CN111044874B - Display module, detection method and electronic equipment - Google Patents

Display module, detection method and electronic equipment Download PDF

Info

Publication number
CN111044874B
CN111044874B CN201911408272.4A CN201911408272A CN111044874B CN 111044874 B CN111044874 B CN 111044874B CN 201911408272 A CN201911408272 A CN 201911408272A CN 111044874 B CN111044874 B CN 111044874B
Authority
CN
China
Prior art keywords
reference voltage
transistor
electrically connected
terminal
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201911408272.4A
Other languages
Chinese (zh)
Other versions
CN111044874A (en
Inventor
周小林
李强龙
刘川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan Tianma Microelectronics Co Ltd
Original Assignee
Wuhan Tianma Microelectronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuhan Tianma Microelectronics Co Ltd filed Critical Wuhan Tianma Microelectronics Co Ltd
Priority to CN201911408272.4A priority Critical patent/CN111044874B/en
Publication of CN111044874A publication Critical patent/CN111044874A/en
Application granted granted Critical
Publication of CN111044874B publication Critical patent/CN111044874B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/2607Circuits therefor
    • G01R31/2637Circuits therefor for testing other individual devices
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/28Provision in measuring instruments for reference values, e.g. standard voltage, standard waveform
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/27Testing of devices without physical removal from the circuit of which they form part, e.g. compensating for effects surrounding elements

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Control Of El Displays (AREA)

Abstract

The application discloses a display module, a detection method and an electronic device, wherein a display panel of the display module comprises a substrate, a light-emitting element, a pixel circuit and a detection circuit, the detection circuit comprises a first input end, a second input end and a reference voltage output end, the working state of the detection circuit comprises a first state and a second state, the purpose of transmitting a first reference voltage to the reference voltage output end or transmitting a second reference voltage to the reference voltage output end can be realized by changing the working state of the detection circuit, so that the purpose of enabling the first reference voltage to be matched with the pixel circuit to control the light-emitting element to normally work or enabling the first reference voltage to be matched with the second reference voltage to detect the light-emitting element and a thin film transistor of the pixel circuit is realized, namely, when the thin film transistor is detected, the steps of disassembling the display module and using a micrometer prick needle to detect a corresponding circuit are not needed, the detection process of the thin film transistor in the display module is simplified, and the detection efficiency of the thin film transistor is improved.

