CN111105996B

CN111105996B - Cleaning method and cleaning equipment for workpiece to be cleaned

Info

Publication number: CN111105996B
Application number: CN202010008946.8A
Authority: CN
Inventors: 夏余平; 宋冬门; 任德营; 顾立勋; 杨尊
Original assignee: Yangtze Memory Technologies Co Ltd
Current assignee: Yangtze Memory Technologies Co Ltd
Priority date: 2020-01-03
Filing date: 2020-01-03
Publication date: 2021-11-09
Anticipated expiration: 2040-01-03
Also published as: CN111105996A

Abstract

The application provides a cleaning method and cleaning equipment for a workpiece to be cleaned. The cleaning method comprises the following steps: providing a workpiece to be cleaned, wherein the workpiece to be cleaned comprises a base body and a first part to be cleaned, which is arranged on one side of the base body. And placing the workpiece to be cleaned into a first chemical cleaning solution and performing chemical cleaning to remove the first part to be cleaned, wherein the first chemical cleaning solution comprises an ozone solution. The ozone solution is a solution formed by dissolving ozone in water. And putting the workpiece to be cleaned into water for water washing to remove the first chemical cleaning liquid remained on the surface of the workpiece to be cleaned. This application is through adopting the ozone solution to replace the mixed solution of sulphuric acid and hydrogen peroxide among the correlation technique to treat the washing work piece and wash in order to get rid of the first portion of waiting to wash, has reduced the cleaning cost effectively, has improved the cleaning quality.

Description

Cleaning method and cleaning equipment for workpiece to be cleaned

Technical Field

The application belongs to the technical field of workpiece cleaning, and particularly relates to a cleaning method and cleaning equipment for a workpiece to be cleaned.

Background

In the process of manufacturing a wafer into a semiconductor, various patterns need to be prepared on the surface of the wafer, i.e. a photoetching process is carried out. Specifically, a photoresist layer is coated on the surface of the wafer, then various patterns are formed on the wafer through the cooperation of the mask plate and ultraviolet light, and finally the photoresist layer is removed. Currently, a mixed solution of sulfuric acid and hydrogen peroxide (SPM solution) is usually used to etch the photoresist layer. However, the SPM solution is expensive and requires a cleaning operation at a high temperature. However, hydrogen peroxide is easily decomposed at high temperature, thereby reducing the concentration of the SPM solution and reducing the cleaning quality.

Disclosure of Invention

In view of this, the present application provides in a first aspect a cleaning method of a workpiece to be cleaned, the cleaning method comprising:

providing a workpiece to be cleaned, wherein the workpiece to be cleaned comprises a base body and a first part to be cleaned, which is arranged on one side of the base body;

placing the workpiece to be cleaned into a first chemical cleaning solution and performing chemical cleaning to remove the first part to be cleaned, wherein the first chemical cleaning solution comprises an ozone solution; the ozone solution is formed by dissolving ozone in water; and

and putting the workpiece to be cleaned into water for water washing to remove the first chemical cleaning liquid remained on the surface of the workpiece to be cleaned.

According to the cleaning method provided by the first aspect of the application, the ozone solution is adopted to replace a mixed solution of sulfuric acid and hydrogen peroxide in the related art to clean the workpiece to be cleaned so as to remove the first part to be cleaned, so that the cleaning cost is effectively reduced, and the cleaning quality is improved.

Wherein the step of placing the workpiece to be cleaned in a first chemical cleaning solution and performing chemical cleaning comprises:

putting the workpiece to be cleaned into a first chemical cleaning solution;

and controlling the workpiece to be cleaned to reciprocate in the first chemical cleaning liquid.

Wherein the first chemical cleaning solution comprises a first horizontal plane, and after the step of placing the workpiece to be cleaned into the first chemical cleaning solution, the method further comprises the following steps:

and turning over the workpiece to be cleaned so that one side of the first part to be cleaned, which is far away from the base body, is far away from the first horizontal plane.

putting the workpiece to be cleaned into a first chemical cleaning solution;

increasing the temperature of the first chemical cleaning liquid to increase the temperature of the first chemical cleaning liquid from an initial temperature to a first preset temperature, and keeping the temperature for a first preset time; and

and increasing the temperature of the first chemical cleaning liquid again to increase the temperature of the first chemical cleaning liquid from the first preset temperature to a target temperature.

Wherein before "put the said work piece to be cleaned into the first chemical cleaning liquid and carry on the chemical cleaning", also include:

and placing the workpiece to be cleaned in an ozone atmosphere to remove part of the first part to be cleaned.

Wherein "placing the workpiece to be cleaned in an atmosphere of ozone" includes:

providing a closed first chemical cleaning tank, and placing the first chemical cleaning solution into the first chemical cleaning tank;

introducing ozone gas into the first chemical cleaning tank; and

and placing the workpiece to be cleaned into an ozone atmosphere in the first chemical cleaning tank.

controlling the workpiece to be cleaned to rotate along a first direction, wherein the first direction is parallel to the direction of the first part to be cleaned away from the surface of one side of the base body;

ozone gas is introduced in a direction parallel to the surface of one side of the first part to be cleaned, which is far away from the base body.

