CN110620552A - Linear voltage-controlled oscillator based on capacitance compensation technology - Google Patents
Linear voltage-controlled oscillator based on capacitance compensation technology Download PDFInfo
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- CN110620552A CN110620552A CN201910813118.9A CN201910813118A CN110620552A CN 110620552 A CN110620552 A CN 110620552A CN 201910813118 A CN201910813118 A CN 201910813118A CN 110620552 A CN110620552 A CN 110620552A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B1/00—Details
- H03B1/02—Structural details of power oscillators, e.g. for heating
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
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Abstract
The invention relates to a linear voltage-controlled oscillator based on a capacitance compensation technology, which is processed by adopting a CMOS (complementary metal oxide semiconductor) process and comprises an oscillating circuit and an LC (inductance-capacitance) resonance network, wherein the LC resonance network comprises at least one coupling inductor and at least three varactor units which are connected in parallel and have different bias voltages; each coupling inductor comprises a coupling structure formed by stacking and coupling at least two inductors, the two inductors at the two ends of the coupling structure are respectively a main inductor and a secondary inductor, the main inductor is connected with the oscillating circuit and is set as a first offset end for providing bias voltage for the oscillating circuit, and the secondary inductor is connected with the varactor unit and is set as a tuning end for providing tuning voltage for the varactor unit; each varactor unit comprises a series structure formed by two varactors which are symmetrically connected in series, and a common connecting end of the two varactors in each varactor unit forms a second bias end for providing bias voltage for the varactor unit. The invention has the advantages of low phase noise, high linearity and high temperature stability.
Description
Technical Field
The invention relates to the field of integrated circuit design, in particular to a linear Voltage Controlled Oscillator (VCO) based on a capacitance compensation technology.
Background
The CMOS process has the advantages of high cut-off frequency, high efficiency, high linearity, low dielectric loss, low crosstalk, radiation resistance, high temperature resistance and the like, has the advantages of low cost, high integration level, mature and stable process and the like compared with compound semiconductors such as GaAs and the like, and is widely applied to the fields of wireless communication, satellites, radars, electronic warfare and the like. The linear VCO can be applied to a high-precision broadband radar system and is beneficial to improving the range resolution of the radar system.
In order to improve the tuning linearity of the voltage controlled oscillator based on the CMOS process, a technology of a switched capacitor array or capacitance compensation is generally adopted in circuit design. The voltage-controlled oscillator designed by adopting the capacitance compensation technology generally needs to adopt a coupling inductance structure and a plurality of pairs of varactor units to form a coupling LC resonance network, and the relatively simple structure is easy to realize higher tuning linearity and lower tuning gain. However, the quality factor of the resonant network formed by the multiple LC resonant structures is often limited by the quality factor of the coupling inductor, and the quality factor of the resonant network directly affects the phase noise of the vco.
Disclosure of Invention
The invention aims to provide a linear voltage-controlled oscillator based on a capacitance compensation technology and having higher tuning linearity and lower phase noise.
In order to achieve the purpose, the invention adopts the technical scheme that:
a linear voltage-controlled oscillator based on a capacitance compensation technology is processed by adopting a CMOS (complementary metal oxide semiconductor) process, and comprises an oscillation circuit and an LC (inductance-capacitance) resonance network connected with the oscillation circuit, wherein the LC resonance network comprises at least one coupling inductor and at least three varactor units which are connected in parallel and have different bias voltages; when the LC resonant network comprises a plurality of the coupling inductors, each coupling inductor is coupled in a stacked manner;
each coupling inductor comprises a coupling structure formed by stacking and coupling at least two inductors, the two inductors at the two ends of the coupling structure are respectively a main inductor and a secondary inductor, the main inductor is connected with the oscillating circuit, a first bias end used for providing bias voltage for the oscillating circuit is arranged on the main inductor, the secondary inductor is connected with the varactor unit, and a tuning end used for providing tuning voltage for the varactor unit is arranged on the secondary inductor; each inductor included in the coupling inductor is made of different metal layers in the CMOS process;
each varactor unit comprises a series structure formed by symmetrically connecting two varactors in series, and a common connecting end of the two varactors in each varactor unit forms a second bias end used for providing bias voltage for the varactor unit.
Preferably, the oscillation circuit includes a first core oscillation tube and a second core oscillation tube for generating a negative resistance and forming a cross-coupled structure, a gate of the first core oscillation tube is connected to a drain of the second core oscillation tube, a gate of the second core oscillation tube is connected to a drain of the first core oscillation tube, the drain of the first core oscillation tube and the drain of the second core oscillation tube are respectively connected to two ends of the main inductor, and a source of the first core oscillation tube is connected to a source of the second core oscillation tube.
Preferably, the linear voltage-controlled oscillator based on the capacitance compensation technology further comprises a variable current source for providing an adjustable bias current for the oscillation circuit.
Preferably, the variable current source includes a first transistor, a second transistor, and a bias resistor, one end of the bias resistor forms a third bias terminal for providing a bias voltage for the variable current source, a gate and a drain of the first transistor and a gate of the second transistor are both connected to the other end of the bias resistor, a source of the first transistor and a source of the second transistor are grounded, respectively, and a drain of the second transistor is connected to a source of the first core oscillator transistor and a source of the second core oscillator transistor.
Preferably, the linear voltage-controlled oscillator based on the capacitance compensation technology further comprises a buffer amplifier used for reducing load traction effect and used for isolation.
Preferably, the buffer amplifier includes a third transistor and a fourth transistor connected in common source, a drain of the third transistor and a drain of the fourth transistor are connected together to form a fourth bias terminal for providing a bias voltage for the buffer amplifier, a drain of the third transistor and a drain of the fourth transistor respectively form an output terminal of the linear voltage controlled oscillator based on the capacitance compensation technique through corresponding blocking capacitors, a gate of the third transistor is connected to a drain of a first core oscillator transistor, a gate of the fourth transistor is connected to a drain of a second core oscillator transistor, and a source of the third transistor and a source of the fourth transistor are both connected to a source of the first core oscillator transistor and a source of the second core oscillator transistor.
Preferably, the drain of the third transistor is connected to the drain of the fourth transistor through the second spiral inductor after passing through the first spiral inductor.
Preferably, the inductors included in the coupling inductor are all single-turn spiral inductors.
Preferably, in the CMOS process adopted by the linear voltage controlled oscillator based on the capacitance compensation technology, the substrate is made of high-resistance silicon.
Due to the application of the technical scheme, compared with the prior art, the invention has the following advantages: according to the linear voltage-controlled oscillator based on the capacitance compensation technology, the secondary inductor in the coupling inductor structure is designed by adopting the thick metal layer, so that the quality factor of the whole coupling resonance network can be improved, and the phase noise of the voltage-controlled oscillator is further reduced; by adopting a plurality of pairs of varactors and setting different bias voltages, the linearity of the voltage characteristic curve of the whole capacitor can be improved, and the tuning linearity of the whole voltage-controlled oscillator is further improved; by adopting the CMOS process, the temperature stability of the whole circuit can be improved. The linear voltage-controlled oscillator overcomes the limitations of the traditional voltage-controlled oscillator in the aspects of linearity, phase noise, temperature stability and the like, realizes the linear voltage-controlled oscillator with low phase noise, high linearity and high temperature stability, and has wide application prospect in the fields of high-precision broadband radar systems and the like.
Drawings
Fig. 1 is a schematic diagram of a topology of a linear voltage-controlled oscillator based on a capacitance compensation technique according to the present invention.
Fig. 2 is a schematic structural diagram of an LC resonant network with a high quality factor used in a linear voltage controlled oscillator based on a capacitance compensation technique according to the present invention.
Fig. 3 is a schematic layout diagram of a linear voltage-controlled oscillator based on a capacitance compensation technique according to the present invention.
Fig. 4 is a graph of the output signal spectrum test result of a linear voltage-controlled oscillator based on the capacitance compensation technique according to the present invention.
Fig. 5 is a diagram illustrating a phase noise test result of an output signal of a linear voltage controlled oscillator based on a capacitance compensation technique according to the present invention.
Fig. 6 is a test result graph of the frequency of the oscillating signal, the power of the output signal and the gain of measuring the linearity varying with the sweep voltage of the linear voltage-controlled oscillator based on the capacitance compensation technique in the linear tuning range according to the present invention.
Detailed Description
The invention will be further described with reference to examples of embodiments shown in the drawings to which the invention is attached.
The first embodiment is as follows: a linear voltage controlled oscillator based on capacitance compensation technique is shown in fig. 1. The linear voltage-controlled oscillator is processed by adopting a CMOS (complementary metal oxide semiconductor) process and comprises an oscillating circuit, an LC (inductance-capacitance) resonant network, a variable current source and a buffer amplifier. In fig. 1, the oscillation circuit is located in the middle portion of the drawing, the variable current source is located in the lower half portion of the drawing, the buffer amplifiers are located on the left and right sides of the drawing, and the LC resonant network is located in the upper half portion of the drawing.
The LC resonance network is connected with the oscillation circuit and comprises at least one coupling inductor and at least three varactor units. The varactor cells are connected in parallel and have different bias voltages. When the LC resonant network includes a plurality of coupling inductors, the coupling inductors are coupled in a stack.
Each coupling inductor comprises a coupling structure formed by stacking and coupling at least two inductors, the two inductors at the two ends of the coupling structure are respectively a main inductor and a secondary inductor, the main inductor is connected with the oscillating circuit, and the main inductor is provided with a first bias end used for providing bias voltage for the oscillating circuit; the secondary inductor is connected with the varactor unit, and a tuning end used for providing tuning voltage for the varactor unit is arranged on the secondary inductor.
Each varactor unit comprises a series structure formed by two varactors which are symmetrically connected in series, so that the varactor units can also be varactor pairs. The common connection terminals of the two varactors in each varactor cell form a second bias terminal for providing the varactor cell with its bias voltage.
As shown in fig. 1 and 2, in the present embodiment, the LC resonant network includes a coupling inductor and three varactor cells. The coupled inductor comprises two stacked coupled inductors respectively of main inductor L3/LfirstAnd a sub-inductance L4/Lsecond. Main inductor L3/LfirstThe first bias terminal provided thereon is connected to pad5 to provide a bias voltage for the oscillator circuit. Main inductor L3/LfirstAre connected to the oscillating circuit. Sub-inductance L4/LsecondThe upper set tuning terminal is connected to pad6 to provide a tuning voltage Vs to the varactor cell. Three varactor cells are connected in parallel, the first varactor cell comprising a series varactor Cvar1And a varactor Cvar6Varactor Cvar1And a varactor Cvar6A second bias terminal formed by the series-connected common connection terminals is connected with the pad9 to provide bias voltage for the second bias terminal; the second varactor cell includes a series varactor Cvar2And a varactor Cvar5Varactor Cvar2And a varactor Cvar5A second bias terminal formed by the series-connected common connection terminals is connected with the pad8 to provide bias voltage for the second bias terminal; the third varactor cell includes a series varactor Cvar3And a varactor Cvar4 ，Cvar3And a varactor Cvar4A second bias terminal connection pad7 formed by the common connection terminals in series provides a bias voltage thereto. The bias voltages of the three varactor units are different and are respectively V3, V2 and V1. Three varactor units are connected in parallel and then connected to a secondary inductor L4/LsecondAt both ends of the same. The three above pairs of varactors have the same dimensions. The bias voltages of different varactor pairs are different, and the bias voltages of different varactor pairs are setThe capacitance-voltage characteristic curves of different varactors are shifted, and the capacitance-voltage characteristic curves of different varactors are compensated with each other, so that the linearity of the whole capacitance-voltage characteristic curve in a tuning voltage range is improved, and the tuning linearity of the voltage-controlled oscillator can be improved.
The oscillating circuit comprises a first core oscillating tube M1 and a second core oscillating tube M2 which are used for generating negative resistance and form a cross-coupling structure. The grid electrode of the first core oscillation tube M1 is connected with the drain electrode of the second core oscillation tube M2, the grid electrode of the second core oscillation tube M2 is connected with the drain electrode of the first core oscillation tube M1, the drain electrode of the first core oscillation tube M1 and the drain electrode of the second core oscillation tube M2 are respectively connected with a main inductor L3/LfirstThe source of the first core oscillator tube M1 is connected to the source of the second core oscillator tube M2.
The variable current source is used for providing an adjustable bias current for the oscillating circuit. The variable current source includes a first transistor M3, a second transistor M4, and a bias resistor R. One end of the bias resistor R forms a third bias end for providing bias voltage for the variable current source and is connected with the pad3, the grid and the drain of the first transistor M3 and the grid of the second transistor M4 are both connected with the other end of the bias resistor R, the source of the first transistor M3 and the source of the second transistor M4 are respectively grounded, and the drain of the second transistor M4 is connected with the source of the first core oscillation tube M1 and the source of the second core oscillation tube M2.
The buffer amplifier for reducing load pull effect and serving as isolation comprises a third transistor M5 and a fourth transistor M6 which are connected in common source, and the third transistor M5 and the fourth transistor M6 can also be referred to as a common source transistor M5 and a common source transistor M6 respectively. The drain of the third transistor M5 and the drain of the fourth transistor M6 are connected together to form a fourth bias terminal for providing the bias voltage Vbia for the buffer amplifier and connected to the pad4, the drain of the third transistor M5 and the drain of the fourth transistor M6 form the output terminal of the linear voltage controlled oscillator based on the capacitance compensation technique through the corresponding blocking capacitors C1 and C2 and are connected to the pad1 and the pad2, respectively, the gate of the third transistor M5 is connected to the drain of the first core oscillation tube M1, the gate of the fourth transistor M6 is connected to the drain of the second core oscillation tube M2, and the source of the third transistor M5 and the source of the fourth transistor M6 are connected to the source of the first core oscillation tube M1, the source of the second core oscillation tube M2 and the drain of the second transistor M4.
In this embodiment, the drain of the third transistor M5 is connected to the drain of the fourth transistor M6 through the second spiral inductor L2 and the first spiral inductor L1, and then to the pad 4. The first spiral inductor L1 and the second spiral inductor L2 are both on-chip spiral inductors, and are used for suppressing the influence of parasitic inductance of the bonding wire on the buffer amplifier.
The linear voltage-controlled oscillator based on the capacitance compensation technology adopts the CMOS process, leads to the packaging bonding pad through the bonding alloy wire, and the substrate is made of high-resistance silicon. The inductors included in the coupling inductor are all single-turn spiral inductors, and each inductor is made of different metal layers in a CMOS (complementary metal oxide semiconductor) process. E.g. main inductor L3/LfirstIn the last, the secondary inductance L4/LsecondIn the next, the secondary inductance L4/LsecondThe inductor L3/L is formed by processing a relatively thick metal layer as a second layer in a CMOS processfirstThe high-quality LC resonant network is formed by processing a relatively thick metal layer on the top layer in a CMOS process so as to improve the quality factor of the whole LC resonant network.
As shown in fig. 3, the size of the whole chip layout of the linear voltage controlled oscillator manufactured by the CMOS process is 580 μm × 560 μm. In fig. 3, the left output port is connected to the output pad1 through the blocking capacitor C1, and the right output port is connected to the output pad2 through the blocking capacitor C2; the bias voltage of the variable current source is connected to a bias pad3, the drains of common source tubes M5 and M6 in the buffer amplifier are connected to a bias pad4 through spiral inductors L1 and L2, and the drains of core oscillator tubes M1 and M2 are connected to a main inductor L3538firstThe tuning voltage Vs connected to pad5, 3 pairs of varactor cells passes through the secondary inductance LsecondConnected to pad6, a first pair of varactors Cvar5、Cvar6Is applied through pad7, and the second pair of varactors Cvar3、Cvar4Is applied through pad8, and a third pair of varactors Cvar1、Cvar2Is passed through the pad pad9, one pad is respectively arranged at the upper side and the lower side of two output pads pad1 and pad2 of the chip, namely pad10, pad11, pad12 and pad13, which are ground pads for GSG probe test and are ground pads of the whole chip.
Fig. 4 shows a spectrum test result of the output signal of the linear voltage controlled oscillator based on the capacitance compensation technique according to the present invention. During testing, one output pad is connected with a 50 ohm load resistor, and the other output pad is connected to a frequency spectrograph through a GSG probe. The test result shows that the linear voltage-controlled oscillator based on the capacitance compensation technology can stably oscillate in a K wave band, the difference between an output fundamental frequency signal and a second harmonic wave is 31dBc, and the linear voltage-controlled oscillator shows better harmonic suppression characteristics. Due to the adoption of the advanced CMOS process, the voltage-controlled oscillator has better radio frequency characteristics, and can provide higher output power than a voltage-controlled oscillator designed based on the traditional silicon-based CMOS process.
Fig. 5 shows a test result of phase noise of an output signal of a linear voltage controlled oscillator based on a capacitance compensation technique according to the present invention. During testing, the voltage-controlled oscillator can work in the state of optimal phase noise by adjusting the bias current of the variable current source. The test result shows that the phase noise of the voltage-controlled oscillator provided by the invention is-101 dBc/Hz when the voltage-controlled oscillator is biased to 1MHz due to the adoption of the specially designed resonance network with the high quality factor. The phase noise at a 100KHz offset is-60 dBc/Hz. Compared with the traditional voltage-controlled oscillator based on the CMOS process, the voltage-controlled oscillator provided by the invention has more excellent phase noise characteristics.
FIG. 6 is a test result of the present invention based on the capacitance compensation technology for the linear voltage-controlled oscillator oscillating the frequency of the signal, the power of the output signal and the gain measuring the linearity varying with the tuning voltage within the linear tuning range, the oscillation frequency of the linear voltage-controlled oscillator may vary linearly with the tuning voltage when the tuning voltage is swept from 0.4V to 2V, the oscillation frequency of the voltage-controlled oscillator varies from 23.11GHz to 26GHz, the linear tuning range is 2.89GHz, the linear tuning bandwidth is 11.8%. within the linear tuning range, the output power of the voltage-controlled oscillator is between-3 dBm ~ -1 dBm.
The above embodiments are merely illustrative of the technical ideas and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and not to limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.
Claims (9)
1. The linear voltage-controlled oscillator based on the capacitance compensation technology is processed by adopting a CMOS (complementary metal oxide semiconductor) process, comprises an oscillation circuit and an LC (inductance-capacitance) resonance network connected with the oscillation circuit, and is characterized in that: the LC resonance network comprises at least one coupling inductor, at least three varactor units which are connected in parallel and have different bias voltages; when the LC resonant network comprises a plurality of the coupling inductors, each coupling inductor is coupled in a stacked manner;
each coupling inductor comprises a coupling structure formed by stacking and coupling at least two inductors, the two inductors at the two ends of the coupling structure are respectively a main inductor and a secondary inductor, the main inductor is connected with the oscillating circuit, a first bias end used for providing bias voltage for the oscillating circuit is arranged on the main inductor, the secondary inductor is connected with the varactor unit, and a tuning end used for providing tuning voltage for the varactor unit is arranged on the secondary inductor; each inductor included in the coupling inductor is made of different metal layers in the CMOS process;
each varactor unit comprises a series structure formed by symmetrically connecting two varactors in series, and a common connecting end of the two varactors in each varactor unit forms a second bias end used for providing bias voltage for the varactor unit.
2. A linear voltage controlled oscillator based on capacitance compensation technique according to claim 1, characterized in that: the oscillation circuit comprises a first core oscillation tube and a second core oscillation tube which are used for generating negative resistance and forming a cross-coupling structure, a grid electrode of the first core oscillation tube is connected with a drain electrode of the second core oscillation tube, a grid electrode of the second core oscillation tube is connected with a drain electrode of the first core oscillation tube, the drain electrode of the first core oscillation tube and the drain electrode of the second core oscillation tube are respectively connected with two ends of the main inductor, and a source electrode of the first core oscillation tube is connected with a source electrode of the second core oscillation tube in a common mode.
3. A linear voltage controlled oscillator based on capacitance compensation technique according to claim 2, characterized in that: the linear voltage-controlled oscillator based on the capacitance compensation technology further comprises a variable current source for providing adjustable bias current for the oscillating circuit.
4. A linear voltage controlled oscillator based on capacitance compensation technique according to claim 3 characterized by: the variable current source comprises a first transistor, a second transistor and a bias resistor, wherein one end of the bias resistor forms a third bias end used for providing bias voltage for the variable current source, a grid electrode and a drain electrode of the first transistor and a grid electrode of the second transistor are connected with the other end of the bias resistor, a source electrode of the first transistor and a source electrode of the second transistor are respectively grounded, and a drain electrode of the second transistor is connected with a source electrode of the first core oscillation tube and a source electrode of the second core oscillation tube.
5. A linear voltage controlled oscillator based on capacitance compensation technique according to claim 2, characterized in that: the linear voltage-controlled oscillator based on the capacitance compensation technology further comprises a buffer amplifier used for reducing load traction effect and used for isolation.
6. The linear voltage-controlled oscillator based on the capacitance compensation technology as claimed in claim 5, wherein: the buffer amplifier comprises a third transistor and a fourth transistor which are connected in common source, the drain electrode of the third transistor and the drain electrode of the fourth transistor are connected together to form a fourth bias end for providing bias voltage for the buffer amplifier, the drain electrode of the third transistor and the drain electrode of the fourth transistor form the output end of the linear voltage-controlled oscillator based on the capacitance compensation technology after passing through corresponding blocking capacitors respectively, the gate electrode of the third transistor is connected with the drain electrode of a first core oscillation tube, the gate electrode of the fourth transistor is connected with the drain electrode of a second core oscillation tube, and the source electrode of the third transistor and the source electrode of the fourth transistor are connected with the source electrode of the first core oscillation tube and the source electrode of the second core oscillation tube.
7. The linear voltage-controlled oscillator based on the capacitance compensation technology as claimed in claim 6, wherein: the drain electrode of the third transistor is connected together after passing through the first spiral inductor and the drain electrode of the fourth transistor is connected together after passing through the second spiral inductor.
8. A linear voltage controlled oscillator based on capacitance compensation technique according to claim 1, characterized in that: the inductors included in the coupling inductor are all single-turn spiral inductors.
9. A linear voltage controlled oscillator based on capacitance compensation technique according to claim 1, characterized in that: in the CMOS process adopted by the linear voltage-controlled oscillator based on the capacitance compensation technology, a substrate is made of high-resistance silicon.
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| CN111277280A (en) * | 2020-01-17 | 2020-06-12 | 长沙瑞感电子科技有限公司 | Phased array transmitting chip based on millimeter wave voltage-controlled oscillator |
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| CN111277280A (en) * | 2020-01-17 | 2020-06-12 | 长沙瑞感电子科技有限公司 | Phased array transmitting chip based on millimeter wave voltage-controlled oscillator |
| CN111277280B (en) * | 2020-01-17 | 2021-06-04 | 长沙瑞感电子科技有限公司 | Phased array transmitting chip based on millimeter wave voltage-controlled oscillator |
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