CN111276523B - Quantum dot display for streaming media rearview mirror and preparation method thereof - Google Patents

Quantum dot display for streaming media rearview mirror and preparation method thereof Download PDF

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CN111276523B
CN111276523B CN202010087957.XA CN202010087957A CN111276523B CN 111276523 B CN111276523 B CN 111276523B CN 202010087957 A CN202010087957 A CN 202010087957A CN 111276523 B CN111276523 B CN 111276523B
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CN111276523A (en
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陈静
潘江涌
汪丽茜
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Southeast University
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
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    • H10K50/81Anodes
    • H10K50/818Reflective anodes, e.g. ITO combined with thick metallic layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/35Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
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Abstract

The invention discloses a quantum dot display for a streaming media rearview mirror and a preparation method thereof. The invention adopts an inverted quantum dot display to replace a liquid crystal display and a reflecting lens in the original streaming media rearview mirror system, and adopts the quantum dot display to display and reflect light. Aiming at the problem of low efficiency of the inversion type quantum dot device, the device is prepared by adopting a full wet method, and the polymer cross-linking agent is added into the hole injection layer, so that the problem of poor wettability of an upper layer solution and a lower layer film in the inversion type device is solved, and the film forming quality after spin coating is improved; meanwhile, as the cathode of the device adopts a transparent electrode and the anode adopts a metal electrode, when the device does not work, the metal electrode with high reflectivity can be used as a mirror surface; when the device works, the streaming media image is displayed, the metal electrode can enhance the display effect and increase the observable display visual angle. Therefore, the development and application of the inverted quantum dot light emitting device in the field of vehicle display have important significance.

Description

Quantum dot display for streaming media rearview mirror and preparation method thereof
Technical Field
The invention belongs to the technical field of quantum dot displays, and particularly relates to a quantum dot display structure for a streaming media rearview mirror and a preparation method thereof.
Background
With the development of automobile technology, the streaming media rearview mirror is more and more popular among people. The streaming media rearview mirror is characterized in that a display screen is used for replacing a previous reflector, the road condition behind a vehicle is shot in real time through a camera, and the image is displayed on the display screen. When the stream media rearview mirror is lightened, images in front of and behind the automobile can be displayed and shot; when the streaming mirror is not illuminated, it can be used as a normal mirror to reflect things behind the vehicle. Although the existing streaming media rearview mirror is convenient for a driver to view the scene behind the vehicle and enlarges the visual field range of the driver, the following problems still exist: due to the existence of the reflecting lens, the display brightness of the image of the streaming media rearview mirror is reduced, the streaming media rearview mirror is easily influenced by the external environment, and when the external light is dark, the signal captured and sensed by the camera on the rearview mirror is weak, so that the image effect observed by human eyes is poor; meanwhile, the metal film on the reflecting mirror surface reflects light when the flow media rearview mirror is not lightened and transmits light when the flow media rearview mirror is lightened, and the process preparation difficulty is increased due to the requirement of the film thickness.
A quantum dot light emitting diode (QLED) is a new type of display device that is applied to an organic or polymer electroluminescent device using a quantum dot material as a light emitting layer. The half-peak width of the emission spectrum of the quantum dot is narrow, and the spectral range can be shifted along with the change of the size of the quantum dot, so that the QLED device not only has high luminous efficiency, but also can cover the whole visible spectral range. Therefore, in recent years, research on QLED devices has received much attention from research groups at home and abroad.
At present, compared with an upright quantum dot light emitting diode device, the energy efficiency of the inverted top-emitting quantum dot light emitting diode device is low, and the energy efficiency of the device is reduced mainly because the injection of electron holes is unbalanced, and the mobility of electrons is higher than that of holes, namely, internal charge quenching can be generated.
Disclosure of Invention
The purpose of the invention is as follows: the invention aims to provide a quantum dot display structure for a streaming media rearview mirror and a preparation method thereof. The original liquid crystal display and the original reflecting lens are replaced by the inverted QLED device, light of the device can be emitted from the top transparent electrode, and the device can be directly used as the reflecting lens when the streaming media rearview mirror is not lightened, and the reflecting lens does not need to be added independently, so that the structure of the streaming media rearview mirror system is greatly simplified.
The technical scheme is as follows: in order to achieve the above object, the quantum dot display of the streaming media rearview mirror is used to replace a liquid crystal display and a reflective lens in an original streaming media rearview mirror system, and the quantum dot display is used for displaying and reflecting light; the quantum dot display comprises a substrate, and a metal layer, an electron transport layer, a nano barrier layer, a quantum dot layer, a hole transport layer, a hole injection layer and a transparent electrode which are sequentially formed on the substrate; the quantum dot display is directly used as a reflector when not lighted, and the reflector does not need to be added independently. The quantum dot light-emitting diode device is driven by a certain voltage, electrons and holes are compounded in the quantum dot layer to emit light. The nanometer barrier layer is used for preventing the mutual permeation and dissolution of the quantum dots, and the performance of the device is improved.
In a preferred embodiment, the nano barrier layer is made of a single layer of nano magnesium oxide (MgO) or tin oxide (SnO) 2 ) The particle size is 1-10 nm.
In a preferred embodiment, the substrate may be glass, silicon wafer, metal, quartz, ITO-coated polyethylene terephthalate film (ITO-PET) flexible substrate, Polyetherimide (PEI) flexible substrate, or the like; the metal electrode can be a metal target material, such as gold, silver, platinum, or aluminum, which is deposited on the substrate by evaporation. In a preferred embodiment, the transparent electrode is sprayed and printed on the hole injection layer by adopting a nano silver, gold or gold nano wire solution, and due to the coffee ring effect, the liquid drops form metal rings with the diameter of about 150nm and the width of less than 10nm after being dried. If the printed liquid drops are enough, the silver rings, the gold rings and the platinum rings are mutually overlapped, so that a layer of conductive coating is formed on the surface of the plastic, the drying temperature is 80-150 ℃, the drying time is 10-30 minutes, the film thickness is 5-20nm, and meanwhile, as light can still smoothly penetrate through the center of the nano ring, the light transmittance is more than 70 percent, a transparent conductive electrode is formed.
In a preferred embodiment, the transparent electrode can be prepared by using a noble metal precursor solution to prepare metal nanowires, and is prepared on a substrate by adopting a spin coating or printing mode; such as gold perchlorate HAuCl 4 Adding sodium citrate (mass fraction is 0.1-1%) into the aqueous solution (mass fraction is 0.01-1%), heating to boil, and reacting for 1-10 min to generate gold nanoparticles; and spin-coating or printing the gold nanoparticles on the hole injection layer, and drying at 80-150 ℃ for 10-30 minutes. Or using chloroplatinic acid H 2 PtCl 6 Dissolving in ethylene glycol EG to form 0.1-1mg/mL solution, adding a certain amount of NaOH/EG solution to adjust the pH value of the solution to be between 12 and 14, stirring and heating to 120-150 ℃, and reacting for 1-6 hours; printing or spin-coating the reacted platinum nanowire on the hole injection layer, and drying at 80-150 ℃ for a period of time10-30 minutes.
In another preferred embodiment, the transparent electrode type comprises ITO (indium tin oxide In) 2 O 3 :Sn)、FTO(SnO 2 F), AZO (ZnO: Al), etc.; the electrode can be prepared on the hole injection layer by adopting an evaporation and sputtering mode.
In a preferred embodiment, the hole injection layer is coated with a material incorporating a polymeric crosslinker, including polyethylene glycol, polypropylene glycol, trimethylolpropane, trimethylolethane, and the like, onto the hole transport layer.
The invention relates to a preparation method of a quantum dot display of a streaming media rearview mirror, which comprises the following steps:
(1) forming a dense metal electrode on a glass, silicon wafer, quartz or flexible substrate: evaporating metal target materials such as gold, silver, platinum and aluminum on glass, silicon wafers, quartz and flexible substrates;
(2) preparing electron transport layer on the metal electrode, and adding ZnO or TiO 2 Or ZnO and MgO particles are prepared into a solution with the concentration of 20-50mg/mL, the spin coating speed is 1000-5000rpm/min, the time is 30-40 seconds, the drying temperature is 100-200 ℃, and the sintering is carried out for 10-30 minutes in a nitrogen environment, and the sintering temperature is 100-200 ℃;
(3) adding 1-10nm MgO or SnO 2 Spin coating on the electron transport layer as a nano barrier layer, and sintering for 10-30 minutes in a nitrogen environment at a sintering temperature of 100 ℃ and 200 ℃ and a film thickness of 10-20 nm;
(4) coating blue light quantum dots to a concentration of 20-50mg/mL, spinning on the nano barrier layer, and sintering for 10-30 minutes in a nitrogen environment at a sintering temperature of 100-;
or coating the green light quantum dots to the concentration of 20-50mg/mL, screwing the green light quantum dots on the nano barrier layer, and sintering the green light quantum dots for 10-30 minutes in a nitrogen environment at the sintering temperature of 100-200 ℃;
or coating the red light quantum dots to a concentration of 20-50mg/mL, spinning on the nano barrier layer, and sintering for 10-30 minutes in a nitrogen environment at a sintering temperature of 100-200 ℃;
(5) coating the hole transport layer on the quantum dot layer, and sintering for 10-30 minutes in a nitrogen environment at a sintering temperature of 100-;
(6) coating the hole injection layer material doped with the polymer cross-linking agent on the hole injection layer, and sintering for 10-30 minutes in a nitrogen environment at the sintering temperature of 100-200 ℃; the crosslinking agent includes polyethylene glycol, polypropylene glycol, trimethylolpropane, trimethylolethane, etc.
(7) Silver, gold or platinum nanowire solutions are spray printed on the hole injection layer, and due to the coffee ring effect, the droplets form metal rings with the diameter of about 150nm and the width of less than 10nm after being dried. The metal rings are overlapped with each other after repeated printing, so that a conductive coating layer with light transmittance is formed on the surface>70 percent; or ITO (indium tin oxide In) 2 O:Sn)、FTO(SnO 2 F) and AZO (ZnO: Al) films are prepared on the hole injection layer by adopting a sputtering method.
Has the advantages that: the invention adopts the inversion quantum dot display as the flow media rearview mirror, the display device can be manufactured on the basis of the metal electrode substrate, light is emitted from the top transparent electrode, the metal electrode not only serves as an anode, but also can be integrated with an image driving circuit and a transmission circuit of video signals and photosensitive signals. In addition, when the flow media rearview mirror is lightened, the reflection effect of light is increased, and the display brightness is improved; when the streaming media rearview mirror is not lightened, the mirror can be directly used as a reflecting mirror without independently adding the reflecting mirror, so that the structure of the streaming media rearview mirror system is greatly simplified. Aiming at the problem of low efficiency of the inversion type quantum dot device, the device is prepared by adopting a full wet method, and the polymer cross-linking agent is added into the hole injection layer, so that the problem of poor wettability of an upper layer solution and a lower layer film in the inversion type device is solved, and the film forming quality after spin coating is improved; the electron blocking layer is added to balance the injection of electrons and holes in the quantum dot light-emitting diode, so that the purpose of improving the performance of the device is achieved. Meanwhile, as the cathode of the device adopts a transparent electrode and the anode adopts a metal electrode, when the device does not work, the metal electrode with high reflectivity can be used as a mirror surface; when the device works, the back image is displayed, the metal electrode can enhance the display effect and increase the observable display visual angle.
Drawings
Fig. 1 is a schematic structural diagram of a quantum dot display for a streaming media rearview mirror, wherein: 1-substrate 12-metal 2 layer, 3-electron transport layer, 4-nano barrier layer, 5-quantum dot layer, 6-hole transport layer, 7-hole injection layer and 8-transparent electrode.
Fig. 2 is a diagram of a quantum dot display for a streaming media rearview mirror when the quantum dot display is not in operation (a) and in operation (b).
Fig. 3 is an EL spectrum of a device schematically illustrating a structure of a quantum dot display of a streaming media rearview mirror in embodiment 1 of the present invention, where the voltage test range is 2-6V, the turn-on voltage is 2V, and the light emission color is red; the luminous brightness is more than 5000cd/m 2 The device efficiency is greater than 6 cd/A.
Detailed Description
The quantum dot display for the streaming media rearview mirror disclosed by the embodiment of the invention comprises a substrate 1, and a metal layer 2, an electron transport layer 3, a nano barrier layer 4, a quantum dot layer 5, a hole transport layer 6, a hole injection layer 7 and a transparent electrode 8 which are sequentially formed on the substrate 1 as shown in figure 1. Wherein: the electron transport layer 3 has a thickness of 50-60nm, and may be ZnO or TiO 2 ZnO, MgO, etc.; the barrier layer 4 can adopt nano MgO or SnO 2 The thickness is 10-20 nm; the quantum dot layer 5 is 30nm thick, and can adopt a core-shell structure, wherein the core is one or more of cadmium sulfide, cadmium selenide, lead sulfide and lead selenide, and the shell is one of zinc sulfide and zinc selenide; the hole transport layer 6 is 30-40nm thick and may be prepared from organic Polyvinylcarbazole (PVK), TFB poly [ (9, 9-di-N-octylfluorenyl-2, 7-diyl) -alt- (4,4' - (N- (4-N-butyl) phenyl) -diphenylamine)]Etc.; the inorganic materials of the hole injection layer 7 include: MoO x 、WO x NiO, CuO and the like, organic materials such as poly (3, 4-ethylenedioxythiophene) -polystyrene sulfonic acid PEDOT, PSS and the like can be adopted, and a hole injection layer is 10-20 nm; the transparent conductive electrode 8 may be made of ITO (indium tin oxide In) 2 O 3 :Sn)、FTO(SnO 2 F), AZO (ZnO: Al), Ag, Au, Pt conductive film.
FIG. 2 is a real object diagram of a quantum dot display device of a streaming media rearview mirror, wherein the device keeps stable light color when the driving voltage is more than 2V, and the light color is red; luminous brightThe degree is more than 5000cd/m 2 The device efficiency is greater than 6 cd/A.
The embodiment of the invention discloses a preparation method of the quantum dot display for the streaming media rearview mirror, which comprises the following steps:
(1) metal targets, such as gold, silver, platinum, and aluminum, are deposited on glass, silicon wafers, quartz, and flexible substrates.
(2) Preparing electron transport layer on the metal electrode, and adding ZnO or TiO 2 Or ZnO and MgO particles are prepared into a solution with the concentration of 20-50mg/mL, the spin coating speed is 1000-5000rpm/min, the time is 30-40 seconds, the drying temperature is 100-200 ℃, and the sintering is carried out for 10-30 minutes in a nitrogen environment, and the sintering temperature is 100-200 ℃;
(3) spin-coating MgO with the thickness of 1-10nm as a nano barrier layer on the electron transport layer, and sintering for 10-30 minutes in a nitrogen environment at the sintering temperature of 100 ℃ and 200 ℃ and the thickness of 10-20 nm;
(4) coating blue light quantum dots to a concentration of 20-50mg/mL, spinning on the nano barrier layer, and sintering for 10-30 minutes in a nitrogen environment at a sintering temperature of 100-;
or coating green light quantum dots with the concentration of 20-50mg/mL, spinning on the nano barrier layer, and sintering for 10-30 minutes in a nitrogen environment at the sintering temperature of 100-200 ℃;
or coating the red light quantum dots to the concentration of 20-50mg/mL, screwing the red light quantum dots on the nano barrier layer, and sintering the red light quantum dots for 10-30 minutes in a nitrogen environment at the sintering temperature of 100-200 ℃;
(5) coating the hole transport layer on the quantum dot layer, and sintering for 10-30 minutes in a nitrogen environment at a sintering temperature of 100-;
(6) coating a hole injection layer material doped with a polymer cross-linking agent on the hole transport layer, and sintering for 10-30 minutes in a nitrogen environment at 100-200 ℃, wherein the cross-linking agent comprises polyethylene glycol, polypropylene glycol, trimethylolpropane, trimethylolethane and the like;
(7) silver, gold or platinum nanowire solutions are spray printed on the hole injection layer, and due to the coffee ring effect, the droplets form metal rings with the diameter of about 150nm and the width of less than 10nm after being dried. Repeated printing of metal ringsWill overlap each other to form a conductive coating on the surface and light transmission>70 percent; or ITO (indium tin oxide In) 2 O:Sn)、FTO(SnO 2 F) and AZO (ZnO: Al) films are prepared on the hole injection layer by adopting a sputtering method.
The following are specific examples, in which the materials of the existing structures of the hole injection layer, the hole transport layer, the blue/green/red quantum dots and the electron transport layer are the same, but the scheme of the invention is not limited to these materials, and other materials which can be adopted by the existing structures can also achieve similar performance. Are not listed and described in detail herein. In the following examples, the hole injection layer is 10nm thick, the hole transport layer is 30nm thick, the electron transport layer is 50nm thick, the nano-barrier layer is 10nm thick, the quantum dot light-emitting layer is 30nm thick, and the transparent electrode is 20nm thick.
Example 1:
(1) a metal target material, such as aluminum, is deposited on a glass substrate to a thickness of 200 nm.
(2) Preparing electron transport layer on the metal electrode, and adding ZnO or TiO 2 Or ZnO and MgO particles are prepared into 50mg/mL solution, the spin coating speed is 1000rpm/min, the time is 30 seconds, the drying temperature is 200 ℃, and the sintering is carried out for 30 minutes in a nitrogen environment, and the sintering temperature is 200 ℃;
(3) spin coating nanometer magnesium oxide as an electron blocking layer on the electron transmission layer, wherein the thickness of the nanometer magnesium oxide is 10 nm;
(4) coating blue light quantum dots to a concentration of 50mg/mL, screwing the blue light quantum dots on the nano barrier layer, and sintering for 30 minutes in a nitrogen environment at a sintering temperature of 200 ℃;
(5) coating the hole transport layer on the quantum dot layer, and sintering for 30 minutes in a nitrogen environment at the sintering temperature of 200 ℃;
(6) coating a hole injection layer material doped with polymer cross-linking agent polyethylene glycol on the quantum dot layer, and sintering for 30 minutes in a nitrogen environment at the sintering temperature of 200 ℃;
(7) the silver nanowire solution is sprayed and printed on the hole injection layer, and due to the coffee ring effect, the droplets form silver rings with the diameter of about 150nm and the width of less than 10nm after being dried. After repeated printing, the silver rings are overlapped with each other, so that a conductive coating layer with the light transmittance of more than 70 percent is formed on the surface.
Example 2:
(1) aluminum was deposited on the silicon substrate to a thickness of 200 nm.
(2) Preparing an electron transport layer on a metal electrode, preparing ZnO and MgO particles into a 50mg/mL solution, spin-coating at a speed of 1000rpm/min for 40 seconds and a drying temperature of 200 ℃, and sintering for 30 minutes in a nitrogen environment at a sintering temperature of 200 ℃;
(3) spin coating nanometer magnesium oxide as an electron blocking layer on the electron transmission layer, wherein the thickness of the nanometer magnesium oxide is 10 nm;
(4) coating green light quantum dots to a concentration of 20mg/mL, spinning the green light quantum dots on the nano barrier layer, and sintering the green light quantum dots for 30 minutes in a nitrogen environment at a sintering temperature of 200 ℃;
(5) coating the hole transport layer on the quantum dot layer, and sintering for 30 minutes in a nitrogen environment at the sintering temperature of 200 ℃;
(6) coating a hole injection layer material doped with a polymer cross-linking agent polypropylene glycol on the quantum dot layer, and sintering for 30 minutes in a nitrogen environment at the sintering temperature of 200 ℃;
(7) ITO (indium tin oxide In) 2 Sn) film is prepared on the hole injection layer by adopting a sputtering method.
Example 3:
(1) aluminum was deposited on the glass substrate to a thickness of 200 nm.
(2) Preparing an electron transport layer on the metal electrode, and adding TiO 2 Preparing the particles into a solution of 30mg/mL, spin-coating at a speed of 3000rpm/min for 40 seconds, drying at a temperature of 200 ℃, and sintering for 30 minutes in a nitrogen environment at a sintering temperature of 200 ℃;
(3) spin coating nanometer magnesium oxide as an electron blocking layer on the electron transmission layer, wherein the thickness of the nanometer magnesium oxide is 10 nm;
(4) coating red light quantum dots to a concentration of 40mg/mL, spinning the red light quantum dots on the nano barrier layer, and sintering the red light quantum dots for 10 minutes in a nitrogen environment at a sintering temperature of 100 ℃;
(5) coating the hole transport layer on the quantum dot layer, and sintering for 30 minutes in a nitrogen environment at the sintering temperature of 200 ℃;
(6) coating a hole injection layer material doped with polymer cross-linking agent trimethylolpropane on the quantum dot layer, and sintering for 30 minutes in a nitrogen environment at the sintering temperature of 200 ℃;
(7)FTO(SnO 2 f) or AZO (ZnO: Al) film is prepared on the hole injection layer by adopting a sputtering method.

Claims (4)

1. The quantum dot display for the streaming media rearview mirror is characterized in that the display for the streaming media rearview mirror adopts an inverted quantum dot display, and the quantum dot display comprises a substrate, and a metal layer, an electron transport layer, a nano barrier layer, a quantum dot layer, a hole transport layer, a hole injection layer and a transparent electrode which are sequentially formed on the substrate; the quantum dot display is directly used as a reflector when not lighted, and the reflector does not need to be added independently; the quantum dot display is prepared according to the following method:
(1) forming a dense metal electrode on a glass, silicon wafer, quartz or flexible substrate: evaporating a metal target material comprising gold, silver, platinum or aluminum on a glass, a silicon wafer, quartz or a flexible substrate;
(2) preparing an electron transport layer on the metal electrode: adding ZnO or TiO 2 Or ZnO and MgO particles are prepared into a solution with the concentration of 20-50mg/mL, the spin coating speed is 1000-5000rpm/min, the time is 30-40 seconds, the drying temperature is 100-200 ℃, and the sintering is carried out for 10-30 minutes in a nitrogen environment, and the sintering temperature is 100-200 ℃;
(3) mixing nano magnesium oxide (MgO) or tin oxide (SnO) 2 ) The particles are taken as a nano barrier layer and are coated on the electron transmission layer in a spin mode, the particle size is 1-10nm, and the thickness is 10-20 nm;
(4) coating blue light quantum dots with the concentration of 20-50mg/mL, screwing the blue light quantum dots on the nano barrier layer, and sintering the blue light quantum dots for 10-30 minutes in a nitrogen environment at the sintering temperature of 100-200 ℃;
or coating green light quantum dots with the concentration of 20-50mg/mL, spinning on the nano barrier layer, and sintering for 10-30 minutes in a nitrogen environment at the sintering temperature of 100-200 ℃;
or coating the red light quantum dots to a concentration of 20-50mg/mL, spinning on the nano barrier layer, and sintering for 10-30 minutes in a nitrogen environment at a sintering temperature of 100-200 ℃;
(5) coating the hole transport layer on the quantum dot layer, and sintering for 10-30 minutes in a nitrogen environment at the sintering temperature of 100-200 ℃;
(6) coating a hole injection layer material doped with a polymer cross-linking agent on the hole transport layer, and sintering for 10-30 minutes in a nitrogen environment at the sintering temperature of 100-200 ℃; the crosslinking agent comprises polyethylene glycol, polypropylene glycol, trimethylolpropane or trimethylolethane;
(7) spraying and printing silver or gold or platinum nanowire solution on the hole injection layer, or ITO (indium tin oxide In) 2 O 3 :Sn)、FTO(SnO 2 F) or AZO (ZnO: Al) film is prepared on the hole injection layer by adopting a sputtering method.
2. The quantum dot display for the streaming media rearview mirror as claimed in claim 1, wherein the transparent electrode is composed of metal nanowires, and the preparation method of the quantum dot display is that nano silver, gold or platinum nanowire solution is respectively sprayed and printed on the hole injection layer to form a conductive coating; the light transmission of the formed coating is > 70%.
3. The quantum dot display device of claim 2, wherein the platinum nanowire solution is prepared by preparing metal nanowires from a noble metal precursor solution and adopting chloroplatinic acid H 2 PtCl 6 Dissolving in ethylene glycol EG to form 0.1-1mg/mL solution, adding a certain amount of NaOH/EG solution to adjust the pH value of the solution to be between 12 and 14, stirring and heating to 120-150 ℃, and reacting for 1-6 hours; and printing or spin-coating the reacted platinum nanowires on the hole injection layer, and drying at 80-150 ℃ for 10-30 minutes.
4. The quantum dot display for the rearview mirror of streaming media as claimed in claim 2, wherein the gold nanowire solution is prepared by mixing 0.01-1% by mass of aurum perchlorate HAuCl 4 Adding sodium citrate with the mass fraction of 0.1-1% into the aqueous solution, heating to boil, and reacting for 1-10 minutes to generate gold nano-wires; and spin-coating or printing the gold nanowires on the hole injection layer, and drying at 80-150 ℃ for 10-30 minutes.
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