The workpiece to be cleaned further comprises a second part to be cleaned, the second part to be cleaned is arranged on one side, away from the base body, of the first part to be cleaned, and before the step of putting the workpiece to be cleaned into a first chemical cleaning solution and performing chemical cleaning, the method further comprises the following steps:

placing the workpiece to be cleaned into a second chemical cleaning solution for chemical cleaning so as to remove the second part to be cleaned;

the cleaning speed of the second chemical cleaning liquid is greater than that of the first chemical cleaning liquid; and

the cleaning precision of the second chemical cleaning liquid is smaller than that of the first chemical cleaning liquid.

Wherein, after the step of placing the workpiece to be cleaned into the second chemical cleaning solution for chemical cleaning, the method further comprises the following steps:

and putting the workpiece to be cleaned into water for water washing to remove the second chemical cleaning solution remained on the surface of the workpiece to be cleaned.

A second aspect of the present application provides a cleaning apparatus for a workpiece to be cleaned, the cleaning apparatus comprising:

a first chemical cleaning tank;

the first supply device is connected with the first chemical cleaning tank and is used for introducing a first chemical cleaning solution into the first chemical cleaning tank, the first chemical cleaning solution comprises an ozone solution, and the ozone solution is a solution formed by dissolving ozone in water;

a first rinsing bath; and

and the second supply device is connected with the first rinsing bath and is used for introducing water into the first rinsing bath.

The cleaning equipment provided by the second aspect of the application cleans the workpiece to be cleaned by utilizing the first supply device to introduce the ozone solution into the first chemical cleaning tank to replace the mixed solution of sulfuric acid and hydrogen peroxide in the related art, so as to remove the first part to be cleaned, effectively reduces the cleaning cost and improves the cleaning quality.

Wherein, the cleaning equipment still includes:

the clamping device is arranged in the first chemical cleaning tank and used for clamping a workpiece to be cleaned.

Wherein, the cleaning equipment still includes:

and the moving device is connected with the clamping device and is used for controlling the clamping device to reciprocate in the first chemical cleaning tank.

The first chemical cleaning tank comprises a bottom wall and a side wall connected with the periphery of the bottom wall in a bent mode, the clamping device is provided with a clamping face, and the clamping face is used for installing the workpiece to be cleaned; the cleaning apparatus further comprises:

the overturning device is connected with the clamping device and used for overturning the clamping device so that the clamping surface faces the bottom wall.

Wherein, the cleaning equipment still includes:

and the heating device is arranged in the first chemical cleaning tank and is used for heating the first chemical cleaning liquid in the first chemical cleaning tank.

Wherein, the cleaning equipment still includes:

and the third supply device is connected with the first chemical cleaning tank and is used for introducing ozone gas into the first chemical cleaning tank.

Wherein, the clamping device has the clamping face, the clamping face is used for installing treat the washing work piece, cleaning equipment still includes:

the rotating device is connected with the clamping device and is used for enabling the clamping device to rotate along the direction parallel to the clamping surface.

Wherein the third supply device is used for introducing ozone gas towards the direction parallel to the clamping surface.

Drawings

In order to more clearly explain the technical solution in the embodiments of the present application, the drawings that are required to be used in the embodiments of the present application will be described below.

Fig. 1 is a process flow diagram of a cleaning method according to an embodiment of the present disclosure.

FIG. 2 is a process flow diagram of one embodiment encompassed by S200 in FIG. 1.

Fig. 3 is a process flow diagram included after S210 in fig. 2.

Fig. 4 is a process flow diagram of another embodiment included in S200 of fig. 1.

FIG. 5 is a process flow diagram of one embodiment included in FIG. 1 prior to S200.

FIG. 6 is a process flow diagram of one embodiment encompassed by S190 of FIG. 5.

FIG. 7 is a process flow diagram of one embodiment encompassed by S190 of FIG. 5.

Fig. 8 is a process flow diagram of another embodiment included in fig. 1 prior to S200.

Fig. 9 is a process flow diagram included in fig. 8 after S180.

Fig. 10 is a schematic view of a cleaning apparatus for a workpiece to be cleaned according to a first embodiment of the present application.

Fig. 11 is a schematic view of a cleaning apparatus for a workpiece to be cleaned according to a second embodiment of the present application.

Fig. 12 is a schematic view of a cleaning apparatus for a workpiece to be cleaned according to a third embodiment of the present application.

Fig. 13 is a schematic view of a cleaning apparatus for a workpiece to be cleaned according to a fourth embodiment of the present application.

Fig. 14 is a schematic view of the inverted cleaning apparatus of fig. 13.

Fig. 15 is a schematic view of a cleaning apparatus for a workpiece to be cleaned according to a fifth embodiment of the present application.

Fig. 16 is a schematic view of a cleaning apparatus for a workpiece to be cleaned according to a sixth embodiment of the present application.

Fig. 17 is a schematic view of a cleaning apparatus for a workpiece to be cleaned according to a seventh embodiment of the present application.

