CN111003684B - The release hole is positioned in the packaging space encapsulation of MEMS devices within - Google Patents
The release hole is positioned in the packaging space encapsulation of MEMS devices within Download PDFInfo
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- CN111003684B CN111003684B CN201910157928.3A CN201910157928A CN111003684B CN 111003684 B CN111003684 B CN 111003684B CN 201910157928 A CN201910157928 A CN 201910157928A CN 111003684 B CN111003684 B CN 111003684B
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Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00269—Bonding of solid lids or wafers to the substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
Abstract
The present invention relates to a MEMS device assembly comprising: a MEMS device comprising an air gap structure; and a packaging film forming a packaging space for sealing the MEMS device, wherein: the MEMS device is provided with a first release hole communicated with the air gap structure, and the first release hole is positioned in the packaging space; the packaging film is provided with a second release hole, and the second release hole is filled with sealing materials; and in the vertical projection, the horizontal distance between at least one second release hole and the corresponding first release hole is smaller than 20um. The invention also relates to an electronic device with the MEMS device assembly, electronic equipment with the MEMS device assembly or the electronic device, and a packaging method of the MEMS device.
Description
Technical Field
Embodiments of the present invention relate to the field of semiconductors, and more particularly, to a MEMS device assembly, an electronic device having the MEMS device assembly, an electronic apparatus having the MEMS device assembly or the electronic device, and a method of packaging a MEMS device.
Background
Miniaturized, high performance thin film bulk acoustic wave (FBAR, film bulk acoustic resonator) bandpass filters are widely used in mobile wireless communication systems. The thin film bulk acoustic band-pass filter is a resonator based on a high Q value, which is a thickness extension mode using a piezoelectric aluminum nitride (AlN) thin film. The film bulk acoustic resonator mainly has the following three structures:
(1) And etching the back surface of the silicon. The bulk silicon micro-fabrication process is adopted to etch and remove most of silicon material from the back surface of the silicon wafer to form an air interface on the lower surface of the piezoelectric oscillation stack, thereby confining the sound wave within the piezoelectric oscillation stack. Since the large area of the silicon substrate is removed, the mechanical firmness of the device is affected and the yield is greatly reduced.
(2) An air gap type. In the adopted surface micro-manufacturing process, an air gap is formed on the upper surface of the silicon wafer to limit sound waves in the piezoelectric oscillation stack. The air gap can adopt a sinking type formed by removing part of the surface of the silicon wafer, or can be an upward convex type formed directly above the surface of the silicon without removing silicon. The FBARs can well limit sound waves to the piezoelectric oscillation stack to obtain a high Q value, and meanwhile, the surface micro-manufacturing process is adopted, and most silicon substrates are not required to be removed, so that the mechanical fastness of the FBARs is much better than that of the reverse etching type silicon wafer; furthermore, the lack of machining the opposite side of the silicon substrate makes this approach compatible with conventional silicon integrated circuit processes, with the possibility of integration.
(3) Solid state assembled (SMR, solidly mounted resonator). Unlike the former two, SMR uses Bragg reflection layers, typically W and SiO, to confine acoustic waves within a piezoelectric resonator stack 2 As acoustic layers of high and low impedance, because of W and SiO 2 The acoustic impedance is quite different between them and both materials are materials in standard CMOS processes. Its advantages are high mechanical strength, high integration and no need of process. However, the disadvantage is that the process cost is higher than that of the air gap type, and the acoustic wave reflection effect of the Bragg reflection layer is not good enough as that of air, so that the Q value of SMR is generally lower than that of the air gap type FBAR.
Fig. 1 and 2 are a top view and a cross-sectional view taken along A-A in the top view of a typical air-gap FBAR, respectively. Wherein 10 is the air gap structure of the resonator, 11 is the release hole of the air gap, 12 is the bottom electrode of the resonator, 13 is the piezoelectric layer of the resonator, and 14 is the top electrode of the resonator.
In general, thin film bulk acoustic resonators have specific packaging requirements under different application environments. For example, certain bulk acoustic wave resonators may operate optimally in certain environmental conditions, such as a certain range of humidity or pressure or in an inert gas. Furthermore, a particular bulk acoustic wave resonator may be sensitive to a particular contamination.
Fig. 3A-3E illustrate a thin film packaging process for a resonator in the prior art. As shown in the figure:
the known thin film packaging process is as follows:
1): FIG. 3A shows an air gap type film bulk acoustic resonator with good performance;
2): depositing a sacrificial layer 30 over the resonator, as shown in fig. 3B;
3): forming a packaging film 31 over the sacrificial layer as shown in fig. 3C;
4): forming an opening 32 in the encapsulation film 31 and releasing the sacrificial layer 30 to form an encapsulation cavity 33, as shown in fig. 3D;
5): a sealing layer 35 is formed on the encapsulation film 31 to seal the openings 32 in the encapsulation film 31, thereby sealing the encapsulation cavities 33, as shown in fig. 3E.
However, in the air gap type film bulk acoustic resonator, in the process of packaging, when the sacrificial layer 30 is released to form the packaging cavity 33, since the position of the opening 32 is located at the middle part of the film 31, the distance of the liquid medicine entering the packaging cavity 33 after entering the air gap 10 through the release hole 11 becomes longer, as shown by the arrow in fig. 3D. Therefore, the residue of the chemical solution or the like generated in the releasing process of the sacrifice layer 30 is easily retained in the air gap 10, and the performance of the resonator is deteriorated. Meanwhile, in the air gap type FBAR, a step 34 is present in the encapsulation film 34 formed above the release hole 11 of the air gap, and stability of the encapsulation structure is deteriorated due to a large stress concentration at the step. Moreover, the encapsulant may easily fall over the device from the opening 32 when the seal is finally made, resulting in poor performance of the resonator.
In existing packaging methods, such as bond packaging, a cover substrate is mounted over the device. One exemplary cover substrate is a dome or cap-shaped "cap" that can be positioned over each device and then secured to a support substrate. After being unitized, the devices may be packaged individually, e.g., in a housing, at the chip level. However, such packaging methods increase the overall size of the device and increase packaging costs due to the large number of packaging steps, while introducing particle contamination in the chip scale package. In another packaging method, such as film packaging, a sacrificial layer is firstly deposited above the device during processing, then a film is spin-coated as a packaging layer, channels are etched to form through the sacrificial layer, the sacrificial layer is released to form a cavity, and then a film is spin-coated to seal the cavity. The packaging method has the advantages of simple process, good sealing, low cost and compatibility with IC technology.
However, when the air gap FBAR is sealed by a thin film sealing method, a drug solution residue or the like is easily introduced into the air gap at the bottom of the device when the sealing cavity is released, which affects the performance of the device and lowers the Q value thereof.
The above-described problems also exist for packaging of other MEMS devices.
Disclosure of Invention
The present invention has been made to alleviate or solve the above-mentioned problems occurring in the prior art.
According to an aspect of an embodiment of the present invention, there is provided a thin film bulk acoustic resonator assembly comprising:
a MEMS device comprising an air gap structure; and
a packaging film for forming a packaging space for sealing the MEMS device,
wherein:
the MEMS device is provided with a first release hole communicated with the air gap structure, and the first release hole is positioned in the packaging space;
the packaging film is provided with a second release hole, and the second release hole is filled with sealing materials; and is also provided with
In the vertical projection, the horizontal distance between at least one second release hole and the corresponding first release hole is smaller than 20um.
Optionally, in a vertical projection, the second release hole coincides or partially coincides with the corresponding first release hole.
Optionally, in the vertical projection, a horizontal distance between each of the second release holes and the corresponding first release hole is within a range of less than 20um.
Optionally, the MEMS device assembly includes a sealing layer at least partially covering the encapsulation film, and a material constituting the sealing layer constitutes a sealing material filling the second release hole.
Optionally, the MEMS device comprises a bulk acoustic wave resonator. Further, the MEMS device includes a thin film bulk acoustic resonator.
In an alternative embodiment, the bulk acoustic wave resonator includes a bottom electrode, a piezoelectric layer, and a top electrode, the encapsulation film covers the bulk acoustic wave resonator, the assembly includes a sealing layer at least partially covering the encapsulation film, and a material constituting the sealing layer constitutes a sealing material filling the second release hole; and the material of the sealing layer is the same as that of the top electrode, and the material of the packaging film is the same as that of the piezoelectric layer. Further, the material of the sealing layer is selected from one of the following materials: silicon dioxide, polymers, spin-on glass, plastics, resins, dielectric materials, metals, silicon nitride, aluminum nitride, and the like; the material of the packaging film is selected from one of the following materials: silicon, silicon dioxide, silicon nitride, aluminum oxide, metals, photoresists, high molecular polymers, graphene, nanotubes, TOK DFR materials, and the like.
According to another aspect of an embodiment of the present invention, an electronic device is presented comprising a plurality of the MEMS device assemblies described above.
Optionally, at least two of the MEMS device assemblies have a common first release aperture. Further, at least two MEMS devices are packaged in one package space formed by one piece of packaging film.
Optionally, the electronic device includes at least two packaging spaces, each packaging space is formed by a layer of packaging film, and at least two MEMS devices are packaged in at least one packaging space.
Optionally, the electronic device comprises a filter.
According to a further aspect of embodiments of the present invention, an electronic device is presented, comprising the electronic device described above or the MEMS device assembly described above.
According to a further aspect of an embodiment of the present invention, there is provided a method of packaging a MEMS device, the resonator comprising an air gap structure and being provided with a first release hole communicating with the air gap structure, the method comprising the steps of:
forming a packaging space for sealing the MEMS device by using a packaging film, wherein the first release hole is positioned in the packaging space;
the packaging film is provided with a second release hole communicated with the packaging space, and the position of at least one second release hole is set in a range that the horizontal distance between at least one second release hole and the corresponding first release hole is smaller than 20um in vertical projection; and
sealing the second release hole.
Drawings
These and other features and advantages of the various embodiments of the disclosed invention will be better understood from the following description taken in conjunction with the accompanying drawings, in which like reference characters designate like parts throughout the several views, and wherein:
FIG. 1 is a schematic top view of a prior art thin film bulk acoustic resonator;
FIG. 2 is an A-B cross-sectional view of the resonator of FIG. 1;
FIGS. 3A-3E are flow charts of thin film packaging of a thin film bulk acoustic resonator in the prior art;
FIG. 4A is a schematic top view of a thin film bulk acoustic resonator according to an exemplary embodiment of the present invention;
FIG. 4B is a schematic cross-sectional view taken along line A-A of FIG. 4A;
FIG. 4C is a schematic illustration of the resonator of FIG. 4A after a sealing layer is disposed thereon;
FIG. 5A is a schematic top view of a thin film bulk acoustic resonator according to an exemplary embodiment of the present invention;
FIG. 5B is a schematic cross-sectional view taken along line A-A in FIG. 5A;
FIG. 5C is a schematic illustration of the resonator of FIG. 5A after a sealing layer is disposed thereon;
FIG. 6A is a schematic top view of a filter according to an exemplary embodiment of the invention;
FIG. 6B is a schematic cross-sectional view taken along line A-A in FIG. 6A;
FIG. 6C is a schematic diagram of the filter of FIG. 6A after a sealing layer is disposed thereon;
FIG. 6D is a schematic diagram illustrating resonator package in a filter;
fig. 7 is a schematic cross-sectional view showing a thin film package of a thin film bulk acoustic resonator according to an exemplary embodiment of the present invention.
Detailed Description
The technical scheme of the invention is further specifically described below through examples and with reference to the accompanying drawings. In the specification, the same or similar reference numerals denote the same or similar components. The following description of embodiments of the present invention with reference to the accompanying drawings is intended to illustrate the general inventive concept and should not be taken as limiting the invention.
A MEMS device assembly according to an embodiment of the present invention will be exemplarily described below with reference to the accompanying drawings by taking a thin film package of a thin film bulk acoustic resonator as an example.
FIG. 4A is a schematic top view of a thin film bulk acoustic resonator according to an exemplary embodiment of the present invention; FIG. 4B is a schematic cross-sectional view taken along line A-A of FIG. 4A; fig. 4C is a schematic view of the resonator shown in fig. 4A after a sealing layer is provided thereon.
In the embodiment shown in fig. 4A, a top view of the air gap type thin film bulk acoustic resonator thin film package is shown. Wherein 10 is an air gap structure at the bottom of the FBAR, 11 is a release hole (corresponding to a first release hole, whose size may be typically 10 um) of the air gap 10, 12 is a bottom electrode of the resonator, 14 is a top electrode of the resonator, 31 is an encapsulation film, and 32 is a release opening (corresponding to a second release hole) of the encapsulation film 31. The release opening 32 of the encapsulation film 31 overlaps the release hole 11 of the resonator bottom air gap in vertical projection (more specifically, see fig. 4B).
In fig. 4B, 10 is the air gap at the bottom of the resonator, and 11 is the release hole of the air gap at the bottom of the resonator; 12 is the bottom electrode of the resonator, 13 is the piezoelectric layer of the resonator, and 14 is the top electrode of the resonator; 31 is the encapsulation film, 32 is the release opening in the encapsulation film, and 33 is the cavity under the encapsulation film. The thickness of the encapsulation film 31 may be 1-10um, typically 3um, and the height of the cavity above the resonator may be 0.1-10um.
In the embodiment of the invention, since the release hole on the packaging film 31 is overlapped with the release hole 11 of the air gap at the bottom of the resonator in the vertical direction, in the process of forming the packaging space 33, the liquid medicine can flow out in a rapid circulation manner after entering the air gap at the bottom of the resonator through the release hole 11, and residues of the liquid medicine and the like are taken away, so that the possibility that residues of the liquid medicine remain in the air gap is reduced, as shown by an arrow in fig. 4B, and the performance of the resonator is improved; meanwhile, since the openings 32 of the encapsulation film 31 are on both sides of the effective region of the resonator, the performance of the resonator is not affected even if the sealing agent falls down when the openings of the encapsulation film are finally sealed. Moreover, since the position of the opening of the encapsulation film 31 is located right above the release hole 11 of the air gap 10, no step is generated there and no stress is accumulated when the encapsulation film is formed, so that the encapsulation structure of the resonator is more stable.
After the package space 33 above the resonator is formed, a sealing layer is finally formed on the packaging film 31, such as 41 in fig. 4C, the opening 32 on the packaging film 31 is sealed, and finally a sealed package space 33 is formed above the resonator, so that the film bulk acoustic resonator is sealed. Wherein the thickness of the sealing layer may be 10-50um.
FIG. 5A is a schematic top view of a thin film bulk acoustic resonator according to an exemplary embodiment of the present invention; FIG. 5B is a schematic cross-sectional view taken along line A-A in FIG. 5A; fig. 5C is a schematic view of the resonator shown in fig. 5A after a sealing layer is provided thereon.
In the embodiment shown in fig. 5A, there is a top view of another air gap type thin film bulk acoustic resonator thin film package. Wherein 10 is the air gap structure at the bottom of the resonator, 11 is the release hole of the air gap at the bottom of the resonator; 12 is the bottom electrode of the resonator and 14 is the top electrode of the resonator; 31 is a packaging film, and 32 is an opening in the packaging film 31. Wherein the opening 32 in the encapsulation film 31 does not overlap the resonator bottom air gap release hole 11 in the vertical direction, but is horizontally very close, in the range of less than 40um, preferably in the range of less than 20um.
In fig. 5B, the opening 32 in the encapsulation film 31 does not overlap the release hole 11 of the resonator bottom air gap 10 in the vertical direction, but is horizontally closely spaced, for example in the distance range mentioned above. This allows the liquid medicine flowing in through the opening 32 during the release of the film-packed cavity 33, after passing through the resonator bottom air gap 10, to circulate out rapidly, is favorable for carrying away the liquid medicine residues and the like, as shown by arrows in fig. 5B, thereby reducing the influence of the liquid medicine residues on the performance of the resonator.
Moreover, since the position of the opening 32 on the encapsulation film 31 is located outside the effective area of the resonator, the performance of the resonator is not affected even if the sealing agent falls down when the encapsulation film is finally sealed.
After the package space 33 above the resonator is formed, a sealing layer is finally formed on the packaging film 31, such as 41 in fig. 5C, the opening 32 on the packaging film 31 is sealed, and finally a sealed package space 33 is formed above the resonator, so that the film bulk acoustic resonator is sealed.
FIG. 7 is a schematic cross-sectional view of a thin film package showing a thin film bulk acoustic resonator according to an exemplary embodiment of the present invention, wherein 10 is the bottom air gap structure of the resonator and 11 is the release hole of the bottom air gap of the resonator; 12 is the bottom electrode of the resonator, 13 is the piezoelectric layer of the resonator, and 14 is the top electrode of the resonator; 31 is the encapsulation film, 32 is the opening in the encapsulation film, 33 is the encapsulation space at the top of the resonator, 34 is the sealing layer. In this embodiment, the open hole positions on the encapsulation film are located on both sides of the encapsulation film and overlap with the release holes of the air gap at the bottom of the resonator in the vertical direction or are smaller than 20um in the horizontal distance.
As will be appreciated by those skilled in the art, although the above embodiments illustrate thin film packages with thin film bulk acoustic resonators, the thin film packages may be adapted for use in other MEMS devices that include air gap structures.
Based on the above, the present invention proposes a MEMS device assembly comprising:
a MEMS device comprising an air gap structure 10; and
an encapsulation film 31 forming an encapsulation space 33 enclosing the resonator,
wherein:
the resonator is provided with a first release hole (corresponding to release hole 11) communicating with the air gap structure 10, the first release hole being located in the encapsulation space;
the encapsulation film is provided with a second release hole (corresponding to the opening 32) filled with a sealing material; and is also provided with
In the vertical projection, the horizontal distance between at least one second release hole and the corresponding first release hole is smaller than 20um.
Based on the above, the present invention also provides a packaging method of a MEMS device, where the MEMS device includes an air gap structure and is provided with a first release hole communicating with the air gap structure, and the method includes the steps of:
forming a packaging space for sealing the MEMS device by using a packaging film, wherein the first release hole is positioned in the packaging space;
a second release hole communicated with the packaging space is formed in the packaging film, and the position of at least one second release hole is set to be smaller than 20um in horizontal distance between at least one second release hole and the corresponding first release hole in vertical projection; and
sealing the second release hole.
FIG. 6A is a schematic top view of a filter (e.g., a ladder filter) according to an exemplary embodiment of the invention; FIG. 6B is a schematic cross-sectional view taken along line A-A in FIG. 6A; FIG. 6C is a schematic diagram of the filter of FIG. 6A after a sealing layer is disposed thereon; fig. 6D is a schematic diagram illustrating resonator package in a filter.
In the embodiment shown in fig. 6A, the filter is composed of an air-gap FBAR in a ladder structure, i.e., each stage is composed of one series resonator and one parallel resonator, wherein 61 and 62 are series resonators, and 63 is a parallel resonator; 11 is a release hole of an air gap at the bottom of the resonator, 31 is an encapsulation film, and 32 is an open pore structure of the encapsulation film. In this embodiment, the opening in the packaging film 32 coincides with the release hole 11 of the air gap at the bottom of the resonator in the vertical direction, so that the effect of the generated residue of the liquid medicine on the air gap at the bottom of the resonator is reduced as much as possible when the film packaging cavity is released, so that the effect on the performance of the resonator is reduced.
In fig. 6B, 10 is the air gap structure at the bottom of the resonator, and 11 is the release hole of the air gap at the bottom of the resonator; 12 is the bottom electrode of the resonator, 13 is the piezoelectric layer of the resonator, and 14 is the top electrode of the resonator; 31 is the encapsulation film structure, 32 is the opening on the encapsulation film, and 33 is the cavity structure under the encapsulation film.
After the package space 33 above the resonator is formed, a sealing layer is finally formed on the packaging film 31, such as 41 in fig. 6C, the opening 32 on the packaging film 31 is sealed, and finally a closed space 33 is formed above the resonator, so that the film bulk acoustic resonator is hermetically packaged.
When the number of resonators constituting the filter increases, if each resonator is individually packaged, electrical connection between the resonators becomes long, and thus electrical loss of the filter increases; if the filter is integrally packaged, the cavity formed by the packaging film is easy to collapse due to the overlarge area, so that the performance of the filter is deteriorated. Therefore, when the filters are packaged in a plurality of packages, the filters may be packaged singly, or two or three together, so that the above problems can be effectively avoided, as shown in fig. 6D. Meanwhile, in fig. 6C, the opening 32 of the packaging film 31 overlaps the release hole 11 of the air gap at the bottom of the resonator in the thickness direction, so that the generated liquid medicine residue is left in the cavity at the bottom of the resonator in the forming process of the cavity above the resonator can be effectively reduced, thereby being beneficial to improving the performance of the resonator.
It should be noted that the embodiments of fig. 6A-6C of the present invention are described by way of example in terms of thin film packaging of a filter, however, those skilled in the art will appreciate that the thin film packaging described above is not limited to application to filters. Based on this, an embodiment of the present invention also proposes an electronic device comprising a plurality of the MEMS device assemblies described above. Optionally, at least two of the MEMS device assemblies have a common first release aperture. Further, at least two MEMS devices are packaged in one package space formed by one layer of packaging film.
Optionally, the electronic device includes at least two packaging spaces, each packaging space is formed by a layer of packaging film, and at least two MEMS devices are packaged in at least one packaging space.
In the present invention, the electrode constituent material may be formed of gold (Au), tungsten (W), molybdenum (Mo), platinum (Pt), ruthenium (Ru), iridium (Ir), titanium Tungsten (TiW), aluminum (Al), titanium (Ti), or the like.
The piezoelectric layer material may be aluminum nitride (AlN), zinc oxide (ZnO), lead zirconate titanate (PZT), lithium niobate (LiNbO 3), quartz (Quartz), potassium niobate (KNbO 3), lithium tantalate (LiTaO 3), or the like.
The sacrificial layer material can be organic material, polymer, silicon, amorphous silicon, silicon dioxide, PSG, metal (such as Ge, ti, cu), metal oxide (such as MgO, znO), photoresist (such as SU-8), and the like.
The packaging film material can be silicon, silicon dioxide, silicon nitride, aluminum oxide, metal, photoresist, high molecular polymer, graphene, nanotube, TOK DFR material and the like;
the sealing layer material can be silicon dioxide and other compact materials, polymers, spin-on glass, plastics, resins, dielectric materials, metals, silicon nitride, aluminum nitride and other materials.
In an alternative embodiment, the material of the sealing layer is the same as the material of the top electrode and the material of the encapsulation film is the same as the material of the piezoelectric layer. More specifically, the material of the sealing layer is selected from one of the following materials: silicon dioxide, polymers, spin-on glass, plastics, resins, dielectric materials, metals, silicon nitride, aluminum nitride, and the like; the material of the packaging film is selected from one of the following materials: silicon, silicon dioxide, silicon nitride, aluminum oxide, metals, photoresists, high molecular polymers, graphene, nanotubes, TOK DFR materials, and the like. In addition, the sacrificial layer forming the air gap structure and the sacrificial layer forming the packaging space may be made of the same material, and the material is selected from one of the following materials: organic materials, polymers, silicon, amorphous silicon, silicon dioxide, PSG, metals (e.g., ge, ti, cu), metal oxides (e.g., mgO, znO), photoresists (e.g., SU-8), and the like.
In the present invention, the expression "vertical projection" is used, as shown in fig. 4B, and it should be understood that projection is performed in the thickness direction of the resonator. The "coincidence" in the present invention is on the same vertical projection line or substantially on the same vertical projection line.
Although not shown, embodiments of the present invention also relate to an electronic apparatus including the MEMS device assembly described above or the electronic device described above.
Although embodiments of the present invention have been shown and described, it would be appreciated by those skilled in the art that changes may be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the claims and their equivalents.
Claims (18)
1. A MEMS device assembly comprising:
a MEMS device comprising an air gap structure; and
a packaging film for forming a packaging space for sealing the MEMS device,
wherein:
the MEMS device is provided with a first release hole communicated with the air gap structure, and the first release hole is positioned in the packaging space;
the packaging film is provided with a second release hole, and the second release hole is filled with sealing materials; and is also provided with
In vertical projection, the horizontal distance between at least one second release hole and the corresponding first release hole is smaller than 20um;
the MEMS device component comprises a sealing layer which at least partially covers the packaging film, and the material composing the sealing layer forms sealing material filling the second release hole.
2. The assembly of claim 1, wherein:
in a vertical projection, the second release hole coincides with the corresponding first release hole.
3. The assembly of claim 1, wherein:
in a vertical projection, the second release holes partially coincide with the corresponding first release holes.
4. The assembly of claim 1, wherein:
in the vertical projection of the image, in the vertical projection, the horizontal spacing between each of the second release holes and the corresponding first release hole is in the range of less than 20um.
5. The assembly of any one of claims 1-4, wherein:
the MEMS device includes a bulk acoustic wave resonator.
6. The assembly of claim 5, wherein:
the MEMS device includes a thin film bulk acoustic resonator.
7. The assembly of claim 5, wherein:
the bulk acoustic wave resonator comprises a bottom electrode, a piezoelectric layer and a top electrode, the packaging film covers the bulk acoustic wave resonator, the assembly comprises a sealing layer at least partially covering the packaging film, and the material composing the sealing layer forms sealing material filling the second release hole; and is also provided with
The material of the sealing layer is the same as that of the top electrode, and the material of the packaging film is the same as that of the piezoelectric layer.
8. The assembly of claim 7, wherein:
the material of the sealing layer is selected from one of the following materials: silicon dioxide, polymers, spin-on glass, plastics, resins, dielectric materials, metals, silicon nitride, aluminum nitride;
the material of the packaging film is selected from one of the following materials: silicon, silicon dioxide, silicon nitride, aluminum oxide, metal, photoresist, high molecular polymer, graphene, nanotubes, and TOK DFR materials.
9. An electronic device comprising a plurality of MEMS device assemblies according to any of claims 1-8.
10. The electronic device of claim 9, wherein:
at least two of the MEMS device assemblies have a common first release aperture.
11. The electronic device of claim 10, wherein:
at least two MEMS devices are packaged in a packaging space formed by a layer of packaging film.
12. The electronic device of claim 9, wherein:
the electronic device comprises at least two packaging spaces, wherein each packaging space is formed by a layer of packaging film, and at least two MEMS devices are packaged in at least one packaging space.
13. The electronic device of any of claims 9-12, wherein:
the electronic device includes a filter.
14. An electronic device comprising an electronic device according to any of claims 9-13 or a MEMS device assembly according to any of claims 1-7.
15. A method of packaging a MEMS device, the MEMS device comprising an air gap structure and being provided with a first release aperture in communication with the air gap structure, the method comprising the steps of:
forming a packaging space for sealing the MEMS device by using a packaging film, wherein the first release hole is positioned in the packaging space;
the packaging film is provided with second release holes communicated with the packaging space, so that the position of at least one second release hole is set to be in a vertical projection, and the horizontal distance between at least one second release hole and the corresponding first release hole is in a range of less than 20um; and
sealing the second release hole.
16. The method according to claim 15, wherein:
in a vertical projection, the second release holes coincide or partially coincide with the corresponding first release holes.
17. The method according to claim 15, wherein:
the air gap structure is formed by releasing the first sacrificial layer, and the packaging space is formed by releasing the second sacrificial layer; and is also provided with
The first sacrificial layer and the second sacrificial layer are made of the same material and are selected from one of the following materials: organic materials, polymers, silicon, amorphous silicon, silicon dioxide, PSG, metals, metal oxides, photoresists.
18. The method according to claim 17, wherein:
the MEMS device is a bulk acoustic wave resonator and comprises a bottom electrode, a piezoelectric layer and a top electrode, the packaging film covers the bulk acoustic wave resonator, the MEMS device comprises a sealing layer at least partially covering the packaging film, and the material forming the sealing layer forms a sealing material for filling the second release hole; and is also provided with
The material of the sealing layer is the same as that of the top electrode, and is selected from one of the following materials: silicon dioxide, polymers, spin-on glass, plastics, resins, dielectric materials, metals, silicon nitride, aluminum nitride; and is also provided with
The material of the packaging film is the same as that of the piezoelectric layer, and is selected from one of the following materials: silicon, silicon dioxide, silicon nitride, aluminum oxide, metal, photoresist, high molecular polymer, graphene, nanotubes, and TOK DFR materials.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910157928.3A CN111003684B (en) | 2019-03-02 | 2019-03-02 | The release hole is positioned in the packaging space encapsulation of MEMS devices within |
| PCT/CN2020/076207 WO2020177557A1 (en) | 2019-03-02 | 2020-02-21 | Package for mems device of which release hole is arranged in packaging space |
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| CN201910157928.3A CN111003684B (en) | 2019-03-02 | 2019-03-02 | The release hole is positioned in the packaging space encapsulation of MEMS devices within |
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| WO2022088015A1 (en) * | 2020-10-30 | 2022-05-05 | 京东方科技集团股份有限公司 | Ultrasonic transducer unit and manufacturing method therefor |
| CN115106274A (en) * | 2022-06-14 | 2022-09-27 | 北京海创微芯科技有限公司 | MEMS transducer and manufacturing method thereof |
| CN117040478B (en) * | 2023-10-08 | 2024-01-30 | 深圳新声半导体有限公司 | BAW filter, manufacturing method thereof, integrated circuit and electronic equipment |
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| JP4791766B2 (en) * | 2005-05-30 | 2011-10-12 | 株式会社東芝 | Semiconductor device using MEMS technology |
| CN101465628B (en) * | 2009-01-15 | 2011-05-11 | 电子科技大学 | Film bulk acoustic wave resonator and preparation method thereof |
| WO2011114628A1 (en) * | 2010-03-18 | 2011-09-22 | パナソニック株式会社 | Mems element, and manufacturing method of mems element |
| US20130119489A1 (en) * | 2011-11-11 | 2013-05-16 | Qualcomm Incorporated | Method and apparatus for wafer-level solder hermetic seal encapsulation of mems devices |
| US8629036B2 (en) * | 2011-11-11 | 2014-01-14 | International Business Machines Corporation | Integrated semiconductor devices with amorphous silicon beam, methods of manufacture and design structure |
| US8910355B2 (en) * | 2011-12-12 | 2014-12-16 | International Business Machines Corporation | Method of manufacturing a film bulk acoustic resonator with a loading element |
| JP6331552B2 (en) * | 2014-03-25 | 2018-05-30 | セイコーエプソン株式会社 | MEMS device and manufacturing method thereof |
| CN104507014B (en) * | 2014-12-26 | 2018-08-28 | 上海集成电路研发中心有限公司 | A kind of MEMS microphone and its manufacturing method with fold-type vibrating membrane |
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| CN109088614A (en) * | 2018-06-28 | 2018-12-25 | 深圳华远微电科技有限公司 | SAW filter and its packaging method and electronic equipment |
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