CN111458793A - L NOI-based ridge type optical waveguide end face coupling structure and application thereof - Google Patents
L NOI-based ridge type optical waveguide end face coupling structure and application thereof Download PDFInfo
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- CN111458793A CN111458793A CN202010309288.6A CN202010309288A CN111458793A CN 111458793 A CN111458793 A CN 111458793A CN 202010309288 A CN202010309288 A CN 202010309288A CN 111458793 A CN111458793 A CN 111458793A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12147—Coupler
Abstract
the invention relates to an L NOI-based ridge type optical waveguide end face coupling structure and application thereof, wherein the L NOI-based ridge type optical waveguide end face coupling structure comprises a substrate, an insulating layer, a ridge type waveguide region, a first waveguide core layer flat plate region, a second waveguide core layer flat plate region and a third waveguide core layer.
Description
Technical Field
the invention belongs to the field of integrated optics, and particularly relates to an L NOI-based ridge type optical waveguide end face coupling structure and application thereof.
Background
the coupling between the optical fiber and the waveguide device is an important research content in integrated optics, along with the research and application of the single crystal lithium niobate thin film device, the high-efficiency coupling between the optical fiber and the L NOI device becomes an important problem, common coupling modes are divided into two categories, namely surface grating coupling and end face coupling, the waveguide grating coupler utilizes the diffraction effect of a periodically etched grating on the waveguide to realize the phase modulation of a grating diffraction field, thereby realizing the surface coupling between the optical fiber and the waveguide, but the design of the grating coupler needs complex theoretical calculation, the waveguide coupler is difficult to realize the high-efficiency coupling on the waveguide, and the waveguide coupler is difficult to realize the high-efficiency coupling in the conventional waveguide coupling, and the waveguide coupler has low difficulty in realizing the high-efficiency coupling of the optical waveguide and the vertical coupling of the optical waveguide, and the waveguide coupling is difficult to realize the low-efficiency coupling of the optical waveguide.
Disclosure of Invention
it is therefore one of the primary objectives of the claimed invention to provide an L NOI-based ridge optical waveguide end-coupling structure and its application to at least partially solve at least one of the above-mentioned problems.
in order to achieve the above object, as one aspect of the present invention, there is provided an L NOI-based ridge type optical waveguide end-face coupling structure comprising:
A substrate;
An insulating layer disposed on the substrate;
A ridge waveguide region comprising: a first waveguide core slab region disposed on the insulating layer as a fixed width portion; the first waveguide core layer ridge region is arranged on the first waveguide core layer flat plate region and is a fixed width part; the second waveguide core layer flat plate area is arranged on the insulating layer, is in contact with the first waveguide core layer flat plate area and is a reverse wedge-shaped part; the second waveguide core layer ridge region is arranged on the first waveguide core layer flat plate region and the second waveguide core layer flat plate region, is in contact with the first waveguide core layer ridge region and is a reverse wedge-shaped part; and
And a third waveguide core layer having a refractive index smaller than that of the ridge waveguide region and larger than that of air, and being a fixed width portion.
As another aspect of the invention, the application of the L NOI-based ridge type optical waveguide end face coupling structure in the field of integrated optics is also provided.
based on the technical scheme, the L NOI-based ridge type optical waveguide end face coupling structure and the application thereof have at least one of the following advantages compared with the prior art:
1. the structure of the invention is provided with a reverse wedge-shaped waveguide core layer structure, which can be selected to be a wedge-shaped waveguide core layer structure prepared in a pure horizontal direction, a wedge-shaped waveguide core layer structure prepared in a pure vertical direction, or a wedge-shaped waveguide core layer structure prepared in both the horizontal direction and the vertical direction, so that the expansion of a light field in the waveguide in the horizontal direction and the vertical direction is realized, the high-efficiency matching of a submicron-order optical mode field in an L NOI chip (the thickness of an L N film is less than 1 micron) and a micron-order light field in an optical fiber is realized;
2. In the structure, the second waveguide core layer ridge region and the second waveguide core layer slab region are reduced into the wedge-shaped structure in a layered and asynchronous manner, so that the optical field can be converted into the slab region to be continuously transmitted without the need of a small-size wedge tip of the second waveguide core layer ridge region, and then the leakage of the wedge tip of the slab region is expanded to the third waveguide core layer to be continuously transmitted, so that the difficulty of the preparation process of a small-size structure (small ridge) is reduced;
3. In the structure, the end face of the third waveguide core layer coupled with the end face of the optical fiber is plated with the antireflection film, so that the reflection loss of a light field is reduced, and the coupling efficiency is further improved;
4. the structure of the invention can realize the high-efficiency coupling of the L NOI chip and the optical fiber, and is beneficial to realizing large-scale photonic integration.
Drawings
FIG. 1 is a schematic structural diagram of an L NOI-based ridge optical waveguide end-face coupling structure according to an embodiment of the present invention;
Fig. 2 is a top view of fig. 1.
In the above figures, the reference numerals have the following meanings:
1-a substrate; 2-an insulating layer; 3-a first waveguide core slab region; 4-a first waveguide core ridge region; 5-second waveguide core ridge region; 6-a second waveguide core slab region; 7-a third waveguide core layer; 8-antireflection coating.
Detailed Description
In order that the objects, technical solutions and advantages of the present invention will become more apparent, the present invention will be further described in detail with reference to the accompanying drawings in conjunction with the following specific embodiments.
according to the invention, the layered change of the ridge type optical waveguide core layer in width and height is utilized, and the antireflection film is plated at the coupling end of the third waveguide, so that the expansion of the optical field in the horizontal and vertical directions in the process of transmitting the optical field from the ridge waveguide to the optical fiber is realized, the geometric size of the wedge-shaped tip of the ridge type area of the second waveguide is increased, the process preparation difficulty of a small-size structure is reduced, the mode field matching degree of the L NOI waveguide and the optical fiber is improved, the optical coupling reflection loss is reduced, the cross-scale high-efficiency end face coupling of the submicron optical mode field and the micron optical fiber mode field of the ridge type optical waveguide is finally realized, and the large-scale integration of an optical.
the invention discloses an L NOI-based ridge type optical waveguide end face coupling structure, which comprises:
A substrate;
An insulating layer disposed on the substrate;
A ridge waveguide region comprising: a first waveguide core slab region disposed on the insulating layer as a fixed width portion; the first waveguide core layer ridge region is arranged on the first waveguide core layer flat plate region and is a fixed width part; the second waveguide core layer flat plate area is arranged on the insulating layer, is in contact with the first waveguide core layer flat plate area and is a reverse wedge-shaped part; the second waveguide core layer ridge region is arranged on the first waveguide core layer flat plate region and the second waveguide core layer flat plate region, is in contact with the first waveguide core layer ridge region and is a reverse wedge-shaped part; and
And a third waveguide core layer having a refractive index smaller than that of the ridge waveguide region and larger than that of air, and being a fixed width portion.
In some embodiments of the present invention, the second waveguide core ridge region and the second waveguide core slab region taper asynchronously into a wedge-shaped structure.
in some embodiments of the present invention, the tip directions of the reverse tapered portions of the second waveguide core slab region and the second waveguide core ridge region are both directed to the coupling end of the L NOI chip and the optical fiber.
In some embodiments of the present invention, the direction of decrease of the tapered portions of the second waveguide core slab region and the reverse taper of the second waveguide core ridge region comprises either or a combination of a width direction or a height direction.
In some embodiments of the present invention, the substrate is made of a material including any one of lithium niobate, quartz, or silicon;
In some embodiments of the present invention, the insulating layer is made of a material including silicon dioxide and has a thickness of 1 to 5 μm.
In some embodiments of the present invention, the material used for the ridge waveguide region includes lithium niobate;
In some embodiments of the present invention, the thickness of the ridge waveguide region is less than 1 micron.
In some embodiments of the present invention, the material used for the third waveguide core layer comprises silicon dioxide.
In some embodiments of the present invention, the optical mode field areas of the first waveguide core ridge region and the first waveguide core slab region are both less than 1 square micron;
In some embodiments of the invention, the third waveguide core end face optical mode field diameter is between 2.5 microns and 6 microns.
In some embodiments of the present invention, the end-face coupling structure further includes an antireflection film for reducing reflection of an optical field, and the antireflection film is disposed on the coupling end-face of the fixed-width region of the third waveguide core layer.
the invention also discloses application of the L NOI-based ridge type optical waveguide end face coupling structure in the field of integrated optics.
in one exemplary embodiment, the present invention discloses an L NOI-based optical waveguide end-face coupling structure, including:
a first waveguide core slab region having a material property of L N (lithium niobate) at the uppermost layer of the L NOI system as a fixed width portion;
a first waveguide core ridge region, wherein the material property of the first waveguide core ridge region is L N on the uppermost layer of an L NOI system, and the first waveguide core ridge region is a fixed width part;
the second waveguide core layer flat plate region has the material property of L N on the uppermost layer of the L NOI system and is a reverse wedge-shaped part;
the second waveguide core layer ridge region is L N on the uppermost layer of an L NOI system and is a reverse wedge-shaped part;
a third waveguide core layer having a material property of a refractive index less than L N but greater than air, being a fixed width portion;
The antireflection film is used for reducing the reflection of the end face coupling light field;
A substrate for supporting the monolithic thin film structure;
the portion between the insulating layer, the substrate and the uppermost L N film.
wherein, the insulating layer is adhered to the substrate, L N film layer is adhered to the insulating layer, and the antireflection film is plated on the coupling end face of the third waveguide core layer;
Wherein the substrate is typically lithium niobate, quartz or a silicon material;
Wherein the insulating layer is typically a silicon dioxide material, typically between 1-5 microns thick;
wherein the thickness of L N layer of the ultrathin film device prepared from the uppermost layer of the L NOI is less than 1 micron;
The third waveguide core layer is made of a material with the refractive index close to air as much as possible so as to reduce reflection, and can be made of SiO 2A material;
the tip direction of the reverse wedge-shaped part points to the coupling end of the L NOI chip and the optical fiber;
Wherein the initial ridge waveguide optical mode field area of the first waveguide core layer ridge region is less than 1 square micron;
Wherein, the third waveguide end surface optical Mode Field Diameter (MFD) is 2.5-6 microns;
Wherein, the single mode fiber can be selected as a lens/tapered fiber, and the diameter of the optical mode field is between 2.5 and 6 microns.
the first waveguide core layer flat plate region and the ridge region are normal light transmission waveguide parts in a passive or active device on the L NOI chip;
The second waveguide core slab region can be reduced in the horizontal direction and the vertical direction to form a wedge shape, so that the optical field at the tip of the wedge shape can be expanded in two directions;
The second waveguide core layer ridge region can be reduced in the horizontal direction and the vertical direction to form a wedge shape, so that the optical field at the tip of the wedge shape can be expanded in two directions;
The second waveguide core layer flat plate region and the second waveguide core layer ridge region are reduced into a wedge shape asynchronously, and the second waveguide core layer ridge region is reduced to a certain size, so that a ridge part of a light field is converted into the second waveguide core layer flat plate region to continue transmission;
And the optical mode field in the third waveguide core layer is matched and coupled with the optical mode field of the single-mode optical fiber.
The second waveguide core layer ridge region and the second waveguide core layer slab region are reduced into wedge-shaped structures in a layered and asynchronous mode, so that the optical field can be converted into the slab region to be transmitted continuously without the need for a small-size wedge tip of the second waveguide core layer ridge region, then the leakage is expanded to the third waveguide core layer to be transmitted continuously at the wedge tip of the slab region, and the difficulty of the preparation process of small-size structures (small ridges) is reduced;
The matching degree of the optical mode field in the third waveguide core layer and the optical mode field of the single-mode fiber is increased, the coupling efficiency is increased, and the coupling end face of the third waveguide core layer is plated with an antireflection film, so that the optical field reflection is reduced, and the coupling efficiency is further improved.
If the slab region and the ridge region of the second waveguide core layer start to be reduced into a wedge shape synchronously and finish synchronization, the size of the wedge-shaped tip needs to be very small to simultaneously expand the optical field leakage into a third waveguide core layer for continuous transmission so as to form an optical field matched with the optical fiber;
The flat plate area and the ridge area of the ridge waveguide wedge-shaped structure are technically completed step by step, the size of the tip is limited by the graphic preparation precision, the smaller the size is, the greater the difficulty of the preparation process is, and the lower the yield is;
The ridge region of the second waveguide core layer is firstly reduced into a wedge shape, then the slab region of the second waveguide core layer is also reduced into a wedge shape, the ridge region can convert the optical field into the slab region to continue transmission under the condition that the size is not small, then the leakage is expanded to the third waveguide core layer at the wedge tip of the slab region to continue transmission, and finally mode field matching with the optical fiber is achieved.
the L NOI is provided with a reverse wedge-shaped waveguide core layer structure, and can be selected to be prepared into a wedge shape in a simple horizontal direction and a wedge shape in a simple vertical direction, or prepared into a wedge shape in both the horizontal direction and the vertical direction, so that the expansion of a light field in the waveguide in the horizontal direction and the vertical direction is realized, the sub-micron optical mode field in an L NOI chip (the thickness of an L N film is less than 1 micron) is expanded to realize the efficient matching with the micron-sized light field in the optical fiber, and the coupling efficiency is improved;
The second waveguide core layer ridge region and the second waveguide core layer slab region are reduced into the wedge-shaped structure in a layered and asynchronous mode, so that the optical field can be converted into the slab region to be transmitted continuously without the need for a small-size wedge tip of the second waveguide core layer ridge region, then the leakage is expanded to the third waveguide core layer to be transmitted continuously at the wedge tip of the slab region, and the difficulty of the preparation process of a small-size structure (small ridge) is reduced;
The end face of the third waveguide core layer coupled with the end face of the optical fiber is plated with the antireflection film, so that the reflection loss of an optical field is reduced, the coupling efficiency is further improved, and the large-scale photonic integration is favorably realized.
The technical solution of the present invention is further illustrated by the following specific embodiments in conjunction with the accompanying drawings. It should be noted that the following specific examples are given by way of illustration only and the scope of the present invention is not limited thereto.
as shown in fig. 1 and fig. 2, the present embodiment provides an L NOI-based ridge type optical waveguide end-face coupling structure, which includes a substrate 1, an insulating layer 2, a first waveguide core slab region 3, a first waveguide core ridge region 4, a second waveguide core ridge region 5, a second waveguide core slab region 6, a third waveguide core layer 7, and an antireflection film 8.
an insulating layer 2 is arranged on a substrate 1, an L N thin film layer is arranged on the insulating layer 2, the thickness of the ultrathin thin film layer is smaller than 1 micron, a ridge-type optical waveguide is prepared on a L N thin film on the uppermost layer, a first waveguide core layer ridge-type area 4 and a first waveguide core layer flat area 3 are combined to show the cross section structure of normal optical field transmission, a second waveguide core layer ridge-type area 5 and a second waveguide core layer flat area 6 are prepared into a reverse wedge-shaped structure in a layered and asynchronous mode, the reverse wedge-shaped part faces to the coupling end of an L NOI chip and a single-mode optical fiber, an optical field is transmitted from the first waveguide core layer ridge-type area 3 and the first waveguide core layer ridge-type area 4 to the second waveguide core layer ridge-type area 5 and the second waveguide core layer flat area 6, wherein the optical field leaks to the second waveguide core layer flat area 6 at the tip of the second waveguide core layer ridge-type area 5 and is continuously transmitted, the tip leakage of the second waveguide core layer 6 is diffused to the third waveguide core layer 7 to be continuously transmitted, the optical field is finally coupled with the optical fiber at the end face of the third waveguide core layer 7, the optical field can be coupled with the optical fiber in a mode that the optical field can follow the optical field, the mode (the optical field is larger, the optical field is prepared into the horizontal wedge-type optical waveguide flat area, the optical field is prepared into;
The second waveguide core layer ridge region 5 and the second waveguide core layer flat plate region 6 are reduced into wedges in a layered asynchronous manner, so that the wedge-shaped tip of the second waveguide core layer ridge region 5 can convert an optical field into the second waveguide core layer flat plate region 6 for continuous transmission under the condition that the size is not very small, then the optical field leaks and expands to the third waveguide core layer 7 for continuous transmission at the wedge-shaped tip of the second waveguide core layer flat plate region 6, and finally the mode field matching is realized with an optical fiber, so that the difficulty of the preparation process of a small-size structure (small ridge) on a chip is reduced; in addition, in order to further improve the coupling efficiency of the chip and the optical fiber, an antireflection film 8 is plated on the end face of the coupling end of the third waveguide core layer 7 and the optical fiber, so that the reflection loss of an optical mode field is reduced, and large-scale photonic integration is facilitated.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. an L NOI-based ridge optical waveguide end-face coupling structure comprising:
A substrate;
An insulating layer disposed on the substrate;
A ridge waveguide region comprising: a first waveguide core slab region disposed on the insulating layer as a fixed width portion; the first waveguide core layer ridge region is arranged on the first waveguide core layer flat plate region and is a fixed width part; the second waveguide core layer flat plate area is arranged on the insulating layer, is in contact with the first waveguide core layer flat plate area and is a reverse wedge-shaped part; the second waveguide core layer ridge region is arranged on the first waveguide core layer flat plate region and the second waveguide core layer flat plate region, is in contact with the first waveguide core layer ridge region and is a reverse wedge-shaped part; and
And a third waveguide core layer having a refractive index smaller than that of the ridge waveguide region and larger than that of air, and being a fixed width portion.
2. the L NOI-based ridge optical waveguide end-face coupling structure of claim 1, wherein the second waveguide core ridge region and the second waveguide core slab region taper asynchronously to a wedge-shaped structure.
3. the L NOI-based ridge type optical waveguide end-face coupling structure of claim 1, wherein the tip directions of the reverse wedge-shaped parts of the second waveguide core flat plate region and the second waveguide core ridge region are both directed to the coupling end of the L NOI chip and the optical fiber.
4. the L NOI-based ridge optical waveguide end-face coupling structure of claim 1, wherein the direction of decrease of the tapered portions of the opposing tapered regions of the second waveguide core slab region and second waveguide core ridge region comprises either or a combination of a width direction or a height direction.
5. the L NOI-based ridge type optical waveguide end-face coupling structure of claim 1, wherein the substrate is made of a material including any one of lithium niobate, quartz or silicon;
The insulating layer is made of silicon dioxide and has a thickness of 1-5 microns.
6. the L NOI-based ridge type optical waveguide end-face coupling structure of claim 1, wherein the ridge type waveguide region is made of a material including lithium niobate;
The thickness of the ridge waveguide region is less than 1 micron.
7. the L NOI-based ridge optical waveguide end-face coupling structure of claim 1, wherein the material used for the third waveguide core layer comprises silicon dioxide.
8. the L NOI-based ridge optical waveguide end-face coupling structure of claim 1, wherein the optical mode field areas of the first waveguide core ridge region and the first waveguide core slab region are both less than 1 square micron;
The third waveguide core layer end face optical mode field diameter is between 2.5 microns and 6 microns.
9. the L NOI-based ridge type optical waveguide endface coupling structure according to claim 1, wherein the endface coupling structure further comprises an antireflection film for reducing optical field reflection, the antireflection film being provided on the coupling endface in the fixed width region of the third waveguide core layer.
10. use of an L NOI-based ridge optical waveguide end-face coupling structure as claimed in any one of claims 1 to 9 in the field of integrated optics.
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| CN112596155A (en) * | 2020-12-16 | 2021-04-02 | 东南大学 | Low insertion loss end face coupler based on LNOI material |
| CN113568106A (en) * | 2021-07-21 | 2021-10-29 | 中山大学 | Broadband end face coupler based on lithium niobate thin film and preparation method thereof |
| CN113820801A (en) * | 2021-09-24 | 2021-12-21 | 南京南智先进光电集成技术研究院有限公司 | Ridge waveguide end face coupler based on lithium niobate film |
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| CN113900180A (en) * | 2021-10-22 | 2022-01-07 | 南京南智先进光电集成技术研究院有限公司 | Three-dimensional wedge-shaped lithium niobate thin film waveguide device |
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