CN111434605B - Control method and test method for micro-electromechanical system device - Google Patents

Control method and test method for micro-electromechanical system device Download PDF

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CN111434605B
CN111434605B CN201910034819.2A CN201910034819A CN111434605B CN 111434605 B CN111434605 B CN 111434605B CN 201910034819 A CN201910034819 A CN 201910034819A CN 111434605 B CN111434605 B CN 111434605B
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electrode
state
time interval
signal
mems device
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CN111434605A (en
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妮娜·阿维纳什·吉尔达
蔡连尧
宝华·牛
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00912Treatments or methods for avoiding stiction of flexible or moving parts of MEMS
    • B81C1/0096For avoiding stiction when the device is in use, i.e. after manufacture has been completed
    • B81C1/00976Control methods for avoiding stiction, e.g. controlling the bias voltage

Abstract

Embodiments of the present disclosure relate to a method for controlling and testing a mems device. The present disclosure relates to a method for controlling a mems device. The MEMS device includes a first electrode and a second electrode. The control method includes the following operations. An on signal is provided. The turn-on signal has a rising section and a falling section. Applying a lift-off section to the MEMS device, moving the first electrode to form an open state with the second electrode. Applying the drop down section to the mems device. The first electrode and the second electrode are maintained in an open state. A shut down signal is provided. A closing signal is applied to the MEMS device to change the first electrode and the second electrode from an on state to an off state. The disclosure also provides a method for testing the MEMS device.

Description

Control method and test method for micro-electromechanical system device
Technical Field
The present disclosure relates to mems devices, and more particularly, to a mems device control method and a mems device test method.
Background
For many modern applications, electronic equipment involving semiconductor devices is important. Technological advances in materials and design have resulted in several generations of semiconductor devices, each having smaller and more complex circuitry than the previous generation. In the course of advances and innovations, functional designs (i.e., the number of interconnects per chip area) are typically increased while geometry (i.e., the smallest component that a manufacturing process can produce) is reduced. This advancement has increased the complexity of processing and manufacturing semiconductor devices. Recently, microelectromechanical systems (micro-electro mechanical system, MEMS) devices have been developed and are also commonly associated with electronic devices. MEMS devices are micro-scale devices, typically in the range of less than 1 micron to a few millimeters. MEMS devices include fabrication using semiconductor materials to form mechanical and electrical features. MEMS devices may include some elements (e.g., static or movable elements) for achieving motor functionality. MEMS devices are widely used in a variety of applications. MEMS applications include motion sensors, pressure sensors, printing nozzles, or the like. Other MEMS applications include inertial sensors, such as accelerometers for measuring linear acceleration, and gyroscopes (gyroscillopes) for measuring angular velocity. Furthermore, MEMS applications extend to optical applications such as movable mirrors, and Radio Frequency (RF) applications such as RF switches or the like.
Disclosure of Invention
Embodiments of the present disclosure relate to a method of controlling a mems device including a first electrode and a second electrode, the method comprising: providing an opening signal, wherein the opening signal is provided with a rising section and a falling section; applying the rising section to the mems device, moving the first electrode to form an open state with the second electrode; applying the drop section to the mems device, the first electrode and the second electrode being maintained in the on state; providing a shut down signal; applying the off signal to the mems device to change the first electrode and the second electrode from the on state to the off state.
Another embodiment of the present disclosure relates to a method of controlling a mems device, the mems device including a first electrode and a second electrode, the method comprising: applying a positive current at a first time interval to move the first electrode to form an on state with the second electrode; applying a negative current for a second time interval to maintain the first electrode and the second electrode in the on state; and applying a closing signal at a third time interval to change the first electrode and the second electrode from the opening state to the closing state.
Another embodiment of the present disclosure relates to a method of testing a microelectromechanical systems device, the method comprising: providing the MEMS device, which comprises a first electrode and a second electrode; applying a positive current to the mems device at a first time interval to move the first electrode to form an on state with the second electrode; applying a negative current to the mems device at a second time interval to maintain the first electrode and the second electrode in the on state; and applying a closing signal to the MEMS device at a third time interval to change the first electrode and the second electrode from the on state to the off state.
Drawings
Aspects of the disclosure are best understood from the following detailed description when read in conjunction with the accompanying drawing figures. It should be noted that the various components are not drawn to scale according to standard practice in the industry. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.
FIGS. 1 and 2 are schematic diagrams of MEMS devices according to some embodiments.
FIG. 3 is a schematic diagram of a control signal sequence for a MEMS device according to some embodiments.