Fig. 18 is a schematic view of a cleaning apparatus for a workpiece to be cleaned according to an eighth embodiment of the present application.

Description of the drawings:

the device comprises a cleaning device-1, a first chemical cleaning tank-10, a bottom wall-11, a side wall-12, a first supply device-20, a first water washing tank-30, a second supply device-40, a clamping device-50, a clamping surface-51, a connecting rod-52, a clamp-53, a moving device-60, a turning device-70, a heating device-80, a third supply device-90 and a rotating device-100.

Detailed Description

The following is a preferred embodiment of the present application, and it should be noted that, for those skilled in the art, several improvements and modifications can be made without departing from the principle of the present application, and these improvements and modifications are also considered as the protection scope of the present application.

Before the technical solutions of the present application are introduced, the technical problems in the related art will be described in detail.

In the process of manufacturing a wafer into a semiconductor, various patterns (circuit patterns, data patterns, etc.) need to be prepared on the surface of the wafer, i.e., a photolithography process is performed. Specifically, a photoresist layer is coated on the surface of the wafer, then various patterns are formed on the wafer through the cooperation of the mask plate and ultraviolet light, and finally the photoresist layer is removed. When removing the photoresist layer, an etching solution is usually used to remove the photoresist layer so as to completely expose the surface of the wafer for the subsequent processing. Currently, a mixed solution of sulfuric acid and hydrogen peroxide (SPM solution) is usually used to etch the photoresist layer. The working principle of the SPM solution is to dehydrate the photoresist layer and oxidize it into carbon dioxide and water by using a strong oxidizing substance (H2 SO5) formed by the coordination of sulfuric acid and hydrogen peroxide.

With the continuous development of the semiconductor industry, the semiconductor manufacturing process has entered into the nanometer era to adapt to the trend that each electronic product is smaller and the function is stronger. The stronger the chip function is, the smaller the device is, and the higher the technical requirements for various links in the process are. For example, as devices become smaller and smaller, the line widths in the chip become smaller and smaller, which leads to higher and higher requirements for particle control. When the line width is reduced, the existence of particles may cause the occurrence of a bridging phenomenon and even the damage of short circuit. Further, it is required to improve the quality of cleaning. At present, a single-chip cleaning method is usually adopted to replace multi-chip cleaning to avoid the problem of cross contamination caused by multi-chip cleaning, and a new solution needs to be replaced after each cleaning, which greatly increases the cleaning cost and the cleaning time. In addition, the SPM solution requires a cleaning operation at a high temperature (usually around 160 ℃). However, hydrogen peroxide is easily decomposed at high temperature, thereby reducing the concentration of the SPM solution and reducing the cleaning quality.

In view of this, the present application provides a method for cleaning a workpiece to be cleaned, which removes a first portion to be cleaned by cleaning the workpiece to be cleaned with an ozone solution instead of a mixed solution of sulfuric acid and hydrogen peroxide in the related art, thereby reducing the process cost and improving the cleaning quality.

Referring to fig. 1, fig. 1 is a process flow diagram of a cleaning method according to an embodiment of the present disclosure. The application relates to a cleaning method of a workpiece to be cleaned, which comprises S100, S200 and S300. The details of S100, S200, and S300 are as follows.

S100, providing a workpiece to be cleaned, wherein the workpiece to be cleaned comprises a base body and a first part to be cleaned, which is arranged on one side of the base body.

The workpiece to be cleaned is not limited to a wafer, a chip, etc., but may be an object of any shape, structure, and material. The workpiece to be cleaned comprises a base body and a first part to be cleaned, wherein the first part to be cleaned is arranged on one side of the base body. For example, when the workpiece to be cleaned is a wafer, the substrate is a wafer, and the first portion to be cleaned may be a photoresist layer formed on the surface of the wafer, the photoresist layer being a residue on the surface of the wafer after the wafer is subjected to a photolithography process. Of course, the first portion to be cleaned may be other substances remaining on the surface of the wafer.

S200, placing the workpiece to be cleaned into a first chemical cleaning solution, and chemically cleaning to remove the first part to be cleaned, wherein the first chemical cleaning solution comprises an ozone solution. The ozone solution is formed by dissolving ozone in water.

This application will wait to wash the work piece and put into first chemical cleaning liquid even wait to wash the work piece and immerse in first chemical cleaning liquid completely. The first chemical cleaning solution is a solution for cleaning the workpiece to be cleaned, and may also be understood as a solution for cleaning the workpiece to be cleaned by using a solvent in the first chemical cleaning solution. The first chemical cleaning liquid is used for removing the first part to be cleaned from the substrate so as to completely expose the surface of the substrate, and the substrate is convenient to carry out subsequent preparation processes. The first chemical cleaning liquid comprises an ozone solution, the ozone solution is formed by dissolving ozone in water, and the ozone solution can etch the first part to be cleaned by means of the oxidization of solute ozone so as to clean the first part to be cleaned. Optionally, the concentration of the ozone solution is 80-100 ppm. Further optionally, the concentration of the ozone solution is 85-95 ppm. The strong oxidizing property of the ozone solution is slightly weaker than that of the mixed solution of sulfuric acid and hydrogen peroxide, so that the cleaning method is more favorable for accurately controlling various parameters of cleaning. Secondly, the cost of the ozone solution is lower than that of the mixed solution of sulfuric acid and hydrogen peroxide, so that the cleaning cost can be reduced. In addition, the ozone solution reacts at normal temperature or slightly higher than the normal temperature, and the volatilization amount of the ozone is far less than that of the hydrogen peroxide at high temperature, so that the cleaning result can be more accurately controlled, and the cleaning quality is improved.