Description

Display module, detection method and electronic equipment
Technical Field
The application relates to the technical field of display, in particular to a display module, a detection method and electronic equipment.
Background
With the continuous development of Display technologies, the fabrication technology of Organic Light-Emitting Diode (OLED) Display modules and Micro LED Display modules, which have better Display effects than Liquid Crystal Display (LCD), is becoming mature.
In the manufacturing process of an OLED display module or a Micro LED display module, a pixel circuit for controlling a light emitting element in the module is required to perform detection to determine whether a Thin Film Transistor (TFT) in the pixel circuit functions normally.
Generally, a complete module preparation process comprises a front-stage process and a rear-stage process, wherein the front-stage process is mainly performed on a large substrate, the substrate comprises a plurality of preparation areas, each preparation area is packaged into a complete display module after being cut, and after a pixel circuit and a light-emitting element are formed on each preparation area, detection signals are provided for the pixel circuit through leading-out detection points so as to detect whether a thin film transistor in the pixel circuit is normal or not; in the latter process, if a display abnormality occurs in the module, the pixel circuit needs to be inspected again to determine the cause of the display abnormality in the module. However, since the detection points led out in the front-end process are all cut off in the cutting process, the detection of the thin film transistor can only be realized by disassembling the packaged module, using a micrometer probe to probe the corresponding line and providing the corresponding detection signal so as to realize the detection of the pixel circuit thin film transistor, and the whole detection process is complex in process and low in detection efficiency.
Disclosure of Invention
In order to solve the technical problem, the application provides a display module, a detection method and an electronic device, so as to achieve the purposes of simplifying the detection process of the thin film transistor in the display module and improving the detection efficiency of the thin film transistor.
In order to achieve the technical purpose, the embodiment of the application provides the following technical scheme:
a display module, includes display panel, display panel includes:
a substrate, a light emitting element located on one side of the substrate;
a pixel circuit electrically connected to the light emitting element, the pixel circuit including a plurality of thin film transistors, the pixel circuit for driving the light emitting element to emit light, the pixel circuit including a reference voltage input terminal;
a detection circuit comprising a first input terminal for receiving a first reference voltage, a second input terminal for receiving a second reference voltage, and a reference voltage output terminal electrically connected to the reference voltage input terminal of the pixel circuit;
the working state of the detection circuit comprises a first state and a second state, wherein in the first state, the first reference voltage input through the first input end is transmitted to the reference voltage output end, and in the second state, the second reference voltage input through the second input end is transmitted to the reference voltage output end;
The first reference voltage is used for cooperating with the pixel circuit to control the light-emitting element to work;
the first reference voltage is used for detecting the light-emitting element and the thin film transistor of the pixel circuit in cooperation with the second reference voltage.
A detection method is applied to a display module, the display module comprises a substrate, a plurality of light-emitting elements, a pixel circuit and a detection circuit, the light-emitting elements are arranged on one side of the substrate, the pixel circuit is electrically connected with the light-emitting elements, the detection circuit is electrically connected with a reference voltage input end of the pixel circuit, the detection circuit comprises a first input end, a second input end and a reference voltage output end, the first input end is used for receiving a first reference voltage, the second input end is used for receiving a second reference voltage, and the detection method of a thin film transistor in the pixel circuit comprises the following steps:
in a first state, the first reference voltage is output to the reference voltage input end of the pixel circuit through the detection circuit;
in a second state, the second reference voltage is output to the reference voltage input end of the pixel circuit through the detection circuit;
the first reference voltage and the second reference voltage cooperate to detect the light-emitting element and the thin film transistor of the pixel circuit.
An electronic device comprises the display module.
It can be seen from the above technical solutions that, an embodiment of the present application provides a display module, a detection method and an electronic device, wherein a display panel of the display module includes a substrate, a light emitting device, a pixel circuit and a detection circuit, the detection circuit includes a first input terminal, a second input terminal and a reference voltage output terminal, and an operating state of the detection circuit includes a first state and a second state, and a purpose of transmitting a first reference voltage input through the first input terminal to the reference voltage output terminal or transmitting a second reference voltage input through the second input terminal to the reference voltage output terminal can be achieved by changing the operating state of the detection circuit, so that the first reference voltage is matched with the pixel circuit to control the light emitting device to operate normally, or the first reference voltage is matched with the second reference voltage to align the light emitting device and a thin film crystal of the pixel circuit The purpose of tube detection is that when the display module is detected, the steps of disassembling the display module and pricking corresponding lines by using a micrometer needle are not needed, so that the detection process of the thin film transistor in the display module is simplified, and the detection efficiency of the thin film transistor is improved.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, it is obvious that the drawings in the following description are only embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic top view illustrating a display module according to an embodiment of the present disclosure;
FIG. 2 is a diagram illustrating a specific connection relationship between a pixel circuit and a detection circuit;
fig. 3 is a schematic structural diagram of a detection circuit according to an embodiment of the present application;
fig. 4 is a schematic structural diagram of a detection circuit according to another embodiment of the present application;
fig. 5 is a schematic diagram illustrating a connection relationship between a detection circuit and a driving chip according to an embodiment of the present application;
fig. 6 is a schematic diagram illustrating a connection relationship between a detection circuit and a detection point in a flexible printed circuit according to an embodiment of the present application;
fig. 7 is a schematic structural diagram of a pixel circuit according to an embodiment of the present application;
Fig. 8 is a schematic structural diagram of a pixel circuit according to another embodiment of the present application;
fig. 9 is a schematic structural diagram of a pixel circuit according to yet another embodiment of the present application;
FIG. 10 is a timing diagram of signals received by the pixel circuit shown in FIG. 9 during normal display according to the present application;
FIG. 11 is a schematic flow chart of a detection method according to an embodiment of the present application;
FIG. 12 is a schematic flow chart diagram of a detection method according to another embodiment of the present application;
FIG. 13 is a schematic flow chart of a detection method according to another embodiment of the present application;
fig. 14 is an external view of an electronic device according to an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The embodiment of the application provides a display module assembly, including display panel, refer to fig. 1 and fig. 2, fig. 1 is a schematic view of a overlooking structure of display panel, fig. 2 is a schematic view of a specific connection relation between a pixel circuit and a detection circuit, display panel includes:
a substrate 100, and a light-emitting element 113 located on one side of the substrate 100.
A pixel circuit 114 electrically connected to the light emitting element 113, wherein the pixel circuit 114 includes a plurality of thin film transistors, the pixel circuit 114 is configured to drive the light emitting element 113 to emit light, and the pixel circuit 114 includes a reference voltage input terminal Vin.
A sensing circuit 115, said sensing circuit 115 comprising a first input Vref1, a second input Vref2, and a reference voltage output Vout, said first input Vref1 configured to receive a first reference voltage, said second input Vref2 configured to receive a second reference voltage, said reference voltage output Vout electrically coupled to said reference voltage input Vin of said pixel circuit 114.
