularly limited, but is preferably 300cm in view of productivity of the electronic device2Above, it is more preferableSelect 1000cm2Above, more preferably 6000cm2。
The shape of the substrate 16 is not particularly limited, and may be rectangular or circular. An Orientation flat (a flat portion formed at the outer periphery of the substrate) or a notch (one or more V-shaped cutouts formed at the outer periphery of the substrate) may be formed on the substrate 16.
< Silicone resin layer >
The silicone resin layer 14 has a hydroxyl group.
As will be described later, the silicone resin layer 14 is made of a silicone resin. It is considered that in the silicone resin layer 14, a part of Si — O — Si bonds of 1T unit, which is one type of the organosiloxy unit constituting the silicone resin, is cleaved, whereby hydroxyl groups appear.
As described later, when a condensation reaction type silicone is used as the curable silicone to be the silicone resin, a hydroxyl group of the condensation reaction type silicone may be a hydroxyl group of the silicone resin layer 14.
The thickness of the silicone resin layer 14 is preferably 100 μm or less, more preferably 50 μm or less, and still more preferably 30 μm or less. On the other hand, for the lower limit, the thickness of the silicone resin layer 14 is preferably greater than 1 μm, more preferably 4 μm or more.
If the thickness of the silicone resin layer 14 is within this range, the silicone resin layer 14 is less likely to crack, and even if air bubbles or foreign matter is interposed between the silicone resin layer 14 and the substrate 16, the occurrence of distortion defects in the substrate 16 can be suppressed.
The thickness is a value obtained by measuring the thickness of the silicone resin layer 14 at any position of 5 points or more by a contact type film thickness measuring apparatus and arithmetically averaging the thicknesses.
The surface roughness Ra of the substrate 16 side surface of the silicone resin layer 14 is not particularly limited, but is preferably 0.1 to 20nm, more preferably 0.1 to 10nm, from the viewpoint of further excellent lamination property and peeling property of the substrate 16.
The surface roughness Ra is measured in accordance with JIS B0601-2001, and the value obtained by arithmetically averaging Ra measured at any point of 5 or more corresponds to the surface roughness Ra.
(Silicone resin)
The silicone resin layer 14 is mainly composed of a silicone resin.
Typically, the organosiloxy units include monofunctional organosiloxy units known as M units, difunctional organosiloxy units known as D units, trifunctional organosiloxy units known as T units, and tetrafunctional organosiloxy units known as Q units. The Q unit is a unit having no silicon atom-bonded organic group (organic group having a silicon atom-bonded carbon atom), but is regarded as an organosiloxy unit (silicon-bonded unit) in the present invention. Monomers forming the M unit, D unit, T unit, and Q unit are also referred to as M monomer, D monomer, T monomer, and Q monomer, respectively.
All organosiloxy units refer to the sum of the M units, D units, T units and Q units. The ratio of the number (molar amount) of the M unit, the D unit, the T unit and the Q unit is determined based on29The value of the peak area ratio obtained by Si-NMR.
In the organosiloxy unit, the siloxane bond is a bond in which 2 silicon atoms are bonded via 1 oxygen atom, and the oxygen atom of each silicon atom of the siloxane bond is regarded as 1/2, represented by O in the formula1/2. More specifically, for example, 1D unit, the 1 silicon atom is bonded to 2 oxygen atoms, each oxygen atom is bonded to the silicon atom of the other unit, and therefore, the formula is-O1/2－(R)2Si－O1/2- (R represents a hydrogen atom or an organic group). Due to the presence of 2O1/2Thus, the D unit is generally represented as (R)2SiO2/2(in other words, (R)2SiO)。
In the following description, the oxygen atom O bonded to another silicon atom*The oxygen atom for bonding 2 silicon atoms to each other means an oxygen atom in a bond represented by Si-O-Si. Thus, O*There are 1 between the silicon atoms of the 2 organosiloxy units.
M unit is defined by (R)3SiO1/2The indicated organosiloxy units. Here, R represents a hydrogen atom or an organic group. The number (here, 3) described after (R) means that 3 hydrogen atoms or organic groups are bonded to a silicon atom. That is, the M unit has 1 silicon atom, 3 hydrogen atoms or organic groups and 1 oxygen atom O*. More specifically, the M unit has 3 hydrogen atoms or organic groups bonded to 1 silicon atom and an oxygen atom O bonded to 1 silicon atom*。
D unit is defined by (R)2SiO2/2(R represents a hydrogen atom or an organic group). That is, the D unit is an O unit having 1 silicon atom, 2 hydrogen atoms or organic groups bonded to the silicon atom, and 2 oxygen atoms bonded to other silicon atoms*The unit (2).
T unit is defined by RSiO3/2(R represents a hydrogen atom or an organic group). That is, the T unit is an O unit having 1 silicon atom, 1 hydrogen atom or organic group bonded to the silicon atom, and 3 oxygen atoms bonded to other silicon atoms*The unit (2).
The Q unit is formed by SiO2The indicated organosiloxy units. That is, the Q unit is O having 1 silicon atom and having 4 oxygen atoms bonded to other silicon atoms*The unit (2).
Examples of the organic group include alkyl groups such as methyl, ethyl, propyl, butyl, pentyl, hexyl, cyclohexyl, and heptyl; aryl groups such as phenyl, tolyl, xylyl, and naphthyl; aralkyl groups such as benzyl and phenethyl; halogen-substituted monovalent hydrocarbon groups such as haloalkyl groups (e.g., chloromethyl, 3-chloropropyl, 3,3, 3-trifluoropropyl, etc.). The organic group is preferably an unsubstituted or halogen-substituted monovalent hydrocarbon group having 1 to 12 carbon atoms (preferably about 1 to 10 carbon atoms).
The structure of the silicone resin constituting the silicone resin layer 14 is not particularly limited, and preferably includes at least T units as organosiloxy units.
The proportion of the specific organosiloxy unit is preferably 20 mol% or more, more preferably 30 mol% or more, and still more preferably 60 mol% or more based on the total organosiloxy units. The upper limit is not particularly limited, but is usually 90 mol% or less.
