CN111606297B

CN111606297B - Device structure, method of manufacturing the same, filter, and electronic apparatus

Info

Publication number: CN111606297B
Application number: CN202010347888.1A
Authority: CN
Inventors: 张全德; 庞慰; 陈士强
Original assignee: ROFS Microsystem Tianjin Co Ltd
Current assignee: ROFS Microsystem Tianjin Co Ltd
Priority date: 2020-04-28
Filing date: 2020-04-28
Publication date: 2021-04-16
Anticipated expiration: 2040-04-28
Also published as: CN111606297A; WO2021218967A1

Abstract

The invention relates to a device structure and a method of manufacturing the same, the device structure comprising: first and second substrates; an encapsulation layer disposed between the opposing first and second substrates to define an encapsulation space between the first and second substrates; the MEMS device is arranged on the first substrate and/or the second substrate and is positioned in the packaging space, wherein: the packaging layer comprises an inner sealing layer and an outer sealing layer, the outer side of the inner sealing layer is provided with an annular groove between the first substrate and the second substrate, the annular groove is opened towards the outer side, and the outer sealing layer is a metal layer and covers the whole outer side of the inner sealing layer; and the outer sealing layer includes only an in-groove portion located in the annular groove, or the outer sealing layer includes an in-groove portion located in the annular groove and a side surface portion covering only a part of a side surface of the first substrate and/or the second substrate, and the first substrate or the second substrate is provided with a conductive portion electrically connected with the in-groove portion. The invention also relates to a filter and an electronic device.

Description

Device structure, method of manufacturing the same, filter, and electronic apparatus

Technical Field

Embodiments of the present invention relate to the field of semiconductors, and in particular, to a device structure and a device packaging method, a filter having the device structure, and an electronic device having the filter or the device structure.

Background

Most of the existing Acoustic devices are Micro-Electro-Mechanical systems (MEMS) devices, such as Film Bulk Acoustic Resonator (FBAR). The existing acoustic device packaging structure utilizes a seal ring to assemble a cover layer (packaging substrate) and a substrate (device substrate) together to form an internal cavity or packaging space, and the internal cavity helps performance improvement and reliable work of the device. However, when the existing sealing ring fluctuates in the process, a cavity is formed at the material interface of the sealing ring or in the sealing ring, so that the sealing failure is caused.

A package structure 100 of a conventional acoustic device is shown in fig. 1. The substrate 1, the cover layer 4, the first sealing ring material 2 and the second sealing ring material 3 surround and generate an inner cavity 6, and the acoustic device 5 is manufactured on the main surface of the substrate 1 or the cover layer 4 and is positioned in the inner cavity 6. When the adhesion and bonding between the first gasket material 2 and the second gasket material 3 are poor, a void 7 is present at the interface between the first gasket material 2 and the second gasket material 3. In addition, the first gasket material or the second gasket material may have voids, defects, and the like therein, which may develop and become large in long-term use. The presence of the voids/defects described above significantly degrades the quality of the seal ring, which may cause seal failure.

Fig. 2 is a scanning electron microscope photograph of a cross section of a package structure with a poor actual sealing effect, and it can be seen that a large number of cavities (indicated by arrows) appear at the interface of two materials of the sealing ring and form a through channel, so that the sealing fails and the effect of isolating environmental moisture is not achieved.

In addition, in the existing structure, all spaces between the cover layer and the substrate except for the inner cavity are filled or covered by the plastic packaging material during packaging, so that the heat dissipation capability of the structure is poor.

Disclosure of Invention

The present invention has been made to solve or alleviate at least one aspect of the technical problems in the prior art, such as improving the packaging effect for a MEMS device.

According to an aspect of an embodiment of the present invention, there is provided a device structure, comprising:

a first substrate and a second substrate disposed in spaced apart opposition to each other;

an encapsulation layer disposed between the first and second substrates to define an encapsulation space between the first and second substrates, the encapsulation space having an encapsulation height;

a MEMS device disposed on the first substrate and/or the second substrate and located in the packaging space,

wherein:

the packaging layer comprises an inner sealing layer and an outer sealing layer, an annular groove is formed in the outer side of the inner sealing layer and is formed between the first substrate and the second substrate, the annular groove is opened to the outside, the outer sealing layer is a metal layer and covers the whole outer side of the inner sealing layer, and the distance between the opening side of the annular groove and the packaging height is not smaller than the thickness direction of the annular groove; and is

The outer seal layer includes only an in-groove portion located within the annular groove, or the outer seal layer includes an in-groove portion located within the annular groove and a side surface portion covering only a part of a side surface of the first substrate and/or the second substrate, the first substrate or the second substrate being provided with a conductive portion electrically connected to the in-groove portion.

Embodiments of the invention also relate to a method of manufacturing a device structure, comprising the steps of:

providing a first substrate and a second substrate, wherein the opposite sides of the two substrates are provided with packaging materials, at least one substrate is provided with a conductive part, and the first substrate and/or the second substrate are/is provided with MEMS devices;

the MEMS device packaging method comprises the steps that a first substrate is opposite to a second substrate, corresponding packaging materials form an inner sealing layer, the first substrate and the second substrate define a packaging space, the MEMS device is located in the packaging space, an annular groove is formed in the outer side of the inner sealing layer and between the two substrates, the annular groove is open to the outside, and the conducting portion is provided with a conducting path leading to the annular groove; and

and electrifying the conductive part, and forming an outer sealing layer by using an electroplating process, wherein the outer sealing layer only comprises an in-groove part positioned in the annular groove, or the outer sealing layer comprises an in-groove part positioned in the annular groove and a side surface part only covering a part of the side surface of the first substrate and/or the second substrate.

Embodiments of the present invention also relate to a filter comprising at least one of the above device structures.

Embodiments of the invention also relate to an electronic device comprising a filter or device structure as described above.

Drawings

These and other features and advantages of the various embodiments of the disclosed invention will be better understood from the following description taken in conjunction with the accompanying drawings, in which like reference characters designate like parts throughout, and in which:

fig. 1 is a schematic cross-sectional view of a package structure of a known acoustic device, and a right side in fig. 1 is an enlarged schematic view of a circled portion in a left side portion in fig. 1;

FIG. 2 is an enlarged schematic view of a seal portion of a poorly sealed product;

FIG. 3 is a cross-sectional schematic view of a package structure of a MEMS device in accordance with an exemplary embodiment of the present invention;

FIG. 4 is a cross-sectional schematic view of a package structure of a MEMS device in accordance with another exemplary embodiment of the present invention;

FIG. 5 is a cross-sectional schematic view of a package structure of a MEMS device in accordance with yet another exemplary embodiment of the invention;

FIG. 6 is a cross-sectional schematic view of a package structure of a MEMS device in accordance with yet another exemplary embodiment of the present invention;

FIG. 7 is a cross-sectional schematic view of a package structure of a MEMS device in accordance with yet another exemplary embodiment of the present invention;

FIG. 8 is a cross-sectional schematic view of a package structure of a MEMS device in accordance with yet another exemplary embodiment of the present invention;

FIG. 9 is a cross-sectional schematic view of a package structure of a MEMS device in accordance with yet another exemplary embodiment of the present invention;

FIG. 10 is a cross-sectional schematic view of a package structure of a MEMS device in accordance with yet another exemplary embodiment of the present invention;

FIG. 11 is a cross-sectional schematic view of a package structure of a MEMS device in accordance with yet another exemplary embodiment of the present invention;

FIG. 12 is a cross-sectional schematic view of a package structure of a MEMS device in accordance with yet another exemplary embodiment of the present invention;

FIG. 13 is a flow chart illustrating packaging a MEMS device according to one exemplary embodiment of the present invention;

fig. 14-23 are process diagrams illustrating a packaged MEMS device according to an exemplary embodiment of the invention.

Detailed Description

The technical scheme of the invention is further specifically described by the following embodiments and the accompanying drawings. In the specification, the same or similar reference numerals denote the same or similar components. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the general inventive concept of the present invention and should not be construed as limiting the invention.

The package structure of the MEMS device according to the present invention is exemplarily described below with reference to fig. 3 to 12.

In fig. 3-12, the reference numerals are illustratively described as follows:

1: the device substrate, which may be selected from monocrystalline silicon, gallium arsenide, sapphire, quartz, etc., may be provided with an acoustic device, provided with conductive vias 11 (not shown in some of the figures).

2: the first seal ring material or the first seal ring comprises at least one layer of material, which is not limited to conductive metal (such as gold, copper, aluminum, etc.), but may also comprise other non-conductive materials (resin, plastic, etc.).

