CN111381436A - Method for manufacturing photomask with pattern - Google Patents
Method for manufacturing photomask with pattern Download PDFInfo
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- CN111381436A CN111381436A CN201811608259.9A CN201811608259A CN111381436A CN 111381436 A CN111381436 A CN 111381436A CN 201811608259 A CN201811608259 A CN 201811608259A CN 111381436 A CN111381436 A CN 111381436A
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- 238000000034 method Methods 0.000 title claims abstract description 101
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 238000012360 testing method Methods 0.000 claims abstract description 105
- 238000010894 electron beam technology Methods 0.000 claims abstract description 60
- 238000000609 electron-beam lithography Methods 0.000 claims abstract description 60
- 238000013461 design Methods 0.000 claims abstract description 55
- 229920002120 photoresistant polymer Polymers 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 5
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical group O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 2
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000005388 borosilicate glass Substances 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000011161 development Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The invention provides a method for manufacturing a photomask with a pattern, which comprises the following steps: providing a design graph and a standard test graph; writing the standard test pattern by adopting a test electron beam lithography process, generating a test photomask, and acquiring the position deviation amount between the test pattern in the test photomask and the standard test pattern; and writing the design pattern by adopting an actual electron beam lithography process to generate a photomask with the pattern, and compensating the design pattern based on the acquired position deviation amount in the actual electron beam lithography process to offset the electron beam position deviation amount caused by the reflected electrons in the actual electron beam lithography process to the electron beam position. The invention improves the position accuracy and the appearance accuracy of the pattern in the photomask and improves the quality of the formed photomask.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a manufacturing method of a photomask with a pattern.
Background
As the area of a semiconductor chip becomes smaller and smaller with the development of a semiconductor manufacturing process, the precision of the semiconductor process becomes more important. In a semiconductor manufacturing process, one important process is photolithography, which is a process of transferring a pattern on a reticle to a photolithographic pattern on a semiconductor.
In the field of integrated circuit manufacturing, photolithography is used to transfer a pattern from a reticle (mask), also known as a reticle or reticle, containing circuit design information onto a wafer (wafer). The photomask is a flat plate which has light transmittance for exposure light, at least one geometric figure which has light shading performance for the exposure light is arranged on the flat plate, the geometric figure is a design figure, light irradiated on a photoresist on the surface of a wafer can be selectively shaded, and finally a corresponding pattern is formed on the photoresist on the surface of the wafer.
However, the accuracy of the patterns of the mask manufactured by the prior art needs to be improved.
Disclosure of Invention
The invention provides a manufacturing method of a photomask with a pattern, which can improve the position accuracy and the appearance accuracy of the pattern in the photomask and improve the quality of the formed photomask.
In order to solve the above problems, the present invention provides a method for manufacturing a photomask having a pattern, comprising: providing a design graph and a standard test graph; writing the standard test pattern by adopting a test electron beam lithography process, generating a test photomask, and acquiring the position deviation amount between the test pattern in the test photomask and the standard test pattern; and writing the design pattern by adopting an actual electron beam lithography process to generate a photomask with the pattern, and compensating the design pattern based on the acquired position deviation amount in the actual electron beam lithography process.
Compared with the prior art, the technical scheme provided by the invention has the following advantages:
according to the technical scheme of the manufacturing method of the photomask with the pattern, a standard test pattern is written by adopting a test electron beam lithography process to generate a test photomask, and the position deviation amount between the test pattern in the test photomask and the standard test pattern is obtained and represents the influence of reflected electrons on the position of an electron beam; and writing a design pattern by adopting an actual electron beam lithography process to generate a photomask with the pattern, and compensating the design pattern based on the acquired position deviation amount in the actual electron beam lithography process to offset or reduce the electron beam position deviation amount caused by reflected electrons to the electron beam position in the actual electron beam lithography process. Therefore, in the embodiment of the present invention, in the actual electron beam lithography process, the influence of the reflected electrons on the electron beam position is considered and the designed pattern is compensated in advance, so that the pattern actually written in the actual electron beam lithography process is the compensated designed pattern, and therefore, the compensation amount and the influence of the reflected electrons on the electron beam position are exactly complementarily offset, thereby improving the pattern position accuracy and the topography accuracy in the formed photomask, and improving the quality of the formed photomask.
Optionally, in order to improve consistency between the obtained position deviation amount and an electron beam influence in an actual electron beam lithography process, process parameters of the test electron beam lithography process are the same as those of the actual electron beam lithography process.
Drawings
FIGS. 1 and 2 are schematic diagrams of a mask manufacturing process;
FIG. 3 is a flow chart illustrating a method for fabricating a patterned mask according to an embodiment of the present invention;
FIG. 4 is a diagram illustrating a standard test pattern provided by an embodiment of the present invention;
fig. 5 to 7 are schematic structural diagrams corresponding to steps of forming a patterned mask according to an embodiment of the present invention.
Detailed Description
As can be seen from the background art, the pattern accuracy of the mask fabricated by the prior art needs to be improved.
Now, in conjunction with a photomask manufacturing process, fig. 1 and 2 are schematic structural diagrams of a photomask manufacturing process, in which the process steps for forming a photomask include: referring to fig. 1, a carrier 10 and a mask 20 on the carrier 10 are provided; forming a photoresist layer 30 on the surface of the mask plate 20; the design pattern is transferred to the photoresist layer 30 in a direct writing manner of electron beam lithography, and the photoresist layer 30 is exposed.
Referring to fig. 2, the exposed photoresist layer 30 (see fig. 1) is developed to expose a portion of the surface of the reticle 20 (see fig. 1); etching and removing the exposed mask plate 20 to form a photomask 40 with a pattern; the photoresist layer 30 is removed.
The pattern in the mask 40 formed as described above has positional deviation and topographical deviation from the design pattern, resulting in poor pattern accuracy in the mask 40. It has been found that in electron beam lithography, an electron source (e.g., an electron gun) generates a plurality of electrons that are accelerated and focused to form an electron beam 50 that is projected onto the photoresist layer 30; the electron beam 50 may be focused magnetically or electrically and scanned across the photoresist layer 30 to form the desired design pattern. However, the projection of the electron beam 50 onto the photoresist layer 30 generates reflected electrons 31, and these reflected electrons 31 repel each other and cause the position of the electron beam projected onto the photoresist layer 30 to shift, thereby causing the pattern in the finally formed mask 40 to deviate from the designed pattern.
The matching degree between the pattern in the mask 40 and the design pattern depends on the pattern density of the design pattern. Specifically, if the pattern density of some area on the exposure area is high, it means that the amount of reflected electrons 31 concentrated on the area is large, the amount of shift in the position of the electron beam 50 on the area due to the influence of the reflected electrons 31 is relatively large, and the amount of shift in the position of the electron beam 50 on the area with low pattern density due to the influence of the reflected electrons 31 is relatively small.
In order to know the alignment accuracy between the patterns in the reticle 40 and the design patterns, a mask frame (mask frame) is generally disposed around the mask plate 20 and has alignment marks thereon. However, since the actual conditions around the alignment mark on the mask frame do not faithfully reflect the deviation of the electron beam projection position on the photoresist layer 30 after the reflected electrons 31 repel each other, even though the alignment mark on the mask frame shows the alignment between the pattern on the mask 40 and the design pattern, the pattern on the mask 40 may actually deviate from the design pattern, resulting in a false determination of the yield of the mask 40.
In order to solve the above problems, the present invention provides a method for manufacturing a mask, which takes into account the influence of reflected electrons on the position of an electron beam when a design pattern is written by using an actual electron beam lithography process, thereby improving the position accuracy and the topography accuracy of the pattern formed in the mask.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
FIG. 3 is a flowchart illustrating a method for fabricating a patterned mask according to an embodiment of the present invention.
Referring to fig. 3 and fig. 4 in combination, wherein fig. 4 is a schematic diagram of a standard test pattern provided by the embodiment of the invention, step S1 is executed to provide a design pattern and the standard test pattern 100.
The design pattern is a preset pattern which needs to be generated in the photomask, and can be determined according to different semiconductor process requirements.
The standard test pattern 100 is used to perform a test electron beam lithography process to obtain the effect of reflected electrons on the position of the electron beam.
In this embodiment, the pattern shape of the standard test pattern 100 is a stripe. In other embodiments, the pattern shape in the standard test pattern may also be other irregular shapes.
Since the design pattern generally includes a pattern extending along the X direction and a pattern extending along the Y direction, in order to improve the matching degree between the test reticle generated based on the standard test pattern 100 and the reticle required to be generated by the actual process, so that the subsequently obtained position deviation amount can reflect the influence of reflected electrons in the reticle process required to be generated by the actual process to the maximum extent, in this embodiment, the pattern in the standard test pattern 100 includes a stripe pattern extending along the X direction and a stripe pattern extending along the Y direction, and the X direction is perpendicular to the Y direction
The pattern density in the standard test pattern 100 should not be too low or too high, wherein the pattern density can also be a pattern loading (pattern loading). If the pattern density in the standard test pattern 100 is too low, the amount of reflected electrons affecting the electron beam position is small in the subsequent process of testing the electron beam lithography process based on the standard test pattern 100, so that the difference between the correspondingly obtained position deviation amount and the deviation amount of the reflected electrons affecting the electron beam position in the actual process is large; if the pattern density in the standard test pattern 100 is too high, the amount of reflected electrons affecting the electron beam position is too large in the subsequent process of performing the test electron beam lithography process based on the standard test pattern 100, and therefore, the difference between the obtained position deviation amount and the deviation amount of the reflected electrons affecting the electron beam position in the actual process is relatively large.
For this reason, the pattern density in the standard test pattern 100 is 25% to 40%. In this embodiment, the pattern density in the standard test pattern 100 is 30%, and the influence of the reflected electrons on the electron beam position in the process of testing the electron beam lithography process performed on the basis of the standard test pattern 100 in the pattern density range is close to the influence of the reflected electrons on the electron beam position in the actual process.
And step S2 is executed, the standard test pattern 100 is written by using a test electron beam lithography process, a test reticle is generated, and the position deviation between the test pattern in the test reticle and the standard test pattern is obtained.
In this embodiment, the standard test pattern 100 is used to simulate the influence of reflected electrons in the actual electron beam lithography process; the position deviation amount is used for reflecting the influence of the reflected electrons on the position of the electron beam.
Specifically, the step of generating the test reticle by using the test electron beam lithography process comprises: providing a test mask; forming a test photoresist layer on the surface of the test mask; determining the position of an electron beam projected on the test photoresist layer according to the standard test pattern 100, carrying out test exposure treatment on the test photoresist layer, and writing the standard test pattern 100 into the test photoresist layer in an electron beam direct writing mode; testing and developing the photoresist layer subjected to the testing exposure treatment to expose part of the testing mask plate; and etching to remove the exposed test mask plate to form a test photomask with a test pattern.
In the test exposure process, reflected electrons are formed when the electron beams are projected onto the test photoresist layer, and the reflected electrons have an influence on the position of the electron beams projected onto the test photoresist layer after being gathered, so that the position of the electron beams is shifted, and therefore, a pattern actually directly written into the test photoresist layer by the electron beams has a deviation from the standard test pattern 100, so that the position of the finally formed test pattern is deviated from the position of the preset standard test pattern 100.
