CN110989076B - Thin-film lithium niobate single polarization waveguide and preparation method thereof - Google Patents
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
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- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/126—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind using polarisation effects
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G02B2006/1204—Lithium niobate (LiNbO3)
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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Abstract
The invention discloses a thin-film lithium niobate single polarization waveguide and a preparation method thereof, belonging to the field of integrated photonics. The waveguide comprises an upper cladding, a lithium niobate thin film waveguide core layer, a lower cladding and a substrate layer from top to bottom; the lithium niobate thin film waveguide core layer comprises a ridge waveguide and groove-shaped regions positioned on two sides of the ridge waveguide; the width and the etching depth of the ridge waveguide are smaller than cut-off values of a TM0 mode, and the TM0 mode in the ridge waveguide is in cross coupling with the TE1 mode in the groove region; the width of the slot region is such that the TE1 mode coupled from the TM0 mode in the ridge waveguide into the two side slot regions is coherently constructive with the TM0 mode leaking into the slot regions. And obtaining the waveguide structure only supporting the TE0 mode stable transmission by optimizing the geometric parameters of the micro-nano optical waveguide structure. The thin-film lithium niobate single-polarization waveguide has strong optical field limiting capacity, improves the integration level of devices and simplifies the process flow.
Description
Technical Field
The invention belongs to the field of integrated photonics, and particularly relates to a thin-film lithium niobate single-polarization waveguide and a preparation method thereof.
Background
Microelectronic technologies represented by very large scale integrated circuits have been developed to an extremely high level, and one of the directions for further improving the performance of integrated circuits is to introduce light with higher propagation speed and larger information capacity into the integrated circuits to form optoelectronic integration. In the field of integrated photonics, devices used to process polarization states are key devices that make up polarization dependent integrated optical circuits. The design of the single polarization waveguide is compatible with the design and process method of other integrated photonics devices, and when the waveguides of the integrated optical circuit are all designed by adopting the single polarization waveguide, the signal light of the TE0 mode in the whole integrated optical circuit will occupy the absolute dominant position. The polarization extinction ratio of more than 30dB can be realized by adopting a conventional SLED light source as an input light source. Thin-film lithium niobate single polarization waveguides are adopted, and devices such as a thin-film lithium niobate phase modulator, a thin-film lithium niobate coupler and the like can be integrated on the same chip. The most typical application scenario is an integrated fiber optic gyroscope, the design of the thin-film lithium niobate single-polarization waveguide can realize high polarization extinction ratio, reduce the influence of noise optical signals in a transmission optical path, improve the sensitivity of the Sagnac interference ring, realize large-bandwidth rapid modulation, and meanwhile, the whole system occupies a small size.
In the prior art, methods for realizing the thin-film lithium niobate single polarization waveguide mainly include an annealing proton exchange method and a titanium diffusion waveguide method. The thin film lithium niobate single polarization waveguide manufactured by the traditional methods has weak limit capacity on an optical field, and the bending radius of the thin film lithium niobate single polarization waveguide is very large. In addition, the process flow for manufacturing the single polarization waveguide by adopting the traditional methods is complex, and the traditional CMOS semiconductor manufacturing process cannot be compatible, so that large-scale dense integration is difficult to realize. With the development trend of miniaturization and integration of the existing optical waveguide device, it is urgently needed to provide a thin-film lithium niobate single-polarization waveguide process scheme with higher integration level and simple flow to further promote the commercial application of products.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a thin-film lithium niobate single-polarization waveguide and a preparation method thereof, and aims to solve the problems that the existing lithium niobate single-polarization waveguide is difficult to integrate densely on a large scale and the process flow is relatively complex.
In order to achieve the purpose, the invention provides a thin film lithium niobate single polarization waveguide, which comprises an upper cladding, a lithium niobate thin film waveguide core layer, a lower cladding and a substrate layer from top to bottom, wherein the refractive indexes of the upper cladding and the lower cladding are respectively smaller than that of the lithium niobate thin film waveguide core layer, and the lithium niobate thin film waveguide core layer comprises a ridge waveguide and groove-shaped regions positioned on two sides of the ridge waveguide;
wherein, the width and the etching depth of the ridge waveguide are smaller than the cut-off values of a TM0 mode, so that the TM0 mode in the ridge waveguide is cross-coupled with the TE1 mode in the groove region;
the width of the slot region is such that the TE1 mode coupled from the TM0 mode in the ridge waveguide into the two side slot regions is coherently constructive with the TM0 mode leaking into the slot region.
Further, the width of the ridge waveguide is 800nm, the etching depth is 140nm, and the width of the groove-shaped region is 4.2 μm.
Further, under the condition of 1310nm wavelength, the refractive index of the lithium niobate thin film waveguide core layer to o light is 2.15, and the refractive index to e light is 2.22; the refractive index of the upper cladding and the lower cladding is 1.46.
Further, the thickness of the substrate layer is 500 μm, the thickness of the lower cladding layer is 4.7 μm, the total thickness of the lithium niobate thin film waveguide core layer is 400nm, and the thickness of the upper cladding layer is 4 μm.
Furthermore, the material of the lithium niobate thin film waveguide core layer is a lithium niobate thin film material with a single crystal structure, and the thickness of the lithium niobate thin film waveguide core layer is 200nm-4000 nm.
Preferably, the material of the upper cladding layer is silicon dioxide, silicon nitride or air.
Preferably, the thickness of the lower cladding layer is more than 1 μm, and the material is silicon dioxide, silicon nitride or silicon oxynitride.
The invention also provides a preparation method of the thin-film lithium niobate single polarization waveguide, which comprises the following steps:
s1, preparing a graphical etching hard mask on the thin film lithium niobate through photoetching;
s2, removing partial lithium niobate materials on two sides of the ridge waveguide by dry etching by means of an etching hard mask;
s3, removing the etching hard mask;
and S4, covering a low-refractive index cladding material above the ridge waveguide.
Further, in the step S2, the hard mask is a metal material or an etching-resistant electronic glue.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
(1) devices such as a lithium Niobate waveguide coupler, a lithium Niobate waveguide modulator and the like are integrated On the same waveguide platform LNOI (lithonium Niobate On chip), and a complex system can be formed by utilizing the excellent electro-optic effect and nonlinear effect of lithium Niobate On the premise of ensuring the single polarization characteristic of the LNOI platform;
(2) compared with a bulk material lithium niobate single polarization waveguide, the thin film lithium niobate single polarization waveguide has strong optical field limiting capacity, can greatly reduce the section size of the waveguide, reduce the bending radius of the waveguide and improve the integration level of devices.
(3) The preparation method of the single polarization waveguide only needs to carry out one-time dry etching on the thin film lithium niobate, simplifies the process flow, is compatible with the conventional semiconductor processing technology, can reduce the cost and improve the batch production capacity of devices.
Drawings
FIG. 1 is a front view of a thin-film lithium niobate single polarization waveguide of the present embodiment;
fig. 2 is a top view of the thin-film lithium niobate single polarization waveguide of the present embodiment.
Fig. 3 is a schematic diagram of the relationship between the transmittance of the thin-film lithium niobate single polarization waveguide TM0 mode and the width of the groove region.
Fig. 4(a) and 4(b) are respectively a TE0 mode field and a TM0 mode field transmission diagram of the thin film lithium niobate single polarization waveguide of the present embodiment at a length of 50 μm.
Fig. 5 is a process flow diagram of the thin-film lithium niobate single polarization waveguide of the present embodiment.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The invention provides a waveguide and a preparation method thereof for realizing a thin-film lithium niobate single-polarization integrated optical circuit. By optimizing the waveguide structure, size and refractive index of upper and lower medium cladding, the waveguide only supports stable transmission of a TE0 mode, and transmission loss of a TM0 mode and other high-order modes is extremely large, so that single TE0 mode transmission is obtained at the output end of the waveguide.
The invention mainly adopts a thin film lithium niobate single polarization waveguide structure which is composed of an upper cladding layer, a lithium niobate thin film waveguide core layer, a lower cladding layer and a substrate layer which are made of low refractive index materials on the thin film lithium niobate from top to bottom in sequence. In the waveguide core layer cladding structure, the thin film lithium niobate is a high-refractive-index material, and the upper cladding layer and the lower cladding layer are low-refractive-index materials. When the width and the etching depth of the ridge waveguide are smaller than the cut-off value existing in the TM0 mode, namely the theoretical maximum value, the TM0 mode in the thin-film lithium niobate ridge waveguide and the TE1 mode in the groove regions on both sides of the thin-film lithium niobate ridge waveguide are cross-coupled, so that the TM0 component in the thin-film lithium niobate ridge waveguide leaks out of the thin-film lithium niobate ridge waveguide. By optimally designing the optimal width of the groove-shaped regions at two sides, the TE1 mode coupled from the TM0 mode in the ridge waveguide to the groove-shaped regions at two sides and the TM0 mode leaked to the groove-shaped regions are coherent and long, so that the TM0 mode loss in the thin film lithium niobate ridge waveguide reaches the maximum value, the TM0 mode is eliminated, and the purpose of the single polarization thin film lithium niobate ridge waveguide is realized. Regarding the specific geometric parameter design, the ridge width and the etching depth of the thin film lithium niobate waveguide core layer can be determined by frequency domain simulation of the waveguide section, the width of the groove-shaped regions at two sides of the waveguide can be determined by time domain simulation method by scanning different parameters, and the specific parameter design method such as this is not described herein again.
Example 1
Fig. 1-2 are schematic structural diagrams of the thin-film lithium niobate single polarization waveguide of the present embodiment. The thin-film lithium niobate single polarization waveguide of the present embodiment includes an upper cladding layer 1 of silicon nitride on the thin-film lithium niobate, a thin-film lithium niobate waveguide core layer 2, a lower cladding layer 3 of silica, and a quartz substrate 4, which are sequentially arranged from top to bottom. The main structure of this embodiment is a thin film lithium niobate ridge waveguide for X-cut Y-pass. Preferably, the same single polarization waveguide design is used for the entire single polarization optical loop.
The ridge width W1 and the etching depth H2 of the thin film lithium niobate waveguide core layer were determined by FDE simulation, and the widths of the grooves on both sides of the waveguide were determined by FDTD simulation. The total thickness H1 of the lithium niobate thin film is a fixed value. When the width W1 and the etch depth H2 are smaller than their theoretical maximum values, the TM0 mode in the thin film lithium niobate ridge waveguide will cross-couple with the TE1 mode in the trench regions on both sides of the ridge waveguide, thereby allowing the TM0 component in the ridge waveguide to leak out of the ridge waveguide. Furthermore, the optimal width W2 of the groove regions on the two sides is found through simulation, so that a TE1 mode coupled from the TM0 mode in the thin-film lithium niobate ridge waveguide to the groove regions on the two sides and a TM0 mode leaked to the groove regions are coherent and long, the TM0 mode loss in the thin-film lithium niobate ridge waveguide is maximized, the TM0 mode is eliminated, and the purpose of the single-polarization thin-film lithium niobate ridge waveguide is achieved. As shown in fig. 3, the width of the groove region corresponding to the point where the mode transmittance of the thin-film lithium niobate single polarization waveguide TM0 is minimum, that is, the leakage loss is maximum, is approximately 4.25 μm.
The preparation method of the thin film lithium niobate single polarization ridge waveguide of the embodiment comprises the following steps:
s1: preparing a thin film Lithium Niobate (LNOI) on insulator;
s2: covering a layer of HSQ (hydrogen silsesquioxane) on the lithium niobate film in a spin coating manner, and exposing groove-shaped areas on two sides of the ridge waveguide convex structure on the HSQ;
s3: etching a mask on the HSQ by adopting a dry etching method;
s4: etching the groove-shaped area by using a mask and adopting a dry etching method to prepare a thin film lithium niobate ridge waveguide;
s5: an upper cladding layer of silicon nitride is deposited over the ridge waveguide using Low Pressure Chemical Vapor Deposition (LPCVD).
In the specific implementation process, light with a wavelength of 1310nm is input into the thin-film lithium niobate single-polarization waveguide, the TE0 mode is normally transmitted in the core layer of the thin-film lithium niobate ridge waveguide with a high refractive index, and the TM0 mode in the thin-film lithium niobate is coupled and leaked with the groove regions on two sides of the thin-film lithium niobate ridge waveguide, so that the light transmitted in the thin-film lithium niobate ridge waveguide is the light of the TE0 mode with a high polarization extinction ratio. Fig. 4(a) and 4(b) are graphs of the transmission of the TE0 mode field and the TMO mode field of the thin-film lithium niobate single-polarization waveguide of the present embodiment at a length of 50 μm, where fig. 4(a) and 4(b) respectively show the power of the TE0 mode and the TM0 mode as a function of the transmission distance, and it can be seen that the TE0 mode field transmission has no leakage loss, and the TM0 mode gradually attenuates during the transmission process.
In this example, the width of the thin film lithium niobate ridge waveguide was 800nm, the etching depth was 140nm, and the width of the groove on both sides of the thin film lithium niobate ridge waveguide was 4.2 μm.
Example 2
Fig. 1-2 are schematic structural diagrams of the thin-film lithium niobate single-polarization waveguide of this embodiment. The thin-film lithium niobate single polarization waveguide of the present embodiment includes, sequentially from top to bottom, a silica upper cladding layer on the thin-film lithium niobate, a thin-film lithium niobate ridge waveguide core layer, a silica lower cladding layer, and a silicon substrate. The main structure of this embodiment is a thin film lithium niobate ridge waveguide for X-cut Y-pass.
The preparation method of the thin film lithium niobate single polarization ridge waveguide of the embodiment comprises the following steps:
s1, preparing a thin film Lithium Niobate (LNOI) on an insulator
S2: covering a layer of metal material on the lithium niobate thin film by adopting conventional EBE (Electron Beam evolution, EBE), and exposing groove-shaped areas on two sides of the ridge waveguide convex structure on the metal material;
s3: etching a mask on the metal material by adopting a dry etching method;
s4: etching the groove-shaped area by using a mask and adopting a dry etching method to prepare a thin film lithium niobate ridge waveguide;
s5: a silicon dioxide upper cladding is coated on the ridge waveguide by Plasma Enhanced Chemical Vapor Deposition (PECVD).
Simulation results show that the waveguide of the structure supports 1 mode number, 1.88 effective refractive index, 1310nm wavelength, 0.1dB/cm loss and 100% TE0 polarization component.
The performance of the thin film lithium niobate single polarization ridge waveguide is tested. During testing, the thin-film lithium niobate single-polarization ridge waveguide in this embodiment adopts horizontal coupling, and the coupling end surface is a Taper Size Converter (SSC). The actual performance test results show that when laser with a wavelength of 1310nm is input, the loss of the thin film lithium niobate single polarization ridge waveguide is 1dB/cm, and when the input optical fiber is rotated, the mode input to the thin film lithium niobate ridge waveguide is continuously changed from TE0 to TM 0. The maximum and minimum power output values obtained in this way differ by 23dB, i.e. the polarization extinction ratio of the thin film lithium niobate single polarization ridge waveguide is 23 dB. In the design of the lithium niobate single polarization waveguide by dry etching, the refractive index difference (0.67) between the core layer (lithium niobate) and the outer cladding layer (silicon dioxide) of the LNOI nano waveguide is one order of magnitude higher than that of an LN waveguide prepared by traditional ion diffusion, so that stronger optical limiting capacity and smaller waveguide bending radius (20 um) can be provided, and the size of a device is greatly reduced; because the intrinsic light absorption loss of the lithium niobate material is only 0.1dB/m, the loss of the thin-film lithium niobate nano waveguide can be reduced to be below 3dB/m by optimizing the LN material dry etching condition and controlling the roughness of the side wall of the waveguide.
The thin-film Lithium Niobate single polarization waveguide provided by the invention has simple process flow, is compatible with the traditional CMOS semiconductor process, and can be combined with devices such as a phase modulator, a coupler, a GSG electrode and the like of an LNOI (Low-indium-oxide-On-Chip) platform to realize an integrated fiber-optic gyroscope system with large bandwidth and rapid modulation. The integrated fiber optic gyroscope system has strong optical mode limiting capability, so that the RF traveling wave electrode can be placed at a position closer to the LN nanometer waveguide, the electrode distance is greatly reduced, the electro-optic modulation efficiency is maximized, and the half-wave voltage of a device is greatly reduced. Therefore, the LNOI platform has LN unique material characteristics and a strong-restriction waveguide with nano-scale, has photonic device integration capability and device processing technology similar to those of an SOI platform, has the potential to realize a next-generation multifunctional photoelectronic integrated chip with low cost and high integration level, and is expected to realize the replacement of the traditional lithium niobate multifunctional integrated optical chip.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (9)
1. A thin film lithium niobate single polarization waveguide is characterized by comprising an upper cladding, a lithium niobate thin film waveguide core layer, a lower cladding and a substrate layer from top to bottom, wherein the refractive indexes of the upper cladding and the lower cladding are respectively smaller than that of the lithium niobate thin film waveguide core layer, the lithium niobate thin film waveguide core layer comprises a ridge waveguide and groove-shaped regions positioned on two sides of the ridge waveguide, and the lithium niobate thin film waveguide core layer is made of a lithium niobate thin film material with a single crystal structure;
wherein, the width and the etching depth of the ridge waveguide are smaller than the cut-off values of a TM0 mode, so that the TM0 mode in the ridge waveguide is cross-coupled with the TE1 mode in the groove region;
the width of the slot region is such that the TE1 mode coupled from the TM0 mode in the ridge waveguide into the two side slot regions is coherently constructive with the TM0 mode leaking into the slot region.
2. The thin film lithium niobate single polarization waveguide of claim 1, wherein the ridge waveguide has a width of 800nm, an etching depth of 140nm, and a width of the groove region is 4.2 μm.
3. The thin film lithium niobate single polarization waveguide of claim 2, wherein the refractive index of the lithium niobate thin film waveguide core layer for o light is 2.15 and the refractive index for e light is 2.22 at a wavelength of 1310 nm; the refractive index of the upper cladding and the lower cladding is 1.46.
4. The thin film lithium niobate single polarization waveguide of claim 2, wherein the substrate layer has a thickness of 500 μm, the lower cladding layer has a thickness of 4.7 μm, the lithium niobate thin film waveguide core layer has a total thickness of 400nm, and the upper cladding layer has a thickness of 4 μm.
5. The thin film lithium niobate single polarization waveguide of claim 1, wherein the thickness of the core layer of the lithium niobate thin film waveguide is from 200nm to 4000 nm.
6. The thin film lithium niobate single polarization waveguide of claim 1, wherein the material of the upper cladding layer is silica, silicon nitride or air.
7. The thin film lithium niobate single polarization waveguide of claim 1, wherein the lower cladding layer has a thickness greater than 1 μm and is made of silicon dioxide, silicon nitride or silicon oxynitride.
8. The method of making a thin film lithium niobate single polarization waveguide of claim 1, comprising the steps of:
s1, preparing a graphical etching hard mask on the thin film lithium niobate through photoetching;
s2, removing partial lithium niobate materials on two sides of the ridge waveguide by dry etching by means of an etching hard mask;
s3, removing the etching hard mask;
and S4, covering a low-refractive index cladding material above the ridge waveguide.
9. The method of claim 8, wherein the hard mask in step S2 is a metal material or an etching resist.
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| CN111505767B (en) * | 2020-04-28 | 2022-02-25 | 上海交通大学 | Preparation method of lithium niobate photonic chip based on silicon oxide mask |
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| CN113848611B (en) * | 2021-09-29 | 2022-05-24 | 上海安湃芯研科技有限公司 | On-chip polarizer based on thin-film lithium niobate and manufacturing method thereof |
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| CN115951449A (en) * | 2023-03-13 | 2023-04-11 | 中科鑫通微电子技术(北京)有限公司 | Low-loss lithium niobate waveguide and preparation method thereof |
| CN116107025B (en) * | 2023-04-14 | 2023-06-13 | 北京世维通科技股份有限公司 | Silicon plasma-assisted thin film lithium niobate Y waveguide hybrid integrated structure |
| CN116430516B (en) * | 2023-04-21 | 2024-03-08 | 上海科技大学 | Optical polarizer |
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