CN110927548A - System and method for detecting surge current bearing capacity of power semiconductor device - Google Patents

System and method for detecting surge current bearing capacity of power semiconductor device Download PDF

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Publication number
CN110927548A
CN110927548A CN201911137416.7A CN201911137416A CN110927548A CN 110927548 A CN110927548 A CN 110927548A CN 201911137416 A CN201911137416 A CN 201911137416A CN 110927548 A CN110927548 A CN 110927548A
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semiconductor device
power semiconductor
auxiliary igbt
tested
power
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陈中圆
杨晓亮
李翠
陈艳芳
张西子
孙帅
李金元
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Electric Power Research Institute of State Grid Shandong Electric Power Co Ltd
Global Energy Interconnection Research Institute
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Electric Power Research Institute of State Grid Shandong Electric Power Co Ltd
Global Energy Interconnection Research Institute
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor
    • G01R31/2603—Apparatus or methods therefor for curve tracing of semiconductor characteristics, e.g. on oscilloscope

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Abstract

The invention relates to a surge current bearing capacity detection system of a power semiconductor device, which is characterized by comprising the following components: the power supply device, the auxiliary IGBT device, the driving unit corresponding to the auxiliary IGBT device, the power semiconductor device to be tested and the driving unit corresponding to the power semiconductor device to be tested. The technical scheme provided by the invention can accurately and quickly detect the surge current bearing capacity of the power semiconductor device to be detected, and meets the surge current test requirements of different waveforms of the power semiconductor device for the power system.

Description

System and method for detecting surge current bearing capacity of power semiconductor device
Technical Field
The invention belongs to the field of power semiconductors, and particularly relates to a system and a method for detecting surge current bearing capacity of a power semiconductor device.
Background
With the maturity of high-power semiconductor device technology and power electronic device technology, power electronic devices based on thyristors and IGBTs are more and more widely applied in power systems, such as high-voltage direct-current converter valves, flexible direct-current converter valves, high-voltage direct-current circuit breakers, static var generators, unified power flow controllers, and the like.
For the power system, the reliability of the device becomes the primary evaluation index, as the core component of the device, the power semiconductor device is the decisive factor of the reliability of the device, and it is counted that more than 50% of failures of the current power electronic device are caused by the power semiconductor device.
Power system power electronics need to withstand surge currents with higher peaks and longer durations than in other applications. Different applications require different current waveform requirements, so that the surge current detection system and the surge current detection method for the power semiconductor device are needed.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a system and a method for detecting the surge current bearing capacity of a power semiconductor device, which meet the surge current test requirements of different waveforms of the power semiconductor device for an electric power system.
The purpose of the invention is realized by adopting the following technical scheme:
in a power semiconductor device surge current capability detection system, the improvement comprising: the power supply device, the auxiliary IGBT device and the driving unit corresponding to the auxiliary IGBT device;
the positive electrode of the power supply device is respectively connected with the collector electrode of the auxiliary IGBT device and the collector electrode of the power semiconductor device to be tested;
the cathode of the power supply device is respectively connected with the emitting set of the auxiliary IGBT device and the emitting electrode of the power semiconductor device to be tested;
a driving unit corresponding to the auxiliary IGBT device is connected between the cathode of the power supply device and the grid of the auxiliary IGBT device;
a driving unit corresponding to the power semiconductor device to be measured is connected between the cathode of the power supply device and the grid of the power semiconductor device to be measured;
the target conduction current signal of the power semiconductor device to be tested is transmitted to the driving unit corresponding to the auxiliary IGBT device; the target conducting current signal of the power semiconductor device to be tested is preset.
Preferably, the auxiliary IGBT device is composed of an IGBT and a diode in anti-parallel connection.
Preferably, the current/voltage level of the power semiconductor device under test does not exceed the current/voltage level of the auxiliary IGBT device.
Preferably, the maximum output current of the power supply device exceeds 30 kA.
Preferably, the power semiconductor device under test includes: thyristors, IGBTs, IEBT or power electronics bricks.
Preferably, the driving unit corresponding to the auxiliary IGBT device includes:
the acquisition module is used for acquiring a target conduction current signal of the power semiconductor device to be measured and acquiring an output current signal of the power supply device;
the signal processing module is used for determining a target grid control voltage signal of the auxiliary IGBT device according to a target conduction current signal of the power semiconductor device to be tested and an output current signal of the power supply device;
and the power amplification module is used for carrying out power amplification on the target grid control voltage signal of the auxiliary IGBT device and outputting the amplified target grid control voltage signal of the auxiliary IGBT device to the grid of the auxiliary IGBT device.
Further, the signal processing module is specifically configured to:
determining a target gate control voltage signal V of an auxiliary IGBT device according to the following formulage：
Figure BDA0002279943130000021
In the formula I1For a target on-current signal of the auxiliary IGBT device, g is the transconductance of the auxiliary IGBT device, I1And the difference signal is equal to the output current signal of the power supply device and the target conduction current signal of the power semiconductor device to be tested.
Further, the driving unit corresponding to the power semiconductor device to be measured is specifically configured to: and controlling the on and off of the power semiconductor device to be measured.
In a power semiconductor device inrush current capability detection method based on a power semiconductor device inrush current capability detection system, the improvement comprising:
after the power supply device is started, inputting a preset target conduction current signal of the power semiconductor device to be tested to a driving unit corresponding to the auxiliary IGBT device;
and if the leakage current of the power semiconductor device to be tested does not exceed the standard, the bearing capacity of the power semiconductor device to be tested reaches the standard.
Compared with the closest prior art, the invention has the advantages that:
the technical scheme provided by the invention comprises the following steps: the power supply device, the auxiliary IGBT device and the driving unit corresponding to the auxiliary IGBT device; the positive electrode of the power supply device is respectively connected with the collector electrode of the auxiliary IGBT device and the collector electrode of the power semiconductor device to be tested; the cathode of the power supply device is respectively connected with the emitting set of the auxiliary IGBT device and the emitting electrode of the power semiconductor device to be tested; a driving unit corresponding to the auxiliary IGBT device is connected between the cathode of the power supply device and the grid of the auxiliary IGBT device; and a driving unit corresponding to the power semiconductor device to be measured is connected between the cathode of the power supply device and the grid of the power semiconductor device to be measured. In the above scheme, the target conduction current signal of the power semiconductor device to be tested can be set, and the target conduction current signal of the power semiconductor device to be tested is input to the driving unit corresponding to the auxiliary IGBT device, so that the auxiliary IGBT device shunts the output current signal of the power supply device, and the current borne by the power semiconductor device to be tested is ensured to be the corresponding target conduction current signal, thereby accurately and quickly detecting the surge current bearing capacity of the power semiconductor device to be tested, and meeting the surge current test requirements of different waveforms of the power semiconductor device for the power system.
Drawings
Fig. 1 is a schematic structural diagram of a system for detecting surge current carrying capability of a power semiconductor device in an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a driving unit corresponding to the auxiliary IGBT device in the embodiment of the present invention;
fig. 3 is a flowchart of a method for detecting surge current carrying capability of a power semiconductor device according to an embodiment of the present invention;
FIG. 4 shows an embodiment of the present invention in which the output current signal of the power supply device is IaThe target on-current signal of the auxiliary IGBT device is Ia1A corresponding current waveform diagram;
FIG. 5 shows that the target on-current signal of the power semiconductor device under test is Ia2A corresponding current waveform diagram;
FIG. 6 shows an embodiment of the present invention in which the output current signal of the power supply device is IbThe target on-current signal of the auxiliary IGBT device is Ib1A corresponding current waveform diagram;
FIG. 7 shows that the target on-current signal of the power semiconductor device under test is Ib2Corresponding current waveform diagrams.
Detailed Description
The following describes embodiments of the present invention in further detail with reference to the accompanying drawings.
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The embodiment provides a power semiconductor device surge current bearing capacity detection system, as shown in fig. 1, the system includes: the power supply device, the auxiliary IGBT device and the driving unit corresponding to the auxiliary IGBT device;
the positive electrode of the power supply device is respectively connected with the collector electrode of the auxiliary IGBT device and the collector electrode of the power semiconductor device to be tested;
the cathode of the power supply device is respectively connected with the emitting set of the auxiliary IGBT device and the emitting electrode of the power semiconductor device to be tested;
a driving unit corresponding to the auxiliary IGBT device is connected between the cathode of the power supply device and the grid of the auxiliary IGBT device;
a driving unit corresponding to the power semiconductor device to be measured is connected between the cathode of the power supply device and the grid of the power semiconductor device to be measured;
the target conduction current signal of the power semiconductor device to be tested is transmitted to the driving unit corresponding to the auxiliary IGBT device; the target conducting current signal of the power semiconductor device to be tested is preset.
Furthermore, the auxiliary IGBT device is formed by connecting an IGBT and a diode in anti-parallel.
Further, the current/voltage level of the power semiconductor device to be measured does not exceed the current/voltage level of the auxiliary IGBT device.
Further, the maximum output current of the power supply device exceeds 30 kA.
Further, the power semiconductor device under test includes: thyristors, IGBTs, IEBT or power electronics bricks.
Further, as shown in fig. 2, the driving unit corresponding to the auxiliary IGBT device includes:
the acquisition module is used for acquiring a target conduction current signal I of the power semiconductor device to be measured2Collecting an output current signal I of a power supply device;
the signal processing module is used for determining a target grid control voltage signal of the auxiliary IGBT device according to a target conduction current signal of the power semiconductor device to be tested and an output current signal of the power supply device;
and the power amplification module is used for carrying out power amplification on the target grid control voltage signal of the auxiliary IGBT device and outputting the amplified target grid control voltage signal of the auxiliary IGBT device to the grid of the auxiliary IGBT device.
Specifically, the signal processing module is specifically configured to:
determining a target gate control voltage signal V of an auxiliary IGBT device according to the following formulage：
Figure BDA0002279943130000041
In the formula I1For a target on-current signal of the auxiliary IGBT device, g is the transconductance of the auxiliary IGBT device, I1And the difference signal is equal to the output current signal of the power supply device and the target conduction current signal of the power semiconductor device to be tested.
Specifically, the driving unit corresponding to the power semiconductor device to be measured is specifically configured to: and controlling the on and off of the power semiconductor device to be measured.
The embodiment also provides a power semiconductor device inrush current endurance detection method based on a power semiconductor device inrush current endurance detection system, as shown in fig. 3, the method includes:
s101, starting a power supply device;
s102, setting a target conduction current signal of the power semiconductor device to be measured, and inputting the target conduction current signal of the power semiconductor device to be measured to a driving unit corresponding to the auxiliary IGBT device;
the auxiliary IGBT device corresponds toThe acquisition module in the drive unit acquires a target conduction current signal I of the power semiconductor device to be tested2Collecting an output current signal I of the power supply device;
a signal processing module in a driving unit corresponding to the auxiliary IGBT device determines a target grid control voltage signal of the auxiliary IGBT device according to a target conduction current signal of the power semiconductor device to be tested and an output current signal of the power supply device;
the power amplification module in the driving unit corresponding to the auxiliary IGBT device amplifies the power of the target grid control voltage signal of the auxiliary IGBT device and outputs the amplified target grid control voltage signal of the auxiliary IGBT device to the grid of the auxiliary IGBT device;
the amplified target grid control voltage signal of the auxiliary IGBT device controls the grid of the auxiliary IGBT device to enable the target conduction current signal of the auxiliary IGBT device to be I1；
I1By shunting I, the on-current signal of the power semiconductor device to be tested is controlled to be I2；
As shown in fig. 4, if the output current signal of the power supply device is IaThe target conduction current signal of the auxiliary IGBT device is Ia1Then, as shown in FIG. 5, the target on-current signal of the power semiconductor device under test is Ia2Wherein, Ia＝Ia1+Ia2；
As shown in fig. 6, if the output current signal of the power supply device is IbThe target conduction current signal of the auxiliary IGBT device is Ib1Then, as shown in FIG. 7, the target on-current signal of the power semiconductor device under test is Ib2Wherein, Ib＝Ib1+Ib2；
S103, judging whether the leakage current of the power semiconductor device to be tested exceeds the standard or not when the conduction time of the power semiconductor device to be tested reaches the preset working time, if not, judging that the bearing capacity of the power semiconductor device to be tested reaches the standard, otherwise, judging that the bearing capacity of the power semiconductor device to be tested does not reach the standard.
As will be appreciated by one skilled in the art, embodiments of the present application may be provided as a method, system, or computer program product. Accordingly, the present application may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present application may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein.
The present application is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the application. It will be understood that each flow and/or block of the flow diagrams and/or block diagrams, and combinations of flows and/or blocks in the flow diagrams and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting the same, and although the present invention is described in detail with reference to the above embodiments, those of ordinary skill in the art should understand that: modifications and equivalents may be made to the embodiments of the invention without departing from the spirit and scope of the invention, which is to be covered by the claims.

Claims (9)

1. A power semiconductor device surge current withstand capability detection system, the system comprising: the power supply device, the auxiliary IGBT device and the driving unit corresponding to the auxiliary IGBT device;
the positive electrode of the power supply device is respectively connected with the collector electrode of the auxiliary IGBT device and the collector electrode of the power semiconductor device to be tested;
the cathode of the power supply device is respectively connected with the emitting set of the auxiliary IGBT device and the emitting electrode of the power semiconductor device to be tested;
a driving unit corresponding to the auxiliary IGBT device is connected between the cathode of the power supply device and the grid of the auxiliary IGBT device;
a driving unit corresponding to the power semiconductor device to be measured is connected between the cathode of the power supply device and the grid of the power semiconductor device to be measured;
the target conduction current signal of the power semiconductor device to be tested is transmitted to the driving unit corresponding to the auxiliary IGBT device; the target conducting current signal of the power semiconductor device to be tested is preset.
2. The system of claim 1, wherein the auxiliary IGBT device consists of an IGBT and a diode in anti-parallel.
3. The system of claim 1, wherein the current/voltage level of the power semiconductor device under test does not exceed the current/voltage level of the auxiliary IGBT device.
4. The system of claim 1, wherein the maximum output current of the power supply device exceeds 30 kA.
5. The system of claim 1, wherein the power semiconductor device under test comprises: thyristors, IGBTs, IEBT or power electronics bricks.
6. The system of claim 1, wherein the auxiliary IGBT device corresponds to a drive unit comprising:
the acquisition module is used for acquiring a target conduction current signal of the power semiconductor device to be measured and acquiring an output current signal of the power supply device;
the signal processing module is used for determining a target grid control voltage signal of the auxiliary IGBT device according to a target conduction current signal of the power semiconductor device to be tested and an output current signal of the power supply device;
and the power amplification module is used for carrying out power amplification on the target grid control voltage signal of the auxiliary IGBT device and outputting the amplified target grid control voltage signal of the auxiliary IGBT device to the grid of the auxiliary IGBT device.
7. The system of claim 6, wherein the signal processing module is specifically configured to:
determining a target gate control voltage signal V of an auxiliary IGBT device according to the following formulage：
Figure FDA0002279943120000011
In the formula I1For a target on-current signal of the auxiliary IGBT device, g is the transconductance of the auxiliary IGBT device, I1And the difference signal is equal to the output current signal of the power supply device and the target conduction current signal of the power semiconductor device to be tested.
8. The system of claim 1, wherein the driving unit corresponding to the power semiconductor device under test is specifically configured to: and controlling the on and off of the power semiconductor device to be measured.
9. A power semiconductor device inrush current withstand capability detection method based on the power semiconductor device inrush current withstand capability detection system according to any one of claims 1 to 8, the method comprising:
after the power supply device is started, inputting a preset target conduction current signal of the power semiconductor device to be tested to a driving unit corresponding to the auxiliary IGBT device;
and if the leakage current of the power semiconductor device to be tested does not exceed the standard, the bearing capacity of the power semiconductor device to be tested reaches the standard.
CN201911137416.7A 2019-11-19 2019-11-19 System and method for detecting surge current bearing capacity of power semiconductor device Pending CN110927548A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111707919A (en) * 2020-06-29 2020-09-25 全球能源互联网研究院有限公司 IGBT device test circuit and test method
CN113866582A (en) * 2021-08-27 2021-12-31 北京工业大学 Method for detecting instantaneous burnout resistance of power device switch
CN113866582B (en) * 2021-08-27 2024-06-04 北京工业大学 Method for detecting instant burnout resistance of power device switch

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111707919A (en) * 2020-06-29 2020-09-25 全球能源互联网研究院有限公司 IGBT device test circuit and test method
CN113866582A (en) * 2021-08-27 2021-12-31 北京工业大学 Method for detecting instantaneous burnout resistance of power device switch
CN113866582B (en) * 2021-08-27 2024-06-04 北京工业大学 Method for detecting instant burnout resistance of power device switch

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