CN111352144A - X-ray ultrafast detection device and method - Google Patents
X-ray ultrafast detection device and method Download PDFInfo
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- CN111352144A CN111352144A CN202010229863.1A CN202010229863A CN111352144A CN 111352144 A CN111352144 A CN 111352144A CN 202010229863 A CN202010229863 A CN 202010229863A CN 111352144 A CN111352144 A CN 111352144A
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Abstract
The invention relates to an X-ray ultrafast detection device and a method, aiming at solving the problems that X-ray ultrafast diagnostic equipment such as a vacuum stripe camera, a vacuum framing camera and the like has large volume, high cost and more complex control; the ultrafast semiconductor diode can not realize the ultrafast detection of X-ray in sub picosecond or femtosecond magnitude. The device comprises a laser, a wavelength conversion mechanism, a time domain amplification mechanism, a photoelectric detector and a reading circuit. The test laser emitted by the laser is transmitted to the wavelength conversion mechanism, the wavelength conversion mechanism transmits time domain information of an X-ray pulse signal to be tested to the test laser, the test laser carrying the time domain information of the X-ray pulse signal is transmitted to the time domain amplification mechanism, the time domain amplification mechanism conducts time domain broadening on the test laser carrying the time domain information of the X-ray pulse signal and outputs the test laser to the photoelectric detector, and the photoelectric detector converts a received optical signal into an electrical signal and displays the electrical signal through the reading circuit.
Description
Technical Field
The invention relates to an X-ray ultrafast detection device and method.
Background
At present, the detection of X-rays at home and abroad, especially the ultra-fast detection of short pulse X-ray signals such as picoseconds and femtoseconds, is generally carried out by adopting ultra-fast diagnostic equipment such as a vacuum stripe camera and a vacuum framing camera. The equipment mainly utilizes the photoelectric cathode to convert an X-ray pulse signal into an electron emission signal, and then the electron emission signal is rapidly scanned, so that the ultra-fast detection of the X-ray pulse signal is realized. The method relates to a vacuum device and space electronic deflection control, so that the whole equipment has larger volume, higher cost and more complex control device.
In addition, the conventional semiconductor X-ray detector is adopted for detection, an ultrafast semiconductor diode is mainly used for detecting an incident X-ray pulse signal, the detection is limited by the time response of the semiconductor detector and the sampling bandwidth of a reading circuit, only X-ray ultrafast detection of dozens of picoseconds can be realized at present, and X-ray ultrafast detection of sub-picoseconds or even femtosecond magnitudes cannot be realized.
Disclosure of Invention
The invention aims to provide an X-ray ultrafast detection device and method, which aim to solve the problems that X-ray ultrafast diagnosis equipment such as a vacuum stripe camera, a vacuum framing camera and the like in the prior art relates to a vacuum device and space electronic deflection control, so that the whole equipment has larger volume, higher cost and more complex control; the ultrafast semiconductor diode is limited by the time response of the semiconductor detector and the sampling bandwidth of the reading circuit, and can not realize the ultrafast detection of X-rays in sub picoseconds or even femtosecond magnitude.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
an X-ray ultrafast detection device is characterized in that:
the device comprises a laser, a wavelength conversion mechanism, a time domain amplification mechanism, a photoelectric detector and a reading circuit;
the test laser emitted by the laser is transmitted to the wavelength conversion mechanism;
the wavelength conversion mechanism transmits the time domain information of the X-ray pulse signal to be tested to the test laser, and then transmits the test laser carrying the time domain information of the X-ray pulse signal to the time domain amplification mechanism;
the time domain amplifying mechanism is used for widening the time domain of the test laser carrying the time domain information of the X-ray pulse signal and outputting the test laser to the photoelectric detector;
the photoelectric detector converts the received optical signal into an electric signal and displays the electric signal through a reading circuit.
Further, the wavelength conversion mechanism is a semiconductor interferometric X-ray wavelength conversion mechanism.
Further, the semiconductor interferometric X-ray wavelength conversion mechanism comprises a coupling lens and a semiconductor wavelength conversion chip;
one side of the semiconductor wavelength conversion chip is plated with a semi-transparent semi-reflective film, and the other side of the semiconductor wavelength conversion chip is plated with a total-reflective film;
after passing through the coupling lens, the test laser is emitted from one side of the semiconductor wavelength conversion chip plated with the semi-transparent and semi-reflective film, and an X-ray pulse signal to be tested is emitted from one side of the semiconductor wavelength conversion chip plated with the fully-reflective film;
the semiconductor wavelength conversion chip transmits time domain information of an X-ray pulse signal to be tested to the test laser, and then the test laser carrying the time domain information of the X-ray pulse signal is output through the coupling lens.
Further, the test laser emitted by the laser is transmitted to the wavelength conversion mechanism through a multiplexing type optical fiber optical path;
and the test laser which is output by the wavelength conversion mechanism and carries the time domain information of the X-ray pulse signal is transmitted to the time domain amplification mechanism through the multiplexing type optical fiber optical path.
Furthermore, the time domain amplifying mechanism comprises a first polarization controller, a first dispersion controller, a pump laser, a second polarization controller, a second dispersion controller, a beam combiner, a four-wave mixer, a filter and a third dispersion controller;
the test laser carrying the time domain information of the X-ray pulse signal enters a beam combiner through a first polarization controller and a first dispersion controller;
the pump laser emitted by the pump laser enters the beam combiner through the second polarization controller and the second dispersion controller;
and the mixed light output by the beam combiner is output after passing through the four-wave mixer, the filter and the third dispersive controller in sequence.
Furthermore, the wavelength of the test laser emitted by the laser is larger than the wavelength of the X-ray pulse signal to be tested.
An X-ray ultrafast detection method is characterized by comprising the following steps:
1) transmitting test laser emitted by a laser to a wavelength conversion mechanism, and simultaneously emitting an X-ray pulse signal to be tested into the wavelength conversion mechanism;
2) transmitting the time domain information of the X-ray pulse signal to be tested to the test laser through the wavelength conversion mechanism to obtain the test laser carrying the time domain information of the X-ray pulse signal;
3) transmitting the test laser carrying the time domain information of the X-ray pulse signal obtained in the step 2) to a time domain amplifying mechanism, and performing time domain broadening and outputting on the test laser through the time domain amplifying mechanism;
4) converting the optical signal output by the time domain amplifying mechanism in the step 3) into an electric signal by using a photoelectric detector and outputting the electric signal;
5) and (3) detecting and displaying the electric signals output by the photoelectric detector in the step 4) by using a reading circuit.
Compared with the prior art, the invention has the beneficial effects that:
(1) the X-ray ultrafast detection device provided by the invention adopts an all-solid-state structure, realizes ultrahigh time resolution detection of an X-ray pulse signal to be detected, avoids using a vacuum system, improves the reliability of the device, and has simple structure and lower cost;
(2) the X-ray ultrafast detection method provided by the invention transfers the time domain information of the X-ray pulse signal to be detected to the measuring laser by utilizing the semiconductor photorefractive effect, realizes the wavelength conversion of the X-ray pulse signal to be detected, realizes the time domain broadening of the measuring laser carrying the time domain information of the X-ray pulse signal based on the time lens and the dispersion Fourier transform, and reads out the signal by utilizing the photoelectric detector and the reading circuit, thereby realizing the ultrafast detection of X-rays with the sub-picosecond and femtosecond magnitude.
Drawings
FIG. 1 is a schematic structural diagram of an embodiment of an ultra-fast X-ray detection device according to the present invention;
FIG. 2 is a schematic diagram of a wavelength conversion mechanism in an embodiment of the invention;
fig. 3 is a schematic structural diagram of a time domain amplification mechanism in an embodiment of the present invention.
In the figure, 1-laser, 2-wavelength conversion mechanism, 21-coupling lens, 22-semiconductor wavelength conversion chip, 23-semi-transparent and semi-reflective film, 24-total reflection film, 3-time domain amplification mechanism, 31-first polarization controller, 32-first dispersion controller, 33-pump laser, 34-second polarization controller, 35-second dispersion controller, 36-beam combiner, 37-four-wave mixer, 38-filter, 39-third dispersion controller, 4-photodetector, 5-readout circuit, 6-multiplexing type optical fiber path.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
The invention provides an X-ray ultrafast detection device, as shown in figure 1, comprising a laser 1, a wavelength conversion mechanism 2, a time domain amplification mechanism 3, a photoelectric detector 4 and a reading circuit 5.
The test laser emitted by the laser 1 is transmitted to the wavelength conversion mechanism 2; the wavelength conversion mechanism 2 transmits the time domain information of the X-ray pulse signal to be tested to the test laser, and then transmits the test laser carrying the time domain information of the X-ray pulse signal to the time domain amplification mechanism 3; the time domain amplifying mechanism 3 performs time domain broadening on the test laser carrying the time domain information of the X-ray pulse signal and outputs the test laser to the photoelectric detector 4; the photodetector 4 converts the received optical signal into an electrical signal and displays it by the readout circuit 5.
In order to facilitate signal processing, the wavelength of the test laser emitted by the laser 1 is larger than the wavelength of the X-ray pulse signal to be tested, and a visible laser or a near-infrared laser is generally selected.
As shown in fig. 2, the wavelength conversion mechanism 2 is a semiconductor interferometric X-ray wavelength conversion mechanism, and includes a coupling lens 21 and a semiconductor wavelength conversion chip 22, wherein the semiconductor wavelength conversion chip 22 is coated with a transflective film 23 on one side and a total reflection film 24 on the other side, so as to form a fabry-perot (F-P) cavity. The test laser beam passes through the coupling lens 21 and becomes parallel light, and enters from the side of the semiconductor wavelength conversion chip 22 coated with the semi-transparent and semi-reflective film 23, and the X-ray pulse signal to be tested enters from the side of the semiconductor wavelength conversion chip 22 coated with the total reflective film 24. The semiconductor wavelength conversion chip 22 absorbs X-ray light and generates transient photon-generated carriers, so that the refractive index inside the material changes, thereby generating transient phase modulation on the incident test laser to form a transient pulse M, which carries time domain information of an X-ray pulse signal. And detecting the time domain of the pulse M, namely reversely deducing the time domain information of the X-ray pulse signal to be detected. The pulse M is likewise output via the coupling lens 21.
Based on the special working principle of the wavelength conversion mechanism 2 and the purpose of simplifying the optical path design, the laser 1, the wavelength conversion mechanism 2 and the time domain amplification mechanism 3 are connected through a multiplexing type optical fiber optical path 6. The multiplexing type optical fiber light path 6 mainly comprises an optical fiber circulator and a coupling component, test laser emitted by the laser 1 is transmitted to the wavelength conversion mechanism 2 through the multiplexing type optical fiber light path 6, and the test laser which is output by the wavelength conversion mechanism 2 and carries time domain information of the X-ray pulse signal is transmitted to the time domain amplification mechanism 3 through the multiplexing type optical fiber light path 6.
As shown in fig. 3, the time domain amplification mechanism 3 includes a first polarization controller 31, a first dispersion controller 32, a pump laser 33, a second polarization controller 34, a second dispersion controller 35, a beam combiner 36, a four-wave mixer 37, a filter 38, and a third dispersion controller 39.
The test laser carrying the time domain information of the X-ray pulse signal, which is transmitted from the multiplexing type optical fiber optical path 6, enters the beam combiner 36 through the first polarization controller 31 and the first dispersion controller 32; the pump laser light emitted by the pump laser 33 enters the beam combiner 36 through the second polarization controller 34 and the second dispersion controller 35; the mixed light output by the beam combiner 36 passes through the four-wave mixer 37, the filter 38 and the third dispersion controller 39 in sequence and is output, so that high-fidelity high-magnification time domain broadening of optical signals is realized.
The photoelectric detector 4 is a semiconductor ultrafast photoelectric detector, and the detection wave band of the semiconductor ultrafast photoelectric detector needs to cover the test laser wave band.
The X-ray ultrafast detection method based on the device comprises the following steps:
1) transmitting test laser emitted by a laser 1 to a wavelength conversion mechanism 2 through a multiplexing type optical fiber light path 6, and simultaneously emitting an X-ray pulse signal to be tested into the wavelength conversion mechanism 2, wherein in the embodiment, the X-ray pulse signal to be tested is a subpicosecond signal;
2) transmitting the time domain information of the X-ray pulse signal to be tested to the test laser through the wavelength conversion mechanism 2 to obtain the test laser carrying the time domain information of the X-ray pulse signal;
3) transmitting the test laser carrying the time domain information of the X-ray pulse signal obtained in the step 2) to a time domain amplification mechanism 3 again through a multiplexing type optical fiber optical path 6, wherein the amplification factor of the time domain amplification mechanism 3 can be adjusted by changing the parameter of a dispersion device, and generally 100 times or less is adopted to ensure that no dispersion distortion occurs; when the requirement on the waveform details is not high, the design can also be more than 100 times. The amplification factor of the time domain amplification mechanism 3 is designed to be 100, so that a subpicosecond signal is output after being widened to dozens of picoseconds in high fidelity;
4) converting the optical signal output by the time domain amplifying mechanism 3 in the step 3) into an electric signal by using a photoelectric detector 4 and outputting the electric signal;
5) the electrical signal output by the photodetector 4 in step 4) is detected and displayed using the readout circuit 5.
Claims (7)
1. An X-ray ultrafast detection device, characterized in that:
the device comprises a laser (1), a wavelength conversion mechanism (2), a time domain amplification mechanism (3), a photoelectric detector (4) and a reading circuit (5);
the test laser emitted by the laser (1) is transmitted to the wavelength conversion mechanism (2);
the wavelength conversion mechanism (2) transmits time domain information of an X-ray pulse signal to be tested to the test laser, and then transmits the test laser carrying the time domain information of the X-ray pulse signal to the time domain amplification mechanism (3);
the time domain amplifying mechanism (3) performs time domain broadening on the test laser carrying the time domain information of the X-ray pulse signal and outputs the test laser to the photoelectric detector (4);
the photoelectric detector (4) converts the received optical signal into an electric signal and displays the electric signal through a reading circuit (5).
2. The X-ray ultrafast detection apparatus of claim 1, wherein:
the wavelength conversion mechanism (2) is a semiconductor interference type X-ray wavelength conversion mechanism.
3. The X-ray ultrafast detection apparatus according to claim 2, wherein:
the semiconductor interference type X-ray wavelength conversion mechanism comprises a coupling lens (21) and a semiconductor wavelength conversion chip (22);
one side of the semiconductor wavelength conversion chip (22) is plated with a semi-transparent semi-reflective film (23), and the other side is plated with a total-reflective film (24);
after passing through a coupling lens (21), the test laser is emitted from one side of a semi-transparent and semi-reflective film (23) plated on a semiconductor wavelength conversion chip (22), and an X-ray pulse signal to be tested is emitted from one side of the semiconductor wavelength conversion chip (22) plated with a total-reflective film (24);
the semiconductor wavelength conversion chip (22) transmits time domain information of an X-ray pulse signal to be tested to the test laser, and then the test laser carrying the time domain information of the X-ray pulse signal is output through the coupling lens (21).
4. The X-ray ultrafast detection apparatus according to claim 3, wherein:
the test laser emitted by the laser (1) is transmitted to the wavelength conversion mechanism (2) through the multiplexing type optical fiber light path (6);
and the test laser which is output by the wavelength conversion mechanism (2) and carries the time domain information of the X-ray pulse signal is transmitted to the time domain amplification mechanism (3) through the multiplexing type optical fiber light path (6).
5. The X-ray ultrafast detection apparatus according to any one of claims 1 to 4, wherein:
the time domain amplifying mechanism (3) comprises a first polarization controller (31), a first dispersion controller (32), a pump laser (33), a second polarization controller (34), a second dispersion controller (35), a beam combiner (36), a four-wave mixer (37), a filter (38) and a third dispersion controller (39);
the test laser carrying the time domain information of the X-ray pulse signal enters a beam combiner (36) through a first polarization controller (31) and a first dispersion controller (32);
the pump laser emitted by the pump laser (33) enters the beam combiner (36) through the second polarization controller (34) and the second dispersion controller (35);
the mixed light output by the beam combiner (36) passes through a four-wave mixer (37), a filter (38) and a third dispersion controller (39) in sequence and is output.
6. The X-ray ultrafast detection apparatus of claim 5, wherein:
the laser (1) emits a test laser with a wavelength larger than that of an X-ray pulse signal to be tested.
7. An X-ray ultrafast detection method is characterized by being implemented according to the following steps:
1) transmitting test laser emitted by a laser (1) to a wavelength conversion mechanism (2), and simultaneously emitting an X-ray pulse signal to be tested into the wavelength conversion mechanism (2);
2) transmitting the time domain information of the X-ray pulse signal to be tested to the test laser through the wavelength conversion mechanism (2) to obtain the test laser carrying the time domain information of the X-ray pulse signal;
3) transmitting the test laser carrying the time domain information of the X-ray pulse signal obtained in the step 2) to a time domain amplifying mechanism (3), and performing time domain broadening and outputting on the test laser through the time domain amplifying mechanism (3);
4) converting the optical signal output by the time domain amplifying mechanism (3) in the step 3) into an electric signal by using a photoelectric detector (4) and outputting the electric signal;
5) and (3) detecting and displaying the electric signals output by the photoelectric detector (4) in the step (4) by using a readout circuit (5).
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