The operation state of the detection circuit 115 includes a first state in which the first reference voltage inputted through the first input terminal Vref1 is transmitted to the reference voltage output terminal Vout and a second state in which the second reference voltage inputted through the second input terminal Vref2 is transmitted to the reference voltage output terminal Vout.
The first reference voltage is used to cooperate with the pixel circuit 114 to control the operation of the light emitting element 113.
The first reference voltage is used for detecting the light emitting element 113 and the thin film transistor of the pixel circuit 114 in cooperation with the second reference voltage.
In addition to the light emitting element 113, the pixel circuit 114, and the detection circuit 115 in the display region 110 of the substrate 100, a connection line 116 connecting the detection circuit 115 and the pixel circuit, a plurality of gate lines 111 and a plurality of data lines 112 arranged to cross, and a driving chip 121 in the frame region 120 are shown in fig. 1.
The light emitting element 113, the pixel circuit 114, and the detection circuit 115 are located in a cross-defined area of the plurality of gate lines 111 and the plurality of data lines 112.
When the display module is in a display state, the gate line 111 is used for transmitting a gate signal to the pixel circuit 114, the data line 112 is used for transmitting a data signal to the pixel circuit 114, and the detection circuit 115 is in a first state, and transmits a first reference voltage input through the first input terminal Vref1 to the pixel circuit 114 through the reference voltage output terminal Vout, so that the pixel circuit 114 controls the light emitting element 113 to operate according to the first reference voltage, the gate signal and the data signal.
When the display module is in the thin film transistor detection state, the working state of the detection circuit 115 is controlled, so that the detection circuit 115 sequentially supplies the first reference voltage and the second reference voltage to the pixel circuit 114, and the first reference voltage and the second reference voltage cooperate to detect the light emitting element 113 and the thin film transistor of the pixel circuit 114.
The working state of the detection circuit 115 may be controlled by an enable signal provided by the driving chip, or may be controlled by an external signal, and the external signal may be transmitted to the driving chip first, then transmitted to the detection circuit 115 by the driving chip, or may be directly provided to the detection circuit 115.
According to the above description, when the display module provided by the embodiment is used for detecting the thin film transistor, the steps of disassembling the display module and using a micrometer probe to probe a corresponding line are not required, so that the detection process of the thin film transistor in the display module is simplified, and the detection efficiency of the thin film transistor is improved.
On the basis of the above embodiments, in one embodiment of the present application, the first reference voltage is smaller than the second reference voltage.
More specifically, the first reference voltage is usually low (compared to the ground), and the second reference voltage is usually high (compared to the ground), because the low first reference voltage is usually used for resetting the pixel circuit 114 when the display module is in the display state, so that the data signal can be normally written into the pixel circuit 114, and the pixel circuit 114 can correctly control the light emitting brightness of the light emitting element. When the display module is in the tft detection state, the tft is detected by a low-level first reference voltage, and the light emitting element 113 and the tft are detected by a high-level second reference voltage.
Specifically, when the first reference voltage is smaller than the second reference voltage, the first reference voltage is used to cooperate with the pixel circuit 114 to control the light emitting element 113 to operate when the display module is in the display state, and is also used to detect the thin film transistor of the pixel circuit 114 when the display module is in the thin film transistor detection state, or is used to cooperate with the second reference voltage to detect the thin film transistor of the pixel circuit 114.
The second reference voltage is used for detection of the light emitting element 113.
When the display module is in a thin film transistor detection state, a specific process of detecting the thin film transistor of the pixel circuit 114 by the first reference voltage includes:
the first reference voltage is provided to the pixel circuit 114, a power signal is provided to the pixel circuit 114 through a first power signal terminal of the pixel circuit 114, and a path where the first power signal terminal and the light emitting element 113 are located is turned on in cooperation with the gate signal, at this time, if all thin film transistors in the path are normally turned on, the light emitting element 113 should be turned on, and if any thin film transistor in the path is not normally turned on, the light emitting element 113 cannot be turned on.
The specific process of the second reference voltage for detecting the light emitting element 113 includes:
the second reference voltage is provided to the reference voltage input terminal Vin of the pixel circuit 114 through the reference voltage output terminal Vout, and the gate signal is used to turn on the reference voltage input terminal Vin to a path where the light emitting element 113 is located, where the path is turned on at this time because the second reference voltage is at a high level, and if the light emitting element 113 is turned on, it indicates that the state of the light emitting element 113 is normal, and if the light emitting element 113 cannot be turned on, it indicates that the state of the light emitting element 113 is abnormal.
The specific process of the first reference voltage and the second reference voltage in cooperation with detecting the thin film transistor of the pixel circuit 114 includes:
first, a first reference voltage is provided to the pixel circuit 114, and the pixel circuit 114 is reset in cooperation with a gate signal.
Then, a data signal is supplied to the pixel circuit 114, and the data signal is written into the pixel circuit 114 in cooperation with the gate signal.
Finally, a power signal is provided to the pixel circuit 114 through the first power signal terminal, and the gate signal is matched to turn on the path where the first power signal terminal and the light emitting element are located, and at this time, whether the driving transistor in the path where the first power signal terminal and the light emitting element are located has the problems of current leakage or threshold drift and the like is determined according to whether the brightness of the light emitting element is matched with the brightness corresponding to the data signal.
When detecting whether leakage or threshold drift and other problems exist in the thin film transistor in the path where the first power signal end and the light-emitting element are located, the specific time sequence of the first reference voltage, the data signal, the grid signal and the power signal is the same as the time sequence during display.
A specific possible structure of the detection circuit and the pixel circuit is exemplified below.
Regarding the detection circuit, in an embodiment of the present application, referring to fig. 3, fig. 3 is a schematic structural diagram of a detection circuit provided in the embodiment of the present application, where the detection circuit includes: a first transistor M1 and a second transistor M2, wherein,
a first terminal of the first transistor M1 is electrically connected to the first input terminal Vref1, a second terminal of the first transistor M1 is electrically connected to the reference voltage output terminal Vout, and a control terminal of the first transistor M1 is electrically connected to the first control terminal ctrl 1; in the first state, the first control terminal ctrl1 controls the first reference voltage input from the first input terminal Vref1 to be transmitted to the reference voltage output terminal Vout.
A first end of the second transistor M2 is electrically connected to the second input terminal Vref2, a second end of the second transistor M2 is electrically connected to the reference voltage output terminal Vout, and a control end of the second transistor M2 is electrically connected to the second control terminal ctrl 2; the second control terminal ctrl2 controls the second reference voltage input by the second input terminal Vref2 to be transmitted to the reference voltage output terminal Vout.
In this embodiment, a first transistor M1 is used as a control device for determining whether a first reference voltage can be transmitted to the reference voltage output terminal Vout, a second transistor M2 is used as a control device for determining whether a second reference voltage can be transmitted to the reference voltage output terminal Vout, and more specifically, a signal received by the first control terminal ctrl1 is transmitted to the control terminal of the first transistor M1, so as to turn on or off the first transistor M1, thereby controlling whether the first reference voltage is transmitted to the reference voltage output terminal Vout; the signal received by the second control terminal ctrl2 is transmitted to the control terminal of the second transistor M2, so as to turn on or off the second transistor M2, thereby controlling whether to transmit the second reference voltage to the reference voltage output terminal Vout. But the first transistor M1 and the second transistor M2 may not be turned on at the same time, i.e., the first reference voltage and the second reference voltage may not be simultaneously transmitted to the reference voltage output terminal Vout.
The first transistor M1 and the second transistor M2 are used as control devices for controlling whether the first reference voltage and the second reference voltage are transmitted to the reference voltage output end Vout or not, and the control device has the advantages of simple circuit structure and control mode.
In the detection circuit structure shown in fig. 3, the first control terminal ctrl1 and the second control terminal ctrl2 are separately arranged, and at this time, corresponding control signals need to be provided for the first control terminal ctrl1 and the second control terminal ctrl2, respectively, so as to achieve the purpose of controlling the turn-off and turn-on of the first transistor M1 and the second transistor M2, respectively.
In some embodiments of the present application, referring to fig. 4, fig. 4 is a schematic structural diagram of a detection circuit provided in this embodiment of the present application, and the first control terminal CTRL1 and the second control terminal CTRL2 may also be electrically connected together to form a control terminal CTRL, that is, the purpose of turning off and turning on the first transistor M1 and the second transistor M2 is achieved by one input signal, but since the first transistor M1 and the second transistor M2 can only have one on at the same time, in the structure shown in fig. 4, the types of the first transistor M1 and the second transistor M2 are different, so as to achieve the purpose of turning one on and the other off when the input signals at the control terminals are the same.
The type of the first transistor M1 and the second transistor M2 may be different: the first transistor M1 is one of an N-type transistor and a P-type transistor, and the second transistor M2 is the other of an N-type transistor and a P-type transistor. That is, when the first transistor M1 is an N-type transistor, the second transistor M2 is a P-type transistor, and when the second transistor M2 is a P-type transistor, the first transistor M1 is an N-type transistor.
In the circuit structure shown in fig. 4, the first transistor M1 is an N-type transistor, the second transistor M2 is a P-type transistor, and at this time, when the control signals input by the first control terminal ctrl1 and the second control terminal ctrl2 are at a low level, the voltage of the control terminal of the second transistor M2 is less than the voltage of the first terminal of the second transistor M2, and the voltage difference between the control terminal of the second transistor M2 and the first terminal of the second transistor M2 is less than the threshold voltage of the P-type transistor, so that the on condition of the P-type transistor is satisfied, at this time, the second transistor M2 is turned on, and the second reference voltage is transmitted to the reference voltage output terminal Vout; at this time, the first terminal of the first transistor M1 receives the first reference signal with low level, the control signal received by the control terminal is also low level, as long as the potential difference between the first reference signal and the control signal is smaller than the threshold voltage of the N-type transistor, the first transistor M1 can be turned off, and the purpose that only the first reference voltage or the second reference voltage is transmitted to the reference voltage output terminal Vout at the same time is satisfied.
Similarly, when the control signals input by the first control terminal ctrl1 and the second control terminal ctrl2 are at a high level, as long as the difference between the potential of the control signal and the first reference voltage is ensured to be greater than the threshold voltage of the N-type transistor, the potential difference between the control terminal and the first terminal of the second transistor M2 satisfies the conduction condition of the N-type transistor, at this time, the first transistor M1 is turned on, and the first reference is transmitted to the reference voltage output terminal Vout; at this time, the voltage of the control terminal of the second transistor M2 is greater than the voltage of the first terminal of the second transistor M2, and does not satisfy the on condition that the voltage of the control terminal of the P-type transistor needs to be less than the voltage of the first terminal, and at this time, the second transistor M2 is turned off.
On the basis of the above embodiments, in another embodiment of the present application, referring to fig. 5, fig. 5 is a schematic diagram illustrating an electrical connection between a driving chip 121 and a detecting circuit 115 provided in the embodiment of the present application, where the display panel includes a display area 110 and a frame area 120.
The frame area 120 is provided with a driving chip 121.
In fig. 5, the driving chip 121 provides a first reference voltage to the first input terminal Vref1 of the detection circuit 115 through a first detection line TL1, provides a second reference voltage to the second input terminal Vref2 of the detection circuit 115 through a second detection line TL2, and provides control signals to the first control terminal and the second control terminal (in fig. 5, the first control terminal and the second control terminal are electrically connected and represented by a control terminal CTRL) of the detection circuit 115 through a third detection line TL 3.
In the first state, the control signal turns the first transistor M1 on and the second transistor M2 off.
In the second state, the control signal turns on the second transistor M2 and the first transistor M1 is turned off.
In the structure shown in fig. 5, the first input terminal Vref1, the second input terminal Vref2, the first control terminal, and the second control terminal of the detection circuit 115 are all connected to the driving signal, that is, in the detection process of the thin film transistor, the first reference voltage, the second reference voltage, and the control signals required by the first control terminal and the second control terminal are all provided by the driving chip 121, and there is no need to additionally provide other controllers or introduce signals through other external structures, so that the detection efficiency of the thin film transistor can be further improved.
Optionally, referring to fig. 6, in the display module shown in fig. 6, a Flexible Printed Circuit board 200 (FPC) is further included, a first detecting point TP1, a second detecting point TP2, and a third detecting point TP3 are disposed on the Flexible Printed Circuit board 200, where the first detecting point TP1 is electrically connected to the first input terminal Vref1 of the detecting Circuit 115, the second detecting point TP2 is electrically connected to the second input terminal Vref2 of the detecting Circuit 115, and the third detecting point TP3 is electrically connected to the first control terminal CTRL and the second control terminal (in fig. 6, the first control terminal and the second control terminal are electrically connected, and are represented by a control terminal) of the detecting Circuit 115; in the detection process of the thin film transistor, the first reference voltage, the second reference voltage and the control signal may be provided by an external circuit or a controller disposed on the flexible circuit board 200, so that when the driving chip 121 of the display module is abnormal, the thin film transistor of the pixel circuit 114 may still be detected.
With reference to fig. 7, fig. 7 is a schematic structural diagram of a pixel circuit provided in this embodiment, where the pixel circuit includes a first detection path TX1 and a second detection path TX2, the first detection path TX1 is used to detect the light emitting element 113, and the second detection path TX2 is used to detect a thin film transistor of the pixel circuit.
The first detection path TX1 is electrically connected to the first gate signal terminal S1, the reference voltage input terminal Vin, and the anode of the light emitting element 113.
In response to the signal inputted from the first gate signal terminal S1, the first detection path TX1 transmits the signal inputted from the reference voltage input terminal Vin to the anode of the light emitting element 113.
The second detection path TX2 is electrically connected to the reference voltage input terminal Vin, the second gate signal terminal S2, the third gate signal terminal S3, the first power signal terminal PVDD, and the anode of the light emitting element 113.
The second detection path TX2 transmits the signal of the first power signal terminal PVDD to the anode of the light emitting element 113 in response to the signals of the second gate signal terminal S2, the third gate signal terminal S3, and the reference voltage input terminal Vin.
In the process of detecting the thin film transistor of the pixel circuit, since the probability of the thin film transistor in the first detection path TX1 being abnormal is very low, it is considered that the first detection path TX1 is not abnormal, when the first detection path TX1 is turned on, if the signal input by the reference voltage input terminal Vin is a first reference voltage, the first reference voltage resets the pixel circuit, and if the signal input by the reference voltage input terminal Vin is a second reference voltage, the light emitting element 113 receives the second reference voltage and then is turned on, at this time, the current in the first detection path TX1 in fig. 7 flows to the arrow in the first detection path TX1 in the figure, and if the light emitting element 113 cannot be turned on at this time, the light emitting element 113 is abnormal.
When the first detection path TX1 confirms that the light emitting element 113 has no problem, the second detection path TX2 inputs correct signals of the second gate signal terminal S2, the third gate signal terminal S3 and the reference voltage input terminal Vin to control the conduction of the second detection path TX2, and can determine whether the thin film transistor in the second detection path TX2 is abnormal by whether the light emitting element 113 is turned on. In fig. 7, an arrow in the second detection path TX2 indicates a current flow direction when the path is formed, that is, a current flow direction from the first power supply signal terminal PVDD to the light emitting element 113.
Referring to fig. 8, the first detection path TX1 includes: and a third transistor M3.
A control terminal of the third transistor M3 is electrically connected to the first gate signal terminal S1.
A first terminal of the third transistor M3 is electrically connected to the reference voltage input terminal Vin.
A second end of the third transistor M3 is electrically connected to the anode of the light-emitting element 113.
In this embodiment, the thin film transistor in the first detection path TX1 only includes the third transistor M3, and the manufacturing process of the third transistor M3 is relatively mature, so that the probability of the third transistor M3 in the first detection path TX1 being abnormal is considered to be very low, that is, the third transistor M3 in the first detection path TX1 is considered to be normal, so that, taking the structure shown in fig. 8 as an example, when the control terminal of the third transistor M3 receives a signal to turn on (in fig. 8, the third transistor M3 is a P-type transistor, the control terminal is turned on when receiving a gate signal of a low level), the second reference voltage can be transmitted to the reference voltage input terminal Vin of the pixel circuit through the reference voltage output terminal of the detection circuit by controlling the operating state of the detection circuit, so that the second reference voltage drives the light emitting element 113, when the light emitting element 113 is normal, the light emitting element 113 is turned on by the driving of the second reference voltage, and when the light emitting element 113 is abnormal, the second reference voltage applied to the anode of the light emitting element 113 cannot drive the light emitting element 113 to be normally turned on.
Still referring to fig. 8, the second detection path TX2 includes: a fourth transistor M4, a fifth transistor M5, a sixth transistor M6, and a seventh transistor M7.
A control end of the fourth transistor M4 is electrically connected to the second gate signal end S2, a first end of the fourth transistor M4 is electrically connected to a control end of the fifth transistor M5, and a second end of the fourth transistor M4 is electrically connected to the reference voltage input terminal Vin.
A control terminal of the sixth transistor M6 and a control terminal of the seventh transistor M7 are electrically connected to the third gate signal terminal S3, a first terminal of the sixth transistor M6 is electrically connected to the first power signal terminal PVDD, a second terminal of the sixth transistor M6 is electrically connected to a first terminal of the fifth transistor M5, a second terminal of the fifth transistor M5 is electrically connected to a first terminal of the seventh transistor M7, and a second terminal of the seventh transistor M7 is electrically connected to the anode of the light emitting element 113.
In this embodiment, when detecting the second detection path TX 2:
first, a low-level gate signal is provided to the fourth transistor M4 through the second gate signal terminal S2 to control the fourth transistor M4 to turn on, and a first reference voltage is provided to the reference voltage input terminal Vin of the pixel circuit to pull down the potential of the node N1 in fig. 7 by controlling the operating state of the detection circuit, so as to turn on the fifth transistor M5.
Then, a low-level gate signal is provided to the control terminals of the sixth transistor M6 and the seventh transistor M7 through the third gate signal terminal S3 to control the sixth transistor M6 and the seventh transistor M7 to be turned on, at this time, the second detection path TX2 is turned on, and a power signal is provided through the first power signal terminal PVDD, so that the power signal may be applied to the anode of the light emitting element 113, and in the case of no abnormality of the light emitting element 113, if none of the fourth transistor M4, the fifth transistor M5, the sixth transistor M6, and the seventh transistor M7 is abnormal, the light emitting element 113 is turned on, and if any one of the fourth transistor M4, the fifth transistor M5, the sixth transistor M6, and the seventh transistor M7 is abnormal, the light emitting element 113 cannot be turned on.
In the above-mentioned detection process, it can be found that, when the second detection path TX2 is detected, even if the sixth transistor M6 and the seventh transistor M7 are turned on before the fifth transistor M5 is turned on, the first power signal terminal PVDD cannot form a path with the anode of the light emitting element 113, so that when a low-level gate signal is provided to the control terminal of the third transistor M3 through the first gate signal terminal S1 to turn on the third transistor M3, the same gate signal can be provided to the control terminals of the sixth transistor M6 and the seventh transistor M7 through the third gate signal terminal S3, which does not affect the final detection result, so that the timing of the gate signal received by the third gate signal terminal S3 and the timing of the first gate signal terminal S1 can be the same, that is, the third gate signal terminal S3 and the first gate signal terminal S1 can be the same signal terminal, thereby simplifying the gate signal at the time of detection.
On the basis of the foregoing embodiment, in an alternative embodiment of the present application, referring to fig. 9, fig. 9 is a schematic structural diagram of a pixel circuit provided in the embodiment of the present application, and in the structure shown in fig. 9, the pixel circuit further includes:
a data signal input terminal Vdata, a fourth gate signal input terminal, an eighth transistor M8, and a ninth transistor M9; control terminals of the eighth transistor M8 and the ninth transistor M9 are electrically connected to the fourth gate signal input terminal, a first terminal of the eighth transistor M8 is electrically connected to the data signal input terminal Vdata, and a second terminal of the eighth transistor M8 is electrically connected to a first terminal of the fifth transistor M5;
a first terminal of the ninth transistor M9 is electrically connected to the second terminal of the fifth transistor M5, and a second terminal of the ninth transistor M9 is electrically connected to the control terminal of the fifth transistor M5.
A first electrode of the capacitor Cst is electrically connected to the first power signal, and a second electrode of the capacitor Cst is electrically connected to the control terminal of the fifth transistor M5.
For the pixel circuit shown in fig. 9, referring to fig. 10, fig. 10 is a level timing sequence of signals received by the pixel circuit shown in fig. 9 during normal display, in a reset phase T1, the first gate signal terminal S1 and the second gate signal terminal S2 input low-level gate signals to turn on the third transistor M3 and the fourth transistor M4, and the reference signal input terminal Vin inputs a first reference voltage to reset the nodes N2 and N1, turn on the fifth transistor M5, and the third gate signal terminal S3 and the fourth gate signal terminal S4 input high-level gate signals to turn off the sixth transistor M6, the seventh transistor M7, the eighth transistor M8 and the ninth transistor M9.
In the data writing phase T2, the first gate signal terminal S1 and the second gate signal terminal S2 input a high level gate signal to turn off the third transistor M3 and the fourth transistor M4, the potential of the node N1 is maintained at the potential of the first reference voltage due to the existence of the capacitor Cst, and the fifth transistor M5 is maintained on; the fourth gate signal terminal S4 receives a gate signal of a low level to turn on the eighth transistor M8 and the ninth transistor M9, and at this time, the fifth transistor M5, the eighth transistor M8 and the ninth transistor M9 are diode-connected, and a data signal is written from the data signal input terminal Vdata to the control terminal of the fifth transistor M5, i.e., the N1 node.
In the light emitting display period T3, the first gate signal terminal S1, the second gate signal terminal S2 and the fourth gate signal terminal S4 input a high level gate signal to turn off the third transistor M3, the fourth transistor M4, the eighth transistor M8 and the ninth transistor M9, the third gate signal terminal S3 input a low level gate signal to turn on the sixth transistor M6 and the seventh transistor M7, at this time, the fifth transistor M5, the sixth transistor M6 and the seventh transistor M7 are turned on, and the power signals input from the first power signal terminal PVDD and the second power signal terminal PVEE and the data signal written in the node N1 control the light emitting element 113 to emit light.
In the thin film transistor test of the pixel circuit shown in fig. 9, when the first test path TX1 tests and confirms that the light emitting element 113 has no abnormality, the control terminals of the third transistor M3 and the fourth transistor M4 are first provided with low-level gate signals through the first gate signal terminal S1 and the second gate signal terminal S2 to turn on the third transistor M3 and the fourth transistor M4, and the reference voltage input terminal Vin of the pixel circuit is provided with a first reference voltage through the test circuit, so that the first reference voltage resets the nodes N1 and N2 of the pixel circuit.
Then, the control terminals of the third transistor M3 and the fourth transistor M4 are provided with a high-level gate signal through the first gate signal terminal S1 and the second gate signal terminal S2 to turn off the third transistor M3 and the fourth transistor M4, and at this time, due to the existence of the capacitor Cst, the N1 node is kept at a low potential, so that the fifth transistor M5 is in an on state.
Then, the control terminals of the eighth transistor M8 and the ninth transistor M9 are supplied with a gate signal of a low level through the fourth gate signal terminal S4, and a data signal is input to the data signal input terminal Vdata, at which time the eighth transistor M8, the fifth transistor M5, and the ninth transistor M9 constitute a diode connection, so that the data signal is written to the N1 node.
Finally, the control terminals of the third, fourth, eighth and ninth transistors M3, M4, M8 and M9 are supplied with the gate signals of high level through the fourth, first and second gate signal terminals S4, S1 and S2 to turn off these transistors, and the sixth and seventh transistors M6 and M7 are supplied with the gate signals of low level through the third transistor M3 to turn on the sixth and seventh transistors M6 and M7, at which time the fifth transistor M5 is kept in an on state due to the presence of the capacitor Cst, i.e., a path is formed from the first power signal terminal PVDD, the sixth, fifth and seventh transistors M6, M5 and M7 to the light emitting element 113, and the light emitting element 113 is lighted according to the data signal by supplying the power signal to the first power signal terminal PVDD, whether the brightness of the light emitting element 113 corresponds to the brightness signal of the data, it can be determined whether the fifth transistor M5 has a leakage current or a threshold shift.
As can be easily seen from the above description, the level timing of the gate signal provided when the second detection path TX2 is detected is the same as the level timing when the pixel circuit controls the light emitting element 113 to emit light, so that it is not necessary to additionally design a corresponding detection timing for the second detection path TX2, which is beneficial to simplifying the detection process of the thin film transistor.
The following describes the detection method provided in the embodiment of the present application, and the detection method described below may be referred to in correspondence with the detection process of the display module described above.
Accordingly, an embodiment of the present invention further provides a detection method, as shown in fig. 11, fig. 11 is a schematic flowchart of a detection method provided in an embodiment of the present invention, the detection method is applied to a display module, and referring to fig. 1 and fig. 2, the display module includes a substrate 100, a plurality of light emitting elements 113 located on one side of the substrate 100, a pixel circuit 114 electrically connected to the light emitting elements 113, and a detection circuit 115 electrically connected to a reference voltage input terminal Vin of the pixel circuit 114, the detection circuit 115 includes a first input terminal Vref1, a second input terminal Vref2, and a reference voltage Vout output terminal, the first input terminal Vref1 is configured to receive a first reference voltage, the second input terminal Vref2 is configured to receive a second reference voltage, and the detection method of a thin film transistor in the pixel circuit includes:
s101: in a first state, the first reference voltage is output to the reference voltage input terminal of the pixel circuit through the detection circuit.
S102: in a second state, the second reference voltage is output to the reference voltage input terminal of the pixel circuit through the detection circuit.
The first reference voltage and the second reference voltage cooperate to detect the light-emitting element and the thin film transistor of the pixel circuit.
When the detection method provided by the embodiment is used for detecting the thin film transistor, the steps of disassembling the display module and pricking the corresponding circuit by using a micrometer needle are not required, the detection process of the thin film transistor in the display module is simplified, and the detection efficiency of the thin film transistor is improved
On the basis of the above embodiments, in an embodiment of the present application, referring to fig. 12, fig. 12 is a schematic flowchart of another detection method provided in the embodiment of the present application, where the detection method includes:
s201: in a first state, the first reference voltage is output to the reference voltage input terminal of the pixel circuit through the detection circuit.
The first reference voltage cooperates with the pixel circuit to control the light-emitting element to work;
s202: in a second state, the second reference voltage is output to the reference voltage input terminal of the pixel circuit through the detection circuit.
The first reference voltage and the second reference voltage cooperate to detect the light-emitting element and the thin film transistor of the pixel circuit.
That is, in the present embodiment, the first reference voltage is usually at a low level (compared to the ground), and the second reference voltage is usually at a high level (compared to the ground), because the low level of the first reference voltage is usually used for resetting the pixel circuit when the display module is in the display state, so that the data signal can be normally written into the pixel circuit, and the pixel circuit can correctly control the light emitting brightness of the light emitting element. When the display module is in a thin film transistor detection state, the thin film transistor needs to be detected by a first reference voltage with a low level, and the light-emitting element needs to be detected by a second reference voltage with a high level.
On the basis of the above embodiments, in one embodiment of the present application, the pixel circuit includes a first detection path and a second detection path, the first detection path being electrically connected to a first gate signal terminal, the reference voltage input terminal, and an anode of the light emitting element.
The second detection path is electrically connected to the reference voltage input terminal, the second gate signal terminal, the third gate signal terminal, the first power signal terminal, and the anode of the light emitting element.
Referring to fig. 13, fig. 13 is a schematic flowchart of another detection method provided in the embodiment of the present application, where the detection method includes:
s301: in a second state, the reference voltage output end outputs a second reference voltage, and the first detection path transmits the second reference voltage to the anode of the light-emitting element in response to a signal input by the first gate signal end; if the light-emitting element emits light, the light-emitting element is normal.
S302: in a first state, the reference voltage output terminal outputs the first reference voltage, the first reference voltage is transmitted to the second detection path in response to the signal of the second gate signal terminal and the signal of the third gate signal terminal, and the second detection path transmits the signal of the first power signal terminal to the anode of the light emitting element; if the light-emitting element emits light, the thin film transistor in the second detection path is normal.
In the process of detecting the thin film transistor of the pixel circuit, because the probability of the thin film transistor in the first detection path being abnormal is extremely low, the first detection path is considered not to be abnormal, when the first detection path is conducted, if the signal input by the reference voltage input end is a first reference voltage, the first reference voltage resets the pixel circuit, if the signal input by the reference voltage input end is a second reference voltage, the light-emitting element receives the second reference voltage and then is turned on, and if the light-emitting element cannot be turned on at the moment, the light-emitting element is abnormal.
When the first detection path confirms that the light-emitting element has no problem, correct signals of the second grid signal end, the third grid signal end and the reference voltage input end are input so as to control the conduction of the second detection path, and whether the thin film transistor in the second detection path is abnormal or not can be judged by judging whether the light-emitting element is lightened or not.
Correspondingly, an embodiment of the present application further provides an electronic device, referring to fig. 14, where fig. 14 is an appearance schematic diagram of the electronic device, and the electronic device includes the display module according to any one of the embodiments.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (15)

1. The utility model provides a display module assembly which characterized in that, includes display panel, display panel includes:
a substrate, a light emitting element located on one side of the substrate;
a pixel circuit electrically connected to the light emitting element, the pixel circuit including a plurality of thin film transistors, the pixel circuit for driving the light emitting element to emit light, the pixel circuit including a reference voltage input terminal;
a detection circuit comprising a first input terminal for receiving a first reference voltage, a second input terminal for receiving a second reference voltage, and a reference voltage output terminal electrically connected to the reference voltage input terminal of the pixel circuit;
the working state of the detection circuit comprises a first state and a second state, wherein in the first state, the first reference voltage input through the first input end is transmitted to the reference voltage output end, and in the second state, the second reference voltage input through the second input end is transmitted to the reference voltage output end;
the first reference voltage is used for cooperating with the pixel circuit to control the light-emitting element to work;
The first reference voltage is used for detecting the light-emitting element and the thin film transistor of the pixel circuit in cooperation with the second reference voltage.
2. The display module of claim 1, wherein the first reference voltage is less than the second reference voltage.
3. The display module of claim 2, wherein the first reference voltage is used for testing the thin film transistor of the pixel circuit, or the first reference voltage and the second reference voltage are used for testing the thin film transistor of the pixel circuit;
the second reference voltage is used for detecting the light-emitting element.
4. The display module of claim 1, wherein the detection circuit comprises: a first transistor and a second transistor, wherein,
a first end of the first transistor is electrically connected with the first input end, a second end of the first transistor is electrically connected with the reference voltage output end, and a control end of the first transistor is electrically connected with a first control end; in the first state, the first control end controls the first reference voltage input by the first input end to be transmitted to the reference voltage output end;
A first end of the second transistor is electrically connected with the second input end, a second end of the second transistor is electrically connected with the reference voltage output end, and a control end of the second transistor is electrically connected with a second control end; the second control end controls the second reference voltage input by the second input end to be transmitted to the reference voltage output end.
5. The display module according to claim 4, wherein the first control terminal is electrically connected to the second control terminal.
6. The display module of claim 5, wherein the first transistor is one of an N-type transistor and a P-type transistor, and the second transistor is the other of the N-type transistor and the P-type transistor.
7. The display module as claimed in claim 5, wherein the display panel comprises a display area and a frame area, and the driving chip is located in the frame area;
the driving chip provides a first reference voltage to a first input end of the detection circuit through a first detection line, provides a second reference voltage to a second input end of the detection circuit through a second detection line, and provides control signals to the first control end and the second control end of the detection circuit through a third detection line;
In the first state, the control signal turns the first transistor on, and the second transistor off;
in the second state, the control signal turns the second transistor on and the first transistor off.
8. The display module of claim 1, wherein the pixel circuit comprises a first detection path and a second detection path, the first detection path is used for detecting the light emitting element, and the second detection path is used for detecting a thin film transistor of the pixel circuit;
the first detection path is electrically connected with a first grid signal end, the reference voltage input end and the anode of the light-emitting element;
the first detection path transmits a signal input by the reference voltage input end to the anode of the light-emitting element in response to a signal input by the first grid signal end;
the second detection path is electrically connected with the reference voltage input end, the second grid signal end, the third grid signal end, the first power supply signal end and the anode of the light-emitting element;
the second detection path transmits a signal of the first power signal terminal to an anode of the light emitting element in response to signals of the second gate signal terminal, the third gate signal terminal, and the reference voltage input terminal.
9. The display module of claim 8, wherein the first detection path comprises: a third transistor;
the control end of the third transistor is electrically connected with the first grid signal end;
a first end of the third transistor is electrically connected with the reference voltage input end;
a second terminal of the third transistor is electrically connected to an anode of the light emitting element.
10. The display module of claim 8, wherein the second detection path comprises: a fourth transistor, a fifth transistor, a sixth transistor, and a seventh transistor;
the control end of the fourth transistor is electrically connected with the second grid signal end, the first end of the fourth transistor is electrically connected with the control end of the fifth transistor, and the second end of the fourth transistor is electrically connected with the reference voltage input end;
the control end of the sixth transistor is electrically connected with the control end of the seventh transistor and the third gate signal end, the first end of the sixth transistor is electrically connected with the first power signal end, the second end of the sixth transistor is electrically connected with the first end of the fifth transistor, the second end of the fifth transistor is electrically connected with the first end of the seventh transistor, and the second end of the seventh transistor is electrically connected with the anode of the light-emitting element.
11. The display module of claim 10, wherein the second detection path further comprises:
a data signal input terminal, a fourth gate signal input terminal, an eighth transistor, and a ninth transistor; control terminals of the eighth transistor and the ninth transistor are electrically connected to the fourth gate signal input terminal, a first terminal of the eighth transistor is electrically connected to the data signal input terminal, and a second terminal of the eighth transistor is electrically connected to a first terminal of the fifth transistor;
a first end of the ninth transistor is electrically connected with a second end of the fifth transistor, and a second end of the ninth transistor is electrically connected with a control end of the fifth transistor;
and a first electrode of the capacitor is electrically connected with the first power supply signal, and a second electrode of the capacitor is electrically connected with the control end of the fifth transistor.
12. A detection method is applied to a display module, the display module comprises a substrate, a plurality of light-emitting elements positioned on one side of the substrate, a pixel circuit electrically connected with the light-emitting elements and a detection circuit electrically connected with a reference voltage input end of the pixel circuit, the detection circuit comprises a first input end, a second input end and a reference voltage output end, the first input end is used for receiving a first reference voltage, the second input end is used for receiving a second reference voltage, and the detection method of a thin film transistor in the pixel circuit comprises the following steps:
In a first state, the first reference voltage is output to the reference voltage input end of the pixel circuit through the detection circuit;
in a second state, the second reference voltage is output to the reference voltage input end of the pixel circuit through the detection circuit;
the first reference voltage and the second reference voltage cooperate to detect the light-emitting element and the thin film transistor of the pixel circuit.
13. The method according to claim 12, wherein in a first state, the first reference voltage is output to the reference voltage input terminal of the pixel circuit through the detection circuit;
the first reference voltage cooperates with the pixel circuit to control the light-emitting element to work.
14. The detection method according to claim 12, wherein the pixel circuit includes a first detection path and a second detection path, the first detection path being electrically connected to a first gate signal terminal, the reference voltage input terminal, and an anode of the light emitting element;
the second detection path is electrically connected with the reference voltage input end, the second grid signal end, the third grid signal end, the first power supply signal end and the anode of the light-emitting element;
In a second state, the reference voltage output end outputs a second reference voltage, and the first detection path transmits the second reference voltage to the anode of the light-emitting element in response to a signal input by the first gate signal end; if the light-emitting element emits light, the light-emitting element is normal;
in a first state, the reference voltage output terminal outputs the first reference voltage, the first reference voltage is transmitted to the second detection path in response to the signal of the second gate signal terminal and the signal of the third gate signal terminal, and the second detection path transmits the signal of the first power signal terminal to the anode of the light emitting element; if the light-emitting element emits light, the thin film transistor in the second detection path is normal.
15. An electronic device comprising the display module according to any one of claims 1 to 11.
CN201911408272.4A 2019-12-31 2019-12-31 Display module, detection method and electronic equipment Active CN111044874B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201911408272.4A CN111044874B (en) 2019-12-31 2019-12-31 Display module, detection method and electronic equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201911408272.4A CN111044874B (en) 2019-12-31 2019-12-31 Display module, detection method and electronic equipment

Publications (2)

Publication Number Publication Date
CN111044874A CN111044874A (en) 2020-04-21
CN111044874B true CN111044874B (en) 2022-05-24

Family

ID=70241663

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201911408272.4A Active CN111044874B (en) 2019-12-31 2019-12-31 Display module, detection method and electronic equipment

Country Status (1)

Country Link
CN (1) CN111044874B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113820576B (en) * 2020-06-17 2023-11-14 Tcl科技集团股份有限公司 Method and device for testing light-emitting diode device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN204288766U (en) * 2014-12-24 2015-04-22 京东方科技集团股份有限公司 A kind of image element circuit, organic EL display panel and display device
CN104575394A (en) * 2015-02-03 2015-04-29 深圳市华星光电技术有限公司 AMOLED (active matrix organic light emitting display) pixel driving circuit and pixel driving method
WO2016155087A1 (en) * 2015-03-27 2016-10-06 深圳市华星光电技术有限公司 Amoled pixel drive circuit and pixel drive method
CN106531074A (en) * 2017-01-10 2017-03-22 上海天马有机发光显示技术有限公司 Organic light emitting pixel drive circuit, drive method and organic light emitting display panel

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5503255B2 (en) * 2009-11-10 2014-05-28 グローバル・オーエルイーディー・テクノロジー・リミテッド・ライアビリティ・カンパニー Pixel circuit, display device, and inspection method
US9786223B2 (en) * 2012-12-11 2017-10-10 Ignis Innovation Inc. Pixel circuits for AMOLED displays
KR102527727B1 (en) * 2016-08-30 2023-05-02 엘지디스플레이 주식회사 Data driver, organic light-emitting display device and method for driving thereof
CN106935192B (en) * 2017-05-12 2019-04-02 京东方科技集团股份有限公司 Pixel circuit and its driving method, display device
CN109697944B (en) * 2017-10-20 2020-11-24 京东方科技集团股份有限公司 Detection method of pixel circuit, driving method of display panel and display device
CN107657923B (en) * 2017-11-15 2020-02-21 合肥鑫晟光电科技有限公司 Detection method of pixel circuit, driving method of display panel, display device and pixel circuit
TWI635474B (en) * 2018-02-09 2018-09-11 友達光電股份有限公司 Display apparatus and pixel detection method thereof
CN108597449B (en) * 2018-04-26 2020-04-21 京东方科技集团股份有限公司 Detection method of pixel circuit, driving method of display panel and display panel
CN109192141B (en) * 2018-10-30 2021-01-22 京东方科技集团股份有限公司 Display panel, detection method thereof and display device
US11302760B2 (en) * 2019-04-19 2022-04-12 Boe Technology Group Co., Ltd. Array substrate and fabrication method thereof, and display device
CN110111712B (en) * 2019-05-30 2021-12-17 合肥鑫晟光电科技有限公司 Threshold voltage drift detection method and threshold voltage drift detection device
CN110264931B (en) * 2019-07-10 2023-07-18 京东方科技集团股份有限公司 Detection method and detection device for threshold voltage drift of transistor in pixel circuit
CN110428776B (en) * 2019-08-14 2021-03-19 京东方科技集团股份有限公司 Pixel circuit, detection method, display panel and display device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN204288766U (en) * 2014-12-24 2015-04-22 京东方科技集团股份有限公司 A kind of image element circuit, organic EL display panel and display device
CN104575394A (en) * 2015-02-03 2015-04-29 深圳市华星光电技术有限公司 AMOLED (active matrix organic light emitting display) pixel driving circuit and pixel driving method
WO2016155087A1 (en) * 2015-03-27 2016-10-06 深圳市华星光电技术有限公司 Amoled pixel drive circuit and pixel drive method
CN106531074A (en) * 2017-01-10 2017-03-22 上海天马有机发光显示技术有限公司 Organic light emitting pixel drive circuit, drive method and organic light emitting display panel

Also Published As

Publication number Publication date
CN111044874A (en) 2020-04-21

Similar Documents

Publication Publication Date Title
US8963907B2 (en) Pixel circuit and driving method thereof
US11024228B2 (en) Pixel circuit, driving method therefor and display device
US8665185B2 (en) Pixel unit of organic light emitting diode and display panel for achieving stable brightness using the same
US10553153B2 (en) Method, circuit and display device for driving an organic light emitting diode
EP3163562B1 (en) Pixel circuit, display panel and display device
CN112509515B (en) Pixel circuit, display panel, display device and ambient light detection method
EP2800088B1 (en) Pixel unit drive circuit and drive method and display device thereof
CN107170400B (en) Electroluminescent display panel, detection method thereof and display device
CN101123069B (en) Organic light emitting display and driving method of inspection circuit of organic light emitting display
CN101859542B (en) Organic light emitting diode display device and organic light emitting diode pixel circuit thereof
CN101673511B (en) Organic light emitting display device with power saving function
CN111682058B (en) Display panel and display device
CN111710297B (en) Pixel driving circuit, driving method thereof and display panel
CN111599309A (en) Pixel driving circuit, organic light-emitting display panel and display device
US20150102990A1 (en) Gate driving circuit, and array substrate and display panel thereof
CN101819749B (en) Power supply unit and organic light emitting display device using same
CN111044874B (en) Display module, detection method and electronic equipment
US11935444B2 (en) Detection circuit, driving circuit, and display panel and driving method therefor
CN113823221B (en) Driving circuit of display panel, compensation method of display panel and display device
US11341898B2 (en) Pixel driving circuit, pixel driving method and display device
CN113436584B (en) Scanning control circuit, driving method thereof, shift register and display device
CN113241035B (en) Drive control circuit, drive method, shift register and display device
CN105702186A (en) Measuring method for testkey of AMOLED
US11978373B1 (en) Pixel detection device and pixel detection method
CN117409692A (en) Display panel detection circuit, detection method and display device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant