CN111599743A - Method for producing wafer by combining composite adhesive film with through hole glass carrier plate structure - Google Patents
Method for producing wafer by combining composite adhesive film with through hole glass carrier plate structure Download PDFInfo
- Publication number
- CN111599743A CN111599743A CN202010641738.1A CN202010641738A CN111599743A CN 111599743 A CN111599743 A CN 111599743A CN 202010641738 A CN202010641738 A CN 202010641738A CN 111599743 A CN111599743 A CN 111599743A
- Authority
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- China
- Prior art keywords
- wafer
- carrier plate
- glass carrier
- adhesive film
- composite adhesive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000011521 glass Substances 0.000 title claims abstract description 92
- 239000002131 composite material Substances 0.000 title claims abstract description 60
- 239000002313 adhesive film Substances 0.000 title claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 30
- 239000000853 adhesive Substances 0.000 claims abstract description 15
- 230000001070 adhesive effect Effects 0.000 claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- 239000013078 crystal Substances 0.000 claims abstract description 6
- 238000010030 laminating Methods 0.000 claims abstract description 5
- 230000003287 optical effect Effects 0.000 claims abstract description 5
- 238000005530 etching Methods 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 238000005520 cutting process Methods 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000003960 organic solvent Substances 0.000 claims description 4
- 239000003292 glue Substances 0.000 claims description 3
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims 1
- 238000000576 coating method Methods 0.000 abstract description 8
- 239000011248 coating agent Substances 0.000 abstract description 7
- 230000000903 blocking effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 13
- 238000004806 packaging method and process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Dicing (AREA)
Abstract
The invention discloses a method for producing a wafer by combining a composite adhesive film with a through hole glass carrier plate structure, which is characterized by comprising the following steps of: s1: opening holes in the glass carrier plate, S2: adhering the composite adhesive film to the glass carrier plate, placing the front surface of the wafer on the composite adhesive film after the wafer is accurately aligned to the glass carrier plate by adopting an optical mechanism, adhering the wafer on the glass carrier plate by adopting a laminating and heating mode, and S3: and removing the composite adhesive film in the glass window hole, and thinning the crystal grains. The production method of the wafer combines the composite adhesive film and the windowed glass carrier plate together to replace the traditional adhesive, thereby avoiding the influence on the subsequent process caused by uneven coating, blocking of the window/TGV communication hole by the adhesive; the glass carrier plate with the completed through hole and the wafer are bonded together through the composite adhesive film, so that the damage of the wafer caused by windowing after bonding is avoided, the production efficiency is improved, and the production cost is reduced.
Description
Technical Field
The invention relates to a method for producing a wafer, in particular to a method for producing a wafer by combining a composite adhesive film with a through hole glass carrier plate structure.
Background
In order to improve the electronic circuit performance of the electronic element, the heat dissipation capacity of the element can be optimized by reducing the thickness of the chip and reducing the on-resistance, the performance requirement of the electronic circuit high-current on-state high-frequency switch of the element is improved, and the thinned chip crystal grain meets the packaging thinning trend. The multi-layer and 3D packaging requirements of the power element can be met. In order to achieve the requirement of thinning the wafer, a circular glass carrier with a thickness of 400 and 750 microns is adopted to temporarily bond the wafer to transmit the wafer for the wafer thickness thinning and back metallization process. In the prior art, the bonding is carried out by coating an adhesive on a wafer, a UV or a decomposable release layer is coated on a glass carrier plate to complete the bonding of the wafer and the glass, then processes such as thinning, yellow light pattern, ion implantation, metal coating and the like are carried out, then the wafer is subjected to the unbonded wafer to continue the cutting and packaging process of the wafer, however, in order to carry out a double-sided process, if a windowed glass carrier plate is adopted or a glass carrier plate with communication holes (TGV) is used for advanced packaging 2.5D and 3D, the existing process cannot be carried out, because the coating method dissolves the release layer in an organic solvent, the release layer is inevitably leaked and even filled into the window or the TGV during coating, the subsequent metal filling process of the communication of through holes is seriously hindered, and a uniform coating layer is difficult to form during the surface glass coating, the glass carrier plate is windowed after the bonding, resulting in damage to the wafer.
Disclosure of Invention
The invention aims to provide a method for producing a wafer by combining a composite adhesive film with a through hole glass carrier plate structure, wherein the composite adhesive film is combined with a windowed glass carrier plate to replace the traditional adhesive, so that the subsequent process is prevented from being influenced by uneven coating and blockage of window/TGV communication holes by the adhesive; the glass carrier plate with the completed through hole and the wafer are bonded together through the composite adhesive film, so that the damage of the wafer caused by windowing after bonding is avoided, the production efficiency is improved, and the production cost is reduced.
The purpose of the invention can be realized by the following technical scheme:
the method for producing the wafer by combining the composite adhesive film with the through hole glass carrier plate structure is characterized by comprising the following steps of:
s1: glass carrier plate opening
And forming a glass hole on the glass carrier plate.
S2: the wafer is bonded on the glass carrier plate
The composite adhesive film is adhered to the glass carrier plate, the front surface of the wafer is placed on the composite adhesive film after the wafer is accurately aligned to the glass carrier plate by adopting an optical mechanism, and the wafer is adhered to the glass carrier plate by adopting a laminating and heating mode.
S3: composite adhesive film for removing glass window hole
And thinning the crystal grains, removing the composite adhesive film in the glass window hole after the back element process, and exposing the front surface of the wafer.
Further, removing the glass carrier plate after S3 is finished, finishing a double-sided process, uniformly attaching the thinned wafer on the Dicingframe, reducing the adhesive force of the composite adhesive film after UV irradiation, reducing the viscosity of the composite adhesive film from 1000-2000gf/25mm to 10-30gf/25mm after the composite adhesive film is irradiated, and removing the glass carrier plate.
Further, after the glass carrier plate is removed, degumming is carried out in a heating mode, the composite adhesive film is lifted and removed, then the residual adhesive is removed, the residual adhesive is removed by adopting an oxygen plasma and an organic solvent, the surface of the wafer is cleaned, and etching of the cutting channel is completed by adopting a plasma process/a laser process.
Further, after the step S3 is finished, a connection process is carried out, glass is an adapter plate, Bump is formed after metal is communicated with a glass window hole of the TGV, and the wafer is connected with other plates through Bump after being thinned.
Further, in S1, the glass carrier is subjected to window/TGV pattern opening by a yellow mask pattern process, a laser or an etching process.
Further, the composite adhesive film comprises a composite layer, a heat treatment layer and a UV light layer.
Further, in the step S3, an oxygen plasma/laser is used to remove the composite adhesive film in the glass window opening.
The invention has the beneficial effects that:
1. the method for producing the wafer combines the composite adhesive film and the windowed glass carrier plate, replaces the traditional adhesive, and avoids the problems that the subsequent process is influenced because the coating is uneven and the adhesive blocks the window/TGV communication hole;
2. according to the method for producing the wafer, the glass carrier plate with the finished through hole and the wafer are bonded together through the composite adhesive film, so that the damage of the wafer caused by windowing after bonding is avoided, the production efficiency is improved, and the production cost is reduced.
Drawings
The invention will be further described with reference to the accompanying drawings.
FIG. 1 is a schematic view of a film pressing device according to the present invention;
FIG. 2 is a schematic view of the wafer bonded to a glass carrier according to the present invention;
FIG. 3 is a schematic view of a composite adhesive film structure according to the present invention;
FIG. 4 is a schematic view of the present invention illustrating the removal of the composite adhesive film from the window opening;
FIG. 5 is a schematic view of a wafer attached to a dicing film frame according to the present invention;
FIG. 6 is a schematic view of the glass carrier plate according to the present invention removed;
FIG. 7 is a schematic diagram of the etching of scribe lines according to the present invention;
FIG. 8 is a schematic view of the bonding process of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
The method for producing the wafer by combining the composite adhesive film with the through hole glass carrier plate structure comprises the following steps:
s1: glass carrier plate opening
The glass carrier 1 is subjected to pattern opening of windowing/TGV (through holes penetrating the glass carrier) by a yellow light mask pattern process, a laser or an etching process, and a glass window hole 11 is formed on the glass carrier 1, as shown in fig. 1.
S2: the wafer is bonded on the glass carrier plate
The composite adhesive film 3 is adhered to the glass carrier 1, after the wafer 2 is precisely aligned to the glass carrier 1 by an optical mechanism, the front surface of the wafer 2 is placed on the composite adhesive film 3, and the wafer 2 is adhered to the glass carrier 1 by laminating and heating, as shown in fig. 2.
The composite adhesive film 3 includes a composite layer 32, a heat treatment layer 31 and a UV light irradiation layer 33.
S3: composite adhesive film 3 for removing glass window hole 11
After the crystal grains are thinned and the back component process is performed, the composite adhesive film 3 in the glass window hole 11 is removed by adopting oxygen plasma/laser, so that the front surface of the wafer 2 is exposed, as shown in fig. 4.
S4: removal of the glass carrier plate 1
Completing the double-sided process, uniformly attaching the thinned wafer 2 on the Dicingframe (cutting frame), reducing the adhesive force of the composite adhesive film 3 after UV irradiation, reducing the viscosity of the composite adhesive film 3 after irradiation from 1000-2000gf/25mm to 10-30gf/25mm, and removing the glass carrier plate 1, as shown in FIG. 5 and FIG. 6.
S5: glass carrier plate for removal
The adhesive is removed by heating, and the composite adhesive film 3 is lifted and removed.
S6: removing residual glue
And removing residual glue by using oxygen plasma and an organic solvent, cleaning the surface of the wafer 2, and completing etching of the cutting channel by using a plasma process/a laser process, as shown in fig. 7.
Example 2
The method for producing the wafer by combining the composite adhesive film with the through hole glass carrier plate structure comprises the following steps:
s1: glass carrier plate opening
The glass carrier 1 is subjected to pattern opening of windowing/TGV (through holes penetrating the glass carrier) by a yellow light mask pattern process, a laser or an etching process, and a glass window hole 11 is formed on the glass carrier 1, as shown in fig. 1.
S2: the wafer is bonded on the glass carrier plate
The composite adhesive film 3 is adhered to the glass carrier 1, after the wafer 2 is precisely aligned to the glass carrier 1 by an optical mechanism, the front surface of the wafer 2 is placed on the composite adhesive film 3, and the wafer 2 is adhered to the glass carrier 1 by laminating and heating, as shown in fig. 2.
The composite adhesive film 3 includes a composite layer 32, a heat treatment layer 31 and a UV light irradiation layer 33.
S3: composite adhesive film 3 for removing glass window hole 11
After the crystal grains are thinned and the back component process is performed, the composite adhesive film 3 in the glass window hole 11 is removed by adopting oxygen plasma/laser, so that the front surface of the wafer 2 is exposed, as shown in fig. 4.
S4: connection process
The glass is an interposer glass (interposer), a Bump is formed after the glass window hole 11 of the TGV is connected with metal, and the wafer 2 is connected with other plates through the Bump after being thinned, as shown in fig. 8.
In the description herein, references to the description of "one embodiment," "an example," "a specific example" or the like are intended to mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed.
Claims (7)
1. The method for producing the wafer by combining the composite adhesive film with the through hole glass carrier plate structure is characterized by comprising the following steps of:
s1: glass carrier plate opening hole
Forming a glass window hole (11) on the glass carrier plate (1);
s2: the wafer is bonded on the glass carrier plate
The composite adhesive film (3) is adhered to the glass carrier plate (1), after the wafer (2) is accurately aligned to the glass carrier plate (1) by adopting an optical mechanism, the front surface of the wafer (2) is placed on the composite adhesive film (3), and the wafer (2) is adhered to the glass carrier plate (1) by adopting a film laminating and heating mode;
s3: composite glue film (3) for removing glass window hole (11)
Thinning the crystal grains, removing the composite adhesive film (3) in the glass window hole (11) after the back component process, and exposing the front surface of the wafer (2).
2. The method for producing a wafer by combining a composite adhesive film and a through hole glass carrier plate structure as claimed in claim 1, wherein the glass carrier plate (1) is removed after S3 is completed, a double-sided process is completed, the thinned wafer (2) is uniformly attached to Dicingframe, the adhesive force of the composite adhesive film (3) is reduced after UV irradiation, the viscosity of the composite adhesive film (3) is reduced from 1000-2000gf/25mm to 10-30gf/25mm after irradiation, and the glass carrier plate (1) is removed.
3. The method for producing a wafer by combining a composite adhesive film and a through hole glass carrier plate structure according to claim 2, wherein after the glass carrier plate (1) is removed, the adhesive is removed by heating, the composite adhesive film (3) is lifted and removed, the residual adhesive is removed by using an oxygen plasma and an organic solvent, the surface of the wafer (2) is cleaned, and the etching of the cutting channel is completed by using a plasma process/a laser process.
4. The method for producing a wafer by combining a composite adhesive film with a through-hole glass carrier plate structure according to claim 1, wherein a connection process is performed after S3 is completed, the glass is an adapter plate, Bump is formed after metal connection with a glass window hole (11) of the TGV, and the wafer (2) is connected with other plates through Bump after being thinned.
5. The method for producing a wafer according to claim 1, wherein the glass carrier (1) is patterned by photolithography, laser or etching in step S1 for opening windows/TGV.
6. The method for producing a wafer according to claim 1, wherein the composite adhesive film (3) comprises a composite layer (32), a heat treatment layer (31) and a UV light layer (33).
7. The method for producing a wafer with the composite adhesive film combined with the through-hole glass carrier plate structure as claimed in claim 1, wherein in step S3, the composite adhesive film (3) in the window hole (11) is removed by plasma/laser with oxygen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010641738.1A CN111599743B (en) | 2020-07-06 | 2020-07-06 | Method for producing wafer by combining composite adhesive film with through hole glass carrier plate structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010641738.1A CN111599743B (en) | 2020-07-06 | 2020-07-06 | Method for producing wafer by combining composite adhesive film with through hole glass carrier plate structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111599743A true CN111599743A (en) | 2020-08-28 |
| CN111599743B CN111599743B (en) | 2024-05-28 |
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| CN202010641738.1A Active CN111599743B (en) | 2020-07-06 | 2020-07-06 | Method for producing wafer by combining composite adhesive film with through hole glass carrier plate structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112234016A (en) * | 2020-10-19 | 2021-01-15 | 绍兴同芯成集成电路有限公司 | Manufacturing process of wafer thick film metal layer and PAD metal pattern |
| CN112289734A (en) * | 2020-11-25 | 2021-01-29 | 绍兴同芯成集成电路有限公司 | Process for dissociating glass carrier plate by organic solvent infiltration debonding bonding ultrathin wafer |
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| GB8305761D0 (en) * | 1983-03-02 | 1983-04-07 | Standard Telephones Cables Ltd | Integrated circuit packaging |
| CN86100204A (en) * | 1985-01-17 | 1986-08-13 | 通用电气公司 | The method for production of having the integrated circuit silicon small pieces compound of hotmelt on the silicon base |
| US20040262732A1 (en) * | 2003-04-24 | 2004-12-30 | Sanyo Electric Co., Ltd. | Semiconductor device and manufacturing method thereof |
| TWI234211B (en) * | 2003-12-26 | 2005-06-11 | Advanced Semiconductor Eng | Method for forming an underfilling layer on a bumped wafer |
| CN101075580A (en) * | 2007-06-01 | 2007-11-21 | 日月光半导体制造股份有限公司 | Method for cutting crystal wafer |
| CN103597578A (en) * | 2011-05-27 | 2014-02-19 | 康宁股份有限公司 | Non-polished glass wafer, thinning system and method for using the non-polished glass wafer to thin a semiconductor wafer |
| CN104064509A (en) * | 2014-07-09 | 2014-09-24 | 浙江中纳晶微电子科技有限公司 | Temporary bonding method and separation method of wafers |
| US20150096673A1 (en) * | 2013-10-07 | 2015-04-09 | International Business Machines Corporation | Dual adhesive bonding with perforated wafer |
| US20180158695A1 (en) * | 2015-05-01 | 2018-06-07 | Sony Corporation | Manufacturing method and wiring substrate with through electrode |
-
2020
- 2020-07-06 CN CN202010641738.1A patent/CN111599743B/en active Active
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| GB8305761D0 (en) * | 1983-03-02 | 1983-04-07 | Standard Telephones Cables Ltd | Integrated circuit packaging |
| CN86100204A (en) * | 1985-01-17 | 1986-08-13 | 通用电气公司 | The method for production of having the integrated circuit silicon small pieces compound of hotmelt on the silicon base |
| US20040262732A1 (en) * | 2003-04-24 | 2004-12-30 | Sanyo Electric Co., Ltd. | Semiconductor device and manufacturing method thereof |
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| CN103597578A (en) * | 2011-05-27 | 2014-02-19 | 康宁股份有限公司 | Non-polished glass wafer, thinning system and method for using the non-polished glass wafer to thin a semiconductor wafer |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112234016A (en) * | 2020-10-19 | 2021-01-15 | 绍兴同芯成集成电路有限公司 | Manufacturing process of wafer thick film metal layer and PAD metal pattern |
| CN112234016B (en) * | 2020-10-19 | 2023-06-23 | 绍兴同芯成集成电路有限公司 | Manufacturing process of wafer thick film metal layer and PAD metal pattern |
| CN112289734A (en) * | 2020-11-25 | 2021-01-29 | 绍兴同芯成集成电路有限公司 | Process for dissociating glass carrier plate by organic solvent infiltration debonding bonding ultrathin wafer |
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| Publication number | Publication date |
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| CN111599743B (en) | 2024-05-28 |
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