(curable Silicone)
The silicone resin is generally obtained by curing (crosslinking curing) a curable silicone capable of being converted into a silicone resin by a curing treatment. That is, the silicone resin corresponds to a cured product of curable silicone.
The curable silicones are classified into condensation reaction type silicones, addition reaction type silicones, ultraviolet ray curable silicones, and electron beam curable silicones according to the curing mechanism thereof, but any of them can be used.
As the condensation reaction type silicone, a hydrolyzable organosilane compound or a mixture thereof (monomer mixture) as a monomer, or a partially hydrolyzed condensate (organopolysiloxane) obtained by subjecting a monomer or a monomer mixture to a partial hydrolytic condensation reaction can be preferably used. Or a mixture of the partial hydrolysis condensate and the monomer. The monomers may be used alone or in combination of 2 or more.
The silicone resin can be formed by hydrolysis and condensation reaction (sol-gel reaction) using the condensation reaction type silicone.
The above-mentioned monomer (hydrolyzable organosilane compound) is usually composed of (R' -)aSi(－Z)4－aAnd (4) showing. Wherein a represents an integer of 0 to 3, R' represents a hydrogen atom or an organic group, and Z represents a hydroxyl group or a hydrolyzable group. In the chemical formula, a-3 compound is an M monomer, a-2 compound is a D monomer, a-1 compound is a T monomer, and a-0 compound is a Q monomer. In the monomer, the Z group is usually a hydrolyzable group. When 2 or 3R's are present (when a is 2 or 3), the plural R's may be different.
The curable silicone as a partial hydrolysis condensate is prepared by converting a part of the Z group of the monomer to an oxygen atom O*Is obtained by the reaction of (1). When the Z group of the monomer is a hydrolyzable group, the Z group is converted into a hydroxyl group by hydrolysis reaction and then subjected to dehydration condensation reaction between 2 hydroxyl groups bonded to the respective silicon atoms2 silicon atoms via oxygen atoms O*And (4) bonding. Hydroxyl groups (or unhydrolyzed Z groups) remain in the curable silicone, and when the curable silicone cures, these hydroxyl groups or Z groups react and cure in the same manner as described above. The cured product of the curable silicone is usually a three-dimensionally crosslinked polymer (silicone resin).
When the Z group of the monomer is a hydrolyzable group, examples of the Z group include an alkoxy group, a halogen atom (e.g., chlorine atom), an acyloxy group, and an isocyanate group. In many cases, a monomer in which the Z group is an alkoxy group is used as a monomer, and such a monomer is also referred to as an alkoxysilane.
The alkoxy group is a hydrolyzable group having a lower reactivity than other hydrolyzable groups such as a chlorine atom, and in a curable silicone obtained using a monomer (alkoxysilane) in which the Z group is an alkoxy group, a hydroxyl group and an unreacted alkoxy group are often present as the Z group.
The condensation reaction type silicone is preferably a partially hydrolyzed condensate (organopolysiloxane) obtained from a hydrolyzable organosilane compound in terms of control of the reaction and handling. The partial hydrolysis condensate is obtained by partially subjecting a hydrolyzable organosilane compound to hydrolysis condensation. The method of partially carrying out the hydrolytic condensation is not particularly limited. The hydrolyzable organosilane compound is usually produced by reacting in a solvent in the presence of a catalyst. Examples of the catalyst include an acid catalyst and a base catalyst. Water is generally preferred for the hydrolysis reaction. The partial hydrolysis condensate is preferably produced by reacting a hydrolyzable organosilane compound in a solvent in the presence of an aqueous acid or alkali solution.
As a preferred embodiment of the hydrolyzable organosilane compound used, there may be mentioned an alkoxysilane as mentioned above. That is, one of suitable forms of the curable silicone includes a curable silicone obtained by a hydrolysis reaction and a condensation reaction of alkoxysilane.
When alkoxysilane is used, the polymerization degree of the partial hydrolysis condensate is likely to increase, and the effect of the present invention is more excellent.
As the addition reaction type silicone, a curable composition containing a main agent and a crosslinking agent and cured in the presence of a catalyst such as a platinum catalyst is preferably used. Curing of the addition reaction type silicone is promoted by heating. The main agent in the addition reaction type silicone is preferably an organopolysiloxane (i.e., an organoalkenylpolysiloxane, preferably linear) having an alkenyl group (e.g., vinyl group) bonded to a silicon atom, the alkenyl group or the like serving as a crosslinking point. The crosslinking agent in the addition reaction type silicone is preferably an organopolysiloxane (i.e., an organohydrogenpolysiloxane, preferably linear) having a hydrogen atom (hydrosilyl group) bonded to a silicon atom, and the hydrosilyl group or the like serves as a crosslinking point. The addition reaction type silicone is cured by addition reaction at the crosslinking points of the main agent and the crosslinking agent. The molar ratio of the hydrogen atoms bonded to the silicon atoms of the organohydrogenpolysiloxane to the alkenyl groups of the organoalkenylpolysiloxane is preferably 0.5 to 2 in view of more excellent heat resistance from the crosslinked structure.
The weight average molecular weight (Mw) of the curable silicone such as the condensation reaction type silicone and the addition reaction type silicone is not particularly limited, and is preferably 5000 to 60000, more preferably 5000 to 30000. When Mw is 5000 or more, it is excellent from the viewpoint of coatability, and when Mw is 60000 or less, it is preferable from the viewpoint of solubility in a solvent and coatability.
(curable composition)
The method for producing the silicone resin layer 14 is not particularly limited, and a known method can be used. Among them, from the viewpoint of excellent productivity of the silicone resin layer 14, as a method for producing the silicone resin layer 14, it is preferable to apply a curable composition containing a curable silicone which is the silicone resin to the 1 st main surface 16a of the substrate 16, remove the solvent as necessary to form a coating film, and cure the curable silicone in the coating film to produce the silicone resin layer 14.
As described above, as the curable silicone, a hydrolyzable organosilane compound as a monomer and/or a partial hydrolytic condensate (organopolysiloxane) obtained by subjecting a monomer to a partial hydrolytic condensation reaction can be used. As the curable silicone, a mixture of an organoalkenylpolysiloxane and an organohydrogenpolysiloxane may also be used.
