CN111162188A - Thin film packaging structure, preparation method thereof and display panel - Google Patents
Thin film packaging structure, preparation method thereof and display panel Download PDFInfo
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- CN111162188A CN111162188A CN201811318854.9A CN201811318854A CN111162188A CN 111162188 A CN111162188 A CN 111162188A CN 201811318854 A CN201811318854 A CN 201811318854A CN 111162188 A CN111162188 A CN 111162188A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
- H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
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Abstract
The invention relates to a film packaging structure, a preparation method thereof and a display panel, wherein the preparation method comprises the following steps: sequentially forming a first inorganic packaging layer and an organic packaging layer on a device to be packaged, forming a first inorganic thin film on the organic packaging layer by adopting an atomic layer deposition method, and forming a second inorganic thin film on the first inorganic thin film by adopting a vapor deposition method to obtain a second inorganic packaging layer. According to the preparation method of the thin film packaging structure, a first inorganic thin film with a compact surface and a thin thickness is formed on one side of an organic packaging layer far away from a device to be packaged, so that the binding force between the first inorganic thin film and the organic packaging layer is improved; and then forming a second inorganic thin film with lower surface density and thicker thickness on the first inorganic thin film, so that the binding force between the inorganic packaging layer and the organic packaging layer is improved, the water and oxygen barrier performance of the thin film packaging structure is improved, and the packaging performance of the thin film packaging is further improved.
Description
Technical Field
The invention relates to the technical field of display, in particular to a thin film packaging structure, a preparation method thereof and a display panel.
Background
In the field of display technology, organic electroluminescent diodes (OLEDs) are recognized as a day-to-day star in the huge industrial market of display and illumination following current LEDs and LCDs due to their advantages of self-luminescence, low power consumption, fast response speed, wide viewing angle, high resolution, wide temperature range, high brightness, high contrast, good vibration resistance, ultra-thinness, etc., and can be fabricated into various flexible OLEDs, which have features and competitiveness in the fields of flexible display, illumination, etc.
The OLED device is very vulnerable to the intrusion of external water and oxygen gas in the air, which results in the performance of the OLED device being affected, so that the OLED device needs to be packaged after being completed. Thin film packaging is a packaging technology suitable for narrow-bezel and flexible OLED (organic Light-Emitting Diode) panels, and a typical thin film packaging structure is formed by overlapping and repeating an inorganic packaging layer and an organic packaging layer. Wherein, the inorganic packaging layer is a water oxygen barrier layer and mainly used for blocking water oxygen. The organic packaging layer is a planarization layer and mainly used for covering defects on the surface of the inorganic packaging layer, providing a flat surface for subsequent film formation, reducing the stress on the surface of the inorganic packaging layer and preventing the defects from expanding. The organic encapsulation layer is typically deposited on the surface of the inorganic encapsulation layer by means of ink-jet printing. However, the bonding force between the inorganic packaging layer and the organic packaging layer is limited due to the difference between the materials of the inorganic packaging layer and the organic packaging layer in the film packaging, so that the effect of blocking external moisture is affected, and the packaging performance is affected.
Disclosure of Invention
Accordingly, there is a need for a thin film encapsulation structure capable of improving encapsulation performance, a method for manufacturing the same, and a display panel.
A preparation method of a thin film packaging structure comprises the following steps:
forming a first inorganic packaging layer on a device to be packaged;
forming an organic encapsulation layer on the first inorganic encapsulation layer; and
and forming a first inorganic film on the organic packaging layer by adopting an atomic layer deposition method, and forming a second inorganic film on the first inorganic film by adopting a vapor deposition method to obtain a second inorganic packaging layer.
According to the preparation method of the thin film packaging structure, the atomic layer deposition method is adopted to form the first inorganic thin film with a compact surface and a thin thickness on one side of the organic packaging layer far away from the device to be packaged so as to improve the binding force between the first inorganic thin film and the organic packaging layer; and then, a second inorganic film with lower surface density and thicker thickness is formed on the first inorganic film by adopting a vapor deposition method, so that the binding force between the inorganic packaging layer and the organic packaging layer is improved, the water and oxygen barrier performance of the film packaging structure is improved, and the packaging performance of the film packaging is further improved.
In one embodiment, the step of forming a first inorganic encapsulation layer on the device to be encapsulated comprises:
and preparing a third inorganic film on the device to be packaged by adopting a vapor deposition method, and preparing a fourth inorganic film on the third inorganic film by adopting an atomic layer deposition method to obtain the first inorganic packaging layer.
In one embodiment, the first inorganic film is a silicon oxide film or an aluminum oxide film, and the second inorganic film is a silicon nitride film; and/or
The third inorganic film is a silicon nitride film, and the fourth inorganic film is a silicon oxide film or an aluminum oxide film.
A thin film packaging structure is used for packaging a device to be packaged and comprises at least two stacked inorganic packaging layers arranged on the device to be packaged and an organic packaging layer arranged between two adjacent inorganic packaging layers;
the inorganic packaging layer positioned on one side of the organic packaging layer far away from the device to be packaged comprises a first inorganic thin film in direct contact with the organic packaging layer and a second inorganic thin film arranged on the first inorganic thin film, and the density of the first inorganic thin film is greater than that of the second inorganic thin film.
According to the film packaging structure, a first inorganic film with a compact surface and a thin thickness is formed on one side of an organic packaging layer far away from a device to be packaged, so that the binding force between the first inorganic film and the organic packaging layer is improved; and then forming a second inorganic thin film with lower surface density and thicker thickness on the first inorganic thin film, so that the binding force between the inorganic packaging layer and the organic packaging layer is improved, the water and oxygen barrier performance of the thin film packaging structure is improved, and the packaging performance of the thin film packaging is further improved.
In one embodiment, the inorganic encapsulation layer on the side of the organic encapsulation layer close to the device to be encapsulated includes a third inorganic thin film disposed on the device to be encapsulated and a fourth inorganic thin film disposed between the third inorganic thin film and the organic encapsulation layer, and the density of the fourth inorganic thin film is greater than that of the third inorganic thin film.
In one embodiment, the first inorganic thin film is formed by atomic layer deposition, and the second inorganic thin film is formed by vapor deposition; and/or the third inorganic film is formed by vapor deposition, and the fourth inorganic film is formed by atomic layer deposition.
In one embodiment, the thickness of the first inorganic thin film is 15nm to 50nm, and the thickness of the second inorganic thin film is 500nm to 2000 nm; and/or
The thickness of the third inorganic film is 500 nm-2000 nm, and the thickness of the fourth inorganic film is 15 nm-50 nm.
In one embodiment, the first inorganic film is a silicon oxide film or an aluminum oxide film, and the second inorganic film is a silicon nitride film; and/or
The third inorganic film is a silicon nitride film, and the fourth inorganic film is a silicon oxide film or an aluminum oxide film.
In one embodiment, the chemical composition of the silicon oxide film is SiOXWherein X is greater than 2.
A display panel comprises an organic electroluminescent device and the film packaging structure, wherein the film packaging structure is formed on the organic electroluminescent device.
Drawings
Fig. 1 is a schematic structural diagram of a display panel according to an embodiment.
Detailed Description
In order that the invention may be more fully understood, a more particular description of the invention will now be rendered by reference to specific embodiments thereof that are illustrated in the appended drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
Referring to fig. 1, the present invention further provides a display panel 10 including an organic electroluminescent device 100 and a thin film encapsulation structure 200. The thin film encapsulation structure 200 is formed on the organic electroluminescent device 100.
The present invention provides the above-mentioned thin film encapsulation structure 200 and a method for manufacturing the same.
The thin film encapsulation structure 200 includes at least two stacked inorganic encapsulation layers disposed on the organic electroluminescent device 100 (i.e., the device to be encapsulated), where the two inorganic encapsulation layers are a first inorganic encapsulation layer 210 close to the organic electroluminescent device 100 and a second inorganic encapsulation layer 230 far from the organic electroluminescent device 100. The thin film encapsulation structure 200 further includes an organic encapsulation layer 220 disposed between the first inorganic encapsulation layer 210 and the second inorganic encapsulation layer 230 that are adjacently disposed.
Wherein the second inorganic encapsulation layer 230 on the side of the organic encapsulation layer 220 away from the organic electroluminescent device 100 comprises a first inorganic film 231 in direct contact with the organic encapsulation layer 220 and a second inorganic film 232 disposed on the first inorganic film 231. Specifically, the density of the first inorganic thin film 231 is greater than that of the second inorganic thin film 232, and the thickness of the first inorganic thin film 231 is less than that of the second inorganic thin film 232.
In the thin film encapsulation structure 200, the first inorganic thin film 231 with a relatively dense surface and a relatively thin thickness is formed on the organic encapsulation layer 220 at a side far away from the organic electroluminescent device 100, so as to improve the bonding force between the first inorganic thin film 231 and the organic encapsulation layer 220; then, a second inorganic film 232 with a lower surface density and a thicker thickness is formed on the first inorganic film 231, so that the bonding force between the second inorganic packaging layer 230 and the organic packaging layer 220 is improved, the water and oxygen barrier performance of the film packaging structure 200 is improved, and the packaging performance of the film packaging is further improved.
Further, the first inorganic encapsulation layer 210 located on the side of the organic encapsulation layer 220 close to the organic electroluminescent device 100 includes a third inorganic thin film 211 disposed on the organic electroluminescent device 100 and a fourth inorganic thin film 212 disposed between the third inorganic thin film 211 and the organic encapsulation layer 220. Specifically, the density of the fourth inorganic thin film 212 is greater than that of the third inorganic thin film 211, and the thickness of the fourth inorganic thin film 212 is smaller than that of the third inorganic thin film 211.
Thus, a thicker third inorganic thin film 211 with lower density is formed on the organic electroluminescent device 100, and a thinner fourth inorganic thin film 212 with higher density is formed on the third inorganic thin film 211, so that a better deposition surface with better density is provided for the subsequent formation of the organic packaging layer 220, the adhesive force between the organic packaging layer 220 and the first inorganic packaging layer 210 can be further improved, and the water and oxygen blocking performance of the organic electroluminescent device is improved; in addition, the fourth inorganic thin film 212 may also cover pinholes in the third inorganic thin film 211, thereby improving the water and oxygen barrier property of the first inorganic encapsulation layer 210 from various aspects.
The structure of the thin film encapsulation structure 200 will be described in further detail with reference to the method for manufacturing the thin film encapsulation structure 200. The preparation method comprises the following steps of S1-S3.
Step S1: a first inorganic encapsulation layer 210 is formed on the organic electroluminescent device 100.
Wherein the organic electroluminescent device 100 is a device to be encapsulated. It is understood that the organic electroluminescent device 100 may include an array substrate, a first electrode layer, an organic light emitting structure unit, a second electrode layer, and a light extraction layer sequentially disposed on the array substrate. Wherein the first electrode layer is an anode and the second electrode layer is a cathode. It is understood that in some embodiments, the light extraction layer may be omitted.
It can be understood that the array substrate includes a substrate and a TFT driving array disposed on the substrate, and is used for driving the light emitting device to realize image display. The substrate may be a flexible backplane. The light extraction layer is mainly used for a top-emission OLED device and mainly made of organic materials; the refractive index of the light extraction layer is preferably greater than 1.9 for improving light extraction efficiency. It is understood that the first inorganic encapsulation layer 210 is formed at one side of the light extraction layer.
In one embodiment, step S1 includes: the third inorganic thin film 211 (the first inorganic thin film 231 and the second inorganic thin film 232, see below) is prepared on the organic electroluminescent device 100 by a vapor deposition method, and the fourth inorganic thin film 212 is prepared on the third inorganic thin film 211 by an Atomic Layer Deposition (ALD) method.
Thus, a thicker third inorganic film 211 with lower density is deposited by a vapor deposition method, and then a thinner fourth inorganic film 212 with higher density is deposited by an atomic layer deposition method, so that a deposition surface with better density is provided for the subsequent formation of the organic packaging layer 220, the adhesive force between the organic packaging layer 220 and the first inorganic packaging layer 210 can be further improved, and the water and oxygen blocking performance of the organic packaging layer 220 and the first inorganic packaging layer 210 is improved; in addition, the fourth inorganic thin film 212 may also cover pinholes in the third inorganic thin film 211, thereby improving the water and oxygen barrier property of the first inorganic encapsulation layer 210 from various aspects.
It is understood that the vapor deposition process is a physical vapor deposition process or a chemical vapor deposition process. Preferably, the third inorganic thin film 211 is formed by CVD (Chemical Vapor Deposition); more preferably, it is formed by PECVD (Plasma Enhanced Chemical Vapor Deposition).
Materials commonly used to form inorganic encapsulation layers include silicon oxide, silicon nitride, and Al2O3Nitrides, non-metal oxides and metal oxides with water-oxygen barrier actionThe inorganic packaging film is made of a material, so that the inorganic packaging film has a good water and oxygen blocking effect.
Specifically, in one embodiment, the third inorganic film 211 is a silicon nitride film, and the fourth inorganic film 212 is a silicon oxide film or an aluminum oxide film. Therefore, the silicon nitride film with relatively good water and oxygen blocking performance, thicker thickness and lower density is arranged on the outer layer far away from the organic packaging layer 220, the silicon oxide or aluminum oxide film with relatively thinner thickness and higher density is arranged on the inner layer near the organic packaging layer 220, and the bonding force between the silicon oxide or aluminum oxide and the organic packaging layer 220 is superior to that between the silicon nitride and the organic packaging layer 220, so that the bonding force between the first inorganic packaging layer 210 and the organic packaging layer 220 is greatly improved, and the packaging reliability is further improved. Preferably, the fourth inorganic thin film 212 is in direct contact with the organic encapsulation layer 220, i.e., a thin silicon oxide thin film or aluminum oxide thin film is disposed between the organic encapsulation layer 220 and the silicon nitride thin film by an atomic layer deposition method.
Further, the third inorganic thin film 211 has a thickness of 500nm to 2000nm, and the fourth inorganic thin film 212 has a thickness of 15nm to 50 nm.
Preferably, the fourth inorganic film 212 is a silicon oxide film, such that SiNXAnd SiOXCan deposit in the same process cavity, thereby improving the production takt.
Further, the chemical composition of the silicon oxide film is SiOXWherein X is greater than 2. When the atomic layer deposition method is adopted to deposit the silicon oxide film, the volume ratio of the gas to the atomic layer deposition gas source can be adjusted to control the silicon-oxygen atomic ratio, and further the SiO can be changedXThereby further improving the lyophilic properties of the first inorganic encapsulation layer 210; the organic encapsulation layer 220 is generally deposited on the surface of the inorganic encapsulation layer by means of inkjet printing, so that the bonding force between the printing inks of the first inorganic encapsulation layer 210 and the organic encapsulation layer 220 can be improved, and the encapsulation reliability of the entire thin film encapsulation structure 200 can be finally improved.
Step S2: an organic encapsulation layer 220 is formed on the first inorganic encapsulation layer 210.
The organic encapsulation layer 220 is a planarization layer, and mainly serves to cover defects on the surface of the inorganic encapsulation layer, provide a flat surface for subsequent film formation, reduce stress on the surface of the inorganic encapsulation layer, and prevent defect propagation. The organic encapsulation layer 220 is typically deposited on the surface of the inorganic encapsulation layer by means of ink-jet printing. In addition, the organic encapsulation layer 220 also provides a certain flexibility to the thin film encapsulation structure 200.
In one embodiment, the material of the organic encapsulation layer 220 is at least one of polyvinyl alcohol, urethane acrylate polymer, polyimide resin, epoxy resin, and polymethyl methacrylate.
Step S3: a second inorganic encapsulation layer 230 is formed on the organic encapsulation layer 220. Wherein step S3 includes: the first inorganic film 231 is prepared on the organic encapsulation layer 220 by an atomic layer deposition method, and the second inorganic film 232 is prepared on the first inorganic film 231 by a vapor deposition method.
According to the preparation method of the thin film encapsulation structure 200, the first inorganic thin film 231 with a compact surface and a thin thickness is prepared on the organic encapsulation layer 220 by adopting an atomic layer deposition method, so that the bonding force between the first inorganic thin film 231 and the organic encapsulation layer 220 is improved; and then, depositing a second inorganic film 232 with lower density and thicker thickness by adopting a vapor deposition method, so that the binding force between the second inorganic packaging layer 230 and the organic packaging layer 220 is improved, the water and oxygen barrier performance of the film packaging structure 200 is improved, and the packaging performance of the film packaging is further improved.
Wherein the first inorganic film 231 is in direct contact with the organic encapsulation layer 220.
The display panel 10 adopts any one of the film packaging structures 200, so that the packaging reliability is better, and the luminous efficiency and the display life of the display panel 10 can be further improved.
Specifically, in one embodiment, the first inorganic film 231 is a silicon oxide film or an aluminum oxide film, and the second inorganic film 232 is a silicon nitride film. Therefore, the silicon nitride film with relatively good water and oxygen blocking performance, thicker thickness and lower density is arranged on the outer layer far away from the organic packaging layer 220, the silicon oxide or aluminum oxide film with lower thickness and higher density is arranged on the inner layer near the organic packaging layer 220, and the bonding force between the silicon oxide or aluminum oxide and the organic packaging layer 220 is superior to that between the silicon nitride and the organic packaging layer 220, so that the bonding force between the second inorganic packaging layer 230 and the organic packaging layer 220 is greatly improved, and the packaging reliability is improved.
Preferably, a thin silicon oxide film or aluminum oxide film is disposed between the two sides of the organic encapsulation layer 220 and the silicon nitride film by an atomic layer deposition method, so as to further improve the encapsulation reliability.
Further, the thickness of the first inorganic thin film 231 is 15nm to 50nm, and the thickness of the second inorganic thin film 232 is 500nm to 2000 nm.
Preferably, the first inorganic film 231 is a silicon oxide film, such that SiNXAnd SiOXCan deposit in the same process cavity, thereby improving the production takt.
Further, the chemical composition of the silicon oxide film is SiOXWherein X is greater than 2. When the atomic layer deposition method is adopted to deposit the silicon oxide film, the volume ratio of the gas to the atomic layer deposition gas source can be adjusted to control the silicon-oxygen atomic ratio, and further the SiO can be changedXThereby improving the lyophilic property of the second inorganic encapsulation layer 230; the organic encapsulation layer 220 is generally deposited on the surface of the inorganic encapsulation layer by means of inkjet printing, so that the bonding force between the printing inks of the second inorganic encapsulation layer 230 and the organic encapsulation layer 220 can be improved, and the encapsulation reliability of the entire thin film encapsulation structure 200 can be finally improved.
It is understood that the vapor deposition process is a physical vapor deposition process or a chemical vapor deposition process. Preferably, the second inorganic thin film 232 is formed by CVD (Chemical Vapor Deposition), and more preferably by PECVD (Plasma Enhanced Chemical Vapor Deposition).
It is understood that in other embodiments, the inorganic encapsulation layer may be three or more layers, and accordingly, the organic encapsulation layer may be two or more layers. That is, another organic encapsulation layer may be formed again on the second inorganic encapsulation layer 230, and then a fourth inorganic encapsulation layer may be formed on the organic encapsulation layer. It is understood that when there are a plurality of organic encapsulation layers, there may be more than one organic encapsulation layer and inorganic encapsulation layers adjacent thereto to form the above-described structure. Of course, all inorganic encapsulating layers adjacent to the encapsulating layer form the most preferred structure.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. The preparation method of the thin film packaging structure is characterized by comprising the following steps:
forming a first inorganic packaging layer on a device to be packaged;
forming an organic encapsulation layer on the first inorganic encapsulation layer; and
and forming a first inorganic film on the organic packaging layer by adopting an atomic layer deposition method, and forming a second inorganic film on the first inorganic film by adopting a vapor deposition method to obtain a second inorganic packaging layer.
2. The method of manufacturing of claim 1, wherein the step of forming a first inorganic encapsulation layer on the device to be encapsulated comprises:
and preparing a third inorganic film on the device to be packaged by adopting a vapor deposition method, and preparing a fourth inorganic film on the third inorganic film by adopting an atomic layer deposition method to obtain the first inorganic packaging layer.
3. The production method according to claim 1 or 2, wherein the first inorganic film is a silicon oxide film or an aluminum oxide film, and the second inorganic film is a silicon nitride film; and/or
The third inorganic film is a silicon nitride film, and the fourth inorganic film is a silicon oxide film or an aluminum oxide film.
4. A thin film packaging structure is used for packaging a device to be packaged and is characterized by comprising at least two stacked inorganic packaging layers arranged on the device to be packaged and an organic packaging layer arranged between two adjacent inorganic packaging layers;
the inorganic packaging layer positioned on one side of the organic packaging layer far away from the device to be packaged comprises a first inorganic thin film in direct contact with the organic packaging layer and a second inorganic thin film arranged on the first inorganic thin film, and the density of the first inorganic thin film is greater than that of the second inorganic thin film.
5. The thin film encapsulation structure according to claim 4, wherein the inorganic encapsulation layer on the side of the organic encapsulation layer close to the device to be encapsulated includes a third inorganic thin film disposed on the device to be encapsulated and a fourth inorganic thin film disposed between the third inorganic thin film and the organic encapsulation layer, and a density of the fourth inorganic thin film is greater than a density of the third inorganic thin film.
6. The thin film encapsulation structure according to claim 4 or 5, wherein the first inorganic thin film is formed by an atomic layer deposition method, and the second inorganic thin film is formed by a vapor deposition method; and/or
The third inorganic film is formed by vapor deposition, and the fourth inorganic film is formed by atomic layer deposition; and/or
The thickness of the first inorganic thin film is smaller than that of the second inorganic thin film; and/or
The thickness of the fourth inorganic thin film is smaller than that of the third inorganic thin film
7. The film encapsulation structure according to claim 4 or 5, wherein the first inorganic thin film has a thickness of 15nm to 50nm, and the second inorganic thin film has a thickness of 500nm to 2000 nm; and/or
The thickness of the third inorganic film is 500 nm-2000 nm, and the thickness of the fourth inorganic film is 15 nm-50 nm.
8. The film encapsulation structure according to claim 4 or 5, wherein the first inorganic film is a silicon oxide film or an aluminum oxide film, and the second inorganic film is a silicon nitride film; and/or
The third inorganic film is a silicon nitride film, and the fourth inorganic film is a silicon oxide film or an aluminum oxide film.
9. The thin film encapsulation structure of claim 8, wherein the chemical composition of the silicon oxide thin film is SiOXWherein X is greater than 2.
10. A display panel, which is characterized by comprising an organic electroluminescent device and a thin film packaging structure prepared by the preparation method of any one of claims 1 to 3 or the thin film packaging structure of any one of claims 4 to 9, wherein the thin film packaging structure is formed on the organic electroluminescent device.
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| CN201811318854.9A CN111162188A (en) | 2018-11-07 | 2018-11-07 | Thin film packaging structure, preparation method thereof and display panel |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113662292A (en) * | 2021-07-06 | 2021-11-19 | 上海海关工业品与原材料检测技术中心 | Washable electroluminescent garment |
| CN114171702A (en) * | 2021-12-03 | 2022-03-11 | 深圳市华星光电半导体显示技术有限公司 | OLED packaging structure and OLED packaging method |
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| CN104218181A (en) * | 2013-05-30 | 2014-12-17 | 海洋王照明科技股份有限公司 | A package substrate, the preparation manner and the application thereof |
| CN106299153A (en) * | 2016-10-10 | 2017-01-04 | 昆山工研院新型平板显示技术中心有限公司 | A kind of film encapsulation method and structure thereof |
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| US20020155729A1 (en) * | 2001-02-21 | 2002-10-24 | Lucent Technologies, Inc. | Semiconductor device encapsulation |
| CN104218181A (en) * | 2013-05-30 | 2014-12-17 | 海洋王照明科技股份有限公司 | A package substrate, the preparation manner and the application thereof |
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Application publication date: 20200515 |