CN110460231B - Charge pump resisting single-particle transient - Google Patents

Charge pump resisting single-particle transient Download PDF

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Publication number
CN110460231B
CN110460231B CN201910869549.7A CN201910869549A CN110460231B CN 110460231 B CN110460231 B CN 110460231B CN 201910869549 A CN201910869549 A CN 201910869549A CN 110460231 B CN110460231 B CN 110460231B
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module
state
charging
current
discharging
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CN110460231A (en
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韦援丰
李天文
陈柱佳
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Ehiway Microelectronic Technology Suzhou Co ltd
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Ehiway Microelectronic Technology Suzhou Co ltd
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type
    • H02M3/077—Charge pumps of the Schenkel-type with parallel connected charge pump stages

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
  • Electronic Switches (AREA)

Abstract

A charge pump resisting single-particle transient comprises a charging module (1), a discharging module (2), a control module (3), a first shunt module (4) and a second shunt module (5); the charging module (1) is used for providing charging current; the discharge module (2) is used for providing discharge current; the control module (3) is used for switching on the first shunt module (4) and the second shunt module (5) when the charging module (1) is in a charging state and has a single-event transient effect or the discharging module (2) is in a discharging state and has a single-event transient effect, and switching off the first shunt module (4) and the second shunt module (5) if the discharging module (2) is not in the charging state and has the single-event transient effect; the first shunting module (4) is used for shunting the charging current in a switching-on state so that the shunted charging current is in a first preset range; the second shunt module (5) is used for shunting the discharge current in a switch-on state, so that the shunted discharge current is in a second preset range.

Description

Charge pump resisting single-particle transient
Technical Field
The disclosure relates to the technical field of circuits, in particular to a charge pump resisting single-event transient.
Background
In a radiation environment, after high-energy particles bombard a sensitive node of a circuit, electron-hole pairs ionized by collision are transmitted and collected, so that output voltage or current fluctuates, the circuit generates error output, and a Single-Event Transient (SET) effect is generated. Integrated circuits are susceptible to SET resulting in various failures.
The Charge-Pump (CP) is mainly used for circuits such as phase-locked loops and memories, and is the most sensitive module to SET in the phase-locked loop, and the SET effect in the Charge Pump causes the maximum error pulse output by the phase-locked loop to be higher than other modules by an order of magnitude. The current switch output of the charge pump is the most sensitive node, because the current source switch in the charge pump is in the off state after the phase-locked loop is locked, the charge pump switch can inject a positive or negative transient pulse current into the filter due to SET, so that a transient voltage drop is formed on the filter resistor and deposited in the capacitor, the voltage at the output end of the filter is changed, peak pulses appear, and the phase-locked loop is unlocked.
Currently, the charge pump is mainly reinforced by a voltage type charge pump technology and a detection compensation technology to resist the SET effect. The voltage-type charge pump technology replaces the traditional current-type charge pump with the voltage-type charge pump, but the charge pump current depends on the filter voltage, so the locking process is unstable, and the output quality of the phase-locked loop is influenced by the voltage jump when the phase-locked loop is started. The detection compensation technology weakens the influence of the SET current in the charge pump in a detection compensation mode, a larger current detection threshold value is usually SET to distinguish the normal charge pump current from the SET current, the reinforcement effect is greatly influenced, and the reinforcement effect is also influenced by the time used in the starting process of the operational amplifier in the detection compensation when the SET current appears.
Disclosure of Invention
Technical problem to be solved
The present disclosure provides a charge pump resistant to single event transients, solving the above technical problems.
(II) technical scheme
The disclosure provides a charge pump resisting single-particle transient, which comprises a charging module, a discharging module, a control module, a first shunting module and a second shunting module; the charging module is used for providing charging current; the discharge module is used for providing discharge current; the control module is used for switching on the first shunt module and the second shunt module when the charging module is in a charging state and has a single-event transient effect or the discharging module is in a discharging state and has a single-event transient effect, or switching off the first shunt module and the second shunt module; the first shunting module is used for shunting the charging current in a switching-on state so that the shunted charging current is in a first preset range; the second shunt module is used for shunting the discharge current in a switch-on state, so that the shunted discharge current is in a second preset range.
Optionally, the method further comprises: and the adjusting module is used for adjusting the circuit parameters of the first shunt module and the second shunt module so as to enable the shunted charging current or discharging current to be within the first preset range or the second preset range.
Optionally, the charge pump comprises three detection resistors Ru、Rd、Rs，RuFor detecting said charging current, RdFor detecting said discharge current, RsFor detecting the charge current or discharge current after the current division。
Optionally, the second shunt module is composed of the resistor RdMOS field effect transistor MN1Switch S2And comparator CMP2Composition of, the resistance RdMOS field effect transistor MN1Switch S2And ground are connected in sequence, the resistor RdThe other end is connected to the resistor RuThe comparator CMP2Are respectively connected to the resistors RuAt both ends of the comparator CMP2Is connected to the switch S2The on-off control terminal.
Optionally, the first shunting module is formed by the resistor RuMOS field effect transistor MP1Switch S1Inverter and comparator CMP1Composition of, the resistance RuMOS field effect transistor MP1Switch S1And the power supply is connected in sequence, the resistor RuThe other end is connected to the resistor RdThe comparator CMP1Are respectively connected to the resistors RdAt both ends of the comparator CMP1Is connected to an input of the inverter, an output of the inverter is connected to the switch S1The on-off control terminal.
Optionally, the adjusting module is composed of a resistor RsAnd operational amplifiers OPA, the input ends of which are respectively connected to the resistors RsThe output terminal of the operational amplifier OPA is connected to the first or second shunt module to shunt the current through the resistor RsAdjusts the circuit parameter.
Optionally, the output resistance of the charging module or the discharging module and the resistance Ru、Rd、RsThe difference between them is greater than a preset value.
Optionally, the comparator is a single-event transient-resistant reinforced comparator and comprises a comparison unit, a field effect tube unit and a latch unit, wherein the comparison unit is used for controlling the field effect tube unit to be in a high-resistance state when being bombarded by a single event, and the latch unit is used for keeping the output unchanged when the field effect tube unit is in the high-resistance state.
Optionally, the charging module has an output end up for outputting a first state of the charging module, where the first state is a charging state and a charging state, and there is one of a single-event transient effect and a charging disconnection state; the discharging module is provided with an output end dn and used for outputting a second state of the discharging module, wherein the second state is a discharging state or a discharging state and has one of a single-event transient effect or a discharging disconnection state.
Optionally, the control module is composed of a NOR gate NOR1, inputs of the NOR gate NOR1 are connected to the output up and the output dn, respectively, and an output of the NOR gate NOR1 is connected to the first shunting module and the second shunting module.
(III) advantageous effects
The charge pump resisting the single-particle transient state has the following beneficial effects:
(1) when the current caused by the single-event transient state is detected, the SET current flows to a power supply or the ground by switching on the low-resistance shunt branch, so that the single-event transient state current is prevented from flowing out and depositing in a subsequent filter;
(2) by disconnecting the shunt branch when the charging and discharging are normal and the single-event transient effect does not exist, the misoperation of the shunt branch is avoided, the detection threshold value of the SET current is not influenced by the charging and discharging current, and the design freedom degree is high;
(3) by separating the circuit for controlling the on-off of the shunt branch circuit from the circuit for controlling the resistance value of the shunt branch circuit, the operational amplifier can be in an amplifying state all the time without undergoing state conversion, so that the response speed is improved, and the suppression capability on single-particle transient is improved;
(4) the charge pump disclosed by the invention only needs to slightly improve the unreinforced charge pump, does not need to adjust the parameters of the original charge pump, and can reduce the manufacturing cost.
Drawings
Fig. 1 schematically illustrates a structural diagram of a charge pump resistant to a single event transient according to an embodiment of the present disclosure;
fig. 2 schematically illustrates a structural diagram of a comparator in a charge pump resisting a single event transient according to an embodiment of the present disclosure.
Description of reference numerals:
1-a charging module; 2-a discharge module; 3-a control module; 4-a first splitting module; 5-a second split module; 6-a regulating module; 7-a comparison unit; 8-field effect transistor unit; 9-latch unit.
Detailed Description
For the purpose of promoting a better understanding of the objects, aspects and advantages of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings.
An embodiment of the present disclosure shows a charge pump for resisting a single-event transient, and the charge pump for resisting a single-event transient (hereinafter, referred to as a charge pump) is described in detail with reference to fig. 1.
The charge pump is composed of a charging module 1, a discharging module 2, a control module 3, a first shunting module 4 and a second shunting module 5.
The charging module 1 is used for providing a charging current. The charging circuit comprises a switch for switching on or off the charging module 1, and an output end up for outputting a first state of the charging module 1, wherein the first state is a charging state or a charging state and has one of a single-event transient effect and a charging off state. The charging state is a normal working state.
The discharge module 2 is used to provide a discharge current. The discharge module comprises a switch for switching on or off the electric module 2, and an output end dn for outputting a second state of the discharge module 2, wherein the second state is a discharge state or a discharge state and has one of a single event transient effect and a discharge disconnection state. The discharge state is a normal operating state. In addition, the switches of at most one of the discharging module 2 and the charging module 1 can be in the on state, i.e., the charge pump can only be in the charging state or the discharging state or the non-operating state.
The control module 3 is configured to switch on the first shunting module 4 and the second shunting module 5 when the charging module 1 is in a charging state and a single-event transient effect exists, or switch off the first shunting module 4 and the second shunting module 5 when the discharging module 2 is in a discharging state and a single-event transient effect exists.
The control module 3 is composed of a NOR gate NOR1, the NOR gate NOR1 being a two-input NOR gate, two inputs of the NOR1 being connected to the output up of the charging module 1 and the output dn of the discharging module 2, respectively, an output of the NOR1 being connected to the first and second shunting modules 4 and 5, in particular to a comparator CMP in the second shunting module 52And a comparator CMP in the first splitter module 41The enable control terminal.
In the embodiment of the disclosure, the charge pump includes three detection resistors Ru、Rd、Rs，RuFor detecting charging current, RdFor detecting discharge current, RsThe current detection circuit is used for detecting the charge current or the discharge current after the current division.
The second shunt module 5 is configured to shunt the discharge current in the on state, so that the shunted discharge current is within a second preset range. The second preset range is a normal range of the discharge current, and is determined according to specific situations, and no other limitation is made here. The second shunt module 5 is composed of a resistor RdMOS field effect transistor MN1Switch S2And comparator CMP2Composition, resistance RdMOS field effect transistor MN1Switch S2And ground are connected in sequence, a resistor RdThe other end is connected to a resistor RuComparator CMP2Are respectively connected to the resistors RuComparator CMP2Is connected to the switch S2The on-off control terminal. MN1Is an N-type MOS field effect transistor with drain connected to dt and source connected to switch S2。
Further, comparator CMP2Is connected to the charging current output terminal ut of the charging module 1, the output terminal ut and the resistor RuOne terminal connected, comparator CMP2Is connected to the resistor RuThe other end, when CMP2Enable control terminal active and resistance RuWhen a charging current flows in, the comparator CMP2Outputting a high level to close switch S2Resistance RdMOS field effect transistor MN1Switch S2And ground constitutes a shunt branch for the discharge current.
The first shunting module 4 is configured to shunt the charging current in the on state, so that the shunted charging current is within a first preset range. The first preset range is a normal range of the charging current, and is determined according to specific situations, and no other limitation is made here. The first shunting module 4 is formed by a resistor RuMOS field effect transistor MP1Switch S1Inverter and comparator CMP1Composition, resistance RuMOS field effect transistor MP1Switch S1And the power supply is connected in sequence, the resistor RuThe other end is connected to a resistor RdComparator CMP1Are respectively connected to the resistors RdComparator CMP1Is connected to the input of the inverter, the output of which is connected to the switch S1The on-off control terminal. MP1Is a P-type MOS field effect transistor with drain connected to ut and source connected to switch S1。
Further, comparator CMP1Is connected to the discharge current output terminal dt of the discharge module 2, the output terminal dt and the resistor RdOne terminal connected, comparator CMP1Is connected to a resistor RdThe other end, when CMP1Enable control terminal active and resistance RdWhen a charging current flows in, the comparator CMP1Outputs high level and is inverted by inverter to close switch S1Resistance RuMOS field effect transistor MP1Switch S1And the power supply forms a shunt branch of the charging current.
The charge pump further comprises an adjusting module 6 for adjusting circuit parameters of the first shunting module 4 and the second shunting module 5, so that the shunted charging current or discharging current is within a first preset range or a second preset range.
Further, the adjusting module 6 is composed of a resistor RsAnd an operational amplifier OPA, the input terminals of which are respectively connected to the resistors RsThe output of the operational amplifier OPA is connected to the first and second shunting modules 4 and 5, respectively, for passing through a resistor RsCurrent regulating circuit parameters. Specifically, the output terminal of the OPA is connected to the MOS FET MN1、MP1According to the flow of RsThe output voltage of the MOS field effect transistor M is adjusted by adjusting the magnitude of the charging current or the discharging currentN1、MP1The compensation intensity can be dynamically controlled.
In the embodiment of the present disclosure, the output resistor and the resistor R of the charging module 1 or the discharging module 2u、Rd、RsThe difference between them is greater than a preset value. The predetermined value is such that the resistor R is detectedu、Rd、RsThe output resistance of the charging module 1 is far smaller than that of the discharging module 2, so that a low-resistance shunt branch is provided when a single-particle transient effect exists, and the influence on the charging and discharging current is negligible when no single-particle transient effect exists.
It should be noted that the comparator CMP in the second shunt branch 52And a comparator CMP in the first shunt branch 41The reinforced comparator for resisting single-particle transient consists of a comparison unit 7, a field effect tube unit 8 and a latch unit 9, wherein the comparison unit 7 is used for controlling the field effect tube unit 8 to be in a high-resistance state when being bombarded by single particles, and the latch unit 9 is used for latching an output state when the field effect tube unit 8 is in the high-resistance state, so that the output is kept unchanged.
Specifically, referring to fig. 2, the comparing unit 7 is composed of two identical comparators CMP _1 and CMP _2, the fet unit 8 is composed of two P-type MOS transistors MP0 and MP1 and two N-type MOS transistors MN0 and MN1, and the latch unit 9 is composed of two inverters inv1 and inv 2.
The positive input ends of the comparators CMP _1 and CMP _2 are connected with the input port In +, the negative input ends are connected with the input port In-, the output end of the comparator CMP _1 is connected with the gates of the MP0 and the MN1, the output end of the comparator CMP _2 is connected with the gates of the MP1 and the MN0, the source of the MP0 is connected with a power supply, the drain of the MP0 is connected with the source of the MP1, the drain of the MP1 is connected with the drain of the MN1, the source of the MN1 is connected with the drain of the MN0, and the source of the MN0The drains of MP1 and MN1 are also connected to the input of inverter inv1, the output of inverter inv1 is connected to the input of inv2, and the output of inv2 is connected back to the input of inv 1. In + is comparator CMP2Or CMP1Is the comparator CMP2Or CMP1The negative input terminal of (1), the output terminal OUT of inv1 is the comparator CMP2Or CMP1To the output terminal of (a).
The reinforcement comparator for resisting single event transient receives single event bombardment, when one of the two comparators CMP _1 and CMP _2 has output state temporary inversion due to SET effect, the comparator with output state inversion only drives the states of the two MOS tubes to change, for example, the MP0 and MN1 can be driven to change by the output state inversion of CMP _1, the MP1 and MN0 can be driven to change by the output state inversion of CMP _2, so that a circuit formed by the four MOS tubes is high-resistance output, and a latch unit 9 formed by connecting the inv and the inv2 end to end can keep the original state, therefore, even if one comparator is subjected to single event bombardment output logic change, the output end of the reinforcement comparator for resisting single event transient still maintains the original state.
In summary, when the charging module 1 is in the charging state and is bombarded by a single particle, the discharging module 2 does not work, the NOR1 outputs a high level, and CMP1And CMP2Enable is effective due to RuIn a charging current, therefore CMP2Outputting high level to close S2，Rd、MN1、S2And forming a shunt branch circuit to shunt the charging current under single particle bombardment, and detecting the current flowing through R by OPAsCurrent magnitude of to regulate MN1So that the finally output charging current is within a preset range. When the discharging module 2 is in a discharging state and is bombarded by single particles, the charging module 1 does not work, the NOR1 outputs high level, and CMP1And CMP2Enable is effective due to RdIn the presence of discharge current, therefore, CMP1Outputting high level to close S1，Ru、MP1、S1And the power supply forms a shunt branch circuit to carry out discharge current under single particle bombardmentIs shunted and OPA is measured by measuring the flow through RsCurrent magnitude of to regulate MP1So that the finally output discharge current is within a preset range. Under other conditions, namely the charging module 1 is in a normal charging state (including the discharging module 2 is bombarded by single particles and is not bombarded by the single particles), or the discharging module 2 (including the charging module 1 is bombarded by the single particles and is not bombarded by the single particles) is in a normal discharging state, or the charging module 1 and the discharging module 2 do not work, at the moment, the NOR1 outputs a low level, and CMP (chemical mechanical polishing) outputs a low level1And CMP2The enable is disabled and the first and second splitter modules 4 and 5 are in a disconnected state, thereby preventing the wrong compensation from being caused.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (8)

1. A charge pump resisting single-particle transient comprises a charging module (1), a discharging module (2), a control module (3), a first shunt module (4) and a second shunt module (5);
the charging module (1) is used for providing a charging current;
the discharge module (2) is used for providing a discharge current;
the control module (3) is used for switching on the first shunt module (4) and the second shunt module (5) when the charging module (1) is in a charging state and has a single-event transient effect or the discharging module (2) is in a discharging state and has a single-event transient effect, and switching off the first shunt module (4) and the second shunt module (5) if the discharging module is not in the charging state and has the single-event transient effect;
the first shunting module (4) is used for shunting the charging current in a switching-on state so that the shunted charging current is in a first preset range;
the second shunt module (5) is used for shunting the discharge current in a switch-on state so that the shunted discharge current is in a second preset range;
wherein the first shunting module (4) is composed of a resistor RuMOS field effect transistor MP1Switch S1Inverter and comparator CMP1Composition of, the resistance RuMOS field effect transistor MP1Switch S1And the power supply is connected in sequence, the resistor RuThe other end is connected to a resistor RdThe comparator CMP1Are respectively connected to the resistors RdAt both ends of the comparator CMP1Is connected to an input of the inverter, an output of the inverter is connected to the switch S1The on-off control terminal of (1);
the second shunt module (5) is composed of a resistor RdMOS field effect transistor MN1Switch S2And comparator CMP2Composition of, the resistance RdMOS field effect transistor MN1Switch S2And ground are connected in sequence, the resistor RdThe other end is connected to a resistor RuThe comparator CMP2Are respectively connected to the resistors RuAt both ends of the comparator CMP2Is connected to the switch S2The on-off control terminal.
2. The charge pump of claim 1, further comprising:
and the adjusting module (6) is used for adjusting circuit parameters of the first shunt module (4) and the second shunt module (5) so that the shunted charging current or discharging current is within the first preset range or the second preset range.
3. The charge pump of claim 2 wherein the charge pump includes three sense resistors R thereinu、Rd、Rs，RuFor detecting said charging current, RdFor detecting said discharge current, RsAnd the current detection circuit is used for detecting the charge current or the discharge current after the current division.
4. Charge pump according to claim 3, wherein the regulation module (6) is formed by a resistor RsAnd operational amplifiers OPA, the input ends of which are respectively connected to the resistors RsThe output of the operational amplifier OPA is connected to the first and second shunting modules (4, 5) to shunt the current through the resistor RsAdjusts the circuit parameter.
5. Charge pump according to claim 3, wherein the output resistance of the charging module (1) or the discharging module (2) is the same as the resistance Ru、Rd、RsThe difference between them is greater than a preset value.
6. The charge pump according to claim 1, wherein the comparator is a single-event-transient-resistant reinforced comparator and comprises a comparison unit (7), a field effect transistor unit (8) and a latch unit (9), the comparison unit (7) is used for controlling the field effect transistor unit (8) to be in a high-resistance state when being bombarded by a single event, and the latch unit (9) is used for keeping the output unchanged when the field effect transistor unit (8) is in the high-resistance state.
7. The charge pump of claim 1, wherein:
the charging module (1) is provided with an output end up for outputting a first state of the charging module (1), wherein the first state is a charging state or a charging state and has one of a single-event transient effect and a charging disconnection state;
the discharging module (2) is provided with an output end dn and used for outputting a second state of the discharging module (2), wherein the second state is a discharging state or a discharging state and has one of a single-event transient effect and a discharging disconnection state.
8. The charge pump according to claim 7, wherein the control module (3) is constituted by a NOR gate NOR1, the inputs of the NOR gate NOR1 being connected to the output up and the output dn, respectively, and the output of the NOR gate NOR1 being connected to the first and second shunting module (4, 5).
CN201910869549.7A 2019-09-16 2019-09-16 Charge pump resisting single-particle transient Active CN110460231B (en)

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US8427796B2 (en) * 2010-01-19 2013-04-23 Qualcomm, Incorporated High voltage, high frequency ESD protection circuit for RF ICs
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CN102291128B (en) * 2011-06-28 2013-04-03 电子科技大学 Charge pump and low-pass filter component with anti-single particle radiation circuit
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