CN110824828B - Photomask and method for manufacturing display device - Google Patents
Photomask and method for manufacturing display device Download PDFInfo
- Publication number
- CN110824828B CN110824828B CN201911133180.XA CN201911133180A CN110824828B CN 110824828 B CN110824828 B CN 110824828B CN 201911133180 A CN201911133180 A CN 201911133180A CN 110824828 B CN110824828 B CN 110824828B
- Authority
- CN
- China
- Prior art keywords
- pattern
- photomask
- film
- light
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 56
- 238000000034 method Methods 0.000 title abstract description 21
- 238000002834 transmittance Methods 0.000 claims abstract description 78
- 238000012546 transfer Methods 0.000 claims abstract description 76
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 230000005540 biological transmission Effects 0.000 claims description 56
- 239000000463 material Substances 0.000 claims description 32
- 230000010363 phase shift Effects 0.000 claims description 25
- 230000003287 optical effect Effects 0.000 claims description 15
- 238000001039 wet etching Methods 0.000 claims description 14
- 238000005286 illumination Methods 0.000 claims description 5
- 238000010030 laminating Methods 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 239000010408 film Substances 0.000 description 194
- 230000000052 comparative effect Effects 0.000 description 25
- 238000005530 etching Methods 0.000 description 23
- 230000000694 effects Effects 0.000 description 16
- 238000013461 design Methods 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 239000010410 layer Substances 0.000 description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- 238000000059 patterning Methods 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000013041 optical simulation Methods 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000012788 optical film Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Geometry (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention provides a photomask and a method for manufacturing a display device. The present invention provides an excellent photomask which is advantageously suitable for an exposure environment of a mask for manufacturing a display device and can stably transfer a fine pattern, and a manufacturing method thereof. A photomask comprising a transfer pattern formed on a transparent substrate, wherein the transfer pattern comprises a main pattern having a diameter W1 (μm), an auxiliary pattern having a width d (μm) and disposed in the vicinity of the main pattern, and a low-transmittance portion disposed outside a region where the main pattern and the auxiliary pattern are formed, the phase difference between the representative wavelengths of the main pattern and the auxiliary pattern being substantially 180 degrees, and the diameters W1, the width d, the transmittance T1 (%) of the auxiliary pattern, the transmittance T3 (%) of the low-transmittance portion, and the distance P (μm) between the center of the main pattern and the center of the auxiliary pattern in the width direction have a predetermined relationship.
Description
The present application is a divisional application, and the application name is "method for manufacturing photomask and display device" in which the application number of the original chinese country is 2015124801. X, the application date is 2015, 9, and 25.
Technical Field
The present invention relates to a photomask advantageously used for manufacturing a display device typified by a liquid crystal or an organic EL, and a method for manufacturing a display device using the photomask.
Background
Patent document 1 describes, as a photomask for manufacturing a semiconductor device, a phase shift mask in which 4 auxiliary light transmitting portions are arranged parallel to each side of a main light transmitting portion (hole pattern) and the phases of light of the main light transmitting portion and the auxiliary light transmitting portion are inverted.
Patent document 2 describes a large-sized phase shift mask having a transparent substrate and a semitransparent phase shift film formed on the transparent substrate.
Prior art literature
Patent literature
Patent document 1: japanese patent laid-open No. 3-15845
Patent document 2: japanese patent laid-open No. 2013-148892
Disclosure of Invention
Problems to be solved by the invention
At present, for display devices including liquid crystal display devices, EL display devices, and the like, improvement of display performance such as high definition, high speed display, and wide viewing angle is desired while being brighter and power-saving.
For example, in the thin film transistor (Thin Film Transistor, "TFT") used in the display device, the contact Kong Re formed in the interlayer insulating film among the plurality of patterns constituting the TFT does not have a function to reliably connect the patterns of the upper layer and the lower layer, and thus, an accurate operation cannot be ensured. On the other hand, in order to increase the aperture ratio of the display device as much as possible and to make a bright and power-saving display device, the aperture diameter of the contact hole is required to be sufficiently small. Accordingly, the aperture of the hole pattern provided in the photomask for forming such contact holes is also required to be miniaturized (for example, smaller than 3 μm). For example, a pore pattern having a pore diameter of 2.5 μm or less, and further a pore diameter of 2.0 μm or less is required, and in the near future, it is considered that it is also desirable to form a pattern having a pore diameter of 1.5 μm or less smaller than this. In view of such a background, a technique for manufacturing a display device capable of reliably transferring a minute contact hole is demanded.
In the field of photomasks for manufacturing semiconductor devices (LSI) which are significantly advanced in the miniaturization of patterns with higher integration than display devices, in order to obtain high resolution, an optical system having a high NA (Numerical Aperture ) (for example, 0.2 or more) has been used as an exposure device and the process of shortening the wavelength of exposure light has been advanced, and excimer lasers (single wavelengths of 248nm and 193nm, respectively) of KrF and ArF have been used in many cases.
On the other hand, in the field of photolithography for manufacturing a display device, the above-described method is not generally applied for improving resolution. As a known exposure apparatus for an LCD (liquid crystal display, liquid crystal display device) and the like, the NA is about 0.08 to 0.10, and a wide wavelength range including i line, h line, g line is used as an exposure light source, whereby productivity and cost tend to be more important than resolution and depth of focus.
However, in the manufacture of the display device as described above, the demand for miniaturization of the pattern has become unprecedentedly high. Here, when the technology for manufacturing a semiconductor device is directly applied to manufacturing a display device, there are several problems. For example, in order to convert to a high-resolution exposure apparatus having a high NA (numerical aperture), a large investment is required, and matching with the price of the display apparatus cannot be obtained. Alternatively, the change of the exposure wavelength (use of a short wavelength such as ArF excimer laser light at a single wavelength) is inherently difficult to apply to a display device having a large area, and, even if applicable, there is a disadvantage that considerable investment is required in addition to a reduction in production efficiency.
Further, as described later, there are various problems that are different from a photomask for manufacturing a semiconductor device and that are peculiar to the photomask for manufacturing a display device.
Based on the above, it is practically difficult to directly transfer the photomask of patent document 1 to the display device manufacturing. The halftone phase shift mask described in patent document 2 has a description that the light intensity distribution is improved as compared with a binary mask, but there is room for further improvement in performance.
Accordingly, in a method for manufacturing a display device using a mask for manufacturing a display device, it is desirable to stably transfer a fine pattern onto a transfer target in order to overcome the above-described problems. Accordingly, an object of the present invention is to provide an excellent photomask which is advantageously suitable for an exposure environment of a mask for manufacturing a display device and which can stably transfer a fine pattern, and a method for manufacturing the same.
Means for solving the problems
In order to solve the above problems, the present invention has the following configuration. The present invention is a method for manufacturing a photomask characterized by the following configurations 1 to 14 and a display device characterized by the following configuration 15.
(constitution 1)
A configuration 1 of the present invention is a photomask including a transfer pattern formed on a transparent substrate, wherein the transfer pattern includes a main pattern having a diameter W1 (μm), an auxiliary pattern having a width d (μm) and disposed in the vicinity of the main pattern, and a low light transmission portion disposed outside a region where the main pattern and the auxiliary pattern are formed; a phase difference between a representative wavelength transmitting the main pattern and in a wavelength range of i-line to g-line and the representative wavelength transmitting the auxiliary pattern is substantially 180 degrees; when the transmittance of the light having the representative wavelength transmitting the auxiliary pattern is T1 (%), the transmittance of the light having the representative wavelength transmitting the low light transmission portion is T3 (%), and the distance between the center of the main pattern and the center of the auxiliary pattern in the width direction is P (μm), the following formulas (1) to (4) are satisfied.
0.8≤W1≤4.0…(1)
1.0<P≤5.0…(3)
T3<T1…(4)
(constitution 2)
The photomask according to the present invention, as set forth in the constitution 1, wherein the auxiliary pattern is obtained by forming a semi-transparent film on the transparent substrate, and the semi-transparent film has a transmittance of T1 (%) for the light of the representative wavelength.
(constitution 3)
In the present invention, the photomask according to the constitution 3 is characterized in that the transmittance T1 (%) of the semi-transparent film satisfies the following formula (5).
30≤T1≤80…(5)
(constitution 4)
The configuration 4 of the present invention is the photomask according to configuration 2 or 3, wherein the width d of the auxiliary pattern is 1 (μm) or more.
(constitution 5)
The configuration 5 of the present invention is the photomask according to any one of the configurations 2 to 4, wherein the main pattern is formed by exposing a part of the main surface of the transparent substrate, the auxiliary pattern is formed by forming the semi-transmissive film on the transparent substrate, and the low light-transmitting portion is formed by laminating the semi-transmissive film and the low light-transmitting film having a transmittance of T2 (%) of light of the representative wavelength in the order or in the reverse order on the transparent substrate.
