CN111367096A - Terahertz amplitude modulator based on flexible metamaterial - Google Patents
Terahertz amplitude modulator based on flexible metamaterial Download PDFInfo
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- CN111367096A CN111367096A CN202010146676.7A CN202010146676A CN111367096A CN 111367096 A CN111367096 A CN 111367096A CN 202010146676 A CN202010146676 A CN 202010146676A CN 111367096 A CN111367096 A CN 111367096A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0126—Opto-optical modulation, i.e. control of one light beam by another light beam, not otherwise provided for in this subclass
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/13—Function characteristic involving THZ radiation
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Abstract
The invention discloses a terahertz amplitude modulator based on a flexible metamaterial, and belongs to the technical field of electromagnetic functional devices. Comprises a flexible substrate and a unit modulation structure layer completely deposited on the flexible substrate; the unit modulation structure layer is formed by sequentially arranging m amplitude modulation unit structures in a copying translation mode, wherein m is more than or equal to 1; the amplitude modulation unit structure comprises a metal structure and vanadium dioxide; the metal structure is an I-shaped structure consisting of 2 transverse rods and 1 vertical rod; the vertical rod is a dipole resonance rod with an opening in the middle, the opening divides the vertical rod into an upper vertical rod and a lower vertical rod, and the end parts of the two ends, close to each other, of the upper vertical rod and the lower vertical rod are connected with metal branches; the vanadium dioxide is filled in the opening to communicate the upper vertical rod with the lower vertical rod. The terahertz amplitude modulator provided by the invention realizes dynamic amplitude regulation and control on a curved surface with any curvature, and has the characteristics of simple structure, easiness in manufacturing, good tuning effect and stable tuning function.
Description
Technical Field
The invention belongs to the technical field of electromagnetic functional devices, and particularly relates to a terahertz amplitude modulator based on a flexible metamaterial, which aims at a terahertz waveband dynamic functional device.
Background
At present, tunable terahertz devices are not only the hot direction of device research, but also a development trend of future device research. The research of tunable devices based on metamaterials typically changes the frequency or amplitude of the resonance point based on different external conditions, such as electric field, magnetic field, temperature, optical excitation, etc. The tunable terahertz modulator is designed by controlling the conductivity of a photoconductive semiconductor material through laser or controlling the resistance of a superconducting material through temperature, and the like. This is a much more cost effective approach than previously obtained by changing the dimensions of the structure to achieve tunability, and can be achieved without the need for multiple manufacturing tests, one template.
The terahertz modulation technology can be generally divided into 2 methods by differentiating according to a modulation mode: one is indirect modulation, namely based on the existing microwave communication technology, a low-frequency microwave band modulation mode is adopted, and the communication process is realized from a frequency doubling technology to a terahertz frequency band; the other type is direct modulation, namely a modulation signal is directly loaded on a terahertz source, so that terahertz wireless communication is realized.
From the current research situation, it is generally considered that the direct modulation can fully utilize the characteristics of terahertz waves to realize high-speed large-capacity communication. The existing terahertz direct modulation device mostly adopts an array structure, and adopts a metamaterial structure mode to realize modulation of terahertz waves. The array basic structure comprises basic structures of an open resonant ring, a cross shape, an I shape and the like and deformation thereof. For terahertz wave amplitude modulation, the I-shaped structure has the excellent characteristics of simple structure, obvious electromagnetic wave response mode and the like. The structure meets the circuit requirement of the electric control type modulator, and can realize high-speed modulation when being applied to the electric control type modulator. However, such a high-speed modulator has extremely high requirements for circuit wiring, and the wiring after a large array affects the structural modulation effect, thereby reducing the modulation effect of the modulator. Meanwhile, the modulator comprises an electric control type modulator and other modulators, most of the modulators adopt hard substrates such as quartz, sapphire, high-resistance silicon or silicon carbide, and the like, and after molding, the modulators cannot be bent and cannot be used on many curved surface and common-type devices, so that the application of the modulators is limited to a certain extent.
The flexible metamaterial is a research hotspot in the world all the time, obtains great progress in application research in terahertz filters, absorbers and sensors, and makes great contribution to the technical fields of military stealth, secret communication and the like. The flexible metamaterial is used for constructing a more complex device or used as an adhesion layer of a curved surface device, and is applied to a terahertz waveband, so that the application range of the terahertz functional device is greatly expanded, but in specific application, the modulation effect is poor due to the adoption of an electromagnetic loss principle.