When an addition reaction type silicone is used as the curable silicone, the curable composition may contain a platinum catalyst as a metal compound containing another metal element, as necessary.
The platinum catalyst is a catalyst for promoting the hydrosilylation reaction between the alkenyl group in the organoalkenylpolysiloxane and the hydrogen atom in the organohydrogenpolysiloxane.
The curable composition may contain a solvent, and in this case, the thickness of the coating film can be controlled by adjusting the concentration of the solvent. Among these, the content of the curable silicone in the curable composition containing the curable silicone is preferably 1 to 80% by mass, and more preferably 1 to 50% by mass, based on the total mass of the composition, from the viewpoint of excellent workability and easier control of the film thickness of the silicone resin layer 14.
The solvent is not particularly limited as long as it can easily dissolve the curable silicone in the working environment and can be easily volatilized and removed. Specific examples thereof include butyl acetate, 2-heptanone, 1-methoxy-2-propanol acetate, and diethylene glycol diethyl ester.
Further, as the solvent, a commercially available product such as "Isoper G" (manufactured by Tonen General Sekiyu Co., Ltd.) can be used.
The curable composition may contain various additives. For example, a leveling agent may be included. Examples of the leveling agent include fluorine-based leveling agents such as MEGA FAC F558, MEGA FAC F560, and MEGA FAC F561 (both available from DIC corporation).
The curable composition may contain a metal compound as an additive.
Examples of the metal element contained in the metal compound include a 3d transition metal, a 4d transition metal, a lanthanoid metal, bismuth (Bi), aluminum (Al), tin (Sn), and the like.
Examples of the 3d transition metal include transition metals in the 4 th period of the periodic table, i.e., metals of scandium (Sr) to copper (Cu). Specific examples thereof include scandium (Sc), titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), and copper (Cu).
Examples of the 4d transition metal include transition metals in the 5 th period of the periodic table, i.e., yttrium (Y) to silver (Ag). Specifically, yttrium (Y), zirconium (Zr), niobium (Nb), molybdenum (Mo), technetium (Tc), ruthenium (Ru), rhodium (Rh), palladium (Pd), and silver (Ag) may be mentioned.
The lanthanoid metal includes lanthanum (La) to lutetium (Lu). Specifically, lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and lutetium (Lu) may be mentioned.
The metal compound is preferably a complex. The complex is an aggregate in which a ligand (atom, atomic group, molecule or ion) is bonded to an atom or ion of a metal element as a center. The kind of the ligand contained in the complex is not particularly limited, and examples thereof include ligands selected from β -diketones, carboxylic acids, alkoxides, and alcohols.
Examples of the β -diketone include acetylacetone, methyl acetoacetate, ethyl acetoacetate, and benzoylacetone.
Examples of the carboxylic acid include acetic acid, 2-ethylhexanoic acid, naphthenic acid, and neodecanoic acid.
Examples of the alkoxide include methoxide, ethoxide, n-propoxide (n-propoxide), isopropoxide, and n-butoxide (n-butoxide).
Examples of the alcohol include methanol, ethanol, n-propanol, isopropanol, n-butanol, and t-butanol.
The content of the metal compound in the curable composition is not particularly limited and may be appropriately adjusted.
< method for producing laminate >
As shown in fig. 2, the method for producing the laminate 10 is preferably a method for forming the silicone resin layer 14 on the 1 st main surface 16a of the substrate 16.
Specifically, a method of producing the laminate 10 is preferred in which a curable composition containing a curable silicone is applied to the 1 st main surface 16a of the substrate 16, the obtained coating film is subjected to a curing treatment to obtain the silicone resin layer 14, and then the support base 12 is laminated on the surface of the silicone resin layer 14.
Thus, the peel strength y between the silicone resin layer 14 and the substrate 16 is greater than the peel strength x between the support base 12 and the silicone resin layer 14.
That is, the method for manufacturing the laminate 10 includes: a step (resin layer forming step) of forming a layer of curable silicone on the 1 st main surface 16a of the substrate 16 and forming a silicone resin layer 14 on the 1 st main surface 16a of the substrate 16; and a step (laminating step) of laminating the support base 12 on the surface of the silicone resin layer 14 to obtain a laminate 10.
The sequence of the above steps will be described in detail below.
(resin layer Forming step)
The resin layer forming step is a step of forming a layer of curable silicone on the 1 st main surface 16a of the substrate 16 and forming the silicone resin layer 14 on the 1 st main surface 16a of the substrate 16. This step yields a silicone resin layer-bearing substrate that includes the substrate 16 and the silicone resin layer 14 in this order.
The substrate with the silicone resin layer can be manufactured by a so-called Roll-to-Roll (Roll to Roll) method in which the silicone resin layer 14 is formed on the 1 st main surface 16a of the substrate 16 wound in a Roll and then wound in a Roll again, and thus the production efficiency is excellent.
In this step, in order to form a layer of curable silicone on the 1 st main surface 16a of the substrate 16, for example, the curable composition described above is preferably applied to the 1 st main surface 16a of the substrate 16. Next, the layer of curable silicone is cured to form a cured layer.
The method for applying the curable composition to the 1 st main surface 16a of the substrate 16 is not particularly limited, and a known method may be mentioned. Examples thereof include a spray coating method, a die coating method, a spin coating method, a dip coating method, a roll coating method, a bar coating method, a screen printing method, and a gravure coating method.
Next, the curable silicone applied to the 1 st main surface 16a of the substrate 16 is cured to form a cured layer (silicone resin layer 14).
The method of curing is not particularly limited, and the optimum treatment is appropriately performed depending on the type of curable silicone used. For example, when a condensation reaction type silicone or an addition reaction type silicone is used, a heat curing treatment is preferable as the curing treatment.
The heat curing treatment is performed under a temperature condition within a range of heat resistance of the substrate 16, and for example, the heat curing is preferably performed under a temperature condition of 50 to 400 ℃, more preferably 100 to 300 ℃. The heating time is preferably 10 to 300 minutes, more preferably 20 to 120 minutes.
The form of the silicone resin layer 14 formed is as described above.