(constitution 6)
The photomask according to the present invention, as set forth in any one of the above configurations 2 to 4, wherein the main pattern is formed by forming a cutout portion in a main surface of the transparent substrate, the auxiliary pattern is formed by forming the semi-transmissive film on the transparent substrate, and the low-transmittance portion is formed by laminating the semi-transmissive film and the low-transmittance film having a transmittance of T2 (%) of light of the representative wavelength in the order or in the reverse order on the transparent substrate.
(constitution 7)
The photomask according to the present invention, as set forth in any one of the configurations 2 to 6, wherein the semi-transparent film is made of a material containing Si and at least one of Zr, nb, hf, ta, mo and Ti, or a material containing an oxide, nitride, oxynitride, carbide, or oxynitride of these materials.
(constitution 8)
In the configuration 8 of the present invention, the auxiliary pattern is formed by exposing the transparent substrate, as in the configuration 1.
(constitution 9)
The photomask according to the present invention as defined in the constitution 9 is characterized in that the main pattern is formed by forming a cutout portion on the main surface of the transparent substrate, the auxiliary pattern is formed by exposing a part of the main surface of the transparent substrate, and the low light transmission portion is formed by forming a low light transmission film having a transmittance of T3 (%) of the light of the representative wavelength on the transparent substrate.
(constitution 10)
The photomask according to claim 8, wherein the main pattern is formed by exposing a part of the main surface of the transparent substrate, the auxiliary pattern is formed by forming a cutout portion in the main surface of the transparent substrate, and the low light transmission portion is formed by forming a low light transmission film having a transmittance of T3 (%) of the light of the representative wavelength on the transparent substrate.
(constitution 11)
The configuration 11 of the present invention is a photomask according to any one of the configurations 1 to 10, wherein the photomask is a photomask for forming a hole pattern having a transfer path W2 of 3.0 (μm) or less (W1 > W2) on a transfer object corresponding to the main pattern.
(constitution 12)
The photomask according to the present invention, as set forth in the constitution 11, is characterized in that when the difference W1-W2 between the diameter W1 of the main pattern and the transfer diameter W2 on the transfer target is set to be a deviation beta (μm), the following formula is satisfied
0.2≤β≤1.0…(6)。
(constitution 13)
The photomask according to the present invention, as set forth in any one of the above configurations 1 to 12, wherein the transmittance T3 (%) of the low-transmittance portion with respect to the light of the representative wavelength satisfies the following formula
T3<30…(7)。
(constitution 14)
The configuration 14 of the present invention is the photomask according to any one of the configurations 1 to 12, wherein the low light transmission portion does not substantially transmit the light of the representative wavelength.
(constitution 15)
A configuration 15 of the present invention is a method for manufacturing a display device, including the steps of: a step of preparing a photomask according to any one of claims 1 to 14; and exposing the transfer pattern with an exposure device having a Numerical Aperture (NA) of 0.08-0.20 and including at least one of an i-line, an h-line and a g-line, to form a hole pattern having a diameter W2 of 0.6-3.0 [ mu ] m on the transfer object.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present invention, an excellent photomask which is advantageously suitable for an exposure environment of a mask for manufacturing a display device and which can stably transfer a fine pattern, and a method for manufacturing the same can be provided.
Drawings
Fig. 1 is a schematic plan view of an example of a photomask of the present invention.
Fig. 2 is a schematic plan view (a) to (f) of another example of the photomask of the present invention.
Fig. 3 shows examples (a) to (f) of layer structures of the photomask of the present invention.
Fig. 4 is a schematic cross-sectional view and a schematic plan view showing an example of a manufacturing process of the photomask of the present invention.
Fig. 5 is a graph showing a schematic plan view, dimensions, and transfer performance obtained by optical simulation of photomasks of comparative examples 1-1 and 1-2 and example 1.
Fig. 6 is a diagram showing (a) an aerial image of light intensity formed on a transfer object and (b) a cross-sectional shape of a resist pattern formed thereby when photomasks of comparative examples 1-1 and 1-2 and example 1 are used.
Fig. 7 is a graph showing a plan view schematic diagram, dimensions, and transfer performance obtained by optical simulation of photomasks of comparative examples 2-1 and 2-2 and example 2.
Fig. 8 is a diagram showing (a) an aerial image of light intensity formed on a transfer object and (b) a cross-sectional shape of a resist pattern formed thereby when photomasks of comparative examples 2-1 and 2-2 and example 2 are used.
Detailed Description
When the CD (Critical Dimension, critical dimension, hereinafter, used in the meaning of pattern line width) of a transfer pattern included in a photomask is miniaturized, a step of precisely transferring the pattern onto a transfer object (a thin film to be subjected to etching processing or the like, also referred to as a processing object) becomes more difficult to implement. The resolution limit displayed as a standard on an exposure apparatus for a display device is often about 2 to 3 μm. In contrast, among the transfer patterns to be formed, patterns having a size close to or smaller than that of the transfer patterns have appeared. Further, since the area of the mask for manufacturing a display device is large as compared with the mask for manufacturing a semiconductor device, in practical production, it is very difficult to uniformly transfer a transfer pattern having a CD of less than 3 μm in plane.
Therefore, it is necessary to design elements other than the simple resolution (depending on the exposure wavelength and the numerical aperture of the exposure optical system) to obtain effective transfer performance.
Further, since the area of the transferred body (flat panel display substrate) is large, it can be said that in the step of performing pattern transfer by exposure, it is in an environment where defocus due to the surface flatness of the transferred body is likely to occur. In this environment, it is extremely interesting to sufficiently secure the degree of freedom (DOF) of the focus at the time of exposure.
It is known that a photomask for manufacturing a display device has a large size, and it is not easy to ensure uniformity of CD (line width) at all positions in a plane in wet processing (development and wet etching) in a photomask manufacturing step. In order to bring the final CD accuracy into the prescribed tolerance range, it is critical to ensure a sufficient depth of focus (DOF) in the exposure step, and accordingly other properties are expected not to deteriorate.
A photomask is provided with a transfer pattern formed by patterning a semi-transmissive film and a low-transmissive film formed on a transparent substrate. A schematic plan view of a transfer pattern included in a photomask of the present invention is illustrated in fig. 1.
As shown in fig. 1, the transfer pattern formed on the transparent substrate includes a main pattern having a diameter W1 (μm) and an auxiliary pattern having a width d (μm) disposed in the vicinity of the main pattern. In addition, a low light transmission portion is formed in a region other than the main pattern and the auxiliary pattern.
Here, the transmittance of light of a representative wavelength in the wavelength range of i-line to g-line of the transmission auxiliary pattern is T1, and the transmittance of light of the representative wavelength of the transmission low light transmission portion is T3. The distance between the center of the main pattern and the center of the auxiliary pattern in the width direction is P (μm). In this case, the photomask of the present invention satisfies the following relationship.
0.8≤W1≤4.0…(1)
1.0<P≤5.0…(3)
T3<T1…(4)
In the above formula, T1 preferably satisfies T1. Gtoreq.30.
The light transmittance T1 and T3 herein are light transmittance based on the transmittance of the transparent substrate, and are determined by the layer configuration of the corresponding portion.
A schematic cross-sectional view of such a transfer pattern can be shown in fig. 3 (a), for example. Mode 1 of the photomask according to the present invention will be described with reference to fig. 3 (a).
In this embodiment, the main pattern is formed of a light-transmitting portion exposed from the transparent substrate. It is to be noted that a film having high transmittance may be formed on the main pattern. However, in order to obtain the maximum transmittance, it is preferable that the transparent substrate is exposed without forming a film having a high transmittance on the main pattern.
The auxiliary pattern of the present embodiment is constituted by a semi-transparent portion having a semi-transparent film formed on a transparent substrate. The semi-transmissive film has a phase shift amount for shifting light of a representative wavelength in a wavelength range of i-line to g-line by approximately 180 degrees, and has a transmittance of T1 (%) for the representative wavelength. The portion surrounding the main pattern and the auxiliary pattern is a low light transmission portion in which at least a low light transmission film is formed on the transparent substrate. That is, in the transfer pattern shown in fig. 1, the region other than the region where the main pattern and the auxiliary pattern are formed becomes the low light transmission portion. As shown in fig. 3 (a), in the present embodiment, the low light transmission portion is formed by laminating a semi-transmissive film and a low light transmission film on a transparent substrate. In the low light-transmitting portion, the semi-transmissive film and the low light-transmitting film having a transmittance of T2 (%) of light of the representative wavelength may be laminated on the transparent substrate in the order described above or in the reverse order.
The low light transmission portion of the photomask of the present invention has a predetermined low transmittance for a representative wavelength of exposure light. That is, the low-transmittance portion has a transmittance T3 (%) lower than that of the auxiliary pattern formed of the semi-transmissive portion for light of the representative wavelength in the wavelength range of i-line to g-line. Therefore, in the present embodiment (fig. 3 (a)) in which the low light-transmitting portion is formed by stacking the semi-light-transmitting portion and the low light-transmitting portion, the transmittance T3 (%) of the low light-transmitting portion may be adjusted by selecting the transmittance T2 (%) of the low light-transmitting film so that T3< T1 is reached by the stacking.
Here, when the diameter (W1) of the main pattern is set to 4 μm or less, a fine main pattern (hole pattern) having a diameter W2 (μm) (where W1> W2) can be formed on the transfer target in correspondence with the main pattern.
Specifically, W1 (μm) is preferably set to satisfy the relationship of the following formula (1):
0.8≤W1≤4.0…(1)。
in this case, the diameter W2 (μm) of the main pattern (hole pattern) formed on the transfer target is 3.0 (μm) or less, specifically, 0.6.ltoreq.w2.ltoreq.3.0.
In addition, the photomask of the present invention may be used for the purpose of forming a pattern of a fine size useful for the manufacture of a display device. For example, when the diameter W1 of the main pattern is 3.0 (μm) or less, the effect of the present invention can be more remarkably obtained. It is preferable that the diameter W1 (μm) of the main pattern is 1.0.ltoreq.W1.ltoreq.3.0.
The relationship between the diameter W1 and the diameter W2 may be w1=w2, but preferably W1> W2. That is, when β (μm) is used as the deviation value, β=w1—w2>0 (μm) may be 0.2.ltoreq.β.ltoreq.1.0, more preferably 0.2.ltoreq.β.ltoreq.0.8. When this is set, as will be described later, advantageous effects such as reduction in loss of the resist pattern on the transfer target can be obtained.
In the above, the diameter W1 of the main pattern represents the diameter of a circle or a value similar thereto. For example, when the shape of the main pattern is a regular polygon, the diameter W1 of the main pattern is the diameter of an inscribed circle. If the shape of the main pattern is square as shown in fig. 1, the diameter W1 of the main pattern is the length of one side. The diameter W2 of the transferred main pattern is also the diameter of a circle or a value similar to the diameter.
Of course, when finer patterns are desired, the present invention may be applied by setting W1 to 2.5 (μm) or less or 2.0 (μm) or further setting W1 to 1.5 (μm) or less.
The above-described preferable ranges relating to the setting of the diameter W1 of the main pattern in the photomask of the present invention, the diameter W2 of the main pattern on the transfer target, and the deviation are also applicable to the photomasks of the present invention relating to the following aspects 2 to 6.
For the representative wavelength of exposure light used for exposure of the photomask of the present invention having such a pattern for transfer, the phase difference between the main pattern and the auxiliary patternApproximately 180 degrees. That is, the phase difference between the light of the representative wavelength of the transmission main pattern and the representative wavelength of the transmission auxiliary pattern is +.>Approximately 180 degrees. Approximately 180 degrees means 120 degrees to 240 degrees. Preferably phase difference->150 to 210 degrees, more preferably 170 to 190 degrees.
The photomask of the present invention is effective in using exposure light including i line, h line, or g line, and therefore, exposure light including at least one of i line, h line, and g line may be used. Particularly, it is preferable to apply light of a wide wavelength including i-line, h-line, and g-line as the exposure light. In this case, the representative wavelength may be any of i-line, h-line, and g-line. For example, the photomask of the present invention may be configured with an h-line as a representative wavelength.
In order to form such a phase difference, the main pattern may be a light transmission portion formed by exposing the main surface of the transparent substrate, the auxiliary pattern may be a semi-light transmission portion formed by forming a semi-light transmission film on the transparent substrate, and the semi-light transmission film may be shifted by approximately 180 degrees with respect to the representative wavelength.
The preferred range of the phase difference between the main pattern and the auxiliary pattern is the same as the wavelength of the exposure light applied to the photomask of the present invention as described in the following modes 2 to 6.
In the photomask according to embodiment 1, that is, the photomask shown in fig. 3 (a), the light transmittance T1 of the semi-transmissive portion can be set as follows. That is, when the transmittance of the semi-transmissive film formed in the semi-transmissive portion to the representative wavelength is T1 (%), T1 is 30.ltoreq.80. More preferably 40.ltoreq.T1.ltoreq.75. The transmittance T1 (%) is the transmittance of the representative wavelength described above with reference to the transmittance of the transparent substrate.
In the photomask of the present invention, the low light transmission portion which is disposed in the region where the main pattern and the auxiliary pattern are formed and which is formed around the main pattern and the auxiliary pattern may be configured as follows.
The low light-transmitting portion may not substantially transmit exposure light (light of a representative wavelength in a wavelength range of i-line to g-line). In this case, in the case of a single low light-transmitting film, a low light-transmitting film (i.e., a light-shielding film) which does not substantially transmit the above-mentioned representative wavelength, the low light-transmitting film being a low light-transmitting film having a T2.ltoreq.0.01, i.e., an optical density OD.gtoreq.2, may be used; alternatively, a substantial light shielding film (optical density OD. Gtoreq.2) may be used as a laminated film of a low light transmission film and a semi-light transmission film.
Alternatively, the low light transmission portion may transmit exposure light within a predetermined range. However, when the exposure light is transmitted within a predetermined range, the transmittance T3 (%) of the low light transmission portion (here, when the semi-transmissive film and the low light transmission film are laminated, the transmittance of the laminated film) satisfies T3< T1. Preferably 0.01< T3<30, more preferably 0.01< T3.ltoreq.20. The transmittance T3 (%) is also the transmittance of the representative wavelength described above with reference to the transmittance of the transparent substrate.
In addition, when the exposure light is transmitted through the low light-transmitting portion at a predetermined transmittance, the phase difference between the transmitted light of the low light-transmitting portion and the transmitted light of the light-transmitting portionPreferably 90 degrees or less, more preferably 60 degrees or less. The term "90 degrees or less" means that the phase difference is (2 n-1/2) pi to (2n+1/2) pi (where n is an integer). As described above, the phase difference with respect to the representative wavelength included in the exposure light is calculated.
Therefore, in this case, as the property of the single low light-transmitting film used in the photomask of the present embodiment, it is preferable to have a transmittance (T2 (%)) (i.e., 0) of less than 30 (%)<T2<30 And the amount of phase shiftApproximately 180 degrees. Approximately 180 degrees means 120 degrees to 240 degrees. Preferably phase difference- >150 to 210 degrees, more preferably 170 to 190 degrees. Thus, the +.>In the above range.
The transmittance here is the transmittance of the representative wavelength when the transmittance of the transparent substrate is used as a reference, as in the above.
In the above-mentioned pattern for transfer, when the width of the auxiliary pattern is d (μm), the pattern is formed byWhen d.ltoreq.1.5 … (2) is established, the excellent effect of the present invention can be obtained. I.e.)>When the amount of light transmitted through the auxiliary pattern is within the above range, the amount of light transmitted through the main pattern and the amount of light transmitted through the auxiliary pattern interact with each other in good balance, thereby improving the transferability of the main pattern.
At this time, the distance between the center of the main pattern and the center of the auxiliary pattern in the width direction is set to a pitch P (μm), and the pitch P preferably satisfies a relationship of 1.0< p.ltoreq.5.0.
More preferably, the pitch P may be 1.5< P.ltoreq.4.5.
In the present invention, the auxiliary Pattern has an effect of generating an optical action similar to that of a Dense Pattern (Pattern) on a main Pattern isolated in design, and when the above-described relational expression is satisfied, exposure light transmitted through the main Pattern and the auxiliary Pattern exert a good interaction with each other, and can exhibit excellent transferability as shown in the examples described later.
Under the exposure conditions (exposure apparatus used) to which the photomask of the present invention is applied, the width d (μm) of the auxiliary pattern is a size equal to or smaller than the resolution limit, specifically, d is equal to or larger than 0.7, more preferably d is equal to or larger than 0.8, and even more preferably the width d (μm) of the auxiliary pattern is equal to or larger than 1 (μm).
In addition, d is preferably equal to or less than W1, and more preferably d < W1.
Further, the relational expression of the above (2) is more preferably the following formula (2) -1, and still more preferably the following formula (2) -2.
As described above, the main pattern of the photomask shown in fig. 1 is square, but the present invention is not limited thereto. For example, as illustrated in fig. 2, the main pattern of the photomask may have a rotationally symmetrical shape including octagons, circles. The center of the rotational symmetry may be the center of the reference P.
In addition, the auxiliary pattern of the photomask shown in fig. 1 has an octagonal shape, but the present invention is not limited thereto. The shape of the auxiliary pattern is preferably a shape obtained by making the shape of the rotation object symmetrical to the center of the hole pattern 3 times or more have a certain width. The shapes of the main pattern and the auxiliary pattern are preferably the shapes illustrated in fig. 2 (a) to (f), and the design of the main pattern and the design of the auxiliary pattern may be combined with each other in different shapes of fig. 2 (a) to (f).
For example, the outer periphery of the auxiliary pattern may be a square, a regular hexagon, a regular octagon, a regular decagon, or a regular polygon (preferably a regular 2 n-sided polygon, where n is an integer of 2 or more) or a circle. The shape of the auxiliary pattern is preferably a shape in which the outer periphery and the inner periphery of the auxiliary pattern are substantially parallel to each other, that is, a shape such as a regular polygon having a substantially constant width or a circular band is preferable. The band-like shape is called a polygonal band or a circular band. The shape of the auxiliary pattern is preferably a shape in which such a regular polygonal band or circular band surrounds the periphery of the main pattern. In this case, since the light amounts of the transmitted light of the main pattern and the transmitted light of the auxiliary pattern can be balanced to approximately the same level, the interaction of the light for obtaining the effect of the present invention can be easily obtained.
In particular, when the photomask of the present invention is used as a photomask for manufacturing a display device, that is, when the photomask of the present invention is used in combination with a photoresist for manufacturing a display device, the resist loss in a portion of a transferred body corresponding to an auxiliary pattern can be reduced.
Alternatively, the shape of the auxiliary pattern may be a shape in which a part of the polygonal band or the circular band is missing and does not completely surround the periphery of the main pattern. For example, as shown in fig. 2 (f), the shape of the auxiliary pattern may be a shape in which corners of the quadrangular tape are missing.
Other patterns may be used in addition to the main pattern and the auxiliary pattern of the present invention as long as the effects of the present invention are not impaired.
An example of a method for manufacturing a photomask according to the present embodiment will be described below with reference to fig. 4.
As shown in fig. 4 (a), a photomask blank is prepared.
In this photomask blank, a semi-transparent film and a low-transmittance film are sequentially formed on a transparent substrate made of glass or the like, and a 1 st photoresist film is further coated.
The semi-transparent film is as follows: the transmittance of the transparent substrate is 30 to 80 (%) when any one of the i-line, h-line and g-line is used as a representative wavelength (30.ltoreq.T1.ltoreq.80 when T1 (%) is used as a transmittance), and more preferably 40 to 75 (%), and the phase shift amount for the representative wavelength is approximately 180 degrees. With such a semi-transmissive film, the transmitted light phase difference between the main pattern constituted by the light-transmissive portion and the auxiliary pattern constituted by the semi-transmissive portion can be made approximately 180 degrees. Such a semi-transmissive film shifts the phase of light of a representative wavelength in the wavelength range of i-line to g-line by approximately 180 degrees. As a method for forming the semi-transparent film, a known method such as sputtering can be applied.
The semi-transparent film satisfies the transmittance and the retardation described above, and is preferably made of a material that can be wet etched as described below. However, if the amount of side etching generated during wet etching is too large, defects such as degradation of CD precision and damage of the upper layer film due to undercut may occur, and therefore, the range of film thickness is preferably set toThe following is given. For example +.>More preferably +.>Here, CD is Critical Dimension (critical dimension), and is used in the meaning of pattern line width in this specification.
In order to satisfy these conditions, the refractive index of the semi-transparent film material to the representative wavelength (for example, h line) contained in the exposure light is preferably 1.5 to 2.9. More preferably 1.8 to 2.4.
In order to sufficiently exhibit the phase shift effect, it is preferable that the pattern cross section (etched surface) generated by the wet etching is nearly perpendicular to the main surface of the transparent substrate.
In view of the above properties, the film material of the semi-transparent film may be composed of a material containing Si and at least one of Zr, nb, hf, ta, mo, ti, or a material containing an oxide, nitride, oxynitride, carbide, or oxynitride of these materials.
A low light transmission film is formed on the semi-transparent film of the photomask blank. As a film formation method, a known method such as a sputtering method can be applied similarly to the case of a semi-transparent film.
The low light transmission film of the photomask blank may be a light-shielding film that does not substantially transmit exposure light. Alternatively, the light-transmitting film may be a low-light-transmitting film having a predetermined low transmittance for the representative wavelength of the exposure light. The low light-transmitting film used in the production of the photomask of the present invention has a transmittance T2 (%) lower than that of the semi-transmitting film for light of a representative wavelength in the wavelength range of i-line to g-line. T2 may be substantially zero (0.01 or less).
On the other hand, in the case where the low light-transmitting film is capable of transmitting exposure light, it is required that the transmittance and the phase shift amount of the low light-transmitting film with respect to the exposure light can reach the transmittance and the phase shift amount of the low light-transmitting portion of the photomask of the present invention. It is preferable that the transmittance T3 (%) of light having a representative wavelength of exposure light in a laminated state of the low light-transmitting film and the semi-transmitting film is 0.01<T3<30. Preferably 0.01<T3 is less than or equal to 20, in addition, the phase shift amountIs 90 (degrees) or less, more preferably 60 (degrees) or less.
As a property of a single low light-transmitting film, it is preferable that the above-described light of representative wavelength is not substantially transmitted or that the film has a transmittance (T2 (%)) (i.e., 0<T2<30 And the amount of phase shift)Approximately 180 degrees. Approximately 180 degrees means 120 degrees to 240 degrees. Preferably phase difference- >150 to 210 degrees, more preferably 170 to 190 degrees.
The material of the low light-transmitting film of the photomask blank may be Cr or a compound thereof (oxide, nitride, carbide, oxynitride or oxynitride), or may be silicide of a metal containing Mo, W, ta, ti or the above-mentioned compound of the silicide. However, the material of the low light-transmitting film of the photomask blank is preferably a material which can be wet-etched similarly to the semi-light-transmitting film and has etching selectivity to the material of the semi-light-transmitting film. That is, it is preferable that the low light-transmitting film has resistance to an etchant of the semi-transmitting film and that the semi-transmitting film has resistance to an etchant of the low light-transmitting film.
A 1 st photoresist film is further coated on the low light transmission film of the photomask blank. The photomask of the present invention is preferably drawn by a laser drawing device, and therefore, a photoresist suitable for the same is used. The 1 st photoresist film may be positive type or negative type, and will be described below as positive type.
Next, as shown in fig. 4 b, the 1 st photoresist film is drawn by using a drawing device based on drawing data based on the pattern for transfer (1 st drawing). Then, the low light-transmitting film is wet etched using the 1 st resist pattern obtained by development as a mask. Thereby, an area as a low light-transmitting portion is defined, and an area of an auxiliary pattern (low light-transmitting film pattern) surrounded by the low light-transmitting portion is defined. As the etching liquid (wet etchant) for performing wet etching, a known etching liquid having a composition suitable for the low light-transmitting film to be used can be used. For example, in the case of a Cr-containing film, ammonium ceric nitrate or the like may be used as a wet etchant.
Next, as shown in fig. 4 (c), the 1 st resist pattern is stripped.
Next, as shown in fig. 4 (d), a 2 nd photoresist film is coated on the entire surface including the formed low light transmission film pattern.
Next, as shown in fig. 4 (e), the 2 nd photoresist film is subjected to 2 nd drawing, and a 2 nd resist pattern formed by development is formed. Wet etching of the semi-transparent film is performed using the 2 nd resist pattern and the low-transparent film pattern as masks. By this etching (development), a region of the main pattern constituted by the light transmitting portion exposed from the transparent substrate is formed. In the case of the 2 nd resist pattern, the drawing data drawn in the 2 nd resist pattern is preferably size-controlled as follows: the 2 nd resist pattern covers the region as the auxiliary pattern and has an opening in the region where the main pattern is formed, which is constituted by the light-transmitting portion, and the edge of the low light-transmitting film is exposed from the opening. This can absorb the misalignment occurring between the 1 st drawing and the 2 nd drawing, and can prevent degradation of the CD accuracy of the transfer pattern. This is an effect obtained by utilizing the etching selectivity of the materials of the low light-transmitting film and the semi-transmitting film to the films of each other.
In the photomask of the present embodiment, the semi-transparent film and the low-transparent film may be formed of a material having a common etching property without etching selectivity, and the etching stopper film may be provided between the two films.
That is, by controlling the size of the 2 nd resist pattern at the time of drawing the 2 nd pattern in this manner, when an isolated hole pattern is to be formed on the transfer target, the patterning of the light shielding film and the semi-transmissive film is not shifted, and therefore, in the transfer pattern illustrated in fig. 1, the centers of gravity of the main pattern and the auxiliary pattern can be precisely aligned.
The wet etchant for the semi-transparent film is appropriately selected according to the composition of the semi-transparent film.
Next, as shown in fig. 4 (f), the 2 nd resist pattern is stripped, thereby completing the photomask of the present invention shown in fig. 1.
In the manufacture of photomasks for display devices, there are dry etching and wet etching as etching used in patterning an optical film such as a light shielding film formed on a transparent substrate. Any etching may be used, but in the present invention, wet etching is particularly advantageous. This is because the size of the photomask for the display device is relatively large, and there are a large variety of sizes. In the production of such a photomask, if dry etching using a vacuum chamber is applied, efficiency may be poor for the size of the dry etching apparatus and the production process.