Fig. 4 and 5 are schematic diagrams of MEMS devices according to further embodiments.
FIG. 6 is a flow chart illustrating a method of controlling a MEMS device according to some embodiments of the present disclosure.
FIG. 7 is a flow chart illustrating a method of controlling a MEMS device according to further embodiments of the present disclosure.
FIG. 8 is a flow chart illustrating a method of testing a MEMS device according to some embodiments of the present disclosure.
Detailed Description
The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Such are merely examples and are not intended to be limiting. For example, in the following description, the formation of a first member over or on a second member may include embodiments in which the first member and the second member are formed in direct contact, and may also include embodiments in which additional members may be formed between the first member and the second member such that the first member and the second member may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
Embodiments of the present disclosure are discussed in detail below. It should be appreciated, however, that the present disclosure provides many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The particular embodiments discussed are merely illustrative and do not limit the scope of the disclosure.
Moreover, for ease of description, spatially relative terms such as "under," "below," "lower," "above," "upper," "lower," "left," "right," and the like may be used herein to describe one element or member's relationship to another element(s) or member(s), as depicted in the figures. In addition to the orientations depicted in the drawings, spatially relative terms are intended to encompass different orientations of the device in use or operation. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly. It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may be present.
As microelectromechanical systems (MEMS) devices are widely used in a variety of applications, it is often desirable that the structure of one MEMS device accommodate more than one form of MEMS function. For example, a single MEMS architecture may include an accelerometer and a gyroscope. With such MEMS devices, the end product is fabricated as a composite chip and functions with a reduced die size.
On the other hand, one reliability problem observed in MEMS devices is adhesion (stiction) or sticking of the contact surfaces due to surface forces. In general, adhesion is a static friction force that needs to be overcome in order for stationary objects in contact with each other to be able to perform a relative motion. For example, in MEMS devices, when two surfaces having areas below the millimeter range are brought into close proximity, the two surfaces stick together, thus limiting the reliability of the MEMS device. With this size, the primary cause of failure of MEMS devices is electrostatic or charge-induced adhesion.
The present disclosure provides a method for controlling and testing a MEMS device, which can alleviate the above-mentioned problems. FIGS. 1 and 2 are schematic diagrams of MEMS device 100 according to some embodiments. The MEMS device 100 includes a first electrode 102 and a second electrode 104. In some embodiments, MEMS device 100 may also include a first substrate 101, a second substrate 103, and a dielectric layer 105. The first electrode 102 is connected to the first substrate 101, the second electrode 104 is connected to the second substrate 103, and the dielectric layer 105 is disposed over the second electrode 104. It should be noted that, for clarity of illustration, fig. 1 is only a simplified illustration of a portion of the structure of MEMS device 100, e.g., first substrate 101 is shown with only the portion connected to first electrode 102, and the illustrated structure is not intended to limit the disclosure.
The first substrate 101 and/or the second substrate 103 comprise a semiconductor material, such as silicon. In some embodiments, the first substrate 101 and/or the second substrate 103 may comprise other semiconductor materials, such as silicon germanium, silicon carbide, gallium arsenide, or the like. In some embodiments, the first substrate 101 and/or the second substrate 103 are p-type semiconductor substrates (acceptor type) or n-type semiconductor substrates (supplier type). Alternatively, the first substrate 101 and/or the second substrate 103 include another element semiconductor, such as germanium; a compound semiconductor including silicon carbide, gallium arsenide, gallium phosphide, indium arsenide, and/or indium antimonide; an alloy semiconductor comprising SiGe, gaAsP, alInAs, alGaAs, gaInAs, gaInP and/or GaInAsP; or a combination thereof. Alternatively, the first substrate 101 and/or the second substrate 103 are/is a semiconductor-on-insulator. In some embodiments, the material of the first substrate 101 may be the same as the material of the second substrate 103.
In some embodiments, the first substrate 101 may be bonded to the second substrate 103. In some embodiments, the first substrate 101 is a MEMS substrate and the second substrate 103 is a carrier wafer. The bonded first and second substrates 101, 103 include movable MEMS regions, which are regions of the first and second substrates 101, 103 on which movable features or portions of the MEMS structure are formed, the structures of the first and second electrodes 102, 104.