(laminating step)
The lamination step is a step of laminating the support base 12 on the surface of the silicone resin layer 14 to obtain the laminate 10. The lamination step is a step of forming the laminate 10 using the substrate with the silicone resin layer and the support base 12.
The method of laminating the support base 12 on the surface of the silicone resin layer 14 is not particularly limited, and known methods may be mentioned.
For example, a method of superposing the support base 12 on the surface of the silicone resin layer 14 in a normal pressure environment is given. After the support base 12 is superimposed on the surface of the silicone resin layer 14 as necessary, the support base 12 is pressed against the silicone resin layer 14 using a roller or a press. Pressing with a roller or a press is preferable because bubbles mixed between the silicone resin layer 14 and the supporting base material 12 can be removed relatively easily.
When the lamination is performed by the vacuum lamination method or the vacuum press method, mixing of air bubbles is suppressed and adhesion with a good amount is achieved, which is preferable. By performing the pressing under vacuum, even if minute air bubbles remain, the air bubbles are not easily grown by the heat treatment.
Note that if the pressing is performed at normal temperature, the peel strength y between the silicone resin layer 14 and the substrate 16 is easily maintained to be higher than the peel strength x between the support base 12 and the silicone resin layer 14, which is preferable.
When the support base material 12 is laminated, it is preferable that the surface of the support base material 12 in contact with the silicone resin layer 14 is sufficiently cleaned and laminated in an environment with high cleanliness.
< use of laminate >
The laminate 10 can be used for various applications, and examples thereof include applications for manufacturing electronic components such as a panel for a display device, PV, a thin film secondary battery, a semiconductor wafer having a circuit formed on a surface thereof, and a receiving sensor panel, which will be described later. In some of these applications, the laminate may be exposed to high temperature conditions (e.g., 450 ℃ or higher) in an air atmosphere (e.g., 20 minutes or longer).
The panel for display devices includes LCD, OLED, electronic paper, plasma display panel, field emission panel, quantum dot LED panel, micro LED display panel, mems (micro Electro Mechanical systems) shutter panel, and the like.
The receiving sensor panel includes an electromagnetic wave receiving sensor panel, an X-ray receiving sensor panel, an ultraviolet ray receiving sensor panel, a visible light receiving sensor panel, an infrared ray receiving sensor panel, and the like. The substrate used for the reception sensor panel may be reinforced with a reinforcing sheet such as resin.
< method for manufacturing electronic device >
An electronic device (substrate with component 24) including the substrate 16 and the electronic device component 20 is manufactured using the laminate 10.
The method for manufacturing the electronic device is not particularly limited, and a method is preferred in which the electronic device component 20 is formed on the substrate 16 of the laminate 10 to obtain the laminate 22 with the electronic device component, and then the obtained laminate 22 with the electronic device component is separated into the electronic device (the substrate 24 with the component) and the support base 18 with the silicone resin layer from the interface between the silicone resin layer 14 and the substrate 16 as a release surface.
Hereinafter, the step of forming the electronic device component 20 is referred to as a "component forming step", and the step of separating the substrate 24 with a component and the support base 18 with a silicone resin layer is referred to as a "separating step".
When the above-described heat treatment is not performed on the laminate 10, the member forming step preferably includes the above-described heat treatment step.
The materials and the sequence used in the respective steps will be described in detail below.
(Member Forming Process)
The component forming step is a step of forming a component for an electronic device on the substrate 16 of the laminate 10. More specifically, as shown in fig. 3, the electronic device component 20 is formed on the 2 nd main surface 16b (exposed surface) of the substrate 16, and the laminate 22 having the electronic device component is obtained.
First, the electronic device component 20 used in the present step will be described in detail, and then the order of the steps will be described in detail.
(component for electronic device (functional element))
The electronic device component 20 is a component that is formed on the substrate 16 in the stacked body 10 and constitutes at least a part of an electronic device. More specifically, examples of the electronic device component 20 include components used for a display device panel, an electronic component such as a solar cell or a thin film secondary battery, or a semiconductor wafer having a circuit formed on the surface thereof, and a receiving sensor panel (for example, a display device component such as LTPS, a solar cell component, a thin film secondary battery component, an electronic component circuit, and a receiving sensor component).
For example, as the solar cell member, a silicon type includes a transparent electrode such as tin oxide of a positive electrode, a silicon layer represented by p layer/i layer/n layer, and a metal of a negative electrode, and various members corresponding to a compound type, a dye-sensitized type, a quantum dot type, and the like.
As the member for a thin film secondary battery, in the lithium ion type, there are exemplified transparent electrodes of metals, metal oxides, and the like of the positive electrode and the negative electrode, lithium compounds of the electrolyte layer, metals of the current collecting layer, resins as the sealing layer, and the like, and there are exemplified various members corresponding to the nickel hydrogen type, the polymer type, the ceramic electrolyte type, and the like.
As the electronic component circuit, in CCD and CMOS, metals of a conductive portion, silicon oxide and silicon nitride of an insulating portion, and the like are exemplified, and various components corresponding to various sensors such as a pressure sensor and an acceleration sensor, a rigid printed circuit board, a flexible printed circuit board, a rigid flexible printed circuit board, and the like are exemplified.
(order of Steps)
The method for producing the laminate 22 with the electronic device component is not particularly limited, and the electronic device component 20 is formed on the 2 nd main surface 16b of the substrate 16 of the laminate 10 by a conventionally known method depending on the type of the component of the electronic device component.
The electronic device component 20 may be not all of the components finally formed on the 2 nd main surface 16b of the substrate 16 (hereinafter, referred to as "all components") but may be a part of all of the components (hereinafter, referred to as "partial components"). The substrate with the tape part peeled from the silicone resin layer 14 is processed into a substrate with all the components (corresponding to an electronic device described later) in a subsequent step.
The substrate with all the components peeled from the silicone resin layer 14 may have other electronic device components formed on the peeling surface (the 1 st main surface 16a) thereof. Alternatively, the assembly may be performed using 2 laminates with all the components, and thereafter, the 2 silicone resin layer-bearing support base 18 may be peeled off from the laminates with all the components to produce the 2-component-bearing substrate 24.