3: the second seal ring material or the second seal ring comprises at least one layer of material, which is not limited to conductive metal (such as gold, copper, aluminum, etc.), but may also comprise other non-conductive materials (resin, plastic, etc.). The first and second gasket materials are preferably bonded or covered, and may be the same or different. The first seal ring material and the second seal ring material together form an inner seal ring or inner seal layer.

4: a cover layer or a package substrate, which may be made of monocrystalline silicon, gallium arsenide, sapphire, quartz, etc., on which an acoustic device (not shown) may be fabricated, and which may be provided with conductive vias (not shown).

5: the acoustic device can be selected from acoustic devices such as SAW (surface acoustic wave) type or BAW (bulk acoustic wave) type, resonators, filters, duplexers, multiplexers and the like, and the acoustic device can comprise bulk acoustic wave resonators or surface acoustic wave resonators.

6: the inner cavity is formed by surrounding a substrate 1, a cover layer 4, a first sealing ring material 2 and a second sealing ring material 3, and forms a packaging space.

8: the outer sealing ring or the outer sealing layer can be realized by an electroplating process and can be a single layer or multiple layers, and the outer sealing ring covers the outer side of the whole inner sealing ring. The material is selected from molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or the compound of the above metals or the alloy thereof.

9: the outer edge of the device substrate 1 or the package substrate 4 is formed when multiple devices are fabricated simultaneously, or when individual devices are singulated by dicing.

h1 the distance from the device substrate 1 to the package substrate 4, i.e. the height of the inner cavity 6, is also the sum of the thicknesses of the materials of the first and second sealing rings (the first and second sealing rings are stacked in the thickness direction).

G: and an annular groove located between the device substrate 1 and the package substrate 4 on the outer side of the inner seal ring. The annular groove G is open to the outside.

h 2: the distance of the ring groove G opening on the outside.

2': the plating seed layer is made of copper, aluminum, gold, silver or their alloy.

10: the plating seed layer is made of copper, aluminum, gold, silver or their alloy.

11: the conductive through hole can be made of metal materials, such as molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium, or a composite of the above metals or an alloy thereof.

12: the conductive bonding pad can be made of the current common bonding material system, such as copper, aluminum, gold, silver and the like, and composite materials or alloy materials of the metals.

13: and (7) solder balls.

14: the substrate can be made of FR-4, LTCC, HTCC and the like, and can comprise more than two conductive layers, a dielectric layer between the two conductive layers and the like.

15: the conducting lead wire can be made of copper, aluminum, gold, silver and the like or alloy thereof.

16: the primer is made of insulating materials and can be made of plastics or epoxy resin.

17: packaging material, optionally ceramic, plastic, epoxy, etc., or combinations thereof.

18: the wire can be made of copper, aluminum, gold, silver or the like or alloy thereof.

Fig. 3 is a schematic cross-sectional view of a package structure of a MEMS device according to an exemplary embodiment of the present invention, which is different from fig. 1 in that an outer sealing ring 8 is further plated on the periphery of the sealing ring shown in fig. 1, where the outer sealing ring 8 may be one or more layers. The thickness d of the outer sealing ring 8 can vary within wide limits, i.e. either inside or outside the outer edge 9 of the substrate 1 or the cover layer 4, depending on the control of the plating time. The electrodes of the plated outer sealing ring 8 need to be electrically connected to some conductive part of the device, not shown in fig. 3.

In fig. 3, the distance h2 in the thickness direction of the opening side of the annular groove G is equal to the package height h 1.

As shown in fig. 3, the outer sealing ring only includes the in-groove portion located within the annular groove G and does not fill the entire annular groove. However, the present invention is not limited thereto, and for example, the portion of the outer seal ring located within the annular groove may fill the entire annular groove G without contact with the side surface of the base or without wall climbing. In the present invention, the phrase "the outer seal ring includes only the in-groove portion located in the annular groove G" includes a case where the outer seal ring is located only in the annular groove (including partial filling and complete filling), and also includes a case where the outer seal layer has a portion protruding from the annular groove and the portion has no contact with the side surface of the substrate or has no wall climbing phenomenon. In the present invention, the outer seal ring may further include an in-groove portion located within the annular groove G and a side surface portion covering (and having a wall-climbing phenomenon) only a part of the side surface of the device substrate and/or the package substrate, as shown in fig. 12 mentioned later.

