CN111540719B - Multi-TSV millimeter wave vertical interconnection structure with spiral strip lines connected in series - Google Patents
Multi-TSV millimeter wave vertical interconnection structure with spiral strip lines connected in series Download PDFInfo
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- CN111540719B CN111540719B CN202010654270.XA CN202010654270A CN111540719B CN 111540719 B CN111540719 B CN 111540719B CN 202010654270 A CN202010654270 A CN 202010654270A CN 111540719 B CN111540719 B CN 111540719B
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Abstract
The invention relates to a multi-TSV millimeter wave vertical interconnection structure of a tandem spiral strip line, which comprises at least four layers of vertically stacked silicon adapter plates, wherein each silicon adapter plate is provided with two groups of grounding TSVs; a second layer of strip line, a second layer of open-circuit branch knot and a second layer of spiral strip line are arranged between the first layer of silicon adapter plate and the second layer of silicon adapter plate; the second layer of strip line is a feeder line and is connected with the second layer of open-circuit branch knot and the second layer of spiral strip line; the second layer of silicon adapter plate is also provided with a signal line TSV, and the top end of the signal line TSV is connected with one end, close to the center, of the second layer of spiral strip line; a fourth layer of strip line is arranged between the third layer of silicon adapter plate and the fourth layer of silicon adapter plate; the top end of a signal line TSV of the third layer of silicon adapter plate is correspondingly connected with the signal line TSV of the adjacent upper layer of silicon adapter plate, and the bottom end of the signal line TSV of the third layer of silicon adapter plate is connected with the fourth layer of strip line; the fourth layer of strip lines are feeder lines. The invention provides a multi-TSV vertical interconnection structure capable of supporting three-dimensional heterogeneous integration application from direct current to Ka wave band.
Description
Technical Field
The invention relates to the technical field of three-dimensional integration, in particular to a multi-TSV millimeter wave vertical interconnection structure with serially connected spiral strip lines.
Background
In the application of the L-C waveband phased array, the antenna array element spacing is large, a two-dimensional multi-chip module packaging (MCM) integration process is usually adopted at the radio frequency front end, and the size requirement is not high. However, when the phased array extends to the millimeter wave frequency bands such as the Ka band, the channel spacing is only a few millimeters, and meanwhile, in order to realize the low profile of the phased array antenna, the requirements on the transverse and longitudinal dimensions of the radio frequency front end are more severe, the traditional two-dimensional integration process cannot meet the requirements, and the problem of miniaturization of the radio frequency front end channel needs to be solved through a three-dimensional integration process.
With the development of silicon-based micro-electro-mechanical systems (MEMS) and radio frequency Through Silicon Vias (TSV) process technologies, a 3D heterogeneous integration technology becomes an important direction for the development of the next-generation high-integration radio frequency system technology, the technology can realize longitudinal three-dimensional stacking of radio frequency front-end channels with silicon adapter plates as substrates, and high-performance radio frequency interconnection among multiple layers of silicon adapter plates is realized through a multi-TSV vertical interconnection structure, so that high-density three-dimensional integration of the radio frequency front-end channels is realized.
The traditional multi-TSV vertical interconnection structure mostly adopts a three-TSV structure and a multi-TSV type coaxial structure of ground-signal-ground (namely, grounded TSV-signal line TSV-grounded TSV, which is abbreviated as GSG). The three TSVs of the traditional GSG are simple in structure and small in lateral size occupation, and mostly appear in vertical interconnection application of wave bands below Ku, but in millimeter wave band application such as Ka wave bands, the thickness of a single-layer silicon adapter plate is no longer much smaller than the wavelength of a radio frequency signal in a silicon medium, two grounding TSVs on two sides of a signal line TSV cannot achieve good shielding of the vertically transmitted radio frequency signal, meanwhile, the signal line TSV and the grounding TSV both have large parasitic inductance and resistance, and large parasitic capacitance exists between the signal line TSV and the grounding TSV, and when the multilayer stacked silicon adapter plates are vertically interconnected, the TSV which is several times as thick as the single-layer silicon adapter plate has a more serious parasitic effect, and good matching and grounding requirements of the radio frequency signals of the millimeter wave band such as the Ka wave bands cannot be met. Although the traditional multi-TSV coaxial structure has good shielding and grounding effects on radio frequency signals, the radius of the 50 omega (ohm) coaxial structure in the silicon adapter plate is larger, and in the application of millimeter wave frequency bands such as Ka wave bands, the occupied transverse area is no longer much smaller than the wavelength of radio frequency signals, the limited circuit area of each layer of silicon adapter plate is obviously occupied, and the application requirement of high-density three-dimensional integration of the Ka wave bands cannot be met.
Disclosure of Invention
The invention aims to overcome at least part of defects and provides a multi-TSV vertical interconnection structure capable of supporting three-dimensional heterogeneous integration application from direct current to Ka wave band.
In order to achieve the purpose, the invention provides a multi-TSV millimeter wave vertical interconnection structure of serially connected spiral strip lines, which comprises at least four layers of vertically stacked silicon adapter plates, wherein the topmost layer and the next topmost layer are respectively a first layer of silicon adapter plate and a second layer of silicon adapter plate, and the bottommost layer and the next bottommost layer are respectively a fourth layer of silicon adapter plate and a third layer of silicon adapter plate; each silicon adapter plate is provided with two groups of grounding TSV;
the upper surface of the first layer of silicon adapter plate is provided with a first layer of upper surface metal ground; a second layer of strip line, a second layer of open-circuit branch knot, a second layer of spiral strip line and two first and second layers of interconnected metal grounds are arranged between the first layer of silicon adapter plate and the second layer of silicon adapter plate; the lower surface of the second layer of silicon adapter plate is provided with a middle layer metal ground and an air window;
the top ends of two groups of grounding TSV of the first layer of silicon adapter plate are connected with the metal ground of the upper surface of the first layer, the bottom ends of the two groups of grounding TSV of the second layer of silicon adapter plate are correspondingly connected with the top ends of the two groups of grounding TSV of the second layer of silicon adapter plate through two first and second layers of interconnection metal grounds respectively, and the bottom ends of the two groups of grounding TSV of the second layer of silicon adapter plate are correspondingly connected with the two groups of grounding TSV of the next adjacent layer of silicon adapter plate through the middle layer metal ground respectively;
the second layer of strip line is a feeder line and is connected with the second layer of open-circuit branch knot and the second layer of spiral strip line, the second layer of open-circuit branch knot is an open-end parallel strip line, and the second layer of spiral strip line is a series spiral strip line with less than one turn; the second-layer silicon adapter plate is also provided with a signal wire TSV, the top end of the signal wire TSV of the second-layer silicon adapter plate is connected with one end, close to the center, of the second-layer spiral strip line, and the bottom end of the signal wire TSV of the second-layer silicon adapter plate is arranged in the range of the air window and used for being correspondingly connected with the signal wire TSV of the next-layer silicon adapter plate;
a fourth layer of strip line and two third and fourth layers of interconnected metal ground are arranged between the third layer of silicon adapter plate and the fourth layer of silicon adapter plate; the lower surface of the fourth layer of silicon adapter plate is provided with a fourth layer of lower surface metal ground;
the top ends of two groups of grounding TSV of the third layer of silicon adapter plate are respectively and correspondingly connected with two groups of grounding TSV of the adjacent upper layer of silicon adapter plate, the bottom ends of the two groups of grounding TSV of the fourth layer of silicon adapter plate are respectively and correspondingly connected with the top ends of the two groups of grounding TSV of the fourth layer of silicon adapter plate through two third and fourth layers of interconnection metal, and the bottom ends of the two groups of grounding TSV of the fourth layer of silicon adapter plate are connected with the metal ground on the lower surface of the fourth layer;
the third layer of silicon adapter plate is also provided with a signal line TSV, the top end of the signal line TSV of the third layer of silicon adapter plate is correspondingly connected with the signal line TSV of the adjacent upper layer of silicon adapter plate, and the bottom end of the signal line TSV of the third layer of silicon adapter plate is connected with the fourth layer of strip line; the fourth layer of strip lines are feeder lines.
Preferably, the thickness of the single-layer silicon interposer is in the range of 200 μm to 300 μm.
Preferably, each group of the grounding TSVs of each silicon interposer includes three grounding TSVs arranged at intervals.
Preferably, the second layer of strip lines, the second layer of open-circuit branches and the second layer of spiral strip lines are arranged on the upper surface of the second layer of silicon interposer, and the two first and second layers of interconnection metal are arranged on the lower surface of the first layer of silicon interposer and the upper surface of the second layer of silicon interposer.
Preferably, the fourth layer of strip lines is disposed on the upper surface of the fourth layer of silicon interposer, and the two third and fourth layers of interconnection metal are disposed on the lower surface of the third layer of silicon interposer and the upper surface of the fourth layer of silicon interposer.
Preferably, the silicon interposer comprises four layers of vertically stacked silicon interposers, and the second layer of silicon interposer is connected with the third layer of silicon interposer.
Preferably, the silicon interposer further comprises at least one layer as an intermediate layer; the silicon adapter plates as the middle layers are vertically stacked and arranged between the second layer of silicon adapter plates and the third layer of silicon adapter plates; the silicon adapter plate serving as the middle layer is provided with signal wires TSV, the upper surface and the lower surface of the silicon adapter plate are provided with middle layer metal grounds and air windows, and the top ends and the bottom ends of the signal wires TSV of the silicon adapter plate serving as the middle layer are located in the range of the air windows.
Preferably, the signal lines TSV of two adjacent layers of silicon interposer are connected through a pad.
Preferably, the second layer of strip lines, the second layer of open stubs and the second layer of spiral strip lines are provided between two of the first two layers of interconnected metal grounds.
Preferably, the area of the single-layer silicon adapter plate is not more than 0.3mm2。
The technical scheme of the invention has the following advantages: the invention provides a multi-TSV millimeter wave vertical interconnection structure of serially connected spiral strip lines, which realizes good shielding and grounding of radio frequency signals in a Ka waveband by adopting a single signal line TSV and two groups of grounding TSVs through a multilayer stacked silicon adapter plate, and realizes ultra wide band matching from direct current to the Ka waveband by combining the serially connected spiral strip lines and open circuit branches. The invention can meet the requirements of good shielding and grounding of vertical transmission radio frequency signals in millimeter wave frequency band three-dimensional heterogeneous integration application, and adopts the spiral strip line matching structure with much less TSV number and high integration degree than the traditional multi-TSV coaxial structure, thereby effectively reducing the occupation of the transverse area.
Drawings
FIG. 1 is a schematic diagram of a multi-TSV millimeter wave vertical interconnect structure of a tandem spiral stripline in accordance with an embodiment of the present invention;
FIG. 2 is a diagram illustrating S-parameter simulation results of a multi-TSV millimeter wave vertical interconnection structure of serially connected spiral strip lines according to an embodiment of the present invention;
in the figure: 1: a first layer of silicon interposer; 2: a second layer of silicon interposer; 3: a third layer of silicon interposer; 4: a fourth layer of silicon interposer; 5: a first layer upper surface metal ground; 6: an intermediate metal ground; 7: the lower surface of the fourth layer is metal ground; 8: a second layer of striplines; 9: a first two-level interconnect metal ground; 10: a second layer of open-circuit branches; 11: a second layer of helical striplines; 12: a signal line TSV; 13: grounding the TSV; 14: an air window; 15: a pad; 16: a fourth layer of stripline; 17: the third four layers interconnect the metal ground.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
As shown in fig. 1, an embodiment of the invention provides a multi-TSV millimeter wave vertical interconnection structure of a serial spiral stripline, where the vertical interconnection structure includes at least four vertically stacked silicon interposer layers. Preferably, the thickness of the single-layer silicon interposer is in the range of 200 μm to 300 μm.
For convenience of illustration, the direction of the arrow in fig. 1 is taken as the direction of the invention, the topmost layer and the next topmost layer of the vertical interconnect structure are respectively a first layer silicon interposer 1 and a second layer silicon interposer 2, and the bottommost layer and the next bottommost layer are respectively a fourth layer silicon interposer 4 and a third layer silicon interposer 3. The top of the vertical interconnection structure is a sandwich structure formed by a first layer silicon adapter plate 1 and a second layer silicon adapter plate 2, and the bottom of the vertical interconnection structure is a sandwich structure formed by a third layer silicon adapter plate 3 and a fourth layer silicon adapter plate 4. And a silicon adapter plate can be additionally arranged between the second layer of silicon adapter plate 2 and the third layer of silicon adapter plate 3 according to actual conditions. And each layer of silicon adapter plate is provided with two groups of grounding TSV 13 for realizing vertical interconnection grounding. As shown in fig. 1, after vertical stacking, two groups of grounding TSVs 13 of two adjacent silicon interposer layers are respectively and correspondingly connected. Each group of grounded TSVs 13 of each silicon interposer preferably includes three grounded TSVs 13 arranged at intervals.
The upper surface of the first layer of silicon interposer 1 is provided with a first layer upper surface metal ground 5, and the first layer upper surface metal ground 5 is preferably a whole metal layer. A second layer of strip line 8, a second layer of open-circuit branch 10, a second layer of spiral strip line 11 and two first and second layers of interconnection metal ground 9 are arranged between the first layer of silicon interposer 1 and the second layer of silicon interposer 2. The lower surface of the second layer of silicon adapter plate 2 is provided with an intermediate layer metal ground 6 and an air window 14, namely the lower surface of the second layer of silicon adapter plate 2 is provided with a metal layer with the air window 14.
The top ends of two groups of grounding TSV 13 of the first layer silicon adapter plate 1 are connected with a first layer upper surface metal ground 5, the bottom ends of the two groups of grounding TSV 13 of the second layer silicon adapter plate 2 are correspondingly connected with the top ends of the two groups of grounding TSV 13 of the second layer silicon adapter plate 2 through two first and second layer interconnection metal grounds 9 respectively, and the bottom ends of the two groups of grounding TSV 13 of the second layer silicon adapter plate 2 are correspondingly connected with the top ends of the two groups of grounding TSV 13 of the adjacent next layer silicon adapter plate through a middle layer metal ground 6 respectively. The first two-layer interconnection metal ground 9 is preferably a sheet metal layer provided with a pad 15 so as to realize the vertical interconnection of the bottom end of the grounding TSV 13 of the first-layer silicon interposer 1 and the top end of the grounding TSV 13 of the second-layer silicon interposer 2 correspondingly.
The second layer of strip line 8 is a feeder line, connects the second layer of open-circuit branch 10 and the second layer of spiral strip line 11, and is used for feeding in/feeding out radio frequency signals. The open-ended branches 10 of the second layer are open-ended parallel striplines, preferably of rectangular configuration. The second layer of helical striplines 11 is a series of helical striplines of less than one turn.
As shown in fig. 1, the second-layer silicon interposer 2 is further provided with a signal line TSV 12, a top end of the signal line TSV 12 of the second-layer silicon interposer 2 is connected to one end of the second-layer spiral strip line 11 close to the center (one end of the second-layer spiral strip line 11 away from the center is connected to the second-layer strip line 8 and the second-layer open-circuit branch 10), and a bottom end of the signal line TSV 12 of the second-layer silicon interposer 2 is disposed within the range of the air window 14 and is used for correspondingly connecting top ends of the signal lines TSV 12 of adjacent next-layer silicon interposer. After vertical stacking, the signal lines TSV 12 of the two adjacent layers of silicon adapter plates are correspondingly connected. The bottom end of the signal wire TSV 12 is arranged in the range of the air window 14, the signal wire TSV 12 is not in contact with a metal layer (namely the middle-layer metal ground 6) between two adjacent layers of silicon adapter plates, and the middle-layer metal ground 6 can be prevented from interfering the signal wire TSV 12 to carry out vertical interconnection.
A pad 15 is preferably provided at the center of the second-layer helical stripline 11 so as to connect the top end of the signal line TSV 12 of the second-layer silicon interposer 2 with the second-layer helical stripline 11. As shown in fig. 1, the second-layer spiral stripline 11 (excluding the pad 15 provided at the center) is less than one turn, and the corresponding angle of wrap is less than 360 °. The second layer of open-circuit branches 10 and the second layer of spiral strip lines 11 are used for compensating millimeter wave frequency band impedance mismatch introduced by a right-angle transition structure between horizontal transmission and vertical transmission of radio frequency signals, and narrow-band matching exceeding 10% of relative bandwidth can be realized in a Ka frequency band.
A fourth layer of strip lines 16 and two third and fourth layers of interconnection metal grounds 17 are arranged between the third layer of silicon interposer 3 and the fourth layer of silicon interposer 4. The lower surface of the fourth layer silicon interposer 4 is provided with a fourth layer lower surface metal ground 7, and the fourth layer lower surface metal ground 7 is preferably a whole metal layer.
The top ends of the two groups of grounding TSV 13 of the third-layer silicon adapter plate 3 are respectively and correspondingly connected with the bottom ends of the two groups of grounding TSV 13 of the adjacent upper-layer silicon adapter plate, the bottom ends of the two groups of grounding TSV 13 of the third-layer silicon adapter plate 3 are respectively and correspondingly connected with the top ends of the two groups of grounding TSV 13 of the fourth-layer silicon adapter plate 4 through two third and fourth-layer interconnection metal lands 17, and the bottom ends of the two groups of grounding TSV 13 of the fourth-layer silicon adapter plate 4 are connected with the fourth-layer lower surface metal land 7. The third four-layer interconnection metal ground 17 is preferably a sheet metal layer provided with a pad 15 so as to realize the vertical interconnection of the bottom end of the grounding TSV 13 of the third layer silicon interposer 3 and the top end of the grounding TSV 13 of the fourth layer silicon interposer 4 correspondingly.
The third layer of silicon adapter plate 3 is further provided with a signal wire TSV 12, the top end of the signal wire TSV 12 of the third layer of silicon adapter plate 3 is correspondingly connected with the bottom end of the signal wire TSV 12 of the adjacent upper layer of silicon adapter plate, and the bottom end of the signal wire TSV 12 of the third layer of silicon adapter plate 3 is connected with the fourth layer of strip line 16. The fourth layer strip line 16 is a feeder line and functions to feed out/feed in the radio frequency signal, i.e. one of the second layer strip line 8 and the fourth layer strip line 16 is used to feed in the radio frequency signal, and the other is used to feed out the radio frequency signal. The rf signal can be fed from the second layer strip line 8 and fed from the fourth layer strip line 16, or can be fed from the fourth layer strip line 16 and fed from the second layer strip line 8.
Preferably, in order to facilitate the integration and chip embedding, the second layer of strip lines 8, the second layer of open stubs 10 and the second layer of spiral strip lines 11 are disposed on the upper surface of the second layer of silicon interposer 2, and the two first and second layer interconnection metal grounds 9 are disposed on the lower surface of the first layer of silicon interposer 1 and the upper surface of the second layer of silicon interposer 2. Further, a fourth layer of strip lines 16 is disposed on the upper surface of the fourth layer of silicon interposer 4, and two third and fourth layer interconnection metal lands 17 are disposed on the lower surface of the third layer of silicon interposer 3 and the upper surface of the fourth layer of silicon interposer 4.
Preferably, for space saving and reasonable layout, the second layer of strip lines 8, the second layer of open stubs 10 and the second layer of spiral strip lines 11 are arranged between the two first and second layers of interconnection metal grounds 9 between the first layer of silicon interposer 1 and the second layer of silicon interposer 2. Furthermore, the two groups of grounding TSVs arranged on each silicon adapter plate are preferably arranged on two sides of the silicon adapter plate respectively. The area of the single-layer silicon adapter plate is preferably not more than 0.3mm2So as to meet the application requirement of Ka frequency band high-density three-dimensional integration.
The signal lines TSV 12 of two adjacent layers of silicon interposer are preferably connected by a pad 15 to ensure a stable structure.
In some preferred embodiments, the multi-TSV millimeter wave vertical interconnection structure of the serial spiral stripline comprises four layers of vertically stacked silicon interposer, and the second layer of silicon interposer 2 is connected with the third layer of silicon interposer 3. As shown in fig. 1, a first layer silicon interposer 1, a second layer silicon interposer 2, a third layer silicon interposer 3 and a fourth layer silicon interposer 4 are arranged from top to bottom in sequence, an upper layer radio frequency channel is formed by the first layer silicon interposer 1 and the second layer silicon interposer 2, and a lower layer radio frequency channel is formed by the third layer silicon interposer 3 and the fourth layer silicon interposer 4. The first layer upper surface metal ground 5 and the middle layer metal ground 6 are respectively used as upper and lower reference grounds of a strip line in an upper layer radio frequency channel, the middle layer metal ground 6 and the fourth layer lower surface metal ground 7 are respectively used as upper and lower reference grounds of the strip line in a lower layer radio frequency channel, wherein the first layer upper surface metal ground 5 is positioned on the upper surface of the first layer silicon adapter plate 1, the middle layer metal ground 6 is positioned between the second layer silicon adapter plate 2 and the third layer silicon adapter plate 3, and the fourth layer lower surface metal ground 7 is positioned on the lower surface of the fourth layer silicon adapter plate 4.
When radio frequency signals are vertically transmitted from top to bottom, the radio frequency signals in the upper layer radio frequency channel are fed in through the second layer strip line 8, and ultra wide band 50 omega impedance matching of horizontal transmission in a direct current to Ka wave band is achieved by combining the first two layers of interconnection metal grounds 9 on the two sides. The fed-in radio frequency signals are transmitted into the signal lines TSV 12 in the second layer silicon adapter plate 2 and the third layer silicon adapter plate 3 through the second layer open-circuit branch 10 and the second layer spiral strip line 11, and ultra wide band 50 omega impedance matching of vertical transmission in a direct current to Ka wave band is achieved by combining three grounding TSV 13 on two sides. And a vertically transmitted radio frequency signal passes through the middle-layer metal ground 6 through the air window 14, and the signal wires TSV 12 in the second-layer silicon adapter plate 2 and the third-layer silicon adapter plate 3 are communicated through the bonding pad 15. The vertically transmitted rf signal is fed out through the fourth layer of strip line 16, and is combined with the two third and fourth layers of interconnection metal ground 17 on both sides to achieve 50 Ω impedance matching for horizontal transmission.
When the radio frequency signal is vertically transmitted from bottom to top, the transmission direction of the radio frequency signal is reversed, and the radio frequency signal in the lower layer radio frequency channel is fed in through the fourth layer strip line 16 and finally fed out through the second layer strip line 8.
In other preferred embodiments, the serial spiral stripline multi-TSV millimeter wave vertical interconnection structure further comprises at least one silicon interposer serving as an intermediate layer. The silicon interposer serving as the intermediate layer is vertically stacked and arranged between the second layer silicon interposer 2 and the third layer silicon interposer 3, that is, the first layer silicon interposer 1, the second layer silicon interposer 2, one or more layers of silicon interposers serving as the intermediate layer, the third layer silicon interposer 3 and the fourth layer silicon interposer 4 are arranged from top to bottom in sequence.
In order to realize vertical interconnection, two groups of grounding TSVs 13 of the silicon interposer serving as the middle layer are correspondingly connected with two groups of grounding TSVs 13 of the silicon interposer adjacent to the upper layer and the lower layer. The silicon adapter plate serving as the middle layer is provided with a signal wire TSV 12, the upper surface and the lower surface of the silicon adapter plate serving as the middle layer are provided with middle layer metal grounds 6 and are provided with air windows 14, the top end and the bottom end of the signal wire TSV 12 of the silicon adapter plate serving as the middle layer are respectively located in the range of the air windows 14, and the metal layer (namely the middle layer metal ground 6) between the two adjacent layers of silicon adapter plates is prevented from interfering with the signal wire TSV 12.
In summary, the multi-TSV millimeter wave vertical interconnection structure with the top connected with the spiral strip line in series provided by the invention adopts the vertical interconnection of the single signal line TSV 12 and the group of grounding TSVs 13 on both sides, so that the good shielding and grounding of the radio frequency signal of the Ka waveband are realized, and the ultra-wideband matching from direct current to the Ka waveband is realized by combining the spiral strip line and the open-circuit branch sections which are connected in series. The performance of the multi-TSV millimeter wave vertical interconnection structure with the top connected with the spiral strip line in series is simulated, an S parameter (scattering parameter) simulation result is obtained and is shown in figure 2, and marks S11, S22 and S21 in figure 2 respectively represent an input reflection coefficient, an output reflection coefficient and a transmission coefficient, so that it can be seen that the input reflection coefficient S11 and the output reflection coefficient S22 are less than-25 dB in a 1GHz-40GHz band, the transmission insertion loss performance is good, the transmission coefficient S21 is greater than-0.13 dB, excellent narrow-band matching exceeding 10% of relative bandwidth is realized in a Ka band, the input reflection coefficient S11 and the output reflection coefficient S22 are less than-31 dB in a 33GHz-37GHz band, and the transmission coefficient S21 is greater than-0.09 dB.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (10)
1. The utility model provides a many TSV millimeter wave vertical interconnect structure of concatenation spiral stripline which characterized in that: the silicon interposer comprises at least four layers of vertically stacked silicon interposer, wherein the topmost layer and the secondary layer are respectively a first layer of silicon interposer and a second layer of silicon interposer, and the bottommost layer and the secondary bottom layer are respectively a fourth layer of silicon interposer and a third layer of silicon interposer; each silicon adapter plate is provided with two groups of grounding TSV;
the upper surface of the first layer of silicon adapter plate is provided with a first layer of upper surface metal ground; a second layer of strip line, a second layer of open-circuit branch knot, a second layer of spiral strip line and two first and second layers of interconnected metal grounds are arranged between the first layer of silicon adapter plate and the second layer of silicon adapter plate; the lower surface of the second layer of silicon adapter plate is provided with a middle layer metal ground and an air window;
the top ends of two groups of grounding TSV of the first layer of silicon adapter plate are connected with the metal ground of the upper surface of the first layer, the bottom ends of the two groups of grounding TSV of the second layer of silicon adapter plate are correspondingly connected with the top ends of the two groups of grounding TSV of the second layer of silicon adapter plate through two first and second layers of interconnection metal grounds respectively, and the bottom ends of the two groups of grounding TSV of the second layer of silicon adapter plate are correspondingly connected with the two groups of grounding TSV of the next adjacent layer of silicon adapter plate through the middle layer metal ground respectively;
the second layer of strip line is a feeder line and is connected with the second layer of open-circuit branch knot and the second layer of spiral strip line, the second layer of open-circuit branch knot is an open-end parallel strip line, and the second layer of spiral strip line is a series spiral strip line with less than one turn; the second-layer silicon adapter plate is also provided with a signal wire TSV, the top end of the signal wire TSV of the second-layer silicon adapter plate is connected with one end, close to the center, of the second-layer spiral strip line, and the bottom end of the signal wire TSV of the second-layer silicon adapter plate is arranged in the range of the air window and used for being correspondingly connected with the signal wire TSV of the next-layer silicon adapter plate;
a fourth layer of strip line and two third and fourth layers of interconnected metal ground are arranged between the third layer of silicon adapter plate and the fourth layer of silicon adapter plate; the lower surface of the fourth layer of silicon adapter plate is provided with a fourth layer of lower surface metal ground;
the top ends of two groups of grounding TSV of the third layer of silicon adapter plate are respectively and correspondingly connected with two groups of grounding TSV of the adjacent upper layer of silicon adapter plate, the bottom ends of the two groups of grounding TSV of the fourth layer of silicon adapter plate are respectively and correspondingly connected with the top ends of the two groups of grounding TSV of the fourth layer of silicon adapter plate through two third and fourth layers of interconnection metal, and the bottom ends of the two groups of grounding TSV of the fourth layer of silicon adapter plate are connected with the metal ground on the lower surface of the fourth layer;
the third layer of silicon adapter plate is also provided with a signal line TSV, the top end of the signal line TSV of the third layer of silicon adapter plate is correspondingly connected with the signal line TSV of the adjacent upper layer of silicon adapter plate, and the bottom end of the signal line TSV of the third layer of silicon adapter plate is connected with the fourth layer of strip line; the fourth layer of strip lines are feeder lines.
2. The multi-TSV millimeter wave vertical interconnect structure of claim 1, wherein: the thickness of the single-layer silicon adapter plate ranges from 200 mu m to 300 mu m.
3. The multi-TSV millimeter wave vertical interconnect structure of claim 1, wherein: each group of grounding TSV of each silicon adapter plate comprises three grounding TSV which are arranged at intervals.
4. The multi-TSV millimeter wave vertical interconnect structure of claim 1, wherein: the second layer of strip lines, the second layer of open-circuit branches and the second layer of spiral strip lines are arranged on the upper surface of the second layer of silicon adapter plate.
5. The multi-TSV millimeter wave vertical interconnect structure of claim 4, wherein: the fourth layer of strip lines is arranged on the upper surface of the fourth layer of silicon adapter plate.
6. The multi-TSV millimeter wave vertical interconnect structure of claim 1, wherein: the silicon interposer comprises four layers of vertically stacked silicon interposers, and the second layer of silicon interposer is connected with the third layer of silicon interposer.
7. The multi-TSV millimeter wave vertical interconnect structure of claim 1, wherein: the silicon interposer is used as an intermediate layer; the silicon adapter plates as the middle layers are vertically stacked and arranged between the second layer of silicon adapter plates and the third layer of silicon adapter plates; the silicon adapter plate serving as the middle layer is provided with signal wires TSV, the upper surface and the lower surface of the silicon adapter plate are provided with middle layer metal grounds and air windows, and the top ends and the bottom ends of the signal wires TSV of the silicon adapter plate serving as the middle layer are located in the range of the air windows.
8. The multi-TSV millimeter wave vertical interconnect structure of claim 1, wherein: and the signal lines TSV of the two adjacent layers of silicon adapter plates are connected through the bonding pads.
9. The multi-TSV millimeter wave vertical interconnect structure of claim 1, wherein: the second layer of strip lines, the second layer of open-circuit branches and the second layer of spiral strip lines are arranged between the two first and second layers of interconnection metal grounds.
10. The multi-TSV millimeter wave vertical interconnect structure of concatenated helical striplines of claim 9, wherein: the area of the single-layer silicon adapter plate is not more than 0.3mm2。
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| JP3829787B2 (en) * | 2002-10-10 | 2006-10-04 | 三菱電機株式会社 | Waveguide / microstrip line converter |
| CN106848510A (en) * | 2017-03-03 | 2017-06-13 | 南京理工大学 | A kind of dual-passband difference filter of laminate substrate integrated wave guide structure |
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