CN111463099B - Near-contact focusing type photomultiplier - Google Patents
Near-contact focusing type photomultiplier Download PDFInfo
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- CN111463099B CN111463099B CN202010388791.5A CN202010388791A CN111463099B CN 111463099 B CN111463099 B CN 111463099B CN 202010388791 A CN202010388791 A CN 202010388791A CN 111463099 B CN111463099 B CN 111463099B
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- memory alloy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/28—Vessels, e.g. wall of the tube; Windows; Screens; Suppressing undesired discharges or currents
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Abstract
The invention provides a close-contact focusing type photomultiplier, which comprises a cylindrical tube shell, an indium-tin alloy ring, an annular memory alloy spring, an assembling ring, a ceramic positioning ring, a microchannel plate, a compression ring and a cathode input light window. The compression ring, the microchannel plate and the ceramic positioning ring are sequentially assembled on the upper part of the assembly ring. The annular memory alloy spring is arranged at the lower part of the assembling ring. The cathode input light window is arranged on the top of the compression ring. The indium-tin alloy ring is arranged in the indium storage groove of the cylindrical tube shell. The mounting ring assembly is integrally mounted in the cylindrical casing, and the annular memory alloy spring is mounted in the bottom of the cylindrical casing in an extended state, and the bottom end of the annular memory alloy spring is fixedly connected with the bottom surface of the cylindrical casing. The invention utilizes the temperature control memory effect of the shape memory alloy to obtain accurate near-close distance between the cathode light window and the channel plate in the hot indium sealing process, thereby avoiding the interference of the sealing material to the near-close distance.
Description
Technical Field
The invention relates to the technical field of photomultiplier tubes, in particular to a close-contact focusing type photomultiplier tube realized by utilizing a shape memory alloy.
Background
Photomultiplier (MCP) is a detector that converts weak optical signals into electronic signals and is widely used in the fields of high-energy physics, analytical instruments, oil logging, medical instruments, and military. With the application requirements and performance requirements of special fields, the close-proximity focusing type micro-channel plate photomultiplier has occupied an irreplaceable position in the field of photoelectric detection.
In the prior art, in order to realize the fast time response and the magnetic field resistance of a micro-channel plate type photomultiplier (PMT-MCP), a proximity focusing structure is required to be adopted between a micro-channel plate and a cathode input light window, the proximity distance is usually between 0.2 mm and 0.3mm, and the structure is shown in fig. 1. The hot melting indium sealing technology is widely applied to the cap sealing of the photomultiplier, indium tin alloy is used as welding flux to be melted in an indium storage tank of a tube shell, and an optical window prepared by a cathode is transferred to the upper part of the tube shell through indium sealing transfer equipment to realize the sealing. Therefore, after the indium seal is cooled, because the overflow height d of the indium seal alloy is an uncertain variable, as shown in fig. 2, a non-negligible error exists between the close-proximity distance and the actual design distance, and the close-proximity distance is difficult to be directly and accurately measured after the whole tube is manufactured. Therefore, how to control the proximity distance more accurately becomes a key technology to be solved.
Disclosure of Invention
In order to solve the problems that the close-proximity distance of the traditional photomultiplier structure is caused by errors caused by the height of a sealing material and the close-proximity distance is difficult to test after tube manufacturing, the invention provides the photomultiplier structure for realizing close-proximity focusing by using the shape memory alloy, and the accurate close-proximity distance is obtained between a cathode optical window and a channel plate in the hot indium sealing process by using the temperature control memory effect of the shape memory alloy, so that the interference of a sealing material on the close-proximity distance is avoided.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a close-contact focusing photomultiplier comprises a cylindrical tube shell, an indium tin alloy ring, an annular memory alloy spring, an assembling ring, a ceramic positioning ring, a microchannel plate, a pressing ring and a cathode input light window, wherein:
the assembling ring is made of alloy materials and is provided with a step surface, the step surface limits the upper part and the lower part, and the pressing ring, the microchannel plate and the ceramic positioning ring are sequentially assembled and pressed on the upper part of the assembling ring from top to bottom to form an assembling ring assembly;
the ceramic positioning ring is arranged to provide electrical insulation between the mounting ring and the microchannel plate and to positionally fix the microchannel plate;
the microchannel plate is provided with a peripheral area formed by solid glass tubes and an electron multiplication effective area formed by hollow glass tubes, and the peripheral area surrounds the electron multiplication effective area;
the annular memory alloy spring is arranged at the lower part of the assembling ring, and the inner diameter of the annular memory alloy spring is larger than the diameter of the effective area of the microchannel plate; the phase transition temperature of the annular memory alloy spring is lower than the melting point of the indium tin alloy ring;
the cathode input light window is arranged at the top of the compression ring;
the top of the cylindrical tube shell is provided with an annular groove to form an indium storage tank, and the indium-tin alloy ring is arranged in the indium storage tank;
wherein the assembly ring assembly is integrally installed in the cylindrical tube shell, the annular memory alloy spring is installed at the bottom of the cylindrical tube shell in an extension state, and the bottom end of the annular memory alloy spring is fixedly connected with the bottom surface of the cylindrical tube shell through spot welding or laser welding.
Preferably, the compression ring and the ceramic positioning ring are respectively provided with an electrode on the surface contacting with the microchannel plate, so as to realize the electrical leading-out of the input end and the output end of the microchannel plate.
Preferably, the cylindrical tube shell is prepared by metal and ceramic multilayer sealing, the cylindrical part of the shell is made of alumina or aluminum nitride ceramic, the internal indium storage tank is made of 4J29 alloy material, and the ceramic and the alloy part are connected by oxygen-free brazing filler metal in a brazing mode.
Preferably, the annular memory alloy spring is made of CuZnAl memory alloy.
Preferably, the assembling ring is made of 4J29 alloy material.
Preferably, a conducting layer and a sealing layer are arranged on the cathode input light window, the conducting layer is a NiCr film layer, the thickness of the film layer is 30nA, and the sealing layer is a multilayer metal film layer.
Preferably, the bottom of the cylindrical envelope is provided with a first raised feature and the bottom of the mounting ring is provided with a second raised feature, the first raised feature being in a nesting relationship with the second raised feature when the mounting ring assembly is installed in the cylindrical envelope.
Preferably, in the indium sealing process, when the indium sealing temperature is higher than the phase transition temperature range of the annular memory alloy spring, the annular memory alloy spring is in a shortened state, so that the overall height of the assembly ring, the microchannel plate and the compression ring is lower than the height of the top surface of the inner edge of the indium sealing groove.
Preferably, after the indium seal is completed, when the temperature is reduced to be below the phase transition temperature of the annular memory alloy spring, the indium-tin alloy is in a solidification state, and the annular memory alloy spring is converted from a contraction state to an extension state, so that pressure is applied to the microchannel plate, and the compression ring is in direct contact with the cathode input light window, and the close-proximity focusing is realized.
Therefore, in the near-contact focusing photomultiplier, the supporting spring component is made of the two-way shape memory alloy, the alloy phase change temperature range is lower than the indium sealing temperature, and the memory deformation temperature control range can be better compatible with the cathode manufacturing and indium sealing process temperatures of the photomultiplier, so that the temperature control memory effect of the shape memory alloy is utilized, the accurate near-contact distance is obtained between the cathode optical window and the channel plate in the hot indium sealing process, the accurate near-contact distance is provided, and the interference of the sealing material on the near-contact distance is avoided.
It should be understood that all combinations of the foregoing concepts and additional concepts described in greater detail below can be considered as part of the inventive subject matter of this disclosure unless such concepts are mutually inconsistent. In addition, all combinations of claimed subject matter are considered a part of the presently disclosed subject matter.
The foregoing and other aspects, embodiments and features of the present teachings can be more fully understood from the following description taken in conjunction with the accompanying drawings. Additional aspects of the present invention, such as features and/or advantages of exemplary embodiments, will be apparent from the description which follows, or may be learned by practice of specific embodiments in accordance with the teachings of the present invention.
Drawings
The drawings are not intended to be drawn to scale. In the drawings, each identical or nearly identical component that is illustrated in various figures may be represented by a like numeral. For purposes of clarity, not every component may be labeled in every drawing. Embodiments of various aspects of the present invention will now be described, by way of example, with reference to the accompanying drawings, in which:
FIG. 1 is a schematic diagram of a prior art microchannel plate type photomultiplier.
FIG. 2 is a schematic diagram of an indium seal structure of a microchannel plate type photomultiplier in the prior art.
Fig. 3 is an exploded view of a close-proximity focusing photomultiplier according to the present invention.
FIG. 4 is a schematic diagram of a close-coupled focusing photomultiplier according to the present invention after room temperature conversion.
Fig. 5 is a partial enlarged view of the embodiment of fig. 4 at a.
FIG. 6 is a schematic diagram of the inner structure of the tube shell of the near-contact focusing type photomultiplier tube at 130 ℃ indium sealing
Fig. 7 is a partially enlarged view of a portion a in the embodiment of fig. 6.
FIG. 8 is a schematic diagram showing the internal structure of the tube when the temperature is lowered to a temperature below the spring phase transition temperature and the inverse phase transition temperature after indium sealing
Fig. 9 is a partial enlarged view of the embodiment of fig. 8 at a.
Detailed Description
In order to better understand the technical content of the present invention, specific embodiments are described below with reference to the accompanying drawings.
In this disclosure, aspects of the present invention are described with reference to the accompanying drawings, in which a number of illustrative embodiments are shown. Embodiments of the present disclosure are not necessarily intended to include all aspects of the invention. It should be appreciated that the various concepts and embodiments described above, as well as those described in greater detail below, may be implemented in any of numerous ways, as the disclosed concepts and embodiments are not limited to any one implementation. In addition, some aspects of the present disclosure may be used alone, or in any suitable combination with other aspects of the present disclosure.
Referring to fig. 3-9, a close-proximity focusing photomultiplier according to an embodiment of the present invention includes a cylindrical envelope 1, an ito ring 2, a ring-shaped memory alloy spring 3, a mounting ring 4, a ceramic positioning ring 5, a microchannel plate 6, a clamp ring 7, and a cathode input window 8.
In the illustrated example, the mounting ring 4 is made of an alloy material and has a step surface defining an upper portion and a lower portion, and the clamp ring 7, the microchannel plate 6 and the ceramic positioning ring 5 are sequentially assembled from top to bottom and pressed against the upper portion of the mounting ring 4 to form a mounting ring assembly.
The top of the cylindrical tube shell 1 is provided with an annular groove to form an indium storage tank 12, and the indium-tin alloy ring 2 is arranged in the indium storage tank 12.
Preferably, the cylindrical envelope 1 is prepared by multilayer sealing of metal and ceramic, the cylindrical part of the envelope is made of alumina or aluminum nitride ceramic, the internal indium storage tank 12 is made of 4J29 alloy material, and the ceramic and the alloy part are connected by oxygen-free copper solder. Preferably, the indium tin alloy ring 2 adopts In55Sn48 indium tin alloy.
In other embodiments, it will be appreciated that other features within the cylindrical envelope 1, such as welds, anode output terminals and the first boss member (ring) 11 to be described in the examples below for positioning, are machined from 4J29 alloy.
A ceramic positioning ring 5 is provided for providing electrical insulation between the mounting ring 4 and the microchannel plate 6 and for positionally securing the microchannel plate.
The microchannel plate 6 has a peripheral region composed of a solid glass tube and an electron multiplication effective region composed of a hollow glass tube, the peripheral region surrounding the electron multiplication effective region. The solid edges formed by the peripheral region may be used for supporting and securing the contacts. The microchannel plate 6 may be stacked in a single or double plate to achieve different gains in the practice of the invention.
The annular memory alloy spring 3 is arranged at the lower part of the assembling ring 4, and the inner diameter of the annular memory alloy spring is larger than the diameter of the effective area of the microchannel plate 6; the phase transition temperature of the annular memory alloy spring 3 is lower than the melting point of the indium tin alloy ring 2.
Preferably, the clamping ring 7 and the ceramic positioning ring 5 are respectively provided with electrodes on the surfaces contacting with the microchannel plate 6, so as to realize the electrical leading-out of the input end and the output end of the microchannel plate 6. For example, the electrodes are made on the surfaces of the microchannel plate 6, which are contacted with the ceramic plating or electron beam evaporation coating technology, so as to realize the electrical leading-out of the input end and the output end of the microchannel plate. The height of the compression ring 7 is processed according to the requirement of the close-proximity distance.
As shown in fig. 3, the edges of the compression ring 7 and the ceramic positioning ring 5 are respectively provided with a protrusion for electrode extraction, and correspondingly, a notch is provided at a corresponding position on the mounting ring 4 for the protrusion to pass through for electrode extraction.
As shown in fig. 3, the cathode input window 8 is transferred to the top of the clamp ring 7 after it is prepared, and sealing is achieved.
As shown in fig. 3, the fitting ring assembly is installed as a whole into the cylindrical vessel 1, and the ring-shaped memory alloy spring 3 is fitted into the bottom of the cylindrical vessel 1 in its extended state, and the bottom end of the ring-shaped memory alloy spring 3 is fixedly attached to the bottom surface of the cylindrical vessel 1.
Preferably, the ring-shaped memory alloy spring 3 is formed by processing a two-way shape memory alloy, the austenite and martensite phase transition temperatures of the ring-shaped memory alloy spring are far lower than the melting point of the indium-tin alloy, and the alloy spring which is subjected to memory training in advance can be shortened at high temperature and lengthened at low temperature and has repeated deformation effect. Particularly preferred are springs using CuZnAl memory alloy.
The inner diameter of the annular memory alloy spring 3 is larger than the diameter of the effective area of the micro-channel plate, so that the interference of a spring part when electrons migrate to the anode is avoided.
Preferably, the outer diameter of the annular memory alloy spring 3 should be slightly smaller than the inner diameter of the first protruding part (ring) 11 at the bottom of the cylindrical tube shell 1, so as to ensure that the spring is not affected by up-and-down expansion, and in particular, in the alternative, one end of the annular memory alloy spring 3 can be fixedly connected with the bottom surface of the cylindrical tube shell 1 by spot welding or laser welding.
Preferably, the mounting ring 4 is made of 4J29 alloy material.
Preferably, the cathode input light window 8 is provided with a conductive layer and a sealing layer, the conductive layer is a NiCr film layer, the film thickness is 30nA, and the sealing layer is a multilayer metal film layer, such as glass/Ni (200nm)/Cu (600nm)/Ag (100 nm).
In connection with the sealing process shown in fig. 3 and 4-9, the bottom of the cylindrical envelope 1 is provided with first protruding parts 11 and the bottom of the mounting ring 4 is provided with second protruding parts 41, the first protruding parts 11 and the second protruding parts 41 being in a nested relationship when the mounting ring assembly is mounted in the cylindrical envelope 1.
In the indium sealing process, when the indium sealing temperature is higher than the phase change temperature range of the annular memory alloy spring 3, the annular memory alloy spring 3 is in a shortened state, so that the overall height of the assembling ring 4, the microchannel plate 6 and the compression ring 7 is lower than the height of the top surface of the inner edge of the indium sealing groove.
After indium sealing is finished, when the temperature is reduced to be lower than the phase transition temperature of the annular memory alloy spring 3, the indium-tin alloy is in a solidification state, and the annular memory alloy spring 3 is changed from a contraction state to an extension state, so that pressure is applied to the microchannel plate 6, the compression ring 7 is directly contacted with the cathode input light window 8, and close-proximity focusing is realized.
The assembly process of the photomultiplier, and particularly the indium seal thereof, will be described in more detail with reference to FIGS. 4-9 and FIG. 3.
A. Assembling: firstly, a ceramic positioning ring 5 is arranged in an assembling ring 4, then a microchannel plate 6 is arranged in the ceramic positioning ring 5, finally a pressing ring 7 is arranged above the channel plate 6 to fix the position of the microchannel plate, the annular memory alloy spring 3 in an extension state is arranged in a cylindrical tube shell, the assembling ring assembly is arranged in the cylindrical tube shell 1 and assembled according to the nesting relation of a first protruding part 11 and a second protruding part 41, and the assembled tube shell is shown in figures 4 and 5.
B. Baking and degassing: and sending the assembled cylindrical tube shell into cathode transfer equipment for baking and degassing, wherein in the processes of baking, degassing and heating, the annular memory alloy spring 3 undergoes memory deformation and recovers to an extension state at room temperature.
C. And (3) cathode preparation: when the temperature is increased to 170 ℃ as the cathode manufacturing target temperature, the annular memory alloy spring 3 is in a shortened state after the temperature is higher than the phase transition temperature of the annular memory alloy spring 3, and at this time, because the annular memory alloy spring 3 is shortened, the surface 71 of the compression ring 7 close to the optical window is not higher than the top surface 121 of the inner edge of the indium storage groove 12, as shown in fig. 6 and 7.
D. Indium sealing: and after the cathode is manufactured, the temperature is reduced from 170 ℃ to the indium sealing temperature of 130 ℃, and the cathode is transferred to the light input window to realize sealing.
As shown in fig. 6 and 7, at this time, the temperature of the indium seal is still higher than the phase transition temperature range of the ring-shaped memory alloy spring 3, so that the ring-shaped memory alloy spring 3 is still in a shortened state, and the overall height of the mounting ring, the microchannel plate and the compression ring is lower than the inner edge height 121 of the indium seal groove 12, so that the indium seal is not dislocated or failed due to the contact between the mounting assembly and the cathode input optical window.
After indium sealing is finished, when the temperature is naturally reduced to be lower than the transformation temperature of the memory alloy, the indium tin alloy ring is in a solidification state, the spring is transformed into an extension state shown in figures 8 and 9 from contraction, and therefore pressure is applied to the microchannel plate, the compression ring 7 is in direct contact with the cathode input light window, accurate close-proximity focusing is achieved, and the error influence of the height of the traditional tube shell sealing material on the close-proximity distance is avoided.
Although the present invention has been described with reference to the preferred embodiments, it is not intended to be limited thereto. Those skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the protection scope of the present invention should be determined by the appended claims.
Claims (5)
1. The utility model provides a close-proximity focusing type photomultiplier, characterized in that, includes cylinder tube (1), indium tin alloy ring (2), annular memory alloy spring (3), assembly ring (4), ceramic positioning ring (5), microchannel plate (6), clamp ring (7) and negative pole input light window (8), wherein:
the assembling ring (4) is made of alloy materials and is provided with a step surface, the step surface limits the upper part and the lower part, and the pressing ring (7), the microchannel plate (6) and the ceramic positioning ring (5) are sequentially assembled and pressed on the upper part of the assembling ring (4) from top to bottom to form an assembling ring assembly;
the ceramic positioning ring (5) is arranged for providing electrical insulation between the mounting ring (4) and the microchannel plate (6) and for positionally fixing the microchannel plate;
the microchannel plate (6) is provided with a peripheral area formed by solid glass tubes and an electron multiplication effective area formed by hollow glass tubes, and the peripheral area surrounds the electron multiplication effective area;
the annular memory alloy spring (3) is arranged at the lower part of the assembling ring (4), and the inner diameter of the annular memory alloy spring is larger than the diameter of an effective area of the microchannel plate (6); the phase transition temperature of the annular memory alloy spring (3) is lower than the melting point of the indium tin alloy ring (2);
the cathode input light window (8) is arranged at the top of the compression ring (7);
the top of the cylindrical tube shell (1) is provided with an annular groove to form an indium storage tank (12), and the indium-tin alloy ring (2) is arranged in the indium storage tank (12);
wherein the assembly ring component is integrally installed in the cylindrical tube shell (1), the annular memory alloy spring (3) is installed at the bottom of the cylindrical tube shell (1) in an extension state, and the bottom end of the annular memory alloy spring (3) is fixedly connected with the bottom surface of the cylindrical tube shell (1) through spot welding or laser welding;
the indium-tin alloy ring (2) is made of In55Sn48 indium-tin alloy; the annular memory alloy spring (3) is a CuZnAl memory alloy spring;
in the indium sealing process, when the indium sealing temperature is higher than the phase change temperature range of the annular memory alloy spring (3), the annular memory alloy spring (3) is in a shortened state, so that the overall height of the assembling ring (4), the microchannel plate (6) and the compression ring (7) is lower than the height of the top surface of the inner edge of the indium sealing groove;
after indium sealing is finished, when the temperature is reduced to be lower than the phase transition temperature of the annular memory alloy spring (3), the indium-tin alloy is in a solidification state, and the annular memory alloy spring (3) is changed from a contraction state to an extension state, so that pressure is applied to the microchannel plate (6), the compression ring (7) is in direct contact with the cathode input light window (8), and close-proximity focusing is achieved.
2. The near-contact focusing photomultiplier according to claim 1, wherein the clamping ring (7) and the ceramic positioning ring (5) are provided with electrodes on their respective surfaces in contact with the microchannel plate (6) for electrically leading out the input and output ends of the microchannel plate (6).
3. The close-proximity focusing photomultiplier according to claim 1, wherein the cylindrical envelope (1) is made by metal-ceramic multilayer sealing, the cylindrical part of the envelope is made of alumina or aluminum nitride ceramic, the internal indium storage tank (12) is made of 4J29 alloy material, and the ceramic and the alloy parts are connected by oxygen-free brazing filler metal.
4. The close-proximity focusing photomultiplier according to claim 1, wherein a conductive layer and a sealing layer are provided on the cathode input light window (8), the conductive layer is a NiCr film layer, the thickness of the film layer is 30nA, and the sealing layer is a multilayer metal film layer.
5. The near focus photomultiplier according to claim 1, wherein the cylindrical envelope (1) is provided at the bottom with a first protruding part (11) and the mounting ring (4) is provided at the bottom with a second protruding part (41), the first protruding part (11) and the second protruding part (41) forming a nested relationship when the mounting ring assembly is fitted into the cylindrical envelope (1).
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| CN112259438B (en) * | 2020-10-22 | 2023-10-31 | 中国建筑材料科学研究总院有限公司 | Input window and preparation method and application thereof |
| CN113140439B (en) * | 2021-04-13 | 2023-06-27 | 江苏常宁电子有限公司 | Close-fitting focusing type photomultiplier convenient to assemble |
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| US7420147B2 (en) * | 2001-09-12 | 2008-09-02 | Reveo, Inc. | Microchannel plate and method of manufacturing microchannel plate |
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| CA2702143A1 (en) * | 2001-06-05 | 2002-12-12 | Mikro Systems, Inc. | Methods for manufacturing three-dimensional devices and devices created thereby |
| EP1404501A1 (en) * | 2001-06-05 | 2004-04-07 | Mikro Systems Inc. | Methods for manufacturing three-dimensional devices and devices created thereby |
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