CN110940866B - Sensitivity adjustable resonance miniature electric field sensor - Google Patents
Sensitivity adjustable resonance miniature electric field sensor Download PDFInfo
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- CN110940866B CN110940866B CN201911211349.9A CN201911211349A CN110940866B CN 110940866 B CN110940866 B CN 110940866B CN 201911211349 A CN201911211349 A CN 201911211349A CN 110940866 B CN110940866 B CN 110940866B
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- G01R29/12—Measuring electrostatic fields or voltage-potential
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
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- G01R29/0878—Sensors; antennas; probes; detectors
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Abstract
The utility model provides a resonance miniature electric field sensor with adjustable sensitivity, which comprises a substrate, a supporting beam, an electric field introducing unit, a micro-lever structure, a resonance unit, an exciting electrode, a vibration detecting electrode and a tuning electrode; the electric field introduction unit includes: the device comprises an electric field induction electrode, an electric field input electrode, an electric field bias electrode and a driving structure; the micro-lever structure comprises a lever beam, a force application beam and a stress beam; the resonance unit comprises a plurality of resonance structures which are sequentially arranged to form a symmetrical structure; exciting the electrode to drive the resonance unit; the vibration detection electrode detects a vibration amplitude of the resonance unit generating the vibration. The electric field measurement device has the advantages of being high in sensitivity, wide in frequency band, large in dynamic range and the like by combining the micro lever structure on the basis of ensuring the strength of the output signal of the sensor in a reasonable range.
Description
Technical Field
The present disclosure relates to the field of sensors in the electronics industry, and more particularly, to a resonance miniature electric field sensor with adjustable sensitivity.
Background
The electric field sensor is widely applied to the fields of aerospace, meteorological detection, electric power systems, industrial production, environmental monitoring and the like, and plays an important role in safety guarantee and scientific research. For different application fields, the properties of the electric field to be measured (e.g. the frequency, intensity, direction, duration, etc. of the electric field to be measured) and the working environment of the sensor (e.g. the temperature and physical state of the environment in which the sensor is located) are different, and therefore the types of electric field sensors required for measurement are also different. Currently, a number of electric field measurement principles and sensor processing techniques have been used in the research of electric field sensors. In the last two decades, with the rapid development of Micro-Electro-Mechanical systems (MEMS), Micro electric field sensors have become a research hotspot of electric field sensors due to their advantages of small size, low cost, mass production, low power consumption, and the like.
Some special application fields, such as target detection, low static sensitivity measurement, etc., require the electric field sensor to have extremely high sensitivity, and the resolution needs to reach 1V/m or even higher. However, the micro electric field sensor has the problems of weak signal, low resolution and the like due to small device size.
Disclosure of Invention
Technical problem to be solved
The present disclosure provides a resonant micro electric field sensor with adjustable sensitivity to at least partially solve the technical problems set forth above.
(II) technical scheme
According to one aspect of the present disclosure, there is provided a sensitivity-adjustable resonant micro electric field sensor comprising:
a substrate;
the supporting beams are respectively fixed on the substrate;
an electric field introduction unit comprising: the device comprises an electric field induction electrode, an electric field input electrode, an electric field bias electrode and a driving structure;
the micro-lever structure comprises a lever beam, a force application beam and a stress beam; one end of the force application beam is connected with the electric field input electrode through capacitive coupling; the other end of the force application beam is connected with one end of the lever beam (12); the other end of the lever beam is connected with the supporting beam, and one end of the stressed beam is connected with the lever beam;
the resonance unit is coupled with the other end of the stress beam; the resonance unit comprises a plurality of resonance structures which are sequentially arranged to form a symmetrical structure, and two resonance structures at two ends of the resonance unit are connected with a reference zero potential or a preset reference potential;
an excitation electrode driving the resonance unit;
a vibration detection electrode for detecting a vibration amplitude of the vibration generated by the resonance unit;
and the tuning electrode is fixed on the substrate.
In some embodiments of the present disclosure, the electric field induction electrode is connected with the electric field input electrode through capacitive coupling; the electric field bias electrode is connected with the electric field input electrode through capacitive coupling; the driving structure adjusts the capacitance connected with the electric field bias electrode so as to adjust the sensitivity of the electric field introduction unit;
the electric field introducing unit applies an alternating current voltage signal when measuring a direct current electric field, and applies a direct current voltage signal when measuring an alternating current electric field, so that an alternating current signal which is in direct proportion to the electric field to be measured is introduced into the electric field input electrode, and the output linearity is ensured.
In some embodiments of the present disclosure, in the micro-lever structure,
one end of each of the two force application beams is connected with the electric field input electrode through capacitance coupling;
one ends of the two lever beams are respectively connected with the other ends of the two force application beams;
and one end of the stress beam is connected with the two lever beams, and the other end of the stress beam is connected with the resonance unit.
In some embodiments of the present disclosure, the microlever structures are at least one group.
In some embodiments of the present disclosure, the resonance unit includes three resonance structures, a first resonance structure, a second resonance structure, and a third resonance structure;
the second resonant structure is directly coupled with the first resonant structure and the third resonant structure through capacitive coupling or mechanical beams.
In some embodiments of the present disclosure, the electric field bias electrode is supported by the support beam, the support beam is a straight beam or a folded beam, the comb teeth on the electric field bias electrode are interlaced with the movable comb teeth fixed on the driving structure, and the support beam and the driving structure are fixed on the substrate by the anchor points.
In some embodiments of the present disclosure, one end of each of the two support beams is fixed on the substrate by a fixing anchor point, and the other end of each of the two support beams is vertically connected to the outer ends of the two lever beams, and the two support beams are parallel to each other and are arranged side by side; or
Two ends of one support beam can be fixed on the substrate through fixed anchor points, or one end of the support beam is fixed on the substrate through fixed anchor points, the other end of the support beam is connected with the other support beam which is vertical to the support beam, and two ends of the support beam in the vertical direction are fixed on the substrate through fixed anchor points.
In some embodiments of the present disclosure, a plurality of the resonant structures are connected by capacitive coupling, including capacitive coupling of electrostatic plates or capacitive coupling of electrostatic comb teeth, the movable electrode plates facing each other or the movable comb teeth staggered with each other between adjacent resonant structures form a coupling capacitor, and the movable electrode plates or the movable comb teeth are respectively connected to two adjacent resonant structures; or
The resonant structures are coupled and connected by using mechanical beams, the support beams of the adjacent resonant structures are connected together by the mechanical beams, and the mechanical beams are elastic beam structures of any one of straight beams, folded beams, double folded beams or snake-shaped beams.
In some embodiments of the present disclosure, the excitation electrodes comprise flat plate excitation electrodes or comb excitation electrodes; the excitation electrode is opposite to the movable flat plate electrode fixed on the resonance structure or is mutually staggered with the movable comb tooth electrode fixed on the resonance structure, is fixed on the substrate through a fixed anchor point and is arranged at the outer side or the inner side of the two outermost resonance structures;
the vibration detection electrode comprises a flat plate detection electrode or a comb tooth detection electrode, is opposite to the movable flat plate electrode fixed on the resonance structure, or is mutually staggered with the movable comb tooth electrode fixed on the resonance structure, and is fixed on the substrate through a fixed anchor point, and the vibration detection electrode is arranged on the inner side of the resonance structure;
the tuning electrodes are disposed at one or more of the sides of the two resonance structures at both ends of the resonance unit, both sides of the support beam, and the axial direction of the support beam.
In some embodiments of the present disclosure, the material of the electric field induction electrode is one or more of monocrystalline silicon, polycrystalline silicon, metal or composite material; the electric field input electrode, the electric field bias electrode, the resonance structure, the excitation electrode, the vibration detection electrode, the tuning electrode, the support beam, the lever beam, the force application beam, the driving structure and the substrate are made of one or more of monocrystalline silicon, polycrystalline silicon, metal, polymer or composite materials.
(III) advantageous effects
According to the technical scheme, the resonance micro electric field sensor with adjustable sensitivity disclosed by the invention has at least one or part of the following beneficial effects:
(1) when the sensor is used for measurement, different bias voltages are applied to the electric field bias electrode, the capacitance between the electric field bias electrode and the electric field input electrode is adjusted, and the voltage difference between the resonance structures through capacitive coupling is adjusted, so that the sensitivity of the sensor can be adjusted.
(2) The present disclosure is a symmetric structure composed of two or more resonant structures in weak coupling connection, and has extremely high sensitivity.
(3) The disclosed micro-lever structure composed of lever beam, force application beam and force bearing beam can effectively amplify input signal.
Drawings
FIG. 1 is a schematic diagram of a three-dimensional structure of a resonant micro electric field sensor with adjustable sensitivity according to an embodiment of the present disclosure.
FIG. 2(a) is a schematic diagram of electrostatic plate capacitive coupling.
FIG. 2(b) is a schematic diagram of capacitive coupling of electrostatic comb teeth.
Fig. 2(c) is a schematic view of mechanical beam coupling.
Fig. 3(a) is a schematic diagram of comb excitation electrodes placed inside the resonant structure.
FIG. 3(b) is a schematic diagram of comb excitation electrodes placed outside the resonant structure.
Fig. 3(c) is a schematic diagram of a planar excitation electrode placed inside the resonant structure.
Fig. 3(d) is a schematic diagram of a planar excitation electrode placed outside the resonant structure.
FIG. 4(a) is a schematic diagram of a comb detection electrode.
FIG. 4(b) is a schematic view of a flat panel detection electrode.
Fig. 5(a) is a schematic diagram of a first-stage enlarged structure of the force application beam and the force bearing beam on the same side of the fulcrum.
Fig. 5(b) is a schematic diagram of a first-stage enlarged structure of the force application beam and the force bearing beam on the opposite side of the fulcrum.
FIG. 5(c) is a schematic diagram of a multi-stage structure formed by multiple micro-lever structures.
FIG. 6(a) is a schematic view of a resonant structure with two ends of a support beam fixed to a substrate by means of anchor points.
FIG. 6(b) is a schematic view showing that one end of a support beam of the resonant structure is fixed on a substrate by a fixing anchor and the other end is connected to a support beam perpendicular to each other.
Fig. 7(a) is a schematic structural diagram of an alternative resonant structure, which is composed of a support beam and a mass supported by the support beam.
Fig. 7(b) is a schematic structural diagram of an alternative resonant structure, which is composed of a support beam and a mass supported by the support beam.
Fig. 7(c) is a schematic view of a tuning fork structure in an alternative resonance structure diagram.
Fig. 7(d) is a schematic view of a tuning fork structure in an alternative resonance structure schematic view.
FIG. 7(e) is a schematic view of a ring beam configuration in an alternative resonant configuration.
FIG. 8(a) is a schematic view showing the placement of the electric field inducing electrodes fixed on the substrate.
FIG. 8(b) is a schematic view showing the placement of the electric field inducing electrodes fixed on the substrate.
Fig. 8(c) is a schematic view showing the placement of the electric field inducing electrode on the upper surface of the cap with the through hole.
Fig. 8(d) is a schematic view showing the placement of the electric field inducing electrodes above the envelope.
Fig. 9(a) is a schematic view of an electrode supported by a straight beam.
Fig. 9(b) is a schematic view of the electrode supported by the folded beam.
FIGS. 10(a) -10 (d) are schematic SOI process flow diagrams of the present invention.
[ description of main reference numerals in the drawings ] of the embodiments of the present disclosure
I-an electric field introduction unit;
1-an electric field induction electrode;
2-an electric field input electrode;
3-electric field bias electrode;
4-a first resonant structure;
5-a second resonant structure;
6-a third resonant structure;
7-an excitation electrode;
8-a vibration detection electrode;
9-tuning an electrode;
10-anchor point;
11-a support beam;
II-micro lever structure;
12-a lever beam;
13-a force application beam;
14-a stressed beam;
15-a drive structure;
16-substrate.
Detailed Description
The utility model provides a resonance micro electric field sensor with adjustable sensitivity, which comprises a substrate, a supporting beam, an electric field introduction unit, a micro lever structure, a resonance unit, an excitation electrode, a vibration detection electrode and a tuning electrode; the electric field introduction unit includes: the device comprises an electric field induction electrode, an electric field input electrode, an electric field bias electrode and a driving structure; the micro-lever structure comprises a lever beam, a force application beam and a stress beam; the resonance unit comprises a plurality of resonance structures which are sequentially arranged to form a symmetrical structure; exciting the electrode to drive the resonance unit; the vibration detection electrode detects a vibration amplitude of the resonance unit generating the vibration. The electric field measurement device has the advantages of being high in sensitivity, wide in frequency band, large in dynamic range and the like by combining the micro lever structure on the basis of ensuring the strength of the output signal of the sensor in a reasonable range.
For the purpose of promoting a better understanding of the objects, aspects and advantages of the disclosure, reference should be made to the following detailed description taken in conjunction with the accompanying drawings.
Certain embodiments of the present disclosure will now be described more fully hereinafter with reference to the accompanying drawings, in which some, but not all embodiments of the disclosure are shown. Indeed, various embodiments of the disclosure may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will satisfy applicable legal requirements.
The working principle of the resonance miniature electric field sensor with adjustable sensitivity provided by the disclosure is as follows: the electric field induction electrode generates induction charges under the action of a detected electric field, the electric field input electrode generates static electricity, the electrostatic force generates rigidity disturbance on a certain resonance structure through the amplification of the micro-lever structure, so that the overall vibration mode is changed, the amplitude change condition of the resonance structure is analyzed through the vibration detection electrode, and the purpose of detecting the electric field is achieved.
The technical solution of the present invention is further specifically described below by way of examples with reference to the accompanying drawings. In the specification, the same or similar reference numerals denote the same or similar components. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the general inventive concept of the present invention and should not be construed as limiting the invention.
In a first exemplary embodiment of the present disclosure, a resonant micro electric field sensor with adjustable sensitivity is provided. FIG. 1 is a schematic diagram of a three-dimensional structure of a resonant micro electric field sensor with adjustable sensitivity according to an embodiment of the present disclosure. As shown in fig. 1, the electric field sensing electrode 1 is fixed on the substrate 16, and referring to fig. 8(a), the electric field sensing electrode 1 and the opposite portion of the electric field input electrode 2 form a capacitive coupling connection.
In this embodiment, the electric field input electrode 2 is fixed on the substrate 16 and is in capacitive coupling connection with the portion of the electric field bias electrode 3 facing the substrate, and the electric field input electrode 2 is in capacitive coupling connection with the portion of the micro-lever structure facing the force application beam 13.
In this embodiment, the electric field bias electrode 3 is supported by the support beam 11, the support beam 11 is a straight beam, and as shown in fig. 9(a), the comb teeth of the electric field bias electrode 3 and the movable comb teeth fixed to the driving structure 15 are interlaced with each other, and the support beam 11 and the driving structure 15 are fixed to the substrate 16 by anchor points.
In this embodiment, the micro lever structure II is composed of a lever beam 12, a force application beam 13, and a force application beam 14, the support beam 11 is used as a pivot, one end of the force application beam 13 is connected to the electric field input electrode 2 through capacitive coupling, one end of the force application beam 14 is connected to one of the resonance structures in the resonance unit, and the micro lever structure II is set as a group and is a first-order amplification structure, as shown in fig. 5 (a).
In this embodiment, one end of each of two support beams 11 serving as a fulcrum is fixed to a substrate 16 via a fixing anchor 10, and the other end is vertically connected to the outer ends of the two lever beams 12, respectively, the two support beams 11 are parallel to each other, and the two lever beams 12 are disposed side by side.
In this embodiment, one end of each of the two force application beams 13 is vertically connected to the inner ends of the two lever beams 12, and the other end is simultaneously connected to a vertical pole plate, which is parallel to the perturbation electrode and separated from the perturbation electrode by an air gap, thereby forming a coupling capacitor.
In this embodiment, one end of each of the two force-receiving beams 14 is vertically connected to the outer ends of the two lever beams 12 on the same side of the pivot as the force-applying beam 14, as shown in fig. 5(a), and the other end is connected to the outer end of one of the lever beams 12, and the lever beam 12 and one end of the resonant structure are connected together through a square mass, as shown in fig. 1.
In this embodiment, the adjacent resonant structures form an electrostatic plate capacitor through the facing movable electrode plates, and are coupled to form a symmetrical structure, as shown in fig. 2(a), two resonant structures at two ends of the resonant unit are connected to a reference zero potential or a certain reference potential.
In this embodiment, the resonant structure is driven by comb-tooth excitation electrodes 7, and the comb-tooth excitation electrodes 7 are fixed to the substrate 16 via fixed anchors 10, are disposed inside the resonant structure, and are interleaved with movable comb-tooth electrodes fixed to the resonant structure, as shown in fig. 3 (a).
In this embodiment, comb-tooth vibration detection electrodes 8 are used, which are interleaved with movable comb-tooth electrodes fixed to the resonant structures, fixed to a substrate 16 via fixed anchors 10, and disposed inside two of the resonant structures at both ends in the resonant unit, as shown in fig. 4 (a).
In this embodiment, the tuning electrodes 9 are fixed to the substrate 16 by fixing anchors 10, disposed outside two of the resonance structures at both ends in the resonance unit, on both sides of the support beam 11 of the resonance structure, and in the axial direction of the support beam 11 of the resonance structure.
In this embodiment, the support beam 11 of the middle resonant structure is fixed at both ends to the substrate 16 by the anchor points 10, as shown in fig. 6(a), the outer resonant structure is fixed at one end to the substrate 16 by the anchor points and connected at the other end to a support beam 11 perpendicular to each other, and the support beam 11 in the perpendicular direction is fixed at both ends to the substrate 16 by the anchor points 10, as shown in fig. 6 (b).
In this embodiment, the outer resonant structure is a tuning fork structure, and the middle resonant structure is a support beam and a rectangular mass supported by the support beam, as shown in fig. 7(c) and 7(b), all the support beams 11 are straight beams.
In this embodiment, the SOI process flow is shown in fig. 10(a) -10 (d),
a first step of spin-coating a photoresist on the front side of the SOI wafer, patterning the photoresist through a mask, as shown in fig. 10 (a);
secondly, deep reactive ion etching is carried out, the structure of the device is defined by etching the device layer, and the photoresist is removed, as shown in figure 10 (b);
thirdly, spin-coating and patterning photoresist on the back surface of the substrate, etching the substrate to an oxide layer by deep reactive ions, and removing the photoresist, as shown in fig. 10 (c);
the fourth step is wet etching to remove the oxide layer and release the resonant structure, as shown in fig. 10 (d).
In addition to this embodiment, preferably, the electric field sensing electrode 1 may be fixed on the substrate 16, as shown in fig. 8(a) and 8 (b); or on the upper surface of the cap with the through hole, as shown in fig. 8(c), wherein the electric field sensing electrode 1 is in a boss shape, and the protruding portion and the positive part of the electric field input electrode 2 form a capacitive coupling connection; or above the envelope, as shown in fig. 8(d), wherein the electric field induction electrode 1 is in the shape of a boss, and the protruding portion and the opposite portion of the electric field input electrode 2 form a capacitive coupling connection.
Preferably, the electric field input electrode 2 is fixed on the substrate 16, and is in capacitive coupling connection with the part opposite to the electric field bias electrode 3, and is in capacitive coupling connection with the part opposite to one end of the force application beam 13 of the micro-lever structure.
Preferably, the electric field bias electrode 3 is supported by a support beam 11, and the support beam 11 may be a straight beam as shown in fig. 9(a), or may be a folded beam as shown in fig. 9(b), and the comb teeth on the electric field bias electrode 3 are interlaced with the movable comb teeth fixed to the driving structure 15, and the support beam 11 and the driving structure 15 are fixed to the substrate 16 by anchor points.
Preferably, the micro lever structure is composed of a lever beam 12, a force application beam 13, and a force application beam 14, the support beam 11 is used as a fulcrum, the end of the force application beam 13 is connected with the electric field input electrode 2 through capacitive coupling, the end of the force application beam 14 is connected with a resonance unit, and the micro lever structure can be a one-stage amplification structure composed of a group of micro lever structures, as shown in fig. 5(a), or a multi-stage amplification structure composed of a plurality of groups of micro lever structures, as shown in fig. 5 (c).
Preferably, two support beams 11 as fulcrums are fixed at one end to the substrate 16 by the fixing anchor 10, and at the other end are respectively connected perpendicularly to the outer ends of the two lever beams 12, the two support beams 11 are parallel to each other, and the two lever beams 12 are arranged side by side.
Preferably, one end of each of the two force application beams 13 is vertically connected to the inner end of each of the two lever beams 12, and the other end is simultaneously connected to a vertical pole plate which is parallel to the disturbance electrode and separated from the disturbance electrode by an air gap to form a coupling capacitor.
Preferably, one end of each of the two force-receiving beams 14 is vertically connected to the outer end of each of the two lever beams 12, and is on the same side of the fulcrum as the force-applying beam 13, as shown in fig. 5(a), or is on the opposite side of the fulcrum as the force-applying beam 13, as shown in fig. 5(b), and the other end is connected to the outer end of one lever beam 12, and the lever beam 12 is connected to one end of the resonant structure through a square mass, or is directly connected to the force-applying beam 13 of the next-stage micro-lever structure, as shown in fig. 5 (c).
Preferably, the resonant unit is not limited to be formed by coupling and connecting three resonant structures, and may be formed by coupling and connecting two or more resonant structures, which are sequentially arranged to form a symmetrical structure, the resonant structures are fixed on the substrate 16 through the fixing anchor points 10, and the two outermost resonant structures are connected to a reference zero potential or a certain reference potential.
Preferably, the resonant cell may be formed by a resonant structure, which is fixed to the substrate 16 by means of the anchor 10, the resonant structure being referenced to zero potential.
Preferably, the adjacent resonant structures can be connected by adopting electrostatic plate capacitive coupling, and the movable electrode plates connected between the adjacent resonant structures are opposite to form a coupling capacitor, as shown in fig. 2 (a); electrostatic comb tooth capacitance coupling connection can be adopted, and movable comb teeth connected between adjacent resonance structures are staggered with each other to form coupling capacitance, as shown in fig. 2 (b); the mechanical beams can be coupled and connected, and the support beams of adjacent resonant structures are connected together through the mechanical beams, as shown in fig. 2(c), the mechanical beams can be any one of elastic beam structures such as straight beams, folded beams, double folded beams or serpentine beams.
Preferably, the excitation electrode 7 can be a comb-tooth excitation electrode, which is interlaced with movable comb-tooth electrodes fixed on the resonant structures, and fixed on the substrate 16 by fixed anchors, and is disposed on the inner side or the outer side of the outermost two resonant structures, as shown in fig. 3(a) and 3 (b); a plate excitation electrode 7 may be used, which is opposed to the movable plate electrode fixed to the resonant structures, fixed to the substrate 16 via the fixed anchor points, and disposed inside or outside the outermost two resonant structures, as shown in fig. 3(c) and 3 (d).
Preferably, the vibration detection electrode 8 may be a comb detection electrode, which is interlaced with a movable comb electrode fixed on the resonance structure, fixed on the substrate 16 by a fixed anchor point, and disposed inside the resonance structure, as shown in fig. 4 (a); the vibration detection electrode 8 may be a plate detection electrode facing the movable plate electrode fixed to the resonance structure, fixed to the substrate 16 by a fixed anchor, and placed inside the resonance structure, as shown in fig. 4 (b).
Preferably, the tuning electrodes 9 are fixed to the substrate 16 by fixing anchors 10, may be disposed outside the outermost resonant structure, may be disposed on both sides of the support beams 11 of the plurality of resonant structures, may be disposed in the axial direction of the support beams 11 of the plurality of resonant structures, and may be disposed at these positions at the same time.
Preferably, the end of the resonant structure connected to the micro-lever structure is constrained to move only in the axial direction by a vertically oriented support beam 11, and the two ends of the support beam 11 are fixed to the substrate 16 by means of the fixing anchors 10, as shown in fig. 6 (b).
Preferably, if there is no tuning electrode or micro-lever structure in the axial direction of the support beam 11, both ends of the support beam 11 may be fixed on the substrate 16 by the fixing anchors 10, as shown in fig. 6 (a); if there is a tuning electrode or micro-lever structure in the axial direction of one end of the support beam 11, the end is connected to a support beam 11 perpendicular to each other, constrained to move only in the axial direction, and both ends of the support beam 11 in the perpendicular direction are fixed to the substrate 16 by the fixing anchors 10, and the other end of the support beam 11 is fixed to the substrate 16 by the fixing anchors 10, as shown in fig. 6 (b).
Preferably, the resonant structure may be a structure formed by the support beam 11 and the mass supported by the support beam, as shown in fig. 7(a) and 7(b), a tuning fork structure may be selected, as shown in fig. 7(c) and 7(d), and a ring beam structure may be selected, as shown in fig. 7 (e).
Preferably, the material of the electric field induction electrode 1 is monocrystalline silicon, polycrystalline silicon, metal or composite material; the electric field input electrode 2, the electric field bias electrode 3, the resonance unit, the excitation electrode 7, the vibration detection electrode 8, the tuning electrode 9, the fixed anchor point 10, the support beam 11, the lever beam 12, the force application beam 13, the force bearing beam 14, the driving structure 15 and the substrate 16 are made of monocrystalline silicon, polycrystalline silicon, metal, polymer or composite materials.
Preferably, the present disclosure may be implemented using micro-nano machining technology, Micro Electro Mechanical Systems (MEMS) technology, SO1MEMS, bulk silicon process, surface process, or precision machining technology.
So far, the embodiments of the present disclosure have been described in detail with reference to the accompanying drawings. It is to be noted that, in the attached drawings or in the description, the implementation modes not shown or described are all the modes known by the ordinary skilled person in the field of technology, and are not described in detail. In addition, the above definitions of the various elements and methods are not limited to the specific structures, shapes or modes mentioned in the embodiments, and those skilled in the art may easily modify or replace them.
From the above description, those skilled in the art should clearly recognize that the sensitivity of the present disclosure can be adjusted by the resonant micro-electric field sensor.
In conclusion, the resonance miniature electric field sensor with adjustable sensitivity provided by the disclosure combines the micro lever structure on the basis of ensuring the intensity of the output signal of the sensor in a reasonable range, realizes electric field measurement with high sensitivity, wide frequency band and large dynamic range, and has the advantages of good linearity and the like.
It should also be noted that directional terms, such as "upper", "lower", "front", "rear", "left", "right", etc., mentioned in the embodiments are only directions referring to the drawings, and are not intended to limit the protection scope of the present disclosure. Throughout the drawings, like elements are represented by like or similar reference numerals. Conventional structures or constructions will be omitted when they may obscure the understanding of the present disclosure.
And the shapes and dimensions of the various elements in the drawings are not intended to reflect actual sizes and proportions, but are merely illustrative of the contents of the embodiments of the present disclosure. Furthermore, in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim.
Furthermore, the word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.
The use of ordinal numbers such as "first," "second," "third," etc., in the specification and claims to modify a corresponding element does not by itself connote any ordinal number of the element, nor is the order of one element or component presented herein or method of manufacture, but are used merely to distinguish one element having a certain name from another element having a same name.
Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the disclosure, various features of the disclosure are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various disclosed aspects. However, the disclosed method should not be interpreted as reflecting an intention that: that is, the claimed disclosure requires more features than are expressly recited in each claim. Rather, as the following claims reflect, disclosed aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this disclosure.
The above-mentioned embodiments are intended to illustrate the objects, aspects and advantages of the present disclosure in further detail, and it should be understood that the above-mentioned embodiments are only examples of the present disclosure and are not intended to limit the present disclosure, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.
Claims (9)
1. An adjustable sensitivity resonant micro electric field sensor comprising:
a substrate (16);
support beams (11), the support beams (11) being respectively fixed on the substrates (16);
an electric field introduction unit (I) comprising: the device comprises an electric field induction electrode (1), an electric field input electrode (2), an electric field bias electrode (3) and a driving structure (15);
the micro-lever structure (II) comprises a lever beam (12), a force application beam (13) and a force bearing beam (14); one end of the force application beam (13) is connected with the electric field input electrode (2) through capacitive coupling; the other end of the force application beam (13) is connected with one end of the lever beam (12); the other end of the lever beam (12) is connected with the supporting beam (11), and one end of the stressed beam (14) is connected with the lever beam (12);
the resonance unit is coupled with the other end of the stress beam (14); the resonance unit comprises a plurality of resonance structures which are sequentially arranged to form a symmetrical structure, and two resonance structures at two ends of the resonance unit are connected with a reference zero potential or a preset reference potential;
an excitation electrode (7) that drives the resonance unit;
a vibration detection electrode (8) for detecting the amplitude of vibration generated by the resonance unit;
a tuning electrode (9) fixed on the substrate (16);
the electric field induction electrode (1) is connected with the electric field input electrode (2) through capacitive coupling; the electric field bias electrode (3) is connected with the electric field input electrode (2) through capacitive coupling; the driving structure (15) adjusts the capacitance connected with the electric field bias electrode (3) so as to adjust the sensitivity of the electric field introduction unit;
the electric field introducing unit (I) applies an alternating current voltage signal when measuring a direct current electric field, and applies a direct current voltage signal when measuring an alternating current electric field, so that an alternating current signal which is in direct proportion to the electric field to be measured is introduced into the electric field input electrode (2), and the output linearity is ensured.
2. A resonant micro electric field sensor according to claim 1, wherein in the micro lever structure (II),
one ends of the two force application beams (13) are respectively connected with the electric field input electrode (2) through capacitive coupling;
one end of each of the two lever beams (12) is connected with the other end of each of the two force application beams (13);
and one end of the stress beam (14) is simultaneously connected with the two lever beams (12), and the other end of the stress beam (14) is connected with the resonance unit.
3. The resonant micro electric field sensor of claim 1, wherein the micro lever structures (II) are at least one group.
4. A resonant micro electric field sensor according to claim 1, wherein the resonant unit comprises three resonant structures, a first resonant structure (4), a second resonant structure (5) and a third resonant structure (6);
the second resonant structure (5) is directly coupled with the first resonant structure (4) and the third resonant structure (6) through capacitive coupling or mechanical beams.
5. The resonant micro-electric field sensor of claim 1,
the electric field bias electrode (3) is supported by the support beam (11), the support beam (11) is a straight beam or a folded beam, comb teeth on the electric field bias electrode (3) and movable comb teeth fixed on the driving structure (15) are mutually staggered, and the support beam (11) and the driving structure (15) are fixed on the substrate (16) through anchor points.
6. The resonant micro electric field sensor according to claim 1, wherein two support beams (11) are fixed at one end to the substrate (16) by means of a fixing anchor (10), the other ends of the support beams (11) are respectively connected perpendicularly to the outer ends of the two lever beams (12), the two support beams (11) are parallel to each other and are placed side by side; or
Two ends of one supporting beam (11) can be fixed on the substrate (16) through fixing anchor points (10), or one end of the supporting beam (11) is fixed on the substrate (16) through the fixing anchor points (10), the other end of the supporting beam (11) is connected with the other supporting beam (11) which is vertical to each other, and two ends of the supporting beam (11) in the vertical direction are fixed on the substrate (16) through the fixing anchor points (10).
7. The resonant micro-electric field sensor of claim 1,
the plurality of resonance structures are connected in a capacitive coupling mode, the capacitive coupling mode comprises electrostatic flat plate capacitive coupling or electrostatic comb tooth capacitive coupling, the movable polar plates which are opposite to each other between the adjacent resonance structures or the movable comb teeth which are staggered form coupling capacitors, and the movable polar plates or the movable comb teeth are respectively connected to the two adjacent resonance structures; or
The resonance structures are coupled and connected by mechanical beams, the supporting beams (11) of the adjacent resonance structures are connected together by the mechanical beams, and the mechanical beams are elastic beam structures of any one of straight beams, folded beams, double folded beams or snake-shaped beams.
8. The resonant micro-electric field sensor of claim 1,
the excitation electrode (7) comprises a flat plate excitation electrode or a comb tooth excitation electrode; the excitation electrode (7) is opposite to the movable flat plate electrode fixed on the resonance structure or is mutually staggered with the movable comb tooth electrode fixed on the resonance structure, is fixed on the substrate (16) through the fixed anchor point (10), and is arranged at the outer side or the inner side of the two outermost resonance structures;
the vibration detection electrode (8) comprises a flat plate detection electrode or a comb tooth detection electrode, is opposite to the movable flat plate electrode fixed on the resonance structure, or is mutually staggered with the movable comb tooth electrode fixed on the resonance structure, and is fixed on the substrate (16) through a fixed anchor point (10), and the vibration detection electrode (8) is arranged on the inner side of the resonance structure;
the tuning electrodes (9) are disposed at one or more of the sides of the two resonant structures at both ends of the resonant unit, both sides of the support beam, and the axial direction of the support beam.
9. The resonant micro electric field sensor according to claim 1, wherein the material of the electric field sensing electrode (1) is one or more of single crystal silicon, polycrystalline silicon, metal or composite material; the electric field input electrode (2), the electric field bias electrode (3), the resonance structure, the excitation electrode (7), the vibration detection electrode (8), the tuning electrode (9), the support beam (11), the lever beam (12), the force application beam (13), the force bearing beam (14), the driving structure (15), and the substrate (16) are made of one or more of monocrystalline silicon, polycrystalline silicon, metal, polymer, or composite material.
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| CN113625064B (en) * | 2020-05-09 | 2023-06-27 | 中国科学院空天信息创新研究院 | Torque type miniature electric field sensor based on modal localization |
| CN112798060B (en) * | 2021-04-13 | 2021-06-25 | 南京深思微电子有限公司 | Resonant flow sensor |
| CN113671276B (en) * | 2021-09-10 | 2023-07-07 | 中国科学院空天信息创新研究院 | Space electric field measuring device and system |
| CN113655300B (en) * | 2021-09-10 | 2024-05-17 | 中国科学院空天信息创新研究院 | Resonant electric field sensor and preparation method thereof |
| CN114814334B (en) * | 2022-04-14 | 2023-05-16 | 南京高华科技股份有限公司 | Current sensor |
| CN116470880B (en) * | 2023-06-20 | 2023-09-19 | 麦斯塔微电子(深圳)有限公司 | Anti-symmetrically driven mems resonator |
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