For example, in the case of manufacturing an OLED, in order to form an organic EL structure on the surface (the 2 nd main surface 16b) of the substrate 16 of the laminate 10 opposite to the silicone resin layer 14 side, various layers are formed and processed, such as forming a transparent electrode, further depositing a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and the like on the surface on which the transparent electrode is formed, forming a back electrode, and sealing with a sealing plate. Specific examples of the layer formation and treatment include film formation, vapor deposition, and bonding of a sealing plate.
For example, when manufacturing a TFT-LCD, the TFT-LCD has: a TFT forming step of forming a Thin Film Transistor (TFT) on the 2 nd main surface 16b of the substrate 16 of the laminate 10 using a material such as LTPS; a CF forming step of forming a Color Filter (CF) by patterning a resist solution on the 2 nd main surface 16b of the substrate 16 of the other laminate 10; and a bonding step of laminating the TFT-equipped laminate obtained in the TFT forming step and the CF-equipped laminate obtained in the CF forming step.
For example, when manufacturing a micro LED display, the following is provided: a TFT forming step of forming a Thin Film Transistor (TFT) using a material such as LTPS at least on the 2 nd main surface 16b of the substrate 16 of the laminate 10; and an LED mounting step of mounting an LED chip on the TFT formed above. In addition, steps such as planarization, wiring formation, and sealing may be performed.
In the TFT forming step and the CF forming step, TFTs and CFs are formed on the 2 nd main surface 16b of the substrate 16 by using a known photolithography technique, etching technique, or the like. In this case, a resist solution is used as a coating liquid for pattern formation.
Before forming the TFTs and CF, the 2 nd main surface 16b of the substrate 16 may be cleaned as necessary. As the cleaning method, known dry cleaning and wet cleaning can be used.
In the bonding step, the thin-film transistor formation surface of the laminate with TFTs and the color filter formation surface of the laminate with CFs are opposed to each other, and bonding is performed using a sealant (for example, an ultraviolet-curable sealant for cell formation). Thereafter, a liquid crystal material is injected into a cell formed by the stacked body with TFTs and the stacked body with CFs. Examples of the method for injecting the liquid crystal material include a reduced pressure injection method and a dropping injection method.
In forming the electronic device member 20, the above-described heat treatment is preferably performed. Thereby, the peel strength is reversed.
That is, as described above, the peel strength y between the silicone resin layer 14 and the substrate 16 is greater than the peel strength x between the support base 12 and the silicone resin layer 14 before the heat treatment, but the peel strength x between the support base 12 and the silicone resin layer 14 is greater than the peel strength y between the silicone resin layer 14 and the substrate 16 after the heat treatment.
(separation Process)
As shown in fig. 4, the separation step is a step of: the laminate 22 with the electronic device component obtained in the component forming step is separated into the substrate 16 (substrate 24 with component) on which the electronic device component 20 is laminated and the support base 18 with the silicone resin layer, with the interface between the silicone resin layer 14 and the substrate 16 as a release surface, and a substrate 24 with component (electronic device) including the electronic device component 20 and the substrate 16 is obtained.
As described above, the peel strength x between the support base 12 and the silicone resin layer 14 is greater than the peel strength y between the silicone resin layer 14 and the substrate 16 by the heat treatment in the component forming step. Therefore, peeling occurs between the silicone resin layer 14 and the substrate 16.
When the electronic device component 20 on the substrate 16 to be peeled is a part of all the necessary components, the remaining components can be formed on the substrate 16 after separation.
The method of peeling the substrate 16 from the silicone resin layer 14 is not particularly limited. For example, a sharp cutter may be inserted into the interface between the substrate 16 and the silicone resin layer 14 to provide a peeling trigger, and then a mixed fluid of water and compressed air is blown to perform peeling.
It is preferable that the laminate 22 with the electronic device component is placed on a platen so that the support base 12 is on the upper side and the electronic device component 20 side is on the lower side, and the electronic device component 20 side is vacuum-sucked onto the platen, and in this state, the tool is first caused to enter the interface between the substrate 16 and the silicone resin layer 14. Thereafter, the support base 12 side is sucked by a plurality of vacuum suction pads, and the vacuum suction pads are sequentially lifted from the vicinity of the portion where the cutter is inserted. In this way, the support base 18 with the silicone resin layer can be easily peeled off.
When the substrate 24 with the component is separated from the laminate 22 with the electronic device component, the fragments of the silicone resin layer 14 can be further inhibited from being electrostatically adsorbed on the substrate 24 with the component by blowing by the ionization device or controlling the humidity.
The above-described method for manufacturing an electronic device (substrate with component 24) is suitable for manufacturing a small display device. The display device is mainly an LCD or OLED. The LCD includes, for example, TN type, STN type, FE type, TFT type, MIM type, IPS type, VA type LCDs. Basically, the display device can be used for either a passive drive type or an active drive type.
Examples of the substrate 24 with a member include a display panel having a member for a display device, a solar cell having a member for a solar cell, a thin-film secondary cell having a member for a thin-film secondary cell, and a receiving sensor panel having a member for a receiving sensor.
The panel for a display device includes a liquid crystal panel, an organic EL panel, a plasma display panel, a field emission panel, and the like.
The receiving sensor panel includes an electromagnetic wave receiving sensor panel, an X-ray receiving sensor panel, an ultraviolet ray receiving sensor panel, a visible light receiving sensor panel, an infrared ray receiving sensor panel, and the like.
Examples
The present invention will be specifically described below with reference to examples and the like, but the present invention is not limited to these examples.
In examples 1 to 9 below, a glass plate made of alkali-free borosilicate glass (linear expansion coefficient 38 × 10) was used-7A polyimide film (linear expansion coefficient 30 × 10, trade name "AN 100" manufactured by Asahi glass Co., Ltd.) was used as a supporting substrate-7/° c, manufactured by toyoyo chemical co., ltd.) as a substrate. The presence of hydroxyl groups (OH groups) on the surface of the glass sheet before lamination was confirmed by microscopic infrared spectroscopic analysis.
Examples 1 to 7 are examples, and examples 8 to 9 are comparative examples.