In this embodiment, the method for obtaining the position deviation between the test pattern in the test reticle and the standard test pattern 100 includes: before the test electron beam lithography process is carried out, an alignment mark is arranged on a test mask, the standard test pattern is provided with an alignment mark pattern, and the alignment mark is a position where the alignment mark pattern is written into the test mask under an ideal condition; in the test electron beam lithography process, writing the alignment mark pattern into a test photoresist layer, and correspondingly forming a test mark pattern in a test photomask; and acquiring the position deviation between the test mark pattern and the alignment mark, wherein the position deviation is the position deviation between the test pattern in the test photomask and a standard test pattern.
In this embodiment, the process conditions of the test electron beam lithography process are the same as the process conditions of the actual electron beam lithography process. Specifically, the electron beam energy adopted by the test electron beam lithography process is the same as the electron beam energy of the actual electron beam lithography process, and the exposure time, the developer solution parameter and the development time adopted by the test electron beam lithography process are the same as the exposure time, the developer solution parameter and the development time adopted by the actual electron beam lithography process.
And step S3, writing the design pattern by using an actual electron beam lithography process, generating a mask with a pattern, and compensating the design pattern based on the acquired position deviation amount during the actual electron beam lithography process.
And compensating the design pattern based on the acquired position deviation amount so as to offset the electron beam position deviation amount caused by the reflected electrons to the electron beam position in the actual electron beam lithography process.
Specifically, in the actual electron beam lithography process, the electron beam projected onto the photoresist layer generates reflected electrons, and the reflected electrons are collected to affect the position of the electron beam, so that the position of the electron beam projected onto the photoresist layer is shifted. In this embodiment, in order to compensate or offset the influence of the reflected electrons on the electron beam position, in the actual electron beam lithography process, the design pattern is compensated based on the obtained position deviation amount, that is, the influence of the reflected electrons on the electron beam position is taken into consideration in the actual electron beam lithography process, so that the pattern actually written in the actual electron beam lithography process is not the design pattern any longer, but a corrected pattern obtained by compensating the design pattern based on the position deviation amount.
The influence of reflected electrons on the position of the electron beam is considered in the actual electron beam lithography process, so that the finally generated pattern in the photomask with the pattern conforms to the design pattern, and the pattern in the photomask and the design pattern are high in alignment accuracy and shape matching degree. In this embodiment, the pattern in the patterned photomask is identical to the design pattern.
In this embodiment, in the actual process of the electron beam lithography, the method of compensating the design pattern based on the position deviation amount includes: compensating and correcting the design graph based on the position deviation amount to obtain a corrected graph; and writing the corrected pattern into a photomask by adopting an actual electron beam lithography process to generate the photomask with the pattern.
The position deviation amount is a vector and comprises a position deviation value and a position deviation direction. When the design pattern is compensated and corrected, not only the positional deviation value but also the positional deviation direction need to be taken into consideration, for example, when the positional deviation amount indicates that the test pattern is deviated in the a → a1 direction with respect to the standard test pattern 100, the positional deviation value is compensated for in the a1 → a direction with respect to the design pattern.
A method of compensating the design pattern based on the positional deviation amount during the actual electron beam lithography process will be described in detail with reference to the accompanying drawings.
Referring to fig. 5 to 7, fig. 5 to 7 are schematic structural diagrams corresponding to steps of forming a patterned mask according to an embodiment of the present invention.
Referring to fig. 5, a substrate 200, a reticle 201 positioned on the substrate 200, and a photoresist layer 202 positioned on a surface of the reticle 201 are provided; and determining the position of the electron beam projected on the photoresist layer 201 according to the corrected graph, and carrying out exposure treatment on the photoresist layer 202.
The substrate 200 provides an operation platform for performing an exposure process and a subsequent development process, and the substrate 200 also provides a support function for the mask 201.
The substrate 200 is made of a light-transmitting material. In this embodiment, the substrate 200 is made of quartz glass. In other embodiments, the material of the substrate may also be borosilicate glass.
In this embodiment, the mask 201 is made of chromium. In order to improve the adhesion between the mask 201 and the substrate 200, an adhesion layer may be formed on the surface of the substrate 200 before the mask 201 is formed. The material of the adhesion layer is chromium oxide or chromium nitride.
The material of the photoresist layer 202 may be a positive photoresist material or a negative photoresist material.
In this embodiment, before the photoresist layer 202 is formed, an anti-reflection layer may be further formed on the surface of the mask 201, and the anti-reflection layer is favorable for avoiding adverse effects of light reflected by the mask 201 on the electron beam. The anti-reflection layer is made of chromium sesquioxide.
When the electron beam is projected onto the photoresist layer 202 during the exposure process, even if reflected electrons, which affect the position where the electron beam is actually projected, are collected on the photoresist layer 202, since the correction pattern takes into account the influence of the reflected electrons on the position of the electron beam, the position where the electron beam is actually projected onto the photoresist layer 202 in the present embodiment is as expected.
Referring to fig. 6, the exposed photoresist layer 202 is developed to expose a portion of the reticle 201.
When the photoresist layer 202 is a positive photoresist material, the developing solution adopted in the developing treatment is a positive photoresist developing solution; when the photoresist layer 202 is a negative photoresist material, the developing solution used in the developing process is a negative photoresist developing solution.
Referring to fig. 7, the exposed mask 201 is removed by etching until the surface of the substrate 200 is exposed, and a photomask 211 with a pattern is generated; the photoresist layer 202 is removed (refer to fig. 6).
In this embodiment, the developed photoresist layer 202 is used as a mask, the exposed mask 201 is removed by etching using a dry etching process, and a pattern written in the photoresist layer 202 by using an actual electron beam lithography process is transferred into the mask 201, thereby forming a photomask 211 having a pattern.
In this embodiment, when the design pattern is written into the photoresist layer 202, the influence of the reflected electrons on the electron beam position is considered, so that the pattern finally formed in the mask 211 in this embodiment has high position accuracy and a desired shape, which is beneficial to improving the quality of the formed mask 211 and reducing the fraction defective of the mask 211.
In another embodiment of the present invention, in the actual process of the electron beam lithography process, the method of compensating the design pattern based on the position deviation amount includes: the design pattern corresponds to a design electron beam projection position in an electron beam lithography process, and the design electron beam projection position is compensated and corrected based on the position deviation amount to obtain a corrected electron beam projection position; and writing the design pattern in a photomask by adopting an actual electron beam lithography process and adopting the electron beam with the corrected electron beam projection position to generate the photomask with the pattern.
The following table is a comparison table of the alignment of the patterned photomask generated based on the same design pattern in the prior art and the present embodiment.
TABLE 1
And selecting points with the same X direction and Y direction for comparison, wherein the Mean Value of the points selected in the X direction is 0.00000nm, and the Mean Value of the points selected in the Y direction is 0.00000 nm. As can be seen from the above table, for the point selected in the X direction, the maximum Max 3 σ of the selected point in the prior art at the 3 σ criterion is greater than the maximum Max 3 σ of the 3 σ criterion in the present embodiment; similarly, for the point selected in the Y direction, the maximum Max 3 σ of the 3 σ criterion in the prior art is greater than the maximum Max 3 σ of the 3 σ criterion in this embodiment; the absolute Value of the minimum Min Value in the prior art is greater than that of the minimum Min Value in the present embodiment for both the points selected in the X direction and the points selected in the Y direction. The Max 3 σ value is a parameter which can best reflect the position deviation amount between the pattern in the photomask and the design pattern, and it can be seen that the pattern position accuracy of the photomask generated by the embodiment is obviously superior to the pattern position accuracy of the photomask generated by the prior art.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (14)
1. A method for manufacturing a photomask with a pattern, comprising:
providing a design graph and a standard test graph;
writing the standard test pattern by adopting a test electron beam lithography process, generating a test photomask, and acquiring the position deviation amount between the test pattern in the test photomask and the standard test pattern;
and writing the design pattern by adopting an actual electron beam lithography process to generate a photomask with the pattern, and compensating the design pattern based on the acquired position deviation amount in the actual electron beam lithography process to offset the electron beam position deviation amount caused by the reflected electrons in the actual electron beam lithography process to the electron beam position.
2. The method of claim 1, wherein the pattern in the patterned reticle corresponds to the design pattern.
3. The manufacturing method according to claim 1, wherein the process parameters of the test electron beam lithography process are the same as the process parameters of the actual electron beam lithography process.
4. The manufacturing method according to claim 1, wherein the method of compensating the design pattern based on the positional deviation amount during the actual electron beam lithography process includes:
compensating and correcting the design graph based on the position deviation amount to obtain a corrected graph;
and writing the corrected pattern into a photomask by adopting an actual electron beam lithography process to generate the photomask with the pattern.
5. The method of manufacturing according to claim 4, wherein the process step of generating the patterned reticle comprises: providing a substrate, a mask plate positioned on the substrate and a photoresist layer positioned on the surface of the mask plate; determining the position of an electron beam projected on a photoresist layer according to the corrected graph, and carrying out exposure treatment on the photoresist layer; developing the photoresist layer after exposure treatment to expose part of the mask plate; etching and removing the exposed mask until the surface of the substrate is exposed; and removing the photoresist layer.
6. The manufacturing method according to claim 5, wherein a material of the substrate includes quartz glass or borosilicate glass.
7. The method of manufacturing of claim 5, wherein the material of the reticle comprises chromium.
8. The method of claim 7, further comprising, prior to forming the reticle, forming an adhesion layer on the substrate surface; before forming the photoresist layer, forming an anti-reflection layer on the surface of the mask.
9. The manufacturing method according to claim 8, wherein a material of the adhesion layer is chromium oxide or chromium nitride; the anti-reflection layer is made of chromium sesquioxide.
10. The manufacturing method according to claim 1, wherein the method of compensating the design pattern based on the positional deviation amount during the actual electron beam lithography process includes:
the design pattern corresponds to a design electron beam projection position in an electron beam lithography process, and the design electron beam projection position is compensated and corrected based on the position deviation amount to obtain a corrected electron beam projection position;
and writing the design pattern in a photomask by adopting an actual electron beam lithography process and adopting the electron beam with the corrected electron beam projection position to generate the photomask with the pattern.
11. The manufacturing method according to claim 1, wherein the pattern density in the standard test pattern is 25% to 40%.
12. The manufacturing method according to claim 11, wherein the pattern density in the standard test pattern is 30%.
13. The manufacturing method according to claim 1, wherein the pattern shape in the standard test pattern is a stripe shape.
14. The manufacturing method according to claim 13, wherein the patterns in the standard test pattern include a stripe pattern extending in an X direction and a stripe pattern extending in a Y direction.
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| WO2022142364A1 (en) * | 2021-01-04 | 2022-07-07 | 长鑫存储技术有限公司 | Method and apparatus for correcting placement error of mask |
| CN114721226A (en) * | 2021-01-04 | 2022-07-08 | 长鑫存储技术有限公司 | Method and device for correcting photomask placement error |
| CN114721226B (en) * | 2021-01-04 | 2023-08-25 | 长鑫存储技术有限公司 | Photomask placement error correction method and device |
| CN113534602A (en) * | 2021-07-16 | 2021-10-22 | 长鑫存储技术有限公司 | Photomask and preparation method thereof |
| CN113534602B (en) * | 2021-07-16 | 2024-05-14 | 长鑫存储技术有限公司 | Method for preparing photomask and photomask |
| CN114326330A (en) * | 2022-01-21 | 2022-04-12 | 澳芯集成电路技术(广东)有限公司 | Method and device for optimizing photoetching pattern |
| CN114326330B (en) * | 2022-01-21 | 2023-09-26 | 锐立平芯微电子(广州)有限责任公司 | Photoetching pattern optimization method and device |
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| CN111381436B (en) | 2024-03-08 |
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