Disclosure of Invention
Aiming at the defects in the prior art and solving the problems of poor modulation effect, weak adjustability on a curved surface and low stability of the conventional terahertz modulator based on a flexible substrate, the invention provides the terahertz amplitude modulator based on the flexible metamaterial.
The technical scheme adopted by the invention is as follows:
a terahertz amplitude modulator based on a flexible metamaterial comprises a flexible substrate and a unit modulation structure layer which is completely deposited on the flexible substrate.
The unit modulation structure layer is used as an array structure and is formed by sequentially arranging m amplitude modulation unit structures in a copying translation mode, wherein m is larger than or equal to 1, and a space is reserved between the amplitude modulation unit structures in the arrangement and is larger than 0.
The amplitude modulation unit structure is used as an electromagnetic resonance structure and comprises a metal structure and vanadium dioxide; the metal structure is an I-shaped structure consisting of 2 transverse rods and 1 vertical rod, the vertical rod is a dipole resonance rod with an opening in the middle, the opening divides the vertical rod into an upper vertical rod and a lower vertical rod, and the end parts of the two adjacent ends of the upper vertical rod and the lower vertical rod are connected with metal branch knots; the vanadium dioxide is filled in the opening to communicate the upper vertical rod with the lower vertical rod.
Further, the m amplitude unit modulation structures are arranged in a matrix.
Furthermore, the size of the opening and the length and width of the metal branch can be adjusted, and the opening can be used as a frequency point tuning component of the terahertz amplitude modulator.
Further, the flexible substrate is mica or Polydimethylsiloxane (PDMS).
The terahertz amplitude modulator based on the flexible metamaterial provided by the invention is used as an amplitude modulation unit structure of an electromagnetic resonance structure, and vanadium dioxide is used as a component part of an I-shaped structure and is directly filled in the I-shaped metal structure. According to the dipole resonance principle, the modulation of the terahertz wave amplitude is realized by combining the phase change characteristic of a vanadium dioxide material, and the method specifically comprises the following steps: under non-laser irradiation, vanadium dioxide is in a medium state, the amplitude modulation unit structure is an I-shaped metal structure with an opening, the polarization direction of linear polarized waves is parallel to dipole resonance rods in the I-shaped structure, the linear polarized waves are vertically incident, and no transmission output exists; under laser irradiation, vanadium dioxide is in a metal state, the dipole resonance rods are completely communicated, the polarization direction of linear polarized waves is parallel to the dipole resonance rods in the I-shaped structure, the linear polarized waves are vertically incident, and wave beams are parallelly output. And then, arranging the amplitude modulation unit structures in an array mode, completely depositing a component unit modulation structure layer on a substrate made of flexible materials such as mica or Polydimethylsiloxane (PDMS) and the like to form the terahertz amplitude modulator, realizing the stability of a modulation function in any bending radian based on the flexibility of the substrate, and further realizing the wavefront control of terahertz wave beams under any bending surface. Under non-laser irradiation, the terahertz wave is intercepted; under the irradiation of laser, the terahertz wave beam is stably output; finally, the amplitude dynamic regulation and control of any curved surface are realized, and the stability of the dynamic regulation and control of the curved surface is ensured.
Compared with the prior art, the terahertz amplitude modulator based on the flexible metamaterial has the advantages of simple structure, realization of amplitude regulation and control on a curved surface with any curvature, good modulation effect and strong stability. The whole device is of a two-dimensional plane structure, can be realized through a micro-machining process, is mature in process and easy to manufacture, and avoids high-difficulty machining brought by the design of a complex three-dimensional structure.
Drawings
FIG. 1-1 is a schematic diagram of a two-dimensional structure of a terahertz amplitude modulator based on a flexible metamaterial according to an embodiment;
1-2 embodiment terahertz amplitude modulator material labeling diagram based on flexible metamaterial;
FIGS. 1-3 are diagrams of the sizes of vanadium dioxide and metal structures of the structure of the amplitude modulation unit in the examples;
FIG. 2 is a graph comparing the modulation effect of the amplitude modulation unit structure and the array structure in vibration according to the embodiment;
FIG. 3-1 is a schematic diagram of a curved surface curvature of an embodiment modulator;
FIG. 3-2 is a graph comparing the modulation effect of a plurality of curved surfaces according to the embodiment;
FIG. 4 is a graph of maximum modulation effect of curvature bending according to the embodiment.
Detailed Description
The present invention will be described in further detail below with reference to embodiments and the accompanying drawings.
The invention provides a terahertz amplitude modulator based on a flexible metamaterial. The unit modulation structure layer is used as an array structure and is formed by sequentially arranging m amplitude modulation unit structures in a copy translation mode, wherein m is more than or equal to 1, and the following points are noted: the openings and orientations of the amplitude modulation unit structures in the arrangement are the same, and the amplitude modulation unit structures are spaced apart from each other, preferably at equal intervals. The distance between the amplitude modulation unit structures is kept to adapt to a light source in an actual experiment, and the working frequency point deviation caused by close-range coupling among the amplitude modulation unit structures is reduced; the distance between the amplitude unit modulation structures is adjustable, and the amplitude unit modulation structures are used for influencing working frequency points due to coupling, and the adjustment of the distance is carried out according to the deviation of the working frequency points of the unit modulation structure layers.
The amplitude modulation unit structure is used as an electromagnetic resonance structure and comprises a metal structure and vanadium dioxide, wherein the metal structure is an I-shaped metal structure consisting of 2 transverse rods and 1 vertical rod; the vertical rod is a dipole resonance rod with an opening in the middle, the vertical rod is divided into an upper vertical rod and a lower vertical rod through the opening, and the end parts of the two ends, close to each other, of the upper vertical rod and the lower vertical rod are connected with metal branch sections. The vanadium dioxide is filled in the opening and completely covers the opening so as to communicate the upper vertical rod with the lower vertical rod. Because the opening is bigger, the upper and lower vertical rods as the dipole resonance rod are shorter, the period of electronic oscillation in the dipole resonance rod is reduced, and the oscillation frequency is increased, so that the resonance frequency point of the amplitude modulation unit structure can be adjusted by adjusting the size of the opening, and the resonance frequency point of the amplitude modulation unit structure is far away from the working frequency point.
In the electromagnetic simulation software, the process of simulating the structure of the amplitude modulation unit is as follows:
step 1: firstly, a complete I-shaped metal structure is manufactured, the I-shaped metal structure is provided with 2 cross rods and 1 vertical rod, and the vertical rod is used as a dipole resonance rod and has the function of adjusting electromagnetic wave response. The length of the cross rod is L, the length of the dipole resonance rod is H, and the widths of the cross rod, the vertical rod and the metal branch are W. Then the length L, H and width W of 2 cross bars and dipole resonant bars in the I-shaped metal structure are adjusted to ensure that S is21The resonance frequency point of the parameter is at the working frequency point. Within the sub-wavelength size range, resonance frequency points can be obtained through adjustment of the parameter H, L, w.
Step 2: because the I-shaped structure is obtained according to the step 1, an opening is interrupted in the vertical rod serving as the dipole resonance rod in the I-shaped structure; this opening falls into montant and lower montant with the montant, the one end tip that goes up montant and lower montant and be close to each other all is connected with the metal branch knot, and the metal branch knot can be when dipole resonance pole disconnection, and the resonance frequency point of amplitude modulation unit structure when the intercommunication is kept away from to a certain extent to the resonance frequency point of amplitude modulation unit structure. Regulating switchThe size of the mouth, the length of the metal branch and the line width make S21The resonance frequency point of the parameter is far away from the working frequency point;
and step 3: adding a vanadium dioxide material block at the opening to completely cover the I-shaped opening. The structural size of the amplitude modulation unit is finely adjusted to change the conductivity of the vanadium dioxide to reach S in the step 1 and the step 221And (6) parameter finishing the manufacture of the amplitude unit modulation structure.
Examples
According to the above, according to the resonance principle, a two-dimensional super-surface is designed by selecting the period P of 240um for the frequency point of 0.2 THz. As shown in fig. 1-1, mica is selected to be made into a substrate, and a unit modulation structure layer is deposited on the substrate, wherein the unit modulation structure layer is an array structure formed by hundreds of amplitude modulation unit structure matrixes, and the array structure is completely deposited on the substrate. Fig. 1-2 is a material structure diagram, and as shown in fig. 1-2, the amplitude modulation unit structure has a thickness of 0.3um and is deposited on a mica substrate with a thickness of 20 um; the specific structure of the amplitude modulation unit structure is shown in fig. 1-3, and comprises a metal structure and vanadium dioxide, wherein the metal structure is an I-shaped structure consisting of 2 cross rods with the length of 150um and 1 vertical rod with the length of 220um, and the vertical rod is used as a dipole resonance rod and has the function of adjusting electromagnetic wave response. The utility model discloses a metal branch knot of length 40um is connected with the montant, be equipped with a 50um opening in the middle of the montant, this opening divide into montant and lower montant, and the one end tip that goes up the montant and be close to each other with lower montant all is connected with the metal branch knot of length 40 um. The width of horizontal pole, montant and metal branch and knot is 4um, can select to be metal material such as gold, aluminium, copper or silver, preferably uses gold in this embodiment.
The terahertz amplitude modulator based on the flexible metamaterial provided by the embodiment is simulated by using an electromagnetic simulation software CST, and the incident result is obtained by adopting linear polarized waves parallel to the direction of the I-shaped dipole resonant rod, wherein the amplitude modulation unit structure is under non-laser irradiation, the vanadium dioxide is in a medium state, the transmission curve cell-off (dotted line) is higher than-1 dB at the frequency point 0.2THz, the transmission curve cell-on (solid line) is lower than-30 dB at the frequency point 0.2THz, the unit modulation structure layer is under non-laser irradiation, the vanadium dioxide is in a medium state, the transmission curve array-on (dotted line) is higher than-1 dB at the frequency point 0.2THz, the unit modulation structure layer is under laser irradiation, the transmission curve array-on (dotted line) is lower than-0.2 THz, and the array modulation function is stable and can be ensured.
In the CST simulation, as shown in fig. 3-1, the array structure is curved in a radian with the axis of symmetry in the polarization direction as the center of curvature. The radian is bent by taking the point o as a tangent point of an arc, the center of the arc is on the axis z, and the radius of the arc is n x lambda. And n is defined as a bending parameter. Simulations were performed for different values of n. As shown in fig. 3-2, in the curved array structure, under non-laser irradiation, vanadium dioxide is in a dielectric state, and the transmittance of the curved array structure is higher than-1.5 dB at the frequency point of 0.2THz, where n is 6-off (dotted line). Under laser irradiation, the transmittance of the transmission curve n is 6-on (solid line) at a frequency point of 0.2THz and is lower than-30 dB. As shown in fig. 4, when n is 3,2, the modulation efficiency is still stable. And when n is 1, the arc angle of the curved surface reaches 180 degrees, and the modulation effect can still be realized. Therefore, when the bending degree of the terahertz amplitude modulator based on the flexible metamaterial reaches the maximum bending state, the modulation effect is still stable.
In addition, the terahertz amplitude modulator based on the flexible metamaterial provided by the invention is used as an amplitude modulation unit structure of an electromagnetic resonance structure, and the adjustment of the working frequency point is realized by adjusting the structural size of the amplitude modulation unit under the condition of keeping the unit structure unchanged.
The above-described embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Numerous other specific variations and combinations can be devised by those skilled in the art in light of the disclosure without departing from the spirit of the invention and the scope of the invention will be limited only by the claims that follow.
Claims (5)
1. A terahertz amplitude modulator based on a flexible metamaterial comprises a flexible substrate and a unit modulation structure layer completely deposited on the flexible substrate, and is characterized in that:
the unit modulation structure layer is used as an array structure and is formed by sequentially arranging m amplitude modulation unit structures in a copying translation mode, wherein m is larger than or equal to 1, a space is reserved between the amplitude unit structures in the arrangement, and the space is larger than 0;
the amplitude modulation unit structure is used as an electromagnetic resonance structure and comprises a metal structure and vanadium dioxide; the metal structure is an I-shaped structure consisting of 2 transverse rods and 1 vertical rod, the vertical rod is a dipole resonance rod with an opening in the middle, the opening divides the vertical rod into an upper vertical rod and a lower vertical rod, and the end parts of the two adjacent ends of the upper vertical rod and the lower vertical rod are connected with metal branch knots; the vanadium dioxide is filled in the opening and completely covers the opening so as to communicate the upper vertical rod with the lower vertical rod.
2. The terahertz amplitude modulator based on the flexible metamaterial according to claim 1, wherein: the m amplitude unit modulation structures are arranged in a matrix.
3. The terahertz amplitude modulator based on the flexible metamaterial according to claim 2, wherein: the size of the opening and the length and width of the metal branch can be adjusted, and the terahertz amplitude modulator can be used as a frequency point tuning component of a terahertz amplitude modulator.
4. The terahertz amplitude modulator based on the flexible metamaterial according to claim 1, wherein: the flexible substrate is mica or Polydimethylsiloxane (PDMS).
5. The terahertz amplitude modulator based on the flexible metamaterial according to any one of claims 1 to 4, wherein: the metal structure is made of gold, aluminum, copper or silver.
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| CN113285232A (en) * | 2021-05-18 | 2021-08-20 | 天津大学 | Convertible external chiral terahertz metamaterial unit and device based on vanadium dioxide |
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