< example 1 >
(preparation of curable Silicone 1)
The organohydrogensiloxane and the alkenyl group-containing siloxane were mixed to obtain curable silicone 1. The curable silicone 1 had a composition in which the molar ratio of the M units, D units, and T units was 9:59:32, the molar ratio of the methyl groups to the phenyl groups of the organic group was 44:56, the molar ratio of all alkenyl groups to the hydrogen atoms bonded to all silicon atoms (hydrogen atoms/alkenyl groups) was 0.7, and the average number of OX groups was 0.1. The average OX number is a number indicating that several OX groups (X is a hydrogen atom or a hydrocarbon group) are bonded on average to 1 Si atom.
(preparation of curable composition 1)
Platinum (0) -1,3-divinyl-1,1,3,3-tetramethyldisiloxane (Platinum (0) -1,3-divinyl-1,1,3,3-tetramethyldisiloxane, CAS No.68478-92-2) was added to the curable silicone 1 in such a manner that the content of Platinum element was 60ppm, to obtain a mixture a. The mixture A (200g), bismuth 2-ethylhexanoate ("Pucat 25", manufactured by Nippon chemical industry Co., Ltd., metal content 25%) (0.08g), and diethylene glycol diethyl ester ("HisolveEDE", manufactured by Toho chemical industry Co., Ltd.) (84.7g) as a solvent were mixed, and the resulting mixture was filtered through a filter having a pore diameter of 0.45. mu.m, to obtain a curable composition 1.
(preparation of laminate)
The obtained curable composition 1 was applied to a polyimide film (trade name "Xenomax" manufactured by Toyo Boseki Kaisha) having a thickness of 0.038mm as a polyimide resin substrate, and heated at 140 ℃ for 10 minutes using a hot plate to form a silicone resin layer on the polyimide resin substrate. The thickness of the silicone resin layer was 10 μm.
The presence of hydroxyl groups (OH groups) in the cured silicone resin layer was confirmed by microscopic infrared spectroscopic analysis.
Then, a glass plate "AN 100" (supporting substrate) of 200X 200mm and 0.5mm in thickness, which was cleaned with a water-based glass cleaner ("PK-LGC 213" manufactured by Parker Corporation) and then cleaned with pure water, was placed on the silicone resin layer and bonded using a bonding apparatus to prepare a laminate.
(evaluation of peeling)
The peel strength and the like were evaluated by performing a 90 ° peel test. Specifically, the polyimide resin substrate of the laminate was lifted and peeled at 300mm/min, and the peel interface and the lifting load (peel strength) were evaluated. The peel strength was taken as the peel strength (unit: N/25 mm).
The peel strength of each of the samples which were not subjected to the heat treatment after the lamination, the samples which were subjected to the heat treatment at 220 ℃ for 30 minutes under the atmosphere, and the samples which were subjected to the heat treatment at 450 ℃ for 60 minutes under the nitrogen gas was evaluated.
(evaluation of the number of hydroxyl groups after Heat treatment)
After peeling the polyimide resin substrate of the laminate subjected to heat treatment at 450 ℃ for 60 minutes under nitrogen, the number of hydroxyl groups in the silicone resin layer was evaluated by microscopic infrared spectroscopic analysis, and it was confirmed that the spectral intensity due to the hydroxyl groups was lower than that before the heat treatment.
< example 2 >
(preparation of curable Silicone 2)
A1L flask was charged with triethoxymethylsilane (179g), toluene (300g) and acetic acid (5g) to give a mixture. The resulting mixture was stirred at 25 ℃ for 20 minutes, and thereafter, heated to 60 ℃ to react for 12 hours, thereby obtaining a reaction crude liquid 1. The obtained crude reaction solution 1 was cooled to 25 ℃ and then washed 3 times with water (300 g). Chlorotrimethylsilane (70g) was added to the washed reaction crude liquid 1, and the mixture was stirred at 25 ℃ for 20 minutes, and then heated to 50 ℃ to react for 12 hours, thereby obtaining a reaction crude liquid 2. The obtained crude reaction solution 2 was cooled to 25 ℃ and then washed 3 times with water (300 g). Toluene was distilled off from the washed reaction crude liquid 2 under reduced pressure to obtain a slurry. The obtained slurry was dried overnight using a vacuum dryer to obtain a white organopolysiloxane compound, namely, curable silicone 2. The molar ratio of the M units to the T units of the curable silicone 2 was 13:87, all organic groups were methyl groups, and the average number of OX was 0.02.
(preparation of curable composition 2)
Curable composition 2 was obtained by mixing curable silicone 2(50g), zirconium tetra-n-propoxide ("Organics ZA-45", manufactured by Matsumoto Fine Chemical co., ltd., metal content 21.1%) (0.24g) as a metal compound, and IsoperG (manufactured by Tonen General Sekiyu, ltd.) (75g) as a solvent, and filtering the resulting mixture through a filter having a pore size of 0.45 μm.
(preparation of laminate)
Using the prepared curable composition 2, a laminate was produced in the same manner as in example 1. The thickness of the silicone resin layer was 4 μm.
The presence of hydroxyl groups in the cured silicone resin layer was confirmed by microscopic infrared spectroscopic analysis.
(evaluation of peeling)
The peel strength and the like were evaluated in the same manner as in example 1. The evaluation was also performed on a sample subjected to heat treatment at 550 ℃ for 10 minutes under nitrogen.
(evaluation of the number of hydroxyl groups after Heat treatment)
After peeling the polyimide resin substrate of the laminate subjected to heat treatment at 450 ℃ for 60 minutes under nitrogen, the number of hydroxyl groups in the silicone resin layer was evaluated by microscopic infrared spectroscopy analysis, and it was confirmed that the spectral intensity due to the hydroxyl groups was lower than that before the heat treatment.
< example 3 >
A laminate was produced in the same manner as in example 1 except that a silicon wafer (Si wafer) was used as a support base material, and peel strength and the like were performed. The silicon wafer was cleaned with pure water and then used by subjecting the laminated surface to corona treatment. It was confirmed by microscopic infrared spectroscopic analysis that hydroxyl groups (OH groups) were present on the surface of the silicon wafer before lamination (hereinafter, the same applies).
< example 4 >
A laminate was produced in the same manner as in example 1 except that a polyimide film "UPILEX 25S" manufactured by yukeh corporation was used as the polyimide resin substrate, and the peel strength and the like were evaluated.
< example 5 >
A laminate was produced in the same manner as in example 1 except that a gas barrier film was formed in advance on the surface of the polyimide resin substrate to which the curable composition 1 was applied, and the peel strength and the like were evaluated.
The gas barrier film was formed by sputtering so that the thickness of the SiNx film was 300 nm.
< example 6 >
A laminate was produced in the same manner as in example 1 except that a gas barrier film was formed in advance on the side of the polyimide resin substrate opposite to the side on which the curable composition 1 was applied, and the peel strength and the like were evaluated.
The gas barrier film was formed by sputtering so that the thickness of the SiNx film was 300 nm.
< example 7 >
A laminate was produced in the same manner as in example 1 except that gas barrier films were formed on both surfaces of a polyimide resin substrate in advance, and the peel strength and the like were evaluated.
The gas barrier film was formed on both surfaces by sputtering so that the thickness of the SiNx film was 300 nm.
< example 8 >
(preparation of curable Silicone 3)
The organohydrogensiloxane and the alkenyl-containing siloxane were mixed to obtain curable silicone 3. The curable silicone 3 had a composition in which all of the units D were present, all of the organic groups were methyl groups, the molar ratio of all alkenyl groups to hydrogen atoms bonded to all silicon atoms (hydrogen atoms/alkenyl groups) was 0.9, and the average number of OX groups was 0.
(preparation of curable composition 3)
A silicon compound (1 part by mass) having an acetylenic unsaturated group represented by the following formula (1) was mixed with the curable silicone 3(100 parts by mass), and a platinum catalyst was incorporated so that the content of platinum element was 100ppm, to obtain a mixture B.
HC≡C－C(CH3)2－O－Si(CH3)3(1)
The mixture B (50g), zirconium tetra-n-propoxide as a metal compound ("Organics ZA-45", manufactured by MatsumotoFine Chemical Co., Ltd., metal content 21.1%) (0.24g), and PMX-0244 (manufactured by Toray Dow Corning Co., Ltd.) (50g) as a solvent were mixed, and the obtained mixture was filtered through a filter having a pore diameter of 0.45. mu.m, to obtain a curable composition 3.
(preparation of laminate)
Using the prepared curable composition 3, a laminate was produced in the same manner as in example 1. The thickness of the silicone resin layer was 10 μm.
The absence of hydroxyl groups in the cured silicone resin layer was confirmed by micro infrared spectroscopy analysis.
(evaluation of peeling)
The peel strength and the like were evaluated in the same manner as in example 1.
< example 9 >
A laminate was produced in the same manner as in example 8 except that a silicon wafer was used as a support base material, and peel strength and the like were evaluated. After the silicon wafer was cleaned with pure water, the laminated surface was subjected to corona treatment.
The above evaluation results are summarized in table 1 below.
[ Table 1]
In the "peeling interface" in table 1, the "support base" means that the silicone resin layer and the support substrate are completely peeled off from each other at the interface, and the "substrate" means that the substrate and the silicone resin layer are completely peeled off from each other at the interface. In addition, "decomposition" means that the silicone resin layer is decomposed.
From the results shown in table 1, it is understood that in examples 1 to 7, the silicone resin layer was completely peeled off at the interface between the substrate and the silicone resin layer after the heat treatment at 220 ℃ and 450 ℃, and the adhesion of the silicone resin layer to the substrate was suppressed. In examples 1 and 3 to 7, since the thickness of the silicone resin layer was 10 μm and the thickness of the silicone resin layer was 4 μm, no distortion defect of the substrate due to foreign matter was observed.
On the other hand, in examples 8 to 9, the silicone resin layer peeled off at the interface between the silicone resin layer and the support base after the heat treatment at 220 ℃ and 450 ℃, and adhesion of the silicone resin layer to the substrate could not be suppressed.
In the heat treatment at 550 ℃ of examples 1,3 to 9 using the curable silicones 1 and 3, the silicone resin layer was decomposed and peeled off during heating, and therefore the peel strength could not be evaluated.
In order to measure the peel strength between the silicone resin layer and the substrate in the laminate that was not subjected to the heat treatment, a treatment for increasing the peel strength between the support base and the silicone resin layer was performed during the production of the laminate.
That is, a laminate was produced in the same manner as in example 1 except that the silicone resin layer was corona-treated and then the support base material (glass substrate "AN 100") was attached, and the laminate was evaluated for peeling without heat treatment, and as a result, the laminate was completely peeled at the interface between the substrate and the silicone resin layer, and the peel strength was 0.20N/25 mm.
Similarly, laminates were produced in the same manner as in examples 2 to 9 except that the silicone resin layer was corona-treated and then the support base was bonded, and the laminates were evaluated for peeling without heat treatment, and as a result, they were completely peeled at the interface between the substrate and the silicone resin layer. The peel strengths of the components are 0.3N/25mm or less.
Example 2 0.10N/25mm, example 3 0.20N/25mm, example 4 0.25N/25mm, example 5 0.25N/25mm, example 6 0.20N/25mm, example 7 0.25N/25mm, example 8 0.15N/25mm, example 9 0.15N/25mm
The present invention is described in detail with reference to specific embodiments, and it is apparent to those skilled in the art that various changes and modifications can be added without departing from the spirit and scope of the present invention.
The present application is based on japanese patent application 2018-005558, filed on 17.1.2018, the content of which is incorporated herein by reference.
Description of the symbols
10 laminated body
12 supporting substrate
14 Silicone resin layer
Surface of 14a Silicone resin layer
16 base plate
16a first main surface of the substrate
16b the 2 nd main surface of the substrate
18 support substrate with silicone resin layer
20 parts for electronic equipment
22-layered body with component for electronic device
24 substrate with parts (electronic equipment)
Claims (17)
1. A laminate comprising a support base having a hydroxyl group on the surface thereof, a silicone resin layer having a hydroxyl group, and a substrate in this order,
the substrate is a polyimide resin substrate or a laminated substrate having at least 1 layer each of a polyimide resin substrate and a gas barrier film,
the peel strength between the silicone resin layer and the substrate is greater than the peel strength between the support substrate and the silicone resin layer.