S300, putting the workpiece to be cleaned into water for water washing to remove the first chemical cleaning liquid remained on the surface of the workpiece to be cleaned.

This application still can put into the aquatic with getting rid of the first surface of waiting to wash behind the portion of waiting to wash, washes away the first chemical cleaning liquid of waiting to wash the work piece surface through water, improves the cleanliness of waiting to wash the work piece surface.

To sum up, the cleaning method provided by the application cleans the workpiece to be cleaned by adopting the ozone solution to replace the mixed solution of sulfuric acid and hydrogen peroxide in the related art so as to remove the first part to be cleaned, and can effectively reduce the cost of the first chemical cleaning solution and save the cleaning time because the ozone solution has lower cost and does not need to be heated to high temperature, thereby reducing the cleaning cost. In addition, because the ozone solution does not need to be heated to high temperature, the volatilization amount of the ozone solution is lower, the cleaning result can be more accurately controlled, and the cleaning quality is improved.

Referring to fig. 2, fig. 2 is a process flow diagram of an embodiment included in S200 of fig. 1. S200, placing the workpiece to be cleaned into a first chemical cleaning solution and carrying out chemical cleaning comprises S210 and S220. The details of S210 and S220 are as follows.

S210, placing the workpiece to be cleaned into a first chemical cleaning solution.

And S220, controlling the workpiece to be cleaned to reciprocate in the first chemical cleaning solution.

This application can be earlier in waiting to wash the work piece and put into first chemical cleaning liquid, make and wait to wash the work piece and soak completely in first chemical cleaning. Then, in the process of etching the first portion to be cleaned with the ozone solution, some first portion to be cleaned may remain on the surface of the substrate. At this moment, the steerable work piece of waiting to wash carries out reciprocating motion in the first chemical cleaning liquid to the first portion of waiting to wash that will remain on the base member surface shakes and falls, gets rid of the first portion of waiting to wash better, further improves cleaning quality. Optionally, one side of the first portion to be cleaned, which is away from the base body, is a surface to be cleaned, and the workpiece to be cleaned may be controlled to move in a direction parallel to the surface to be cleaned, or the workpiece to be cleaned may be controlled to move in a direction perpendicular to the surface to be cleaned.

Referring to fig. 3, fig. 3 is a process flow chart included after S210 in fig. 2. The first chemical cleaning solution includes a first horizontal surface, and after the step S210 of placing the workpiece to be cleaned in the first chemical cleaning solution, the step S211 is further included. The details of S211 are as follows.

S211, overturning the workpiece to be cleaned to enable one side, away from the base body, of the first part to be cleaned to be far away from the first horizontal plane.

From the above, the workpiece to be cleaned can be controlled to reciprocate in the first chemical cleaning solution, so that the first part to be cleaned remained on the surface of the base body is shaken off, the first part to be cleaned is better removed, and the cleaning quality is further improved. Alternatively, the workpiece to be cleaned may be turned over so that the side of the first portion to be cleaned facing away from the base body is away from the first horizontal plane, which may also be understood as a face to be cleaned of the workpiece to be cleaned being arranged facing downwards, so that when the first portion to be cleaned is separated from the base body surface or is formed by a thin first portion to be cleaned, the first portion to be cleaned may be separated from the base body surface due to the effect of gravity.

Referring to fig. 4, fig. 4 is a process flow diagram of another embodiment included in S200 of fig. 1. S200, placing the workpiece to be cleaned into a first chemical cleaning solution and carrying out chemical cleaning comprises S230, S240 and S250. The details of S230, S240, and S250 are as follows.

S230, placing the workpiece to be cleaned into a first chemical cleaning solution.

And S240, increasing the temperature of the first chemical cleaning liquid to increase the temperature of the first chemical cleaning liquid from the initial temperature to a first preset temperature, and keeping the temperature for a first preset time.

And S250, increasing the temperature of the first chemical cleaning liquid again to increase the temperature of the first chemical cleaning liquid from the first preset temperature to a target temperature.

This application will wait to wash the work piece and put into first chemical cleaning liquid and carry out the chemical cleaning and make, still can improve first chemical cleaning liquid's temperature to improve cleaning speed, reduce the scavenging period. In addition, in order to avoid raising the temperature to the target temperature in one step, the present application may employ a stepwise temperature rise, for example, the temperature of the first chemical cleaning solution may be raised from the initial temperature to a first preset temperature, and the temperature may be maintained for a first preset time. And increasing the temperature of the first chemical cleaning liquid again to increase the temperature of the first chemical cleaning liquid from the first preset temperature to a target temperature. Therefore, the ozone volatilization transition in the volatilization of the first chemical cleaning solution can be prevented. Alternatively, the initial temperature may be room temperature (e.g., 20-25 ℃), the first predetermined temperature may be 30-40 ℃, the first predetermined time may be 5-10min, and the target temperature is 50-60 ℃.

Referring also to fig. 5, fig. 5 is a process flow diagram of an embodiment included before S200 in fig. 1. Before S200 "put the workpiece to be cleaned into the first chemical cleaning solution and perform chemical cleaning", S190 is further included. The details of S190 are as follows.

S190, placing the workpiece to be cleaned in an ozone atmosphere to remove part of the first part to be cleaned.

From the above, the present application can clean the workpiece to be cleaned in the first chemical cleaning solution. Before the workpiece to be cleaned is put into the first chemical cleaning solution, the workpiece to be cleaned can be put into the ozone atmosphere for cleaning. The ozone atmosphere can be understood as ozone gas in a certain space, and when the workpiece is in such an environment, the cleaning operation can be carried out, so that the cleaning effect and quality are further improved.

Referring to fig. 6, fig. 6 is a process flow diagram of an embodiment included in S190 of fig. 5. S190 "placing the workpiece to be cleaned in an atmosphere of ozone" includes S191, S192, S193. The details of S191, S192, and S193 are as follows.

S191, providing a closed first chemical cleaning tank, and placing the first chemical cleaning solution into the first chemical cleaning tank.

S192, introducing ozone gas into the first chemical cleaning tank.

And S193, placing the workpiece to be cleaned in the ozone atmosphere in the first chemical cleaning tank.

The application can provide a first chemical cleaning tank which can be sealed, and then the first chemical cleaning solution is placed in the first chemical cleaning tank. Then, ozone gas is introduced into the first chemical cleaning tank, and finally, the workpiece to be cleaned is placed in the ozone atmosphere in the first chemical cleaning tank. Therefore, the workpiece to be cleaned can be firstly chemically cleaned in the ozone atmosphere, and part of ozone gas can be dissolved into the first chemical cleaning liquid when the workpiece is chemically cleaned, so that the volatilization of ozone in the first chemical cleaning liquid is counteracted, and the concentration of the first chemical cleaning liquid is kept stable.

Referring to fig. 7, fig. 7 is a process flow diagram of an embodiment included in S190 of fig. 5. S190 "placing the workpiece to be cleaned in an atmosphere of ozone" includes S194, S195. The details of S194 and S195 are as follows.

And S194, controlling the workpiece to be cleaned to rotate along a first direction, wherein the first direction is parallel to the direction of the first part to be cleaned, which deviates from the surface of one side of the base body.

And S195, introducing ozone gas in a direction parallel to the surface of the first part to be cleaned, which is far away from the base body.

From the above, the present application can perform chemical cleaning by placing a workpiece to be cleaned in an atmosphere of ozone. One embodiment of the present application provides a first chemical cleaning tank that is sealable and filled with ozone gas. In another embodiment of the present application, the present application may control the workpiece to be cleaned to rotate along a first direction, where the first direction is parallel to a direction of the first portion to be cleaned away from the side surface of the base, and ozone gas is introduced in a direction parallel to a direction of the first portion to be cleaned away from the side surface of the base. It can be understood that the present application only needs to fill a partial space, i.e., a space around the periphery of the part of the workpiece to be cleaned, with ozone gas, so that the consumption of ozone gas can be reduced. And the workpiece to be cleaned is controlled to rotate, and the gas is fixedly ventilated towards one direction when being ventilated, so that the workpiece to be cleaned can uniformly contact and react with the ozone gas through the rotation of the workpiece to be cleaned, the consumption of the ozone gas is further reduced, the cleaning process cost is reduced, and the cleaning quality is improved.

Referring to fig. 8, fig. 8 is a process flow diagram of another embodiment included before S200 in fig. 1. The workpiece to be cleaned further comprises a second part to be cleaned, the second part to be cleaned is arranged on one side, away from the base body, of the first part to be cleaned, and the steps of S180, S181 and S182 are included before S200 'the workpiece to be cleaned is placed in a first chemical cleaning liquid and is chemically cleaned'. The details of S180, S181, and S182 are as follows.

And S180, placing the workpiece to be cleaned into a second chemical cleaning solution for chemical cleaning so as to remove the second part to be cleaned.

And S181, the cleaning rate of the second chemical cleaning solution is greater than that of the first chemical cleaning solution.

And S182, the cleaning precision of the second chemical cleaning solution is smaller than that of the first chemical cleaning solution.

The second part to be cleaned can be removed before the first part to be cleaned is cleaned. Optionally, the volume ratio of the second portion to be cleaned to the first portion to be cleaned is (1-10): 1, it can be understood that, before cleaning the first portion to be cleaned, a large amount of the second portion to be cleaned, which is relatively large in volume, is cleaned and removed first, and then the remaining small amount of the first portion to be cleaned is removed by using the first chemical cleaning solution containing the ozone solution, so that the cleaning speed can be increased, and the cleaning time can be reduced. Optionally, the first portion to be cleaned and the second portion to be cleaned are the same and may be all photoresist layers. Optionally, the second chemical cleaning solution includes sulfuric acid and hydrogen peroxide. Since the first part to be cleaned is in contact with the substrate, the accuracy and precision of the cleaning is precisely controlled, which is not the case for the second part to be cleaned. Namely, the cleaning speed of the second chemical cleaning liquid is greater than that of the first chemical cleaning liquid; the cleaning precision of the second chemical cleaning liquid is smaller than that of the first chemical cleaning liquid. It can also be understood that this application can treat the portion of wasing to the second and carry out coarse cleaning, and the control second treats that the washing speed of portion of wasing is great, and it is less to wash the precision, can improve cleaning efficiency like this. And the first part to be cleaned is cleaned finely, so that the cleaning speed of the first part to be cleaned is controlled to be low, and the cleaning precision is high. Through the cooperation of twice chemical cleaning, the cleaning effect is further improved.

Referring also to fig. 9, fig. 9 is a process flow diagram included after S180 in fig. 8. S183 is further included after "the workpiece to be cleaned is placed in the second chemical cleaning solution for chemical cleaning" in S180. The details of S183 are as follows.

And S183, putting the workpiece to be cleaned into water for water washing to remove the second chemical cleaning solution remained on the surface of the workpiece to be cleaned.

After the second chemical cleaning and before the first chemical cleaning, the workpiece to be cleaned can be placed in water, and the second chemical cleaning liquid on the surface of the workpiece to be cleaned is flushed away through the water, so that the cleanliness of the surface of the workpiece to be cleaned is improved, and the cleaning quality of the first chemical cleaning is not affected.

In addition to the cleaning method provided above, the present application also provides a cleaning apparatus for a workpiece to be cleaned. The cleaning method and the cleaning equipment provided by the embodiment of the application can achieve the technical effects of the application, the cleaning method and the cleaning equipment can be used together or independently, and the application is not particularly limited in this respect. For example, as an embodiment, the above-mentioned cleaning method may be implemented using the cleaning apparatus provided below.

Referring to fig. 10, fig. 10 is a schematic view of a cleaning apparatus 1 for cleaning a workpiece according to a first embodiment of the present application. The cleaning equipment 1 provided by the application comprises a first chemical cleaning tank 10, a first supply device 20, a first rinsing tank 30 and a second supply device 40. The first supply device 20 is connected to the first chemical cleaning tank 10, and the first supply device 20 is configured to introduce a first chemical cleaning solution into the first chemical cleaning tank 10, where the first chemical cleaning solution includes an ozone solution, and the ozone solution is a solution formed by dissolving ozone in water. The second supply device 40 is connected to the first rinsing bath 30, and the second supply device 40 is used for introducing water into the first rinsing bath 30.

The application provides a cleaning device 1, which cleans the workpiece to be cleaned by using a first supply device 20 to introduce an ozone solution into the first chemical cleaning tank 10 to replace a mixed solution of sulfuric acid and hydrogen peroxide in the related art so as to remove the first part to be cleaned. The application provides an ozone solution is the solution that forms with ozone dissolution in aqueous, and ozone solution can rely on the oxidizing nature of solute ozone to etch the first portion that washs to wash the first portion that washs. In addition, the strong oxidizing property of the ozone solution is slightly weaker than that of the mixed solution of sulfuric acid and hydrogen peroxide, so that the cleaning method is more favorable for accurately controlling various parameters of cleaning. Secondly, the cost of the ozone solution is lower than that of the mixed solution of sulfuric acid and hydrogen peroxide, so that the cleaning cost can be reduced. In addition, the ozone solution reacts at normal temperature or slightly higher than the normal temperature, and the volatilization amount of the ozone is far less than that of the hydrogen peroxide at high temperature, so that the cleaning result can be more accurately controlled, and the cleaning quality is improved.

Referring to fig. 11 together, fig. 11 is a schematic view of a cleaning apparatus 1 for cleaning a workpiece according to a second embodiment of the present application. The schematic diagram of the cleaning apparatus 1 provided in the second embodiment of the present application is substantially the same as the schematic diagram of the cleaning apparatus 1 provided in the first embodiment of the present application, except that in the present embodiment, the cleaning apparatus 1 further includes a clamping device 50, the clamping device 50 is disposed in the first chemical cleaning tank 10, and the clamping device 50 is used for clamping a workpiece to be cleaned. The clamping device 50 can be additionally arranged in the cleaning equipment 1 to clamp and fix the workpiece to be cleaned, so that the workpiece to be cleaned can be better cleaned. Alternatively, the clamping device 50 can be used to hold the workpiece to be cleaned horizontally or vertically, or at any angle.

