CN111342862B

CN111342862B - Radio frequency front end module supporting LTE/NR dual connection and mobile terminal

Info

Publication number: CN111342862B
Application number: CN202010366243.2A
Authority: CN
Inventors: 曹原; 胡自洁; 倪楠; 倪建兴
Original assignee: Ruishi Chuangxin Chongqing Technology Co ltd
Current assignee: Ruishi Chuangxin Chongqing Technology Co ltd
Priority date: 2019-12-17
Filing date: 2020-04-30
Publication date: 2021-09-17
Anticipated expiration: 2040-04-30
Also published as: CN111342861A; CN113676194A; CN113676194B; CN111342862A; CN111342861B

Abstract

The invention discloses a radio frequency front end module supporting LTE/NR dual connection and a mobile terminal, wherein a first amplification group, a second amplification group and a third amplification group are all arranged in one radio frequency front end module, so that the signal amplification of a 5G network is realized without additionally adopting a power amplifier supporting a 5G frequency band, and the dual connection of the 5G frequency band and a 4G frequency band can be realized in one radio frequency front end module, wherein one power amplifier can be compatible with part of the 5G frequency band and the 4G HB frequency band, thereby greatly improving the integration level of a product and reducing the cost of the product.

Description

Radio frequency front end module supporting LTE/NR dual connection and mobile terminal

Technical Field

The invention belongs to the field of radio frequency front ends, and particularly relates to a radio frequency front end module supporting LTE/NR dual connection and a mobile terminal.

Background

Wireless transmission refers to a manner of data transmission using wireless technology, and wireless transmission and wired transmission correspond. With the increasing development of wireless technology, wireless transmission technology is used in modern transportation, water conservancy, shipping, railway, public security, fire protection, border check stations, scenic spots, residential areas and other fields.

The wireless transmission is divided into: analog microwave transmission and digital microwave transmission; the analog microwave transmission is that the video signal is directly modulated on a microwave channel and is transmitted out through an antenna, the monitoring center receives the microwave signal through the antenna, and then the original video signal is demodulated through a microwave receiver. The digital microwave transmission is to compress video codes, modulate the video codes through a digital microwave channel, transmit the video codes through an antenna, receive signals through the antenna on the contrary at a receiving end, de-spread the microwave, unlock the video and restore the analog video signals.

Mobile communication is one of wireless transmission methods, and data transfer is realized by using a mobile network. With the continuous development of technologies, mobile communication has gone through 2G, 3G and 4G era, and in order to meet the increasing mobile traffic demand, a fifth generation mobile communication technology (5G) is being produced.

Like earlier 2G, 3G and 4G mobile networks, 5G networks are digital cellular networks in which the service area covered by a provider is divided into a number of small geographical areas known as cells. Analog signals representing sound and images are digitized in the handset, converted by an analog-to-digital converter and transmitted as a bit stream. All 5G wireless devices in a cell communicate by radio waves with local antenna arrays and low power autonomous transceivers (transmitters and receivers) in the cell. The transceiver allocates frequency channels from a common pool of frequencies that are reusable in geographically separated cells. The local antenna is connected to the telephone network and the internet through a high bandwidth fiber or wireless backhaul connection. As with existing handsets, when a user passes from one cell to another, their mobile device will automatically "switch" to the antenna in the new cell.

The main advantage of 5G networks is that the data transmission rate is much higher than in previous cellular networks, up to 10Gbit/s, faster than current wired internet, 100 times faster than in previous 4G lte cellular networks. Another advantage is lower network delay (faster response time), below 1 millisecond, and 30-70 milliseconds for 4G.

Currently, there are two networking modes for 5G, one is Non-independent Networking (NSA), and the other is independent networking (SA). Non-independent Networking (NSA) refers to the deployment of 5G networks using existing 4G infrastructure, and the 5G carriers based on the NSA architecture only carry user data, and their control signaling is still transmitted through the 4G network. And the independent networking (SA) refers to a newly-built 5G network, including a new base station, a backhaul link, and a core network. The networking mode of NSA can make the 5G network in a ready state as soon as possible, which is also a mode commonly used in the current 5G networking, and SA is a final target of 5G network evolution, in which a 5G service is accessed to a 5G core network under the direct control of a 5G base station.

The advantages of 5G NSA mainly include:

1. the 5G coverage range is expanded by means of the mature 4G network, and the 5G single station coverage range can be expanded by means of a mode (NSA) of combining and networking with 4G.

NSA was earlier than the SA standard finalize, so the corresponding product and testing work was basically completed, and theoretically the product was more mature.

3. Under NSA networking, the 5G base station utilizes the existing 4G core network, and the construction of the 5G core network is omitted.

The 5G NSA has great advantages in the aspect of rapid deployment of 5G, and can be upgraded on the basis of the original 4G base station, so that 5G signal coverage can be rapidly realized in a large scale in the initial stage of 5G construction, and a user can upgrade to a 5G network without changing cards or numbers.

Currently, 5G NSA relies on LTE/NR dual connectivity (EN-DC) technology implementation, i.e., a handset communicates with both 4G and 5G simultaneously. In the radio frequency front end, the EN-DC technology is usually realized by operating a 4G power amplifier and an externally-connected 5G power amplifier at the same time, which increases the usage amount of components.

Disclosure of Invention

The invention aims to provide an evading plug-in 5G N41 power amplifier, which can realize a radio frequency front-end module compatible with a 4G frequency band and a 5G frequency band and used for a 5G non-independent networking and supporting LTE/NR dual connection.

To achieve the objective of the present invention, an embodiment of the present invention provides a radio frequency front end module supporting LTE/NR dual connectivity, including:

the first amplification group is used for supporting a 5G frequency band and a 4G frequency band;

the second amplification group is used for supporting a 4G frequency band;

and the third amplification group is used for supporting the 4G frequency band.

Further, the second amplification group and the third amplification group are powered by a first power supply, and the first amplification group is powered by a second power supply.

Furthermore, the radio frequency front-end module further comprises a first power pin, a second power pin, a third power pin and a fourth power pin, and the second power supply supplies power to the first amplification group through the first power pin and the second power pin; the first power supply supplies power to the second amplification group and the third amplification group through the third power supply pin and the fourth power supply pin.

Further, the second amplification group supports a 4G MB frequency band and a 4G HB frequency band.

Further, the radio frequency front-end module further comprises a controller for providing bias current for the first amplification group, the second amplification group and the third amplification group, wherein the controller comprises a first bias circuit and a second bias circuit, and the first bias circuit is electrically connected with the first amplification group; the second bias circuit is electrically connected with the second amplification group and the third amplification group respectively.

Further, the second bias circuit comprises three biases, and each bias is respectively loaded on the second amplification group and the third amplification group through a single-pole double-throw switch or a single-pole multi-throw switch.

Further, at least one of the second amplification group and the third amplification group comprises: a first stage amplifier and a second stage amplifier;

in the three biases in the second bias circuit, two biases are loaded in the first-stage amplifier, and the third bias is loaded in the second-stage amplifier.

Further, the first amplification group includes a first stage amplifier and a second stage amplifier, the first bias circuit includes three biases, and of the three biases in the first bias circuit, two biases are loaded to the first stage amplifier, and a third bias is loaded to the second stage amplifier.

Further, the radio frequency front-end module further comprises a controller for providing bias currents for the first amplification group, the second amplification group and the third amplification group, the controller comprises a first bias circuit, a second bias circuit and a third bias circuit, and the first bias circuit is electrically connected with the first amplification group; the second bias circuit is electrically connected with the second amplification group, and the third bias circuit is electrically connected with the third amplification group.

An embodiment of the present invention further provides a mobile terminal, including the above radio frequency front end module supporting LTE/NR dual connectivity.

An embodiment of the present invention further provides a 5G power amplifier architecture supporting non-independent networking, where the amplifier architecture includes:

the second amplification group is used for supporting a 4G frequency band; and the number of the first and second groups,

the third amplification group is used for supporting a 4G frequency band;

the frequency bands of the 4G frequency bands supported by the first amplification group, the second amplification group and the third amplification group are the same or different.

Further, the first amplification group, the second amplification group, and/or the third amplification group include an input matching circuit, a first stage amplifier, an intermediate matching circuit, a second stage amplifier, and an output matching circuit.

The first amplification group uses the first power supply pin and the second power supply pin; the second amplification group and the third amplification group share the third power supply pin and the fourth power supply pin.

Further, the first power pin and the second power pin are powered by one power source, and the third power pin and the fourth power pin are powered by another power source.

Further, a controller is included that provides bias currents to the first, second, and third amplification groups.

Further, the controller comprises a first bias circuit and a second bias circuit, wherein the first bias circuit provides bias current for the first amplification group; the second bias circuit provides bias currents for the second amplification group and the third amplification group respectively.

Further, the first bias circuit includes a three-way bias.

Further, the controller includes a first bias circuit, a second bias circuit, and a third bias circuit that provide bias signals for the first amplification group, the second amplification group, and the third amplification group, respectively.

Further, the first bias circuit, the second bias circuit, and/or the third bias circuit comprise a three-way bias.

Furthermore, the frequency range of 5G supported by the first amplification group is 2496MHz-2690MHz, and the frequency range of 4G supported by the first amplification group is 2300MHz-2690 MHz; the range of the 4G frequency band supported by the second amplification group is 1710MHz-1980 MHz; the range of the 4G frequency band supported by the third amplification group is 663MHz-915 MHz.

An embodiment of the present invention further provides a radio frequency front end module supporting LTE/NR dual connectivity for a 5G non-independent networking, where the radio frequency front end module includes a baseband chip and a switch group, where the baseband chip is used to generate a 4G full-band signal and a 5G band signal, and output ends of the baseband chip are loaded on a lower circuit through the switch group, respectively.

Further, the switch set includes a first single pole double throw switch and a second single pole double throw switch.

Further, the baseband chip outputs a 5G signal, a 4G-HB signal, a 4G-MB signal and a 4G-LB signal, and the output 5G signal and the output 4G-HB signal are respectively loaded on two immobile terminals of the first single-pole double-throw switch; the output 4G-HB signal is also loaded on one motionless end of the second single-pole double-throw switch, and a 4G-MB signal is loaded on the other motionless end of the second single-pole double-throw switch; and the movable ends of the first single-pole double-throw switch and the second single-pole double-throw switch are respectively used as output ends.

Furthermore, the full-band radio frequency front end module is further included, and the 4G-LB signal is loaded at the input end of the full-band radio frequency front end module.

Furthermore, the full-band radio frequency front-end module is a 4G full-band radio frequency module compatible with a 5G damping frequency band.

Furthermore, the full-band radio frequency front end module is further included, and 4G full-band signals and 5G band signals output by the baseband chip are loaded at the input end of the full-band radio frequency front end module through the switch group.

Further, the full-band radio frequency front end module includes:

the third amplification group is used for supporting a 4G frequency band;

The invention has the beneficial effects that: in the radio frequency front end module supporting the LTE/NR dual connection provided by the embodiment of the present invention, because the first amplification group, the second amplification group, and the third amplification group are all disposed in one radio frequency front end module, signal amplification of a 5G network is achieved without additionally employing a plug-in power amplifier supporting a 5G frequency band, and dual connection of a 5G frequency band and a 4G frequency band can be achieved in one radio frequency front end module, wherein one power amplifier can be compatible with a part of the 5G frequency band and the 4G HB frequency band, thereby greatly improving the integration level of a product and reducing the cost of the product.

Drawings

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention. It is obvious that the drawings in the following description are only some embodiments of the invention, and that for a person skilled in the art, other drawings can be derived from them without inventive effort. In the drawings:

fig. 1 is a schematic circuit diagram of a radio frequency front end module according to the present invention;

FIG. 2 is a second schematic circuit diagram of the RF front-end module according to the present invention;

FIG. 3 is a schematic diagram of a circuit structure of an amplifying group provided by the present invention;

FIG. 4 is a schematic diagram of a circuit configuration of a bias circuit provided by the present invention;

FIG. 5 shows a circuit connection diagram between the bias circuit and the amplification block provided by the present invention;

FIG. 6 is a block diagram of a RF front-end device according to the present invention;

fig. 7 is a 4G-LTE working schematic diagram of the radio frequency front-end device provided in the present invention;

fig. 8 is a 4G MB +5G N41 endec operation schematic diagram of the rf front-end device provided by the present invention;

fig. 9 is a 4G LB +5G N41 endec operating schematic diagram of the rf front-end device provided by the present invention;

fig. 10 is a schematic diagram of the 4G B40+5G N41 endec operation of the rf front-end device provided by the present invention;

in the drawings: the circuit comprises a 1-baseband chip, a 2-switch group, a 3-full-band radio frequency front-end module, a 21-first single-pole double-throw switch, a 22-second single-pole double-throw switch, a 31-first amplification group, a 32-second amplification group, a 33-third amplification group, a 34-controller, a 35-switch, a 36-input matching circuit, a 37-first-stage amplifier, a 38-middle matching circuit, a 39-second-stage amplifier, a 310-output matching circuit, a 341-first bias circuit, a 342-second bias circuit and a 343-third bias circuit.

Detailed Description

Exemplary embodiments will now be described more fully with reference to the accompanying drawings. The exemplary embodiments, however, may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. In the drawings, the size of some of the elements may be exaggerated or distorted for clarity. The same reference numerals denote the same or similar structures in the drawings, and thus detailed descriptions thereof will be omitted.

Furthermore, the described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to give a thorough understanding of embodiments of the disclosure. One skilled in the relevant art will recognize, however, that the subject matter of the present disclosure can be practiced without one or more of the specific details, or with other methods, components, etc. In other instances, well-known structures, methods, or operations are not shown or described in detail to avoid obscuring aspects of the disclosure.

Fig. 1 to 5 show the schematic structure of the radio frequency front-end module supporting LTE/NR dual connectivity for 5G non-independent networking according to the present invention, and the specific structure of the front-end module is embodied by the following examples.

Specifically, an embodiment of the present invention provides a radio frequency front end module supporting LTE/NR dual connectivity, and optionally, the radio frequency front end module is a 4G full-band radio frequency module compatible with a 5G refarming band. As shown in fig. 1-5, the rf front-end module includes: the first amplification group is used for supporting a 5G frequency band and a 4G frequency band; the second amplification group is used for supporting a 4G frequency band; and the third amplification group is used for supporting the 4G frequency band.

In this embodiment, the first amplification group may support a 5G band and a 4G band, wherein the first amplification group may support at least one 5G band, for example: n41 frequency band. Optionally, the first amplification group may support the 4G HB band. In a preferred embodiment, the first amplification group can support the 5G N41 band and the 4G HB band.

The second amplification group is configured to support a 4G frequency band, and optionally, the second amplification group may support a 4G MB frequency band. Preferably, the second amplification group can support the 4G HB band and the 4G MB band.

The third amplification group is configured to support a 4G band, and optionally, the third amplification group may support a 4G LB band.

In this embodiment, the first amplification group, the second amplification group and the third amplification group are all disposed in one radio frequency front end module, so that signal amplification of a 5G network is realized without additionally adopting a plug-in power amplifier supporting a 5G frequency band, dual connection of the 5G frequency band and a 4G frequency band can be realized in one radio frequency front end module, wherein one power amplifier can be compatible with part of the 5G frequency band and the 4G HB frequency band, thereby greatly improving the integration level of a product and reducing the cost of the product.

Preferably, as shown in fig. 1-2, in a specific embodiment, the first amplification group 31 is configured to support the N415G band and the 4G HB band, the second amplification group 32 is configured to support the 4G MB band, and the third amplification group 33 is configured to support the 4G LB band. The first amplification group 31, the second amplification group 32 and the third amplification group 33 are respectively an independent HB/N41 PA module, an MB PA module and an LB PA module. IN the radio frequency front-end module, an input pin of an HB/N41 PA module is HB/N41-IN, and an output pin is HB/N41-OUT; an input pin of the MB PA module is MB-IN, and an output pin of the MB PA module is MB-OUT; the input pin of the LB PA module is LB-IN, and the output pin is LB-OUT.

Wherein, the frequency range of the N415G is 2496MHz-2690MHz, and the frequency range of the 4G HB is 2305MHz-2690 MHz; the frequency range of the 4G MB is 1710MHz-1980 MHz; the frequency range of the 4G LB is 660MHz-915 MHz.

It should be noted that, in the present embodiment, the first amplification group supports the N415G frequency band and the 4G HB frequency band, the second amplification group supports the 4G MB frequency band, and the third amplification group supports the 4G LB frequency band, which is taken as an example to describe the radio frequency front end module of the present invention, but those skilled in the art will understand that the first amplification group supports the N415G frequency band and the 4G HB frequency band, the second amplification group supports the 4G MB frequency band, and the third amplification group supports the 4G LB frequency band, which is only exemplary and not limiting for the radio frequency front end module of the embodiment of the present disclosure.

The invention provides a working mode of a radio frequency front end module supporting LTE/NR dual connection, which comprises the following steps: N41/HB and MB, N41/HB and LB. The first amplification group 1 supports both the 5G N41 frequency band and the 4G HB frequency band, and a 5G N41 PA module is not required to be additionally equipped.

Further, in a specific embodiment, the second amplification group and the third amplification group are powered by a first power source, and the first amplification group is powered by a second power source.

As shown in fig. 1-2, the rf front-end module is powered by two external power sources, wherein the first power source DC-DC power source 1 supplies power to the second amplification group and the third amplification group. A second power supply DC-DC power supply 2 supplies power to the first amplification group.

In this embodiment, since in the dual connection mode, the rf front-end module is in the dual connection mode by any one of the first amplification group and the second amplification group, and the third amplification group, in order to perform better power isolation and avoid signal interference. And when the integration level is ensured, independent power supplies are respectively adopted for power supply in the signal amplification process, so that better power supply isolation is ensured, and the performance of the power amplifier is prevented from being influenced.

In one embodiment, the rf front-end module further includes a first power pin, a second power pin, a third power pin, and a fourth power pin, and the second power pin supplies power to the first amplification group through the first power pin and the second power pin; the first power supply supplies power to the second amplification group and the third amplification group through the third power supply pin and the fourth power supply pin. The first amplification group uses the first power supply pin and the second power supply pin; the second amplification group and the third amplification group share the third power supply pin and the fourth power supply pin.

As shown in fig. 1-2, the second power DC-DC power supply 2 for supplying power to the first amplification group 31 is connected to the corresponding first amplification group through the first power pin N41_ HB _ VCC1 and the second power pin N41_ HB _ VCC 2; thereby enabling the DC-DC power supply 2 to supply power to the first amplification group. The first power supply DC-DC power supply 1 supplying power to the second and third amplification groups is connected to the corresponding second and

third amplification groups

32 and 33 through the third and fourth power supply pins MB _ LB _ VCC1 and MB _ LB _ VCC 2. It is to be understood that the second amplification group 32 and the third amplification group 33 share the third power supply pin MB _ LB _ VCC1 and the fourth power supply pin MB _ LB _ VCC 2; thereby realizing that the DC-DC power supply 1 supplies power for the second amplification group and the third amplification group.

In this embodiment, the first amplification group is powered by one power supply, the second amplification group and the third amplification group are powered by another power supply, and the radio frequency front-end module supporting LTE/NR dual connection respectively adopts independent power supplies to supply power in the signal amplification process, so that better power isolation is ensured, and the performance of the power amplifier is prevented from being affected.

Specifically, as shown in fig. 1-2, the first amplification group is connected to a DC-DC power supply 2 by using the first power supply pin N41_ HB _ VCC1 and the second power supply pin N41_ HB _ VCC2, one end of the first power supply pin N41_ HB _ VCC1 and one end of the second power supply pin N41_ HB _ VCC2 are connected to the DC-DC power supply 2, and the other end of the first power supply pin N41_ HB _ VCC1 and the second power supply pin N41_ HB _ VCC2 are connected to an input end of the first amplification group; the first power supply pin N41_ HB _ VCC1 and the second power supply pin N41_ HB _ VCC2 are powered by a DC-DC power supply 2.

The second amplification group and the third amplification group are connected to another DC-DC power supply 1 by using the third power supply pin and the fourth power supply pin; one end of the third power supply pin MB _ LB _ VCC1 and one end of the fourth power supply pin MB _ LB _ VCC2 are respectively connected to a DC-DC power supply 1, and the other end of the third power supply pin MB _ LB _ VCC1 and the other end of the fourth power supply pin MB _ LB _ VCC2 are connected to the input end of the second amplification group and the input end of the third amplification group; the second amplifying group 32 and the third amplifying group 33 share a third power supply pin MB _ LB _ VCC1 and a fourth power supply pin MB _ LB _ VCC 2; the third and fourth power supply pins are powered by another DC-DC power supply 1.

In one embodiment, the second amplification group supports a 4G MB band and a 4G HB band. In this embodiment, the second amplification group may support a 4G MB band and a 4G HB band. Preferably, the second amplification group can support a 4G MB band and a 4G B40 band. Specifically, the second amplification group may employ a wideband power amplifier to support the 4G MB frequency band and the 4G HB frequency band.

The second amplification group can support the 4G MB frequency band and the 4G HB frequency band, so that the radio frequency front-end module can support different working modes. Illustratively, a 5G signal may be coupled to the first amplification group and a 4G-HB signal may be coupled to the second amplification group, or a 4G-HB signal may be coupled to the first amplification group and a 4G-MB signal may be coupled to the second amplification group, or a 5G signal may be coupled to the first amplification group and a 4G-MB signal may be coupled to the second amplification group. The radio frequency front-end module can support application under different scenes, and application flexibility is achieved.

In one embodiment, the rf front-end module further includes a controller for providing bias currents to the first, second, and third amplification groups, the controller including a first bias circuit and a second bias circuit, the first bias circuit being electrically connected to the first amplification group; the second bias circuit is electrically connected with the second amplification group and the third amplification group respectively.

Specifically, as shown in fig. 1, the controller 34 includes a first bias circuit 341 and a second bias circuit 342, and the first bias circuit 341 is electrically connected to the first amplification group 31 to provide a bias current for the first amplification group 31; the second bias circuit 342 is electrically connected to the second amplification group 32 and the third amplification group 33, respectively, and provides bias currents to the second amplification group 32 and the third amplification group 33, respectively. The first bias circuit 341 controls the operation of the first amplification group 31, and the second bias circuit 342 controls the second amplification group 32 and the third amplification group 33 to operate simultaneously, or controls only the second amplification group 32 or the third amplification group 33 to operate.

It should be noted that, in this embodiment, the first bias circuit 341, the second bias circuit 342, and the third bias circuit 343 may be one-way bias circuits or multiple-way bias circuits, and three-way bias circuits are adopted in this structure, that is, the first bias circuit 341, the second bias circuit 342, and the third bias circuit 343 respectively include three-way biases, as shown in fig. 9; or one or two of the first bias circuit 341, the second bias circuit 342, and the third bias circuit 343 may include three-way bias, and the rest may be one-way or two-way bias.

Further, the second bias circuit comprises three biases, and each bias is respectively loaded on the second amplification group and the third amplification group through a single-pole double-throw switch or a single-pole multi-throw switch. That is, each bias can be loaded on any one of the second amplification group and the third amplification group through a single-pole double-throw switch or a single-pole multi-throw switch output.

Specifically, when the second bias circuit 342 includes three-way biases, the circuit connection relationship between the second amplification group 32 and the third amplification group 33 is as shown in fig. 10, and the three-way biases of the second bias circuit 342 are respectively loaded on the second amplification group 32 and the third amplification group 33 through the single-pole double-throw switch or the single-pole multi-throw switch; the frequency band can be selected through a single-pole double-throw switch or a single-pole multi-throw switch according to actual conditions, so that the controllability of frequency band selection is realized.

In one embodiment, the rf front-end module further includes a controller for providing bias currents to the first, second, and third amplification groups, the controller including a first bias circuit, a second bias circuit, and a third bias circuit, the first bias circuit being electrically connected to the first amplification group; the second bias circuit is electrically connected with the second amplification group, and the third bias circuit is electrically connected with the third amplification group.

In a specific embodiment, as shown in fig. 2, the controller 34 may further include a first bias circuit 341, a second bias circuit 342, and a third bias circuit 343 for providing bias signals to the first amplifying group 31, the second amplifying group 32, and the third amplifying group 33, respectively. The first bias circuit 341, the second bias circuit 342, and the third bias circuit 343 may control the operations of the first amplification group 31, the second amplification group 32, and the third amplification group 33 at the same time, or may control only one or two of the first amplification group 31, the second amplification group 32, and the third amplification group 33 to operate. The outputs of the first bias circuit 341, the second bias circuit 342, and the third bias circuit 343 are directly loaded on the first amplification group 31, the second amplification group 32, and the third amplification group 33.

The first bias circuit 341, the second bias circuit 342, and the third bias circuit 343 of the controller may be implemented by any method, and here, a bias circuit formed by one or more COM current sources is used, as shown in fig. 4 and 5.

Additionally, fig. 3 shows a specific circuit structure of the first amplification group 31, the second amplification group 32, and/or the third amplification group 33 described in the present disclosure, including an input matching circuit 36, a first stage amplifier 37, an intermediate matching circuit 38, a second stage amplifier 39, and an output matching circuit 310. The specific circuit structures of the first amplification group 31, the second amplification group 32 and/or the third amplification group 33 are all the prior art, and redundant description is not repeated here.

Specifically, if the bias circuit in the controller is biased three-way, two of the biases (Iref3 and Iref1) are loaded in the first-stage amplifier 37, and the third bias (Iref2) is loaded in the second-stage amplifier 39.

An embodiment of the present invention further provides a mobile terminal, which may be a mobile phone, a tablet computer, or another portable terminal with a communication function. The mobile terminal comprises the radio frequency front end device supporting LTE/NR dual connection according to any embodiment.

An embodiment of the present invention further provides a radio frequency front end device supporting LTE/NR dual connectivity, including a switch block and a radio frequency front end module supporting LTE/NR dual connectivity, where the switch block is configured to receive signals of different frequency bands and input the signals into the radio frequency front end module, and the radio frequency front end module supports amplification of 4G and 5G signals.

Specifically, as shown in fig. 6 to 10, the switch set is configured to receive signals of different frequency bands and input the signals into the rf front-end module. Optionally, the radio frequency front-end module is a 4G full-band radio frequency module compatible with a 5G damping band. The radio frequency front-end module provided by the invention can be used for replacing the scheme that at least two (4G full-band power amplifiers and plug-in 5G N41 power amplifiers) modules are required to realize double connection in the traditional EN-DC solution.

In one embodiment, the signals of different frequency bands are signals generated by an external device. For example: the signals of different frequency bands can be LTE full-band signals and NR frequency band signals. Preferably, in the present embodiment, the LTE full band signal and the NR band signal are signals generated by the baseband chip 1. The output end of the baseband chip 1 outputs an NR frequency band signal and at least a part of LTE full-band signal, and the NR frequency band signal and the LTE full-band signal are loaded on the input end of the radio frequency front-end module 3 through the switch group 2 respectively.

Specifically, the switch group 2 included in the radio frequency front-end device supporting LTE/NR dual connection includes a plurality of paths, and an input end of each path loads a signal in a different frequency band; the output of different frequency bands can be realized by controlling the on and off of one or more paths in the switch group 2 by external signals. The plurality of paths may be constituted by independent switches, i.e. the switch group 2 comprises a plurality of switches, each switch comprising one or more paths.

In this embodiment, signals of different frequency bands are received by the switch group and input to the rf front end module; the on/off of the switch group can realize the output of signals of different frequency bands (output to the radio frequency front end module); thereby realizing EN-DC (LTE/NR dual connection) of an LTE frequency band and an NR frequency band.

Furthermore, the radio frequency front end module comprises a first amplification group and a second amplification group; the switch group is used for receiving signals of different frequency bands and inputting the signals into the first amplification group and the second amplification group respectively. Illustratively, the switch group receives signals of one frequency band and inputs the signals into the first amplification group, and the switch group receives signals of another frequency band and inputs the signals into the second amplification group.

Specifically, the switch group respectively inputs the received signals of different frequency bands into the first amplification group and the second amplification group. Optionally, the first amplification group supports a 5G band and a 4G band; and the second amplification group supports a 4G frequency band. A switch bank may input received NR band signals into the first amplification bank and received LTE band signals into the second amplification bank.

Further, the switch group receives any two signals of a 5G signal, a 4G HB signal and a 4G MB signal, and inputs the received two signals into the first amplification group and the second amplification group, respectively.

As shown in fig. 1-5, the first amplifying group is configured to support a 5G band and a 4G band; and the second amplification group is used for supporting the 4G frequency band. In an embodiment, the first amplification group may support a 5G band and a 4G band, wherein the first amplification group may support at least one 5G band, for example: n41 frequency band. Optionally, the first amplification group may support the 4G HB band. In a preferred embodiment, the first amplification group can support the 5G N41 band and the 4G HB band. The second amplification group is configured to support a 4G frequency band, and optionally, the second amplification group may support a 4G MB frequency band. Preferably, the second amplification group can support the 4G HB band and the 4G MB band.

Exemplarily, the following steps are carried out: and if the signals received by the switch group are 5G signals and 4G HB signals, inputting the 5G signals into the first amplification group, and inputting the 4G HB signals into the second amplification group. And if the signals received by the switch group are 5G signals and 4G MB signals, inputting the 5G signals into the first amplification group, and inputting the 4G MB signals into the second amplification group. And if the signals received by the switch group are 4G HB signals and 4G MB signals, inputting the 4G HB signals into the first amplification group, and inputting the 4G MB signals into the second amplification group.

Further, the signals received by the switch group comprise 5G signals, 4G-HB signals and 4G-MB signals, the 5G signals and the 4G-HB signals are coupled to a first amplification group of the radio frequency front end module through the switch group, and the 4G-HB signals and the 4G-MB signals are coupled to a second amplification group of the radio frequency front end module through the switch group.

Specifically, the signals received by the switch group comprise 5G signals, 4G-HB signals, 4G-MB signals and 4G-LB signals, the 5G signals and the 4G-HB signals are coupled to the HB-IN terminal of the first amplification group of the radio frequency front end module through the switch group, and the 4G-HB signals and the 4G-MB signals are coupled to the MB-IN terminal of the second amplification group of the radio frequency front end module through the switch group.

Further, the rf front end module further includes: and the third amplification group is used for receiving and amplifying the 4G LB signals.

Optionally, the third amplification group may support amplification of 4G LB band signals. Preferably, the signals received by the switch block further include 4G-LB signals. The 4G-LB signal is coupled to the LB-IN end of the third amplification group of the radio frequency front end module.

Further, the radio frequency front-end device comprises a first working mode and a second working mode.

In the first operating mode, the switch block couples a 5G signal to a first amplification block of the rf front-end module, and the switch block couples a 4G-HB signal to a second amplification block of the rf front-end module.

As shown in FIG. 6, the first operating mode is a 4G B40+5G N41 ENDC operating mode, the first SPDT switch 21 routes the 1-1 path of the first amplification group, and the second SPDT switch 22 routes the 2-1 path of the second amplification group; after the MB PA expands the bandwidth, the MB PA is used for supporting power amplification of 4G B40; the HB PA operates simultaneously as an N41 power amplifier.

In the second operating mode, the switch block couples the 4G-HB signals to the first amplification block of the RF front-end module, and the switch block couples the 4G-MB signals to the second amplification block of the RF front-end module.

As shown in fig. 7, the second operating mode is a 4G-LTE operating mode, the moving end of the first single-pole double-throw switch 21 is connected to the 1-2 path of the first amplification group, the second single-pole double-throw switch 22 is connected to the 2-2 path of the second amplification group, and any one of the 4G LB/MB/HB PAs operates.

Further, the radio frequency front end device further comprises a third working mode. In the third operating mode, the switch block couples a 5G signal to the first amplification block of the rf front-end module, and the switch block couples a 4G-MB signal to the second amplification block of the rf front-end module.

As shown in fig. 8, the third operating mode is a 4G MB +5G N41 endec operating mode, the first spdt switch 21 opens the 1-1 path of the first amplification group, and the second spdt switch 22 opens the 2-2 path of the second amplification group; the 4G MB PA and the N41-compatible HB PA operate simultaneously.

Further, the radio frequency front end device further comprises a fourth operation mode. In a fourth mode of operation, the switch bank couples a 5G signal to the first amplification bank, and the third amplification bank receives a 4G LB signal.

As shown in fig. 9, the fourth operating mode is the 4G LB +5G N41 endec operating mode, with the first single pole double throw switch 21 opening the 1-1 path of the first amplification group, which receives the 4G LB signal. Additionally, the second SPDT switch 22 may open the 2-1 path or the 2-2 path of the second amplification group; the 4G LB PA and the N41 compatible HB PA work simultaneously.

Two fixed ends of the first single-pole double-throw switch are respectively used for coupling a 5G signal and a 4G HB signal, and a movable end of the first single-pole double-throw switch is coupled to a first amplification group of the radio frequency front-end module;

two fixed ends of the second single-pole double-throw switch are respectively used for coupling the 4G HB signal and the 4G MB signal, and a movable end of the second single-pole double-throw switch is coupled to the second amplification group of the radio frequency front-end module.

In a specific embodiment, the switch set includes a first single-pole-multiple-throw switch and a second single-pole-multiple-throw switch; the first single-pole multi-throw switch is used for coupling the 5G signal and the 4G-HB signal to an HB-IN end of a first amplification group of the radio frequency front-end module; the second single-pole-multi-throw switch is used for coupling the 4G-HB signals and the 4G-MB signals to MB-IN ends of a second amplification group of the radio frequency front-end module.

In the present embodiment, in order to simplify the circuit configuration and reduce the use of components, the switch group 2 is configured by using the first single-pole double-throw switch 21 and the second single-pole double-throw switch 22. The specific connection relationship between the first single-pole double-throw switch 21 and the second single-pole double-throw switch 22 will be described herein by taking the 5G signal, the 4G-HB signal, the 4G-MB signal, and the 4G-LB signal as examples.

As shown in fig. 6 to 10, the 5G signal and the 4G-HB signal are respectively applied to the two stationary terminals of the first single pole double throw switch 21; the 4G-HB signal is also loaded on one motionless end of the second single-pole double-throw switch 22, and the other motionless end of the second single-pole double-throw switch 22 is loaded with a 4G-MB signal; the moving ends of the first single-pole double-throw switch 21 and the second single-pole double-throw switch 22 are respectively used as output ends. A 1-1 path is formed between the first single-pole double-throw switch 21 and the 5G signal, and a 1-2 path is formed between the 4G-HB signals; a 2-1 path is formed between the second single pole double throw switch 2 and the 4G-HB signal of the baseband chip 1, and a 2-2 path is formed between the 4G-MB signals. Additionally, on the basis of the above example, the 4G-LB signal is directly applied to the input of the rf front-end module 3.

The english term used in this disclosure is defined as:

HB is High Band, MB is Mid Band, LB is Low Band, PA is power amplifier, and N41 is 5G Band.

The present disclosure has been described in terms of the above-described embodiments, which are merely exemplary of the implementations of the present disclosure. It must be noted that the disclosed embodiments do not limit the scope of the disclosure. Rather, variations and modifications are possible within the spirit and scope of the disclosure, and these are all within the scope of the disclosure.

Claims

1. A radio frequency front end module supporting LTE/NR dual connectivity, comprising:

the second amplification group is used for supporting a 4G frequency band;

the third amplification group is used for supporting a 4G frequency band;

the radio frequency front-end module further comprises a controller for providing bias current for the first amplification group, the second amplification group and the third amplification group, the controller comprises a first bias circuit and a second bias circuit, and the first bias circuit is electrically connected with the first amplification group; the second bias circuit is electrically connected with the second amplification group and the third amplification group respectively;

the second bias circuit comprises three biases, and each bias is respectively loaded on the second amplification group and the third amplification group through the output of a single-pole double-throw switch or a single-pole multi-throw switch.

2. The LTE/NR dual-connectivity enabled radio frequency front end module of claim 1, wherein the second amplification group and the third amplification group are powered by a first power source, and wherein the first amplification group is powered by a second power source.

3. The radio frequency front end module supporting LTE/NR dual connectivity of claim 2, further comprising a first power pin, a second power pin, a third power pin, and a fourth power pin, wherein the second power pin supplies power to the first amplification group through the first power pin and the second power pin; the first power supply supplies power to the second amplification group and the third amplification group through the third power supply pin and the fourth power supply pin.

4. The radio frequency front end module supporting LTE/NR dual connectivity of claim 1, wherein the second amplification group supports 4G MB band and 4G HB band.

5. The radio frequency front end module supporting LTE/NR dual connectivity of claim 1, wherein at least one of the second amplification group and the third amplification group comprises: a first stage amplifier and a second stage amplifier;

6. A radio frequency front end module supporting LTE/NR dual connectivity, comprising:

the second amplification group is used for supporting a 4G frequency band;

the third amplification group is used for supporting a 4G frequency band;

the first amplification group comprises a first-stage amplifier and a second-stage amplifier, the first bias circuit comprises three biases, two biases of the three biases in the first bias circuit are loaded in the first-stage amplifier, and the third bias is loaded in the second-stage amplifier.

7. The LTE/NR dual-connection capable radio frequency front end module of claim 6, wherein the second amplification group and the third amplification group are powered by a first power source, and wherein the first amplification group is powered by a second power source.

8. The radio frequency front end module supporting LTE/NR dual connectivity of claim 7, further comprising a first power pin, a second power pin, a third power pin, and a fourth power pin, wherein the second power pin supplies power to the first amplification group through the first power pin and the second power pin; the first power supply supplies power to the second amplification group and the third amplification group through the third power supply pin and the fourth power supply pin.

9. The radio frequency front end module supporting LTE/NR dual connectivity of claim 6, wherein the second amplification group supports 4G MB band and 4G HB band.

10. A mobile terminal comprising a radio frequency front end module supporting LTE/NR dual connectivity according to any of claims 1-9.