2. The laminate of claim 1, wherein the support substrate is a glass plate or a silicon wafer.
3. The laminate according to claim 1 or 2, wherein the substrate is the laminate substrate,
the gas barrier film of the laminate substrate is a gas barrier film made of an inorganic material.
4. The laminate according to claim 1 to 3, wherein a plurality of the substrates and the silicone resin layers are disposed on 1 of the support substrates.
5. The laminate according to claim 1 to 4, wherein the difference in thermal expansion coefficient between the polyimide resin substrate and the support base material is 0 to 90 × 10-6/℃。
6. The laminate according to claim 1 to 5, wherein the thickness of the silicone resin layer is greater than 1 μm and 100 μm or less.
7. The laminate according to claim 1 to 6, wherein the peel strength between the silicone resin layer and the substrate is 0.3N/25mm or less.
8. The laminate according to claim 1 to 7, wherein the silicone resin constituting the silicone resin layer contains at least trifunctional organosiloxy units in a proportion of 20 to 90 mol% based on the total organosiloxy units.
9. The laminate according to claim 1 to 8, wherein a surface of the silicone resin layer on the substrate side has a surface roughness Ra of 0.1 to 20 nm.
10. The laminate according to any one of claims 1 to 9, wherein the laminate substrate each having at least 1 layer each of a polyimide resin substrate and a gas barrier film has, laminated in order from a side close to the silicone resin layer:
polyimide resin substrate/gas barrier film,
Gas barrier film/polyimide resin substrate, or
Gas barrier film/polyimide resin substrate/gas barrier film.
11. A method for producing the laminate according to claim 1 to 10, comprising:
a resin layer forming step of forming the silicone resin layer on the substrate;
and a laminating step of laminating the support base material on a surface of the silicone resin layer to obtain the laminate.
12. The method for producing a laminate according to claim 11, wherein the resin layer forming step comprises the steps of: a curable composition containing a curable silicone to be a silicone resin is applied to the 1 st main surface of the substrate, the solvent is removed as necessary to form a coating film, and the curable silicone in the coating film is cured to form a silicone resin layer.
13. The method for producing a laminate according to claim 12, wherein the curable silicone is a mixture of an organoalkenylpolysiloxane and an organohydrogenpolysiloxane.
14. The method for producing a laminate according to claim 12, wherein the curable silicone is a hydrolyzable silicone compound or a partial hydrolytic condensate obtained by subjecting a hydrolyzable silicone compound to a hydrolytic condensation reaction.
15. A method for manufacturing an electronic device includes the steps of:
a component forming step of forming an electronic device component on a surface of the substrate of the laminate according to any one of claims 1 to 10 to obtain a laminate having an electronic device component;
and a separation step of removing the silicone resin layer-carrying support base material including the support base material and the silicone resin layer from the laminate with the electronic device component to obtain an electronic device having the substrate and the electronic device component.
16. The method of manufacturing an electronic device according to claim 15, wherein the member forming step is a step including a heat treatment.
17. The method of manufacturing an electronic device according to claim 15 or 16, wherein the heat treatment is performed at 50 ℃ to 600 ℃ for 1 to 120 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310861400.0A CN117021715A (en) | 2018-01-17 | 2019-01-11 | Laminate, method for producing laminate, and method for producing electronic device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-005558 | 2018-01-17 | ||
| JP2018005558 | 2018-01-17 | ||
| PCT/JP2019/000797 WO2019142750A1 (en) | 2018-01-17 | 2019-01-11 | Laminate, method for manufacturing laminate, and method for manufacturing electronic device |
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| CN202310861400.0A Division CN117021715A (en) | 2018-01-17 | 2019-01-11 | Laminate, method for producing laminate, and method for producing electronic device |
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| CN111629899A true CN111629899A (en) | 2020-09-04 |
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| CN202310861400.0A Pending CN117021715A (en) | 2018-01-17 | 2019-01-11 | Laminate, method for producing laminate, and method for producing electronic device |
| CN201980008601.8A Pending CN111629899A (en) | 2018-01-17 | 2019-01-11 | Laminate, method for manufacturing laminate, and method for manufacturing electronic device |
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| JP (2) | JP7099478B2 (en) |
| KR (1) | KR20200110329A (en) |
| CN (2) | CN117021715A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117279780A (en) * | 2021-04-22 | 2023-12-22 | Ａｇｃ株式会社 | Laminated substrate, laminated body manufacturing method, laminated body with member for electronic device, and electronic device manufacturing method |
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| CA3089797C (en) | 2018-06-29 | 2022-11-22 | Crrc Qiqihar Rolling Stock Co., Ltd. | Railway vehicle, coupler, and coupler body thereof |
| CN108839666B (en) | 2018-06-29 | 2019-11-08 | 中车齐齐哈尔车辆有限公司 | Hitch, hook bolt and coupler body |
| JP7103163B2 (en) * | 2018-10-31 | 2022-07-20 | Ａｇｃ株式会社 | Laminates, continuity check methods, and electronic device manufacturing methods |
| KR102510793B1 (en) * | 2020-01-31 | 2023-03-17 | 에이지씨 가부시키가이샤 | Laminated substrate, method for manufacturing laminate, laminate, laminate with components for electronic devices, method for manufacturing electronic devices |
| JP7140158B2 (en) * | 2020-01-31 | 2022-09-21 | Ａｇｃ株式会社 | LAMINATED SUBSTRATE, METHOD FOR MANUFACTURING LAMINATED BODY, LAMINATED BODY, LAMINATED BODY WITH ELECTRONIC DEVICE MEMBER, METHOD FOR MANUFACTURING ELECTRONIC DEVICE |
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| JP2022119800A (en) | 2022-08-17 |
| TW201934335A (en) | 2019-09-01 |
| JPWO2019142750A1 (en) | 2021-01-14 |
| WO2019142750A1 (en) | 2019-07-25 |
| JP7310973B2 (en) | 2023-07-19 |
| CN117021715A (en) | 2023-11-10 |
| KR20200110329A (en) | 2020-09-23 |
| JP7099478B2 (en) | 2022-07-12 |
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