CN110767541A - Wafer bonding method - Google Patents
Wafer bonding method Download PDFInfo
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- CN110767541A CN110767541A CN201911028550.3A CN201911028550A CN110767541A CN 110767541 A CN110767541 A CN 110767541A CN 201911028550 A CN201911028550 A CN 201911028550A CN 110767541 A CN110767541 A CN 110767541A
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- wafer
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- wafer bodies
- vacuum environment
- room temperature
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- 238000000034 method Methods 0.000 title claims abstract description 27
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000005498 polishing Methods 0.000 claims abstract description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000001035 drying Methods 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims abstract description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 6
- 230000003647 oxidation Effects 0.000 claims abstract description 6
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 6
- 235000012431 wafers Nutrition 0.000 claims description 144
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 5
- 229910002808 Si–O–Si Inorganic materials 0.000 claims description 5
- 239000012153 distilled water Substances 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 5
- OJCDKHXKHLJDOT-UHFFFAOYSA-N fluoro hypofluorite;silicon Chemical compound [Si].FOF OJCDKHXKHLJDOT-UHFFFAOYSA-N 0.000 claims description 5
- 238000010030 laminating Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 230000008646 thermal stress Effects 0.000 abstract description 5
- 238000000137 annealing Methods 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 238000002360 preparation method Methods 0.000 abstract description 2
- 238000012545 processing Methods 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 231100000252 nontoxic Toxicity 0.000 description 2
- 230000003000 nontoxic effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention provides a wafer bonding method, and relates to the technical field of semiconductor preparation. The wafer bonding method comprises the following steps: s1, preparing two wafer bodies, firstly immersing the two wafer bodies into a hydrofluoric acid solution to remove a natural oxidation layer on the surfaces of the wafer bodies, then taking out the wafer bodies to carry out drying treatment on the wafer bodies, and then polishing the front surfaces and the back surfaces of the two wafer bodies by using polishing equipment to keep the smoothness of the surfaces of the two wafer bodies; s2, pre-bonding two wafer bodies at room temperature, then transferring the bonded wafer bodies into a vacuum environment, extracting gas in the vacuum environment, adjusting the pressure in the vacuum environment to be within a range of 2x10 (-7) -4x10 (-7) Pa, and then introducing nitrogen into the vacuum environment. By processing the wafer, the wafer can be subjected to bonding reaction at room temperature without traditional high-temperature annealing, so that the wafer bonding efficiency is improved, the wafer bonding cost is reduced, and the thermal expansion and thermal stress between materials and structures are greatly reduced.
Description
Technical Field
The invention relates to the technical field of semiconductor preparation, in particular to a wafer bonding method.
Background
The semiconductor refers to a material with conductivity between a conductor and an insulator at normal temperature, and has wide application in radio, television and temperature measurement, for example, a diode is a device made of semiconductor, and a semiconductor refers to a material with controllable conductivity ranging from an insulator to a conductor, and the importance of the semiconductor is very great from the viewpoint of technology or economic development.
The wafer refers to a silicon wafer used for manufacturing a silicon semiconductor integrated circuit, and is called a wafer because the shape is circular; at present, the wafer bonding condition generally needs to be under a high temperature condition, not only the bonding efficiency is low, but also the wafer bonding cost is increased, and the materials and the structures still have obvious thermal expansion and thermal stress.
Disclosure of Invention
Technical problem to be solved
Aiming at the defects of the prior art, the invention provides a wafer bonding method, which solves the problems that the bonding efficiency is lower, the wafer bonding cost is increased and obvious thermal expansion and thermal stress still exist between materials and structures because the wafer bonding condition generally needs to be at a high temperature at present.
(II) technical scheme
In order to achieve the purpose, the invention is realized by the following technical scheme: a wafer bonding method comprises the following steps:
s1, preparing two wafer bodies, firstly immersing the two wafer bodies into a hydrofluoric acid solution to remove a natural oxidation layer on the surfaces of the wafer bodies, then taking out the wafer bodies to carry out drying treatment on the wafer bodies, and then polishing the front surfaces and the back surfaces of the two wafer bodies by using polishing equipment to keep the smoothness of the surfaces of the two wafer bodies;
s2, pre-bonding two wafer bodies at room temperature, transferring the bonded wafer into a vacuum environment, extracting gas in the vacuum environment, adjusting the pressure in the vacuum environment to be within a range of 2x10 (-7) -4x10 (-7) Pa, introducing nitrogen into the vacuum environment, and separating the bonded two wafer bodies after 1-2 hours;
s3, decomposing the residual oxide film on the surface of the wafer and desorbing hydrogen adsorbed on the surface until the oxide film on the surface of the wafer and the adsorbed hydrogen are completely removed, and then taking the wafer out of the vacuum environment;
s4, stacking the two wafer bodies together, adding a small amount of distilled water between the two wafer bodies, then placing the wafer bodies into a closed environment, adding a small amount of carbon tetrafluoride into the closed environment, treating the surface of the wafer by using fluorine-containing plasma, then taking out the two wafer bodies, laminating the two wafer bodies, and standing at room temperature;
s5, in the process of placing the wafer body at room temperature, the volume of the silicon oxyfluoride layer after absorbing water expands, so that the atomic scale contact area between the wafers is increased, and more Si-O-Si covalent bonds are formed.
Preferably, the concentration of the hydrofluoric acid solution in the step 1 is 2-10%.
Preferably, the rotation speed of the polishing device in the step 1 is 1000-.
Preferably, the volume of the carbon tetrafluoride added in the step 4 is 2-5% of the volume in the closed environment.
Preferably, the two wafer bodies in the step 4 are placed at room temperature for 20-24 hours.
(III) advantageous effects
The invention provides a wafer bonding method. The method has the following beneficial effects:
1. according to the wafer bonding method, the wafer is processed, so that the wafer can be subjected to bonding reaction at room temperature, the traditional high-temperature annealing is not needed, the wafer bonding efficiency is improved, the wafer bonding cost is reduced, and the thermal expansion and the thermal stress between materials and structures are greatly reduced.
2. The wafer bonding method is simple in operation mode, is non-toxic and harmless in the bonding process, and ensures the health of workers.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to a plurality of embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The first embodiment is as follows:
the embodiment of the invention provides a wafer bonding method, which comprises the following steps:
s1, preparing two wafer bodies, firstly immersing the two wafer bodies into a hydrofluoric acid solution to remove a natural oxidation layer on the surfaces of the wafer bodies, then taking out the wafer bodies to carry out drying treatment on the wafer bodies, and then polishing the front surfaces and the back surfaces of the two wafer bodies by using polishing equipment to keep the smoothness of the surfaces of the two wafer bodies;
s2, pre-bonding two wafer bodies at room temperature, transferring the bonded wafer into a vacuum environment, extracting gas in the vacuum environment, adjusting the pressure in the vacuum environment to 2x10 (-7) Pa, introducing nitrogen into the vacuum environment, and separating the bonded two wafer bodies after 1 hour;
s3, decomposing the residual oxide film on the surface of the wafer and desorbing hydrogen adsorbed on the surface until the oxide film on the surface of the wafer and the adsorbed hydrogen are completely removed, and then taking the wafer out of the vacuum environment;
s4, stacking the two wafer bodies together, adding a small amount of distilled water between the two wafer bodies, then placing the wafer bodies into a closed environment, adding a small amount of carbon tetrafluoride into the closed environment, treating the surface of the wafer by using fluorine-containing plasma, then taking out the two wafer bodies, laminating the two wafer bodies, and standing at room temperature;
s5, in the process of placing the wafer body at room temperature, the volume of the silicon oxyfluoride layer after absorbing water expands, so that the atomic scale contact area between the wafers is increased, and more Si-O-Si covalent bonds are formed.
Through processing the wafer, the wafer can carry out bonding reaction at room temperature, traditional high-temperature annealing is not needed, the wafer bonding efficiency is improved, the wafer bonding cost is reduced, thermal expansion and thermal stress between materials and structures are greatly reduced, the operation mode is simple, the bonding process is non-toxic and harmless, and the physical health of workers is guaranteed.
Wherein the concentration of the hydrofluoric acid solution in the step 1 is 2%, the working rotating speed of the polishing equipment in the step 1 is 1000r/min, the polishing time of the wafer body is 1min, the volume of the carbon tetrafluoride added in the step 4 is 2% of the volume in the closed environment, and the time for placing the two wafer bodies at room temperature in the step 4 is 20 hours.
Example two:
the embodiment of the invention provides a wafer bonding method, which comprises the following steps:
s1, preparing two wafer bodies, firstly immersing the two wafer bodies into a hydrofluoric acid solution to remove a natural oxidation layer on the surfaces of the wafer bodies, then taking out the wafer bodies to carry out drying treatment on the wafer bodies, and then polishing the front surfaces and the back surfaces of the two wafer bodies by using polishing equipment to keep the smoothness of the surfaces of the two wafer bodies;
s2, pre-bonding two wafer bodies at room temperature, transferring the bonded wafer into a vacuum environment, extracting gas in the vacuum environment, adjusting the pressure in the vacuum environment to 3x10 (-7) Pa, introducing nitrogen into the vacuum environment, and separating the bonded two wafer bodies after 1.5 hours;
s3, decomposing the residual oxide film on the surface of the wafer and desorbing hydrogen adsorbed on the surface until the oxide film on the surface of the wafer and the adsorbed hydrogen are completely removed, and then taking the wafer out of the vacuum environment;
s4, stacking the two wafer bodies together, adding a small amount of distilled water between the two wafer bodies, then placing the wafer bodies into a closed environment, adding a small amount of carbon tetrafluoride into the closed environment, treating the surface of the wafer by using fluorine-containing plasma, then taking out the two wafer bodies, laminating the two wafer bodies, and standing at room temperature;
s5, in the process of placing the wafer body at room temperature, the volume of the silicon oxyfluoride layer after absorbing water expands, so that the atomic scale contact area between the wafers is increased, and more Si-O-Si covalent bonds are formed.
Wherein the concentration of the hydrofluoric acid solution in the step 1 is 6%, the working rotating speed of the polishing equipment in the step 1 is 1500r/min, the polishing time of the wafer body is 1.5min, the volume of the carbon tetrafluoride added in the step 4 is 3.5% of the volume in the closed environment, and the time for placing the two wafer bodies at room temperature in the step 4 is 22 hours.
Example three:
the embodiment of the invention provides a wafer bonding method, which comprises the following steps:
s1, preparing two wafer bodies, firstly immersing the two wafer bodies into a hydrofluoric acid solution to remove a natural oxidation layer on the surfaces of the wafer bodies, then taking out the wafer bodies to carry out drying treatment on the wafer bodies, and then polishing the front surfaces and the back surfaces of the two wafer bodies by using polishing equipment to keep the smoothness of the surfaces of the two wafer bodies;
s2, pre-bonding two wafer bodies at room temperature, transferring the bonded wafer into a vacuum environment, extracting gas in the vacuum environment, adjusting the pressure in the vacuum environment to 4x10 (-7) Pa, introducing nitrogen into the vacuum environment, and separating the bonded two wafer bodies after 2 hours;
s3, decomposing the residual oxide film on the surface of the wafer and desorbing hydrogen adsorbed on the surface until the oxide film on the surface of the wafer and the adsorbed hydrogen are completely removed, and then taking the wafer out of the vacuum environment;
s4, stacking the two wafer bodies together, adding a small amount of distilled water between the two wafer bodies, then placing the wafer bodies into a closed environment, adding a small amount of carbon tetrafluoride into the closed environment, treating the surface of the wafer by using fluorine-containing plasma, then taking out the two wafer bodies, laminating the two wafer bodies, and standing at room temperature;
s5, in the process of placing the wafer body at room temperature, the volume of the silicon oxyfluoride layer after absorbing water expands, so that the atomic scale contact area between the wafers is increased, and more Si-O-Si covalent bonds are formed.
Wherein the concentration of the hydrofluoric acid solution in the step 1 is 10%, the working rotating speed of the polishing equipment in the step 1 is 2000r/min, the polishing time of the wafer body is 2min, the volume of the carbon tetrafluoride added in the step 4 is equal to the volume in the closed environment, and the time for placing the two wafer bodies at room temperature in the step 4 is 24 hours.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (5)
1. A wafer bonding method is characterized in that: the method comprises the following steps:
s1, preparing two wafer bodies, firstly immersing the two wafer bodies into a hydrofluoric acid solution to remove a natural oxidation layer on the surfaces of the wafer bodies, then taking out the wafer bodies to carry out drying treatment on the wafer bodies, and then polishing the front surfaces and the back surfaces of the two wafer bodies by using polishing equipment to keep the smoothness of the surfaces of the two wafer bodies;
s2, pre-bonding two wafer bodies at room temperature, transferring the bonded wafer into a vacuum environment, extracting gas in the vacuum environment, adjusting the pressure in the vacuum environment to be within a range of 2x10 (-7) -4x10 (-7) Pa, introducing nitrogen into the vacuum environment, and separating the bonded two wafer bodies after 1-2 hours;
s3, decomposing the residual oxide film on the surface of the wafer and desorbing hydrogen adsorbed on the surface until the oxide film on the surface of the wafer and the adsorbed hydrogen are completely removed, and then taking the wafer out of the vacuum environment;
s4, stacking the two wafer bodies together, adding a small amount of distilled water between the two wafer bodies, then placing the wafer bodies into a closed environment, adding a small amount of carbon tetrafluoride into the closed environment, treating the surface of the wafer by using fluorine-containing plasma, then taking out the two wafer bodies, laminating the two wafer bodies, and standing at room temperature;
s5, in the process of placing the wafer body at room temperature, the volume of the silicon oxyfluoride layer after absorbing water expands, so that the atomic scale contact area between the wafers is increased, and more Si-O-Si covalent bonds are formed.
2. The wafer bonding method of claim 1, wherein: the concentration of the hydrofluoric acid solution in the step 1 is 2-10%.
3. The wafer bonding method of claim 1, wherein: the rotation speed of the polishing device in the step 1 is 1000-2000r/min, and the polishing time of the wafer body is 1-2 min.
4. The wafer bonding method of claim 1, wherein: and the volume of the carbon tetrafluoride added in the step 4 is 2-5% of the volume in the closed environment.
5. The wafer bonding method of claim 1, wherein: and the two wafer bodies in the step 4 are placed at room temperature for 20-24 hours.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911028550.3A CN110767541A (en) | 2019-10-28 | 2019-10-28 | Wafer bonding method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911028550.3A CN110767541A (en) | 2019-10-28 | 2019-10-28 | Wafer bonding method |
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| CN201911028550.3A Pending CN110767541A (en) | 2019-10-28 | 2019-10-28 | Wafer bonding method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111785614A (en) * | 2020-06-18 | 2020-10-16 | 上海空间电源研究所 | Bonding structure capable of reducing voltage loss and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1241803A (en) * | 1998-05-15 | 2000-01-19 | 佳能株式会社 | Process for manufacturing semiconductor substrate as well as semiconductor thin film and multilayer structure |
| US20040152282A1 (en) * | 2000-02-16 | 2004-08-05 | Ziptronix, Inc. | Method for low temperature bonding and bonded structure |
| TW200525585A (en) * | 2003-10-13 | 2005-08-01 | Mattson Tech Inc | System and method for removal of photoresist in transistor fabrication for integrated circuit manufacturing |
| CN1860590A (en) * | 2003-05-19 | 2006-11-08 | 齐普特洛尼克斯公司 | Method of room temperature covalent bonding |
| CN101494177A (en) * | 2008-01-23 | 2009-07-29 | 胜高股份有限公司 | Method for producing bonded wafer |
| CN105632902A (en) * | 2015-12-30 | 2016-06-01 | 哈尔滨工业大学 | High and low temperature controllable wafer bonding method through semiconductor refrigeration sheet |
| CN105745739A (en) * | 2013-11-18 | 2016-07-06 | 富士胶片株式会社 | Semiconductor substrate treatment liquid, treatment method, and manufacturing method of semiconductor substrate product using these |
| TW201743367A (en) * | 2016-06-14 | 2017-12-16 | Shin Etsu Handotai Co Ltd | Bonded wafer manufacturing method |
-
2019
- 2019-10-28 CN CN201911028550.3A patent/CN110767541A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1241803A (en) * | 1998-05-15 | 2000-01-19 | 佳能株式会社 | Process for manufacturing semiconductor substrate as well as semiconductor thin film and multilayer structure |
| US20040152282A1 (en) * | 2000-02-16 | 2004-08-05 | Ziptronix, Inc. | Method for low temperature bonding and bonded structure |
| CN1860590A (en) * | 2003-05-19 | 2006-11-08 | 齐普特洛尼克斯公司 | Method of room temperature covalent bonding |
| TW200525585A (en) * | 2003-10-13 | 2005-08-01 | Mattson Tech Inc | System and method for removal of photoresist in transistor fabrication for integrated circuit manufacturing |
| CN101494177A (en) * | 2008-01-23 | 2009-07-29 | 胜高股份有限公司 | Method for producing bonded wafer |
| CN105745739A (en) * | 2013-11-18 | 2016-07-06 | 富士胶片株式会社 | Semiconductor substrate treatment liquid, treatment method, and manufacturing method of semiconductor substrate product using these |
| CN105632902A (en) * | 2015-12-30 | 2016-06-01 | 哈尔滨工业大学 | High and low temperature controllable wafer bonding method through semiconductor refrigeration sheet |
| TW201743367A (en) * | 2016-06-14 | 2017-12-16 | Shin Etsu Handotai Co Ltd | Bonded wafer manufacturing method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111785614A (en) * | 2020-06-18 | 2020-10-16 | 上海空间电源研究所 | Bonding structure capable of reducing voltage loss and preparation method thereof |
| CN111785614B (en) * | 2020-06-18 | 2022-04-12 | 上海空间电源研究所 | Bonding structure capable of reducing voltage loss and preparation method thereof |
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