Referring to fig. 12 together, fig. 12 is a schematic view of a cleaning apparatus 1 for cleaning a workpiece according to a third embodiment of the present application. The schematic diagram of the cleaning apparatus 1 provided in the third embodiment of the present application is substantially the same as the schematic diagram of the cleaning apparatus 1 provided in the second embodiment of the present application, except that in the present embodiment, the cleaning apparatus 1 further includes a moving device 60, the moving device 60 is connected to the clamping device 50, and the moving device 60 is used for controlling the clamping device 50 to perform reciprocating motion in the first chemical cleaning tank 10. The application can also add a moving device 60 to move the clamping device 50, so that the workpiece to be cleaned on the clamping device 50 can reciprocate. This application is steerable to be waited to wash the work piece and is in carry out reciprocating motion in the first chemical cleaning liquid to will remain and shake the portion of waiting to wash on the base member surface and fall, get rid of the portion of waiting to wash better, further improve cleaning quality. Optionally, one side of the first portion to be cleaned, which is away from the base body, is a surface to be cleaned, and the workpiece to be cleaned may be controlled to move in a direction parallel to the surface to be cleaned, or the workpiece to be cleaned may be controlled to move in a direction perpendicular to the surface to be cleaned.

Referring to fig. 13 and 14 together, fig. 13 is a schematic view of a cleaning apparatus 1 for a workpiece to be cleaned according to a fourth embodiment of the present application. Fig. 14 is a schematic view of the cleaning apparatus 1 in fig. 13 after inversion. The schematic diagram of the cleaning apparatus 1 provided in the fourth embodiment of the present application is substantially the same as the schematic diagram of the cleaning apparatus 1 provided in the second embodiment of the present application, except that, in the present embodiment, the first chemical cleaning tank 10 includes a bottom wall 11 and a side wall 12 connected to the periphery of the bottom wall 11 in a bending manner, the clamping device 50 has a clamping surface 51, and the clamping surface 51 is used for mounting the workpiece to be cleaned. The cleaning device 1 further comprises a turning device 70, the turning device 70 is connected with the clamping device 50, and the turning device 70 is used for turning the clamping device 50 so that the clamping surface 51 faces the bottom wall 11. The present application may further add an overturning device 70, and the overturning device 70 may control the clamping device 50 to overturn. Optionally, the clamping device 50 comprises a clamp 53 and a connecting rod 52, and the connecting rod 52 connects the clamp 53 and the bottom wall 11. The clamp 53 comprises a clamping surface 51, a turning device 70 is connected with the connecting rod 52, and the turning device 70 is used for turning the connecting rod 52 so that the clamping surface 51 is arranged towards the bottom wall 11. In this way, the workpiece to be cleaned can be arranged also towards the bottom wall 11. Thus, when the first portion to be cleaned is separated from the surface of the base body or is formed by the fine first portion to be cleaned, the first portion to be cleaned can be separated from the surface of the base body due to the action of gravity, and the cleaning effect can be further improved.

Referring to fig. 15 together, fig. 15 is a schematic view of a cleaning apparatus 1 for cleaning a workpiece according to a fifth embodiment of the present application. A schematic diagram of a cleaning apparatus 1 provided in a fifth embodiment of the present application is substantially the same as the schematic diagram of the cleaning apparatus 1 provided in the first embodiment of the present application, except that in the present embodiment, the cleaning apparatus 1 further includes a heating device 80, and the heating device 80 is disposed in the first chemical cleaning tank 10 and is used for heating the first chemical cleaning solution in the first chemical cleaning tank 10. This application can add heating device 80 in first chemical tank, heats the temperature of first chemical cleaning liquid through heating device 80 to improve cleaning efficiency.

Referring to fig. 16 together, fig. 16 is a schematic view of a cleaning apparatus 1 for cleaning a workpiece according to a sixth embodiment of the present application. A schematic diagram of a cleaning apparatus 1 according to a sixth embodiment of the present application is substantially the same as the schematic diagram of the cleaning apparatus 1 according to the first embodiment of the present application, except that in the present embodiment, the cleaning apparatus 1 further includes a third supply device 90, and the third supply device 90 is connected to the first chemical cleaning tank 10 and is configured to introduce ozone gas into the first chemical cleaning tank 10. The present application may further comprise a third supplying device 90, wherein the third supplying device 90 is connected to the first chemical cleaning tank 10 and is used for introducing ozone gas into the first chemical cleaning tank 10. This application accessible lets in ozone gas to first chemical cleaning tank 10 in, makes and treats that the cleaning work piece can further take place chemical cleaning in the atmosphere of ozone, then carries out chemical cleaning in the reentrant first chemical cleaning liquid, through two steps chemical cleaning, further improves cleaning quality and effect. In addition, when the chemical cleaning is carried out, part of the ozone gas can be dissolved into the first chemical cleaning liquid, so that the volatilization of the ozone in the first chemical cleaning liquid is counteracted, and the concentration of the first chemical cleaning liquid is kept stable.

Referring to fig. 17, fig. 17 is a schematic view of a cleaning apparatus 1 for cleaning a workpiece according to a seventh embodiment of the present application. A schematic diagram of a cleaning apparatus 1 according to a seventh embodiment of the present application is substantially the same as the schematic diagram of the cleaning apparatus 1 according to the sixth embodiment of the present application, except that in the present embodiment, the clamping device 50 has a clamping surface 51, the clamping surface 51 is used for mounting the workpiece to be cleaned, the cleaning apparatus 1 further includes a rotating device 100, the rotating device 100 is connected to the clamping device 50, and the rotating device 100 is used for rotating the clamping device 50 in a direction parallel to the clamping surface 51. The present application may further add a rotation device 100, the rotation device 100 being used to rotate the clamping device 50 in a direction parallel to the clamping surface 51. This allows the workpiece to be cleaned to be uniformly contacted with ozone gas.

Referring to fig. 18 together, fig. 18 is a schematic view of a cleaning apparatus 1 for cleaning a workpiece according to an eighth embodiment of the present application. The schematic diagram of the cleaning apparatus 1 according to the eighth embodiment of the present application is substantially the same as the schematic diagram of the cleaning apparatus 1 according to the seventh embodiment of the present application, except that in the present embodiment, the third supply device 90 supplies ozone gas in the direction (D1) parallel to the clamping surface 51. The present application can also make the third supply device 90 introduce ozone gas towards the direction D1, so that the ozone gas can react with the workpiece to be cleaned when entering the first chemical cleaning tank 10, further improving the cleaning efficiency.

The foregoing detailed description has provided for the embodiments of the present application, and the principles and embodiments of the present application have been presented herein for purposes of illustration and description only and to facilitate understanding of the methods and their core concepts; meanwhile, for a person skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.

Claims

1. A method of cleaning a workpiece to be cleaned, the method comprising:

placing the workpiece to be cleaned in an ozone atmosphere, and controlling the workpiece to be cleaned to rotate along a first direction, wherein the first direction is parallel to the direction of the surface of one side, away from the base body, of the first part to be cleaned; ozone gas is introduced in a direction parallel to the surface of one side of the first part to be cleaned, which is far away from the base body;

putting the workpiece to be cleaned into a first chemical cleaning solution;

increasing the temperature of the first chemical cleaning liquid to increase the temperature of the first chemical cleaning liquid from an initial temperature to a first preset temperature, and keeping the temperature for a first preset time; the initial temperature is 20-25 ℃, the first preset temperature can be 30-40 ℃, and the first preset time is 5-10 min;

increasing the temperature of the first chemical cleaning liquid again to increase the temperature of the first chemical cleaning liquid from the first preset temperature to a target temperature, wherein the target temperature is 50-60 ℃; to remove the first portion to be cleaned, the first chemical cleaning solution including an ozone solution; the ozone solution is formed by dissolving ozone in water; and

2. The cleaning method of claim 1, wherein placing the workpiece to be cleaned in a first chemical cleaning solution comprises:

putting the workpiece to be cleaned into a first chemical cleaning solution;

3. The cleaning method as claimed in claim 2, wherein said first chemical cleaning liquid includes a first level, and further comprising, after "placing said workpiece to be cleaned in the first chemical cleaning liquid":

4. The cleaning method of claim 1, further comprising, prior to placing the workpiece to be cleaned in the first chemical cleaning solution:

5. The cleaning method according to claim 4, wherein "placing the workpiece to be cleaned in an atmosphere of ozone" includes:

introducing ozone gas into the first chemical cleaning tank; and

6. The cleaning method according to claim 1, wherein the workpiece to be cleaned further includes a second portion to be cleaned provided on a side of the first portion to be cleaned away from the base, and before "placing the workpiece to be cleaned in a first chemical cleaning liquid and performing chemical cleaning", further comprising:

7. The cleaning method according to claim 6, further comprising, after placing the workpiece to be cleaned in a second chemical cleaning solution for chemical cleaning:

8. A cleaning apparatus for a workpiece to be cleaned, the cleaning apparatus comprising:

a first chemical cleaning tank;

a first rinsing bath; and

the second supply device is connected with the first rinsing bath and is used for introducing water into the first rinsing bath;

the heating device is arranged in the first chemical cleaning tank and used for heating the first chemical cleaning liquid in the first chemical cleaning tank; increasing the temperature of the first chemical cleaning liquid from the initial temperature to a first preset temperature and keeping the temperature for a first preset time; the initial temperature is 20-25 ℃, the first preset temperature can be 30-40 ℃, and the first preset time is 5-10 min; then increasing the temperature of the first chemical cleaning liquid from the first preset temperature to a target temperature, wherein the target temperature is 50-60 ℃;

the clamping device is provided with a clamping surface, and the clamping surface is used for installing the workpiece to be cleaned;

the rotating device is connected with the clamping device and is used for rotating the clamping device along the direction parallel to the clamping surface;

9. The cleaning apparatus defined in claim 8, further comprising:

10. The cleaning apparatus defined in claim 9, further comprising:

11. The cleaning equipment as claimed in claim 9, wherein the first chemical cleaning tank comprises a bottom wall and a side wall connected with the periphery of the bottom wall in a bent mode, and the clamping device is provided with a clamping surface used for mounting the workpiece to be cleaned; the cleaning apparatus further comprises:

12. The cleaning apparatus according to claim 8, wherein the third supply means introduces ozone gas in the direction parallel to the clamping surface.