In fig. 3, although not shown, a conductive through hole provided in the device substrate or the package substrate is electrically connected to the in-groove portion of the outer seal ring as a conductive portion.

Fig. 4 is a schematic cross-sectional view of a package structure of a MEMS device according to another exemplary embodiment of the invention. Fig. 4 is different from fig. 3 in that the package substrate 4 is etched, so that the distance h2 (i.e., the distance of the annular groove opening to the outside) in the thickness direction between the package substrate 4 and the device substrate 1 outside the original sealing ring is increased, as shown in fig. 4, and h2 is larger than h 1. When h1 is small in fig. 3, the plated metal may not fill properly because the dicing process may cause the gap between the device substrate 1 and the package substrate 4 to be clogged with the residue. In the embodiment shown in fig. 4, the distance h2 between the outer openings of the annular grooves is increased, which is beneficial to prevent or reduce the blockage of the gap between the device substrate 1 and the package substrate 4 by the residue in combination with the later-mentioned residue removing process by using the etching solution.

Fig. 5 is a schematic cross-sectional view of a package structure of a MEMS device according to yet another exemplary embodiment of the invention. The embodiment shown in fig. 5 differs from that shown in fig. 4 in that the device substrate 1 is also etched, so that outside the original sealing ring, the distance h2 of the annular groove opening to the outside is increased, i.e. h2 is greater than h 1. In the embodiment shown in fig. 5, the distance h2 between the outer openings of the annular grooves is further increased, which is beneficial to prevent or reduce the blockage of the gap between the device substrate 1 and the package substrate 4 by the residue in combination with the later-mentioned residue removing process by using the etching solution.

Fig. 6 is a schematic cross-sectional view of a package structure of a MEMS device according to still another exemplary embodiment of the invention. Fig. 6 is different from fig. 5 in that, in fig. 6, the etched portions of the device substrate 1 and the package substrate 4 are slopes, which improves the coverage and bonding area of the plating layer, and is beneficial to improving the bonding quality between the outer seal ring 8 and the device substrate 1 and the package substrate 4.

Fig. 7 is a schematic cross-sectional view of a package structure of a MEMS device according to still another exemplary embodiment of the invention. Fig. 7 is different from fig. 6 in that the etched portions of the device substrate 1 and the package substrate 4 are in a multi-slope step shape, so that the coverage and the bonding area of the plating layer can be improved, and the bonding quality between the outer seal ring 8 and the device substrate 1 and the package substrate 4 can be improved.

It should be noted that, unlike fig. 6 or 7, a slope or a step surface is etched only on the substrate on one side.

The shape of the etched portion of the device substrate 1 and the package substrate 4 is not limited in the present invention as long as h2 is greater than h1, which is advantageous for maximizing the metal plating coverage and bonding capability.

Fig. 8 is a schematic cross-sectional view of a package structure of a MEMS device according to still another exemplary embodiment of the invention. The embodiment shown in fig. 8 is different from that shown in fig. 7 in that the second sealing ring material 3 on the package substrate 4 is an insulating material, and a plating seed layer 10 needs to be formed on the etching step of the package substrate 4. If the seed layer 10 is not plated, voids may occur between the package substrate 4 and the outer sealing ring 8 when the outer sealing ring 8 is plated, resulting in a sealing failure.

As shown in fig. 8, the first sealing ring material 2 on the device substrate 1 is a metal material, but a plating seed layer 2' is also formed on the substrate etching step as an extension of the first sealing ring material 2.

The embodiment shown in fig. 8 takes full advantage of the ductility of the insulating material, such as resin, and reduces the stringent requirements for the seal ring material and process.

Note that the plating seed layer 2 ' may not be provided, and in the case where the plating seed layer 2 ' is provided, the plating seed layer 2 ' may not be in contact with the first ring of sealing material 2.

In a further embodiment, the plating seed layer 10 may not be provided, and in this case, the filled plating metal may fill the annular groove in the case of a longer plating time.

Fig. 9 is a schematic cross-sectional view of a package structure of a MEMS device according to still another exemplary embodiment of the invention. The embodiment shown in fig. 9 is different from that shown in fig. 8 in that the second sealing ring material 3 on the package substrate 4 is an insulating material, which is not stacked with the first sealing ring material 2 on the device substrate 1, but is horizontally disposed, and has a different height, the height difference between the two is h3, and the size of h3 may also be 0, but should not be so large, and is generally in the range of 0-10 μm, so as not to require a long time for electroplating metal filling.

The second sealing ring material 3 serves to initially seal the internal cavity 6, and the gap between the plating seed layer 10 on the package substrate 4 and the second sealing ring material 3 can be completely filled by electroplating. The embodiment of fig. 9 also serves to maximize the use of the ductility of the insulating material, such as resin, and reduces the stringent requirements for the seal ring material and process.

Fig. 10 is a schematic cross-sectional view of a package structure of a MEMS device according to still another exemplary embodiment of the invention. Fig. 10 shows a substrate 14 electrically connected to the device substrate 1, for example, based on the structure shown in fig. 8, in which a conductive lead 15 is provided in the substrate 14, and the conductive pad 12 on the lower side of the device substrate 1 is electrically connected to the conductive lead 15 through a solder ball 13. In the embodiment shown in fig. 10, the underfill 16 is filled between the device substrate 1 and the substrate 14. The plated electrical connections are shown in fig. 10, namely from conductive leads 15, to solder balls 13, to conductive pads 12, to conductive vias 11, to wires 18, to the first gasket material 2 of conductive material. In fig. 10, a conductive through hole 11 electrically connected to the first seal ring material 2 is provided inside the annular groove or within the internal cavity 6. The conductive vias 11 also include the remaining conductive vias that function to electrically connect to the device and not to the sealing ring.

Fig. 11 is a schematic cross-sectional view of a package structure of a MEMS device according to still another exemplary embodiment of the invention. The embodiment shown in fig. 11 differs from the structure shown in fig. 10 in that, in fig. 11, the conductive through hole 11 electrically connected to the first seal ring material 2 is provided within the width of the annular groove.

Fig. 12 is a schematic cross-sectional view of a package structure of a MEMS device according to still another exemplary embodiment of the invention. The embodiment shown in fig. 12 differs from the structure shown in fig. 10 in that in fig. 12, the conductive through-hole 11 electrically connected to the first seal ring material 2 is provided at the outer edge of the annular groove, i.e., the conductive through-hole 11 is in an exposed half-hole state in fig. 12. The number of the conductive through holes electrically connected to the seal ring is not limited to 1, and may be plural, and may be a combination of the above-described plural kinds of conductive through holes.

Fig. 3 to 12 show only the case where two kinds of seal rings on the inner side are horizontally juxtaposed and the case where they are stacked in the thickness direction, but the present invention is not limited thereto, and as can be appreciated by those skilled in the art, the structure of providing the inner side seal ring may be a combination of longitudinal stacking and horizontal juxtaposition, which are within the scope of the present invention.

In addition, in the present invention, in the case that there is a step in the groove wall of the annular groove, the groove wall may be a slope step, a vertical step, or a combination of a step and a slope, which are all within the protection scope of the present invention.

In the embodiment shown in fig. 10-12, the acoustic assembly is mounted on the substrate 14 in a flip-chip manner, but the invention is not limited thereto, and the acoustic assembly may be mounted on the substrate 14 in a wire bonding manner or by bonding wires, which are within the scope of the invention.

In the present invention, in the case of the seal rings, in which the first seal ring and the second seal ring of the two substrates are opposed to each other (see fig. 3 to 8, etc.), (1) if both of the two seal rings are made of a non-conductive material, a plating seed layer needs to be provided on the wall of the annular groove on the substrate side where at least one of the seal rings is located, and a plating lead (including, for example, a conductive through hole, etc.) needs to be electrically connected to one of the plating seed layers; (2) if one seal ring is made of a non-conductive material and the other seal ring is made of a conductive material, the wall of the annular groove on the non-conductive seal ring side may or may not be provided with a plating seed layer (in the case of providing, in a further embodiment, the plating seed layer is also connected to the non-conductive seal ring), while the wall of the annular groove on the conductive seal ring side does not necessarily need to be provided with a corresponding plating seed layer, and a plating lead may be electrically connected to the conductive seal layer and/or may be electrically connected to the provided plating seed layer, and the electrical connection may also be connected to the conductive seal layer via the plating seed layer when the plating seed layer is provided; (3) in the case where both the two seal layers are conductive seal layers, the plating seed layer may not be provided, and the plating lead may be electrically connected to only one conductive seal layer, or may be electrically connected to the corresponding plating seed layer in the case where the plating seed layer is provided.

In the present invention, if an inner seal ring of a non-conductive material and an outer seal ring of a conductive material are juxtaposed in a transverse direction, in the case where the outer seal ring connects and seals two substrate surfaces, a plating seed layer may not be provided, and in the case where the outer seal ring is spaced apart from one substrate, for example, a package substrate, a plating seed layer may be provided on a corresponding wall (for example, an upper wall in the drawing) of the annular groove (in an alternative embodiment, it may not be provided), and further, in the case of the provision, the plating seed layer is connected to the inner seal ring via the gap, and another wall (for example, a lower wall in the drawing) of the annular groove is optionally provided with a plating seed layer.

In the present invention, the plating lead wire is connected to the conductive seal ring (which defines the inner side wall of the annular groove) without providing a plating seed layer; in the case where the plating seed layer is provided, the plating lead may be connected to one of the plating seed layer and the conductive seal ring.

A method of packaging a MEMS device is illustrated with reference to fig. 13-23. FIG. 13 is a flow chart illustrating packaging a MEMS device according to one exemplary embodiment of the present invention; fig. 14-23 are process diagrams illustrating a packaged MEMS device according to an exemplary embodiment of the invention.

Fig. 13 shows the processing steps, the basic process steps are similar to conventional device fabrication except for step 907 device assembly and residue removal, which is an optional process, and step 909 plating. Step 908 fill underfill is also an optional process and is replaced with the process sequence of step 909 plating.

The processing steps of the present invention will be specifically described below by taking the structure shown in fig. 8 as an example. In this embodiment, the conductive via for electrically connecting the acoustic device and the outer sealing ring may be disposed in the device substrate or the package substrate, and different leading manners should be included in the present invention.

Fig. 14 shows an embodiment of the substrate fabrication (i.e., device substrate fabrication) in step 901, as shown in fig. 14, the acoustic device 5, the first sealing ring material 2, and the like are already fabricated on the device substrate 1, and the blind via 11 is also fabricated on the device substrate 1.

Fig. 15 illustrates an embodiment of the cap layer fabrication (i.e., package substrate fabrication) in step 902. as shown in fig. 15, the second sealing ring material 3 and the plating seed layer 10 have been fabricated on the package substrate 4.

Fig. 16 illustrates an embodiment of step 903 wafer bonding (i.e., two substrate opposing bonding) with the package substrate 4 aligned for flip-chip bonding to the device substrate 1, and the first sealing ring material aligned with the second sealing ring material to form a sealing ring or layer. As shown in fig. 16, an internal cavity or enclosure 6 is formed.

Fig. 17 shows an embodiment of thinning the wafer and making the bonding pads 904, in which the thinning is performed by CMP (chemical mechanical polishing), and the blind vias are exposed by CMP to form the conductive vias 11 and electrically connected to the conductive bonding pads 12.

Fig. 18 is an example of dicing at step 905, in which the bare devices are separated.

Fig. 19 illustrates an embodiment of device mounting and residue removal in step 907. in step 907, a plurality of bare devices of fig. 18 are mounted on a substrate 14 using solder balls 13. At this time, the plating seed layer for the outer sealing ring is connected together by using the through hole 11, the conductive pad 12 of the device substrate 1, the solder ball 13 and the conductive lead 15 in the substrate 14, so that the directional plating operation of the outer sealing ring can be realized by applying power to the conductive lead 15 of the substrate 14.

In the embodiment of step 908 of underfill dispensing, the surface of the substrate 14 and the solder balls 13 are protected from being plated or eroded by the plating solution by the underfill 16 as shown in FIG. 20. Since this step is optional, it is possible to plate the surface pads of the substrate 14, the solder balls 13, and the conductive pads 12 on the lower surface of the device substrate 1 if this step is not present or if the order of this step is reversed with respect to the plating 909 step.

Fig. 21 shows an embodiment of electroplating at step 909, the outer seal ring 8 is completely electroplated, and by controlling the electroplating time, the filling amount of the outer seal ring 8 can be controlled, which may extend beyond the scribe edge of the substrate, and fig. 21 shows the case of not extending.

Fig. 22 illustrates an embodiment of the molding step 910 in which the entire device is protected by the encapsulant material 17.

Fig. 23 illustrates an embodiment of the separation of a single device in step 911. in step 911, a single device is separated from the entire substrate to form the structure shown in fig. 23.

In the invention, the sealing ring is directly and accurately electroplated and reinforced, and electroplating operation can be carried out after the device is assembled, so that the operability is strong, the process is simple, and the cost is low.

By utilizing the structure of the electroplated sealing ring, one or more layers of metal can be electroplated and filled on the periphery of the sealing ring with the existing structure, so that the reinforcement effect on the existing sealing ring is achieved, and the advantages of heat dissipation capability and power capacity improvement brought by replacing plastic packaging materials with the metal can be obtained.

It is to be noted that, in the present invention, each numerical range, except when explicitly indicated as not including the end points, can be either the end points or the median of each numerical range, and all fall within the scope of the present invention.

The structural device using the above-described package structure can be used for a filter, and can also be used for electronic equipment including various electronic devices such as a filter, a duplexer, a multiplexer, and the like. The electronic device can further include but is not limited to intermediate products such as a radio frequency front end and a filtering and amplifying module, and terminal products such as a mobile phone, WIFI and an unmanned aerial vehicle.

Based on the above, the invention provides the following technical scheme:

1. a device structure, comprising:

wherein:

2. The device structure of claim 1, wherein:

the distance of the opening side of the annular groove in the thickness direction is greater than the package height.

3. The device structure of claim 2, wherein:

the annular groove is a flared annular groove extending from the outer side of the inner seal layer to the outer side boundaries of the first substrate and the second substrate, and at least one side of the annular groove in the thickness direction is provided with a slope or a step slope.

4. The device structure of claim 1, wherein:

the MEMS device includes a bulk acoustic wave resonator.

5. The device structure of claim 1, wherein:

the distance of the opening side of the annular groove in the thickness direction is in the range of 2 to 200 μm, and the package height is in the range of 1 to 50 μm.

6. The device structure of claim 1, wherein:

the conductive part comprises a conductive through hole arranged in the corresponding substrate; or

The conductive part comprises a conductive lead exposed out of the side face of the substrate where the conductive part is located, and the outer sealing layer comprises an outer part covering the conductive lead.

7. The device structure of claim 6, wherein:

the conductive through hole is arranged on the outer side of the inner sealing layer and is electrically connected with the in-groove part of the outer sealing layer; or

The conductive via is disposed inside an inner seal layer having a conductive portion defining an inside boundary of the annular groove to be electrically connected with the in-groove portion, the conductive via being electrically connected with the conductive portion of the inner seal layer; or

The conductive via is disposed so as to overlap with the inner sealing layer in a thickness direction of the device structure, and the inner sealing layer has a conductive portion defining an inner boundary of the annular groove to be electrically connected to the in-groove portion, the conductive via being electrically connected to the conductive portion of the inner sealing layer.

8. The device structure of claim 1, wherein: the groove walls of the annular groove defined by the first substrate are provided with a first plating seed layer and/or the groove walls of the annular groove defined by the second substrate are provided with a second plating seed layer.

9. The device structure of claim 8, wherein:

the conductive portions are electrically connected to the corresponding plating seed layer; and/or

The inner seal layer including an electrically conductive seal portion defining an inner sidewall of the annular groove, the electrically conductive portion being electrically connected with the electrically conductive seal portion; and/or

The inner sealing layer includes conductive sealing portions defining inner side walls of the annular groove, the conductive portions are electrically connected to one plating seed layer, and the plating seed layer electrically connected to the conductive portions is connected or not connected to the corresponding conductive sealing portion.

10. The device structure of claim 8, wherein:

the inner sealing layer includes a first sealing layer disposed on the first substrate extending from the first substrate toward the second substrate, and a second sealing layer disposed on the second substrate extending from the second substrate toward the first substrate, the first sealing layer and the second sealing layer being opposite to each other.

11. The device structure of claim 10, wherein:

at least one of the first and second sealing layers is a non-conductive sealing layer; and is

The groove wall of the annular groove defined by the substrate corresponding to the non-conductive sealing layer is provided with a plating seed layer, and the plating seed layer is connected to the non-conductive sealing layer or is covered by the non-conductive sealing layer.

12. The device structure of claim 8, wherein:

the inner sealant layer includes an inner sealant layer and an outer sealant layer juxtaposed in a transverse direction.

13. The device structure of claim 12, wherein:

the inner sealing layer and the outer sealing layer are non-conductive sealing layers;

the groove wall of the annular groove limited by the first substrate is provided with a first electroplating seed layer, and/or the groove wall of the annular groove limited by the second substrate is provided with a second electroplating seed layer;

the plating seed layer is connected to or covered with a portion of the outer encapsulation layer.

14. The device structure of claim 12, wherein:

the inner side sealing layer is a non-conductive sealing layer, the outer side sealing layer is a conductive sealing layer, and a gap is formed between the outer side sealing layer and the substrate on one side;

and a plating seed layer is arranged on the groove wall, which is limited by the corresponding substrate, of one side of the annular groove where the gap is positioned, penetrates through the gap and is connected to the inner side sealing layer or is covered by one part of the inner side sealing layer.

15. The device structure of claim 14, wherein:

the height of the gap in the thickness direction of the device structure is not more than 10 μm.

16. The device structure of claim 1, wherein:

the inner seal layer includes a conductive seal portion defining an inner sidewall of the annular groove, the conductive seal portion being electrically connected with the conductive portion. 17. The device structure of any of claims 1-16, further comprising:

and the packaging substrate is internally provided with a substrate lead, and the conductive part of the device structure is electrically connected with the corresponding substrate lead.

18. The device structure of claim 17, wherein:

the first substrate or the second substrate is electrically connected with the packaging substrate through a solder ball;

the device package assembly further includes an insulating layer filling a gap between the first or second substrate and the package substrate.

19. A method of manufacturing a device structure, comprising the steps of:

20. The method of claim 19, wherein:

in the step of providing the first substrate and the second substrate, a plating seed layer is provided on a substrate portion of the first substrate and/or the second substrate for defining the annular groove.

21. The method of claim 19, wherein:

before "electrifying the conductive portion, forming the outer sealing layer by using the electroplating process", the method further comprises the steps of:

providing a packaging substrate, wherein a substrate lead is arranged in the packaging substrate;

electrically connecting the conductive part disposed on the first substrate or the second substrate with the corresponding substrate lead,

wherein: the step of "energizing the conductive portions" includes energizing the corresponding substrate leads.

22. The method of claim 19, wherein:

before "electrifying the conductive portion, forming the outer sealing layer by using the electroplating process", the method further comprises the steps of: and removing residues in the annular groove.

23. A filter, comprising: at least one device structure according to any one of claims 1-18.

24. An electronic device comprising a filter according to 23 or a device structure according to any of claims 1-18.

Although embodiments of the present invention have been shown and described, it would be appreciated by those skilled in the art that changes may be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the claims and their equivalents.

Claims

1. A device structure, comprising:

wherein:

The outer seal layer includes only an in-groove portion located within the annular groove, or the outer seal layer includes an in-groove portion located within the annular groove and a side surface portion covering only a part of a side surface of the first substrate and/or the second substrate, the first substrate or the second substrate is provided with a conductive portion electrically connected to the in-groove portion, and the in-groove portion covers the entire outside of the inner seal layer.

2. The device structure of claim 1, wherein:

3. The device structure of claim 2, wherein:

4. The device structure of claim 1, wherein:

the MEMS device includes a bulk acoustic wave resonator.

5. The device structure of claim 1, wherein:

6. The device structure of claim 1, wherein:

7. The device structure of claim 6, wherein:

9. The device structure of claim 8, wherein:

10. The device structure of claim 8, wherein:

11. The device structure of claim 10, wherein:

12. The device structure of claim 8, wherein:

13. The device structure of claim 12, wherein:

14. The device structure of claim 12, wherein:

15. The device structure of claim 14, wherein:

16. The device structure of claim 1, wherein:

the inner seal layer includes a conductive seal portion defining an inner sidewall of the annular groove, the conductive seal portion being electrically connected with the conductive portion.

17. The device structure of any of claims 1-16, further comprising:

18. The device structure of claim 17, wherein:

the first base or the second base is electrically connected with the packaging substrate through a solder ball;

the device structure further includes an insulating layer filling a gap between the first base or the second base and the package substrate.

19. A method of manufacturing a device structure, comprising the steps of:

20. The method of claim 19, wherein:

21. The method of claim 19, wherein:

before the step of energizing the conductive portion and forming an outer sealing layer using an electroplating process, the method further comprises the steps of:

wherein: the step of energizing the conductive portions includes energizing the corresponding substrate leads.

22. The method of claim 19, wherein:

24. An electronic device comprising a filter according to claim 23 or a device structure according to any of claims 1-18.