CN110624893B - Megasonic wave combined gas spray cleaning device and application thereof - Google Patents
Megasonic wave combined gas spray cleaning device and application thereof Download PDFInfo
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- CN110624893B CN110624893B CN201910908597.2A CN201910908597A CN110624893B CN 110624893 B CN110624893 B CN 110624893B CN 201910908597 A CN201910908597 A CN 201910908597A CN 110624893 B CN110624893 B CN 110624893B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention provides a megasonic combined gas spray cleaning device and application thereof, which adopts megasonic to clean polluted particles on the surface of a wafer and has the characteristics of high efficiency and extremely high removal efficiency of extremely small particles (nano level); the gas atomizing nozzle is simple to clean, the large-size particles are high in removal capacity, and the device can combine the advantages of the gas atomizing nozzle and the large-size particles. The device is applied to chip manufacturing, and can effectively remove small-size defects; meanwhile, the large-size pollution particles are removed by matching with the characteristic of strong removal capability of the gas atomization nozzle for cleaning, the phenomenon that the surface particles are unstable in the manufacturing process is solved, and the defect removal rate is improved to more than 90%. The device can be applied not only to the removal of surface particles of a groove or a grid electrode, but also to a flat surface in the wafer manufacturing process, and the removal effect of the surface particles is enhanced by adjusting the flow rate of gas in the gas atomization device or ultrasonic energy.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a megasonic combined gas spray cleaning device and application thereof.
Background
In the semiconductor manufacturing process, about 20% of procedures are related to silicon wafer cleaning, and the quality of cleaning efficiency directly affects the yield of wafer products. There are two major types of particle defects in the wafer processing process, as shown in fig. 1a, fig. 1a shows the contamination particles falling on the wafer surface during the previous layer processing in the prior art. The first type is particles falling on the surface of a wafer in the front layer treatment process, the particles are generally large, and are removed mainly by matching a gas atomization device with an APM solution at present, but the flow rate of gas atomization needs to be controlled so as to prevent damage to a lower layer of a pattern; as shown in fig. 1b, fig. 1b shows contaminant particles with a size less than 500nm in the semiconductor manufacturing process in the prior art, such particles have a size less than about 500nm, and due to the small size, such defects mainly exist in the trench or the dual gate, which is difficult to remove by the conventional gas atomization method. From long-term defect monitoring, the removal rate of particles on the surface cleaned by a wet method is about 80%, and the particles are unstable, so that the stability of yield is seriously influenced.
Therefore, it is necessary to provide a new method for improving the wet cleaning capability to increase the removal rate to 90%.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a megasonic combined gas spray cleaning apparatus and an application thereof, which are used to solve the problems in the prior art that the removal of large-sized contaminant particles is likely to cause damage to the pattern structure on the surface of a wafer and the removal rate of small-sized particles is low.
To achieve the above and other related objects, the present invention provides a megasonic combined gas spray cleaning apparatus, comprising: a megasonic generator and a gas spraying device with a nozzle which are controlled by a control system; the gas spraying device is positioned on the cleaning substrate, and a plurality of buttons for controlling the gas spraying device are also arranged on the cleaning substrate; the megasonic generator is positioned above the wafer to be cleaned.
Preferably, the frequency of the wave emitted by the megasonic generator is 1 to 2 MHz.
Preferably, the gas spraying device is loaded with functional water.
Preferably, the PH of the functional water carried in the gas spraying device is greater than 7.
Preferably, the plurality of buttons on the cleaning substrate comprise buttons for adjusting the gas flow.
Preferably, the control system controls the megasonic generator and the gas spraying device in a simultaneous mode.
Preferably, the control system controls the megasonic generator and the gas spraying device in separate modes.
The invention also provides the application of the megasonic combined gas spray cleaning device, wherein the megasonic generator is adopted to emit megasonic to remove the nano-scale pollution particles on the wafer to be cleaned; and removing the pollution particles with the size of more than submicron level on the wafer to be cleaned by adopting the gas sprayed by the nozzle on the gas spraying device.
The invention also provides the application of the megasonic combined gas spray cleaning device, wherein the megasonic generator is adopted to emit megasonic to remove pollution particles positioned in a structural pattern dense area on the wafer to be cleaned; and removing the pollution particles on the wafer to be cleaned in the flat area by using the gas sprayed by the nozzle on the gas spraying device.
Preferably, the megasonic generator emits megasonic waves in the form of pulses to remove nanometer-sized contaminant particles on the wafer to be cleaned.
Preferably, the megasonic generator emits pulsed megasonic waves to remove the contamination particles on the wafer to be cleaned, which are located in the dense region of the structural pattern.
Preferably, the distance between the wafer to be cleaned and the megasonic generator is adjusted to control the energy received by the surface of the wafer to be cleaned.
Preferably, the structure pattern dense region on the wafer to be cleaned is a trench region or a region in the gate.
Preferably, the megasonic generator is used for emitting megasonic waves to remove the pollution particles with the size less than 500 nanometers on the wafer to be cleaned.
Preferably, the gas spraying device is loaded with functional water, and the functional water is sprayed out through the nozzle after being atomized so as to remove pollution particles with the size of above submicron level on the wafer to be cleaned.
Preferably, the gas spraying device is loaded with functional water, and the functional water is sprayed out through the nozzle after being atomized so as to remove pollution particles on the wafer to be cleaned, wherein the pollution particles are located in a flat area.
Preferably, the functional water is water after hydrogen is introduced.
As described above, the megasonic combined gas spray cleaning device and the application thereof of the present invention have the following beneficial effects: the invention adopts megasonic to clean the pollution particles on the surface of the wafer, and has the characteristics of high efficiency and extremely high removal efficiency of extremely small particles (nano level); the gas atomizing nozzle cleaning method is simple, the removal capacity of large-size (more than submicron) particles is high, and the device can combine the advantages of the two. The device is applied to chip manufacturing, and can effectively remove small-size defects; meanwhile, the cleaning agent is matched with a gas atomization nozzle to have strong removal capability on large-size (more than submicron) particles, so that large-size pollution particles are removed, the phenomenon that surface particles are unstable in the manufacturing process is solved, and the defect removal rate is improved to more than 90%. The device can be applied to the removal of surface particles of a groove or a grid electrode, and can also be applied to a flat surface in the wafer manufacturing process, so that the removal effect of the surface particles is enhanced by adjusting the flow rate of gas in the gas atomization device or ultrasonic energy.
Drawings
FIG. 1a shows contaminant particles falling on the wafer surface during a prior art pre-layer process;
FIG. 1b shows contaminant particles having a size of less than 500nm in a prior art semiconductor manufacturing process;
FIG. 2 is a schematic diagram of a megasonic combined gas spray cleaning apparatus according to the present invention;
FIG. 3 is a schematic diagram of the present invention for removing small-sized contaminant particles using megasonic waves;
FIG. 4 is a schematic view showing the removal of large-sized contaminant particles by a gas spraying apparatus according to the present invention.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 2 to 4. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
The invention provides a megasonic combined gas spray cleaning device, as shown in fig. 2, fig. 2 is a schematic structural diagram of a megasonic combined gas spray cleaning device of the invention, the device at least comprises: a megasonic generator and a gas spraying device with a nozzle which are controlled by a control system; the gas spraying device is positioned on the cleaning substrate, and a plurality of buttons for controlling the gas spraying device are also arranged on the cleaning substrate; the megasonic generator is positioned above the wafer to be cleaned. That is, the megasonic generator is controlled by the control system along with the gas spray cleaning apparatus, the control system can control the frequency of the megasonic generator emission wavelength and can control the flow rate of the gas sprayed from the gas spray cleaning apparatus, and the gas spray cleaning apparatus has a nozzle from which the gas is sprayed. The cleaning substrate is provided with the gas spraying device, the cleaning substrate is also provided with a plurality of buttons for controlling the gas spraying device to work, when the megasonic generator works to clean the pollution particles on the wafer to be cleaned, the megasonic generator is positioned above the wafer to be cleaned and keeps a certain distance with the surface of the wafer to be cleaned, and the energy received by the wafer to be cleaned can be changed by adjusting the distance between the megasonic generator and the surface of the wafer to be cleaned.
Furthermore, the frequency of the wave emitted by the megasonic generator is 1-2 MHz. That is, when the megasonic combined gas spray cleaning apparatus of the present invention is used to clean nano-scale pollution particles (pollution particles with a size less than 500 nm) on the surface of a wafer, or when the gas spray cleaning apparatus of the present invention is used to clean pollution particles on a wafer located in a structure pattern dense region, the wavelength frequency emitted by the megasonic generator is 1 to 2 MHz. The pattern-structure pattern dense region of the invention comprises a trench region or a region in a gate.
In a further aspect of the present invention, the gas spraying apparatus is loaded with functional water. The functional water is introduced with hydrogen, and the functional water is atomized by the gas spraying device and then sprayed out through the nozzle to clean the pollution particles on the surface of the wafer to be cleaned, wherein the pollution particles are above the submicron level, or the pollution particles on the flat area to be cleaned. Furthermore, the PH value of the functional water loaded in the gas spraying device is more than 7, and the pollution particles are taken away by utilizing the principle that the functional water and the charges of the particles on the surface of the wafer repel each other under the high PH condition.
The invention further provides a plurality of buttons on the cleaning substrate, which comprise buttons for adjusting the gas flow. The control system controls the megasonic generator and the gas spraying device simultaneously or respectively and independently.
The invention also provides the application of the megasonic combined gas spray cleaning device, wherein the megasonic generator is adopted to emit megasonic to remove the nano-scale pollution particles on the wafer to be cleaned; and removing the pollution particles with the size of more than submicron level on the wafer to be cleaned by adopting the gas sprayed by the nozzle on the gas spraying device. That is, the megasonic generator is adopted to emit megasonic waves, and the frequency of the emitted megasonic waves is 1-2 MHz. Megasonic waves at frequencies in this range readily remove contaminant particles of the invention on wafers to be cleaned that are on the order of nanometers in size, particularly contaminant particles less than 500 nanometers in size. When the megasonic generator is used for emitting waves with the frequency of 1-2 MHz, the megasonic generator preferably emits megasonic in a pulse form to remove the nano-scale pollution particles on the wafer to be cleaned. The wafer surface particles are peeled off during the megasonic turn-on period to be removed, and in the case of removing the small-sized nano-scale contamination particles, the removal rate of the small-sized nano-scale contamination particles increases with the increase in frequency in the range of 1 to 2 MHz.
The invention further provides a method for controlling the energy received by the surface of the wafer to be cleaned by adjusting the distance between the wafer to be cleaned and the megasonic generator. That is to say, when the wafer surface is cleaned by using the megasonic generator of the present invention, the megasonic generator is located above the wafer to be cleaned and keeps a certain distance from the surface of the wafer to be cleaned, and by adjusting the distance between the megasonic generator and the wafer to be cleaned, the megasonic energy received by the surface of the wafer to be cleaned is different, so the cleaning rate is also different.
The invention adopts the nozzle on the gas spraying device to spray gas to remove the pollution particles with the size above submicron level on the wafer to be cleaned. That is to say, the gas spraying device is loaded with functional water, namely water which is sprayed with hydrogen, the functional water has a high PH value, and the particles are taken away by the principle of repulsion with surface particle charges under the high PH condition.
The invention also provides the application of the megasonic combined gas spray cleaning device, which is characterized in that the megasonic generator is adopted to emit megasonic to remove pollution particles positioned in a structural pattern dense area on a wafer to be cleaned; furthermore, the structure pattern dense area on the wafer to be cleaned is a groove area or an area in the grid electrode. The megasonic generator emits megasonic in a pulse form to remove the pollution particles positioned in the structural pattern dense area on the wafer to be cleaned. And the megasonic generator is adopted to emit megasonic to remove the pollution particles with the size less than 500 nanometers on the wafer to be cleaned. And removing the pollution particles on the wafer to be cleaned in the flat area by using the gas sprayed by the nozzle on the gas spraying device. As shown in fig. 3 and 4, fig. 3 is a schematic diagram illustrating the removal of small-sized contaminant particles by megasonic waves according to the present invention; FIG. 4 is a schematic view showing the removal of large-sized contaminant particles by a gas spraying apparatus according to the present invention. The gas spraying device is loaded with functional water, and the functional water is sprayed out through the nozzle after being atomized so as to remove pollution particles with the size of more than submicron level on the wafer to be cleaned. The functional water is water after hydrogen is introduced. In fig. 3, the nano-scale contaminant particles 01 are located between pwell and nwell, and are removed by megasonic waves emitted from a megasonic generator; in fig. 4, contamination particles 02 of submicron or more are located between pwell and nwell and are removed by a gas spraying device.
The invention relates to a wet cleaning machine platform; the method utilizes the characteristics that megasonic waves have high removal efficiency on particles with extremely small sizes (nano-scale) and gas atomizing nozzles have strong removal capability on particles with large sizes (more than submicron), can effectively improve the removal rate of the particles on the surface of the wafer to be more than 90 percent, and can not cause pattern damage so as to effectively reduce defects and improve the yield. The cleaning method can be applied to a flat layer in the process of a wafer process, and the effect of removing surface particles is enhanced by adjusting a gas atomization device or ultrasonic energy; the cleaning method can also be applied to removing the particles on the surface of the groove or the grid, the particles in the groove or the grid of the wafer can be peeled off from the substrate through the specific megasonic mode of the device, and the particles are taken away by matching the gas atomization device with the cleaning liquid without causing pattern damage.
In summary, in the process of removing the surface particles on the wafer, the specific megasonic mode of the device is utilized, so that the surface particles can be peeled off from the wafer pattern region during the period of alternately starting the megasonic, and the particles are taken away during the period of closing the megasonic by utilizing the principle that the surface particles repel charges under the condition of high PH of functional water; while larger sized particles are removed using a gas atomization system. The device can remove two types of particles which are typical in wafer production and manufacturing, solves the problem of unstable particles in the wafer manufacturing process, and improves the removal rate of surface particles to more than 90 percent. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (16)
1. A megasonic combined gas spray cleaning apparatus, comprising at least:
a megasonic generator and a gas spraying device with a nozzle which are controlled by a control system; the gas spraying device is positioned on the cleaning substrate, and a plurality of buttons for controlling the gas spraying device are also arranged on the cleaning substrate; the megasonic generator is positioned above the wafer to be cleaned; the megasonic generator is adopted to emit megasonic waves to remove pollution particles positioned in a structural pattern dense area on the wafer to be cleaned; and removing the pollution particles on the wafer to be cleaned in the flat area by using the gas sprayed by the nozzle on the gas spraying device.
2. The megasonic combined gas spray cleaning apparatus of claim 1 wherein: the frequency of the wave emitted by the megasonic generator is 1-2 MHz.
3. The megasonic combined gas spray cleaning apparatus of claim 1 further comprising: the gas spraying device is loaded with functional water.
4. A megasonic combined gas spray cleaning device as claimed in claim 3, wherein: the PH value of the functional water carried in the gas spraying device is more than 7.
5. The megasonic combined gas spray cleaning apparatus of claim 1 further comprising: the plurality of buttons on the cleaning substrate comprise buttons for adjusting the gas flow.
6. The megasonic combined gas spray cleaning apparatus of claim 1 further comprising: the control system controls the megasonic generator and the gas spraying device in a mode of being controlled simultaneously.
7. The megasonic combined gas spray cleaning apparatus of claim 1 further comprising: the control system controls the megasonic generator and the gas spraying device respectively and independently.
8. Use of a megasonic combined gas spray cleaning device as claimed in any one of claims 1 to 7, characterized in that: the megasonic generator is adopted to emit megasonic waves to remove the pollution particles with the nanometer size on the wafer to be cleaned; the nozzle of the gas spraying device is adopted to spray gas to remove the pollution particles with the size of more than submicron level on the wafer to be cleaned.
9. Use of a megasonic combined gas spray cleaning device as claimed in claim 8, characterized in that: the megasonic generator emits megasonic in a pulse form to remove nano-sized pollution particles on the wafer to be cleaned.
10. Use of a megasonic combined gas spray cleaning device as claimed in claim 1, characterized in that: the megasonic generator emits megasonic in a pulse form to remove the pollution particles positioned in the structural pattern dense area on the wafer to be cleaned.
11. Use of a megasonic combined gas spray cleaning device as claimed in claim 9 or 10, characterized in that: and controlling the energy received by the surface of the wafer to be cleaned by adjusting the distance between the wafer to be cleaned and the megasonic generator.
12. Use of a megasonic combined gas spray cleaning device as claimed in claim 10, characterized in that: the structure pattern dense area on the wafer to be cleaned is a groove area or an area in a grid electrode.
13. Use of a megasonic combined gas spray cleaning device as claimed in claim 8, wherein: and the megasonic generator is adopted to emit megasonic to remove the pollution particles with the size less than 500 nanometers on the wafer to be cleaned.
14. Use of a megasonic combined gas spray cleaning device as claimed in claim 8, characterized in that: the gas spraying device is loaded with functional water, and the functional water is sprayed out through the nozzle after being atomized so as to remove pollution particles with the size of more than submicron level on the wafer to be cleaned.
15. Use of a megasonic combined gas spray cleaning device as claimed in claim 1, characterized in that: the gas spraying device is loaded with functional water, and the atomized functional water is sprayed out through the nozzle to remove pollution particles on the wafer to be cleaned, wherein the pollution particles are located in a flat area.
16. Use of a megasonic combined gas spray cleaning device as claimed in claim 14 or 15, characterized in that: the functional water is water after hydrogen is introduced.
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