CN111193184A - Ultra-narrow band ultra-thin reflecting film plated on cavity surface of semiconductor laser and used for mode selection - Google Patents
Ultra-narrow band ultra-thin reflecting film plated on cavity surface of semiconductor laser and used for mode selection Download PDFInfo
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- CN111193184A CN111193184A CN201911393241.6A CN201911393241A CN111193184A CN 111193184 A CN111193184 A CN 111193184A CN 201911393241 A CN201911393241 A CN 201911393241A CN 111193184 A CN111193184 A CN 111193184A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 239000010408 film Substances 0.000 claims description 61
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 14
- 238000000576 coating method Methods 0.000 claims description 14
- 238000001704 evaporation Methods 0.000 claims description 12
- 230000008020 evaporation Effects 0.000 claims description 12
- 230000004913 activation Effects 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 229910018487 Ni—Cr Inorganic materials 0.000 claims description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052990 silicon hydride Inorganic materials 0.000 claims description 2
- 230000006698 induction Effects 0.000 abstract description 8
- 238000001914 filtration Methods 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 230000005284 excitation Effects 0.000 abstract description 2
- 238000004806 packaging method and process Methods 0.000 abstract description 2
- 238000003776 cleavage reaction Methods 0.000 abstract 1
- 238000007747 plating Methods 0.000 abstract 1
- 230000007017 scission Effects 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses an ultra-narrow band ultra-thin reflecting film plated on the cavity surface of a semiconductor laser for mode selection, which comprises a bar, wherein an active region is arranged in the middle of the bar, one surface of the active region contains the ultra-narrow band ultra-thin reflecting film, the ultra-narrow band reflecting film consists of an induction layer, an ultra-thin light filtering film and a high reflecting film, and the other surface is a conventional partial reflecting output surface and can be a non-film-coated cleavage surface or a film-coated partial reflecting film. The ultra-narrow band ultrathin reflecting film is plated on the cavity surface of the semiconductor laser and used for selecting the mode, the ultra-narrow band reflecting mirror is arranged on one side of the excitation area to select the mode, compared with the traditional grating, the cost is low, the occupied space is small, compared with the traditional PE cavity film selection, the bandwidth is narrow, the transmission distance is long, compared with the conventional ultra-narrow band reflecting mirror, the film plating cost is low, the efficiency is high, and the packaging is convenient.
Description
Technical Field
The invention belongs to the technical field of reflecting films, and particularly relates to an ultra-narrow band ultrathin reflecting film plated on a cavity surface of a semiconductor laser and used for mode selection.
Background
The mode selection technology output by the laser is divided into two parts, one part is selection of a longitudinal laser mode, and the other part is selection of a transverse laser mode, wherein the former has a large influence on the output frequency of the laser, can greatly improve the coherence of the laser, and is often called as the frequency selection technology of the laser; the latter mainly influences the light intensity uniformity of laser output and improves the brightness of laser. Most lasers use a long laser resonator to obtain a large output energy, which makes the output of the laser multimode, however, the fundamental transverse mode has the characteristics of high brightness, small divergence angle, uniform radial light intensity distribution, single oscillation frequency, and optimal temporal and spatial coherence compared with the high-order mode.
The prior art typically selects a mode using FP cavities or gratings. The FP cavity is low in mode selection cost, large in line width, poor in side mode suppression ratio, few in application, narrow in grating mode selection line width, wide in application and high in cost, the ultra-narrow band reflector is used for mode selection, the cost is low, the coating cost of the conventional ultra-narrow band reflector is high, and the far loss of the reflecting surface from the cavity surface is large due to the thick film layer.
Disclosure of Invention
(1) Technical scheme
In order to overcome the defects of the prior art, the invention provides an ultra-narrow band ultrathin reflective film plated on the cavity surface of a semiconductor laser for mode selection, which comprises a bar (1), wherein the ultra-narrow band ultrathin reflective film comprises a metal induction film (2), a narrow band light filtering film (3), a high reflection film (4) and a coupling part reflective film (6), an activation region (5) is arranged in the middle of the bar (1), the ultra-narrow band ultrathin reflective film system structure sequentially comprises the metal induction film (2), the narrow band light filtering film (3) and the high reflection film (4) from the position close to the activation region (5), the full width at half maximum of the peak wavelength of the ultra-narrow band ultrathin reflectivity is less than 2nm, and the other end surface of the activation region (5) is the coupling part reflective film (6).
Further, the high-low refractive index ratio of the narrow-band filter film (3) is more than 2.
Furthermore, the high refractive index thin film material of the narrow band filter film (3) is silicon or silicon hydride, the low refractive index thin film material is silicon oxide, the physical thickness of the thin film material of the narrow band filter film (3) is less than or equal to 4um, and the metal induction film (2) comprises a chromium metal induction film, a nickel metal induction film or a nickel-chromium mixed metal induction film.
Furthermore, the ultra-narrow band ultrathin reflecting film plated on the cavity surface of the semiconductor laser for mode selection is realized by electron gun evaporation, and charged ion assisted electron gun evaporation, magnetron sputtering evaporation and ion sputtering evaporation.
Furthermore, the ultra-narrow band ultra-thin reflecting film is suitable for laser with the central wavelength of 1.2-1.65 um.
(2) Advantageous effects
The invention has the beneficial effects that: the ultra-narrow band reflector is arranged on one side of the excitation area to select the mode, compared with the traditional grating and PE cavity film selection, the cost is low, the occupied space is small, compared with the conventional ultra-narrow band reflector, the film coating cost is low, and the packaging is convenient; the film system of the ultra-narrow band ultra-thin reflecting film comprises a metal induction layer, can generate a small amount of absorption, is about 3-5%, can only be used for low power, is less than 30 milliwatts, and can meet medium-distance transmission.
Drawings
FIG. 1 is a schematic front view of the present invention;
FIG. 2 is a schematic spectral diagram of the structure of the present invention;
FIG. 3 is a schematic diagram of a design curve of a reflective film according to the present invention;
FIG. 4 is a schematic test spectrum of a first test sample of the present invention;
FIG. 5 is a diagram showing a test spectrum of a second test sample of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention are further clearly and completely described below with reference to the embodiments, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
Example one
The embodiment provides a plate ultra-narrow band ultra-thin reflective film who is used for mode selection at semiconductor laser cavity face, including bar 1, ultra-narrow band ultra-thin reflective film contains metal induced film 2, narrowband filter coating 3, high anti-membrane 4 and coupling part reflectance coating 6, the centre of bar 1 is activation region 5, ultra-narrow band ultra-thin reflective film membrane system structure is followed to be close to activation region 5 is in proper order metal induced film 2, narrowband filter coating 3 high anti-membrane 4, the full width at half maximum of ultra-narrow band ultra-thin reflectance peak wavelength be less than 2nm, another terminal surface of activation region 5 is coupling part reflectance coating 6.
In this embodiment, the thin film material of the narrowband filter 3 is silicon and silicon oxide, the refractive index of silicon 3.509 is 1310nm at the design wavelength band, the refractive index of silicon oxide is 1.453, the refractive index ratio of silicon/silicon oxide is greater than 2, the physical thickness of the thin film material of the narrowband filter 3 is less than or equal to 4um, and the metal-induced film 2 is a chromium metal-induced film.
Specifically, the film system structure of the present embodiment is: a is Al2O3，L: SiO2，H:Ta2O5，SI: Si，CR：Cr
Sub (end bar)
A 30.00nm
H 258.69nm
CR 19.47nm
L 217.53nm
SI 93.38nm
L 225.42nm
SI 93.37nm
L 895.84nm
SI 93.37nm
L 225.42nm
SI 93.37nm
L 360.53nm
SI 93.37nm
L 225.42nm
SI 93.37nm
L 225.42nm
SI 93.37nm
L 100nm
Air (Air)
When the device is used specifically, the bar 1 is placed in a coating clamp to enable the upper electrode surface and the lower electrode surface to be close to each other, only the cavity surface is exposed, the device is placed in a vacuum coating machine, and test samples 1 are sequentially coated according to the structure of a film system: the substrate/chromium metal induced film/narrow band light filter film/high reflection film, the test sample 2 was plated in sequence according to the film system structure: substrate/nickel metal induced film/narrow band filter film/high reflective film. The thickness of the chromium metal induced film is monitored by a quartz crystal oscillation frequency mode, the thickness of the dielectric film is monitored by a quartz crystal oscillation frequency mode or an optical thickness mode, and the SiO layer on the outermost layer2Is a passivation layer. The coating is plated on the cavity surface of the semiconductor laser for selecting the modeThe ultra-narrow band ultra-thin reflecting film is realized by electron gun evaporation, and the evaporation of electron gun is assisted to the charged ion, magnetron sputtering evaporation, ion sputtering evaporation, and the laser that ultra-narrow band ultra-thin reflecting film suitable for central wavelength is in the wave band between 1.2~1.65 um.
The above examples are merely representative of preferred embodiments of the present invention, and the description thereof is more specific and detailed, but not to be construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, various changes, modifications and substitutions can be made without departing from the spirit of the present invention, and these are all within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (5)
1. The utility model provides a plate ultra-narrow band ultra-thin reflectance coating that is used for mode selection at semiconductor laser cavity face, includes bar (1), characterized in that, ultra-narrow band ultra-thin reflectance coating contains metal induced film (2), narrowband filter coating (3), high anti-membrane (4) and coupling part reflectance coating (6), the centre of bar (1) is activation region (5), ultra-narrow band ultra-thin reflectance coating membrane system structure is followed to be close to activation region (5) is in proper order metal induced film (2), narrowband filter coating (3), high anti-membrane (4), the full width at half maximum of ultra-narrow band ultra-thin reflectance peak wavelength be less than 2nm, another terminal surface of activation region (5) is coupling part reflectance coating (6).
2. The ultra-narrow band ultra-thin reflective film plated on the cavity surface of a semiconductor laser for mode selection according to claim 1, wherein the ratio of high refractive index to low refractive index of the narrow band filter film (3) is greater than 2.
3. The ultra-narrow band ultra-thin reflective film plated on the cavity surface of a semiconductor laser for mode selection according to claim 2, wherein the thin film material of the narrow band filter (3) is silicon and silicon hydride, and the physical thickness of the thin film material of the narrow band filter (3) is less than or equal to 4um, and the metal-induced film (2) comprises a chromium metal-induced film, a nickel metal-induced film or a nickel-chromium mixed metal-induced film.
4. The ultra-narrow band ultra-thin reflective film plated on the cavity surface of a semiconductor laser for mode selection according to claim 1, wherein the ultra-narrow band ultra-thin reflective film plated on the cavity surface of a semiconductor laser for mode selection is realized by electron gun evaporation, charged ion assisted electron gun evaporation, magnetron sputtering evaporation, and ion sputtering evaporation.
5. The ultra-narrow band ultra-thin reflective film plated on the cavity surface of a semiconductor laser for mode selection according to claim 1, wherein the ultra-narrow band ultra-thin reflective film is suitable for laser with a central wavelength in a waveband of 1.2-1.65 um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911393241.6A CN111193184A (en) | 2019-12-30 | 2019-12-30 | Ultra-narrow band ultra-thin reflecting film plated on cavity surface of semiconductor laser and used for mode selection |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911393241.6A CN111193184A (en) | 2019-12-30 | 2019-12-30 | Ultra-narrow band ultra-thin reflecting film plated on cavity surface of semiconductor laser and used for mode selection |
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| CN111193184A true CN111193184A (en) | 2020-05-22 |
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| CN201911393241.6A Pending CN111193184A (en) | 2019-12-30 | 2019-12-30 | Ultra-narrow band ultra-thin reflecting film plated on cavity surface of semiconductor laser and used for mode selection |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117096723A (en) * | 2023-10-20 | 2023-11-21 | 度亘核芯光电技术(苏州)有限公司 | Passivation film structure, forming method and forming equipment |
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Application publication date: 20200522 |