However, there are also problems associated with the application of wet etching in the manufacture of such photomasks. Since wet etching has an isotropic etching property, when a predetermined film is etched in the depth direction to be eluted, etching is also performed in a direction perpendicular to the depth direction. For example, when a slit is formed by etching a semi-transparent film having a film thickness of F (nm), the opening of a resist pattern as an etching mask is smaller than a desired slit width by only 2F (nm) (that is, F (nm) on one side), but it is more difficult to maintain the dimensional accuracy of the opening of the resist pattern as a slit having a finer width is formed. Therefore, it is useful to set the width d of the auxiliary pattern to 1 (μm) or more, preferably 1.3 (μm) or more.
In addition, when the film thickness F (nm) is large, the side etching amount is also increased, and therefore, it is advantageous to use a film material having a phase shift amount of approximately 180 degrees even when the film thickness is small, and as a result, it is desirable that the refractive index of the semi-transparent film is high for this wavelength. Therefore, it is preferable to use a material having a refractive index of 1.5 to 2.9, preferably 1.8 to 2.4, for the representative wavelength to form the semi-transparent film.
In addition to the above, the photomask of the present invention shown in fig. 1 may be a photomask having the same optical effect by using a different layer configuration.
Mode 2 of the present invention has a layer structure with a cross section shown in fig. 3 (b). As in embodiment 1, the planar schematic view of the photomask is shown in fig. 1, but the laminated structure is different in a cross-sectional view. That is, in the low light transmission portion shown in fig. 3 (b), the lamination order of the low light transmission film and the semi-light transmission film is reversed, and the low light transmission film is arranged on the substrate side.
In this case, the design of the pattern, the parameters thereof, and the optical effects thereof, which are the photomask of the present invention, are similar to those of the photomask of embodiment 1, and the modification shown in fig. 2 can be applied as the design. The physical properties of the film materials used may be the same.
However, the photomask according to claim 2 is slightly different from the photomask according to claim 1 in terms of the manufacturing method, and for this reason, the film material used is not necessarily the same as that of claim 1.
For example, in the 1 st aspect, as shown in fig. 4 (a), a photomask blank in which a semi-transparent film and a low-transparent film are laminated is prepared, and a photomask is manufactured by applying 2 photolithography steps thereto, whereas in the 2 nd aspect, it is necessary to prepare a photomask blank in which only a low-transparent film is formed on a transparent substrate.
Then, the low light transmission film is etched first to form a low light transmission film pattern. Next, a semi-transparent film is formed on the entire surface of the substrate on which the low-transparent film pattern is formed, and patterning is performed. In this case, it is preferable to select a material that can be patterned by wet etching in the same manner as in embodiment 1. However, in this embodiment, the low light-transmitting film and the semi-transmitting film do not necessarily have to have resistance to each other's etchant. That is, even if the two films do not have etching selectivity to each other, etching can be performed. Therefore, the degree of freedom in selecting the material is higher than that of embodiment 1.
Next, a 3 rd embodiment of the photomask of the present invention will be described with reference to fig. 3 (c). In this embodiment, the schematic plan view is similar to that of fig. 1, and the design of the pattern, the parameters thereof, and the optical effects thereof are similar to those of the photomask of embodiment 1 except that the modification shown in fig. 2 can be applied as the design.
The photomask of claim 3 shown in fig. 3 (c) differs from the photomasks of claim 1 and claim 2 in that the amount of phase shift of the light of the representative wavelength, which the semi-transmissive film has, is not limited to approximately 180 degrees, and in association with this, the transparent substrate is cut out by a predetermined amount in the main pattern portion. That is, in the main pattern of this embodiment, the cutout surface obtained by etching a predetermined amount of the cutout portion formed on the main surface is exposed, not a part of the main surface of the transparent substrate as a material. Further, the phase difference between the representative wavelengths in the wavelength range of i line to g line, which are transmitted through each other, is adjusted to be approximately 180 degrees between the auxiliary pattern formed with the semi-transmissive film and the main pattern formed with the cutout portion. As in the photomasks of aspects 1 and 2, the low-transmittance portion may be formed by laminating a semi-transmissive film and a low-transmittance film having a transmittance of T2 (%) of light of a representative wavelength on a transparent substrate in the above order or in the reverse order.
In the 1 st or 2 nd aspect, it is necessary to satisfy both the condition of the transmittance T1 and the condition that the phase difference of the representative wavelengths of the transmission main pattern and the auxiliary pattern is substantially 180 degrees by using the material and the film thickness of the semi-transparent film, but in the 3 rd aspect, there are the following advantages: the composition and film thickness of the semi-transparent film are preferably determined so as to satisfy the condition of the transmittance T1, and the adjustment of the phase difference can be performed by the amount of the main pattern removed.
In this respect, in the photomask of the present embodiment, the amount of phase shift of the light having the representative wavelength in the semi-transmissive film may be 90 degrees or less or 60 degrees or less. The phase difference between the representative wavelengths of the transmissive main pattern and the auxiliary pattern may be adjusted to approximately 180 degrees by the sum of the amount of the removed main pattern and the amount of the phase shift of the semi-transmissive film.
In addition, in the photomask according to embodiment 3, wet etching or dry etching is used for forming the cutout portion of the transparent substrate, but dry etching is more preferably applied. In the photomask of the present embodiment, an etching stopper film may be provided between the semi-transmissive film and the low-transmissive film.
For example, a photomask blank in which a semi-transmissive film and a low-transmissive film are laminated on a transparent substrate is prepared, first, both films of a main pattern portion are etched and removed, and then a step of etching the transparent substrate by digging may be applied. Next, the low light transmission film of the auxiliary pattern portion is etched and removed by the 2 nd photolithography step, whereby the photomask of the 3 rd aspect can be manufactured. In this case, the film material may be the same as in embodiment 1.
In the photomask of the 3 rd aspect, the lamination order of the semi-transmissive film and the low-transmissive film may be reversed in the same manner as in the relation between the 1 st aspect and the 2 nd aspect.
Next, a 4 th embodiment of the photomask of the present invention will be described with reference to fig. 3 (d). A schematic plan view of this approach is also shown in fig. 1. In the 4 th aspect, the cutout is formed in the transparent substrate of the main pattern portion as in the 3 rd aspect, but unlike the 3 rd aspect, the transparent substrate (a part of the main surface) of the auxiliary pattern portion is exposed without using a semi-transmissive film. Further, by selecting the depth of the main pattern portion, the phase difference of the representative wavelength light respectively transmitted through the main pattern and the auxiliary pattern is made substantially 180 degrees in the same manner as in modes 1 to 3.
In the 4 th aspect, since the semi-transparent film is not present in the auxiliary pattern portion, the transmittance (T1) is 100 (%). In this case, the number of film formation times can be reduced, and thus, according to claim 3, there can be obtained advantages of improving production efficiency and reducing probability of occurrence of defects.
In this case, t1=100 (%) is applied to formula (2),
namely, 0.5.ltoreq.d.ltoreq.1.5. 1.5 … (2). Preferably d < W1.
The phase shift amount of the light having the representative wavelength of the low light transmission film used in the photomask of claim 4 is not necessarily substantially 180 degrees, and is preferably 90 degrees or less. More preferably 60 degrees or less.
The photomask of claim 4 is similar to the photomask of claim 1 in that the design of the pattern shown in fig. 1, the parameters other than those described in detail, and the optical effects caused by them are similar to those of the photomask of claim 1, and the modification shown in fig. 2 can be applied as the design. The film material and physical properties of the low light transmission film may be the same as those of the mode 1. That is, the transmittance of the low light transmission portion to the representative wavelength is T3 (%), and the low light transmission portion may be a structure in which a low light transmission film having a transmittance of T2 (%) of the light of the representative wavelength is formed on a transparent substrate. I.e. the case of t2=t3.
In addition, the mode in which the cross-sectional structure of the main pattern and the auxiliary pattern in the mode 4 is reversed is mode 5 (fig. 3 (e)). In the main pattern of the 5 th aspect, a part of the main surface of the transparent substrate is exposed, and the auxiliary pattern is a cutout portion formed on the main surface of the transparent substrate. That is, instead of forming the transparent substrate cutout portion of the main pattern portion, the transparent substrate of the auxiliary pattern portion is cutout, whereby the phase difference of the light of the representative wavelength transmitting the main pattern and the auxiliary pattern is made substantially 180 degrees. In this case, the plan view design and the optical effect thereof are also the same as those of embodiment 4. There is no particular difference in the method of producing the same, the film material to be used, and the like. Therefore, the low light-transmitting portion of claim 5 is a low light-transmitting film having a transmittance T2 (%) of light of a representative wavelength formed on the transparent substrate.
The 6 th aspect of the present invention shown in fig. 3 (f) shows the possibility of adding a light shielding film pattern to the configuration employed in the 1 st to 5 th aspects (the photomask cross-sectional schematic diagram of the 1 st aspect is typically used in fig. 3 (f)). This approach is worth considering in the case of low light transmission films having substantial transmittance.
That is, in the vicinity of the main pattern and the auxiliary pattern, the interference effect of the light of opposite phases is utilized, but in the region of the low light transmission portion apart from the region, there is no need to transmit the light of the low light transmission film, or there is a risk of causing a disadvantage that the amount of the residual film of the resist pattern formed on the transferred body is reduced. In the case where it is desired to eliminate such a risk, it is also useful to add a light shielding film pattern to a region of the low light transmission portion apart from the main pattern and the auxiliary pattern, and to completely shield light.
Therefore, in the present invention, such a light shielding film pattern may be used as long as the effect is not impaired. The light shielding film is a film that does not substantially transmit exposure light (light of a representative wavelength in the range of i-line to g-line) and has an OD (optical density) of 2 or more. Examples of the material include a material containing chromium (Cr) as a main component.
The present invention includes a method of manufacturing a display device, including the steps of: the photomask of the present invention is exposed by an exposure device, and the transfer pattern is transferred onto a transfer object to form a hole pattern.
In the method for manufacturing a display device of the present invention, first, the photomask of the present invention described above is prepared. Then, the transfer pattern is exposed using an exposure device having an exposure light source with a Numerical Aperture (NA) of 0.08 to 0.20 and including at least one of an i-line, an h-line, and a g-line, and a hole pattern with a diameter W2 of 3.0 μm or less, preferably 0.6 to 3.0 μm is formed on the transfer object. The exposure light source of the exposure device preferably includes i line, h line, and g line. The exposure is usually performed with an equal magnification, which is advantageous.
As an exposure machine used when transferring a pattern for transfer using the photomask of the present invention, the following exposure machine of the system for performing the projection exposure of equal magnification can be mentioned. That is, the exposure apparatus is an exposure apparatus used for an LCD (liquid crystal display device) (or for an FPD or for a liquid crystal), and has a configuration in which a Numerical Aperture (NA) of an optical system is 0.08 to 0.15 (a coherence coefficient (σ) is 0.4 to 0.9), and exposure light includes at least one light source of an i-line, an h-line, and a g-line (also referred to as a wide wavelength light source). However, the present invention can be applied to an exposure apparatus having a numerical aperture NA of 0.10 to 0.20, and the effects of the present invention can be obtained.
Further, although the light source of the exposure apparatus used may use deformed illumination (annular illumination or the like), the excellent effect of the invention can be obtained by using non-deformed illumination.
In the present invention, as a raw material of the photomask of any of the 1 st to 3 rd aspects (and the 6 th aspect to which the present invention is applied), a photomask blank in which a semi-transparent film and a low-transparent film (and a light shielding film which is further used as needed) are laminated on a transparent substrate is used. Then, a resist film is further coated and formed on the surface, and a photomask is manufactured.
The physical properties, film quality and composition of the semi-transparent film and the low-transparent film are as described in the above description.
That is, the transmittance T1 of the semi-transmissive film of the photomask blank to a representative wavelength in the wavelength range of i line to g line is preferably 30 to 80 (%). The semi-transmissive film was set to have the following thickness: the refractive index for the representative wavelength is 1.5-2.9, and the phase shift amount is approximately 180 degrees. The semi-transparent film having such a refractive index has a desired phase shift even if the film thickness is sufficiently thin, and thus the wet etching time of the semi-transparent film can be shortened. As a result, side etching of the semi-transparent film can be suppressed.
In addition, in all modes of the photomask of the present invention, a photomask blank having a low light-transmitting film formed thereon can be used for manufacturing.
The low light-transmitting film may use a low light-transmitting film that does not substantially transmit light of the above-described representative wavelength, or has a transmittance of less than 30%. The amount of phase shift of the representative wavelength in the range of i-line to g-line of the low light transmission film may be substantially 180 degrees in the photomasks of aspects 1 and 2, and may be 90 degrees or less, more preferably 60 degrees or less in the photomasks of aspects 3, 4 and 5.
Examples
The transfer performance of the 3 types of photomasks shown in FIG. 5 (comparative examples 1-1 and 1-2 and example 1) was compared by optical simulation and evaluated. That is, optical simulations were performed on 3 photomasks having a transfer pattern for forming a hole pattern having a diameter of 2.0 μm on a transfer object, which transfer performance was exhibited when a common exposure condition was set.
Comparative example 1-1
As shown in fig. 5, the photomask of comparative example 1-1 has a pattern of a so-called binary mask composed of a light-shielding film pattern formed on a transparent substrate. In the photomask of comparative example 1-1, the main pattern formed of the light transmitting portion exposed from the transparent substrate was surrounded by the light shielding portion. The diameter W1 (side length of square) of the main pattern was 2.0 (. Mu.m).
Comparative examples 1 to 2
As shown in fig. 5, the photomask of comparative example 1-2 is a halftone phase shift mask formed by patterning a semi-transparent film having an exposure light transmittance (for h-line) of 5% and a phase shift amount of 180 degrees, and has a main pattern composed of a quadrangular light transmitting portion having a side length (diameter) (i.e., W1) of 2.0 (μm).
Example 1
As shown in fig. 5, the photomask of example 1 has the pattern for transfer according to the present invention. Here, the main pattern is a square having a side length (diameter) (i.e., W1) of 2.0 (μm), the auxiliary pattern is an octagonal band having a width d of 1.3 (μm), and a distance P between the center of the main pattern and the center of the width of the auxiliary pattern is 4 (μm).
The auxiliary pattern of the photomask according to the above-described embodiment 1 is formed by forming a semi-transparent film on a transparent substrate. The semi-transmissive film had a transmittance T1 of 70 (%) for exposure light (for h-line) and a phase shift of 180 degrees. The low light transmission portion surrounding the main pattern and the auxiliary pattern is formed of a light shielding film (OD > 2) that does not substantially transmit exposure light.
The photomasks of comparative examples 1-1 and 1-2 and example 1 were each a photomask having a hole pattern in which the diameter W2 was 2.0 μm (w1=w2; that is, the diameter W2 formed on the transferred object was the same as the diameter W1 of the main pattern of the transfer pattern of the photomask) formed on the transferred object. The exposure conditions applied in the simulation are as follows. That is, the exposure light has a wide wavelength including i line, h line, and g line, and the intensity ratio is g line to h line to i line=1:0.8:1.
The NA of the optical system of the exposure apparatus was 0.1, and the coherence coefficient σ was 0.5. The film thickness of the positive photoresist formed on the transferred body to obtain the cross-sectional shape of the resist pattern was 1.5. Mu.m.
The performance evaluation of each transfer pattern under the above conditions is shown in fig. 5. In addition, an aerial image of the light intensity formed on the transferred body and the cross-sectional shape of the resist pattern formed thereby are shown in fig. 6.
(evaluation of photomask optics)
For example, in order to transfer a small-diameter fine light transmission pattern, the outline of a transmitted light intensity curve, which is an aerial image formed on a transfer object by exposure light transmitted through a photomask, must be good. Specifically, it is critical that the slope of the peak forming the transmitted light intensity be steep and form a nearly vertical rise, that the absolute value of the light intensity of the peak be high (in the case of forming a secondary peak around, the intensity be relatively high enough), and the like.
In further quantitatively evaluating the photomask in terms of optical performance, the following index may be used.
(1) Depth of focus (DOF)
A dimension for achieving a depth of focus in a range of + -10% relative to the target CD. The higher the DOF value, the less susceptible to the flatness of a transfer object (for example, a panel substrate for a display device), the more reliable the formation of a fine pattern, and the suppression of variation in CD (line width) thereof.
(2) MEEF (Mask Error Enhancement Factor )
The MEEF is a numerical value indicating a ratio of a mask CD error to a CD error of a pattern formed on a transfer target, and the lower the MEEF is, the lower the CD error of the pattern formed on the transfer target can be.
(3)Eop
A particularly important evaluation item for a photomask for manufacturing a display device is Eop. Which is the amount of exposure light required to form the desired pattern size on the transferred body. In the manufacture of a display device, since the photomask has a large size (for example, a square or rectangle having a main surface with a side length of about 300 to 1400 mm), when a photomask having a low Eop value is used, the scanning exposure speed can be increased, and the production efficiency can be improved.
When the performance of each sample to be simulated was evaluated based on the above, as shown in fig. 5, the photomask of example 1 was extremely excellent in that the depth of focus (DOF) was increased to 55 μm or more, compared with the comparative example, and in this respect, stable transferability of the pattern was exhibited. This also means that the value of MEEF is small and the CD precision of the fine pattern is high.
In addition, the value of Eop for the photomask of example 1 is very small. This shows the following advantages: in the case of the photomask of embodiment 1, even when a large-area display device is manufactured, the exposure time is not increased or the exposure time can be shortened.
Further, referring to the aerial image of the transmitted light intensity shown in fig. 6, in the case of the photomask of example 1, the peak of the main pattern portion can be raised with respect to the level (Eth) of the photosensitive threshold value as the resist, and the slope of the peak can be made sufficiently vertical (nearly perpendicular with respect to the surface of the transferred body). This is advantageous over comparative examples 1-1 and 1-2. Here, by using light transmitted through the auxiliary pattern for the light intensity enhancement at the main pattern position, an increase in Eop and a decrease in MEEF are achieved. In the photomask of example 1, side peaks were generated on both sides of the position of the transferred image of the main pattern, but since the side peaks were Eth or less, there was no effect on the transfer of the main pattern.
The method of reducing the loss of the resist residue due to the side peak will be described below.
The design of the transfer pattern formed on the photomask was changed, and simulation was performed using the samples of comparative examples 2-1, 2-2 and 2 shown in fig. 7. The main pattern diameter W1 of each sample was set to 2.5 (μm), which is different from the above-described samples (comparative example 1-1, comparative example 1-2, and example 1).
Comparative example 2-1
As shown in fig. 7, the photomask of comparative example 2-1 is a pattern of a so-called binary mask composed of a light-shielding film pattern formed on a transparent substrate. In the photomask of comparative example 2-1, the main pattern formed of the light transmitting portion exposed from the transparent substrate was surrounded by the light shielding portion. The diameter W1 (side length of square) of the main pattern was 2.5 (. Mu.m).
Comparative examples 2-2
As shown in fig. 7, the photomask of comparative example 2-1 is a halftone phase shift mask formed by patterning a semi-transparent film having an exposure light transmittance (for h-line) of 5% and a phase shift amount of 180 degrees, and has a main pattern composed of a quadrangular light transmitting portion having a main pattern diameter W1 (side length of square) of 2.5 (μm).
Example 2
As shown in fig. 7, the photomask of example 2 is a pattern for transfer according to the present invention. The main pattern of the photomask of example 2 was a square having a diameter W1 (side length of square) of 2.5 (μm) of the main pattern, the auxiliary pattern was an octagonal band having a width d of 1.3 (μm), and a pitch P, which is a distance between the center of the main pattern and the center of the width of the auxiliary pattern, was 4 (μm). Here, the photomask of example 2 is also assumed to be the photomask of embodiment 1.
Using the photomasks of comparative example 2-1, comparative example 2-2 and example 2, a hole pattern having a diameter of 2.0 μm was formed in the transfer target. That is, the mask bias (β=w1-W2) of these photomasks was set to 0.5 (μm). The exposure conditions used in the simulation were the same as those of the photomasks of comparative examples 1-1 and 1-2 and example 1 described above.
From the data shown in fig. 7, it can be seen that the photomask of example 2, together with excellent DOF, MEEF, exhibited advantageous properties with respect to comparative examples 2-1 and 2-2. In the photomask of example 2, in particular, DOF reached a value exceeding 35 μm.
Further, the excellent characteristics of the sample of example 2 can be further clarified by referring to the aerial image of the transmitted light intensity and the cross-sectional shape of the resist pattern on the transferred body shown in fig. 8. As shown in fig. 8, when the photomask of example 2 was used, the peaks corresponding to the main pattern were extremely higher than the side peaks formed on both sides, and almost no resist damage was generated.
From the above results, it is clear that in the case of pattern transfer using the photomask of the present invention, an excellent transfer image can be obtained which is more easily applied to practical use for a transfer pattern in which the mask deviation β is about 0.5 (μm), specifically, in the range of 0.2 to 1.0 (μm).
From the above, the excellent performance of the photomask of the present invention was confirmed. In particular, if the photomask of the present invention is used, MEEF can obtain a value of 2.5 or less for a fine pattern of 2 μm or less, which is significant in the production of a display device in the future.
The use of the photomask of the present invention is not particularly limited. The photomask of the present invention can be preferably used in the production of a display device including a liquid crystal display device, an EL display device, and the like.
According to the photomask of the present invention, the interference between exposure light transmitted through both the main pattern and the auxiliary pattern can be controlled, zero order light can be reduced during exposure, and the proportion of ±1 order light can be relatively increased. Therefore, the aerial image of the transmitted light can be greatly improved.
As a use for advantageously obtaining such an effect, it is advantageous to use the photomask of the present invention for forming an isolated hole pattern such as a contact hole which is used in a liquid crystal or an EL device in many cases. As a kind of pattern, a pattern is often referred to as a Dense (Dense) pattern in which a plurality of patterns are arranged in a regular manner so that they optically affect each other, and an isolated pattern in which such a regular arrangement pattern does not exist in the surroundings. The photomask of the present invention is suitable for use when it is desired to form an isolated pattern on a transferred body.
The photomask of the present invention may be provided with an additional optical film or functional film within a range that does not impair the effects of the present invention. For example, in order to prevent the light transmittance of the low light transmittance film from adversely affecting inspection and position detection of the photomask, a light shielding film may be formed in a region other than the transfer pattern. In addition, an antireflection layer for reducing reflection of drawing light and exposure light may be provided on the surface of the semi-transparent film.
Claims (13)
1. A photomask comprising a transfer pattern formed on a transparent substrate, characterized in that,
which is a photomask for manufacturing a display device for forming an isolated hole pattern on a transferred body,
the transfer pattern includes:
a main pattern composed of a light-transmitting portion and having a diameter W1 μm,
Auxiliary pattern with width d μm arranged near the main pattern
A low light transmission portion disposed outside the region where the main pattern and the auxiliary pattern are formed,
for a representative wavelength of exposure light used for exposure of the photomask, a phase difference between the main pattern and the auxiliary pattern is 150 degrees to 210 degrees,
the auxiliary pattern has a shape of a regular polygon belt or a circular belt, surrounds the periphery of the main pattern via the low light transmission portion,
the main pattern is formed by exposing a portion of the main surface of the transparent substrate,
the main pattern has a cross-sectional shape formed by wet etching,
the auxiliary pattern is formed by forming a semi-transparent film having a transmittance T1% for the light of the representative wavelength on the transparent substrate,
the low-transmittance portion is formed by laminating the semi-transmissive film and a low-transmittance film having an optical density OD of 2 or more for the light of the representative wavelength on the transparent substrate in this order,
The semi-transparent film has a phase shift amount of 150 to 210 degrees with respect to the representative wavelength,
the refractive index n of the semi-transparent film to the representative wavelength is 1.5-2.9,
the semi-transparent film is made of a material capable of wet etching,
when the transmittance of the light having the representative wavelength transmitted through the low light transmission portion is T3%, the following formulas (1), (2) and (4) are satisfied,
0.8≤W1≤4.0…(1)
T3<T1…(4)。
2. the photomask of claim 1, wherein the transmittance T1% of the semi-transmissive film satisfies the following formula (5),
30≤T1≤80…(5)。
3. the photomask of claim 1, wherein the following formula is satisfied,
4. the photomask according to claim 1, wherein when a distance between a center of the main pattern and a center of the auxiliary pattern in a width direction is set to P μm,
1.0<P≤5.0。
5. the photomask according to any of claims 1 to 4, wherein the width d of the auxiliary pattern is 1 μm or more.
6. The photomask according to claim 1 or 2, wherein the semi-transmissive film is composed of a material containing Si and at least one of Zr, nb, hf, ta, mo and Ti, or a material containing an oxide, nitride, oxynitride, carbide, or oxynitride of these materials.
7. The photomask according to any one of claims 1 to 4, wherein the photomask is used for forming a hole pattern having a transfer diameter W2 of 3.0 μm or less on a transfer target corresponding to the main pattern, and satisfies W1> W2.
8. The photomask of claim 7, wherein when a difference W1-W2 between the diameter W1 of the main pattern and the transfer diameter W2 on the transfer target is set to be a deviation of β μm, the following expression is satisfied,
0.2≤β≤1.0…(6)。
9. the photomask of any of claims 1-4, wherein the host pattern is a regular polygon.
10. The photomask of any of claims 1-4, wherein the host pattern is square.
11. A method of manufacturing a display device, comprising the steps of:
a step of preparing a photomask according to any one of claims 1 to 10; and
and a step of exposing the transfer pattern by using an exposure device of a projection exposure system to form a hole pattern having a diameter W2 of 0.6 μm to 3.0 μm on the transfer object.
12. The manufacturing method of a display device according to claim 11, wherein the exposure device is a device having anamorphic illumination.
13. The manufacturing method of a display device according to claim 11, wherein the exposure device is a device having non-deformed illumination.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911133180.XA CN110824828B (en) | 2014-09-29 | 2015-09-25 | Photomask and method for manufacturing display device |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014199013A JP6335735B2 (en) | 2014-09-29 | 2014-09-29 | Photomask and display device manufacturing method |
| JP2014-199013 | 2014-09-29 | ||
| CN201510624801.XA CN105467745B (en) | 2014-09-29 | 2015-09-25 | Photomask and method for manufacturing display device |
| CN201911133180.XA CN110824828B (en) | 2014-09-29 | 2015-09-25 | Photomask and method for manufacturing display device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510624801.XA Division CN105467745B (en) | 2014-09-29 | 2015-09-25 | Photomask and method for manufacturing display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110824828A CN110824828A (en) | 2020-02-21 |
| CN110824828B true CN110824828B (en) | 2023-12-29 |
Family
ID=55605593
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911133180.XA Active CN110824828B (en) | 2014-09-29 | 2015-09-25 | Photomask and method for manufacturing display device |
| CN201510624801.XA Active CN105467745B (en) | 2014-09-29 | 2015-09-25 | Photomask and method for manufacturing display device |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510624801.XA Active CN105467745B (en) | 2014-09-29 | 2015-09-25 | Photomask and method for manufacturing display device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6335735B2 (en) |
| KR (3) | KR20160037806A (en) |
| CN (2) | CN110824828B (en) |
| TW (4) | TWI635353B (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6259509B1 (en) * | 2016-12-28 | 2018-01-10 | 株式会社エスケーエレクトロニクス | Halftone mask, photomask blank, and method of manufacturing halftone mask |
| JP6808665B2 (en) * | 2017-03-10 | 2021-01-06 | Hoya株式会社 | Photomask for manufacturing display devices and manufacturing method for display devices |
| JP7080070B2 (en) * | 2017-03-24 | 2022-06-03 | Hoya株式会社 | Manufacturing method of photomask and display device |
| JP6368000B1 (en) * | 2017-04-04 | 2018-08-01 | 株式会社エスケーエレクトロニクス | Photomask, photomask blank, and photomask manufacturing method |
| TWI659262B (en) * | 2017-08-07 | 2019-05-11 | 日商Ｈｏｙａ股份有限公司 | Method of repairing a photomask, method of manufacturing a photomask, photomask and method of manufacturing a display device |
| TWI691608B (en) * | 2017-09-12 | 2020-04-21 | 日商Ｈｏｙａ股份有限公司 | Method of repairing a photomask, method of manufacturing a photomask, photomask and method of manufacturing a display device |
| JP6731441B2 (en) * | 2018-05-01 | 2020-07-29 | Hoya株式会社 | Photomask and display device manufacturing method |
| KR102254646B1 (en) | 2018-07-30 | 2021-05-21 | 호야 가부시키가이샤 | Method for correcting photomask, method for manufacturing photomask, photomask, and method for manufacturing display device |
| KR102367141B1 (en) * | 2019-02-27 | 2022-02-23 | 호야 가부시키가이샤 | Photomask, method for manufacturing photomask, and method for manufacturing display device |
| JP7437959B2 (en) * | 2019-03-07 | 2024-02-26 | Hoya株式会社 | Modified photomask and display device manufacturing method |
| JP7383490B2 (en) * | 2020-01-07 | 2023-11-20 | 株式会社エスケーエレクトロニクス | photo mask |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0695360A (en) * | 1992-09-10 | 1994-04-08 | Fujitsu Ltd | Optical mask |
| JP2013140236A (en) * | 2011-12-29 | 2013-07-18 | Hoya Corp | Mask blank and method for manufacturing phase shift mask |
| CN103383523A (en) * | 2012-05-02 | 2013-11-06 | Hoya株式会社 | Photomask, image transfer method and manufacturing method of flat panel display |
| JP2013250478A (en) * | 2012-06-01 | 2013-12-12 | Hoya Corp | Photomask, method for manufacturing photomask, and method for transferring pattern |
| CN103777462A (en) * | 2012-10-25 | 2014-05-07 | Hoya株式会社 | Photomask used for display device manufacturing, and pattern transfer printing method |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0315845A (en) | 1989-06-14 | 1991-01-24 | Hitachi Ltd | Mask and production of mask |
| JP2000019710A (en) * | 1998-07-07 | 2000-01-21 | Hitachi Ltd | Manufacture of semiconductor integrated circuit device |
| JP2000181048A (en) * | 1998-12-16 | 2000-06-30 | Sharp Corp | Photomask, its production and exposure method using the same |
| JP3746497B2 (en) * | 2003-06-24 | 2006-02-15 | 松下電器産業株式会社 | Photo mask |
| JP4645076B2 (en) * | 2004-06-28 | 2011-03-09 | 凸版印刷株式会社 | Phase shift mask, manufacturing method thereof, and pattern transfer method |
| DE602006021102D1 (en) * | 2005-07-21 | 2011-05-19 | Shinetsu Chemical Co | Photomask blank, photomask and their manufacturing process |
| JP3971774B2 (en) * | 2005-10-17 | 2007-09-05 | 松下電器産業株式会社 | Pattern formation method |
| JP3971775B2 (en) * | 2005-10-17 | 2007-09-05 | 松下電器産業株式会社 | Photo mask |
| JP2007219038A (en) * | 2006-02-15 | 2007-08-30 | Hoya Corp | Mask blank and photomask |
| JP4484909B2 (en) * | 2007-07-24 | 2010-06-16 | キヤノン株式会社 | Original data creation method, original data creation method, exposure method, and original data creation program |
| US8709681B2 (en) * | 2009-04-16 | 2014-04-29 | Hoya Corporation | Mask blank, transfer mask, and film denseness evaluation method |
| JP5611581B2 (en) * | 2009-12-21 | 2014-10-22 | Hoya株式会社 | Mask blank and manufacturing method thereof, transfer mask and manufacturing method thereof |
| CN103998985B (en) * | 2011-12-21 | 2018-04-03 | 大日本印刷株式会社 | The manufacture method of large-scale phase-shift mask and large-scale phase-shift mask |
| JP6232709B2 (en) * | 2012-02-15 | 2017-11-22 | 大日本印刷株式会社 | Phase shift mask and resist pattern forming method using the phase shift mask |
-
2014
- 2014-09-29 JP JP2014199013A patent/JP6335735B2/en active Active
-
2015
- 2015-08-25 TW TW106130522A patent/TWI635353B/en active
- 2015-08-25 TW TW104127730A patent/TWI604264B/en active
- 2015-08-25 TW TW106130523A patent/TWI658320B/en active
- 2015-08-25 TW TW108109637A patent/TWI694302B/en active
- 2015-09-25 CN CN201911133180.XA patent/CN110824828B/en active Active
- 2015-09-25 KR KR1020150136927A patent/KR20160037806A/en active Search and Examination
- 2015-09-25 CN CN201510624801.XA patent/CN105467745B/en active Active
-
2017
- 2017-10-11 KR KR1020170129436A patent/KR102182505B1/en active IP Right Grant
-
2020
- 2020-11-18 KR KR1020200154522A patent/KR102304206B1/en active IP Right Grant
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0695360A (en) * | 1992-09-10 | 1994-04-08 | Fujitsu Ltd | Optical mask |
| JP2013140236A (en) * | 2011-12-29 | 2013-07-18 | Hoya Corp | Mask blank and method for manufacturing phase shift mask |
| CN103383523A (en) * | 2012-05-02 | 2013-11-06 | Hoya株式会社 | Photomask, image transfer method and manufacturing method of flat panel display |
| JP2013250478A (en) * | 2012-06-01 | 2013-12-12 | Hoya Corp | Photomask, method for manufacturing photomask, and method for transferring pattern |
| CN103777462A (en) * | 2012-10-25 | 2014-05-07 | Hoya株式会社 | Photomask used for display device manufacturing, and pattern transfer printing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105467745A (en) | 2016-04-06 |
| TW201928507A (en) | 2019-07-16 |
| TWI694302B (en) | 2020-05-21 |
| CN110824828A (en) | 2020-02-21 |
| KR20200132813A (en) | 2020-11-25 |
| JP2016071059A (en) | 2016-05-09 |
| TWI635353B (en) | 2018-09-11 |
| JP6335735B2 (en) | 2018-05-30 |
| TW201740184A (en) | 2017-11-16 |
| TW201627751A (en) | 2016-08-01 |
| TWI604264B (en) | 2017-11-01 |
| CN105467745B (en) | 2019-12-20 |
| KR102304206B1 (en) | 2021-09-17 |
| KR102182505B1 (en) | 2020-11-24 |
| TW201743129A (en) | 2017-12-16 |
| KR20160037806A (en) | 2016-04-06 |
| TWI658320B (en) | 2019-05-01 |
| KR20170117988A (en) | 2017-10-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110824828B (en) | Photomask and method for manufacturing display device | |
| KR102195658B1 (en) | Photomask, the method of manufacturing photomask, photomask blank and the method of manufacturing display device | |
| JP2016071059A5 (en) | ||
| CN109388018B (en) | Method for correcting photomask, method for manufacturing photomask, and method for manufacturing display device | |
| JP2011215226A (en) | Multi-level gradation photomask, method for manufacturing multi-level gradation photomask, blank for multi-level gradation photomask, and method for transferring pattern | |
| JP2016024264A5 (en) | ||
| TWI777402B (en) | Photomask for use in manufacturing a display device and method of manufacturing a display device | |
| JP7080070B2 (en) | Manufacturing method of photomask and display device | |
| JP7231667B2 (en) | Photomask blank for manufacturing display device, photomask for manufacturing display device, and method for manufacturing display device | |
| JP6731441B2 (en) | Photomask and display device manufacturing method | |
| JP2019012280A (en) | Photomask, production method thereof, photomask blank, and production method of display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |