CN110672211A - Nano-gold modified non-refrigeration infrared detector and manufacturing method thereof - Google Patents
Nano-gold modified non-refrigeration infrared detector and manufacturing method thereof Download PDFInfo
- Publication number
- CN110672211A CN110672211A CN201910856628.4A CN201910856628A CN110672211A CN 110672211 A CN110672211 A CN 110672211A CN 201910856628 A CN201910856628 A CN 201910856628A CN 110672211 A CN110672211 A CN 110672211A
- Authority
- CN
- China
- Prior art keywords
- electrode
- nickel
- manganese
- film
- cobalt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010931 gold Substances 0.000 title claims abstract description 33
- 229910052737 gold Inorganic materials 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000005057 refrigeration Methods 0.000 title claims abstract description 4
- YQOXCVSNNFQMLM-UHFFFAOYSA-N [Mn].[Ni]=O.[Co] Chemical compound [Mn].[Ni]=O.[Co] YQOXCVSNNFQMLM-UHFFFAOYSA-N 0.000 claims abstract description 44
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910001120 nichrome Inorganic materials 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 18
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000002356 single layer Substances 0.000 claims abstract description 11
- 239000002245 particle Substances 0.000 claims abstract description 9
- 239000010408 film Substances 0.000 claims description 68
- 239000010410 layer Substances 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 20
- 230000004048 modification Effects 0.000 claims description 16
- 238000012986 modification Methods 0.000 claims description 16
- 238000001659 ion-beam spectroscopy Methods 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 238000004806 packaging method and process Methods 0.000 claims description 4
- 238000000233 ultraviolet lithography Methods 0.000 claims description 4
- 238000003466 welding Methods 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 238000012546 transfer Methods 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 238000000992 sputter etching Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 13
- 238000010521 absorption reaction Methods 0.000 abstract description 9
- 238000001514 detection method Methods 0.000 abstract description 9
- 230000004044 response Effects 0.000 abstract description 9
- KFDQGLPGKXUTMZ-UHFFFAOYSA-N [Mn].[Co].[Ni] Chemical compound [Mn].[Co].[Ni] KFDQGLPGKXUTMZ-UHFFFAOYSA-N 0.000 abstract description 2
- 229910018487 Ni—Cr Inorganic materials 0.000 abstract 1
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000000151 deposition Methods 0.000 description 6
- 229910018553 Ni—O Inorganic materials 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000002791 soaking Methods 0.000 description 4
- 229910001935 vanadium oxide Inorganic materials 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920006335 epoxy glue Polymers 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- -1 oxygen ion Chemical class 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011896 sensitive detection Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention discloses a nano-gold modified non-refrigeration infrared detector and a manufacturing method thereof. A nickel-chromium film bottom electrode, a nano-gold modified manganese-cobalt-nickel-oxygen film and a single-layer graphene film top electrode are sequentially prepared on a silicon nitride microbridge substrate, so that the uncooled infrared detection with multiband response is realized. The response wave bands of the infrared detector are 0.3-2 μm, 3-5 μm and 8-14 μm. Wherein the 0.3-2 μm response comes from the absorption of manganese cobalt nickel material, the 3-5 μm response comes from the 3-5 μm anti-reflection resonant cavity and the absorption of nano gold particles, and the 8-14 μm wave band absorption comes from NiCr lower electrode. The top and bottom electrode structure can reduce the resistance of the manganese cobalt nickel oxygen detector by 3 orders of magnitude compared with the traditional device, reduce the noise of the device by 1-2 orders of magnitude compared with the traditional planar device, and is easy to integrate.
Description
Technical Field
The invention relates to a method for manufacturing an infrared detector, in particular to a method for manufacturing a multiband uncooled infrared detector with a manganese-cobalt-nickel-oxygen top-bottom electrode structure modified by nano gold.
Background
Manganese-cobalt-nickel oxide (Mn-Co-Ni-O: MCNO) with spinel structure is a transition metal oxide heat-sensitive material with excellent negative temperature coefficient of resistance (NTC) and has been widely applied in the aspects of infrared detection, temperature sensing and the like, wherein one of important applications is the development of uncooled heat-sensitive infrared detectors [1 ]]. The uncooled thermosensitive infrared detector is an important type of infrared detector, and has the advantages of uncooled performance, wide response band, high reliability and stability, low manufacturing cost, etc. [2 ]]. Materials commonly used for preparing uncooled thermal infrared detectors include vanadium oxide (VOx), amorphous silicon (a-Si), Manganese Cobalt Nickel Oxide (MCNO), etc. [3-4 ]]. In comparison, the absolute value of the negative resistance temperature coefficient at room temperature of the VOx film is 2-3%. K-1While the Mn-Co-Ni-O film can reach 4%. K-1. In addition, the Mn-Co-Ni-O film has excellent low-frequency current noise performance, and the low-frequency current noise quality factor is about 10-21cm3The order of magnitude is superior to that of the common amorphous silicon or vanadium oxide material, and the higher room temperature detectivity is hopefully obtained [5 ]]. MCNO material is applied to key technologies such as satellite attitude control in China for over half a century, and is successfully applied to satellite-borne equipment such as earth energy balance detection and horizon sensor for a long time [6 ]]。
However, the manganese cobalt nickel oxide material still has three disadvantages compared with the traditional thermosensitive detection material: 1. the crystallization temperature of the material is high (700-1100 ℃); 2. the room temperature resistivity of the material is high (250 omega cm), the square resistance of a 1 mu m thick film is 2.5 megaohms, and the matching with a rear-end preamplifier is poor; 3. the absorption coefficient is small (k is less than 0.1) in the range of 2-14 mu m of the infrared band. Therefore, people prepare the manganese-cobalt-nickel sheet device as a bulk material by a high-temperature sintering method, increase absorption by using black paint, solve the problems of signal amplification matching and weak infrared absorption of the device and realize a unit broadband detection device; or a gem substrate with better matching with the manganese cobalt nickel oxide is used, and a photoresist sacrificial layer method is utilized to manufacture a small-scale line manganese cobalt nickel oxide thick film (10 mu m) detection device. However, as an important uncooled thermal sensitive detection material, the future development direction of the manganese-cobalt-nickel-oxygen thin film is to be a focal plane array and broadband infrared detection, and therefore, a brand new manganese-cobalt-nickel-oxygen detector with a top-bottom electrode structure is provided. NiCr metal is used as a lower electrode to improve long-wave infrared (8-14 mu m) absorption; depositing a manganese-cobalt-nickel-oxygen film with the thickness of hundreds of nanometers on a silicon nitride microbridge at low temperature (300 ℃), and improving the short-wave infrared absorption after the surface is modified by nano gold particles; in addition, the top and bottom electrode structures are arranged, so that the resistance value of the device is greatly reduced, and the problem of electronic matching is solved. The patent designs a multi-band infrared detector with a manganese-cobalt-nickel-oxygen material top-bottom electrode structure, and the response wave bands of the detector are 0.3-2 microns, 3-5 microns and 8-14 microns. Wherein two infrared atmospheric windows of 3-5 μm and 8-14 μm can be covered. The design of the top and bottom electrode structure can reduce the resistance of the manganese cobalt nickel oxide device by 3 orders of magnitude, and the noise is reduced by 1-2 orders of magnitude compared with a planar device.
The references referred to above are as follows:
[1]Chen,L.；Zhang,Q.；Yao,J.；Wang,J.；Kong,W.W.；Jiang,C.,Formation ofMn-Co-Ni-O Nanoceramic Microspheres Using In Situ Ink-Jet Printing:SinteringProcess Effect on the Microstructure and Electrical Properties.Small 2016,12,5027.
[2]Zhang,F；Zhou,W；OuYang,C；Wu,J；Gao,Y；Huang,Z,Annealing effect on thestructural and electrical performance of Mn-Co-Ni-O films.AIP Advances 5(11),117137.
[3]Evan,M.S.；Panjwani,D.；Ginn,J.；Warren,A.P.；Long,C.；Figuieredo,P.；Smith,C.；Nath,J.；Perlstein J.；Walter,N.；Hirschmug,C.；Robert,E.Peale；andDavid,Shelton,Dual band sensitivity enhancements of a VOXmicrobolometerarrayusing a patterned gold black absorber,Applied Optics 2016,8,55.
[4]Evan,M.S.；Panjwani,D.；Ginn,J.；Warren,A.P.；Long,C.；Figuieredo,P.；Smith,C.；Nath,J.；Perlstein J.；Walter,N.；Hirschmug,C.；Robert,E.Peale；andDavid,Shelton,Dual band sensitivity enhancements of a VOXmicrobolometerarray using a patterned gold black absorber,Applied Optics 2016,8,55.
[5]Ouyang,C.；Zhou,W.；Wu,J.；Hou,Y.；Gao,Y.Q.,et al.Uncooled bolometerbased on Mn1.56Co0.96Ni0.48O4 thin films for infrared detection and thermalimaging,Appl.Phys.Lett.2014,105,022105.
[6]Hou,Y.；Huang,Z.M.；Gao,Y.Q.；Ge,Y.J.；Wu,J.；and Chu,J.H.,Characterization of Mn1.56Co0.96Ni0.48O4films for infrared detection,Appl.Phys.Lett.2008,92,202115.
disclosure of Invention
The invention aims to provide a manganese-cobalt-nickel-oxygen top-bottom electrode structure detector with multiband response and good impedance matching property, and provides a manufacturing method. The problems that the time constant of the traditional manganese-cobalt-nickel-oxygen device infrared device is large, array integration is difficult and the like are solved, and the application requirement of a broadband response uncooled infrared detector can be met.
The structure of the manganese-cobalt-nickel-oxygen top-bottom electrode structure broadband infrared line detector is described as follows: fig. 1 is a side view of the structure of the infrared detector of the present invention. Fig. 2 is a top view of the infrared detector of the present invention.
As shown in fig. 1, the infrared detector structure includes: a NiCr film bottom electrode 2, a manganese cobalt nickel oxide film heat-sensitive layer 3, a nanogold modification layer 4 and a single-layer graphene layer top electrode 5 are sequentially arranged on a silicon nitride micro-bridge substrate 1, and a Ti/Au expanded electrode 6 is prepared on the edge of the bottom electrode 2. The NiCr film bottom electrode 2 is a rectangle with two parts which are bilaterally symmetrical, the thickness of the electrode is 30nm, the length of the electrode is 30-100 microns, the width of the electrode is 15-50 microns, and the distance between the two parts of the rectangle electrodes is 5-10 microns. The size of the graphene top electrode 5 is 4-8 microns smaller than that of the manganese-cobalt-nickel-oxygen thin film heat-sensitive layer 3 below the graphene top electrode. The thickness of the manganese cobalt nickel oxygen film heat-sensitive layer 3 is 320-400nm, and the thickness of the nano gold modified layer is 10-20 nm.
The manganese-cobalt-nickel-oxygen top-bottom electrode structure broadband infrared line detector is prepared by the following steps:
(1) and preparing a NiCr film bottom electrode 2. A symmetrical rectangular NiCr film bottom electrode 2 with the distance of 5-10 microns is prepared on a silicon nitride microbridge substrate 1 by adopting a double-ion-beam sputtering method, the thickness is 30nm, the length is 30-100 microns, the width is 15-50 microns, and the distance between two parts of rectangular electrodes is 5-10 microns.
(2) Preparing a manganese cobalt nickel oxide film thermosensitive layer 3 and a nano gold particle modification layer 4. And (3) using photoresist as a sacrificial layer, and preparing a detection element pattern with the size of 30-100 micrometers square above the symmetrical NiCr film bottom electrode 2 through ultraviolet lithography. Depositing a manganese-cobalt-nickel-oxygen film heat-sensitive layer 3 by a magnetron sputtering method; and preparing a gold film with the thickness of 2nm on the manganese-cobalt-nickel-oxygen thin film heat-sensitive layer 3 by adopting a magnetron sputtering method. Removing the Mn-Co-Ni-O film and the Au at the position of the non-sensitive element by stripping with acetone and alcohol, and annealing at the low temperature of 300 ℃ to change the nano-Au film into a nano-Au particle modification layer 4;
(3) and preparing a top electrode of the device. Transferring the single-layer graphene film to the upper part of the table top of the manganese-cobalt-nickel-oxygen film by using a transfer method, and preparing a single-layer graphene top electrode 5 by ultraviolet lithography and oxygen ion etching;
(4) and preparing an expanded electrode. Preparing electrode areas to be plated on two sides of a NiCr film bottom electrode 2 by using an ultraviolet photoetching method, and preparing a Ti/Au expanding electrode 6 by double-ion beam sputtering;
(5) packaging and spot welding, manufacturing a reading circuit, and leading out an electric signal of the device.
This patent has following advantage:
1. the response wave band of the infrared detector is 0.3-2 μm, 3-5 μm and 8-14 μm, and two infrared atmospheric windows of 3-5 μm and 8-14 μm can be covered;
2. compared with the traditional manganese cobalt nickel oxide device, the material thickness and the device heat capacity are reduced by 95%, the time constant is reduced by 80%, and high absorption of a plurality of important visible-infrared window wave bands is ensured;
3. the top-bottom electrode structure can reduce the resistance of the manganese cobalt nickel oxide material by 3 orders of magnitude, the noise of a detector is reduced by 1-2 orders of magnitude compared with the noise of a traditional planar device with the same thickness, and the detector is easier to integrate compared with a manganese cobalt nickel oxide thick film device.
Description of the drawings:
fig. 1 is a side view of the structure of the infrared detector of the present invention.
Fig. 2 is a top view of the infrared detector.
FIG. 3 is a flow chart of a method for manufacturing an infrared detector according to the present invention.
Detailed Description
To make the objects, technical solutions and advantages of the present invention clearer, technical solutions of exemplary embodiments of the present invention are described below with reference to the accompanying drawings.
In accordance with the above structure, 3 embodiment detectors were fabricated:
example detector 1:
a NiCr film bottom electrode 2, a manganese-cobalt-nickel-oxygen film heat-sensitive layer 3, a nanogold modification layer 4 and a single-layer graphene layer top electrode 5 are sequentially arranged above a silicon nitride micro-bridge substrate 1, and Ti/Au expanded electrodes 6 are prepared on two sides of the device. A NiCr film bottom electrode 2 is manufactured on the surface of a silicon nitride microbridge substrate 1, and is a rectangle with two parts which are bilaterally symmetrical, the thickness of the rectangle is 20nm, the length of the rectangle is 30 microns, the width of the rectangle is 15 microns, and the distance between the rectangle electrodes of the two parts is 5 microns. The manganese cobalt nickel oxygen film heat-sensitive layer 3 made above the NiCr film bottom electrode 2 has the size of 30 micrometers in width and 35 micrometers in length; the dimensions of the graphene top electrode 5 were 26 microns wide by 31 microns long. The thickness of the manganese-cobalt-nickel-oxygen film heat-sensitive layer 3 is 320 nanometers, and the thickness of the nanogold modification layer 4 is 10 nanometers.
Example detector 2:
a NiCr film bottom electrode 2, a manganese-cobalt-nickel-oxygen film heat-sensitive layer 3, a nanogold modification layer 4 and a single-layer graphene layer top electrode 5 are sequentially arranged above a silicon nitride micro-bridge substrate 1, and Ti/Au expanded electrodes 6 are prepared on two sides of the device. A NiCr film bottom electrode 2 is manufactured on the surface of a silicon nitride microbridge substrate 1, and is a rectangle with two parts which are bilaterally symmetrical, the thickness of the rectangle is 30nm, the length of the rectangle is 50 microns, the width of the rectangle is 25 microns, and the distance between the rectangle electrodes of the two parts is 8 microns. The manganese cobalt nickel oxygen film heat-sensitive layer 3 manufactured above the NiCr film bottom electrode 2 has the size of 50 micrometers in width and 58 micrometers in length; wherein the dimensions of the graphene top electrode 5 are 44 microns wide by 52 microns long. The thickness of the manganese-cobalt-nickel-oxygen film heat-sensitive layer 3 is 360 nanometers, and the average thickness of the nano-gold modification layer 4 is 15 nanometers.
Example detector 3:
a NiCr film bottom electrode 2, a manganese-cobalt-nickel-oxygen film heat-sensitive layer 3, a nanogold modification layer 4 and a single-layer graphene layer top electrode 5 are sequentially arranged above a silicon nitride micro-bridge substrate 1, and Ti/Au expanded electrodes 6 are prepared on two sides of the device. A NiCr film bottom electrode 2 is manufactured on the surface of a silicon nitride microbridge substrate 1, and is a rectangle with two parts which are bilaterally symmetrical, the thickness of the rectangle is 30nm, the length of the rectangle is 100 microns, the width of the rectangle is 50 microns, and the distance between the rectangle electrodes of the two parts is 10 microns. The manganese cobalt nickel oxygen film heat-sensitive layer 3 made above the NiCr film bottom electrode 2 has the size of 100 micrometers in width and 110 micrometers in length; wherein the graphene top electrode 5 has dimensions of 92 microns wide and 102 microns long. The thickness of the manganese-cobalt-nickel-oxygen film heat-sensitive layer 3 is 400 nanometers, and the average thickness of the nano-gold modification layer 4 is 20 nanometers.
Fig. 3 is a flow chart of a method for manufacturing a mn-co-ni-o detector with a microbridge structure modified by nano-gold used in embodiments 1 to 3 of the present invention. As shown in fig. 3, the preparation method of the microbridge structure mn-co-ni-o detector modified by nanogold comprises several processes, such as NiCr thin film bottom electrode, deposition of mn-co-ni-o thin film thermal sensitive layer and nanogold film, preparation of nanogold particle modification layer by low temperature annealing, preparation of epitaxial electrode layer and device packaging, and the specific processes are described as follows:
1. and preparing a NiCr film bottom electrode on the silicon nitride microbridge substrate.
Spin-coating AZ1500 photoresist on a silicon nitride microbridge structure substrate, setting the rotating speed of a spin coater to be 4000 rpm, setting the spin coater time to be 30 seconds, carrying out ultraviolet exposure for 15 seconds, and developing for 20 seconds to obtain a bottom electrode pattern; the NiCr bottom electrode is plated by a double ion beam sputtering method, wherein the temperature during sputtering is room temperature, and the pressure during sputtering is 2 millipascal. Selecting a 45-degree off-target sputtering mode, wherein the ion energy is 500eV, the ion beam current is 70mA, the sputtering time is 200 seconds, sputtering a NiCr film for 30nm, soaking for 30min by using acetone to finish photoresist stripping and metal stripping, and cleaning a sample and then blowing by using nitrogen. The NiCr film bottom electrode 2 is a symmetrical rectangle with the interval of 5-10 microns, the film thickness is 30nm, the length of a single bottom electrode area is 30-100 microns, the width is 15-50 microns, and the interval between two parts of rectangle electrodes is 5-10 microns.
2. Preparing the manganese-cobalt-nickel-oxygen film thermosensitive layer and the nano-gold particle modification layer.
Using AZ4330 photoresist to spin-coat on a silicon nitride microbridge structure substrate, setting the rotating speed of a spin coater to be 4000 rpm, setting the spin coating time to be 30 seconds, carrying out ultraviolet exposure for 25 seconds, and developing for 30 seconds to obtain a heat-sensitive layer pattern, wherein the thickness of the photoresist is about 3 microns; the manganese-cobalt-nickel-oxygen thermal sensitive film layer with the thickness of 320-400nm is prepared by a magnetron sputtering method, and the sputtering deposition rate is 1.4 nm/min. And depositing a gold film with the thickness of 2nm on the surface of the manganese-cobalt-nickel-oxygen thermosensitive film layer by using a magnetron sputtering device with quartz crystal oscillator thickness gauge control. Soaking in acetone for 30min to remove glue and strip to remove Mn-Co-Ni-O film and gold at non-sensitive position, cleaning with alcohol and deionized water for 2-3 min, and blowing with nitrogen. And (3) annealing at low temperature of 300 ℃ by using a rapid annealing furnace, so that the surface of the nano gold film is subjected to polycondensation and then re-nucleated to form a nano gold particle modification layer in disordered distribution, wherein the particle size of nano particles in the modification layer is 10-30 nm.
3. And manufacturing a top electrode of the device.
One side of a 1 cm square single layer graphene film grown on a copper substrate was protected and transferred to a silicon nitride microbridge substrate using a conventional transfer method. And spin-coating AZ1500 photoresist on the silicon nitride microbridge structure substrate, setting the rotating speed of a spin coater to be 4000 rpm, setting the spin coater time to be 30 seconds, carrying out ultraviolet exposure for 15 seconds, and developing for 20 seconds to obtain a top electrode pattern. The graphene of the non-top electrode portion was etched away using an oxygen ion etch for 1 minute. And soaking the substrate in acetone for 30min to remove the photoresist at the position of the non-top electrode, and then cleaning the substrate with alcohol and deionized water for 2-3 min and then drying the substrate with nitrogen.
4. And manufacturing an expanded electrode.
Using AZ4330 photoresist to spin-coat on a silicon nitride microbridge structure substrate, setting the rotating speed of a spin coater to be 4000 rpm, setting the spin coater time to be 30 seconds, carrying out ultraviolet exposure for 25 seconds, and developing for 30 seconds to obtain a bottom electrode pattern; the Ti/Au bottom electrode is plated by a double-ion beam sputtering method, wherein the temperature during sputtering is room temperature, and the pressure during sputtering is 2 millipascal. Selecting a 45-degree off-target sputtering mode, wherein the ion energy is 500eV, the ion beam current is 70mA, sputtering and depositing a Ti film of 20nm and an Au film of 200nm, soaking the films in acetone for 30 minutes to remove photoresist and strip metal, cleaning the sample with alcohol and deionized water, and drying the sample with nitrogen.
5. Packaging and spot welding, manufacturing a device reading circuit and leading out an electric signal.
And adhering the device on a copper heat sink by using epoxy glue, realizing the power supply of the device and the spot welding connection of the signal section in a PCB mode, and reading out the signal of each detection element. The device is packaged on a header and the device electrodes are connected to the pins using a spot welder.
Claims (2)
1. A nanometer gold modified non-refrigeration infrared detector is characterized in that:
the structure of the infrared detector is as follows: a NiCr film bottom electrode (2), a manganese-cobalt-nickel-oxygen film heat-sensitive layer (3), a nanogold modification layer (4) and a single-layer graphene layer top electrode (5) are sequentially arranged on a silicon nitride microbridge substrate (1); preparing an expanded electrode (6) of Ti and Au at the edge of the NiCr film bottom electrode (2); the NiCr film bottom electrode (2) is a rectangle with two parts which are symmetrical left and right, the thickness of the electrode is 20-30nm, the length of the electrode is 30-100 microns, the width of the electrode is 15-50 microns, and the distance between the two parts of the rectangle electrodes is 5-10 microns; the thickness of the manganese cobalt nickel oxygen film heat-sensitive layer (3) is 320-400nm, and the manganese cobalt nickel oxygen film heat-sensitive layer covers the NiCr film bottom electrode and the middle slit; the size of the graphene top electrode (5) is 4-8 microns smaller than that of the manganese-cobalt-nickel-oxygen thin film heat-sensitive layer (3) below; the thickness of the nano gold modification layer (4) is 10-20 nm.
2. A method of making the nanogold-modified uncooled infrared detector of claim 1, comprising the steps of:
step 1: preparing a NiCr film bottom electrode (2) on a silicon nitride microbridge substrate, and preparing a symmetrical rectangular NiCr film bottom electrode on the silicon nitride microbridge substrate by adopting a dual-ion beam sputtering method;
step 2: preparing a manganese-cobalt-nickel-oxygen film thermosensitive layer (3) and a nano gold particle modification layer (4);
and step 3: preparing a top electrode of the device, transferring the single-layer graphene film to the upper part of the table top of the manganese-cobalt-nickel-oxygen film by using a transfer method, and preparing the single-layer graphene top electrode (5) by ultraviolet lithography and oxygen ion etching;
and 4, step 4: preparing an expanded electrode, preparing electrode areas to be plated on two sides of a NiCr film bottom electrode (2) by using an ultraviolet lithography method, and preparing a Ti/Au expanded electrode (6) by double ion beam sputtering;
and 5: packaging and spot welding, manufacturing a reading circuit, and leading out an electric signal of the device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910856628.4A CN110672211B (en) | 2019-09-11 | 2019-09-11 | Nano-gold modified non-refrigeration infrared detector and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910856628.4A CN110672211B (en) | 2019-09-11 | 2019-09-11 | Nano-gold modified non-refrigeration infrared detector and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110672211A true CN110672211A (en) | 2020-01-10 |
| CN110672211B CN110672211B (en) | 2020-11-20 |
Family
ID=69077868
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910856628.4A Active CN110672211B (en) | 2019-09-11 | 2019-09-11 | Nano-gold modified non-refrigeration infrared detector and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110672211B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111739973A (en) * | 2020-07-01 | 2020-10-02 | 中国科学院上海技术物理研究所 | Uncooled double-color infrared film type detector and preparation method thereof |
| CN114252932A (en) * | 2020-09-25 | 2022-03-29 | 上海新微技术研发中心有限公司 | Long-wave infrared sensor containing cobalt sensing material, and preparation method and application thereof |
| CN114323296A (en) * | 2020-09-25 | 2022-04-12 | 上海新微技术研发中心有限公司 | Long-wave infrared sensor containing nickel sensing material, and preparation method and application thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101357747A (en) * | 2008-09-17 | 2009-02-04 | 电子科技大学 | Preparation method of no-refrigeration infrared focal plane micro-bridge structure |
| CN102732848A (en) * | 2012-06-25 | 2012-10-17 | 中国科学院上海技术物理研究所 | Method for preparing single oriented manganese cobalt nickel oxygen film by magnetron sputtering |
| CN106044696A (en) * | 2016-07-11 | 2016-10-26 | 中国科学院上海技术物理研究所 | Infrared detector with micro-bridge structure made of manganese-cobalt-nickel-oxygen film and manufacturing method thereof |
| US9677946B1 (en) * | 2014-12-22 | 2017-06-13 | Magnolia Optical Technologies, Inc. | Infrared radiation detectors using carbon nanotubes-silicon vanadium oxide and or amorphous silicon nanoparticles-CNT nanocomposites and methods of constructing the same |
| CN109238475A (en) * | 2018-08-20 | 2019-01-18 | 中国科学院上海技术物理研究所 | There are the manganese cobalt nickel oxygen thermistor detector and method of bent support leg micro-bridge structure |
-
2019
- 2019-09-11 CN CN201910856628.4A patent/CN110672211B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101357747A (en) * | 2008-09-17 | 2009-02-04 | 电子科技大学 | Preparation method of no-refrigeration infrared focal plane micro-bridge structure |
| CN102732848A (en) * | 2012-06-25 | 2012-10-17 | 中国科学院上海技术物理研究所 | Method for preparing single oriented manganese cobalt nickel oxygen film by magnetron sputtering |
| US9677946B1 (en) * | 2014-12-22 | 2017-06-13 | Magnolia Optical Technologies, Inc. | Infrared radiation detectors using carbon nanotubes-silicon vanadium oxide and or amorphous silicon nanoparticles-CNT nanocomposites and methods of constructing the same |
| CN106044696A (en) * | 2016-07-11 | 2016-10-26 | 中国科学院上海技术物理研究所 | Infrared detector with micro-bridge structure made of manganese-cobalt-nickel-oxygen film and manufacturing method thereof |
| CN109238475A (en) * | 2018-08-20 | 2019-01-18 | 中国科学院上海技术物理研究所 | There are the manganese cobalt nickel oxygen thermistor detector and method of bent support leg micro-bridge structure |
Non-Patent Citations (2)
| Title |
|---|
| CAIYANG WU等: "Long wavelength infrared detection based on Mn-Co-Ni-O thin films with dielectric-metal-dielectric absorptive structures", 《INFRARED PHYSICS & TECHNOLOGY》 * |
| 周炜 等: "锰钴镍氧浸没式探测器制备及性能", 《红外与毫米波学报》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111739973A (en) * | 2020-07-01 | 2020-10-02 | 中国科学院上海技术物理研究所 | Uncooled double-color infrared film type detector and preparation method thereof |
| CN111739973B (en) * | 2020-07-01 | 2023-12-26 | 中国科学院上海技术物理研究所 | Uncooled bicolor infrared thin film type detector and preparation method thereof |
| CN114252932A (en) * | 2020-09-25 | 2022-03-29 | 上海新微技术研发中心有限公司 | Long-wave infrared sensor containing cobalt sensing material, and preparation method and application thereof |
| CN114323296A (en) * | 2020-09-25 | 2022-04-12 | 上海新微技术研发中心有限公司 | Long-wave infrared sensor containing nickel sensing material, and preparation method and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110672211B (en) | 2020-11-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110672211B (en) | Nano-gold modified non-refrigeration infrared detector and manufacturing method thereof | |
| US20140319357A1 (en) | Electromagnetic wave detector and electromagnetic wave detector array | |
| US20150168221A1 (en) | Black silicon-based high-performance mems thermopile ir detector and fabrication method | |
| JP2015045629A5 (en) | ||
| JP2016528498A (en) | Pyroelectric aluminum nitride MEMS infrared sensor with selective wavelength infrared absorber | |
| US8053730B2 (en) | Infrared sensor and method of fabricating the same | |
| CN104465850B (en) | Pyroelectric infrared detector based on Graphene absorbed layer and manufacture method thereof | |
| CN104501970A (en) | Three-dimensional temperature detector and manufacturing method thereof | |
| US20150200348A1 (en) | Photo detector | |
| CN110943138B (en) | Colloidal quantum dot infrared focal plane array based on interference enhancement structure and preparation method | |
| CN210926061U (en) | Thermopile infrared detector | |
| CN103852171B (en) | A kind of non-brake method Long Wave Infrared Probe absorbent layer structure | |
| CN110875402B (en) | Composite film sensitive material, infrared detector and preparation method | |
| CN106092333B (en) | Micro-bolometer based on carbon nano infrared absorption layer | |
| CN105258806A (en) | Pyroelectric infrared detection unit and manufacture method thereof, and pyroelectric infrared detector | |
| CN108107081B (en) | Method for manufacturing gas sensor and gas sensor manufactured thereby | |
| JP4277506B2 (en) | ZnO-based thin film for thermoelectric material of thermoelectric conversion element, thermoelectric conversion element using the ZnO-based thin film, and infrared sensor | |
| WO2016110135A1 (en) | Fold film temperature sensor and manufacturing method therefor | |
| CN110137299A (en) | A kind of enhanced Infrared Thin Films detector and preparation method based on silicon dielectric structure | |
| CN210071148U (en) | Etching-enhanced uncooled infrared film detector | |
| US10184839B1 (en) | Nanostructured vanadium oxide uncooled bolometers and method of fabrication | |
| CN209929328U (en) | Enhanced infrared film detector based on silicon medium structure | |
| CN104409554A (en) | Black carbon absorbing layer-based pyroelectric infrared detector and production method thereof | |
| CN203772418U (en) | Absorbing layer structure for non-refrigerating long-wave infrared detector | |
| Ho et al. | A high sensitivity lead-titanate (PbTiO 3) pyroelectric thin-film infrared sensor with temperature isolation improvement structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |