CN111366253B - Method for obtaining non-uniformity correction coefficient of infrared photoelectric system and correction method - Google Patents
Method for obtaining non-uniformity correction coefficient of infrared photoelectric system and correction method Download PDFInfo
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Abstract
The invention discloses a method for acquiring a non-uniformity correction coefficient of an infrared photoelectric system and a correction method. The method comprises the following steps: s1, when the temperature of the infrared photoelectric system is stabilized at a first temperature, acquiring images of a black body radiation source and a self-contained radiation source of the infrared photoelectric system respectively, correcting two points, and calculating two-point correction coefficients of each pixel; s2, placing the self-contained radiation source in the middle of an optical path of an optical system of the infrared photoelectric system to collect images, performing single-point correction, and calculating a single-point correction coefficient of each pixel; and S3, correcting according to the correction coefficient and outputting the corrected response value. The method for obtaining the correction coefficient to carry out the non-uniformity correction can solve the problem that the non-uniformity is introduced by single-point correction when the radiation sources of two-point correction and single-point correction are positioned at different positions of the optical path of the system, thereby enlarging the correction dynamic range and improving the non-uniformity of the focal plane of the infrared photoelectric system.
Description
Technical Field
The invention relates to the technical field of infrared detection, in particular to a method for acquiring a non-uniformity correction coefficient of an infrared photoelectric system and a correction method.
Background
In recent years, infrared imaging technology has rapidly developed in military and commercial fields, wherein the development of infrared focal plane technology has not been successful. But limited by the detector material and process level, the infrared focal plane also has its obvious weakness-non-uniformity problem. Due to the problem, the detection performance of the infrared imaging system is limited, so that the infrared nonuniformity correction becomes a key technology.
The reason for generating the non-uniformity of the infrared focal plane is complicated, and for the whole machine system, the main sources of the non-uniformity on the infrared focal plane include the following: the non-uniformity of response characteristics caused by randomness in the manufacturing process of each array element, the non-uniformity of energy distribution of each field of view of the infrared optical system on a focal plane, the non-uniformity of radiation variation of the system caused by temperature drift of the whole system on the focal plane and the like. Due to the complex non-uniformity of the infrared focal plane, the difficulty of correcting the non-uniformity is increased.
The non-uniformity correction technology commonly used in engineering is mostly a correction method based on temperature points, and non-uniformity correction is realized by counting the response of pixels at specific temperature points and calculating the response parameters of the pixels according to a correction model. The method mainly comprises single-point correction, two-point correction and a method combining the two-point correction and the single-point correction. The traditional method combining two-point correction and single-point correction comprises the steps of firstly, placing a radiation source at the front end of a system to perform two-point correction, and calculating the offset and gain of a pixel; secondly, before working imaging, single-point correction is carried out by using a radiation source at the front end of the system or a radiation source in the middle of an optical path, and offset is corrected. However, when the two-point calibration radiation source is positioned in a different beam path than the single-point calibration radiation source, the single-point calibration of the local beam path introduces non-uniformity in the infrared focal plane. Particularly, when the correction method is applied to the whole infrared photoelectric system, the non-uniformity difference caused by the local optical path and the whole optical path on the focal plane can change along with the environmental temperature and the self temperature drift, and at the moment, the non-uniformity on the focal plane can not be eliminated by combining the traditional two-point correction with the single-point correction, so that the correction effect is poor, and the correction precision is low.
Disclosure of Invention
The embodiment of the invention provides a non-uniformity correction coefficient obtaining method and a correction method of an infrared photoelectric system, aiming at the problems that when a two-point correction radiation source and a single-point correction radiation source are positioned at different positions of the infrared photoelectric system, the whole non-uniformity correction effect of the infrared photoelectric system is poor, and the precision is low.
The first aspect of the embodiments of the present invention provides a method for obtaining a non-uniformity correction coefficient of an infrared optoelectronic system, where the method includes the following steps:
s1, when the temperature of the infrared photoelectric system is stabilized at a first temperature, acquiring images of a black body radiation source and a self-contained radiation source of the infrared photoelectric system respectively, correcting two points, and calculating two-point correction coefficients of each pixel;
s2, placing the self-contained radiation source in the middle of the optical path of the optical system of the infrared photoelectric system to collect images, performing single-point correction, and calculating the single-point correction coefficient of each pixel.
With reference to the first aspect, the two-point correction coefficient and the single-point correction coefficient are calculated by the FPGA.
With reference to the first aspect, the self-contained radiation source is a radiation source that can be controlled to switch in or out of an optical system.
With reference to the first aspect as an embodiment, the radiation source that can be controlled to cut into or out of the optical system is a mechanical shutter.
With reference to the first aspect, step S1 includes:
s11, powering up the infrared photoelectric system to stabilize the temperature at a first temperature;
s12, placing a black body radiation source at the front end of the optical system, collecting the image of the black body radiation source when the temperature of the black body radiation source is stabilized at a second temperature, and obtaining an actual response value V by each pixeli(TL)；
S13, placing the self-contained radiation source of the infrared photoelectric system in the middle of the optical path of the optical system, collecting the image of the self-contained radiation source, and obtaining the actual response value V by each pixeli(TH)；
S14, utilizing the actual response value V corresponding to the blackbody radiation source imagei(TL) Actual response value V corresponding to the self-contained radiation source imagei(TH) Calculating two-point correction coefficient gain k of each pixeliAnd bias bi。
With reference to the first aspect, the two-point corrected response value V of each pixeli' (T) is the gain kiMultiplied by the actual response value Vi(T) plus the bias bi。
In combination with the embodiment of the first aspect,
in the formula (I), the compound is shown in the specification,
is the average value of the actual response values of all pixels when the infrared photoelectric system images the blackbody radiation source,
is the average value V of the actual response value of each pixel when the infrared photoelectric system images the self-contained radiation sourcei(TL) Is the actual response value, V, of each pixel element to the blackbody radiation sourcei(TH) Is the actual response value of each pixel to the self-contained radiation source.
With reference to the first aspect, step S2 includes:
s21, the self-contained radiation source is placed in the middle of the optical path of the optical system, the image of the radiation source is collected, and each pixel obtains an actual response value Vi(Tshutter)；
S22, wherein the single-point correction coefficient of each pixel is b'iThe calculation formula is as follows:
in the formula (I), the compound is shown in the specification,
is the average actual response value, V, of each pixel element to the self-contained radiation sourcei' (T) is the response value after two-point correction for each picture element.
A second aspect of the embodiments of the present invention provides a non-uniformity correction method for an infrared photovoltaic system, wherein two-point correction coefficients and a single-point correction coefficient are obtained according to the non-uniformity correction coefficient obtaining method for an infrared photovoltaic system, and then an actual response value V for each pixel is obtainedi(T) using the two-point correction coefficient and the one-point correction coefficientCorrecting and outputting the corrected response value V of each pixeli″(T)。
With reference to the second embodiment, the corrected response value V is obtained according to the following formulai″(T)
Vi″(T)＝Vi′(T)+b′i
In the formula, Vi' (T) is the response value after two-point correction of each pixel, Vi' (T) is equal to the gain kiMultiplied by the actual response value Vi(T) plus an offset bi，b′iIs a single point correction coefficient, k, of each pixel elementi、biIs a two-point correction coefficient.
The invention has the beneficial effects that: by adopting the method provided by the invention, the middle and the front end of the optical path are respectively selected from the reference source positions of high and low temperature points during two-point correction, the non-uniformity of the whole system imaging is considered, and the non-uniformity introduced by the reference source positioned in the middle of the optical path during single-point correction is also considered, so that the correction effect is improved, and the correction precision is improved; meanwhile, the reference source in the middle of the optical path is used as a high-temperature point acquisition image in two-point correction, temperature drift of the equipment after long-time work is considered, and heterogeneity introduced in single-point correction after the reference source temperature drift is considered. The method provided by the invention can obtain a better correction effect and is beneficial to practical engineering application.
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In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts. Wherein:
fig. 1 is a flowchart of a non-uniformity correction method for an infrared optoelectronic system according to an embodiment of the present invention.
FIG. 2 is a schematic diagram of an optical path for obtaining a correction coefficient according to the present invention.
Wherein, 1 is a uniform blackbody radiation source at the front end of the system; 2, an imaging light path of the infrared photoelectric system; 3 is a reference source in the middle of the optical path of the system, in this case a radiation source of the system itself that can control the cut-in or cut-out of the optical path (fig. 2 is the state of cut-in of the optical path); and 4, an infrared focal plane assembly.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Fig. 1 is a flowchart of a non-uniformity correction method for an infrared optoelectronic system according to an embodiment of the present invention.
Fig. 2 is a schematic diagram of an optical path for acquiring a correction coefficient according to an embodiment of the present invention. Wherein: 1 is a uniform blackbody radiation source at the front end of the system; 2, an imaging light path of the infrared photoelectric system; 3 is a reference source in the middle of the optical path of the system, in this case a radiation source of the system itself that can control the cut-in or cut-out of the optical path (fig. 2 is the state of cut-in of the optical path); and 4, an infrared focal plane assembly. The optical system comprises a combination of mirrors and lenses or a combination of pure lenses for imaging the target radiation source. The infrared focal plane array is used for converting the optical signal imaged by the optical system into an electric signal for the processor to perform operation processing. The mechanical barrier is a self-contained radiation source of the infrared optoelectronic system according to the embodiment of the present invention, and of course, the self-contained radiation source may be other elements or devices, and the mechanical barrier is fixed or matched by the moving device and the rotating device, and is used for cutting the mechanical barrier into or out of the optical system. The self-contained radiation source is thus a radiation source that can be controlled to cut into or out of the optical system, or the radiation source that can be controlled to cut into or out of the optical system is a mechanical shutter.
Referring to fig. 1, a non-uniformity correction method of an infrared optoelectronic system according to an embodiment of the present invention includes the following steps:
s1, calculating two-point correction coefficients of each pixel;
s2, calculating a single point correction coefficient of each pixel;
and S3, correcting according to the correction coefficient and outputting the corrected response value.
Step S1 and step S2 in the embodiment of the present invention are also referred to as a method for obtaining a non-uniformity correction coefficient of an infrared optoelectronic system. The above steps are explained in detail below:
and S1, calculating two-point correction coefficients of each pixel.
When the temperature of the infrared photoelectric system is stabilized at a first temperature, images are respectively collected for a black body radiation source and a self-contained radiation source of the infrared photoelectric system, two-point correction is carried out, and two-point correction coefficients of each pixel are calculated.
The method specifically comprises the following steps:
and S11, powering on the infrared photoelectric system to stabilize the temperature at the first temperature.
At the beginning of the calibration, the infrared photoelectric system needs to be powered up, the temperature of the infrared photoelectric system gradually rises, and the temperature of the infrared photoelectric system is stabilized at the first temperature to reach thermal equilibrium. And judging whether the mechanical blocking piece is positioned in the middle of the optical system, if so, moving out the mechanical blocking piece to finish the correction preparation, and if not, finishing the correction preparation.
S12, placing a black body radiation source at the front end of the optical system, collecting the image of the black body radiation source when the temperature of the black body radiation source is stabilized at a second temperature, and obtaining an actual response value V by each pixeli(TL)。
The present embodiment preferably places the blackbody radiator at the front end of the optical system, independent of the infrared optoelectronic system, so that the radiation of the blackbody radiator fills the entire field of view. When the blackbody radiation source is arranged at the front end of the optical system, the temperature of the blackbody radiation source can be stabilized at the second temperature TL(ii) a Or the temperature of the blackbody radiation source can be higher when the blackbody radiation source is placed, and then the temperature of the blackbody radiation source is reduced until the blackbody radiation source is stabilized at the second temperature TL. The actual response value output by the imaging element when imaging the radiation source with the temperature T is V (T). The infrared focal plane array has N pixels, and the actual response value of the ith pixel is recorded as Vi(TL). Therefore, the second temperature TLThe actual response value of each pixel is Vi(TL) I is an integer of 1 to N. At the moment, the average actual response value of each pixel element to the blackbody radiation source
Comprises the following steps:
s13, cutting a self-contained radiation source of the infrared photoelectric system into the middle of the optical path of the optical system, collecting the image of the self-contained radiation source, and obtaining a response value V by each pixeli(TH)。
And cutting a self-contained radiation source (a mechanical baffle) of the infrared photoelectric system into the middle of the optical system, and imaging the infrared photoelectric system to finish two-point correction. Because the correction method of the embodiment of the invention respectively selects the middle part and the front end of the optical path at the positions of the reference sources (the mechanical baffle and the blackbody radiation source) of the high and low temperature points during the two-point correction, the non-uniformity of the imaging of the whole system is considered, and the non-uniformity introduced by the reference source positioned in the middle of the optical path during the single-point correction is also considered. Meanwhile, the reference source in the middle of the optical path is used as a high-temperature point acquisition image in two-point correction, temperature drift of the equipment after long-time work is considered, and heterogeneity introduced in single-point correction after the reference source temperature drift is considered. The optimization method of the embodiment of the invention can obtain better correction effect and is beneficial to practical engineering application.
Recording the actual response value V of each pixel element when the infrared focal plane images the high-temperature reference source (mechanical baffle plate)i(TH) Then, the average actual response value of each pixel element to the high-temperature reference source (mechanical baffle) is as follows:
s14, utilizing the image of the black body radiation source and the self-contained radiationCalculating two-point correction coefficient of each pixel according to the image of the source, wherein the two-point correction coefficient refers to the gain k of each pixeliAnd bias bi. Gain kiAnd bias biThe following method is adopted for calculation:
calculating two-point correction coefficient bias b of each pixel according to the two-point correction modeliAnd a gain kiAnd completing two-point correction, wherein:
therefore:
in the formula (I), the compound is shown in the specification,
is the average value of the actual response values of all pixels when the infrared photoelectric system images the blackbody radiation source,
is the average value V of the actual response value of each pixel when the infrared photoelectric system images the self-contained radiation sourcei(TL) Is the actual response value, V, of each pixel element to the blackbody radiation sourcei(TH) Is the actual response value of each pixel to the self-contained radiation source.
When the infrared focal plane array receives a radiation source with the temperature of T, the actual response value of each pixel element is Vi(T), after two-point correction, the response value V of each pixel after two-point correctioni′(T)：
Vi′(T)＝ki×Vi(T)+bi
Namely the response value after two-point correction of each pixel is the gain kiMultiplying the actual response value by the offset bi。
After the two-point correction, the offset corresponding to each pixel still needs to be corrected by using the one-point correction, that is, step S2 needs to be executed.
And S2, calculating a single-point correction coefficient of each pixel.
And placing the self-contained radiation source (namely a mechanical baffle plate) in the middle of the optical path of the optical system (for example, between the first imaging lens group and the second imaging lens group), performing single-point correction, and calculating a single-point correction coefficient of each pixel.
The method specifically comprises the following steps:
s21, the self-contained radiation source is placed in the middle of the optical path of the optical system, the image of the radiation source is collected, and each pixel obtains an actual response value Vi(Tshutter) (ii) a The average actual response value of each pixel to the self-contained radiation source is as follows:
s22, wherein the single-point correction coefficient of each pixel is b'iThe calculation formula is as follows:
in the formula (I), the compound is shown in the specification,
is the average actual response value, V, of each pixel element to the self-contained radiation sourcei′(Tshutter) Is the response value after two-point correction of each pixel.
Vi′(Tshutter)＝ki×Vi(Tshutter)+bi
And S3, correcting according to the correction coefficient and outputting the corrected response value.
And then correcting the actual response value of each pixel by adopting the two-point correction coefficient and the single-point correction coefficient, and outputting the corrected response value. Specifically, the corrected response value V of each pixel is obtained according to the following formulai″(T)。
Vi″(T)＝Vi′(T)+b′i
In the formula, Vi' (T) is the response value after two-point correction of each pixel, Vi' (T) is equal to the gain kiMultiplied by the actual response value Vi(T) plus an offset bi，b′iIs a single point correction coefficient for each pixel.
All the calculations in the correction method of the embodiment of the present invention are handled by an FPGA (Field-Programmable Gate Array), and have the advantages of simplicity and easy control.
The technical scheme of completing the non-uniformity correction by matching two-point correction with one-point correction in the prior art cannot solve the problem of non-uniformity introduced by correction when a two-point correction radiation source and a single-point correction radiation source are positioned at different positions of an infrared optical system. The correction method provided by the embodiment of the invention can solve the problem of non-uniformity caused on an infrared focal plane by combining the traditional two-point correction with the single-point correction when the temperature drift of the equipment and the single-point correction radiation source are in the middle of the optical path, improves the effect of the non-uniformity correction and improves the correction precision. After the infrared photoelectric system is corrected by the correction method provided by the embodiment of the invention, the image non-uniformity is good.
Specifically, compared with the conventional method, the non-uniformity correction method for the infrared photoelectric system in the embodiment of the present invention has the following advantages:
1. whether the infrared optical system has temperature drift or not does not need to be judged, and the non-uniformity caused by the temperature drift of the equipment can be solved by adopting a fixed two-point correction and single-point correction mode, so that the correction process is simplified. 2. A radiation source is arranged in the infrared photoelectric system, and the radiation source is used as a high-temperature point radiation source for two-point correction and a radiation source for single-point correction. The problem of non-uniformity caused by correction when a two-point correction radiation source and a single-point correction radiation source are positioned at different positions of an infrared optical system is solved.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes performed by the present specification and drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (7)
1. The method for acquiring the nonuniformity correction coefficient of the infrared photoelectric system is characterized by comprising the following steps of:
s1, when the temperature of the infrared photoelectric system is stabilized at a first temperature, acquiring images of a black body radiation source and a self-contained radiation source of the infrared photoelectric system respectively, correcting two points, and calculating two-point correction coefficients of each pixel;
s2, placing the self-contained radiation source in the middle of an optical path of an optical system of the infrared photoelectric system to collect images, performing single-point correction, and calculating a single-point correction coefficient of each pixel;
step S1 includes:
s11, powering up the infrared photoelectric system to stabilize the temperature of the photoelectric system at a first temperature;
s12, placing a black body radiation source at the front end of the optical system, collecting the image of the black body radiation source when the temperature of the black body radiation source is stabilized at a second temperature, and obtaining an actual response value V by each pixeli(TL)；
S13, cutting a self-contained radiation source of the infrared photoelectric system into the middle of a light path of the optical system, collecting an image of the self-contained radiation source, and obtaining an actual response value V by each pixeli(TH)；
S14, utilizing the actual response value V corresponding to the blackbody radiation source imagei(TL) Actual response value V corresponding to the self-contained radiation source imagei(TH) Calculating two-point correction coefficient gain k of each pixeliAnd bias bi(ii) a Wherein:
response value V after two-point correction of each pixeli' (T) is the gain kiMultiplied by the actual response value Vi(T) plus the bias bi：
Vi′(T)＝ki×Vi(T)+bi。
2. The method for obtaining nonuniformity correction coefficients of an infrared optoelectronic system according to claim 1, wherein said two point correction coefficients and said one point correction coefficient are calculated by an FPGA.
3. The method for obtaining the nonuniformity correction factor in an infrared optoelectronic system according to claim 1, wherein said self-contained radiation source is a radiation source which can be controlled to be switched in or out of an optical system.
4. The method for obtaining the nonuniformity correction factor in an infrared optical system according to claim 3, wherein said radiation source controllable to cut in or out the optical system is a mechanical shutter.
5. The method for obtaining the nonuniformity correction coefficient of infrared optical system according to claim 4, wherein the step S2 comprises:
s21, the self-contained radiation source is placed in the middle of the optical path of the optical system, the image of the radiation source is collected, and each pixel obtains an actual response value Vi(Tshutter)；
S22, wherein the single-point correction coefficient of each pixel is b'iThe calculation formula is as follows:
in the formula (I), the compound is shown in the specification,
is the average actual response value, V, of each pixel element to the self-contained radiation sourcei′(Tshutter) Is the response value after two-point correction of each pixel.
6. A nonuniformity correction method of an infrared photoelectric system, characterized in that the nonuniformity correction coefficient acquisition method of an infrared photoelectric system according to any one of claims 1 to 5 acquires two-point correction coefficients and a single-point correction coefficient, and then an actual response value V for each pixeli(T) correcting by adopting the two-point correction coefficient and the single-point correction coefficient, and outputting the corrected response value V of each pixeli″(T)。
7. The method according to claim 6, wherein the corrected response V of each pixel is obtained according to the following formulai″(T)
Vi″(T)＝Vi′(T)+b′i
In the formula, Vi' (T) is the response value after two-point correction of each pixel, Vi' (T) is equal to the gain kiMultiplied by the actual response value Vi(T) plus an offset bi，b′iIs a single point correction coefficient, k, of each pixel elementi、biIs a two-point correction coefficient.
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