The first electrode 102 is a movable electrode (movable electrode). In some embodiments, the first electrode 102 may be formed of a conductive or semiconductive material, and the first electrode 102 may include polysilicon. In some embodiments, the first electrode 102 is conductive and capacitive. In some embodiments, the first electrode 102 is a movable or vibratable element. In other embodiments, the first electrode 102 is a movable membrane (movable membrane) or a diaphragm (diaphragm). In some embodiments, the first electrode 102 is formed in the first substrate 101. For example: the first substrate 101 may be etched using a plasma etching process to form the first electrode 102.
The second electrode 104 may be formed of a conductor. Alternatively, the second electrode 104 may be formed of a semiconductor material. In some embodiments, the second electrode 104 may comprise a metal, such as gold, silver, aluminum, titanium, copper, tungsten, nickel, chromium, and alloys, oxides, or nitrides thereof.
In some embodiments, displacement of the first electrode 102 relative to the second electrode 104 may cause a change in capacitance between the first electrode 102 and the second electrode 104. In some embodiments, the first electrode 102 is arranged to capture impedance changes caused by gas movement in a recess between it and the first substrate 101. The capacitance or impedance change is then translated into an electrical signal by a circuit coupled to the first electrode 102 or the second electrode 104. In some embodiments, the generated electronic signal is transferred to another device, another substrate, or another circuit for further processing.
Dielectric layer 105 contains silicon, or an oxide thereof. Alternatively, dielectric layer 105 comprises silicon nitride. In some embodiments, the dielectric layer 105 comprises a dielectric material, such as may be an oxide (e.g., ge oxide), oxynitride (e.g., gaP oxynitride), silicon dioxide (SiO 2 ) Nitrogen-bearing oxides (e.g. nitrogen-bearing SiO) 2 ) Doped with nitrogen oxides (e.g. implanted N 2 SiO of (2) 2 ) Silicon oxynitride (Si) x O y N z ) And the like.
In some embodiments, in response to the control signal, the movable first electrode 102 and the second electrode 104 are brought close to each other (as shown in FIG. 2), and the first electrode 102 returns to its original configuration (as shown in FIG. 1). In some embodiments, after the first electrode 102 and the second electrode 104 are proximate to each other, the first electrode 102 may be attached to the dielectric layer 105 and rest for a period of time.
In some conventional control methods, during the rest period of the first electrode 102, since the control signal is a constant voltage signal, charges are injected into the dielectric layer 105 from the first electrode 102, and thus adhesion is caused. To solve the above-mentioned problems, in some embodiments of the present disclosure, a method for controlling a MEMS device is provided.
FIG. 3 is a schematic diagram of a control signal sequence 200 of a MEMS device according to some embodiments. The control signal sequence 200 has an on signal 300 and an off signal 400. In some embodiments, the on signal 300 has a rising section 302 and a falling section 304. The ascending sections 302 and descending sections 304 are, for example, alternately generated, and the number of ascending sections 302 and descending sections 304 is not limiting.
In some embodiments, the rising section 302 is, for example, a positive current, and applying the rising section 302 to the MEMS device 100 moves the first electrode 102 to form an open state with the second electrode 104 (as shown in fig. 2) during a first time interval T1. Here, the on state refers to that the first electrode 102 and the second electrode 104 are close to each other to the first position to form an electrical connection. In some embodiments, the movable first electrode 102 is attached to the dielectric layer 105 and is in electrical contact with the second electrode 104. Since the first electrode 102 is electrically connected to the second electrode 104, the first electrode 102 and the second electrode 104 form an on state.
In some embodiments, the falling segment 304 is, for example, a negative current, and at a second time interval T2, the falling segment 304 is applied to the MEMS device 100. Since the electrostatic force between the first electrode 102 and the second electrode 104 is proportional to the square of the voltage, in the case of a fixed resistance, the voltage is also proportional to the current, and thus the electrostatic force between the first electrode 102 and the second electrode 104 is also proportional to the square of the current. In other words, even though the falling section 304 is negative, the first electrode 102 and the second electrode 104 are still close to each other to form an electrical connection. Therefore, the first electrode 102 is still attached to the dielectric layer 105 and electrically connected to the second electrode 104, so as to maintain the on state.
It should be noted that the number of the rising sections 302 and the falling sections 304 is not limited, for example, in the present embodiment, three rising sections 302 and three falling sections 304 are used for illustration, but not limited thereto. Wherein, the positive current (rising section 302) and the negative current (falling section 304) may be sequentially generated. In other words, a positive current then generates a negative current, which then generates a positive current.
Therefore, by modulating the positive and negative directions of the current in the on signal 300, the problem that a signal such as a fixed voltage causes charges to be injected into the dielectric layer 105 from the first electrode 102, thereby causing adhesion can be avoided.
In some embodiments, the off signal 400 may be provided after the on signal 300. At a third time interval T3, the off signal 400 is applied to the MEMS device 100, causing the first electrode 102 and the second electrode 104 to change from an on state to an off state (as shown in FIG. 1). Here, the off state refers to the first electrode 102 and the second electrode 104 being far away from each other to the second position so as to form an electrical disconnection. In some embodiments, the movable first electrode 102 is far away from the dielectric layer 105 and is electrically disconnected from the second electrode 104. In other words, the first electrode 102 returns to its original flat configuration.
As described above, by modulating the positive and negative directions of current in the turn-on signal 300, for example, using an alternating current signal, the injection of charge from the first electrode 102 into the dielectric layer 105 and thus the sticking problem may be reduced. Furthermore, the time interval (e.g., the first time interval T1 or the second time interval T2) between the rising section 302 and the falling section 304 in the turn-on signal 300 is smaller than the time interval (e.g., the third time interval T3) required for the first electrode 102 to return to the original state, so that the modulation in the turn-on signal 300 does not change the first electrode 102 and the second electrode 104 from the turned-on state to the turned-off state. That is, the electrical delay (electrical delay) of the modulation in the on signal 300 is smaller than the mechanical delay (mechanical delay) of the state change of the first electrode 102, so the modulation in the on signal 300 does not affect the control of the MEMS device, and the adhesion problem between the first electrode 102 and the second electrode 104 can be reduced.
Fig. 4 and 5 are schematic diagrams of MEMS device 400 according to further embodiments. MEMS device 400 includes a first electrode 402 and a second electrode 404. The difference between MEMS device 400 and MEMS device 100 of fig. 1, 2 is that: the MEMS device 400 includes a first substrate 401 and a second substrate 403, but does not include a dielectric layer. A gap 405 is formed between the first electrode 402 and the second electrode 404. The compositions of the first electrode 402, the second electrode 404, the first substrate 401 and the second substrate 403 are described in detail in fig. 1 and 2, and are not described here again.
As described above, in response to the control signal, the movable first electrode 402 and the second electrode 404 approach each other to the first position (as shown in fig. 5), and the first electrode 402 returns to its original configuration (as shown in fig. 4). In some embodiments, after the first electrode 402 and the second electrode 404 are proximate to each other, there is still a gap 405 between the first electrode 402 and the second electrode 404, and the first electrode 402 may rest for a period of time.
In some conventional control methods, during the rest period of the first electrode 402, since the control signal is a signal with a fixed voltage, the charges are dissociated to generate electrostatic force, which causes adhesion problem. Thus, the embodiment of the present disclosure as illustrated in fig. 3 can solve the above-mentioned problems as well.
As described above with respect to fig. 3, by modulating the positive and negative current flow in the on signal 300, the problem of the fixed voltage signal causing the charge to be dissociated from the first electrode 402 and thus to adhere is avoided.
As described above, by modulating the positive and negative directions of current in the turn-on signal 300, for example, using an ac signal, the electrostatic force generated by the dissociation of the charges from the first electrode 402 can be reduced, thereby reducing the sticking problem. Furthermore, the time interval (e.g., the first time interval T1 or the second time interval T2) between the rising section 302 and the falling section 304 in the turn-on signal 300 is smaller than the time interval (e.g., the third time interval T3) required for the first electrode 402 to return to the original state, so that the modulation in the turn-on signal 300 does not change the first electrode 402 and the second electrode 404 from the turned-on state to the turned-off state. In other words, the electrical delay of the modulation in the on signal 300 is less than the mechanical delay of the state change of the first electrode 402, so the modulation in the on signal 300 does not affect the control of the MEMS device and the sticking problem between the first electrode 402 and the second electrode 404 can be alleviated.
FIG. 6 is a flow chart illustrating a method 600 of controlling a MEMS device according to some embodiments of the present disclosure. As shown in fig. 6, the control method 600 has operations 602, 604, 606, and 610. Operation 602 provides an on signal, wherein the on signal has a rising section and a falling section. Operation 604 is to apply a rising section to the MEMS device to move the first electrode to form an open state with the second electrode. Operation 606 applies a drop down segment to the mems device, the first electrode and the second electrode being maintained in an on state. Operation 608 is to provide a shut down signal. Operation 610 is to apply an off signal to the mems device to change the first electrode and the second electrode from an on state to an off state. Since the control method 600 of the MEMS device is described in detail in fig. 1, 2, 3, 4 and 5, the description thereof is omitted. It should be noted that additional operations may be added before, during, and after the method 600.
FIG. 7 is a flow chart illustrating a method 700 of controlling a MEMS device according to further embodiments of the present disclosure. As shown in fig. 7, the control method 700 has operations 702, 704, and 706. Operation 702 is applying a positive current for a first time interval to move a first electrode to form an on state with a second electrode. Operation 704 is applying a negative current for a second time interval to maintain the first electrode and the second electrode in an on state. Operation 706 applies a closing signal to change the first electrode and the second electrode from the on state to the off state at a third time interval. Since the control method 700 of the MEMS device is described in detail in fig. 1, 2, 3, 4 and 5, the description thereof is omitted. It should be noted that additional operations may be added before, during, and after the method 700.
FIG. 8 is a flow chart illustrating a method 800 of testing a MEMS device according to some embodiments of the present disclosure. As shown in fig. 8, the test method 800 has operations 802, 804, 806, and 810. Operation 802 is to provide a microelectromechanical systems device that includes a first electrode and a second electrode. Operation 804 is to apply a positive current for a first time interval to move the first electrode to form an on state with the second electrode. Operation 806 is applying a negative current for a second time interval to maintain the first electrode and the second electrode in an on state. Operation 808 is to apply a closing signal at a third time interval to change the first electrode and the second electrode from the on state to the off state. The method 800 of testing a MEMS device may test the MEMS device to determine if there is a sticking problem with the first electrode and the second electrode in a manner similar to the control methods 600, 700 described above. Since the control methods 600 and 700 are described in detail in fig. 1, 2, 3, 4 and 5, they are not described here again. It should be noted that additional operations may be added before, during, and after the method 800.
In summary, by modulating the positive and negative directions of the current in the on signal, for example, using an ac signal, the electrostatic force generated by injecting charges into the dielectric layer from the first electrode or releasing charges from the first electrode can be reduced, thereby reducing the adhesion problem. Furthermore, the time interval (e.g., the first time interval or the second time interval) between the rising section and the falling section of the turn-on signal is smaller than the time interval (e.g., the third time interval) required for the first electrode to return to the original state, so that the modulation in the turn-on signal does not change the first electrode and the second electrode from the turned-on state to the turned-off state. In other words, the electrical delay of the modulation in the on signal is smaller than the mechanical delay of the state change of the first electrode, so the modulation in the on signal does not affect the control of the MEMS device and the adhesion problem between the first electrode and the second electrode can be alleviated. Furthermore, in the test stage, whether the first electrode and the second electrode have adhesion problems can be determined in advance.
In some embodiments, a method of controlling a microelectromechanical systems device is provided. The MEMS device comprises a first electrode and a second electrode, and the control method comprises the following operations. Providing an on signal, wherein the on signal has a rising section and a falling section. Applying a lift-off section to the MEMS device, moving the first electrode to form an open state with the second electrode. Applying a drop down segment to the MEMS device, the first electrode and the second electrode being maintained in an on state. A shut down signal is provided. A closing signal is applied to the MEMS device to change the first electrode and the second electrode from an on state to an off state.
In other embodiments, a method of controlling a mems device is provided. The MEMS device comprises a first electrode and a second electrode, and the control method comprises the following operations. At a first time interval, a positive current is applied to move the first electrode to form an on state with the second electrode. And applying negative current at a second time interval to maintain the first electrode and the second electrode in an open state. And applying a closing signal at a third time interval to change the first electrode and the second electrode from the on state to the off state.
In other embodiments, a method of testing a MEMS device is provided. The test method includes the following operations. A MEMS device is provided that includes a first electrode and a second electrode. At a first time interval, a positive current is applied to the MEMS device, causing the first electrode to move to form an on state with the second electrode. And applying a negative current to the MEMS device at a second time interval to maintain the first electrode and the second electrode in an on state. And applying a closing signal to the MEMS device at a third time interval to change the first electrode and the second electrode from the on state to the off state.
The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those of ordinary skill in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.
Symbol description
100. 400 MEMS device
101. 401 first substrate
102. 402 first electrode
103. 403 second substrate
104. 404 second electrode
105. Dielectric layer
200. Control signal sequence
300. Opening signal
302. Ascending section
304. Descending section
400. Shut-off signal
T1 first time interval
T2 second time interval
T3 third time interval
600. 700 control method
602. 604, 606, 608, 610, 702, 704, 706, 802, 804, 806, 808 operations
800. Test method

Claims (20)

1. A method of controlling a microelectromechanical systems device, the microelectromechanical systems device comprising a first electrode and a second electrode, the method comprising:
providing an opening signal, wherein the opening signal is provided with a rising section and a falling section;
applying the rising section to the microelectromechanical systems device, moving the first electrode to form an on state with the second electrode, wherein the on state is defined as having the first electrode and the second electrode receive a positive or negative current;
applying the drop section to the mems device, the first electrode and the second electrode being maintained in the on state;
providing a shut down signal; and
applying the off signal to the MEMS device, causing the first electrode and the second electrode to change from the on state to an off state, wherein the off state is defined as causing the first electrode and the second electrode to not receive current.
2. The control method of claim 1, wherein an electrical delay in the turn-on signal from the rising section to the falling section is less than a mechanical delay in the first electrode changing from the on state to the off state.
3. The control method of claim 2, wherein the turn-on signal comprises a plurality of rising segments and a plurality of falling segments, the rising segments and the falling segments being alternately generated.
4. The control method according to claim 1, wherein a time interval of the rising section or the falling section is smaller than a time interval of the closing signal.
5. The control method according to claim 1, wherein the first electrode is a movable electrode.
6. The control method of claim 1, wherein the on state brings the first electrode and the second electrode into proximity with each other to a first position to form an electrical connection.
7. The control method of claim 6, wherein in the first position the first electrode is attached to a dielectric layer comprised by the microelectromechanical systems device.
8. The control method of claim 1, wherein the off state moves the first electrode and the second electrode away from each other to a second position to form an electrical disconnection.
9. A method of controlling a microelectromechanical systems device, the microelectromechanical systems device comprising a first electrode and a second electrode, the method comprising:
applying a positive current at a first time interval to move the first electrode to form an on state with the second electrode;
applying a negative current for a second time interval to maintain the first electrode and the second electrode in the on state, wherein the on state is defined as having the first electrode and the second electrode receive the positive current or the negative current; and
and applying a closing signal to change the first electrode and the second electrode from the opening state to the closing state at a third time interval, wherein the closing state is defined as that the first electrode and the second electrode do not receive current.
10. The control method of claim 9, wherein an electrical delay of modulating from the positive current to the negative current in the on state is less than a mechanical delay of the first electrode changing from the on state to the off state.
11. The control method of claim 10, wherein the positive current and the negative current are generated sequentially.
12. The control method according to claim 9, wherein the first time interval or the second time interval is smaller than the third time interval.
13. The control method according to claim 9, wherein the first electrode is a movable electrode.
14. The control method of claim 9, wherein the on state is the first electrode and the second electrode being proximate to each other to a first position to form an electrical connection.
15. The control method of claim 9, wherein the off state is the first electrode and the second electrode being away from each other to a second position to form an electrical disconnection.
16. A method of testing a microelectromechanical systems device, the method comprising:
providing the MEMS device, which comprises a first electrode and a second electrode;
applying a positive current to the mems device at a first time interval, moving the first electrode to form an on state with the second electrode, wherein the on state is defined as having the first electrode and the second electrode receive a positive or negative current;
applying a negative current to the mems device at a second time interval to maintain the first electrode and the second electrode in the on state;
at a third time interval, a closing signal is applied to the MEMS device, causing the first electrode and the second electrode to change from the on state to an off state, wherein the off state is defined as causing the first electrode and the second electrode to not receive current.
17. The test method of claim 16, further comprising:
and judging whether the first electrode and the second electrode are adhered or not.
18. The test method of claim 16, wherein the first electrode is a movable electrode.
19. The method of claim 16, wherein the on state is the first electrode and the second electrode are proximate to each other to a first position to form an electrical connection.
20. The test method of claim 16, wherein the off state is the first electrode and the second electrode being away from each other to a second position to form an electrical disconnection.
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Publication number Priority date Publication date Assignee Title
WO2003093168A2 (en) * 2001-07-26 2003-11-13 Motorola, Inc. System and methods for mixing within a microfluidic device
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SE0302437D0 (en) * 2003-09-09 2003-09-09 Joachim Oberhammer Film actuator based RF MEMS switching circuits
US7352266B2 (en) * 2004-02-20 2008-04-01 Wireless Mems, Inc. Head electrode region for a reliable metal-to-metal contact micro-relay MEMS switch
US7706042B2 (en) * 2006-12-20 2010-04-27 Qualcomm Mems Technologies, Inc. MEMS device and interconnects for same
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