CN111487567B - Piezoelectric magnetic sensor based on Lorentz force and preparation method thereof - Google Patents
Piezoelectric magnetic sensor based on Lorentz force and preparation method thereof Download PDFInfo
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- G01R33/028—Electrodynamic magnetometers
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- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
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Abstract
The invention discloses a piezoelectric magnetic sensor based on Lorentz force, which is characterized by comprising a piezoelectric layer for fixing a coil and an induction electrode, wherein the piezoelectric layer is fixed on a silicon substrate, and at least one pair of induction electrodes and at least one coil are fixed on the piezoelectric layer; the coil is used for driving the resonator to generate resonance and is positioned above the piezoelectric layer; and an upper electrode and a lower electrode in the induction electrodes are respectively fixed on the upper side and the lower side of the piezoelectric layer. The preparation method comprises the following steps: growing a lower electrode on a silicon substrate; growing a piezoelectric layer on the surface of the lower electrode; growing metal on the upper surface of the piezoelectric layer, and patterning the metal into an upper electrode and a coil; etching the piezoelectric layer to form a device area boundary; and etching the silicon substrate to form a cavity between the piezoelectric layer of the device region and the silicon substrate below the piezoelectric layer. The invention can improve the working frequency to the order of hundred megahertz and can be extended to gigahertz.
Description
Technical Field
The invention relates to a Micro Electro Mechanical System (MEMS) piezoelectric magnetic sensor based on Lorentz force, in particular to a Lorentz force magnetic sensor structure which can work under high frequency and has a high dynamic range and a manufacturing process, and belongs to the technical field of piezoelectric magnetic sensors.
Background
Integratable miniaturized mems magnetic sensors have become key components of navigation devices in consumer electronics and ultra-sensitive magnetic field detection applications. Aiming at different application scenes, several different types of magnetic sensors are developed in recent years, including magnetoresistive sensors [1], [2], hall effect sensors [3], [4], magnetoelectric devices [5] based on piezoelectric and magnetostrictive materials and Lorentz force magnetic sensors [6], [7 ]. These devices employ different sensing principles to address the needs of various application scenarios including dynamic range, sensitivity, integration and cost. Magnetoresistive sensors and hall effect sensors are the most widely used sensors. In which hysteresis and saturation effects must be overcome in addition to lorentz force magnetic sensors, they do not provide a larger dynamic range and higher sampling frequency, i.e. operate at higher frequencies. The Lorentz force magnetic sensor does not need magnetic materials, so that hysteresis and magnetic saturation phenomena do not exist, a complex manufacturing process is not needed, and the magnetic sensor with a high dynamic range can be realized. However, the current research on the lorentz force magnetic sensor mainly focuses on sensing by using a resonant capacitive structure, and the sensing principle is mainly divided into amplitude modulation and frequency modulation. In amplitude modulation, the output amplitude of the voltage or current of the magnetic sensor is proportional to the magnetic field, while the principle of frequency modulation relies on the change in resonant frequency caused by the additional stress introduced by the induced lorentz force. Since both schemes use capacitive structures, in order to achieve high sensitivity, higher capacitive charge output needs to be achieved in a vacuum environment, thereby requiring larger resonant structures and vacuum packaging, limiting their potential for increasing operating frequency and dynamic range.
At present, the development of lorentz force magnetic sensors using piezoelectric materials is still in the starting stage, and good sensitivity can be obtained even in the atmosphere due to the stronger electromechanical coupling of the piezoelectric materials. However, in current designs, magnetic sensors are based on fundamental resonant modes, operating at low frequencies (<100MHz), due to the lack of a bottom electrode. In pursuit of sensitivity, the design goal of magnetic sensors is to achieve as high a quality factor as possible, which limits the dynamic range of the device when the operating frequency is low.
[1]W.Wang,Y.Wang,L.Tu,Y.L.Feng,T.Klein,and J.P.Wang,"Magnetoresistive performance and comparison of supermagnetic nanoparticles on giant magnetoresistive sensor-based detection system,"Scientific Reports,vol.4,p.5716,Jul.2014.
[2]P.P.Freitas,R.Ferreira,S.Cardoso,and F.Cardoso,"Magnetoresistive sensors,"Journal of Physics-Condensed Matter,vol.19,no.16,p.165221,Apr.2007.
[3]M.Paranjape,L.M.Landsberger,and M.Kahrizi,"A CMOS-compatible 2-D vertical Hall magnetic-field sensor using active carrier confinement and post-process micromachining,"Sensors and Actuators A:Physical,vol.53,no.1-3,pp.278-283,May.1996.
[4]H.Blanchard,F.De Montmollin,J.Hubin,and R.S.Popovic,"Highly sensitive Hall sensor in CMOS technology,"Sensors and Actuators A:Physical,vol.82,no.1,pp.144-148,May.2000.
[5]Y.Hui,T.Nan,N.X.Sun and M.Rinaldi,"High Resolution Magnetometer Based on a High Frequency Magnetoelectric MEMS-CMOS Oscillator,"in Journal of Microelectromechanical Systems,vol.24,no.1,pp.134-143,Feb.2015.
[6]S.Ghosh and J.E.-Y.Lee,"A Lorentz force magnetometer based on a piezoelectric-on-silicon square-extensional mode micromechanical resonator,"Applied Physics Letters,vol.110,no.25,p.253507,Jun.2017.
[7]M.Li,V.T.Rouf,M.J.Thompson,and D.A.Horsley,"Three-Axis Lorentz-Force Magnetic Sensor for Electronic Compass Applications,"in Journal of Microelectromechanical Systems,vol.21,no.4,pp.1002-1010,Aug.2012.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: how to increase the operating frequency and dynamic range of magnetic sensors.
In order to solve the above problems, the present invention provides a piezoelectric magnetic sensor based on lorentz force, which is characterized by comprising a piezoelectric layer for fixing a coil and an induction electrode, wherein the piezoelectric layer is fixed on a silicon substrate, and at least one pair of induction electrodes and at least one coil are fixed on the piezoelectric layer; the coil is used for driving the resonator to generate resonance and is positioned above the piezoelectric layer; and an upper electrode and a lower electrode in the induction electrodes are respectively fixed on the upper side and the lower side of the piezoelectric layer. The piezoelectric layer is used as a resonance main body and fixed on the silicon substrate, a high-order transverse resonance mode is adopted, and a transverse section of the piezoelectric layer has a plurality of resonance periods; the coil is used for driving the resonator to resonate by means of Lorentz force, and is fixed above the piezoelectric layer and is a driving end of the sensor; the electrodes are used for collecting electric charges generated on two sides of the piezoelectric layer during resonance, the upper electrode and the lower electrode of the induction electrode are fixed on two sides of the piezoelectric layer, and the piezoelectric layer can be provided with a plurality of coil electrodes and induction electrodes for the output end of the sensor.
Preferably, the piezoelectric layer and the silicon substrate are in a strip shape or a disc shape.
Preferably, the coil is rectangular or annular, the end of the coil is a driving end, and the voltage polarities of the two driving ends are opposite.
Preferably, the induction electrode is rectangular or annular.
Preferably, the central axis of the coil is located where the displacement of the resonance period of the piezoelectric layer is maximum, and the ratio of the width of the coil to the width of each resonance period is 0.6 to 0.8, so that the driving efficiency can be maximized; the central axis of the induction electrode is positioned at the position where the stress of the resonance period of the piezoelectric layer is maximum, namely, the position where the induced charge generated by the piezoelectric effect is maximum at the time of resonance, and the ratio of the width to the length of each resonance period is 0.2-0.4, so that the collection efficiency can be maximized. The roots of the induction electrodes with the same polarity are communicated with each other.
Preferably, a cavity is formed between the lower electrode of the piezoelectric layer and the silicon substrate, and the piezoelectric layer is directly connected with the silicon substrate. The piezoelectric layer is directly connected with the silicon substrate or connected with the silicon substrate through the sacrificial layer, the substrate/the sacrificial layer forms a recess below the device area, and the device area is suspended, so that the sound wave is reflected at the interface of the piezoelectric material and the air.
Preferably, the piezoelectric layer is made of aluminum nitride; the coil and the induction electrode are made of metal materials.
Preferably, the coil and the induction electrode are made of aluminum, gold, platinum, molybdenum, copper or tungsten.
Preferably, the operating frequency of the piezoelectric magnetic sensor based on the Lorentz force is 1M-10 GHz.
The invention also provides a preparation method of the piezoelectric magnetic sensor based on the Lorentz force, which is characterized by comprising the following steps of:
step 1): depositing a lower electrode of the induction electrode on the silicon substrate and patterning the lower electrode;
step 2): depositing aluminum nitride on the surface of the lower electrode to serve as a piezoelectric layer;
step 3): depositing a metal on the piezoelectric layer and patterning the metal into an upper electrode of the induction electrode and a coil;
step 4): and etching the piezoelectric layer, defining the boundary of the device region, and etching the silicon substrate by using isotropic etching to form a cavity below the sensor, thus obtaining the piezoelectric magnetic sensor based on the Lorentz force.
The Lorentz force magnetic sensor based on the transverse high-order bulk acoustic wave resonator can improve the working frequency to be in the order of hundred megahertz (MHz), can be expanded to gigahertz (GHz), and can provide a dynamic range of 250kHz when the working frequency is 260 MHz. The working frequency can be specifically designed according to the width of the resonance period of the device, and the specific value is related to the electrode material, the thickness of the electrode and the number of the electrodes. Also, various designs for vertical and horizontal magnetic field detection are provided.
Drawings
Fig. 1a is a sectional view of a piezoelectric magnetic sensor provided in embodiment 1;
fig. 1b is a top view of a piezoelectric magnetic sensor provided in embodiment 1;
fig. 2 is a schematic diagram of a resonance cycle of the piezoelectric magnetic sensor provided in embodiment 1;
fig. 3 is a schematic view of the displacement deformation of the piezoelectric magnetic sensor provided in embodiment 1;
fig. 4a is an admittance characteristics test curve of the piezoelectric magnetic sensor provided in example 1 and an admittance curve obtained by simulation using finite element analysis software;
FIG. 4b is a graph of the admittance versus the applied vertical magnetic field of the piezoelectric magnetic sensor provided in example 1;
fig. 5 is a graph of a relationship between admittance characteristics and a ratio of a coil width to a width of a resonance period, which is obtained by a finite element analysis software simulation of the piezoelectric magnetic sensor provided in example 1;
fig. 6 is a graph of the relationship between the admittance characteristics and the ratio of the width of the induction electrode to the width of the resonance period, which are obtained by simulation of the piezoelectric magnetic sensor provided in example 1 using finite element analysis software;
fig. 7a is a top view of a piezoelectric magnetic sensor provided in embodiment 2;
fig. 7b is a sectional view of a piezoelectric magnetic sensor provided in embodiment 2;
fig. 8a is a top view of a piezoelectric magnetic sensor provided in embodiment 3;
fig. 8b is a sectional view of a piezoelectric magnetic sensor provided in embodiment 3;
fig. 9a is a top view of a piezoelectric magnetic sensor provided in embodiment 4;
fig. 9b is a sectional view of a piezoelectric magnetic sensor provided in embodiment 4;
fig. 10 is a schematic diagram showing a resonance period of the piezoelectric magnetic sensor provided in example 4;
fig. 11a to 11d are schematic views showing states at different steps in the method for manufacturing a piezoelectric magnetic sensor provided in example 5.
Detailed Description
In order to make the invention more comprehensible, preferred embodiments are described in detail below with reference to the accompanying drawings.
Example 1
As shown in fig. 1a, a piezoelectric magnetic sensor provided for the present embodiment includes a piezoelectric layer 13 for fixing a coil 12 and an induction electrode, the piezoelectric layer 13 being fixed on a silicon substrate 14, the piezoelectric layer having seven resonance cycles in a cross-sectional direction; the coil 12 is used for driving the resonator to resonate, and is positioned above the piezoelectric layer 13, and the displacement of the resonance period is maximum; the positive electrodes 11b and the negative electrodes 11a of the two pairs of induction electrodes are respectively fixed at the positions with the maximum resonant period stress at the upper side and the lower side of the piezoelectric layer 13, and the root parts of the electrodes with the same polarity are mutually communicated. As shown in fig. 1b, two etch holes are located on the piezoelectric layer 13, the etch holes being used to define a device region boundary 15, on which the acoustic wave is reflected 15. A basic sensing unit includes at least one coil and a pair of sensing electrodes. The piezoelectric layer 13 and the silicon substrate 14 are in a block shape. A cavity is formed between the device region and the silicon substrate 14, and the piezoelectric layer 13 is directly connected with the silicon substrate 14. The piezoelectric layer is made of aluminum nitride, and the induction electrodes and the coils are made of aluminum, gold, platinum, molybdenum, copper or tungsten.
Fig. 3 shows the displacement and deformation of the principal mode of the lorentz force magnetic sensor when the magnetic field is applied in the vertical upward direction, different gray scales representing different displacement amplitudes as the input coil is energized with current, wherein the current in the two parallel wires has opposite directions, and the lorentz forces acting on the two parallel wires under the action of the in-plane external magnetic field have opposite directions. Since the two parallel wires of the coil are placed at the most displaced positions on the resonance period, the coil can drive the resonator to operate in a transverse high-order mode by virtue of the lorentz force. As an output terminal, the induction electrode is placed at a position where the stress is maximum on the resonance period in order to collect as much charge as possible. Therefore, the working frequency of the magnetic sensor can be obviously improved by utilizing the transverse high-order mode. The symmetrical resonator design provided in this embodiment enables the sensor to operate in the seventh order resonance mode.
The resonance frequency of the lorentz force sensor in the present invention is defined as:
where w is the width of the resonance period, Ep is the equivalent young's modulus, and ρ is the equivalent density. Assuming that the order of the higher-order resonant mode in the sensor is N, the width of the entire sensor is N · w. The operating frequency of the piezoelectric magnetic sensor in this embodiment is 1M to 10 GHz.
Defining the width of the coil as W c Width of the induction electrode is W e The dynamic range is the-3 db bandwidth of the sensor, as shown in FIG. 2. As can be seen from FIG. 4a, when the sensor operates in the seven-order transverse resonance mode and the device region width is 130 μm, the Lorentz force magnetic sensor operates at 261.35MHz and has a dynamic range of 250 kHz. As shown in fig. 4b, the magnetic flux density applied to the sensor increased from 0.11T to 0.28T, and the device exhibited a linear admittance change with a rate of change of 35.5 dB/T. The working frequency of the magnetic sensor provided by the invention is far higher than that of the existing magnetic sensor, and a larger dynamic range can be provided at the same time.
As can be seen from fig. 5, when the thickness of the fixed piezoelectric layer is 1 μm and the thickness of the electrode is 200nm, the admittance characteristics of the sensor increase first and then decrease when the width of the coil and the width of the resonance period change from small to large, and when the ratio is 0.7, the driving efficiency of the coil is optimal. As can be seen from fig. 6, when the thickness of the fixed piezoelectric layer is 1 μm and the electrode thickness is 200nm, when the width of the sensing electrode and the width of the resonance period change from small to large, the admittance characteristic of the sensor increases first and then decreases, and when the ratio is 0.3, the collection efficiency of the sensing electrode is optimal. However, since the resonance frequency is also affected when the width of the electrode is changed, specific adjustment is required when the designed frequency is fixed.
Example 2
As shown in fig. 7a and 7b, the present embodiment is different from embodiment 1 in that the piezoelectric layer 13 and the silicon substrate 14 have a disk-shaped structure, and share one coil and two pairs of sensing electrode rings, each pair of sensing electrode rings includes an upper electrode ring and a lower electrode ring, which are respectively located on two sides of the piezoelectric layer 13.
Example 3
As shown in fig. 8a and 8b, the present embodiment is different from embodiment 1 in that the piezoelectric layer 13 and the silicon substrate 14 have a disk-like structure, and have two turns of coils and two pairs of induction electrode rings, and the two turns of coils have opposite current directions as shown in the figure.
Example 4
As shown in fig. 9a and 9b, the present embodiment provides a piezoelectric magnetic sensor based on lorentz force. According to the principle of the lorentz force, the lorentz force is generated perpendicular to the plane when the direction of the current is still in the plane and the direction of the magnetic field is also in the plane. Therefore, the present embodiment changes the arrangement of the coil and the induction electrodes for different lorentz force directions. It includes a piezoelectric layer 13 for fixing a coil and an induction electrode, the piezoelectric layer 13 being fixed on a silicon substrate 14, as in embodiment 1. As shown in fig. 10, the design provided in this embodiment has four resonance cycles, and based on the characteristics of the mode and the direction of the lorentz force, it is necessary to arrange the coils on the outer two cycles opposite to the displacement direction, and at the same time, in order to collect more charges, the induction electrodes are located at the same positions as in embodiment 1.
Example 5
A preparation method of a piezoelectric magnetic sensor based on Lorentz force comprises the following steps:
step 1): depositing a lower electrode 11a of the sensing electrode on the silicon substrate 14 and patterning the lower electrode 11a, as shown in fig. 11 a;
step 2): depositing aluminum nitride on the surface as a piezoelectric layer 13, as shown in fig. 11 b;
step 3): depositing metal on the piezoelectric layer 13 and patterning into upper electrodes and coils of the sense electrodes, as shown in fig. 11 c;
step 4): the piezoelectric layer 13 is etched to define the device region boundary 15 and the silicon substrate 14 is etched using an isotropic etch to form a cavity under the sensor as shown in figure 11 d.
Claims (9)
1. A piezoelectric magnetic sensor based on Lorentz force is characterized by comprising a piezoelectric layer (13) for fixing a coil (12) and an induction electrode, wherein the piezoelectric layer (13) is fixed on a silicon substrate (14), and at least one pair of induction electrodes and at least one coil (12) are fixed on the piezoelectric layer (13); a coil (12) for driving the resonator into resonance, which is located above the piezoelectric layer (13); an upper electrode (11b) and a lower electrode (11a) in the induction electrodes are respectively fixed on the upper side and the lower side of the piezoelectric layer (13); the central axis of the coil (12) is located at the maximum displacement of the resonance period of the piezoelectric layer (13), and the ratio of the width of the coil (12) to the width of each resonance period is 0.6-0.8; the central axis of the induction electrode (11) is positioned at the position where the stress of the resonance period of the piezoelectric layer (13) is maximum, namely the position where the induction charge generated by the piezoelectric effect is maximum when the piezoelectric layer resonates, and the ratio of the width to the length of each resonance period is 0.2-0.4.
2. The lorentz force based piezoelectric magnetic sensor according to claim 1, wherein the structure of the piezoelectric layer (13), the silicon substrate (14) is strip-shaped or disc-shaped.
3. The lorentz force based piezomagnetic sensor according to claim 1, characterized in that the coil (12) is rectangular or annular, the end of the coil (12) is the driving end, and the polarities of the voltages at the two driving ends are opposite.
4. The lorentz force based piezoelectric magnetic sensor of claim 1, wherein the sensing electrode is rectangular or annular.
5. A lorentz force based piezoelectric magnetic sensor according to claim 1, characterized in that there is a cavity between the lower electrode (11a) of the piezoelectric layer (13) and the silicon substrate (14), and there is a direct connection between the piezoelectric layer (13) and the silicon substrate (14).
6. The lorentz force based piezoelectric magnetic sensor according to claim 1, wherein the piezoelectric layer (13) is made of aluminum nitride; the coil (12) and the induction electrode are both made of metal materials.
7. A lorentz force based piezo-electric magnetic sensor according to claim 1, wherein the coil and sensing electrodes are made of aluminum, gold, platinum, molybdenum, copper or tungsten.
8. The lorentz force based piezo-electric magnetic sensor of claim 1, wherein the lorentz force based piezo-electric magnetic sensor has an operating frequency of 1M-10 GHz.
9. A method of manufacturing a lorentz force based piezo-electric magnetic sensor according to any of the claims 1-8, comprising the steps of:
step 1): depositing a lower electrode (11a) of the induction electrode on a silicon substrate (14) and patterning the lower electrode (11 a);
step 2): depositing aluminum nitride on the surface of the lower electrode (11a) to form a piezoelectric layer (13);
step 3): depositing a metal on the piezoelectric layer (13) and patterning an upper electrode (11b) of the induction electrode and the coil (12);
and step 4): and etching the piezoelectric layer (13), defining a device area boundary (15), and etching the silicon substrate (14) by using isotropic etching to form a cavity below the sensor, namely obtaining the piezoelectric magnetic sensor based on the Lorentz force.
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