CN110900438A - Wafer polishing device and method - Google Patents

Wafer polishing device and method Download PDF

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Publication number
CN110900438A
CN110900438A CN201911311374.4A CN201911311374A CN110900438A CN 110900438 A CN110900438 A CN 110900438A CN 201911311374 A CN201911311374 A CN 201911311374A CN 110900438 A CN110900438 A CN 110900438A
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CN
China
Prior art keywords
polishing
thickness
wafer
adjustable
groove
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Pending
Application number
CN201911311374.4A
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Chinese (zh)
Inventor
张黎欢
沈思情
孙强
张俊宝
陈猛
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Chongqing Super Silicon Semiconductor Co Ltd
SHANGHAI ADVANCED SILICON TECHNOLOGY Co Ltd
Original Assignee
Chongqing Super Silicon Semiconductor Co Ltd
SHANGHAI ADVANCED SILICON TECHNOLOGY Co Ltd
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Application filed by Chongqing Super Silicon Semiconductor Co Ltd, SHANGHAI ADVANCED SILICON TECHNOLOGY Co Ltd filed Critical Chongqing Super Silicon Semiconductor Co Ltd
Priority to CN201911311374.4A priority Critical patent/CN110900438A/en
Publication of CN110900438A publication Critical patent/CN110900438A/en
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
    • B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The invention discloses a wafer polishing device and a method, wherein the wafer polishing device comprises a polishing carrier and a polishing pad with adjustable thickness, the polishing carrier comprises a polishing carrier groove, the polishing pad with adjustable thickness is arranged in the polishing carrier groove in the wafer polishing process, and a wafer is arranged on the polishing pad with adjustable thickness; the groove depth h1 of the polishing carrier groove, the thickness h2 of the adjustable thickness polishing pad, and the thickness h3 of the wafer satisfy h2+ h3> h 1. The service life of the wafer polishing device is prolonged, the flatness of the wafer can be improved, and the polishing process is simple and easy to implement.

Description

Wafer polishing device and method
Technical Field
The embodiment of the invention relates to the technical field of semiconductor manufacturing, in particular to a wafer polishing device and method.
Background
The semiconductor industry is the core of modern electronics industry, and at present, more than 90% of semiconductor devices and circuits, especially Ultra Large Scale Integrated circuits (ULSI), are fabricated on high purity, high quality single crystal polished wafers and epitaxial wafers. Therefore, it is important to obtain a wafer with very small surface micro-defects and high flatness in the wafer manufacturing process.
The polishing process is a process required to process a wafer to a prescribed thickness and improve the flatness of the wafer, and is performed using a polishing apparatus that polishes the wafer. In the existing polishing processing technology, wafers with different thicknesses need to be selected and used by polishing carriers with different groove depths, the polishing carriers have a certain period and a certain service life, the flatness of the wafers is reduced at the later stage of use, the service life of the polishing carriers is shortened, and the cost in the polishing processing process is increased.
Disclosure of Invention
The embodiment of the invention provides a wafer polishing device and a method, which are used for prolonging the service life of the wafer polishing device and improving the flatness of a wafer, and the polishing process is simple and easy to implement.
In a first aspect, an embodiment of the present invention provides a wafer polishing apparatus, which includes a polishing carrier and an adjustable-thickness polishing pad, where the polishing carrier includes a polishing carrier groove, the adjustable-thickness polishing pad is disposed in the polishing carrier groove, and a wafer is disposed on the adjustable-thickness polishing pad during a wafer polishing process.
The groove depth h1 of the polishing carrier groove, the thickness h2 of the adjustable thickness polishing pad, and the thickness h3 of the wafer satisfy h2+ h3> h 1.
Optionally, the thickness of the adjustable-thickness polishing pad is less than the depth of the polishing carrier groove.
Optionally, during wafer polishing, the wafer includes a first wafer section located within the polishing carrier slot and a second wafer section extending beyond the polishing carrier slot.
The thickness h32 of the second wafer subsection is equal to or greater than 70 μm and equal to or less than h32 and equal to or less than 130 μm.
Optionally, the thickness h2 of the polishing pad with adjustable thickness satisfies h2 ═ h32+ h1-h3, 70 μm + h1-h3 ≤ h2 ≤ 130 μm + h1-h 3.
Optionally, the groove depth of the polishing carrier groove is fixed, and the groove depth h1 of the polishing carrier groove satisfies 1200 μm or more and h1 or more and 1400 μm or less.
Optionally, the wafer polishing apparatus further includes a polishing cloth, and during the wafer polishing process, the polishing cloth is disposed in the polishing carrier groove and located between the thickness-adjustable polishing pad and the wafer.
The groove depth h1 of the polishing carrier groove, the thickness h2 of the thickness-adjustable polishing pad, the thickness h3 of the wafer and the thickness h4 of the polishing flannelette meet, wherein h2+ h3+ h4> h 1.
Optionally, the thickness of the polishing flannelette is fixed, and the thickness h4 of the polishing flannelette meets the requirement that the thickness h4 is more than or equal to 600 μm and less than or equal to 620 μm.
Optionally, the polishing carrier is rotatable.
In a second aspect, an embodiment of the present invention further provides a wafer polishing method, in which a wafer is polished by using a wafer polishing apparatus, the wafer polishing apparatus includes a polishing carrier and a polishing pad with an adjustable thickness, and the polishing carrier includes a polishing carrier groove.
The wafer polishing method comprises the following steps:
determining a wafer to be polished and obtaining the thickness of the wafer;
determining the thickness of the polishing pad with the adjustable thickness according to the thickness of the wafer and the groove depth of the polishing carrier groove; wherein a groove depth h1 of the polishing carrier groove, a thickness h2 of the adjustable thickness polishing pad, and a thickness h3 of the wafer satisfy h2+ h3> h 1;
and arranging the polishing pad with the adjustable thickness in the polishing carrier groove, arranging the wafer on the polishing pad with the adjustable thickness, and polishing the wafer.
Optionally, during wafer polishing, the wafer comprises a first wafer subsection located inside the polishing carrier groove and a second wafer subsection exceeding the polishing carrier groove; the thickness h32 of the second wafer subsection is equal to or more than 70 mu m and equal to or less than h32 and equal to or less than 130 mu m;
determining the thickness of the adjustable-thickness polishing pad according to the thickness of the wafer and the groove depth of the polishing carrier groove, comprising:
determining a thickness of the adjustable-thickness polishing pad based on the thickness of the wafer, the depth of the polishing carrier groove, and the thickness of the second wafer section; wherein the thickness h2 of the adjustable-thickness polishing pad, the groove depth h1 of the polishing carrier groove, the thickness h3 of the wafer and the thickness h32 of the second wafer section satisfy h 2-h 32+ h1-h3, and 70 μm + h1-h3-h 2-130 μm + h1-h 3.
The wafer polishing device comprises a polishing carrier and a thickness-adjustable polishing pad, wherein the polishing carrier is provided with a polishing carrier groove, the thickness-adjustable pad is arranged in the polishing carrier groove, and a wafer is arranged on the thickness-adjustable polishing pad. In the wafer polishing process, the thickness-adjustable polishing pad is switched, so that the wafer is polished when the groove depth h1 of the polishing carrier groove, the thickness h2 of the thickness-adjustable polishing pad and the thickness h3 of the wafer meet the conditions of h2+ h3> h 1. The problems that in the prior art, the service life of the polishing carrier is shortened, the flatness of the wafer is reduced in the later period and the like caused by the fact that the polishing carrier with different groove depths is replaced to polish the wafer are solved, the service life of the wafer polishing device is prolonged, the flatness of the wafer is improved, and the polishing process is simple and easy to implement and the like are achieved.
Drawings
FIG. 1 is a schematic view of a wafer polishing apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of another wafer polishing apparatus according to an embodiment of the present invention;
FIG. 3 is a schematic flow chart of a wafer polishing method according to a second embodiment of the present invention;
fig. 4 is a schematic flow chart of another wafer polishing method according to the second embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
Example one
Fig. 1 is a schematic structural diagram of a wafer polishing apparatus according to an embodiment of the present invention, as shown in fig. 1, the wafer polishing apparatus includes a polishing carrier 10 and an adjustable-thickness polishing pad 20, the polishing carrier 10 includes a polishing carrier groove 11, the adjustable-thickness polishing pad 20 is disposed in the polishing carrier groove 11, and a wafer 30 is disposed on the adjustable-thickness polishing pad 20 during a polishing process of the wafer 30.
The groove depth h1 of the polishing carrier groove 11, the thickness h2 of the adjustable thickness polishing pad and the thickness h3 of the wafer satisfy h2+ h3> h 1.
It should be noted that the thickness adjustable polishing pad 20 is selected according to the thickness h3 of the wafer 30. When the sum of the thickness h2 of the adjustable-thickness polishing pad and the thickness h3 of the wafer is larger than the groove depth h1 of the polishing carrier groove 11, namely h2+ h3> h1, the groove depth h1 of the polishing carrier groove 11 is fixed, and the thickness of the adjustable-thickness polishing pad 20 can be properly adjusted, so that the wafers 30 with different thicknesses can be polished by switching the adjustable-thickness polishing pad 20 in the polishing process, the polishing method is simple, the polishing carrier 10 does not need to be replaced timely, the service life of the polishing carrier is prolonged, and the flatness of the wafers is also improved. Illustratively, the thickness of the tunable polishing pad is selected to be at least 770 μm when the wafer has a thickness of 550 μm and the polishing carrier grooves 11 have a groove depth of 1320 μm.
Optionally, the thickness h2 of the adjustable thickness polishing pad 20 is less than the depth h1 of the polishing carrier grooves 11.
It should be noted that when the thickness h2 of the adjustable-thickness polishing pad 20 is greater than the depth h1 of the polishing carrier groove 11, the wafer 30 cannot be fixed because the wafer in the polishing carrier groove 11 is completely exposed out of the polishing carrier groove 11, and the polishing carrier 10 can only be polished, which does not meet the requirement for polishing the wafer.
Optionally, during the wafer polishing process, the wafer 30 includes a first wafer subsection 31 located within the polishing carrier slot 11 and a second wafer subsection 32 extending beyond the polishing carrier slot 11, and the thickness h32 of the second wafer subsection 32 satisfies a range of 70 μm or more and a range of h32 or more and a range of 130 μm or less.
When the thickness h32 of the second wafer subsection 32 is equal to or greater than 70 μm and equal to or greater than h32 and equal to or greater than 130 μm, the wafer 30 is fully polished in the wafer polishing process, the thickness of the adjustable-thickness polishing pad 20 can be adjusted within a certain range according to the thickness h32 of the second wafer subsection 32, pads with different thicknesses can be selected according to the polishing requirements of customers on wafers with different thicknesses in the production process, and the flexibility of manual operation is improved.
Optionally, the thickness h2 of the adjustable-thickness polishing pad 20 satisfies h2 ═ h32+ h1-h3, 70 μm + h1-h3 ≤ h2 ≤ 130 μm + h1-h 3.
The thickness h2 of the polishing pad 20 with adjustable thickness can be flexibly switched when the above conditions are met, so that the polishing carriers 10 with different groove depths are not selected in the conventional polishing process, and the service life of the polishing carriers 10 is prolonged.
Optionally, the groove depth of the polishing carrier groove 11 is fixed, and the groove depth h1 of the polishing carrier groove satisfies the condition that h1 is more than or equal to 1200 μm and less than or equal to 1400 μm.
Illustratively, the groove depth of the polishing carrier grooves 11 is fixed, for wafers with different thicknesses, the same or the same batch of polishing carrier grooves with the fixed groove depth can be adopted, normal polishing of the wafers is guaranteed by using the polishing pads 20 with different thicknesses and with adjustable thicknesses, replacement of the polishing carrier grooves with different groove depths is avoided, the polishing process is simplified, and the efficiency of the whole polishing process is improved. Further, the groove depth of the polishing carrier groove is reasonably set, on one hand, the groove depth is matched with a wafer to be polished, on the other hand, the groove depth is matched with the wafer polishing device, and normal polishing of the wafer can be guaranteed.
Among them, it is preferable that the groove depth h1 of the polishing carrier groove 11 is fixed at 1320 μm. In the actual wafer polishing process, the groove depth of the polishing carrier groove 11 is fixed to 1320 μm, so that the polishing carrier groove with different groove depths is prevented from being replaced, the polishing process is simplified, and the efficiency of the whole polishing process is improved.
Optionally, fig. 2 is a schematic structural diagram of another wafer polishing apparatus according to an embodiment of the present invention, and as shown in fig. 2, the wafer polishing apparatus further includes a polishing lint 40, and during a wafer polishing process, the polishing lint 40 is disposed in the polishing carrier groove 11 and located between the wafers 20 and 30 with adjustable thickness.
The groove depth h1 of the polishing carrier groove 11, the thickness h2 of the adjustable thickness polishing pad 20, the thickness h3 of the wafer 30 and the thickness h4 of the polishing cloth 40 are satisfied, wherein h2+ h3+ h4> h 1.
The polishing flannelette 40 is arranged in the polishing carrier groove 11 and between the thickness- adjustable polishing pads 20 and 30, so that the protection of the wafer 30 can be increased, the flatness of the polished wafer can be increased, and the requirement on the flatness of the thickness-adjustable polishing pad 20 can be properly relaxed. Wherein, the groove depth h1 of the polishing carrier groove 11, the thickness h2 of the thickness-adjustable polishing pad 20, the thickness h3 of the wafer 30 and the thickness h4 of the polishing flannelette 40 meet, wherein, when h2+ h3+ h4> h1, a part of the wafer is exposed outside the barrel carrier groove 11, thereby ensuring the full polishing of the wafer 30.
Optionally, the thickness of the polishing flannelette 40 is fixed, and the thickness h4 of the polishing flannelette 40 meets the requirement that the thickness h4 is more than or equal to 600 mu m and less than or equal to 620 mu m.
The reasonable arrangement of the thickness of the polishing flannelette 40 can relax the requirement range of the thickness of the polishing pad 20 with adjustable thickness, and increase the flexibility of the thickness adjustment of the polishing pad 20 with adjustable thickness.
Wherein, the polishing flannelette 40 is rotatable in the wafer polishing process, so as to ensure that the wafer can be polished normally.
Illustratively, the thickness h4 of the polishing flannelette 40 can be fixed to be 610 μm, and the thickness adjustable pad 20 can be adjusted to be 70 μm or more and 130 μm or less according to the thickness adjustment range 70 μm or more and h32 or more and 130 μm or less of the second wafer section 32 of the wafer 30, and when the groove depth h1 of the polishing carrier groove 11, the thickness h2 of the polishing pad 20, the thickness h3 of the wafer 30 and the thickness h4 of the polishing flannelette 40 satisfy h2+ h3+ h4> h1, the thickness adjustable range is 70 μm + h1-h3-h4 or more and h2 or more and 130 μm + h1-h3-h4, for example, when the wafer is 600 μm, the groove depth of the polishing carrier groove is 1320 μm, and the thickness adjustable range 180 μm or more and h2 or less and 260 μm or more of the polishing pad 20, so as to achieve the polishing of different wafer thicknesses and improve the flatness of the wafer.
The polishing lint 40 also has a certain service life, and when the polishing time reaches 1500min, the polishing lint 40 becomes thinner gradually, and at this time, a pad thicker than a polishing pad with a predetermined thickness needs to be replaced or the polishing lint needs to be replaced during the polishing process.
Optionally, the polishing carrier 10 may rotate.
The polishing carrier 10 is arranged on a rotatable polishing disk, and the polishing carrier 10 continuously rotates in the polishing process, so that the polishing surface of the wafer 30 can be uniformly polished, and the flatness of the wafer 30 is improved.
In the embodiment of the invention, during the polishing process of the wafer, the thickness-adjustable pad 20 adjusts the thickness range of the thickness-adjustable pad 20 according to the condition that the thickness h32 of the second wafer subsection 32 exposed by the wafer 30 is 70 μm or more or less than h32 or less than 130 μm, thereby completing the polishing of the wafer 30. The problems that in the prior art, the service life of the polishing carrier is shortened, the flatness of the wafer is reduced in the later period and the like caused by the fact that the polishing carrier with different groove depths is replaced to polish the wafer are solved, the service life of the wafer polishing device is prolonged, the flatness of the wafer is improved, and the polishing process is simple and easy to implement and the like are achieved.
Example two
Fig. 3 is a schematic flow chart of a wafer polishing method according to a second embodiment of the present invention, in which a wafer 30 is polished by a wafer polishing apparatus, referring to fig. 1-3, the wafer polishing apparatus includes a polishing carrier 10 and an adjustable-thickness polishing pad 20, the polishing carrier 10 includes a polishing carrier groove 11, and the wafer polishing method includes:
s110, determining a wafer to be polished and acquiring the thickness of the wafer.
And S120, determining the thickness of the polishing pad with the adjustable thickness according to the thickness of the wafer and the groove depth of the polishing carrier groove.
Wherein the groove depth h1 of the polishing carrier groove 11, the thickness h2 of the adjustable thickness polishing pad 20 and the thickness h3 of the wafer 30 satisfy h2+ h3> h 1.
S130, the polishing pad with the adjustable thickness is arranged in the groove of the polishing carrier, and the wafer is arranged on the polishing pad with the adjustable thickness and is polished.
During the wafer polishing process, the thickness of the polishing pad with the adjustable thickness can be determined according to the thickness of the wafer and the groove depth of the groove of the polishing carrier, the polishing pad with the adjustable thickness can be switched at will within the adjustable range of the polishing pad with the adjustable thickness, the polishing carrier does not need to be replaced, the polishing process is simple and easy to implement, the service life of the polishing carrier is prolonged, and the flatness of the wafer is improved.
Optionally, fig. 4 is a schematic flowchart of another wafer polishing method according to a second embodiment of the present invention, and as shown in fig. 4, the determining the thickness of the polishing pad with an adjustable thickness according to the thickness of the wafer and the groove depth of the polishing carrier groove includes:
and S121, determining the thickness of the thickness-adjustable polishing pad according to the thickness of the wafer, the groove depth of the polishing carrier groove and the thickness of the second wafer subsection.
Optionally, during the wafer polishing process, the wafer 30 includes a first wafer subsection 31 located within the polishing carrier slot 11 and a second wafer subsection 32 extending beyond the polishing carrier slot 11, and the thickness h32 of the second wafer subsection 32 satisfies a range of 70 μm or more and a range of h32 or more and a range of 130 μm or less.
Wherein the thickness h2 of the adjustable-thickness polishing pad, the groove depth h1 of the polishing carrier groove, the thickness h3 of the wafer and the thickness h32 of the second wafer section satisfy h 2-h 32+ h1-h3, and h 2-130 μm + h1-h3, wherein the thicknesses h32 of the adjustable-thickness polishing pad, the groove depth h1 of the polishing carrier groove and the second wafer section are equal to or less than 70 μm + h1-h 3.
Wherein, the same thickness adjustable pad 20 can adjust the range of 70 μm or more and h32 or more and 130 μm or less according to the thickness of the second wafer subsection 32 of the wafer 30, and when the groove depth h1 of the polishing carrier groove 11, the thickness h2 of the thickness adjustable polishing pad 20 and the thickness h3 of the wafer 30 meet h2+ h3> h1, the thickness adjustable range is 70 μm + h1-h3 or more and h2 or more and 130 μm + h1-h3, so as to realize the manual flexible replacement of different thickness adjustable polishing pads 20, achieve the polishing of wafers with different thicknesses and improve the flatness of the wafers.
In an embodiment of the present invention, the wafer to be polished is first determined and the thickness of the wafer is obtained, and then the thickness of the adjustable thickness polishing pad 20 is determined according to the thickness of the wafer 30, the depth of the groove of the polishing carrier 11, and the thickness of the second wafer segment 32. The wafer 30 is polished by disposing the thickness-adjustable polishing pad 20 in the polishing carrier groove 11 and disposing the wafer 30 on the thickness-adjustable polishing pad 20. When the thickness h32 of the second wafer subsection 32 is equal to or greater than 70 μm and equal to or greater than h32 and equal to or greater than 130 μm, the thickness adjusting range of the thickness adjustable pad 20 is 70 μm + h1-h3 and equal to or greater than h2 and equal to or greater than 130 μm + h1-h3, wafers with different thicknesses can be polished by switching different thickness adjustable polishing pads according to requirements in the polishing process, the polishing carrier 20 does not need to be replaced, the service life of the polishing carrier 20 is prolonged, the flatness of the wafers is improved, and the polishing process is simple and easy to implement.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims (10)

1. A wafer polishing device is characterized by comprising a polishing carrier and an adjustable-thickness polishing pad, wherein the polishing carrier comprises a polishing carrier groove, the adjustable-thickness polishing pad is arranged in the polishing carrier groove, and a wafer is arranged on the adjustable-thickness polishing pad in the wafer polishing process;
the groove depth h1 of the polishing carrier groove, the thickness h2 of the adjustable thickness polishing pad, and the thickness h3 of the wafer satisfy h2+ h3> h 1.
2. The wafer polishing apparatus of claim 1, wherein the thickness of the adjustable thickness polishing pad is less than the depth of the polishing carrier groove.
3. The wafer polishing apparatus as set forth in claim 2 wherein during wafer polishing, the wafer includes a first wafer section located within the polishing carrier slot and a second wafer section extending beyond the polishing carrier slot;
the thickness h32 of the second wafer subsection is equal to or greater than 70 μm and equal to or less than h32 and equal to or less than 130 μm.
4. The wafer polishing apparatus as claimed in claim 3, wherein the thickness h2 of the adjustable thickness polishing pad satisfies h2 ═ h32+ h1-h3, 70 μm + h1-h3 ≤ h2 ≤ 130 μm + h1-h 3.
5. The wafer polishing apparatus as set forth in claim 1, wherein the groove depth of the polishing carrier groove is fixed;
the groove depth h1 of the polishing carrier groove satisfies the condition that h1 is more than or equal to 1200 mu m and less than or equal to 1400 mu m.
6. The wafer polishing apparatus as claimed in claim 1, further comprising a polishing cloth, wherein the polishing cloth is disposed in the polishing carrier groove and between the thickness-adjustable polishing pad and the wafer during wafer polishing;
the groove depth h1 of the polishing carrier groove, the thickness h2 of the thickness-adjustable polishing pad, the thickness h3 of the wafer and the thickness h4 of the polishing flannelette meet, wherein h2+ h3+ h4> h 1.
7. The wafer polishing apparatus as set forth in claim 4, wherein the thickness of the polishing cloth is fixed;
the thickness h4 of the polishing flannelette meets the requirement that h4 is more than or equal to 600 mu m and less than or equal to 620 mu m.
8. The wafer polishing apparatus as set forth in claim 1 wherein the polishing carrier is rotatable.
9. A wafer polishing method for polishing a wafer by using the wafer polishing apparatus according to any one of claims 1 to 8, the wafer polishing apparatus comprising a polishing carrier including a polishing carrier groove and a thickness-adjustable polishing pad; the wafer polishing method is characterized by comprising the following steps:
determining a wafer to be polished and obtaining the thickness of the wafer;
determining the thickness of the polishing pad with the adjustable thickness according to the thickness of the wafer and the groove depth of the polishing carrier groove; wherein a groove depth h1 of the polishing carrier groove, a thickness h2 of the adjustable thickness polishing pad, and a thickness h3 of the wafer satisfy h2+ h3> h 1;
and arranging the polishing pad with the adjustable thickness in the polishing carrier groove, arranging the wafer on the polishing pad with the adjustable thickness, and polishing the wafer.
10. The wafer polishing method as claimed in claim 9, wherein during wafer polishing, the wafer includes a first wafer section located within the polishing carrier slot and a second wafer section extending beyond the polishing carrier slot; the thickness h32 of the second wafer subsection is equal to or more than 70 mu m and equal to or less than h32 and equal to or less than 130 mu m;
determining the thickness of the adjustable-thickness polishing pad according to the thickness of the wafer and the groove depth of the polishing carrier groove, comprising:
determining a thickness of the adjustable-thickness polishing pad based on the thickness of the wafer, the depth of the polishing carrier groove, and the thickness of the second wafer section; wherein the thickness h2 of the adjustable-thickness polishing pad, the groove depth h1 of the polishing carrier groove, the thickness h3 of the wafer and the thickness h32 of the second wafer section satisfy h 2-h 32+ h1-h3, and 70 μm + h1-h3-h 2-130 μm + h1-h 3.
CN201911311374.4A 2019-12-18 2019-12-18 Wafer polishing device and method Pending CN110900438A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113478336A (en) * 2021-06-29 2021-10-08 中国科学院长春光学精密机械与物理研究所 Device and method for manufacturing asphalt polishing pad
CN115990802A (en) * 2023-03-22 2023-04-21 之江实验室 Carrier and polishing apparatus

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